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Full text of "RCA Power Devices Data Book 1978"

Power 



SSD-220B 



RCA 

Power Devices 



This DATABOOK contains com- 
plete technical information on the 
full line of RCA solid-state power 
devices: power transistors, rf power 
transistors, power hybrid circuits, 
triacs, SCR's, diacs, silicon rectifiers, 
and rectifier assemblies. A complete 
index of these types is included on 
the following pages. 

The index to devices is followed 
by a series of product selection 
charts that provide a quick re- 
ference to key parameters and de- 
vice packages to facilitate type se- 
lection. A cross-reference guide then 
indicates recommended RCA re- 
placements for more than 2000 
popular industry types. Next, gener- 
al operating considerations for solid- 
state power devices are discussed, 
and symbols and special terms used 
to characterize these devices are 
listed. 

The DATABOOK also contains 
eight data sections that provide de- 
tailed ratings and characteristics for 
each of the various types of devices. 
Data pages for individual devices are 
given as nearly as possible in alpha- 
numerical sequence of the basic 
family type numbers. Because many 
devices may be included in the same 
basic family, individual type num- 
bers are not necessarily in sequence. 
If you don't find a type number 
where you expect it to be, check 
the Index to Devices. 

General information such as test 
circuits and waveforms, dimensional 
outlines, suggested mounting ar- 
rangements, and lead forms for 
plastic packages are included in an 
Appendix at the back of the book. 
The Appendix also includes ab- 
stracts of relevant RCA application 
notes. The final pages contain listings 
of RCA sales offices, manufacturers' 
representatives, and authorized dis- 
tributors. 



Table of Contents Page 

Index to Devices . 3 

Power-Transistor Selection Charts 8 

Audio Transistors 17 

Power Hybrid Comparison Chart 18 

RF Power Transistors Selection Charts 19 

Triac Product Matrix 20 

SCR Product Matrix 23 

ITR Product Matrix 24 

GTO Product Matrix 25 

Diac Product Matrix 25 

Rectifier Product Matrix 25 

Power-Devices Cross-Reference Guide 26 

Operating Considerations 46 

Terms and Symbols 50 

Power Transistors — Technical Data 53 

RF Power Transistors — Technical Data 417 

Power Hybrid Circuits - Technical Data 45 1 

Triacs — Technical Data 457 

Silicon Controlled Rectifiers — Technical Data 513 

Gate-Turn-off SCR's (GTO's) - Technical Data 569 

Diacs — Technical Data 572 

Rectifiers — Technical Data 575 

RCA High-Reliability Solid-State Power Devices 579 

Appendix: 

General Characteristics, Test Circuits, and Waveforms . . . 586 

Dimensional Outlines 595 

Suggested Hardware and Mounting Arrangements .... 603 

Lead Forms for RCA Plastic Power Packages 606 

Handling and Mounting of RCA Molded-Plastic 

Transistors and Thyristors 609 

Application-Note Abstracts 613 

RCA Sales Offices, Manufacturers' Representatives, and 

Authorized Distributors 617 



Solid 
State 



Brussels • Buenos Aires • Hamburg • Madrid ' Mexico City • Milan 
Montreal • Paris • Sao Paulo • Somerville N J • Stockholm 
Sunbury-pn-Thames • Taipei ' Tehran • Tokyo 



Information, furnished by RCA is believed to be accurate and reliable. 
However, no responsibility is assumed by RCA for its use; nor for any 
infringements of patents or other rights of third parties which may result 
from its use. No license is granted by implication or otherwise under any 
patent or patent rights of RCA. 



Copyright 1978 by RCA Corporation 
(All rights reserved under Pan-American 
Copyright Convention) 



Trademark(s) ^ Registered 
Marca(s) Registrada(s) 



Printed in USA/7-78 



Index to Dev 







Type of Bulletin 






Type of Bulletin 






Type of Bulletin 


Type No. 


Page 


Device 


File No. 


Type No. 


Page 


Device 


File No. 


Type No. 


Page 


Device 


File No. 


1 N248C 


576 


R 


6 


2N1479* 


60 


PT 


135 


2N3651 


564 


SCR 


408 


1N249C 


576 


R 


6 


2N1480* 


60 


PT 


135 


2N3652 


564 


SCR 


408 


1N250C 


576 


R 


6 


2N1481* 


60 


PT 


135 


2N3653 


564 


SCR 


408 


1N1183A 


576 


R 


38 


2N1482* 


60 


PT 


135 


2N3654 


564 


SCR 


724 


1N1184A 


576 


R 


38 


2N1483* 


65 


PT 


137 


2N3655 


564 


SCR 


724 


1N1186A 


576 


R 


38 


2N1484* 


65 


PT 


137 


2N3656 


564 


SCR 


724 


1N1187A 


576 


R 


38 


2N1485* 


65 


PT 


137 


2N3657 


564 


SCR 


724 


1N1188A 


576 


R 


38 


2N1486* 


65 


PT 


137 


2N3658 


564 


SCR 


724 


1N1189A 


576 


R 


38 


2N1487* 


67 


PT 


139 


2N3668 


541 


SCR 


116 


1N1190A 


576 


R 


38 


2N1488* 


67 


PT 


139 


2N3669 


541 


SCR 


116 


1N1195A 


576 


R 


6 


2N1489* 


67 


PT 


139 


2N3670 


541 


SCR 


116 


1N1196A 


576 


R 


6 


2N1490* 


67 


PT 


139 


2N3715 


99 


PT 


1058 


1N1197A 


576 


R 


6 


2N1613 


54 


PT 


106 


2N3716 


99 


PT 


1058 


1N1198A 


576 


R 


6 


2N1700 


60 


PT 


141 


2N3733 


425 


RF 


72 


1N1199A 


576 


R 


20 


2N1701 


65 


PT 


141 


2N3771* 


101 


PT 


974 


1N1200A 


576 


R 


20 


2N1702 


67 


PT 


141 


2N3772* 


101 


PT 


974 


1N1202A 


576 


R 


20 


2N1711 


54 


PT 


26 


2N3773 


105 


PT 


526 


1N1203A 


576 


R 


20 


2N1842A 


556 


SCR 


28 


2N3791 


109 


PT 


1059 


1N1204A 


576 


R 


20 


2N1843A 


556 


SCR 


28 


2N3792 


109 


PT 


1059 


1N1205A 


576 


R 


20 


2N1844A 


556 


SCR 


28 


2N3839 


426 


RF 


229 


1N1206A 


576 


R 


20 


2N1845A 


556 


SCR 


28 


2N3866* 


427 


RF 


80 


1N1341B 


576 


R 


58 


2N1846A 


556 


SCR 


28 


2N3870 


553 


SCR 


578 


1N1342B 


576 


R 


58 


2N1847A 


556 


SCR 


28 


2N3871 


553 


SCR 


578 


1N1344B 


576 


R 


58 


2N1848A 


556 


SCR 


28 


2N3872 


553 


SCR 


578 


1N1345B 


576 


R 


58 


2N1849A 


556 


SCR 


28 


2N3873 


553 


SCR 


578 


1N1346B 


576 


R 


58 


2N1850A 


556 


SCR 


28 


2N3878 


111 


PT 


766 


1N1347B 


576 


R 


58 


2N1893 


54 


PT 


34 


2N3879 


111 


PT 


766 


1N1348B 


576 


R 


58 


2N2102 


54 


PT 


106 


2N3896 


553 


SCR 


578 


1N3879 


577 


R 


726 


2N2270 


54 


PT 


24 


2N3897 


553 


SCR 


578 


1 N3880 


577 


R 


726 


2N2405 


54 


PT 


34 


2N3898 


553 


SCR 


578 


1N388h 


577 


R 


726 


2N2857* 


418 


RF 


61 


2N3899 


553 


SCR 


578 


1N3882 


577 


R 


726 


2N2876 


419 


RF 


32 


2N4012 


428 


RF 


90 


1 N3883 


577 


R 


726 


2N3053 


54 


PT 


960 


2N4036 


115 


PT 


216 


1 N3889 


577 


R 


727 


2N2053A 


54 


PT 


960 


2N4037 


115 


PT 


216 


1 N3890 


577 


R 


727 


2N3054 


69 


PT 


527 


2N4063 


84 


PT 


64 


1N3891 


577 


R 


727 


2N3055 


73 


PT 


994 


2N4064 


84 


PT 


64 


1N3892 


577 


R 


727 


2N3055 


77 


PT 


1077 


2N4101 


523 


SCR 


114 


1N3893 


577 


R 


727 


(Hometaxial) 








2N4102 


523 


SCR 


114 


1 N3899 


578 


R 


728 


2N3228 


523 


SCR 


114 


2N4103 


541 


SCR 


116 


1 N3900 


578 


R 


728 


2N3229* 


420 


RF 


50 


2N4231A 


118 


PT 


1102 


1N3901 


578 


R 


728 


2N3263 


82 


PT 


54 


2N4232A 


118 


PT 


1102 


1 N3902 


578 


R 


728 


2N3264 


82 


PT 


54 


2N4233A 


118 


PT 


1102 


1 N3903 


578 


R 


728 


2N3265 


82 


PT 


54 


2N4240 


96 


PT 


138 


1N3909 


578 


R 


729 


2N3266 


82 


PT 


54 


2N4314 


115 


PT 


216 


1N3910 


578 


R 


729 


2N3375* 


421 


RF 


386 


2N4347 


91 


PT 


528 


1N3911 


578 


R 


729 


2N3439* 


84 


PT 


64 


2N4348 


105 


PT 


526 


1N3912 


578 


R 


729 


2N3440* 


84 


PT 


64 


2N4427 


429 


RF 


228 


1N3913 


578 


R 


729 


2N3441* 


87 


PT 


529 


2N4440* 


430 


RF 


217 


2N681 


556 


SCR 


96 


2N3442* 


91 


PT 


528 


2N4904 


121 


PT 


1068 


2N682* 


556 


SCR 


96 


2N3478 


423 


RF 


77 


2N4905 


121 


PT 


1068 


2N683* 


556 


SCR 


96 


2N3525 


523 


SCR 


114 


2N4906 


121 


PT 


1068 


2N684* 


556 


SCR 


96 


2N3528 


523 


SCR 


114 


2N4913 


123 


PT 


1067 


2N685* 


556 


SCR 


96 


2N3529 


523 


SCR 


114 


2N4914 


123 


PT 


1067 


2N686 


556 


SCR 


96 


2N3553* 


421 


RF 


386 


2N4915 


123 


PT 


1067 


2N687* 


556 


SCR 


96 


2N3583 


96 


PT 


138 


2N4932 


431 


RF 


249 


2N688* 


556 


SCR 


96 


2N3584* 


96 


PT 


138 


2N4933 


431 


RF 


249 


2N689* 


556 


SCR 


96 


2N3585* 


96 


PT 


138 


2N5038* 


125 


PT 


698 


2N690* 


556 


SCR 


96 


2N3600 


424 


RF 


83 


2N5039* 


125 


PT 


698 


2N697 


54 


PT 


16 


2N3632 


421 


RF 


386 


2N5050 


130 


PT 


1098 


2N699 


54 


PT 


22 


2N3650 


564 


SCR 


408 


2N5051 


130 


PT 


1098 



Index to Devices 







Type of Bulletin 






Type of Bulletin 






Type of Bulletin 


Type No. 


Page 


Device 


File No. 


Type No. 


Page 


Device 


File No. 


Type No. 


Page 


Device 


File No. 


2N5052 


130 


PT 


1098 


2N5782 


158 


PT 


413 


2N6251 


204 


PT 


523 


2N5070 


432 


RF 


268 


2N5783 


158 


PT 


413 


2N6253 


77 


PT 


1077 


2N5071* 


433 


RF 


269 


2N5784 


158 


PT 


413 


2N6254 


77 


PT 


1077 


2N5090 


434 


RF 


270 


2N5785 


158 


PT 


413 


2N6257 


101 


PT 


974 


2N5102 


435 


RF 


279 


2N5786 


158 


PT 


413 


2N6259 


105 


PT 


526 


2N5109* 


436 


RF 


281 


2N5806 


503 


TRI 


913 


2N6260 


69 


PT 


527 


2N5179 


437 


RF 


288 


2N5807 


503 


TRI 


913 


2N6261 


69 


PT 


527 


2N5180 


439 


RF 


289 


2N5808 


503 


TRI 


913 


2N6262 


91 


PT 


528 


2N5202 


111 


PT 


766 


2N5809 


503 


TRI 


913 


2N6263 


87 


PT 


529 


2N5239 


132 


PT 


321 


2N5838* 


162 


PT 


410 


2N6264 


87 


PT 


529 


2N5240 


132 


PT 


321 


2N5839* 


162 


PT 


410 


2N6282 


207 


PT 


1001 


2N5293 


135 


PT 


322 


2N5840* 


162 


PT 


410 


2N6283 


207 


PT 


1001 


2N5294 


135 


PT 


322 


2 N 5869 


165 


PT 


1070 


2N6284 


207 


PT 


1001 


2N5295 


135 


PT 


322 


2N5870 


165 


PT 


1070 


2N6285 


207 


PT 


1001 


2N5296 


135 


PT 


322 


2N5871 


167 


PT 


1066 


2 N 6286 


207 


PT 


1001 


2N5297 


135 


PT 


322 


2N5872 


167 


PT 


1066 


2N6287 


207 


PT 


1001 


2N5298 


135 


PT 


322 


2N5873 


167 


PT 


1066 


2N6288 


190 


PT 


676 


2N5301 


139 


PT 


1029 


2 N 5874 


167 


PT 


1066 


2N6289 


190 


PT 


676 


2N5302 


139 


PT 


1029 


2N5875 


169 


PT 


1065 


2N6290 


190 


PT 


676 


2N5303 


139 


PT 


1029 


2N5876 


169 


PT 


1065 


2N6291 


190 


PT 


676 


2N5320 


142 


PT 


325 


2N5877 


169 


PT 


1065 


2N6292 


190 


PT 


676 


2N5321 


142 


PT 


325 


2IM5878 


169 


PT 


1065 


2N6293 


190 


PT 


676 


2N5322 


142 


PT 


325 


2N5879 


171 


PT 


1064 


2 N 6300 


210 


PT 


1095 


2N5323 


142 


PT 


325 


2N5880 


171 


PT 


1065 


2IM6301 


210 


PT 


1095 


2N5415* 


145 


PT 


336 


2N5881 


171 


PT 


1065 


2N6306 


212 


PT 


885 


2N5416* 


145 


PT 


336 


2 N 5882 


171 


PT 


1065 


2N6307 


212 


PT 


885 


2N5441 


503 


TRI 


593 


2N5885 


173 


PT 


1041 


2 N 6308 


212 


PT 


885 


2N5442 


503 


TRI 


593 


2N5886 


173 


PT 


1041 


2N6312 


118 


PT 


1102 


2N5443 


503 


TRI 


593 


2N5913 


440 


RF 


423 


2N6313 


118 


PT 


1102 


2N5444 


503 


TRI 


593 


2N5954 


175 


PT 


675 


2N6314 


118 


PT 


1102 


2N5445 


503 


TRI 


593 


2N5955 


175 


PT 


675 


2N6326 


215 


PT 


1040 


2N5446 


503 


TRI 


593 


2N5956 


175 


PT 


675 


2N6327 


215 


PT 


1040 


2N5490 


148 


PT 


353 


2N6032 


180 


PT 


462 


2N6342A 


493 


TRI 


1084 


2N5491 


148 


PT 


353 


2N6033 


180 


PT 


462 


2N6343A 


493 


TRI 


1084 


2N5492 


148 


PT 


353 


2N6055 


217 


PT 


563 


2N6344A 


493 


TRI 


1084 


2N5493 


148 


PT 


353 


2N6056 


217 


PT 


563 


2N6345A 


493 


TRI 


1084 


2N5494 


148 


PT 


353 


2N6077 


183 


PT 


492 


2N6346A 


493 


TRI 


1084 


2N5495 


148 


PT 


353 


2N6078 


183 


PT 


492 


2 N 6347 A 


493 


TRI 


1084 


2N5496 


148 


PT 


353 


2N6079 


183 


PT 


492 


2N6348A 


493 


TRI 


1084 


2N5497 


148 


PT 


353 


2N6098 


187 


PT 


485 


2N6349A 


493 


TRI 


1084 


2N5567 


480 


TRI 


457 


2N6099 


187 


PT 


485 


2N6354 


125 


PT 


582 


2N5568 


480 


TRI 


457 


2N6100 


187 


PT 


485 


2N6371 


77 


PT 


1077 


2N5569 


480 


TRI 


457 


2N6101 


187 


PT 


485 


2N6372 


175 


PT 


675 


2N5570 


480 


TRI 


457 


2N6102 


187 


PT 


485 


2N6373 


175 


PT 


675 


2N5571 


480 


TRI 


458 


2N6103 


187 


PT 


485 


2 N 6374 


175 


PT 


675 


2N5572 


480 


TRI 


458 


2N6106 


190 


PT 


676 


2N6383 


217 


PT 


609 


2N5573 


480 


TRI 


458 


2N6107 


190 


PT 


676 


2N6384 


217 


PT 


609 


2N5574 


480 


TRI 


458 


2N6108 


190 


PT 


676 


2N6385 


217 


PT 


609 


2N5575 


151 


PT 


359 


2N6109 


190 


PT 


676 


2N6386 


221 


PT 


610 


2N5578 


151 


PT 


359 


2N6110 


190 


PT 


676 


2N6387 


221 


PT 


610 


2N5632 


154 


PT 


1094 


2N6111 


190 


PT 


676 


2N6388 


221 


PT 


610 


2N5633 


154 


PT 


1094 


2N6211* 


197 


PT 


507 


2N6394 


546 


SCR 


891 


2N5634 


154 


PT 


1094 


2N6212* 


197 


PT 


507 


2N6395 


546 


SCR 


891 


2N5671* 


156 


PT 


383 


2N6213* 


197 


PT 


507 


2N6396 


546 


SCR 


891 


2N5672* 


156 


PT 


383 


2N6214 


197 


PT 


507 


2N6397 


546 


SCR 


891 


2N5754 


461 


TRI 


414 


2N6246 


200 


PT 


677 


2N6398 


546 


SCR 


891 


2N5755 


461 


TRI 


414 


2N6247 


200 


PT 


677 


2N6400 


546 


SCR 


892 


2N5756 


461 


TRI 


414 


2N6248 


200 


PT 


677 


2N6401 


546 


SCR 


892 


2N5757 


461 


TRI 


414 


2N6249 


204 


PT 


523 


2N6402 


546 


SCR 


892 


2N5781 


158 


PT 


413 


2N6250 


204 


PT 


523 


2N6403 


546 


SCR 


892 



Index to Devices 







Type of Bulletin 






Type of Bulletin 




Type of Bulletin 


Type No. 


Page 


Device 


File No. 


Type No. 


Page 


Device 


File No. 


Type No. 


Page Device 


File No. 


2N6404 


546 


SCR 


892 


2N6676 


267 


PT 


1087 


40631 


276 


PT 


965 


2N6420 


224 


PT 


1100 


2N6677 


267 


PT 


1087 


40634 


Same as RCA1A05 


2N6421 


224 


PT 


1100 


2N6678 


267 


PT 


1087 


40635 


Same 


as RCA1A06 


2N6422 


224 


PT 


1100 


40250, V1 


69 


PT 


112 


40636 


Same 


as RCA1B01 


2N6465 


175 


PT 


888 


40251 


77 


PT 


112 


40814 


Same as RCA1A07 


2N6466 


175 


PT 


888 


40280 


443 


RF 


68 


40815 


Same as RCA1A08 


2N6467 


175 


PT 


888 


40290 


444 


RF 


70 


40829 


175 


PT 


675 


2N6468 


175 


PT 


888 


40291 


444 


RF 


70 


40830 


175 


PT 


675 


2N6469 


200 


PT 


677 


40292 


444 


RF 


70 


40831 


175 


PT 


675 


2N6470 


200 


PT 


677 


40310 


270 


PT 


962 


40850 


278 


PT 


964 


2N6471 


200 


PT 


677 


40311 


270 


PT 


962 


40851 


278 


PT 


964 


2N6472 


200 


PT 


677 


40312 


270 


PT 


962 


40852 


278 


PT 


964 


2N6473 


190 


PT 


676 


40313 


270 


PT 


962 


40854 


278 


PT 


964 


2N6474 


190 


PT 


676 


40314 


270 


PT 


962 


40871 


281 


PT 


699 


2N6475 


190 


PT 


676 


40316 


270 


PT 


962 


40872 


281 


PT 


699 


2N6476 


190 


PT 


676 


40317 


270 


PT 


962 


40894 


447 


RF 


548 


2N6477 


227 


PT 


680 


40318 


270 


PT 


962 


40895 


447 


RF 


548 


2N6478 


227 


PT 


680 


40319 


270 


PT 


962 


40896 


447 


RF 


548 


2N6479 


230 


PT 


702 


40321 


270 


PT 


962 


40897 


447 


RF 


548 


2N6480 


230 


PT 


702 


40322 


270 


PT 


962 


40910 


69 


PT 


527 


2N6486 


233 


PT 


678 


40323 


270 


PT 


962 


40911 


69 


PT 


527 


2N6487 


233 


PT 


678 


40324 


270 


PT 


962 


40912 


87 


PT 


529 


2N6488 


233 


PT 


678 


40325 


270 


PT 


962 


40913 


87 


PT 


529 


2N6489 


233 


PT 


678 


40327 


270 


PT 


962 


40936 


448 


RF 


551 


2N6490 


233 


PT 


678 


40340 


445 


RF 


74 


40964 


449 


RF 


581 


2N6491 


233 


PT 


678 


40341 


445 


RF 


74 


40965 


449 


RF 


581 


2N6496 


125 


PT 


698 


40346, V1,V2 


84 


PT 


211 


40979 


Same 


as RCA1C10 


2N6500 


111 


PT 


766 


40347,V1,V2 


60 


PT 


88 


40980 


Same 


as RCA1C11 


2N6510 


235 


PT 


848 


40348, V1.V2 


60 


PT 


88 


41024 


450 


RF 


658 


2N6511 


235 


PT 


848 


40349, V1.V2 


60 


PT 


88 


41500 


190 


PT 


772 


2N6512 


235 


PT 


848 


40360 


Same as RCA1A01 


41501 


190 


PT 


770 


2N6513 


235 


PT 


848 


40362 


270 


PT 


962 


41502 


54 


PT 


773 


2N6514 


235 


PT 


848 


40363 


270 


PT 


962 


41503 


115 


PT 


774 


2N6530 


238 


PT 


873 


40366 


54 


PT 


215 


41504 


276 


PT 


965 


2N6531 


238 


PT 


873 


40367 


60 


PT 


215 


BD142 


283 


PT 


701 


2N6532 


238 


PT 


873 


40368 


65 


PT 


215 


BD181 


285 


PT 


700 


2N6533 


238 


PT 


873 


40369 


67 


PT 


215 


BD182 


285 


PT 


700 


2N6534 


242 


PT 


874 


40372 


69 


PT 


527 


BD183 


285 


PT 


700 


2N6535 


242 


PT 


874 


40373 


87 


PT 


529 


BD239,A,B,C 


288 


PT 


669 


2N6536 


242 


PT 


874 


40374 


96 


PT 


138 


BD240,A,B,C 


288 


PT 


670 


2N6537 


242 


PT 


874 


40375 


111 


PT 


766 


BD241,A,B,C 


290 


PT 


671 


2N6542 


246 


PT 


1096 


40385 


84 


PT 


215 


BD242,A,B,C 


290 


PT 


672 


2N6544 


246 


PT 


1096 


40389 


54 


PT 


960 


BD243,A,B,C 


292 


PT 


673 


2N6546 


246 


PT 


1096 


40390 


84 


PT 


64 


BD244,A,B,C 


292 


PT 


674 


2N6569 


73 


PT 


994 


40391 


115 


PT 


216 


BD277 


294 


PT 


667 


2N6594 


73 


PT 


994 


40392 


54 


PT 


960 


BD278,A 


295 


PT 


969 


2N6609 


250 


PT 


1061 


40394 


115 


PT 


216 


BD450 


297 


PT 


1107 


2N6648 


253 


PT 


1013 


40406 


274 


PT 


219 


BD451 


297 


PT 


1107 


2N6649 


253 


PT 


1013 


40407 


274 


PT 


219 


BD500,A,B 


299 


PT 


1108 


2N6650 


253 


PT 


1013 


40408 


274 


PT 


219 


BD501,A,B 


299 


PT 


1108 


2N6666 


255 


PT 


1069 


40409 


274 


PT 


219 


BD550,A,B 


301 


PT 


1109 


2N6667 


255 


PT 


1069 


40410 


274 


PT 


219 


BDX18 


73 


PT 


994 


2N6668 


255 


PT 


1069 


40411 


274 


PT 


219 


BDX33,A,B,C 


307 


PT 


693 


2N6669 


258 


PT 


1071 


40412,V1,V2 


84 


PT 


211 


BDX34,A,B,C 


307 


PT 


694 


2N6670 


441 


PT 


1091 


40537 


270 


PT 


320 


BDX83,A,B,C 


310 


PT 


955 


2N6671 


260 


PT 


1090 


40538 


270 


PT 


320 


BDY29 


313 


PT 


819 


2N6672 


260 


PT 


1090 


40539 


270 


PT 


303 


BDY37 


315 


PT 


863 


2N6673 


260 


PT 


1090 


40594 


Same as RCA1A03 


BDY71 


317 


PT 


859 


2N6674 


264 


PT 


1085 


40595 


Same as RCA1A04 


BFT19,A,B 


319 


PT 


683 


2N6675 


264 


PT 


1085 


40608 


446 


RF 


356 


BFT28,A,B 


321 


PT 


815 



Index to Devices 







Type of 


Bulletin 






Type of 


Bulletin 






Type of Bulletin 


Type No. 


Page 


Device 


File No. 


Type No. 


Page 


Device 


File No. 


Type No. 


Page 


Device 


File No. 


BU106 


323 


PT 


716 


RCA1A10 


346 


PT 


651 


RCP117,B 


383 


PT 


822 


BU126 


325 


PT 


968 


RCA1A11 


346 


PT 


651 


RCP131A,B,C,D 


386 


PT 


904 


BU133 


325 


PT 


968 


RCA1A15 


346 


PT 


651 


RCP133A,B,C,D 


386 


PT 


904 


BU207 


326 


PT 


1088 


RCA1A16 


346 


PT 


651 


RCP135,B 


386 


PT 


904 


BU208.A 


326 


PT 


1088 


RCA1A17 


346 


PT 


651 


RCP137,B 


386 


PT 


904 


BUX16,A,B,C 


329 


PT 


800 


RCA1A18 


346 


PT 


651 


RCP700A,B,C,D 


388 


PT 


821 


BUX17,A,B,C 


332 


PT 


818 


RCA1A19 


346 


PT 


651 


RCP701A,B,C,D 


388 


PT 


820 


BUX18,A,B,C 


335 


PT 


862 


RCA1B01 


350 


PT 


647 


RCP702A,B,C,D 


388 


PT 


821 


BUX66,A,B,C 


337 


PT 


870 


RCA1B04 


351 


PT 


908 


RCP703A,B,C,D 


388 


PT 


820 


BUX67,A,B,C 


337 


PT 


871 


RCA1B05 


351 


PT 


908 


RCP704,B 


388 


PT 


821 


C106A,B,C,D,E, 


514 


SCR 


1005 


RCA1B06 


357 


PT 


648 


RCP705,B 


388 


PT 


820 


F,M,Q,Y 








RCA1B09 


351 


PT 


908 


RCP706,B 


388 


PT 


821 


C107A,B,C,D,E, 


514 


SCR 


1005 


RCA1C03 


358 


PT 


652 


RCP707,B 


388 


PT 


820 


F,M,Q,Y 








RCA1C04 


358 


PT 


652 


RCS29,A,B,C 


394 


PT 


880 


C108A,B,C,D,E, 


514 


SCR 


1005 


RCA1C05 


359 


PT 


644 


RCS30,A,B,C 


396 


PT 


881 


F,M,Q,Y 








RCA1C06 


359 


PT 


644 


RCS31,A,B,C 


398 


PT 


882 


CH2102 


413 


PT 


632 


RCA1C07 


361 


PT 


646 


RCS32,A,B,C 


400 


PT 


883 


CH2270 


413 


PT 


632 


RCA1C08 


361 


PT 


646 


RCS258 


101 


PT 


974 


CH2405 


413 


PT 


632 


RCA1C09 


363 


PT 


645 


RCS579 


212 


PT 


886 


CH3053 


413 


PT 


632 


RCA1C10 


364 


PT 


642 


RCS617 


73 


PT 


994 


CH3439 


413 


PT 


632 


RCA1C11 


364 


PT 


642 


RCS618 


73 


PT 


994 


CH3440 


413 


PT 


632 


RCA1C12 


358 


PT 


652 


RCS683,A,B 


392 


PT 


974 


CH4036 


413 


PT 


632 


RCA1C13 


358 


PT 


652 


RCS880 


145 


PT 


777 


CH4037 


413 


PT 


632 


RCA1C14 


366 


PT 


643 


RCS881 


145 


PT 


780 


CH5320 


413 


PT 


632 


RCA1C15 


367 


PT 


1010 


RCS882 


145 


PT 


781 


CH5321 


413 


PT 


632 


RCA1C16 


367 


PT 


1010 


S106A,B,C,D,E, 


517 


SCR 


966 


CH5322 


413 


PT 


632 


RCA1 E02 


369 


PT 


653 


F,M,Q,Y 








CH5323 


413 


PT 


632 


RCA1 E03 


369 


PT 


653 


S107A,B,C,D,E, 


517 


SCR 


966 


CH6479 


413 


PT 


632 


RCA29,A,B,C 


394 


PT 


583 


F,M,Q,Y 








D2101S 


535 


R 


522 


RCA30,A,B,C 


396 


PT 


584 


S122A,B,C,D,E, 


529 


SCR 


889 


D2103SF 


535 


R 


522 


RCA31,A,B,C 


398 


PT 


585 


F,M,S 








D2406A,B.C,D, 


577 


R 


663 


RCA32,A,B,C 


400 


PT 


586 


S2060A,B,C,D 


520 


SCR 


654 


F,M 








RCA41,A,B,C 


402 


PT 


587 


E,F,M,Q,Y 








D2412A,B,C,D, 


577 


R 


664 


RCA42,A,B,C 


404 


PT 


588 


S2061A,B,C,D 


520 


SCR 


654 


F,M 








RCA120 


408 


PT 


840 


E,F,M,Q,Y 








D2520A,B,C,D, 


578 


R 


665 


RCA121 


408 


PT 


840 


S2062A,B,C,D, 


520 


SCR 


654 


F,M 








RCA122 


408 


PT 


840 


E,F,M,Q,Y 








D2540A,B,D,F,M 


578 


R 


580 


RCA125 


411 


PT 


841 


S2600B,D,M 


526 


SCR 


496 


D2600M 


535 


R 


839 


RCA126 


411 


PT 


841 


S2610B,D,M 


526 


SCR 


496 


D2601E,M 


535 


R 


723 


RCA410 


370 


PT 


509 


S2620B,D,M 


526 


SCR 


496 


D3202U,Y 


574 


D 


577 


RCA411 


372 


PT 


510 


S2710B,D,M 


523 


SCR 


266 


G4000A,B,D 


570 


SCR 


1052 


RCA413 


374 


PT 


511 


S2800A,B,C,D, 


529 


SCR 


890 


G4001A,B,D 


570 


SCR 


1052 


RCA423 


376 


PT 


512 


E,F,M,S 








HC2000H 


452 


PH 


566 


RCA431 


378 


PT 


513 


S3700B,D,M 


532 


SCR 


306 


HC2500 


452 


PH 


681 


RCA1000 


217 


PT 


594 


S3701M 


533 


SCR 


476 


MAC15,A 


496 


TRI 


1086 


RCA1001 


217 


PT 


594 


S3702S 


535 


SCR 


522 


MJ2955 


73 


PT 


994 


RCA3054 


135 


PT 


618 


S3703SF 


535 


SCR 


522 


MJ15001 


341 


PT 


1093 


RCA3055 


187 


PT 


618 


S3704A,B,D,M,S 


532 


SCR 


690 


MJ 15002 


341 


PT 


1093 


RCA3441 


227 


PT 


666 


S3705M 


535 


SCR 


839 


MJ 15003 


343 


PT 


1060 


RCA3733 


743 


PT 


1060 


S3706E 


535 


SCR 


839 


MJ 15004 


250 


PT 


1060 


RCA6263 


227 


PT 


666 


S3714A,B,D,M,S 


532 


SCR 


690 


RCA1A01 


346 


PT 


651 


RCA8203A,B 


255 


PT 


835 


S3900MF,S,SF 


538 


ITR 


938 


RCA1A02 


346 


PT 


651 


RCA8350A,B 


253 


PT 


861 


S3901M,MF, S 


538 


ITR 


938 


RCA1A03 


346 


PT 


651 


RCA8638C,D,E 


343 


PT 


1060 


S3902DF 


538 


ITR 


938 


RCA1A04 


346 


PT 


651 


RCA8766A,B,C, 


380 


PT 


973 


S3903MF 


538 


ITR 


938 


RCA1A05 


346 


PT 


651 


D 








S5800B,C,D,E,M 


544 


SCR 


1051 


RCA1A06 


346 


PT 


651 


RCA9116C,D,E 


250 


PT 


1061 


S5801B,C,D,E,M 


544 


SCR 


1051 


RCA1A07 


346 


PT 


651 


RCP111A,B,C,D 


383 


PT 


822 


S5802B,C,D,E,M 


544 


SCR 


1051 


RCA1A08 


346 


PT 


651 


RCP113A,B,C,D 


383 


PT 


822 


S6000C,E,S 


546 


SCR 


891 


RCA1A09 


346 


PT 


651 


RCP115,B 


383 


PT 


822 


S6100C,E,S 


546 


SCR 


892 



Index to Devices 







Type of Bulletin 






Type of Bulletin 






Type of 


Bulletin 


Type No. 


Page 


Device 


File No. 


Type No. 


Page 


Device 


File No. 


Type No. 


Page 


Device 


File No. 


S6200A,B,D,M 


549 


SCR 


418 


T2327A,B,C,D, 


466 


TRI 


1042 


T6001B,C,D,E, 


490 


TRI 


1004 


S6210A,B,D,M 


549 


SCR 


418 


E,F 








F,M 








S6220A,B,D,M 


549 


SCR 


418 


T2500B.D 


469 


TRI 


615 


T6006B,C,D,E, 


490 


TRI 


1004 


S6230A,B,D,M 


552 


SCR 


877 


T2506B.D 


512 


TRI 


406 


M 








S6240A,B,D,M 


552 


SCR 


877 


T2700B.D 


471 


TRI 


351 


T6401B,D,E,F,M 


503 


TRI 


459 


S6250A,B,D,M 


552 


SCR 


877 


T2706B,D 


512 


TRI 


406 


T6404B,D,E 


507 


TRI 


487 


S6400N 


553 


SCR 


578 


T2710B,D 


471 


TRI 


351 


T6405B,D,E 


507 


TRI 


487 


S6410N 


553 


SCR 


578 


T2716B.D 


512 


TRI 


406 


T6406B,D,E,M 


512 


TRI 


406 


S6420A,B,D,M,N 


553 


SCR 


578 


T2800A,B.C,D, 


473 


TRI 


838 


T6407B,D,E,M 


512 


TRI 


406 


S6430A,B,D,M,N 


552 


SCR 


877 


E.F,M 








T6411B,D,E,F,M 


503 


TRI 


459 


S6440A,B.D,M,N 


552 


SCR 


877 


T2801A,B,C,D, 


473 


TRI 


837 


T6414B.D 


507 


TRI 


487 


S6450A,B,D,M,N 


552 


SCR 


877 


E,F,M 








T6415B.D 


507 


TRI 


487 


S6493M 


559 


SCR 


247 


T2802B,C,D,E,M 


473 


TRI 


838 


T6416B,D,M 


512 


TRI 


406 


S7310B,C,D,E,M 


561 


SCR 


975 


T2806B,D 


512 


TRI 


406 


T6417B,D,M 


512 


TRI 


406 


S7410M 


564 


SCR 


408 


T2850A,B,D,E,F 


473 


TRI 


540 


T6420B,D,E,F,M 


503 


TRI 


593 


S7412M 


564 


SCR 


724 


T2851B,C,D,E 


477 


TRI 


1083 


T6421B,D,E,F,M 


503 


TRI 


459 


S8610A,B,D,M 


566 


SCR 


1020 


T2856B.D 


512 


TRI 


406 


T6426B,D,M 


512 


TRI 


406 


S8611A,B,D,M 


566 


SCR 


1.020 


T4100E,F,M 


480 


TRI 


458 


T6427B,D,M 


512 


TRI 


406 


S8612A,B,D,M 


566 


SCR 


1020 


T4101E,F,M 


480 


TRI 


457 


T6430B,D,E,F,M 


486 


TRI 


878 


S8613A,B,D,M 


566 


SCR 


1020 


T4103B,D,E,M 


484 


TRI 


443 


T6431B,D,E,F,M 


486 


TRI 


878 


S8620A,B,D,M 


566 


SCR 


1020 


T4104B,D,E,M 


484 


TRI 


443 


T6440B,D,E,F,M 


486 


TRI 


878 


S8621A,B,D,M 


566 


SCR 


1020 


T4105B,D,M 


484 


TRI 


443 


T6441B,D,E,F,M 


486 


TRI 


878 


S8622A,B,D,M 


566 


SCR 


1020 


T4106B,D,M 


512 


TRI 


406 


T6450B,D,E,F,M 


486 


TRI 


878 


S8623A,B,D,M 


566 


SCR 


1020 


T4107B,D,M 


512 


TRI 


406 


T6451B,D,E,F,M 


486 


TRI 


878 


SC149B,D.E,M 


498 


TRI 


1082 


T4110E,F,M 


480 


TRI 


458 


T8411B,D,E,F,M 


509 


TRI 


725 


SC151B,D,E,M 


498 


TRI 


1082 


T4111E,F,M 


480 


TRI 


457 


T8421B,D,E,F,M 


509 


TRI 


725 


T2300A,B,D,F 


458 


TRI 


911 


T4113B,D,E,M 


484 


TRI 


443 


TIC236B.D 


501 


TRI 


1078 


T2301A,B,D,F 


458 


TRI 


911 


T4114B,D,E,M 


484 


TRI 


443 


TIC246B,D 


501 


TRI 


1078 


T2302A,B,D,F 


458 


TRI 


911 


T4115B / D,E,M 


484 


TRI 


443 


TIP29,A,B,C 


394 


PT 


990 


T2303F 


461 


TRI 


912 


T4116B,D,M 


512 


TRI 


406 


TIP30,A,B,C 


396 


PT 


988 


T2304B,D 


464 


TRI 


441 


T4117B,D,M 


512 


TRI 


406 


TIP31,A,B,C 


398 


PT 


991 


T2305B,D 


464 


TRI 


441 


T4120B,D,E,F,M 


480 


TRI 


458 


TIP32,A,B,C 


400 


PT 


987 


T2306A,B,D 


512 


TRI 


406 


T4121B,D,E,F,M 


480 


TRI 


457 


TIP41,A,B,C 


402 


PT 


992 


T2310A,B,D,F 


458 


TRI 


911 


T4126B,D,M 


512 


TRI 


406 


TIP42,A,B,C 


404 


PT 


996 


T2311A,B,D,F 


458 


TRI 


911 


T4127B,D,M 


512 


TRI 


406 


TIP47 


406 


PT 


978 


T2312A,B,D,F 


458 


TRI 


911 


T4130B,D,E,F,M 


486 


TRI 


878 


TIP48 


406 


PT 


978 


T2313A,B,D,F,M 


461 


TRI 


912 


T4131B,D,E,F,M 


486 


TRI 


878 


TIP49 


406 


PT 


978 


T2316A,B,D 


512 


TRI 


406 


T4140B,D,E,F,M 


486 


TRI 


878 


TIP50 


406 


PT 


978 


T2320A,B,C,D, 


466 


TRI 


1042 


T4141B,D,E,F,M 


486 


TRI 


878 


TIP120 


408 


PT 


. 998 


E,F 








T4150B,D,E,F,M 


486 


TRI 


878 


TIP121 


408 


PT 


998 


T2322A,B,C,D, 


466 


TRI 


1042 


T4151B,D,E,F,M 


486 


TRI 


878 


TIP122 


408 


PT 


998 


E,F 








T4700B,D,E,F 


488 


TRI 


300 


TIP125 


411 


PT 


997 


T2323A,B,C,D 


466 


TRI 


1042 


T6000B,C ( D,E, 


490 


TRI 


1004 


TIP126 


411 


PT 


997 


E,F 








F,M 








TIP127 


411 


PT 


997 



BR = Bridge rectifier 

D = Diac 

GTO = Gate-turn-off SCR 

ITR = Integrated thyristor/rectif ier 



PH = Power hybrid circuit 

PT = Power transistor 

R = Rectifier 

RA = Rectifier assembly 



RF = RF power transistor 
SCR = Silicon controlled rectifier 
TRI = Triac 
* JAN-type versions also available. 



Power Transistor Selection Charts 



N-P-N SILICON POWER TRANSISTORS 



Type No. 


VcEO^us) 


Current Gain 


pt 


>C 


*T 


Sw. Times* 


Package 


p-n-p 


hFE 


ic 


VCE 


*0N 


tf 












(Max.) 


(Max.) 










Complement 




V 




A 


V 


W 


A 


MHz 


jus 






l C (Max.) = 0.15 to 1 A, fj = 3 to 25 MHz 


40346 


175 


25 min. 


0.010 


10 


10 


1 


15 


_ 


_ 


TO-39 


_ 


41505* 


200 


20 min. 


0.050 


10 


20 


1 


21 


_ 


_ 


Plastic TO-5 


_ 


2 N 3440 


250 


40-160 


0.020 


10 


10 


1 


15 


— 


_ 


TO-39 


2N5415 


40412 


250* 


40 min. 


0.030 


20 


10 


1 


15 


_ 


_ 


TO-39 


— 


TIP47 


250 


10 min. 


1 


10 


40 


1 


5 


0.2 


0.5 


TO-220AB 


— 


40321 


300* 


25-200 


0.020 


10 


5 


1 


15 


— 


_ 


TO-39 


— 


TIP48 


300 


10 min. 


1 


10 


40 


1 


5 


0.2 


0.5 


TO-220AB 


_ 


2 N 3439 


350 


40-160 


0.020 


10 


10 


1 


15 


— 


_ 


TO-39 


2N5416 


TIP49 


350 


10 min. 


1 


10 


40 


1 


5 


0.2 


0.5 


TO-220AB 


_ 


TIP50 


400 


10 min. 


1 


10 


40 


1 


5 


0.2 


0.5 


TO-220AB 


- 


\q (Max.) = 


0.15 to 1 A,f 


r = 50to 100 MHz 












41502 


30 


20 min. 


0.150 


10 


3 


1 


60 


— 


_ 


TO-39 


41503 


2 N 3053 


40 


50-250 


0.150 


10 


5 


1 


60 


_ 


_ 


TO-39 


2N4037 


2 N 3053 A 


60 


50-250 


0.150 


10 


5 


0.7 


60 


— 


— 


TO-39 


_ 


2N2102 


65 


25 min. 


0.500 


10 


5 


1 


60 


30 ns® 


_ 


TO-39 


2N4036 


RCP115 


100 


50 min. 


0.025 


10 


6.25 


0.150 


80 


_ 


_ 


TO-202AB 


_ 


RCP117 


100 


20 min. 


0.025 


10 


6.25 


0.150 


80 


- 


- 


TO-202AB 


- 


RCP111A 


200 


50-300 


0.025 


10 


6.25 


0.150 


80 


_ 


_ 


TO-202AB 


_ 


RCP113A 


200 


30-150 


0.025 


10 


6.25 


0.150 


80 


— 


_ 


TO-202AB 


_ 


RCP111B 


250 


50-300 


0.025 


10 


6.25 


0.150 


80 


— 


_ 


TO-202AB 


_ 


RCP113B 


250 


30-150 


0.025 


10 


6.25 


0.150 


80 


— 


_ 


TO-202AB 


_ 


RCP115B 


250 


50 min. 


0.025 


10 


6.25 


0.150 


80 


- 


- 


TO-202AB 


- 


RCP117B 


250 


20 min. 


0.025 


10 


6.25 


0.150 


80 


_ 


_ 


TO-202AB 


_ 


RCP111C 


300 


50-300 


0.025 


10 


6.25 


0.150 


80 


_ 


_ 


TO-202AB 


_ 


RCP113C 


300 


30-150 


0.025 


10 


6.25 


0.150 


80 


— 


_ 


TO-202AB 


— 


RCP111D 


350 


50-300 


0.025 


10 


6.25 


0.150 


80 


— 


— 


TO-202AB 


— 


RCP113D 


350 


30-150 


0.025 


10 


6.25 


0.150 


80 


- 


- 


TO-202AB 


- 


IC (Max.) = 


1.5 to 2 A, fj 


= 0.2to1.5MHj 


I 
















2N1479 


40 


20-60 


0.200 


4 


5 


1.5 


1.4 


1.2 


1 


TO-39 


— 


2N1481 


40 


35-100 


0.200 


4 


5 


1.5 


1.4 


1.2 


1 


TO-39 


_ 


40347 


40 


20-150 


0.450 


4 


8.75 


1.5 


1.5 


_ 


_ 


TO-39 


_ 


2N1480 


55 


20-60 


0.200 


4 


5 


1.5 


1.4 


1.2 


1 


TO-39 


_ 


2N1482 


55 


35-100 


0.200 


4 


5 


1.5 


1.4 


1.2 


1 


TO-39 


_ 


40348 


65 


10 min. 


1 


4 


8.75 


1.5 


1.5 


— 


— 


TO-39 


_ 


40349 


140 


10 min. 


0.450 


4 


8.75 


1.5 


0.9 


- 


- 


TO-39 


- 


IC (Max.) = 


1.5 to 2 A, fy 


= 3 to 25 MHz 


















2 N 5050 


125 


5 


2 


5 


40 


2 


25 


0.3@ 


1.2 


TO-213MA 


_ 


BUX67 


150 


10-150 


1 


5 


35 


2 


10 


3 


3 


TO-66 


BUX66 


2N5051 


150 


5 


2 


5 


40 


2 


10 


0.3@ 


1.2 


TO-213MA 


_ 


2N5052 


200 


5 


2 


5 


40 


2 


10 


0.3@ 


1.2 


TO-213MA 


_ 


2 N 3584 


250 


8-80 


1 


2 


35 


2 


10 


3 


3 


TO-66 


2N6211 


BUX67A 


250 


10-150 


1 


5 


35 


2 


10 


3 


3 


TO-66 


BUX66A 


2N3585 


300 


8-80 


1 


2 


35 


2 


10 


3 


3 


TO-66 


2N6212 


2 N 4240 


300 


10-100 


0.750 


2 


35 


2 


15 


0.5 


3 


TO-66 


_ 


BUX67B 


300 


10-150 


1 


5 


35 


2 


10 


3 


3 


TO-66 


BUX66B 


BUX67C 


350 


10-150 


1 


5 


35 


2 


10 


3 


3 


TO-66 


BUX66C 


lc(Max.) = 


l.5to2A,fy = 


= 50 to 100 MHz 


















RCP705 


30 


50 min. 


0.500 


4 


10 


2 


50 


80 ns 


800 ns* 


TO-202AB 


RCP704 


RCP707 


30 


20 min. 


0.500 


4 


10 


2 


50 


80 ns 


800 ns* 


TO-202AB 


RCP706 


RCP701A 


40 


50-250 


0.500 


4 


10 


2 


50 


80 ns 


800 ns* 


TO-202AB 


RCP700A 


RCP703A 


40 


30-150 


0.500 


4 


10 


2 


50 


80 ns 


800 ns* 


TO-202AB 


RCP702A 


2N5321 


50 


40-250 


0.500 


4 


10 


2 


50 


80 ns 


800 ns* 


TO-39 


2N5323 


2N6179 


50 


40-250 


0.500 


4 


25 


2 


50 


80 ns 


800 ns* 


Plastic TO-5 


2N6181 


2N6670 


50 


30 


0.4 


2 


10 


1.5 


50 


— 


_ 


TO-202AB 


_ 


RCP701B 


60 


50-250 


0.500 


4 


10 


2 


50 


80 ns 


800 ns* 


TO-202AB 


RCP700B 


RCP703B 


60 


30-150 


0.500 


4 


10 


2 


50 


80 ns 


800 ns* 


TO-202AB 


RCP702B 


RCP705B 


60 


50 min. 


0.500 


4 


10 


2 


50 


80 ns 


800 ns* 


TO-202AB 


RCP704B 


RCP707B 


60 


20 min. 


0.500 


4 


10 


2 


50 


80 ns 


800 ns* 


TO-202AB 


RCP706B 


2N55320 


75 


30-130 


0.500 


4 


10 


2 


50 


80 ns 


800 ns* 


TO-39 


2N5322 


2N6178 


75 


30-130 


0.500 


4 


25 


2 


50 


80 ns 


800 ns* 


Plastic TO-5 


2N6180 


RCP701C 


80 


50-250 


0.500 


4 


10 


2 


50 


80 ns 


800 ns* 


TO-202AB 


RCP700C 


RCP703C 


80 


30-150 


0.500 


4 


10 


2 


50 


80 ns 


800 ns* 


TO-202AB 


RCP702C 


RCA1A03 


95* 


70-300 


0.300 


4 


10 


2 


50 


_ 


_ 


TO-39 


RCA1A04 


RCP701D 


100 


50-250 


0.500 


4 


10 


2 


50 


80 ns 


800 ns* 


TO-202AB 


RCP700D 


RCP703D 


100 


3a 150 


0.500 


4 


10 


2 


50 


80 ns 


800 ns* 


TO-202AB 


RCP702D 



^Measured at same current level as hpg unless otherwise indicated *Vcer(sus) * trjFF 
♦Check availability in Europe, the Middle East, and Africa. ® t d + t r + tf @ t r 



Power Transistor Selection Charts 



N-P-N SILICON POWER TRANSISTORS (cont'd) 
















Type No. 


VcEO( sus ) 


Current Gain 


PT 

(Max.) 


ic 

(Max.) 


fT 


Sw. Ti 


mes A 


Package 


p-n-p 
Complement 


hFE 


«C 


V C E 


tON I 


tf 




V 




A 


V 


W 


A 


MHz 


JUS 








lc(Max.) = 2.5to5A,fT = 


0.2 to 2 MHz 




2N1483 
2N1485 
2N5786 
2N5295 
2N5296 


40 
40 
40 
40 
40 


20-60 
35-100 
20-100 
30-120 
30-120 


0.750 

0.750 

1.6 

1 

1 


4 
4 
2 
4 
4 


25 
25 
10 
36 
36 


3 
3 

3.5 
4 
4 


0.8 

0.8 

1 

0.8 
0.8 


1.2 
1.2 

50 

5 

5 


1.1 
1.1 
15*0 
15* 
15* 


TO-8 

TO-8 

TO-39 

TO-220AB 

TO-220AB 


2N5783 
2N6108 
2N6109 


2N6260 

40250 

2N5785 

2N1484 

2N1486 


40 
40 
50 
55 
55 


3 min 
25 min. 
20-100 

20-80 
35-100 


4 

1.5 

1.2 

0.750 

0.750 


2 
4 
2 
4 
4 


29 
29 
10 
25 
25 


3 
4 

3.5 
3 
3 


0.8 

1 

1 

0.8 
0.8 


5O 
1.2 
1.2 


15*0 
1.1 
1.1 


TO-66 

TO-66 

TO-39 

TO-8 

TO-8 


2N5956 
2N5782 


2N3054 

RCA3054 

BOY71 

2N5297 

2N5298 


55 
55 
55 
60 
60 


5 min. 
5 min. 
5 min. 
20-80 
20-80 


3 
3 
3 

1.5 
1.5 


4 
4 
4 
4 
4 


25 
36 
29 
36 
36 


4 
4 
4 
4 
4 


0.8 
0.8 
0.8 
0.8 
0.8 


5 
5 


15* 
15* 


TO-66 

TO-220AB 

TO-66 

TO-220AA 

TO-220AB 


2N5955 

2N6106 
2N6107 


2N5784 
2N5293 
2N5294 
2N6261 
RCA8638E 


65 
70 
70 
80 
100 


20-100 
30-120 
30-120 
5 min. 
10 


1 

0.5 
0.5 

4 
7.5 


2 
4 
4 
2 
2 


10 
36 
36 
50 
200 


3.5 

4 

4 

4 
20 


1 

0.8 
0.8 
0.8 

2 


5 
5 
5 


15* 
15* 
15* 


TO-39 

TO-220AA 

TO-220AB 

TO-66 

TO-204MA 


2N5781 
2N6106 
2N6107 

RCA9116E 


RCA8638D 

2N6477 

2N6263 

RCA6263 

2N4347 


120 
120 
120 
120 
120 


10 
5 min. 
3 min. 
20-150 
10 min. 


10 
2.5 

3 
0.5 

5 


2 
4 
2 
4 
4 


200 
50 
20 
36 
100 


20 
2.5 

3 

3 

5 


2 

0.2 
0.2 
0.2 
0.2 


- 


- 


TO-204MA 

TO-220AB 

TO-66 

TO-220AB 

TO-3 


RCA9116D 

2N6468 

2N6248 


2N6478 

2N3441 

RCA3441 

RCA3773 

RCA8638C 


140 
140 
140 
140 
140 


5 min. 
5 min. 
20-150 

5 

10 


2.5 
2.7 
0.5 
16 
10 


4 
4 
4 
4 
2 


50 
25 
36 
150 
200 


2.5 

3 

3 

20 
20 


0.2 
0.2 
0.2 
2 

2 


- 


- 


TO-220AB 

TO-66 

TO-220AB 

TO-204MA 

TO-204MA 


2N6468 

2N6609 
RCA9116C 


MJ 15003 
2 N 6264 
BU207 
BU208 
BU208A 


140 
150 
600 
700 
700 


10 
5 min. 
2.25 
2.25 
2.5 


10 
3 

4.5 
4.5 
4.5 


2 
2 
5 
5 
5 


250 
50 
12.5 
12.5 
12.5 


20 
3 
5 
5 
5 


2 

0.2 
1 
1 
1 


- 


0.6 
0.6 
0.6 


TO-204MA 

TO-66 

TO-204MA 

TO-204MA 

TO-204MA 


MJ15004 


IC= 2.5 to S 


A, f j = 3 to 


25 MHz 












RCA29* 
RCA31* 
RCS29* 
RCS31* 
TIP29 


40 
40 
40 
40 
40 


15-150 
25 min. 
15-150 
25 min. 
15-150 


1 
1 
1 
1 
1 


4 
4 
4 
4 
4 


30 
40 
30 
40 
30 


3 
5 
3 
5 
3 


3 
3 
3 
3 
3 


0.4 
0.4 
0.4 
0.4 
0.4 


1.2* 
1.2* 
1.2* 
1.2* 
1.2* 


TO-220AB 

TO-220AB 

TO-66 

TO-66 

TO-220AB 


RCA30 
RCA32 
RCS30 
RCS32 
TIP30 


TIP31 

BD239 

BD241 

BD239A 

BD241A 


40 
45 
45 
60 
60 


25 min. 
15 min. 
25 min. 
15 min. 
25 min. 


1 
1 
1 
1 
1 


4 
4 
4 
4 
4 


40 
30 
40 
30 
40 


5 
4 
5 
4 
5 


3 
3 
3 
3 
3 


0.4 


1.2* 


TO-220AB 
TO-220AB 
TO-220AB 
TO-220AB 
TO-220AB 


TIP32 

BD240 

BD242 

BD240A 

BD242A 


RCA29A* 

RCA31A* 

TIP29A 

TIP31A 

BD239B 


60 
60 
60 
60 
80 


15-150 
25 min. 
15-150 
25 min. 
15 min. 


1 
1 
1 
1 
1 


4 
4 
4 
4 
4 


30 
40 
30 
40 
30 


3 
5 
3 
5 
4 


3 
3 
3 
3 
3 


0.4 
0.4 
0.4 
0.4 


1.2* 
1.2* 
1.2* 
1.2* 


TO-220AB 
TO-220AB 
TO-220AB 
TO-220AB 
TO-220AB 


RCA30A 

RCA32A 

TIP30A 

TIP32A 

BD240B 


BD241B 

RCA29B* 

RCA31B* 

TIP29B 

TIP31B 


80 
80 
80 
80 
80 


25 min. 

15-150 
25 min. 

15-150 
25 min. 


1 
1 
1 

1 
1 


4 
4 
4 
4 
4 


40 
30 
40 
30 
40 


5 
3 
5 
3 
5 


3 
3 
3 
3 
3 


0.4 
0.4 
0.4 
0.4 


1.2* 
1.2* 
1.2* 
1.2* 


TO-220AB 
TO-220AB 
TO-220AB 
TO-220AB 
TO-220AB 


BD242B 

RCA30B 

RCA32B 

TIP30B 

TIP32B 


2N6465 
2N6473 
2N5869 
2N5870 
BD239C 


100 
100 
60 
80 
100 


5 min. 
2 min. 

4 

4 
15 min. 


4 
4 
5 
5 
1 


4 

2.5 
4 
4 
4 


40 
40 
87.5 
87.5 
30 


4 
4 
5 
5 
4 


5 
4 
4 
4 
3 


.7@ 
.7@ 


0.8 
0.8 


TO-66 

TO-220AB 

TO-204MA 

TO-204MA 

TO-220AB 


2N6467 
2N6475 

BD240C 


BD241C 

RCA29C* 

RCA31C* 

TIP29C 

TIP31C 


100 
100 
100 
100 
100 


25 min. 
15-150 
25 min. 
15-150 
25 min 




4 
4 
4 
4 

4 


40 
30 
40 
30 
40 


5 
3 
5 
3 
5 


3 
3 
3 
3 
3 


0.4 
0.4 
0.4 
0.4 


1.2* 
1.2* 
1.2* 
1.2* 


TO-220AB 
TO-220AB 
TO-220AB 
TO-220AB 
I TO-220AB 


BD242C 

RCA30C 

RCA32C 

TIP30C 

TIP32C 



^Measured at same current level as hpg unless otherwise indicated 
♦Check availability in Europe, the Middle East, and Africa. 



'Vcer(sus) 



*tOFF 
OAtl C =1A 



Power Transistor Selection Charts 



N-P-N SILICON POWER TRANSISTORS (cont'd) 



Type No. 


VcEO(««l 
V 


Current Gain 


pt 

(Max.) 
W 


•c 

(Max.) 
A 


fT 
MHz 


Sw. Timet* 


Package 


p-n-p 
Complement 


hFE 


ic 

A 


VCE 
V 


tON tf 

MS 


IC= 2.5 to 5 


A, fy - 3 to 25 MHz (cont'd) 


















2N6466 
2 N 6474 
BUX16 
2N5239 
2N5838 


120 
120 
200 
225 
250 


5 min. 
2 min. 
5 min. 
5 min. 
8-40 


4 

4 

4.5 
4.5 

3 


4 

2.5 
10 
10 
2 


40 
40 
100 
100 
100 


4 
4 
5 
5 
3 


5 
4 
5 
5 
5 


0.86 


0.4 


TO-66 

TO-220AB 

TO-3 

TO-3 

TO-3 


2N6468 
2N6476 


BU133 

BUX16A 

2N5839 

2N5240 

2N6542 


250 
250 
275 
300 
300 


15-80 
5 min. 
10-50 
5 min. 

7 


1 
4.5 

2 
4.5 

3 


5 
10 
3 
10 
2 


80 
100 
100 
100 
100 


3 
5 
3 
5 
5 


3.5 
5 
5 
5 
6 


0.67 
0.75 


0.5 
0.35 
0.8 


TO-3 
TO-3 
TO-3 
TO-3 
TO-204MA 


- 


BU126 
BUX16B 
2N5840 
BUX16C 


300 
300 
350 
350 


15-60 
5 min. 
10-50 
5 min. 


1 
4.5 

2 
4.5 


5 

10 
3 
10 


80 
100 
100 
100 


3 
5 
3 
5 


3.5 
5 
5 
5 


0.67 


0.5 
0.35 


TO-3 
TO-3 
TO-3 
TO-3 


- 


IC" 2.5 to 5 


A, fy- 50 to 100 Mr 


te 


















2N3878 
2N5202 
2N6500 


50 
50 
90 


20 min. 
10-100 
15-60 


4 
4 
3 


5 

1.2 
2 


35 
35 
35 


4 
4 
4 


40 
60 
60 


0.44 
0.44 


0.4 
0.5 


TO-66 
TO-66 
TO-66 


; 


IC"6to10> 


\, fj - 0.2 to 1 MHz 




















2N1487 
2N1489 
2N5490 
2N5491 
2N5494 


40 
40 
40 
40 
40 


15-45 
25-75 
20-100 
20-100 
20-100 


1.5 
1.5 
2 
2 
3 


4 

4 
4 
4 
4 


75 
75 
50 
50 
50 


6 
6 
7 
7 
7 


0.8 
0.8 
0.8 
0.8 
0.8 


5 
5 
5 


15* 
15* 
15* 


TO-3 

TO-3 

TO-220AB 

TO-220AA 

TO-220AB 


2N6109 
2N6108 
2N6109 


2N5495 

BD278 

2N1488 

2N1490 

2N5492 


40 
45 
55 
55 
55 


20-100 
15-75 
15-45 
25-75 

20-100 


3 

4 

1.5 
1.5 
2.5 


4 
4 
4 
4 
4 


50 
75 
75 
75 
50 


7 

10 
6 
6 
7 


0.8 
0.8 
0.8 
0.8 
0.8 


5 
5 


15* 
15* 


TO-220AA 

TO-220AB 

TO-3 

TO-3 

TO-220AB 


2N6108 
2N6107 


2N5493 
2N3715 
2N3716 
2N6098 
2N6099 


55 
60 
80 
60 
60 


20-100 

5 

5 
5 min. 
5 min. 


2.5 
10 
10 
10 
10 


4 
4 
4 
4 
4 


50 
150 
150 
75 
75 


7 

10 
10 
10 
10 


0.8 
25 
25 
0.8 
0.8 


5 


15* 


TO-220AA 
TO-204MA 
TO-204MA 
TO-220AA 
TO-220AB 


2N6106 


BD278A 
2N5496 
2N5497 
2N6100 
2N6101 


60 
70 
70 
70 
70 


15-75 
20-100 
20-100 
20-80 
20-80 


4 

3.5 
3.5 

5 

5 


4 
4 
4 
4 
4 


75 
50 
50 
75 
75 


10 

7 
7 

10 
10 


0.8 
0.8 
0.8 
0.8 
0.8 


5 
5 


15* 
15* 


TO-220AB 
TO-220AB 
TO-220AA 
TO-220AA 
TO-220AB 


2N6107 
2N6106 


2N5632 
2N4348 
2N5633 
2N5634 
2N3442 


100 
120 
120 
140 
140 


5 
10 min. 

5 

5 
7.5 min. 


10 
10 
10 
10 
10 


2 
4 
2 
2 
4 


150 
120 
150 
150 
117 


10 
10 
10 
10 
10 


1 
0.2 

1 

1 
0.8 


- 


- 


TO-204MA 

TO-3 

TO-204MA 

TO-204MA 

TO-3 


2IM6248 


2N6262 
2N6078 
2N6077 
2N6079 


150 
250 
275 
350 


5 min. 
12-70 
12-70 
12-50 


10 
1.2 
1.2 
1.2 


2 
1 
1 
1 


150 
45 
45 
45 


10 

7 
7 
7 


0.8 
1 
1 
1 


0.32 
0.32 
0.32 


0.3 
0.3 
0.3 


TO-3 
TO-66 
TO-66 
TO-66 


- 


ic = 6toio; 


K, fj = 2.5 to 25 MHz 




















41500 

2N6288 

2N6289 

2N6374 

RCA41* 


25 
30 
30 
40 
40 


25 min. 
2.3 min. 
2.3 min. 

5 min. 

15-150 


1 
7 
7 
6 
3 


4 
4 
4 
4 

4 


40 
40 
40 
40 
65 


7 
7 
7 
6 
7 


4 
4 
4 
4 
3 


0.6* 


t.4*» 


TO-220AB 

TO-220AB 

TO-220AA 

TO-66 

TO-220AB 


41501 

2N6111 

2N6110 

2N5956 

RCA42 


TIP41 

BD243 

2N6290 

2N5871 

2N5878 


40 
45 
50 
60 
80 


15-150 
15 min. 
2.3 min. 

4 

4 


3 
3 
7 

10 
10 


4 
4 
4 
4 

4 


65 
65 
40 
150 
150 


7 
7 
7 

10 
10 


3 
2 
4 
20 
20 


0.6* 


1.4*» 


TO-220AB 
TO-220AB 
TO-220AB 
TO204MA 
TO-204MA 


TIP42 
BD244 
2N6109 


2N6671 
2N6672 
2N6673 
2N6669 
BD243 


300 
350 
400 
30 
45 


10 
10 
10 
20 
15 min. 


5 
5 
5 
5 
3 


3 
3 
3 
2 
4 


150 
150 
150 
40 
65 


8 
8 
8 
10 

7 


15 
15 
15 
10 
2 


0.8® 
0.8® 
0.8® 
0.35 


0.8 
0.8 
0.8 
0.5 


TO-204MA 
TO-204MA 
TO-204MA 
TO-220AB 
TO-220AB 


BD244 


2N6290 
2N6291 


50 
50 


2.3 min. 
2.3 min. 


7 
7 


4 

4 


40 
40 


7 
7 


4 
4 


_ 


- 


TO-220AB 
TO-222AA 


2N6109 
2N6108 



10 



^Measured at same current level as hpE unless otherwise indicated 
♦Check availability in Europe, the Middle East, and Africa. 



*tOFF 
®t r 



•At l c - 6A 



Power Transistor Selection Charts 



N-P-N SILICON POWER TRANSISTORS (cont'd) 





Type No. 


VcEO(sus) 
V 


Current Gain 


pt 

(Max.) 
W 


ic 

(Max.) 
A 


fT 
MHz 


Sw. Times A 


Package 


p-n-p 
Complement 






hFE 


ic 

A 


VCE 
V 


tON tf 

jus 






IC = 6 to 10 A, fj = 2.5 to 25 MHz (cont'd) 








2N6373 
BD243A 
RCA41A A 


60 
60 
60 


5 min. 
15 min. 
15-150 


6 
3 
3 


4 
4 
4 


40 
65 
65 


6 

7 
7 


4 
3 
3 


0.6 # 


1.4** 


TO-66 I 

TO-220AB 

TO-220AB 


2N5955 
BD244A 
RCA42A 






TIP41A 
2N6292 
2N6293 
2N6372 
BD243B 


60 
70 
70 
80 
80 


15-150 
2.3 min. 
2.3 min. 

5 min. 
15 min. 


3 

7 
7 
6 
3 


4 
4 
4 
4 
4 


65 
40 
40 
40 
65 


7 
7 

7 
6 

7 


3 
4 
4 
4 
3 


0.6* 


1.4*» 


TO-220AB 

TO-220AB 

TO-220AA 

TO-66 

TO-220AB 


2N6107 
2N6106 
2N5954 
BD244B 






RCA41B 

TIP41B 

BD243C 

RCA41C 

TIP41C 


80 
80 
100 
100 
100 


15-150 
15-150 
15 min. 
15-150 
15-150 


3 
3 
3 
3 
3 


4 
4 
4 
4 
4 


65 
65 
65 
65 
65 


7 

7 
7 
7 
7 


3 
3 
3 
3 
3 


0.6* 
0.6 - 

0.6 # 
0.6* 


1.4*» 
1.4** 

1.4*» 
1.4*« 


TO-220AB 
TO-220AB 
TO-220AB 
TO-220AB 
TO-220AB 


RCA42B 

BD244C 
RCA42C 






BU106 

BUX17 

2N6249 

2N6510 

BUX18 


140 
150 
200 
200 
200 


8 min. 
7 min. 
10-50 
10-50 
7 min. 


4 
10 
10 
3 
6 


5 
3 
3 
3 
3 


75 
150 
175 
120 
120 


7 

10 
10 
7 
8 


3 

2.5 
8 
3 
3 


2 
0.8 @ 
0.8 


1.5 
1 

0.5 
0.5 
0.6* 


TO-3 
TO-3 
TO-3 
TO-3 
TO-3 


- 






RCA410 

2N6306 

2N6511 

BUX17A 

RCS579* 


200 
250 
250 
250 
250 


30 min. 
15-75 
10-50 

7 min. 

12 min. 


1 

3 

4 

10 

3 


5 
5 
3 
3 
5 


125 
125 
120 
150 
125 


7 
8 
7 

10 
8 


4 
5 
3 

2.5 
5 


0.35@ 

6 @ 

0.8 

2 

0.6 @ 


0.15 
0.4 
0.5 
1 
0.4 


TO-3 
TO-3 
TO-3 
TO-3 
TO-3 


- 






2N6250 

BUX18A 

2N6307 

2N6512 

2N6514 


275 
275 
300 
300 
300 


8-50 
7 min. 
15-75 
10-50 
10-50 


10 
5 
3 
4 
5 


3 
3 
5 
3 
3 


175 
120 
125 
120 
120 


10 
8 
8 

7 
7 


8 
3 
5 
3 
3 


0.8 @ 

0.6 @ 
1.7 
0.8 


0.5 
0.6* 
0.4 
1.5 
0.5 


TO-3 
TO-3 
TO-3 
TO-3 
TO-3 


- 






2N6544 
BUX17B 
RCA41 1 
RCA8767 
BUX18B 


300 
300 
300 
300 
325 


7 

7 min. 
30-90 

8 min. 
10 min. 


5 
8 
1 
6 
4 


2 
3 
5 
3 
3 


125 
150 
125 
175 
120 


8 
10 
7 

10 
8 


6 

2.5 
2.5 
20 

3 


1.05 

2 
0.35 @ 
0.4® 


1 

1 
0.15 
0.3 
0.6* 


TO-204MA 

TO-3 

TO-3 

TO-3 

TO-3 


- 






RCA413 

RCA423 

RCA431 

2N6251 

2N6308 


325 
325 
325 
350 
350 


15 min. 
30-90 
15-35 
6-50 
12-60 


1 
1 

2.5 
10 
3 


5 
5 
5 
3 
5 


125 
125 
125 
175 
125 


7 
7 
7 

10 
8 


4 
4 
4 
8 
5 


0.35 @ 
0.35@ 
0.35® 
8 @ 
0.6 @ 


0.15 
0.15 
0.15 
0.5 
0.4 


TO-3 
TO-3 
TO-3 
TO-3 
TO-3 


- 






2N6513 

BUX17C 

BUX18C 

RCA8766 

RCA8766A 


350 
350 
375 
350 
350 


10-50 
7 min. 

10 min. 

100 min. 

100 min. 


4 
8 
4 
6 
4 


3 
3 
3 
3 
3 


120 
150 
120 
150 
150 


7 

10 
8 
10 
10 


3 

2.5 
3 
10 
10 


0.8 
2 


0.5 

1 

0.6* 


TO-3 
TO-3 
TO-3 
TO-3 
TO-3 


- 






RCA8767A 

BUX18C 

RCA8766B 

RCA8766C 

RCA8767B 


350 
375 
400 
400 
400 


8 min. 
10 min. 
100 min. 
100 min. 

8 min. 


6 
4 
6 
4 
6 


3 
3 
3 
3 
3 


175 
120 
150 
150 
175 


10 
8 
10 
10 
10 


20 
3 

10 
10 
20 


0.4@ 
0.4@ 


0.3 
0.6* 

0.3 


TO-3 
TO-3 
TO-3 
TO-3 
TO-3 


- 






RCA8766D 
RCA8766E 


450 
450 


100 min. 
100 min. 


6 

4 


3 
3 


150 
150 


10 
10 


10 
10 


- 





TO-3 
TO-3 


— 






IC - 6 to 10 A, fj - 50 to 100 MHz 








2N3879 
2N6354 


75 
120 


12-100 
2 min. 


4 
10 


2 
2 


35 
140 


7 
10 


60 
80 


0.44 
1@ 


0.4 
0.2 


TO-66 
TO-3 


- 






IC = 12 to 20 A, fj = 0.2 to 2 MHz 








2N6102 
2N6103 
2N6257 
2N6371 
2N6569 


40 
40 
40 
40 
40 


5 min. 
5 min. 
5 min. 
4 min. 
5-100 


16 
16 
20 
16 
12 


4 
4 
4 
4 
4 


75 
75 
150 
117 
100 


16 
16 
20 
16 
12 


0.8 
0.8 
0.2 
0.8 
1.5 


1.9" 


1.5" 


TO-220AA 

TO-220AB 

TO-3 

TO-3 

TO-3 


2N6469 
2N6594 






RCA41/SDH* 

2N6253 

BD142 

B0181 

2N3055(Hom. 


40 
45 
45 
45 
60 


15 min. 
3 min. 

12.5-160 
20-70 
5 min. 


3 
15 
4 
3 
10 


4 
4 
4 
4 
4 


75 
115 
117 
117 
115 


16 
15 
15 
15 
15 


0.8 
0.8 
0.8 
0.8 
0.8 


3.23 @ 


3.7** 


TO-220AB 

TO-3 

TO-3 

TO-3 

TO-3 


2N6246 






2N3772 

BD182 

RCA3055 


60 
60 
60 


5 min. 
20-70 
5 min. 


20 
4 
10 


4 
4 
4 


150 
117 
75 


20 
15 
15 


0.2 
0.8 
0.8 


- 


- 


TO-3 
TO-3 
TO-220AB 


2N6246 






A Measured at same current level as hp£ 


unless oth 


erwise 


ndicated 


•Atl C = 


6A 


*Atlc = 


4A ®t r 


*t FF 






♦Check availability in Europe, the Midd 


e East, an 


d Afric 


a. 


■At I C = 


2A 











11 



Power Transistor Selection Charts 



N-P-N SILICON POWER TRANSISTORS (cont'd) 



Type No. 


VcEO< sus ) 


Current Gain 


pt 


ic 


*T 


Sw. Times* 


Package 


p-n-p 


"FE 


»c 


VCE 


*0N 


tf 












(Max.) 


(Max.) 










Complement 




V 




A 


V 


W 


A 


MHz 


jus 






IC = 12 to 20 A, fj = 0.2 to 2 MHz (cont'd) 


2N5881 


60 


4 


15 


4 


160 


15 


4 


_ 


_ 


TO-204MA 


2N5879 


RCS258* 


60 


5 min. 


20 


4 


250 


20 


0.2 


- 


- 


TO-3 




40363 


70* 


20-70 


4 


4 


115 


15 


0.7 





_ 


TO-3 




2N6254 


80 


5 min. 


15 


4 


150 


15 


0.8 


_ 


_ 


TO-3 


_ 


RCS617 


80 


20 


5 


4 


115 


15 


2.5 


— 


_ 


TO-204MA 


RCS618 


2N5882 


80 


4 


15 


4 


160 


15 


4 


_ 


_ 


TO-204MA 


2N5880 


BD183 


80 


20-70 


3 


4 


117 


15 


0.8 


- 


- 


TO-3 




RCA1801* 


95* 


20-70 


4 


4 


115 


15 


0.8 


_ 


_ 


TO-3 




2N3773 


120 


5 min. 


16 


4 


150 


16 


0.2 


_ 


_ 


TO-3 


_ 


BDY37 


140 


15-60 


8 


4 


150 


16 


0.2 


_ 


_ 


TO-3 


_ 


MJ15001 


140 


25 


4 


2 


200 


15 


2 


_ 


_ 


TO-204MA 


MJ15002 


2N6259 


150 


10 min. 


16 


4 


250 


16 


0.2 


- 


- 


TO-3 


- 


IC = 12 to 20 A, fj = 2.5 to 25 MHz 






2N6470 


40 


5 min. 


15 


4 


125 


15 


5 


_ 


_ 


TO-3 


2N6469 


2N6486 


40 


5 min. 


15 


4 


75 


15 


5 


_ 


_ 


TO-220AB 


2N6489 


2N3055 


60 


20-70 


4 


4 


115 


15 


2.5 


1.9" 


1.5" 


TO-3 


MJ2955 


2N6471 


60 


5 min. 


15 


4 


125 


15 


5 


_ 


_ 


TO-3 


2N6246 


2N6487 


60 


5 min. 


15 


4 


75 


15 


5 


- 


- 


TO-220AB 


2N6490 


2N6472 


80 


5 min. 


15 


4 


125 


15 


5 


_ 


_ 


TO-3 


2N6247 


2N6488 


80 


5 min. 


15 


4 


75 


15 


5 


— 


_ 


TO-220AB 


2N6491 


RCS617 


80 


20-70 


5 


4 


115 


15 


2.5 


1.9" 


1.5" 


TO-3 


RCS618 


2N6674 


300 


8 


10 


2 


175 


15 


15 


0.7 


0.5 


TO-204MA 


_ 


2N6676 


300 


8 


15 


3 


175 


15 


15 


- 


- 


TO-204MA 


- 


RCA9113 


300 


15 min. 


5 


3 


175 


15 


20 


1.03* 


0.75 x 


TO-3/ 
TO-204MA 


- 


RCA9113A 


350 


15 min. 


5 


3 


175 


15 


20 


1.03* 


0.76 x 


TO-3/ 
TO-204MA 


- 


2N6677 


350 


8 


15 


3 


175 


15 


15 


_ 


_ 


TO-204MA 


_ 


2N6675 


400 


8 


10 


2 


175 


15 


15 


0.7 


0.5 


TO-204MA 


_ 


2N6678 


400 


8 


15 


3 


175 


15 


15 


- 


- 


TO-204MA 


- 


RCA9113B 


400 


15 min. 


3 


3 


175 


15 


20 


1.03* 


0.75X 


TO-3/ 
TO-204MA 


- 


IC = 12 to 20 A, fj = 50 to 100 MHz 


2N6479%" 


60 


20-300 


12 


2 


87 


12 


100 


_ 


_ 


Radial" 


_ 


2N6481% 


60 


20-300 


12 


2 


117 


12 


100 


_ 


_ 


Radial 


_ 


2N5039 


75 


20-100 


10 


5 


140 


20 


60 


0.5@ 


0.5 


TO-3 


_ 


2N6480%" 


80 


20-300 


12 


2 


87 


12 


100 


_ 




Radial" 


_ 


2N6482% 


80 


20-300 


12 


2 


117 


12 


100 


- 


- 


Radial 


- 


2N5038 


90 


20-100 


12 


5 


140 


20 


60 


0.5@ 


0.5 


TO-3 




2N6496 


110 


12-100 


8 


2 


140 


15 


60 


0.5@ 


0.5 


TO-3 


- 


IC = 25 to 50 A, fj = 0.2 to 1 MHz 


2N3771 


40 


5 min. 


30 


4 


150 


30 


0.2 


_ 


_ 


TO-3 


_ 


2N5301 


40 


5 


30 


3 


200 


30 


2 


2 @ 


1 


TO-204MA 


_ 


2N5302 


60 


5 


30 


3 


200 


30 


2 


2 @ 


1 


TO-204MA 


_ 


BDY29 


75 


15-60 


15 


2 


220 


30 


0.2 


_ 


_ 


TO-3 


_ 


2N5303 


80 


5 


20 


3 


200 


30 


2 


2 @ 


1 


TO-204MA 


_ 


IC = 25 to 50 A, fj = Z5 to 25 MHz 


2N3264 


60 


20-80 


15 


3 


125 


25 


20 


0.5 


0.5 


Radial 





2N3266 


60 


20-80 


15 


3 


125 


25 


20 


0.5 


0.5 


TO-63 


_ 


2N5885 


60 


4 


25 


4 


200 


25 


4 


0.7@ 


0.8 


TO-204MA 


_ 


2N6326 


60 


6 


30 


4 


200 


30 


3 


0.45 


0.9* 


TO-204MA 


_ 


2N5886 


80 


4 


25 


4 


200 


25 


4 


0.7@ 


0.8 


TO-204MA 


- 


2N6327 


80 


6 


30 


4 


200 


30 


3 


0.45 


0.9* 


TO-204MA 




2N3263 


90 


25-75 


15 


3 


125 


25 


20 


0.5 


0.5 


Radial 


_ 


2N3265 


90 


25-75 


15 


3 


125 


25 


20 


0.5 


0.5 


TO-63 


_ 


2^6546 


300 


6 


10 


2 


175 


15 


6 


1.05 


0.7 


TO-204MA 


- 


IC = 25 to 50 A, fy = 50 to 100 MHz 


2 N 6032 


90 


10-50 


50 


2.6 


140 


50 


50 


1@ 


0.5 


Mod. TO-3 




2N5671 


90 


20-100 


15 


2 


140 


30 


50 


0.5 


0.5 


TO-3 


_ 


2N6033 


120 


10-50 


40 


2 


140 


40 


50 


1@ 


0.5 


Mod. TO-3 


_ 


2N5672 


120 


2a 100 


15 


2 


140 


30 


50 


0.5 


0.5 


TO-3 


_ 


IC>60A,fy=0.4MHz 


















2N5575 


50 


10-40 


60 


4 


300 


80 


0.4 


15 


15 


Mod. TO-3 




2N5578 


70 


10-40 


40 


3 


300 


60 


0.4 


15 


15 


Mod. TO-3 


- 



12 



^Measured at same current level as hp^ unless otherwise indicated 
♦Check availability in Europe, the Middle East, and Africa. 



•At l C : 
'Atl C : 



6A 
2A 



*At l C = 4A 
* v CER< su s> 



*t FF 
*Atl C < 



@t r 
10 A % Radiation hardened 



Power Transistor Selection Charts 



P-N-P SILICON POWER TRANSISTORS 


















Type No. 


v CEO' sus ) 


Current Gain 


pt 


"c 


«T 


Sw. Times* 


Package 


n-p-n 


"FE 


«c 


V C E 


*0N I 


tf 












(Max.) 


(Max.) 




I 






Complement 




V 




A 


V 


W 


A 


MHz 


MS 






IC=-0.15to- 


-1 A, fy = 0.2 to 1 MHz 


















BFT28 


-100 


20min. 


-0.010 


-10 


5 


_1 


25 


- 


- 


TO-39 


- 


BFT19 


-150 


20 min. 


-0.050 


-10 


5 


—1 


25 


— 


— 


TO-39 


— 


BFT28A 


-150 


20min. 


-0.010 


-10 


5 


—1 


25 


— 


— 


TO-39 


— 


RCS880* 


-150 


2a 150 


-0.050 


-10 


7.5 


— 1 


15 


— 


— 


TO-39 


— 


2N5415 


-200 


30-150 


-0.050 


-10 


10 


-1 


15 


- 


- 


TO-39 


2N3440 


BFT28B 


-200 


20 min. 


-0.010 


-10 


5 


-1 


25 


- 


- 


TO-39 


- 


BFT19A 


-250 


20 min. 


-0.050 


-10 


5 


—1 


25 


— 


— 


TO-39 


— 


BFT28C 


-250 


20 min. 


-0.010 


-10 


5 


—1 


25 


— 


— 


TO-39 


— 


RC881* 


-250 


20 min. 


-0.035 


-10 


7.5 


—1 


15 


— 


— 


TO-39 


— 


2N5416 


-300 


30-120 


-0.050 


-10 


10 


-1 


15 


- 


- 


TO-39 


2N3439 


RCS882* 


-300 


20 min. 


-0.035 


-10 


7.5 


-1 


15 


- 


- 


TO-39 


- 


BFT19B 


-350 


20 min. 


-0.050 


-10 


5 


-1 


25 


- 


- 


TO-39 


— 


IC=-0.15to- 


-1 A, fj= 50 to 100 MHz 


















41503 


-30 


20 min. 


-0.150 


-10 


7 


_1 


60 


— 


— 


TO-39 


41502 


2N4037 


-40 


50-250 


-0.150 


-10 


7 


—1 


60 


— 


— 


TO-39 


2N3053 


2N4036 


-65 


40-140 


-0.150 


-10 


7 


—1 


60 


0.11 


0.1 


TO-39 


2N2102 


2N4314 


-65 


50-250 


-0.150 


-10 


7 


-1 


60 


- 


- 


TO-39 


— 


IC= -1.5 to - 


2 A, fj= 2.5 to 25 MHz 


















BUX66 


-150 


10-150 


-1 


-5 


35 


-2 


20 


6 61 


0.6 


TO-66 


BUX67 


2N6211 


-225 


10-100 


-1 


-2.8 


20 


-2 


20 


6 @ 


0.6 


TO-66 


2N3584 


BUX66A 


-250 


10-150 


-1 


-5 


35 


-2 


20 


6 @ 


0.6 


TO-66 


BUX67A 


2N6212 


-300 


10-100 


-1 


-3.2 


20 


-2 


20 


6 @ 


0.6 


TO-66 


2N3585 


BUX66B 


-300 


10-150 


-1 


-5 


35 


-2 


20 


0.6 @ 


0.6 


TO-66 


BUX67B 


2N6213 


-350 


10-100 


-1 


-4 


20 


-2 


20 


6 @ 


0.6 


TO-66 


2N3585 


BUX66C 


-350 


10-150 


-1 


-5 


35 


-2 


20 


6 @ 


0.6 


TO-66 


BUX67C 


2N6214 


-400 


10-100 


-1 


-5 


20 


-2 


20 


0.6 @ 


0.6 


TO-66 


- 


IC=-1.5to- 


2 A, fj = 50 to 100 MHz 


















RCP704 


-30 


50 min. 


-0.5 


-4 


10 


-2 


50 


0.1 


1* 


TO-202AB 


RCP705 


RCP706 


-30 


20 min. 


-0.5 


-4 


10 


-2 


50 


0.1 


1* 


TO-202AB 


RCP707 


RCP700A 


-40 


50-250 


-0.5 


-4 


10 


-2 


50 


0.1 


1* 


TO-202AB 


RCP701A 


RCP702A 


-40 


30-150 


-0.5 


-4 


10 


-2 


50 


0.1 


1* 


TO-202AB 


RCP703A 


2N5323 


-50 


40-250 


-0.5 


-4 


10 


-2 


50 


0.1 


1* 


TO-39 


2N5321 


2N6181 


-50 


40-250 


-0.5 


-4 


25 


-2 


50 


0.1 


1* 


Plastic TO-5 


2N6179 


RCP700B 


-60 


50-250 


-0.5 


-4 


10 


-2 


50 


0.1 


1* 


TO-202AB 


RCP701B 


RCP702B 


-60 


30-150 


-0.5 


-4 


10 


-2 


50 


0.1 


1* 


TO-202AB 


RCP703B 


RCP704B 


-60 


50 min. 


-0.5 


-4 


10 


-2 


50 


0.1 


1* 


TO-202AB 


RCP705B 


RCP706B 


-60 


20 min. 


-0.5 


-4 


10 


-2 


50 


0.1 


1* 


TO-202AB 


RCP707B 


2 N 5322 


-75 


30-130 


-0.5 


-4 


10 


-2 


50 


0.1 


1* 


TO-39 


2N5320 


2N6180 


-75 


30-150 


-0.5 


-4 


25 


-2 


50 


0.1 


1* 


Plastic TO-5 


2N6178 


RCP700C 


-80 


50-250 


-0.5 


-4 


10 


-2 


50 


0.1 


1* 


TO-202AB 


RCP701C 


RCP702C 


-80 


30-150 


-0.5 


-4 


10 


-2 


50 


0.1 


1* 


TO-202AB 


RCP703C 


RCA1A04* 


-95* 


50 min. 


-0.1 


-4 


10 


-2 


50 


- 


- 


TO-39 


RCA1A03 


RCP700D 


-100 


50-250 


-0.5 


-4 


10 


-2 


50 


0.1 


1* 


TO-202AB 


RCP701D 


RCP702D 


-100 


30-150 


-0.5 


-4 


10 


-2 


50 


0.1 


1* 


TO-202AB 


RCP703D 


IC=-2.5to- 


5 A, fy = 2.5 to 25 MHz 


















2N4915 


80 


7 


5 


2 


87.5 


5 


4 


— 


— 


TO-204MA 


2N4906 


2N4914 


60 


7 


5 


2 


87.5 


5 


4 


— 


— 


TO-204MA 


2N4905 


2N4913 


40 


7 


5 


2 


87.5 


5 


4 


— 


— 


TO-204MA 


2N4904 


2N4904 


-40 


25 


-2.5 


-2 


87.5 


-5 


4 


— 


— 


TO-204MA 


2N4913 


2N5783 


-40 


4 min. 


-3.2 


-2 


10 


-3.5 


8 


0.5O 


2.5*0 


TO-39 


2N5786 


RCA30* 


-40 


15-150 


-1 


-4 


30 


-3 


3 


0.2 


1* 


TO-220AB 


RCA29 


RCA32* 


-40 


25 min. 


-1 


-4 


40 


-5 


3 


0.2 


1* 


TO-220AB 


RCA31 


RCS30* 


-40 


15-150 


-1 


-4 


30 


-3 


3 


0.2 


1* 


TO-66 


RCS29 


RCS32* 


-40 


25 min. 


-1 


-4 


40 


-5 


3 


0.2 


1* 


TO-66 


RCS31 


TIP30 


-40 


15-150 


-1 


-4 


30 


-3 


3 


0.2 


1* 


TO-220AB 


TIP29 


TIP32 


-40 


25 min. 


-1 


-4 


40 


-5 


3 


0.2 


1* 


TO-220AB 


TIP31 


BD240 


-45 


15 min. 


-1 


-4 


30 


-4 


3 


— 


— 


TO-220AB 


B0239 


BD242 


-45 


25 min. 


-1 


-4 


40 


-5 


3 


— 


— 


TO-220AB 


BD241 


2N5782 


-50 


4 min. 


-3.2 


-4 


10 


-3.5 


8 


0.5O 


2.5*0 


TO-39 


2N5785 


2 N 4905 


-60 


25 


-2.5 


-2 


87.5 


-5 


4 


- 


- 


TO-204MA 


2N4914 


BD240A 


-60 


15 min. 


-1 


-4 


30 


-4 


3 


_ 


_ 


TO-220AB 


BD239A 


BD242A 


-60 


10 min. 


-3 


-4 


40 


-5 


3 


— 


— 


TO-220AB 


BD241A 


RCA30A* 


-60 


15-150 


-1 


-4 


30 


-5 


3 


0.2 


1* 


TO-220AB 


RCA29A 


RCA32A* 


-60 


25 min. 


-1 


-4 


40 


-5 


3 


0.2 


1* 


TO-220AB 


RCA31A 


RCS30A* 


-60 


15-150 


-1 


-4 


30 


-3 


3 


0.2 


1* 


TO-66 


RCS29A 



^Measured at same current level as hpg unless otherwise indicated 
♦Check availability in Europe, the Middle East, and Africa. 



* V CER< SUS > 
OAt l c = 1A 



*tOFF 



13 



Power Transistor Selection Charts 



P-N-P SILICON POWER TRANSISTORS (Cont'd) 



14 





Type No. 


VcEO< sus ) 


Current Gain 


PT 


ic 


*T 


Sw. Times* 


Package 


n-p-n 






hFE 


"c 


VCE 


tON 


tf 
















(Max.) 


(Max.) 










Complement 








V 




A 


V 


W 


A 


MHz 


MS 










IC = -2.5 to -5 A, fj = 2.5 to 25 MHz (cont'd) 








RCS32A* 


-60 


25 min. 


-1 


-4 


40 


-5 


3 


0.2 


1* 


TO-66 


RCS31A 






TIP30A 


-60 


15-150 


-1 


-4 


30 


-3 


3 


0.2 


1* 


TO-220AB 


TIP29A 






TIP32A 


-60 


25 min. 


-1 


-4 


40 


-5 


3 


0.2 


1* 


TO-220AB 


TIP31A 






2N5781 


-65 


20-100 


-1 


-2 


10 


-3.5 


8 


0.5 


2.5* 


TO-39 


2N5784 






2N4906 


-80 


25 


-2.5 


-2 


87.5 


-5 


4 


- 


- 


TO-204MA 


2N4915 






BD240B 


-80 


15 min. 


-1 


-4 


30 


-4 


3 


_ 


_ 


TO-220AB 


BD239B 






RD242B 


-80 


25 min. 


-1 


-4 


40 


-5 


3 


— 


— 


TO-220AB 


BD241B 






RCA30B* 


-80 


15-150 


-1 


-4 


30 


-3 


3 


0.2 


1* 


TO-220AB 


RCA29B 






RCA32B* 


-80 


25 min. 


-1 


-4 


40 


-5 


3 


0.2 


1* 


TO-220AB 


RCA31B 






RCS30B* 


-80 


15-150 


-1 


-4 


30 


-3 


3 


0.2 


1* 


TO-220AB 


RCS29B 






RCS32B* 


-80 


25 min. 


-1 


-4 


40 


-5 


3 


0.2 


1* 


TO-66 


RCS31B 






TIP30B 


-80 


15-150 


-1 


-4 


30 


-3 


3 


0.2 


1* 


TO-220AB 


TIP29B 






TIP32B 


-80 


25 min. 


-1 


-4 


40 


-5 


3 


0.2 


1* 


TO-220AB 


TIP31B 






2N6467 


-100 


5 min. 


-4 


-4 


40 


-4 


-5 


— 


— 


TO-66 


2N6465 






2N6475 


-100 


2 min. 


-2.5 


-4 


40 


-4 


10 


- 


- 


TO-220AB 


2N6473 






BD240C 


-100 


15 min. 


-1 


-4 


30 


-4 


3 


_ 


_ 


TO-220AB 


BD239C 






BD242C 


-100 


10 min. 


-3 


-4 


40 


-5 


-3 


— 


— 


TO-220AB 


BD241C 






RCA30C* 


-100 


15-150 


-1 


-4 


30 


-3 


3 


0.2 


1* 


TO-220AB 


RCA29C 






RCA32C* 


-100 


25 min. 


-1 


-4 


40 


-5 


3 


0.2 


1* 


TO-220AB 


RCA31C 






RCS30C* 


-100 


15-150 


-1 


-4 


30 


-3 


3 


0.2 


1* 


TO-66 


RCS29C 






RCS32C 


-100 


25 min. 


-1 


-4 


40 


-5 


3 


0.2 


1* 


TO-66 


RCS31C 






TIP30C 


-100 


15-150 


-1 


-4 


30 


-3 


3 


0.2 


1* 


TO-220AB 


TIP29C 






TIP32C 


-100 


25 min. 


-1 


-4 


40 


-5 


3 


0.2 


1* 


TO-220AB 


TIP32C 






2 N 6468 


-120 


5 min. 


-4 


-4 


40 


-4 


5 


— 


— 


TO-66 


2N6466 






2N6476 


-120 


2 min. 


-4 


-2.5 


40 


-4 


10 


- 


- 


TO-220AB 


2N6474 






IC=-6to-10A,fT=2. 


5 to 25 MHz 




















41501 


-25 


25 min. 


-1 


-4 


40 


-7 


10 


— 


_ 


TO-220AB 


41500 






2N6110 


-30 


2.3 min. 


-7 


-4 


40 


-7 


10 


— 


_ 


TO-220AA 


2N6289 






2N6111 


-30 


2.3 min. 


-7 


-4 


40 


-7 


10 


— 


_ 


TO-220AB 


2N6288 






2N5956 


-40 


5 min. 


-6 


-4 


40 


-6 


5 


— 


_ 


TO-66 


2N6374 






RCA42* 


-40 


15-150 


-3 


-4 


65 


-7 


3 


0.3 - 


0.7** 


TO-220AB 


RCA41 






BD244 


-45 


15 min. 


-3 


-4 


65 


-7 


3 


_ 


_ 


TO-220AB 


BD243 






BD277 


-45 


30-1 50 


-1.75 


-2 


70 


-7 


10 


— 


_ 


TO-220AB 


_ 






2N6108 


-50 


2.3 min. 


-7 


-4 


40 


-7 


10 


— 


_ 


TO-220AA 


2N6291 






2N6109 


-50 


2.3 min. 


-7 


-4 


40 


-7 


10 


— 


_ 


TO-220AB 


2N6290 






2N5955 


-60 


5 min. 


-6 


-4 


40 


-6 


5 


- 


- 


TO-66 


2N6373 






2N5875 


-60 


4 


10 


4 


150 


10 


20 


_ 


_ 


TO-204MA 


_ 






BD244A 


-60 


15 min. 


-3 


-4 


65 


-7 


3 


— 


— 


TO-220AB 


BD243A 






RCA42A* 


-60 


15-150 


-3 


-4 


65 


-7 


3 


0.3* 


0.7*» 


TO-220AB 


RCA41A 






2N6106 


-70 


2.3 min. 


-7 


-4 


40 


-7 


10 


— 


— 


TO-220AA 


2N6293 






2N6107 


-70 


2.3 min. 


-7 


-4 


40 


-7 


10 


- 


- 


TO-220AB 


2N6292 






2N5954 


-80 


5 min. 


-6 


-4 


40 


-6 


5 


_ 


_ 


TO-66 


2N6372 






2N5876 


-80 


4 


10 


4 


150 


10 


20 


— 


— 


TO-204MA 


_ 






BD244B 


-80 


15 min. 


-3 


-4 


65 


-7 


3 


— 


_ 


TO-220AB 


BD243B 






RCA42B* 


-80 


15-150 


-3 


-4 


65 


-7 


3 


0.3 - 


0.7 *• 


TO-220AB 


RCA41B 






2N6248 


-100 


5 min. 


-10 


-4 


125 


-10 


10 


- 


- 


TO-3 


- 






BD244C 


-100 


15 min. 


-3 


-4 


65 


-7 


3 


_ 


_ 


TO-220AB 


BD243C 






RCA42C* 


-100 


15-150 


-3 


-4 


65 


-7 


3 


0.3* 


0.7* # 


TO-220AB 


RCA41C 






IC=-12to-20A,fT=2 


I to 25 MHz 




















2N6469 


-40 


5 min. 


-15 


-4 


125 


-15 


5 


_ 


_ 


TO-3 


2N6470 






2 N 6489 


-40 


5 min. 


-15 


-4 


75 


-15 


5 


— 


_ 


TO-220AB 


2N6486 






2 N 6594 


-40 


5-100 


-5 


-4 


100 


-12 


2.5 


1.9" 


1.5" 


TO-3 


2N6594 






2 N 5879 


-60 


4 


15 


4 


160 


15 


4 


— 


_ 


TO-204MA 


2N5881 






2 N 6246 


-60 


5 min. 


-15 


-4 


125 


-15 


5 


- 


- 


TO-3 


2N6471 






2 N 6490 


-60 


5 min. 


-15 


-4 


75 


-15 


5 


_ 


_ 


TO-220AB 


2N6487 






BDX18 


-60 


20 


-4 


-4 


115 


-15 


4 


— 


_ 


TO-204MA 


2N3055 






MJ2955 


-60 


20-70 


-4 


-4 


115 


-15 


2.5 


1.9" 


1.5" 


TO-3 


2N3055 






2N6247 


-80 


5 min. 


-15 


-4 


125 


-15 


5 


— 


_ 


TO-3 


2N6472 






2N6491 


-80 


5 min. 


-15 


-4 


75 


-15 


5 


- 


- 


TO-220AB 


2N6488 






RCS618 


-80 


20-70 


-5 


-4 


115 


-15 


25 


1.9" 


1.5" 


TO-3 


RCS617 






2 N 5880 


-80 


4 


15 


4 


160 


15 


4 


— 


_ 


TO-204MA 


2N5882 






RCA9116E 


-100 


10 


-7.5 


-2 


200 


-20 


2 


— 


— 


TO-204MA 


RCA8638E 






RCA9116D 


-120 


10 


-10 


-2 


200 


-20 


2 


— 


— 


TO-204MA 


RCA8638D 






2 N 6609 


-140 


15 


-8 


-4 


150 


-16 


2 


- 


- 


TO-204MA 


RCA3773 






MJ15004 


-140 


10 


-10 


-2 


250 


-20 


2 


_ 


_ 


TO-204MA 


MJ15003 






MJ15002 


-140 


25 


4 


2 


200 


-15 


2 


— 


— 


TO-204MA 


MJ 15001 




RCA9116C 


-140 


10 


-10 


-2 


200 


-20 


2 


— 


— 


TO-204MA 


RCA8638C 




1 


RCS618 


-80 


20 


-5 


-4 


115 


-15 


2.5 


— 


— 


TO-204MA 


RCS617 




^Measured at same current leve 


as hfE unless otherwise ir 


idicated 


•At l C = 


6A « 


\ *to 


FF "At 


IC = 2A 






*Check availability in Europe, t 


he Middle East, and Africa 


. 















Power Transistor Selection Charts 



N-P-N MONOLITHIC DARLINGTON TRANSISTORS 





Vceo(sus) 


Current Gain 


T 4 


ic 






hpE 


ic 


VCE 


Type No. 










(Max.) 


(Max.) 


Package 


p-n-p 




V 




A 


V 


W 


A 




Complement 


IC (Max.) »4A, f UNITY GAIN * 20 MHz for a " tVP" 












RCS683 


40 


1000 min. 


2 


3 


10 


4 


TO-39 


— 


RCS683A 


60 


1000 min. 


2 


3 


10 


4 


TO-39 


— 


RCS683B 


80 


1000 min. 


2 


3 


10 


4 


TO-39 


— 


IC (Max.) - 8 A, fuNITY GAIN " 20 MHz for all types 


2N6055 


60 


750-18,000 


4 


3 


100 


8 


TO-3 


- 


2N6300 


60 


100 


8 


3 


75 


8 


TO-213MA 


— 


RCA 120* 


60 


1000 min. 


3 


3 


65 


8 


TO-220AB 


RCA125 


TIP120 


60 


1000 min. 


3 


3 


65 


8 


TO-220AB 


TIP125 


RCA 1000 


60 


1000 min. 


3 


3 


90 


8 


TO-3 


- 


2N6056 


80 


750-18,000 


4 


3 


100 


8 


TO-3 


_ 


2N6301 


80 


100 


8 


3 


75 


8 


TO-213MA 


— 


2N6530 


80 


1000-10,000 


5 


3 


65 


8 


TO-220AB 


— 


2N6534 


80 


1000-10,000 


5 


3 


36 


8 


TO-66 


_ 


RCA121* 


80 


1000 min. 


3 


3 


65 


8 


TO-220AB 


RCA126 


RCA 1001 


80 


1000 min. 


3 


3 


90 


8 


TO-3 


_ 


TIP121* 


80 


1000 min. 


3 


3 


65 


8 


TO-220AB 


TIP126 


2N6531 


100 


500-10,000 


3 


3 


65 


8 


TO-220AB 


— 


2N6532 


100 


1000-10,000 


5 


3 


65 


8 


TO-220AB 


— 


2N6536 


100 


500-10,000 


3 


3 


36 


8 


TO-66 


- 


2N6536 


100 


1000-10,000 


5 


3 


36 


8 


TO-66 


_ 


RCA 122* 


100 


1000 min. 


3 


3 


65 


8 


TO-220AB 


— 


TIP122 


100 


1000 min. 


3 


3 


65 


8 


TO-220AB 


TIP127 


2N6533 


120 


1000-10,000 


3 


3 


65 


8 


TO-220AB 


— 


2N6537 


120 


1000-10,000 


3 


3 


36 


8 


TO-66 


- 


IC (Max.) - 1 


A, f UNITY GAIN * 20 MHz for all types 




2N63S3 


40 


1000-20,000 


5 


3 


100 


10 


TO-3 


RCA8350 


2N6386 


40 


1000-10,000 


3 


3 


65 


10 


TO-220AB 


RCA8203 


BDX33 


45 


750 min. 


4 


3 


70 


10 


TO-220AB 


BDX34 


BDX83 


45 


1000 min. 


5 


3 


125 


10 


TO-3 


_ 


2N6384 


60 


1000-20,000 


5 


3 


100 


10 


TO-3 


RCA8350A 


2N6387 


60 


1000-20,000 


5 


3 


65 


10 


TO-220AB 


RCA8203A 


BDX33A 


60 


750 min. 


4 


3 


70 


10 


TO-220AB 


BDX34A 


BDX83A 


60 


1000 min. 


5 


3 


125 


10 


TO-3 


— 


2N6385 


80 


1000-20,000 


5 


3 


100 


10 


TO-3 


RCA8350B 


2N6388 


80 


1000-20,000 


5 


3 


65 


10 


TO-220AB 


RCA8203B 


BDX33B 


80 


750 min. 


3 


3 


70 


10 


TO-220AB 


RDX34B 


BDX83B 


80 


1000 min. 


5 


3 


125 


10 


TO-3 


— 


BDX33C 


100 


750 min. 


3 


3 


70 


10 


TO-220AB 


BDX34C 


BDX83C 


100 


1000 min. 


5 


3 


125 


10 


TO-3 


_ 


BDX33D 


120 


750 min. 


3 


3 


70 


10 


TO-220AB 


- 



P-N-P MONOLITHIC DARLINGTON TRANSISTORS 





vceo(m») 


Current Gain 


,PT 


ic 






hpE 


ic 


V C E 


Type No. 










(Max.) 


(Max.) 


Package 


n-p-n 




V 




A 


V 


W 


A 




Complement 


IC - -8 A, f UNITY GAIN " 20 MHz for all types 




RCA820'3 


-40 


106646,606 


-3 


-3 


66 


-8 


TO-220AB 


2N6386 


TIP125 


-60 


1000 mm. 


-3 


-3 


65 


-8 


TO-220AB 


TIP120 


RCA 125* 


-60 


1000 min. 


-3 


-3 


65 


-8 


TO-220AB 


RCA120 


TIP126 


-80 


1000 min. 


-3 


-3 


65 


-8 


TO-220AB 


TIP121 


RCA 126* 


-80 


1000 min. 


-3 


-3 


65 


-8 


TO-220AB 


RCA121 


TIP127 


-100 


1000 min. 


-3 


-3 


66 


-8 


TO-220AB 


TIP122 



♦Check availability in Europe, the Middle East, and Africa 



15 



Power Transistor Selection Charts 



P-N-P MONOLITHIC DARLINGTON TRANSISTORS 


(cont'd) 










Type No. 


VcEO< sus ) 
V 


Current Gain 


PT 

(Max.) 

W 


•c 

(Max.) 
A 


Package 


n-p-n 
Complement 


hFE 


"C 
A 


VCE 
V 


IC (Max.) - 10 A, fUNITY GAIN = 20 MHz for all types 










2 N 6648 

2N6666 

RCA8350 

BDX34 

2N6649 

2N6667 

BDX34A 

RCA8203A 

RCA8350A 

2N6650 

2 N 6668 

BDX34B 

RCA8203B 

RCA8350B 

BDX34C 


-40 
-40 
-40 
-45 
-60 

-60 
-60 
-60 
-60 
-80 

-80 
-80 
-80 
-80 
-100 


1000,20,000 

1000 
1000-20,000 

750 min. 
1000-20,000 

1000 

750 min. 

1000-20,000 

1000-20,000 

1000-20,000 

1000 

750 min. 

1000-10,000 

1000-20,000 

750 min. 


-3 
-3 
-5 
-4 
-3 

-5 
-4 
-5 
-5 
-3 

-5 
-3 
-5 
-5 
-3 


-3 
-3 
-5 
-3 
-3 

-3 
-3 
-3 
-3 
-3 

-3 
-3 
-3 
-3 
-3 


70 
65 
70 
70 
70 

65 
70 
65 
70 
70 

65 
70 
65 
70 
70 


-10 
-8 
-10 
-10 
-10 

-10 
-10 
-10 
-10 
-10 

-10 
-10 
-10 
-10 
-10 


TO-204MA 

TO-220AB 

TO-3 

TO-220AB 

TO-204MA 

TO-220AB 

TO-220AB 

TO-220AB 

TO-3 

TO-204MA 

TO-220AB 

TO-220AB 

TO-220AB 

TO-3 

TO-220AB 


2N6383 
2N6386 
2N6383 
BDX33 
2N6384 

2N6387 

BDX33A 

2N6387 

2N6384 

2N6385 

2N6388 
BOX33B 
2N6388 
2N6385 
BDX33C 



16 



Transistors for Audio-Amplifier Applications 



RCA 
Types 


NPN 

or 
PNP 


Package 


H FE 


'C' V CE 


V CER 


P T 


Full Complementary Output Darlington Pairs 



2N6385 


NPN 


TO-3 


1000 


5A/3V 


80V 


100W 


2N6650 


PNP 


TO-3 


1000 


-5A/3V 


-80 V 


70W 


BDX33 


NPN 


TO-220 


750 


4A/3V 


100 V 


70W 


BDX34 


PNP 


TO-220 


750 


^*A/-3V 


-100V 


70W 


RCA1C15 


PNP 


TO-220 


1000 


5A/3V 


80V 


65 W 


RCA1C16 


NPN 


TO-220 


1000 


-5A/-3V 


-80V 


65 W 


RCA900 


PNP 


TO-3 


1000 


-5A/-3V 


-60V 


90W 


RCA1000 


NPN 


TO-3 


1000 


5A/3V 


60 V 


90W 


TA9117 


PNP 


TO-3 


750 


-10A/-3V 


-100V 


160W 


TA9118 


NPN 


TO-3 


750 


10A/3V 


100V 


160W 


Full Complementary Output Transistor Pairs 


2N3055 


NPN 


TO-3 


20 


4A/4V 


70V 


115W 


BDX18 


PNP 


TO-3 


20 


-4A/-4V 


-70V 


115W 


2N6222 


NPN 


TO-220 


30 


3A/4V 


80 V 


40W 


2N6107 


PNP 


TO-220 


30 


-3A/-4V 


-80 V 


40W 


2N6488 


NPN 


TO-220 


20 


5A/4V 


85 


75W 


2N6491 


PNP 


TO-220 


20 


-5A/-4V 


-85 V 


75W 


BD239-243 


NPN 


TO-220 


15 


3A/4V 


100 V 


70W 


BD240-244 


PNP 


TO-220 


15 


-3A/-4V 


-100V 


70W 


RCA1A05 


PNP 


TO-39 


50 


-0.15A/-4V 


-75V 


7W 


RCA1A06 


NPN 


TO-39 


50 


0.15A/4V 


75V 


5W 


RCA1C05 


NPN 


TO-220AB 


20 


3A/4V 


50V 


40 W 


RCA1 C06 


PNP 


TO-220 A B 


20 


-3A/-4V 


-50V 


40W 


RCA1 C07 


NPN 


TO-220 


20 


4A/4V 


65 


75W 


RCA1 C08 


PNP 


TO-220 


20 


-4A/4V 


-65 


75W 


RCA1C10 


NPN 


TO-220 


50 


1.5A/4V 


40 


40W 


RCA1C11 


PNP 


TO-220 


50 


-1.5A/-4V 


-40 


40W 


RCP700 


NPN 


TO-202 


50 


0.5A/4V 


100V 


10W 


RCP701 


PNP 


TO-202 


50 


-0.5A/4V 


-100V 


10W 


RCS617 


NPN 


TO-3 


20 


5A/4V 


85V 


115W 


RCS618 


PNP 


TO-3 


20 


-5A/4V 


-85 V 


115W 


TA8638 


NPN 


TO-3 


15 


8A/4V 


MOV 


200W 


TA9116 


PNP 


TO-3 


15 


-8A/4V 


-140V 


200W 


Quasi Complementary Output Transistors 


2N3055 


NPN 


TO-3 


20 


4A/4V 


70V 


115W 


2N3055 
(Hometaxia 


, NPN 


TO-3 


20 


5A/4V 


80 V 


150W 


2N3442 


NPN 


TO-3 


20 


3A/2V 


150V 


150W 


2N3772 


NPN 


TO-3 


15 


10A/4V 


70V 


250W 


2N3773 


NPN 


TO-3 


15 


8A/4V 


160V 


250W 


2N5298 


NPN 


TO-220 


20 


5A/4V 


75V 


75W 


2N5496 


NPN 


TO-220 


20 


3.5A/4V 


70V 


36W 


2N6103 


NPN 


TO-3 


20 


5A/4V 


75V 


75W 


2N6292 


NPN 


TO-220 


30 


2.5A/4V 


80V 


40W 


2 N 6488 


NPN 


TO-220 


20 


5A/4V 


90V 


75W 


2N6510 


NPN 


TO-3 


10 


4A/3V 


300 V 


120W 


BUX18 


NPN 


TO-3 


10 


4A/3V 


375V 


120W 





NPN 












RCA 
Types 


or 
PNP 


Package 


H FE 


' C ' V CE 


V CER 


P T 


Quasi Complementary Output Transistors 


(Cont'd) 


RCA1 A03 


NPN 


TO-39 


70 


0.3A/4V 


95V 


10W 


RCA1A04 


PNP 


TO-39 


70 


-0.3A/-4V 


-95 V 


10W 


RCA1A05 


PNP 


TO-39 


50 


-0.15A/-4V 


-75V 


7W 


RCA1A06 


NPN 


TO-39 


50 


0.15A/4V 


75V 


5W 


RCA1B01 


NPN 


TO-3 


20 


4A/4V 


95V 


115W 


RCA1B04 


NPN 


TO-3 


15 


2A/5V 


200V 


150W 


RCA1B05 


NPN 


TO-3 


15 


2A/5V 


250V 


150W 


RCA1B06 


NPN 


TO-3 


10 


4A/4V 


100V 


150W 


RCA1B09 


NPN 


TO-3 


40 


2A/5V 


250V 


150W 


RCA1C03 


NPN 


TO-220 


50 


1A/4V 


100V 


40W 


RCA1C04 


PNP 


TO-220 


50 


-1 A/-4V 


-100V 


40W 


RCA1C09 


NPN 


TO-220 


20 


4A/4V 


65 V 


75W 


RCA1C12 


NPN 


TO-220 


40 


1A/2V 


120V 


40 W 


RCA1C13 


PNP 


TO-220 


40 


-1A/2V 


-120V 


40W 


RCA1C14 


NPN TO-220 

nentary Driver 


20 


3A/4V 


40 V 


50W 


Compler 


Pairs/Predrivers 






2N2102 


NPN 


TO-39 


25 


0.1A/5V 


100V 


5W 


2 N 3440 


NPN 


TO-39 


40 


20 mA/10V 


400V 


10W 


2N4036 


PNP 


TO-39 


50 


0.15A/10V 


65 V 


7W 


2N5320 


NPN 


TO-39 


40 


0.5A/4V 


90V 


10W - 


2N5322 


PNP 


TO-39 


40 


-0.5A/-4V 


-90 V 


10W 


2N5415 


PNP 


TO-39 


20 


-50m A/-10V -300V 


10W 


BD239-243 


NPN 


TO-220 


15 


3A/4V 


100V 


70W 


BD240-244 


PNP 


TO-220 


15 


-3A/-4V 


-100V 


70W 


RCA1A01 


NPN 


TO-39 


40 


0.01 A/4V 


70V 


5W 


RCA1A08 


PNP 


TO-39 


30 


-0.1A/-10V 


-50V 


7W 


RCA1A09 


NPN 


TO-39 


20 


0.01 A/10V 


175V 


10W 


RCA1A10 


PNP 


TO-39 


40 


-0.01A/-10V-175V 


10W 


RCA1A15 


NPN 


TO-39 


20 


0.01A/10V 


100 V 


10W 


RCA1A16 


PNP 


TO-39 


40 


-0.01A/-10V-100V 


10W 


RCA1E02 


NPN 


TO-66 


30 


0.3A/2V 


175V 


35W 


RCA1E03 


PNP 


TO-66 


30 


-0.3A/-2V 


-175V 


35W 


RCP131 


NPN 


TO-202 


50 


50m A/1 0V 


350V 


10W 


RCP700 


NPN 


TO-202 


50 


0.5A/4V 


100 V 


10W 


RCP701 


PNP 


TO-202 


50 


-0.5A/4V 


-100V 


10W 


Protection Circuit Types 


RCA1A18 


NPN 


TO-39 


40 


0.01 A/4V 


10V 


5W 


RCA1 A19 


PNP 


TO-39 


40 


-0.01A/-4V 


-10V 


7W 


Input Device Types 



RCA1A02 PNP TO-39 

RCA1A07 NPN TO-39 

RCA1A11 NPN TO-39 

RCA1A17 NPN TO-39 



30 -0.1A/-10V -50V 7W 

50 0.01A/10V 40V 5W 

40 0.01A/10V 175V 10W 

40 0.01 A/4V 90V 5W 



17 



Power Hybrid Comparison Chart 



Multi-Purpose High-Power Operational Amplifiers 

HC2000H* 




RESISTANCE VALUES IN OHMS 
CAPACITANCE VALUES IN MICROFARADS 
. UNLESS OTHERWISE SPECIFIED 
BASE PLATE /MOUNTING FLANGE: SEE DIMENSIONAL OUTLINE 



92CS-I7574R2 



Schematic diagram of type HC2000H operational amplifier. 
HC2000H* - Applications 

Motor control, magnetic-deflection amplifiers, solenoid 
driver, low-frequency oscillator amplifier, voltage regu- 
lators, constant current source, inverting and non-inverting 
unity-gain amplifier. 



HC2500 




"ELECTRICALLY ISOLATED FROM INTERNAL CIRCUITRY 



Schematic diagram of type HC2500 operational amplifier. 

HC2500 - Applications 

Low-distortion, high-power amplifiers for audio and other 
end uses where internal overload protection is not required. 



Ratings: 



Ratings and Features for HC2000H* and HC2500 

Features: 



SUPPLY VOLTAGE: 
Between leads 1 and 10 75 V 

OUTPUT CURRENT (peak) 7 A 

OPERATING TEMPERATURE RANGE . . . -55 to +150°C 



Bandwidth: 30 kHz at 60 W 

High power output: up to 100 W (rms) 

Single or split power supply: 

30 to 75 V single, ±15 to ±37.5 V split 



COMPARISON CHART 



TYPE 


IM DlST. 
@2Q0 mW 


OUTPUT 

PROTECTION 

NETWORK 


OPERATING 
MODE 


FREQUENCY 
COMPENSATION 


COMMUTATING 
DIODES 


HC2000H* 


0.6% 


YES 


CLASS B 


LC FILTER 
ON OUTPUT 


YES 


HC2500 


0.06% 


NO 


CLASS AB 


CAPACITOR ON 
SIGNAL TERMINALS 


NO 



Socket for both types: RCA part DG-293A, or 

Electronic Essentials, 210 Elizabeth St., New York, N.Y. 10012, Part No. MS5-1000 

* HC2000H also available to MIL-spec as HC2000H/1, 2, 3, 4. 

(see data bulletin file no. 789, orpg. 404 in the "High- Reliability Devices" DATABOOK SSD-230.) 



18. 



RF Power Transistor Selection Charts 







Collector- 




Min. Output 


Data 


Type 


Package 


Supply 


Frequency 


Power (W) 


Sheet 


Type 


Voltage (V) 


(MHz) 


or Noise 


File 










Figure (dB) 


No. 


2N2857 


TO-72 


6-15(V CE ) 


450 


NF = 4.5 


61 


2N2876 


TO-60 


28 


50 


10 


32 


2N3229 


TO-60 


50 


50 


15 


50 


2N3375 


TO-60 


28 


400 


3 


386 


2N3478 


TO-72 


6-15(V CE ) 


200 


NF =4.5 


77 


2N3553 


TO-39 


28 


175 


2.5 


386 


2N3600 


TO-72 


6-15(V C E> 


200 


NF = 4.5 


83 


2N3632 


TO-60 


28 


175 


13.5 


386 


2N3733 


TO-60 


28 


400 


10 


72 


2N3839 


TO-72 


6-15(V CE ) 


450 


NF = 3.9 


229 


2N3866 


TO-39 


28 


400 


1 


80 


2N3866A 


TO-39 


28 


800 


1 


- 


2N4012 


TO-60 


28 


1000 

(tripler) 


2.5 


90 


2N4427 


TO-39 


12 


175 


1 


228 


2N4440 


TO-60 


28 


400 


5 


217 


2N4932 


TO-60 


13.5 


88 


12 


249 


2N4933 


TO-60 


24 


88 


20 


249 


2N5070 


TO-60 


28 


30 


25 (PEP) 


268 


2N5071 


TO-60 


24 


76 


24 


269 


2N5090 


TO-60 


28 


400 


1.2 


270 


2N5102 


TO-60 


24 


136 


15 


279 


2N5109 


TO-39 


15 


200 


NF = 3 


281 


2N5179 


TO-72 


6(V CE ) 


200 


NF = 4.5 


288 


2N5180 


TO-72 


10<V CE ) 


200 


NF = 4.5 


289 


2N5913 


TO-39 


12 


470 


2 


423 


2N6670 


TO-202AB 


12.5 


27 


4 


1091 


40280 


TO-39 


13.5 


175 


1 


68 


40290 


TO-39 


12.5 


135 


2 


70 


40291 


TO-60 


12.5 


135 


2 


70 


40292 


TO-60 


12.5 


135 


6 


70 


40340 


TO-60 


13.5 


50 


25 


74 


40341 


TO-60 


24 


50 


30 


74 


40606 


Premium 


high-reliabilit 


/ version of 2 


N3632 


600 


40608 


TO-39 


15 


200 


NF = 3 


356 


40894 


TO-72 


12 


200 


rf amp. 


548 


40895 


TO-72 


12 


200 


mixer 


548 


40896 


TO-72 


12 


200 


Osc. 


548 


40897 


TO-72 


12 


10.7 


if amp. 


548 


40936 


TO-60 


28 


30 


20 (PEP) 


551 


40964 


TO-39 


12 


470 


0.4 


581 


40965 


TO-39 


12 


470 


05 


581 


41024 


TO-39 


28 


1000 


1 


658 



Type 


Operating 

Frequency 

(MHz) 


Min. 
Output 
Power 

(W) 


Collector- 
Supply 
Voltage 
(V) 


Min. 
Power 
Gain 


For VHF and UHF Mobile-Radio 


Applications 




2N4427 


175 


1 


12 


10 


2N5913 


175 


1.75 


12.5 


12.4 


40280 


175 


1 


13.5 


9 


40964 


470 


0.4 


12 


6 


40965 


470 


0.5 


12 


7 


For Aircraft-Radio Applications 


40290 


118-136 


2 


12.5 


6 


40291 


118-136 


2 


12.5 


6 


40292 


118-136 


6 


12.5 


4.8 


2N5102 


118-136 


15 


24 


4 


For Single-Sideband Applications 






and For Military Communication! 






40936 


30 


20 (PEP) 


28 


13 


2N5070 


30 


25 (PEP) 


28 


13 


2N5071 


76 


24 


24 


9 


2N3866 


400 


1 


28 


10 


For CB-Radio Applications 


2N6670 


27 


4 


12.5 


10 


For CATV/MATV and Small-Signal 




Low-Noise Applications 






2N3478 


200 


4.5 


6.15 


11.5 


2N5179 


200 


4.5 


6 


15 


2N5109 


200 


3 


15 


11 


40608 


200 


3 


15 


11 


40894 


200 


3 


12 


15 


40895 


200 


- 


12 


15 


40896 


200 


- 


12 


15 


2N3600 


200 


4.5 


15 


17 


40897 


200 


- 


12 


18 


2N2857 


450 


4.5 


6 


12.5 


2N3839 


450 


3.9 


6 


12.5 


For Microwave Applications 


41024 


1000 I 5 


I 28 


I 5 




Minimum Output Pow 


er = 1 W 






Collector Efficiency = 


35% 





.19 



Triac Product Matrix 



RCA 

Triacs 


TO-205MA/TO-5 
Modified 


Mod. TO-205MA/TO-5 With 
Heat Radiator 


TO-202AB 
VERSATAB 


•a 

•a 
c 

CO 

co 


'T(RMS) 


2.5A 


2.5A 


2.5A 


2.5A 


2.5A 


2.5A 


2.5A 


2.5A 


2.5A 


2.5A 


l TSM (60 Hz) 


25A 


25A 


25A 


25A 


25A 


25A 


25A 


25A 


25A 


25A 


VdROM(V) 50 


T2300F 


T2301F 


T2302F 


T2303F 


T2310F 


T2311F 


T2312F 


T2313F 


T2320F 


T2327F 


100 


T2300A 


T2301A 


T2302A 


2N5754 


T2310A 


T2311A 


T2312A 


T2313A 


T2320A 


T2327A 


200 


T2300B 


T2301B 


T2302B 


2N5755 


T2310B 


T2311B 


T2312B 


T2313B 


T2320B 


T2327B 


300 


















T2320C 


T2327C 


400 


T2300D 


T2310D 


T2302D 


2N5756 


T2310D 


T2311D 


T2312D 


T2313D 


T2320D 


T2327D 


500 


















T2320E 


T2327E 


600 








2N5757 








T2313M 






lGT< m A) l+, III- 


3 


4 


10 


25 


3 


4 


10 


25 


3 


5 


I", III+ 


3 


4 


10 


40 


3 


4 


10 


40 


3 


5 


V GT (V) All Modes 


2.2 


2.2 


2.2 


2.2 


2.2 


2.2 


2.2 


2.2 


2.2 


2.2 


V 

<o _ 

O CO 

<o 
N 


VDROM(V) 100 








T2306A 








T2316A 






200 








T2306B 








T2316B 






400 








T2306D 








T2316D 






lGT< mA ) l + , lll + 








45 








45 






Vgt< v > l + . Ill" 1 " 








1.5 








1.5 






c 

I- 2 

6 S2 
o V 

«8 


'T(RMS) 






0.5A 


0.5 A 














VDROM(V) 200 






T2304B 


T2305B 














400 






T2304D 


T2305D 














lGT< mA > l + , III- 






10 


25 














I", 111+ 






10 


40 














V G -r(V) All Modes 






2.2 


2.2 















RCA 
Triacs 


TO-202AB 
VERSATAB 


TO-213MA/ 
TO-66 


rO-213MA/ 

TO-66 
With Heat 
Radiator 


TO-220AB 
VERS AW ATT 


"O 

CD 

■o 
c 

CO 

*■« 

CO 


!t(RMS) 


2.5A 


2.5A 


6A 


15A 


6A 


6A 


6A 


8A 


8A 


ISOWATT* 
8A 


l TSM (60 Hz) 


25A 


25A 


100 A 


100A 


100A 


60A 


80A 


100A 


100A 


100A 


VDROM(V> 50 


T2322F 


T2323F 










T2801F 


T2800F 


T2802F 


T2850F 


100 


T2322A 


T2323A 










T2801A 


T2800A 


T2802A 


T2850A 


200 


T2322B 


T2323B 


T2700B 


T4700B 


T2710B 


T2500B 


T2801B 


T2800B 


T2802B 


T2850B 


300 


T2322C 


T2323C 










T2801C 


T2800C 


T2802C 




400 


T2322D 


T2323D 


T2700D 


T4700D 


T2710D 


T2500D 


T2801D 


T2800D 


T2802D 


T2850D 


500 


T2322E 


T2323E 










T2801E 


T2800E 


T2802E 


T2850E 


600 
















T2800M 


T2802M 




lGT< mA ) l + , III- 


10 


25 


25 


30 


25 


25 


80 


25 


50 


25 


I-, III+ 


10 


40 


40 


80 


40 


60 


- 


60 


- 


60 


vgt< v > A " Modes 


2.2 


2.2 


2.2 


2.5 


2.2 


2.5 


4.0 A 


2.5 


2.5 A 


2.5 


a> 
" _ 

O CO 
N 


VDROM(V) 100 






















200 






T2706B 


T4706B 


T2716B 


T2506B 






T2806B 


T2856B 


400 






T2706D 


T4706D 


T2716D 


T2506D 






T2806D 


T2856D 


lGT< mA ) l + , lll + 






45 


45 


45 


45 






45 


45 


Vgt< v > l + , III + 






1.5 


1.5 


1.5 


1.5 






1.5 


1.5 



•ISOWATT — Mounting tab electrically isolated from electrodes 



only 



20 



Triac Product Matrix 



RCA 
Triacs 


TO-220AB 
VERSAWATT 


Press- Fit 
(TO-203AA) 


Stud 


■o 

■o 
c 

CO 

3> 


'T(RMS) 


8A 


12A 


12A 


12A 


12A 




10A 


15A 




10 


15 


l TSM (60Hz) 


100 A 


120A 


120A 


120A 


100 A 




100 A 


100A 




100A 


100 A 


v D rom(v) 


50 














T4101F 


T4100F 




T4111F 


T4110F 


100 
























200 


T2851B 


2N6342A 


2N6346A 


SC149B 


TIC236B 




2N5567 


2N5571 




2N5569 


2N5573 


300 


T2851C 






















400 


T2851D 


2N6343A 


2N6347A 


SC149D 


TIC236D 




2N5568 


2N5572 




2N5570 


2N5574 


500 


T2851E 






SC149E 






T4101E 


T4100E 




T4111E 


T4110E 


600 




2N6344A 


2 N 6348 A 


SC149M 






T4101M 


T4100M 




T4111M 


T4110M 


lGT< mA ) 


l+, III- 


80 


50 


50 


50 


50 




25 


50 




25 


50 


I", 111+ 


- 


- 


75 


50* 


50* 




40 


80 




40 


80 


Vqt(V) 


All Modes 


3 


2 


2.5 


2.5 


2.5 




2.5 


2.5 




2.5 


2.5 


o a 

a* 

O CO 

0) 

N 


Vdrom(V) 


200 














T4107B 


T4106B 




T4117B 


T4116B 


400 














T4107D 


T4106D 




T4117D 


T4116D 


600 














T4107M 


T4106M 








lQT< mA ) 


I+.III+ 














45 


45 




45 


45 


V GT (V) 


All Modes 














1.5 


1.5 




1.5 


1.5 


6 2 
o » 

«8 


'T(RMS) 












6A 


10A 


15A 


6A 


10A 


15A 


Vdrom(v) 


200 












T4105B 


T4104B 


T4103B 


T4115B 


T4114B 


T4113B 


400 












T4105D 


T4104D 


T4103D 


T4115D 


T4114D 


T4113D 


iGj(mA) 

v G t<v) 


l + . 111- 












50 


50 


50 


50 


50 


50 


I", 111+ 
All Modes 












80 


80 


80 


80 


80 


80 












2.5 


2.5 


2.5 


2.5 


2.5 


2.5 



only 



RCA 
Triacs 


Isolated 
Stud 


With flex, leads, 
encap. on iso- 
lated-stud 


Press- Fit 

Isolated on 
TO-3 flange 


With flex, leads, 
encap., isolated 
on TO-3 flange 


TO-220AB 
VERSAWATT 


■o 
(5 

■o 
c 
is 

55 


'T(RMS) 


10A 


15A 


10A 


15A 


10A 


15A 


10A 


15A 


15A 


15A 


I TS m(60 Hz) 


100A 


100 A 


100 A 


100A 


100A 


100A 


100A 


100A 


150A 


150A 


v D rom(V) 


50 


T4121F 


T4120F 


T4131F 


T4130F 


T4141F 


T4140F 


T4151F 


T4150F 






100 






















200 


T4121B 


T4120B 


T4131B 


T4130B 


t4141B 


T4140B 


T4151B 


T4150B 


MAC 15-4 


MAC15A-4 


400 


T4121D 


T4120D 


T4131D 


T4130D 


T4141D 


T4140D 


T4151D 


T4150D 


MAC 15-6 


MAC15A-6 


500 


T4121E 


T4120E 


T4131E 


T4130E 


T4141E 


T4140E 


T4151E 


T4150E 






600 


T4121M 


T4120M 


T4131M 


T413*0M 


T4141M 


T4140M 


T4151M 


T4150M 


MAC 15-8 


MAC15A-8 


lGT (m A) 


1+ III- 


25 


50 


25 


50 


25 


50 


25 


50 


50 


50 


I-, 111+ 


40 


80 


40 


80 


40 


80 


40 


80 


- 


75 


Vqt(V) 


All Modes 


2.5 


2.5 


2.5 


2.5 


2.5 


2.5 


2.5 


2.5 


2 


2.5 


o a 

O CO 
V 

N 


v D rom<v) 

lGT< m A) 


200 


T4127B 


T4126B 


















400 


T4127D 


T4126D 


















600 


T4127M 


T4126M 


















l+, 111+ 


45 


45 


















V G T<V) 


All Modes 


1.5 


1.5 



















21 



Triac Product Matrix 



RCA 
Triacs 


TO-220AB 
VERSAWATT 


Press- Fit 


Stud 


Isolated Stud 


■a 

(0 
T3 

c 
to 

V) 


'T(RMS) 


15A 


16A 


16A 


16A 


30A 


40A 


30A 




40A 


30A 


40A 


l T SM<60Hz) 


150A 


100A 


150A 


150A 


300A 


300A 


300A 




300A 


300A 


300A 


v DR0M<V) 50 






T6000F 


T6001 F 


T6401F 


T6402F 


T6411F 




T6412F 


T6421F 


T6420F 


100 
























200 


SC151B 


TIC246B 


T6000B 


T6001 B 


T6401B 


2N5441 


T6411B 




2N5444 


T6421B 


T6420B 


300 






T6000C 


T6001C 
















400 


SC151D 


TIC246D 


T6000D 


T6001D 


T6401D 


2N5442 


T6411D 




2N5445 


T6421D 


T6420D 


500 


SC151E 




T6000E 


T6001E 


T6401E 


T6402E 


T6411E 




T6412E 


T6421E 


T6420E 


600 


SC151M 




T6000M 


T6001M 


T6401M 


2N5443 


T6411M 




2N5446 


T6421M 


T6420M 


lGT< mA ' l + , III" 


50 


50 


50 


80 


50 


50 


50 




50 


50 


50 


I", III + 


50* 


50* 


80 


- 


80 


80 


80 




80 


80 


80 


V GT (V) All Modes 


2.5 


2.5 


2.5 


3 


2.5 


2.5 


2.5 




2.5 


2.5 


2.5 


0) 

o> 

CO 

o a 

O c/} 

0) 

N 


VDROM<V) 200 






T6006B 




T6407B 


T6406B 


T6417B 




T6416B 


T6427B 


T6426B 


300 






T6006C 


















400 






T6006D 




T6407O 


T6406D 


T6417D 




T6416D 


T6427D 


T6426D 


500 






T6006E 


















600 






T6006M 




T6407M 


T6406M 


T6417M 




T6416M 




T6426M 


l GT (mA) l + , lll + 






45 




45 


45 


45 




45 


45 


45 


V GT (V) All Modes 






1.5 




1.5 


1.5 


1.5 




1.5 


1.5 


1.5 


c 

N O 

6 2 
O a> 


'T(RMS) 










25A 


40A 


25A 


25A 


40A 






VdROM(V) 200 










T6405B 


T6404B 


T6415B 


2N5806 


T6414B 






400 










T6405D 


T6404D 


T6415D 


2N5807 


T6414D 






'500 
















2 N 5808 








600 
















2N5809 








lGT< mA > l + , III- 










80 


80 


80 


80 


80 






I-, lll + 










120 


120 


120 


150" 


120 






V GT (V) All Modes 










3 


3 


3 


2.5 A 


3 







•1 mode only 



k 4 V for 111+ mode 



'80 mA for 1 mode 



RCA 
Triacs 


With flex, leads, 
encap. on iso- 
lated-stud 


Press-Fit 

Isolated on 
TO-3 flange 


With flex, leads, 
encap., isolated 
on TO-3 flange 


Overmold 
Stud 


-a 

ID 

•a 
c 
to 

V) 


'T(RMS) 


30A 


40A 


30A 


40A 


30A 


40A 


60A 


80A 


l TSM (60Hz) 


300A 


300A 


300A 


300A 


300A 


300A 


600A 


850A 


v DROM< v > 


50 


T6431 F 




T6441F 


T6440F 


T6451F 


T6450F 


T8411F 


T8410F 


100 


















200 


T6431B 


T6430B 


T6441B 


T6440B 


T6451B 


T6450B 


T8411B 


T8410B 


300 


















400 


T6431D 


T6430D 


T6441D 


T6440D 


T6451D 


T6450D 


T8411D 


T8410D 


500 


T6431E 




T6441E 


T6440E 


T6451E 


T6450E 


T8411E 


T8410E 


600 


T6431M 


T6430M 


T6441M 


T6440M 


T6451M 


T6450M 


T8411M 


T8410M 


iGTdmA) 


l + , III- 


50 


50 


50 


50 


50 


50 


75 


75 


I-, III + 


80 


80 


80 


80 


80 


80 


150 


150 


v G t(v) 


All Modes 


2.5 


2.5 


2.5 


2.5 


2.5 


2.5 


2.8 


2.5 



22 



SCR Product Matrix 



RCA 
SCR's 


TO-8 


TO-202AB 
VERSATAB 


TO-220AB 
VERSAWATT 


TO-213MA/ 
TO-66 


'T(RMS) 


2A 


4A 


4A 


4A 


4A 


4A 


4A 


4A 


4A 


4A 


5A 


l-TSM (60 Hz) 


60A 


20A 


15A 


30A 


20A 


20A 


20A 


35A 


35A 


35A 


60A 


v DROM 15 




C106Q 


C107Q 


C108Q 


S106Q 


S107Q 


S108Q 


S2060Q 


S2061Q 


S2062Q 




VRROM<V> 25 
























30 




C106Y 


C107Y 


C108Y 


S106Y 


S107Y 


S108Y 


S2060Y 


S2061Y 


S2062Y 




50 




C106F 


C107F 


C108F 


S106F 


S107F 


S108F 


S2060F 


S2061F 


S2062F 




100 




C106Aj 


C107A 


C108A 


S106A 


S107A 


S108A 


S2060A 


S2061A 


S2062A 




150 
























200 


2N3528 


C106B 


C107B 


C108B 


S106B 


S107B 


S108B 


S2060B 


S2061B 


S2062B 


2N3228 


250 
























300 
















S2060C 


S2061C 


S2062C 




400 


2N3529 


C106D 


C107D 


C108D 


S106D 


S107D 


S108D 


S2060D 


S2061D 


S2062D 


2N3525 


500 




C106E 


C107E 


C108E 


S106E 


S107E 


S108E 


S2060E 


S2061E 


S2062E 




600 


2N4102 


C106M 


C107M 


C108M 


S106M 


S107M 


S108M 


S2060M 


S2061M 


S2062M 


2N4101 


lGT< mA ) 


15 


0.2 


0.5 


0.2 


0.2 


0.5 


2 


0.2 


0.5 


2 


15 


Vqt(V) 


2 


0.8 


0.8 


0.8 


0.8 


0.8 


0.8 


0.8 


0.8 


0.8 


2 



RCA 
SCR's 


TO-213MA/TO-66 


TO-213MA/ 

TO-66 With 

Heat Rad. 


TO-220AB 
VERSAWATT 


l-r(RMS) 


FTO* 
5A 


FTO* 
5A 


FTO* 
5A 


FTO* 
5A 


FTO* 
5A 


FTO* 
5A 


5A 


FTO* 
5A 


FTO* 
5A 


FTO* 
5A 


FTO* 
5A 


l T $5 M (60 Hz) 


80A 


80A 


80A 


75A(lp M ) 


80A 


80A 


80A 


80A 


80A 


80A 


80A 


v DR0M 100 






S3704A 










S3714A 








VRROM(V) 200 




S3700B 


S3704B 








S2710B 


S3714B 


S5800B 


S5801B 


S5802B 


250 
























300 


















S5800C 


S5801C 


S5802C 


400 




S3700D 


S3704D 








S2710D 


S3714D 


S5800O 


S5801D 


S5802D 


500 


S3706E 
















S5800E 


S5801E 


S5802E 


600 


S3705M 


S3700M 


S3704M 


S3701M 






S2710M 


S3714M 


S5800M 


S5801M 


S5802M 


700 






S3704S 




S3702S 






S3714S 








750 












S3703SF 












lGT( mA > 


30 


40 


40 


35 


45 


40 


15 


40 


50 


50 


50 


Vqt(V) 


4 


3.5 


3.5 


4 


4 


4 


2 


3.5 


2.5 


2.5 


2.5 



RCA 
SCR's 


Low-Pro- 
file Mod. 
TO-205MA/ 
TO-5 


TO-205MA/ 
TO-5 with 
Heat Rad. 


TO-205MA/ 
TO-5 with 

Heat 
Spreader 


TO-220AB 
VERSAWATT 


TO-204MA/ 
TO-3 


Press- Fit 
TO-203AA 
















Ir(RMS) 


7A 


3.3A 


7A 


8A 


10A 


12 


16 


12.5 


20A 


35A 


l TSM (60 Hz) 


100A 


100A 


100A 


100A 


100A 


125 


160 


200A 


200A 


350A 


v DROM 50 








S122F 


S2800F 


2N6394 


2N6400 








vrrom<v> 100 








S122A 


S2800A 


2N6395 


2N6401 


2N3668 


S6200A 


2N3870 


150 






















200 


S2600B 


S2610B 


S2620B 


S122B 


S2800B 


2N6396 


2 N 6402 


2N3669 


S6200B 


2N3871 


250 






















300 








S122C 


S2800C 


S6000C 


S6100C 








400 


S2600D 


S2610D 


S2620D 


S122D 


S2800D 


2N6397 


2N6403 


2N3670 


S6200D 


2N3872 


500 








S122E 


S2800E 


S6000E 


S6100E 








600 


S2600M 


S2610M 


S2620M 


S122M 


S2800M 


2N6398 


2N6406 


2N4103 


S6200M 


2N3873 


700 








S122S 


S2800S 


S6000S 


S6100S 








iQT(mA) 


15 


15 


15 


25 


15 


30 


30 


40 


15 


40 


Vqt(V) 


1.5 


1.5 


1.5 


1.5 


1.5 


1.5 


1.5 


2 


2 


2 



•FTO - Fast Turn-Off. 



♦Check availability in Europe, the Middle East, and Africa. 



23 



SCR Product Matrix 



RCA 
SCR's 


Stud 


Isolated 
Stud 


With flex, leads, 
encap. on iso- 
lated stud 


Press-Fit 

Isolated on 
TO-3 flange 


With flex, leads, 
encap., isolated 
on TO-3 flange 


'T(RMS) 


20A 


35A 


20A 


35A 


20A 


35A 


20A 


35A 


20A 


35A 


l TSM (60Hz> 


200A 


350A 


200A 


350A 


200A 


350A 


200A 


350A 


200A 


350A 


VDROM 10 ° 


S6210A 


2N3896 


S6220A 


S6420A 


S6230A 


S6430A 


S6240A 


S6440A 


S6250A 


S6450A 


VRROM<V) 200 


S6210B 


2N3897 


S6220B 


S6420B 


S6230B 


S6430B 


S6240B 


S6440B 


S6250B 


S6450B 


400 


S6210D 


2N3898 


S6220O 


S6420D 


S6230D 


S6430D 


S6240D 


S6440D 


S6250D 


S6450D 


600 


S6210M 


2N3899 


S6220M 


S6420M 


S6230M 


S6430M 


S6240M 


S6440M 


S6250M 


S6450M 


\Qj{rr\A) 


15 


40 


15 


40 


15 


40 


15 


40 


15 


40 


V QT <V) 


2 


2 


2 


2 


2 


2 


2 


2 


2 


2 



RCA 
SCR's 


TO-208MA/TO-48 


Overmold 
Stud 


Overmold 

Isolated 

Stud 


't(rms) 


16A 


25A 


Pulse 

Modulator 

35A 


FTO* 
35A 


FTO # 
35A 


FTO* 
40A" 


75A 


75A 


l T SM<60 Hz) 


125A 


150A 


150A 


180 A 


180A 


400A 


750A 


750A 


v DROM 15 






















VRROM<V) 25 


2N1842A 


2N681 


















30 






















50 


2N1843A 


2N682 






2N3654 












100 


2N1844A 


2N683 




2N3650 


2N3655 




S8612A 


S8613A 


S8622A 


S8623A 


150 


2N1845A 


2N684 


















200 


2N1846A 


2N685 




2N3651 


2N3656 


S7310B 


S8612B 


S8613B 


S8622B 


S8623B 


250 


2N1847A 


2N686 


















300 


2N1848A 


2N687 




2N3652 


2N3657 


S7310C 










400 


2N1849A 


2N688 




2 N 3653 


2N3658 


S7310D 


S86120 


S8613D 


S8622D 


S8623D 


500 


2N1850A 


2N689 








S7310E 










600 




2N690 


S6493M 


S7410M 


S7412M 


S7310M 


S8612M 


S8613M 


S8622M 


S8623M 


iQT(mA) 


45 


25 


80 


180 


180 


80 


200 


200 


200 


200 


Vqt(V) 


3.5 


3 


2 


3 


2 


3 


3 


3 


3 


3 



•FTO- Fast Turn-Off 



■ASCR (Asymmetrical Silicon Controlled Rectifiers) 



RCA 
SCR's 


Overmold 
Stud 


Overmold 

Isolated 

Stud 


l-r(RMS) 


100 A 


100A 


"TSM<60Hz) 


1000 A 


1000 A 


v DROM 15 










VRROM(V) 25 










30 










50 










100 


S8610A 


S8611A 


S8620A 


S8621A 


150 










200 


S8610B 


S8611B 


S8620B 


S8621B 


250 










300 










400. 


S8610D 


S8611D 


S8620D 


S86210 


500 










600 


S8610M 


S8611M 


S8620M 


S8621M 


iQX(mA) 


200 


200 


200 


200 


V G T<V> 


3 


3 


3 


3 



ITR Product Matrix 

For Horizontal-Deflection Circuits 



RCA 
ITR's* 


TO-220AB 
VERSAWATT 




Trace 


Commutating 
(Retrace) 


Trace 


Commutating 
(Retrace) 


l T (RMS) 


8A 


8A 


8A 


8A 


"TSM<60 Hz) 


90A 


90A 


90A 


90A 


VDROM(V) 300 










400 










450 






S3902DF 




500 










550 










600 




S3901M 






650 


S3900MF 


S3901MF 




S3903MF 


700 


S3900S 


S3901S 






750 


S3900SF 








iQX(mA) 


30 


45 






V GT (V) 


4 


4 







'Integrated Thyristor/Rectifiers 



24. 



GTO, Diac, and Rectifier Product Matrices 



GTO Product Matrix 



RCA 
GTO's* 


TO-220AB 
VERSAWATT 


l-r(DC) 


15A 


15A 


l TS M<60Hz) 


85A 


85A 


Vdrxm(v) 100 


G4000A 


G4001A 


200 


G4000B 


G4001B 


400 


G4000D 


G4001D 


tgq 


25/us 


25ms 



Diac Product Matrix 



For Triggering Devices 



GTO - Gate-Turn-Off SCR 



RCA 
Diacs 


DO-204AC/DO-15 




D3202Y 


D3202U 


■pk 


2A 


2A 


±v (BO) 


29 min. 35 max. V 


25 min. 40 max. V 


l + V(BO)l-l-V(BO)l 


±3 max. V 


±3 max. V 


|AV±| 


9 min. V 


9 min. V 



Rectifier 

Standard Types 



Product Matrix 



RCA 
Rectifiers 


DO-203AA/ 
DO-4 


DO-203AB/ 
DO-5 


'0 


6A 


12A 


20A 


40A 


•fsm 


160A 


240A 


350A 


800A 


V RRM (V) 50 


1N1341B 


1N1199A 


1N248C 


1N1183A 


100 


1N1342B 


1N1200A 


1N249C 


1N1184A 


200 


1N1344B 


1N1202A 


1N250C 


1N1186A 


300 


1N1345B 


1N1203A 


1N1195A 


1N1187A 


400 


1N1346B 


1N1204A 


1N1196A 


1N1188A 


500 


1N1347B 


1N1205A 


1N1197A 


1N1189A 


600 


1N1348B 


1N1206A 


1N1198A 


1N1190A 



Fast- Recovery Types 



RCA 
Rectifier 


DO-203AA/ 
DO-4 


DO-203AB/ 
DO-5 


'o 


6A 


6A* 


12A 


12A* 


20A 


20A* 


30A 


40A 


•fsm 


75A 


125A 


150A 


250A 


225A 


300A 


300A 


700A 


Vrrm(V) 50 


1N3879 


D2406F 


1N3889 


D2412F 


1N3899 


D2520F 


1N3909 


D2540F 


100 


1N3880 


D2406A 


1N3890 


D2412A 


1N3900 


D2520A 


1N3910 


D2540A 


200 


1N3881 


D2406B 


1N3891 


D2412B 


1N3901 


D2520B 


1N3911 


D2540B 


300 


1N3882 


D2406C 


1N3892 


D2412C 


1N3902 


D2520C 


1N3912 




400 


1N3883 


D2406D 


1N3893 


D2412D 


1N3903 


D2520D 


1N3913 


D2540D 


500 


















600 




D2406M 




D2412M 




D2520M 




D2540M 


Reverse 
Recovery 


















Time t rr Typ. 


- 


200 ns 


- 


200 ns 


- 


200 ns 


- 


200 ns 


Max. 


200 ns 


350 ns 


200 ns 


350 ns 


200 ns 


350 ns 


200 ns 


350 ns 



♦Check availability in Europe, the Middle East, and Africa. 



.25 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 



This guide provides a quick reference to more than 2300 industry power devices (power transistors, 
silicon controlled rectifiers, and triacs) and their nearest RCA replacements. The nearest RCA device is 
determined on the basis of electrical similarity as well as package similarity. 



POWER TRANSISTORS 



Industry 




RCA 




Industry 




RCA 




Industry 




RCA 




Type 


Package Type 


Package 


Type 


Package Type 


Package 


Type 


Package Type 


Package 


2N656 


TO-5 


2N2102 


TO-39 


2N3022 


TO-3 


2N4902 


TO-3 


2 N 3464 


TO-39 


2N3053 


TO-39 


2N1132 


TO-5 


2N4037 


TO-39 


2N3023 


TO-3 


2N4902 


TO-3 


2N3597 


TO-63 


2N3266 


TO-63 


2N1132A 

2N1420 

2N1507 

2N1565 

2N1565A 

2N1573 


TO-5 
TO-5 
TO-5 
TO-5 
TO-5 
TO-5 


2N4037 

2N1711 

2N1711 

40360 

40360 

40409 


TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39HR 


2N3024 
2N3025 
2N3026 
2N3036 
2N3076 
2N3079 


TO-3 

TO-3 

TO-3 

TO-5 

TO-36 

TO-36 


2N4904 
2N4905 
2N4905 
2N5320 
2N6249 
2N6511 


TO-3 

TO-3 

TO-3 

TO-39 

TO-3 

TO-3 


2 N 3598 
2N3599 
2N3665 
2N3672 
2N3712 


TO-63 

TO-63 

TO-39 

TO-5 

TO-39 


2N3266 

2N3265 

2N1893 

2N699 

2N3440 

BF257 


TO-63 
TO-63 
TO-39 
TO-39 
TO-39 
TO-39 


2N1574 


TO-5 


40409 


TO-39 HR 


2N3080 


TO-36 


2N6670 


TO-3 








2N1613S 


TO-5 


2N1613 


TO-39 


2N3108 


TO-39 


2N2102 


TO-39 


2N3713 


TO-3 


2N3715 
2N3715 
2N3716 


TO-3 
TO-3 
TO-3 


2N1711S 


TO-5 


2N1711 


TO-39 


2N3109 


TO-39 


2N1711 


TO-39 


2N3714 


TO-3 


2N1714 


TO-5 


2N1480 


TO-39 


2N3110 


TO-39 


2N3053 


TO-39 






2N3716 


TO-3 


2N1889 


TO-5 


2N699 


TO-39 


2N3114 


TO-39 


BF257 


TO-39 










2N1893S 


TO-5 


2N1893 


TO-39 


2N3122 


TO-5 


2N5321 


TO-39 


2N3719 


TO-39 


2N5323 


TO-39 


2N1974 


TO-5 


40360 


TO-39 


2N3133 


TO-39 


40634 


TO-39 


2N3720 


TO-39 


2N5322 


TO-39 


2N1975 


TO-5 


40360 


TO-39 


2N3134 


TO-39 


2N4037 


TO-39 


2N3738 


TO-66 


2N3584 


TO-66 


2N1984 


TO-5 


40360 


TO-39 


2N3171 


TO-3 


2N6254 


TO-3 


2N3739 


TO-66 


2N3585 


TO-66 


2N1985 


TO-5 


40360 


TO-39 


2N3172 


TO-3 


2N6246 


TO-3 


2N3740 


TO-66 


2N5955 


TO-66 


2N1986 


TO-5 


2N3053 


TO-39 


2N3173 


TO-3 


2N6247 


TO-3 


2N3741 


TO-66 


2N5954 


TO-66 


2N1987 


TO-5 


2N697 


TO-39 


2N3174 


TO-3 


2 N 6248 


TO-3 


2N3742 


TO-39 


2 N 3439 


TO-39 


2N1990 


TO-5 


BF257 


TO-39 


2N3183 


TO-3 


2N6246 


TO-3 






BF259 


TO-39 


2N1990S 


TO-5 


BF257 


TO-39 


2N3184 


TO-3 


2N6246 


TO-3 


2N3743 


TO-39 


2N5416 


TO-39 


2N2034 


TO-5 


2N5784 


TO-39 


2N3185 


TO-3 


2N6247 


TO-3 






BFT19B 


TO-39 


2N2049 


TO-5 


2N1711 


TO-39 


2N3186 


TO-3 


2N6248 


TO-3 


2N3766 


TO-66 


2N3879 


TO-66 


2N2102S 


TO-5 


2N2102 


TO-39 


2N3195 


TO-3 


2N6246 


TO-3 






2N6373 


TO-66 


2N2192 


TO-5 


2N1711 


TO-39 


2N3196 


TO-3 


2N6246 


TO-3 


2N3767 


TO-66 


2N6372 


TO-66 


2N2193 


TO-39 


2N1613 


TO-39 


2N3197 


TO-3 


2N6247 


TO-3 


2N3774 


TO-5 


2N5783 


TO-39 


2N2194 


TO-39 


2N699 


TO-39 


2N3198 


TO-3 


2N6248 


TO-3 


2N3775 


TO-5 


2N5781 


TO-39 


2N2195 


TO-39 


2N697 


TO-39 


2N3202 


TO-5 


2N5783 


TO-39 


2N3778 


TO-5 


2N5783 


TO-39 


2N2195A 


TO-39 


2N697 


TO-39 


2N3203 


TO-5 


2N5781 


TO-39 


2N3779 


TO-5 


2N5781 


TO-39 


2N2217 
2N2218 


TO-39 
TO-39 


2N697 
2N697 


TO-39 
TO-39 


2N3208 
2N3224 


TO-5 
TO-5 


2N5783 
2N5415 


TO-39 
TO-39 


2N3782 
2N3788 


TO-5 
TO-3 


2N5783 
2 N 5840 


TO-39 
TO-3 


2N2243 


TO-39 


2N1893 


TO-39 


2N3225 


TO-5 


2N5415 


TO-39 


2N3789 


TO-3 


2N3791 


TO-3 


2N2243A 


TO-39 


2N1893 


TO-39 


2N3226 


TO-3 


2N6253 


TO-3 


2N3790 


TO-3 


2N3792 


TO-3 


2N2270S 


TO-39 


2N2270 


TO-39 


2N3233 


TO-3 


2N3442 


TO-3 


2N3795 


TO-5 


2N5415 


TO-39 


2N2297 


TO-39 


2N1613 


TO-39 


2N3234 


TO-3 


2N3055 


TO-3 


2N3863 


TO-3 


2N3055 


TO-3 


2N2297S 


TO-39 


2N1613 


TO-39 






2N6262 


TO-3 


2N3864 


TO-3 


2N3442 


TO-3 


2N2303 


TO-39 


40315 


TO-39 


2N3235 


TO-3 


2N3055 


TO-3 


2N3865 


TO-3 


2N6262 


TO-3 


2N2330 


TO-39 


40814 


TO-39 


2N3236 


TO-3 


2N6254 


TO-3 


2N3902 


TO-3 


2 N 6308 


TO-3 


2N2410 


TO-39 


2N3053 


TO-39 


2N3237 


TO-3 


2N5302 


TO-3 






BUX18C 


TO-3 


2N2537 


TO-39 


40635 


TO-39 


2N3238 


TO-3 


2N5882 


TO-3 


2N3945 


TO-5 


2N2102 


TO-39 


2N2538 


TO-39 


2N1711 


TO-39 


2N3239 


TO-3 


2N5882 


TO-3 






2N2270 


TO-39 


2N2800 


TO-39 


40406 


TO-39 


2N3240 


TO-3 


2N5882 


TO-3 


2N4000 


TO-39 


2N5320 


TO-39 


2N2801 


TO-39 


40815 


TO-39 


2N3244 


TO-39 


2N5323 


TO-39 


2N4002 


TO-63 


2N3265 


TO-63 


2N2846 


TO-39 


2N697 


TO-39 


2N3245 


TO-39 


2N5323 


TO-39 


2N4004 


Radial 


2N3263 


Radial 


2N2848 


TO-39 


2N697 


TO-39 


2N3292 


TO-5 


2N697 


TO-39 


2N4030 


TO-39 


2N4036 


TO-39 


2N2863 


TO-39 


2N5321 


TO-39 


2N3300 


TO-5 


2N1711 


TO-39 


2N4054 


TO-202 


I RCP113C 


TO-202 


2N2864 


TO-39 


2N3053 


TO-39 


2N3418 


TO-39 


2N5320 


TO-39 


2N4055 


TO-202 RCP113B 


TO-202 


2N2868 


TO-39 


2N3053 


TO-39 


2N3444 


TO-39 


2N5321 


TO-39 


2N4056 


TO-202 RCP113B 


TO-202 


2N2951 


TO-39 


41502 


TO-39 


2N3445 


TO-3 


2N6471 


TO-3 


2N4057 


TO-202 RCP113B 


TO-202 


2N2958 


TO-39 


2N697 


TO-39 


2N3446 


TO-3 


2N6472 


TO-3 


2N4070 


TO-3 


2N6306 


TO-3 


2N2959 


TO-39 


2N1711 


TO-39 


2 N 3447 


TO-3 


2N6471 


TO-3 


2N4071 


TO-3 


2N6306 


TO-3 


2N3020 
26 


TO-39 


2N1893 


TO-39 


2 N 3448 


TO-3 


2N6472 


TO-3 











Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 



TRANSISTORS (CONT'D) 



Industry 




RCA 




Industry 




RCA 




Industry 




RCA 




Type 


Package Type 


Package 


Type 


Package Type 


Package 


Type 


Package Type 


Package 


2N4111 


TO-3 


2N4914 


TO-3 


2N5192 


Case 77 


BD241B 


TO-220 


2N5687 


TO-39 


40412 


TO-39 


2N4113 


TO-3 


2N4915 


TO-3 


2N5193 


Case 77 


BD242 


TO-220 


2N5732 


TO-3 


2N5671 


TO-3 


2N4130 


TO-3 


2N3055 


TO-3 


2N5194 


Case 77 


BD242A 


TO-220 


2N5733 


TO-63 


2N3265 


TO-63 


2N4210 


TO-63 


2N3266 


TO-63 


2N5195 


Case 77 


BD242B 


TO-220 


2N5734 


TO-3 


2N5671 


TO-3 


2N4211 


TO-63 


2N3265 


TO-63 


2N5241 


TO-3 


2N6513 


TO-3 


2N5737 


TO-3 


2N6246 


TO-3 


2N4231 


TO-66 


2N6374 


TO-66 






BUX18C 


TO-3 


2N5738 


TO-3 


2N6248 


TO-3 


2N4232 


TO-66 


2N6373 


TO-66 


2N5264 


TO-3 


2N6510 


TO-3 


2N5739 


TO-3 


2N5878 


TO-3 


2N4233 


TO-66 


2N6372 


TO-66 


2N5279 


TO-5 


2N3439 


TO-39 


2N5758 


TO-3 


2N3442 


TO-3 


2N4234 


TO-39 


2N5783 


TO-39 


2N5280 


Flange 


2N4036 


TO-39 FL 






2N6262 


TO-3 


2N4235 


TO-39 


2N5782 


TO-39 


2N5281 


TO-5 


2N5415 


TO-39 


2N5759 


TO-3 


2 N 3442 


TO-3 


2N4236 


TO-39 


2N5781 


TO-39 


2N5282 


TO-5 


2N5416 


TO-39 






2N6262 


TO-3 


2N4237 


TO-39 


2N5786 


TO-39 


2N5294 


TO-220 


2N5294 


TO-220 


2N5760 


TO-3 


2N3442 


TO-3 


2N4238 


TO-39 


2N5785 


TO-39 


2N5296 


TO-220 


2N5298 


TO-220 






2N6262 


TO-3 


2N4239 


TO-39 


2N5784 


TO-39 


2N5298 


TO-220 


2N5298 


TO-220 


2N5861 


TO-39 


2N5321 


TO-39 


2N4387 


TO-66 


2N5956 


TO-66 


2N5305 


TO-3 


BDY29 


TO-3 


2N5864 


TO-39 


40634 


TO-39 


2N4388 


TO-66 


2N5955 


TO-66 


2N5331 


TO-63 


2N3265 


TO-63 


2N5865 


TO-39 


40634 


TO-39 


2N4404 


TO-39 


2N1893 


TO-39 


2N5344 


TO-66 


2N6211 


TO-66 


2N5867 


TO-3 


2N6246 


TO-3 


2N4405 


TO-39 


2N2405 


TO-39 


2N5345 


TO-66 


2N6212 


TO-66 


2N5868 


TO-3 


2N6247 


TO-3 


2N4438 


TO-39 


2N3439 


TO-39 


2N5427 


TO-66 


2N6372 


TO-66 


2N5929 


TO-3 


2N5671 


TO-3 


2N4890 
2N4898 


TO-39 
TO-66 


2N4037 
2N5956 


TO-39 
TO-66 


2N5429 
2N5466 
2N5467 
2N5539 


TO-66 
TO-3 
TO-3 
TO-63 


2N6465 
2N6671 
2N6671 
2N3265 


TO-66 
TO-3 
TO-3 
TO-63 


2N5930 
2N5932 


TO-3 
TO-3 


2N5672 
2N5671 


TO-3 
TO-3 


2N4899 
2N4900 


TO-66 
TO-66 


2N5955 
2N5954 


TO-66 
TO-66 


2N5933 
2N5935 


TO-3 
TO-3 


2N5672 
2N6032 


TO-3 
Mod. 


2N4907 


TO-3 


2N6246 


TO-3 


2N5560 


TO-63 


2N3265 


TO-63 








TO-3 


2N4908 


TO-3 


2N6246 


TO-3 


2N5598 


TO-66 


2N5202 


TO-66 


2N5936 


TO-3 


2N6033 


Mod. 


2N4909 


TO-3 


2 N 6247 


TO-3 


2N5600 


TO-66 


2 N 6500 


TO-66 








TO-3 


2N4910 


TO-66 


2N6260 


TO-66 


2N5602 


TO-66 


2N3879 


TO-66 


2N5966 


TO-63 


2 N 3265 


TO-63 






2N6374 


TO-66 


2N5604 


TO-66 


2 N 6500 


TO-66 


2N5968 


TO-63 


2N3265 


TO-63 


2N4911 


TO-66 


2 N 3054 


TO-66 


2N5606 


TO-66 


2N3879 


TO-66 


2N5970 


TO-3 


2N6472 


TO-3 






2N6373 


TO-66 


2N5608 


TO-66 


2N3879 


TO-66 


2N5971 


TO-3 


2N6472 


TO-3 


2N4912 


TO-66 


2N6261 


TO-66 


2N5610 


TO-66 


2 N 6500 


TO-66 


2N5972 


TO-3 


2N6472 


TO-3 






2N6372 


TO-66 


2N5612 


TO-66 


2 N 6500 


TO-66 


2N5974 


Case 90 


2 N 6489 


TO-220 


2N4918 


Case 77 


BD240 


TO-220 


2N5614 


TO-3 


2N5039 


TO-3 


2N5975 
2N5976 


Case 90 
Case 90 


2N6490 
2N6491 


TO-220 
TO-220 


2N4919 


Case 77 


BD240A 


TO-220 


2N5616 


TO-3 


2N5038 


TO-3 


2N5977 
2N5978 
2N5979 


Case 90 
Case 90 
Case 90 


2N6486 
2 N 6487 
2 N 6488 


TO-220 
TO-220 
TO-220 


2N4920 
2N4921 


Case 77 
Case 77 


BD240B 
BD239 


TO-220 
TO-220 


2N5618 
2N5620 
2N5622 
2N5624 


TO-3 
TO-3 
TO-3 
TO-3 


2 N 5038 
2N6496 
2N5039 
2N5038 


TO-3 
TO-3 
TO-3 
TO-3 


2N4922 


Case 77 


BD239A 


TO-220 


2N5980 


Case 90 


2N6489 


TO-220 


2N4923 


Case 77 


BD239B 


TO-220 


2N5981 


Case 90 


2 N 6490 


TO-220 


2N4926 


TO-39 


2N3440 


TO-39 


2N5626 


TO-3 


2N5038 


TO-3 


2N5982 


Case 90 


2N6491 


TO-220 






BF258 


TO-39 


2N5628 


TO-3 


2 N 6496 


TO-3 


2N5983 


Case 90 


2 N 6486 


TO-220 


2N4927 


TO-39 


2 N 3440 


TO-39 


2N5629 


TO-3 


2N4348 


TO-3 


2 N 5984 


Case 90 


2 N 6487 


TO-220 






BF258 


TO-39 






RCA8638E 


TO-3 


2N5985 


Case 90 


2 N 6488 


TO-220 


2N4928 


TO-39 


BFT28 


TO-39 


2N5630 


TO-3 


2N4348 


TO-3 


2N5986 


Case 90 


2N6489 


TO-220 


2N4929 


TO-39 


BFT28A 


TO-39 






RCA8638D 


TO-3 


2N5987 


Case 90 


2N6490 


TO-220 


2N4930 


TO-39 


2N5415 


TO-39 


2N5631 


TO-3 


RCA3773 


TO-3 


2N5988 


Case 90 


2N6491 


TO-220 






BFT28B 


TO-39 


2N5632 


TO-3 


RCA8638E 


TO-3 


2N5989 


Case 90 


2N6486 


TO-220 


2N4931 


TO-39 


2N5416 


TO-39 


2N5633 


TO-3 


RCA8638D 


TO-3 


2N5990 


Case 90 


2N6487 


TO-220 






BFT28C 


TO-39 


2N5634 


TO-3 


MJ15003 


TO-3 


2N5991 


Case 90 


2N6488 


TO-220 


2N5050 


TO-66 


2N3584 


TO-66 






BDY37 


TO-3 


2N6029 


TO-3 


RCA9116E 


TO-3 


2N5051 


TO-66 


2N3584 


TO-66 


2N5655 


Case 77 


2N6175 


TO-5P 


2N6030 


TO-3 


RCA9116D 


TO-3 


2N5052 


TO-66 


2N3584 


TO-66 


2N5656 


Case 77 


2N6176 


TO-5P 


2N6031 


TO-3 


2N6609 


TO-3 


2N5058 


TO-39 


2N3439 


TO-39 


2N5657 


Case 77 


2N6177 


TO-5P 


2N6034 


Case 77 


2N6666 


TO-220 






BF259 


TO-39 


2N5660 


TO-66 


2N6077 


TO-66 


2N6034 


Case 77 


2N6666 


TO-220 


2N5059 


TO-39 


2N3440 


TO-39 


2N5661 


TO-66 


2N6079 


TO-66 






BDX34 


TO-220 






BF258 


TO-39 


2N5664 


TO-66 


2N6077 


TO-66 


2N6035 


Case 77 


RCA125 


TO-220 


2N5091 


TO-5 


2N5416 


TO-39 


2N5665 


TO-66 


2N6079 


TO-66 






BDX34A 


TO-220 


2N5092 


TO-5 


2N3439 


TO-39 


2N5672 


TO-63 


2N3265 


TO-63 


2N6036 


Case 77 


RCA126 


TO-220 


2N5110 


TO-5 


2N5783 


TO-39 


2N5678 


TO-63 


2N3265 


TO-63 






BDX34B 


TO-220 


2N5157 


TO-3 


2 N 5840 


TO-3 


2N5685 


TO-3 


2N5578 


Mod. 


2N6037 


Case 77 


2N6386 


TO-220 


2N5190 


Case 77 


BD241 


TO-220 








TO-3 






BDX33 


TO-220 


2N5191 


Case 77 


BD241A 


TO-220 


2N5686 


TO-3 


2N5578 


Mod. 
TO-3 


2N6038 


Case 77 


RCA120 
BDX33A 


TO-220 
TO-220 

27 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 
POWER TRANSISTORS (CONT'D) 



Industry 
Type 


RCA 
Package Type 


Package 


Industry 
Type 


RCA 
Package Type 


Package 


Industry 
Type 


RCA 
Package Type 


Package 


2N6039 


Case 77 


RCA121 


TO-220 


2N6300 


TO-66 


2N6534 


TO-66 


2SB531 


TO-3 


2N6247 


TO-3 






BDX33B 


TO-220 


2N6301 


TO-66 


2N6534 


TO-66 


2SB558 


TO-3 


2N6248 


TO-3 


2N6040 


Case 


RCA125 


TO-220 


2N6302 


TO-3 


RCA3773 


TO-3 


2SB595 


TO-220 


2N6475 


TO-220 




199 


BDX34A 


TO-220 


2N6312 


TO-66 


2N6308 


TO-3 


2SB596 


TO-220 


2N6107 


TO-220 


2N6041 


Case 


RCA126 


TO-220 






2N5956 


TO-66 


2SC481 


TO-39 


2N699 


TO-39 




199 


BDX34B 


TO-220 


2N6313 


TO-66 


2N5955 


TO-66 


2SC482 


TO-39 


2N1613 


TO-39 


2N6042 


Case 


RCA126 


TO-220 


2N6314 


TO-66 


2N5954 


TO-66 


2SC485 


TO-39 


2N1893 


TO-39 




199 


BDX34C 


TO-220 


2N6338 


TO-3 


2N5672 


TO-3 


2SC504 


TO-39 


2N1711 


TO-39 


2N6043 


Case 


RCA120 


TO-220 


2N6339 


TO-3 


2N5672 


TO-3 


2SC512 


TO-39 


2N699 


TO-39 




199 


BDX33A 


TO-220 


2N6359 


TO-3 


2N4348 


TO-3 


2SC558 


TO-3 


BUX17A 


TO-3 


2N6044 


Case 


RCA121 


TO-220 


2N6360 


TO-3 


2N4348 


TO-3 


2SC560 


TO-39 


2N2405 


TO-39 




199 


BDX33B 


TO-220 


2N6406 


Case 77 


RCP700B 


TO-202 


2SC779 


TO-66 


2N3584 


TO-66 


2N6045 


Case 


2N6531 


TO-220 


2N6407 


Case 77 


RCP700C 


TO-202 


2SC782 


TO-66 


2N3585 


TO-66 




199 


BDX33C 


TO-220 


2N6408 


Case 77 


RCP701 B 


TO-202 


2SC782A 


TO-66 


2N3585 


TO-66 


2N6046 


TO-63 


2N3266 


TO-63 


2N6409 


Case 77 


RCP701C 


TO-202 


2SC783 


TO-66 


2N3583 


TO-66 


2N6047 


TO-63 


2N3265 


TO-63 


2N6412 


Case 77 


RCP701 A 


TO-202 


2SC789 


TO-220 


2N6292 


TO-220 


2N6248 


TO-63 


2N3265 


TO-63 


2N6413 


Case 77 


RCP701 B 


TO-202 


2SC790 


TO-220 


2N6290 


TO-220 


2N6049 


TO-66 


2N5955 


TO-66 


2N6414 


Case 77 


RCP700A 


TO-202 


2SC792 


TO-3 


BUX16B 


TO-3 


2N6050 


TO-3 


2N6649 


TO-3 


2N6415 


Case 77 


RCP700B 


TO-202 


2SC1173 


TO-220 


2N6288 


TO-220 


2N6051 


TO-3 


2N6650 


TO-3 


2N6415 


Case 77 


RCP701C 


TO-202 


2SC1195 


TO-3 


BUX16 


TO-3 


2N6053 


TO-3 


2N6649 


TO-3 


2N6417 


Case 77 


RCP701 D 


TO-202 


2SC1448A TO-220 


TA8863 


TO-220 


2N6054 


TO-3 


2N6650 


TO-3 


2N6418 


Case 77 


RCP700C 


TO-202 


2SC1576 


TO-3 


BUX16 


TO-3 


2N6057 


TO-3 


2N6384 


TO-3 


2N6419 


Case 77 


RCP700D 


TO-202 


2SD102 


TO-66 


2N6261 


TO-66 


2 N 6058 


TO-3 


2N6385 


TO-3 


2N6420 


TO-66 


2N6211 


TO-66 


2SD129 


TO-66 


2N6372 


TO-66 


2N6062 


TO-63 


2N3265 


TO-63 


2N6421 


TO-66 


2N6212 


TO-66 


2SD130 


TO-66 


2N3054 


TO-66 


2N6063 


TO-63 


2N3265 


TO-63 


2N6422 


TO-66 


2N6212 


TO-66 


2SD234 


TO-220 


RCA3054 


TO-220 


2N6121 


TO-220 


2N6290 


TO-220 


2N6423 


TO-66 


2N6212 


TO-66 


2SD235 


TO-220 


RCA3054 


TO-220 


2N6122 


TO-220 


2N6292 


TO-220 


2N6424 


TO-66 


2N6211 


TO-66 


2SD369 


TO-3 


2N3055 


TO-3 


2N6123 


TO-220 


RCA31 B 


TO-220 


2N6425 


TO-66 


2N6212 


TO-66 


2SD371 


TO-3 


2N6254 


TO-3 






BD241 B 


TO-220 


2N6436 


TO-3 


2N5671 


TO-3 


2SD404C 


TO-220 


2N6288 


TO-220 


2N6124 


TO-220 


2N6109 


TO-220 


2N6437 


TO-3 


2N5672 


TO-3 


2SD424 


TO-3 


2N6262 


TO-3 


2N6125 


TO-220 


2N6107 


TO-220 


2N6438 


TO-3 


2N5672 


TO-3 


2SD425 


TO-3 


2N3442 


TO-3 


2N6126 


TO-220 


RCA32B 


TO-220 


2N6461 


TO-39 


2N3439 


TO-39 


2SD427 


TO-3 


2N4347 


TO-3 






BD242B 


TO-220 


2N6542 


TO-3 


2N6670 


TO-3 


2SD428 


TO-3 


2N4348 


TO-3 


2N6129 
2N6130 
2N6131 
2N6132 


TO-220 
TO-220 
TO-220 
TO-220 


2N6290 
2N6292 
2N6292 
2N6109 


TO-220 
TO-220 
TO-220 
TO-220 


2N6543 
2N6544 
2N6545 
2N6551 


TO-3 
TO-3 
TO-3 
TO-202 


2N6671 
2N6670 
2N6671 
RCP701B 


TO-3 
TO-3 
TO-3 
TO-202 


2SD523 
2SD524 
2SD526 
2SD552 


TO-3 
TO-3 
TO-220 
TO-3 


2N6384 
2N6385 
2N6292 
BUX17A 


TO-3 
TO-3 
TO-220 
TO-3 


2N6133 


TO-220 


2N6107 


TO-220 


2N6552 


TO-202 


RCP701C 


TO-202 


73T2 


TO-39 FL 40392 


TO-39 F 


2N6134 


TO-220 


RCA32B 


TO-220 


2N6553 


TO-202 


RCP701D 


TO-202 


74T2 


TO-39 FL 40628 


TO-39 F 






BD242B 


TO-220 


2N6554 


TO-202 


RCP700B 


TO-202 


100T2 


TO-3 


2N4347 


TO-3 


2N6226 
2N6229 


TO-3 
TO-3 


2N6248 
2N6248 


TO-3 
TO-3 


2N6555 
2N6556 


TO-202 
TO-202 


RCP700C 
RCP700D 


TO-202 
TO-202 


104T2 
108T2 


TO-3 
TO-3 


2N6253 
2N5039 


TO-3 
TO-3 


2N6230 


TO-3 


RCA9116D TO-3 


2N6557 


TO-202 


RCP1 1 1 B 


TO-202 


109T2 


TO-3 


2N6354 


TO-3 


2N6231 


TO-3 


MJ 15004 


TO-3 






RCP113B 


TO-202 


182T2A 


TO-3 


BUX16 


TO-3 


2N6233 


TO-66 


2N3583 


TO-66 


2N6558 


TO-202 


RCP111C 


TO-202 


182T2B 


TO-3 


BUX16 


TO-3 






2N6077 


TO-66 






RCP113C 


TO-202 


182T2C 


TO-3 


BUX16 


TO-3 


2N6234 


TO-66 


2N3584 


TO-66 


2N6559 


TO-202 


RCP111D 


TO-202 


184T2A 


TO-3 


BUX16 


TO-3 






2N6077 


TO-66 






RCP113D 


TO-202 


183T2B 


TO-3 


BUX16 


TO-3 


2N6235 


TO-66 


2N3585 


TO-66 


2N6569 


TO-3 


2N3055 


TO-3 


183T2C 


TO-3 


BUX16 


TO-3 






2N6079 


TO-66 


2SA489 


TO-220 


2N6107 


TO-220 


183T2A 


TO-3 


BUX16 


TO-3 


2N6248 


TO-63 


2N3265 


TO-63 


2SA490 


TO-220 


2N6109 


TO-220 


184T2B 


TO-3 


BUX16 


TO-3 


2N6270 


TO-3 


2N5671 


TO-3 


2SA503 


TO-39 


2N4314 


TO-39 


184T2C 


TO-3 


BUX16 


TO-3 


2N6271 


TO-3 


2N5672 


TO-3 


2SA504 


TO-39 


2N4037 


TO-39 


185T2A 


TO-3 


BUX16A 


TO-3 


2N6272 


TO-63 


2N3265 


TO-63 


2SA512 


TO-39 


2N4314 


TO-39 


185T2B 


TO-3 


BUX16A 


TO-3 


2N6273 
2N6294 


TO-63 
TO-66 


2N3265 
2N6534 


TO-63 
TO-66 


2SA560 
2SA597 


TO-39 
TO-39 


2N4314 
2N4037 


TO-39 
TO-39 


185T2C 
40250 


TO-3 
TO-66 


BUX16A 
2N3054 


TO-3 
TO-66 


2N6295 


TO-66 


2N6534 


TO-66 


2SA814 


TO-220 


2N6476 


TO-220 


40251 


TO-3 


2N3055 


TO-3 


2N6296 


TO-66 


RCA8350A TO-3 


2SA815 


TO-220 


2N6475 


TO-220 


40636 


TO-3 


2N3055 


TO-3 


2N6297 


TO-66 


RCA8350B TO-3 


2SB502A 


TO-66 


2N5954 


TO-66 


BC119 


TO-39 


2N697 


TO-39 


2N6298 
2N6299 

28 ,_. 


TO-66 
TO-66 


RCA8350A TO-3 
RCA8350B TO-3 


2SB503A 
2SB530 


TO-66 
TO-3 


2N5955 
2N6248 


TO-66 
TO-3 


BC120 
BC139 


TO-39 
TO-39 


2N697 
40406 


TO-39 
TO-39 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 



POWER TRANSISTORS (CONT'D) 

Industry RCA 

Type Package Type Package 

BC140 TO-39 2N5321 TO-39 

BC141 TO-39 2N5320 TO-39 

BC142 TO-39 40360 TO-39 

BC143 TO-39 40595 TO-39 

BC144 TO-39 40594 TO-39 

BC160 TO-39 2N5323 TO-39 

BC161 TO-39 2N5322 TO-39 

BC300 TO-39 2N1893 TO-39 

BC301 TO-39 2N699 TO-39 

BC302 TO-39 2N2270 TO-39 

BC303 TO-39 2N4314 TO-39 

BC304 TO-39 2N4037 TO-39 

BC310 TO-39 2N1893 TO-39 

BC311 TO-39 2N4314 TO-39 

BC323 TO-39 2N5320 TO-39 



BC324 

BC429 

BC430 

BC440 

BC441 

BC460 

BC461 

BCW44 

BCW45 

BCW77-16 

BCW78-16 TO-39 
BCW79-16 TO-39 
BCW80-16 TO-39 
BCY40 TO-39 



TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 

TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 



2N5320 


TO-39 


2N2270 


TO-39 


2N2270 


TO-39 


2N5321 


TO-39 


2N5320 


TO-39 


2N5323 


TO-39 


2N5322 


TO-39 


40360 


TO-39 


40362 


TO-39 


2N1711 


TO-39 



BCY54 
BD115 
BD116 
BD141 

BD144 
BD148 
BD149 
BD160 
BD162 
BD163 
BD185 
BD186 
BD187 
BD188 
BD189 
BD190 
BD191 
BD192 
BD195 
BD196 
BD197 
BD198 
BD199 
BD200 
BD201 

BD202 
BD203 
BD204 



TO-39 
TO-39 
TO-3 
TO-3 

TO-3 

TO-66 

TO-66 

TO-3 

TO-66 

TO-66 

TO- 126 

TO- 126 

TO- 126 

TO-126 

TO- 126 

TO-126 

TO-66 

TO-66 

Case 90 

Case 90 

Case 90 

Case 90 

Case 90 

Case 90 

Case 

199 

Case 

199 

Case 

199 

Case 

199 



2N1711 

2N4037 

2N4037 

2N4037 

2N4036 

BF258 

2N3055 

2N4347 

BUX18C 

BDY71 

BDY71 

2N6510 

40250 

2N6260 

BD239 

BD240 

BD239 

BD240 

BD239A 

BD240A 

2 N 3054 

2N6260 

BD243 

BD244 

BD243A 

BD244A 

CD243B 

BD244B 

BD243 

BD244 

BD243A 

BD244A 



TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-3 

TO-3 

TO-3 

TO-66 

TO-66 

TO-3 

TO-66 

TO-66 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-66 

TO-66 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 
TO-220 
TO-220 



Industry 
Type 

BD205 

BD206 

BD207 

BD208 

BD213-45 

BD2 13-60 

BD2 13-80 

BD214-45 

BD214-60 

BD2 14-80 

BD215 

BD216 

BD244A 

BD244B 

BD244C 

BD245 

BD245A 

BD245B 

BD246 

BD246A 

BD246B 

BD253 

BD253A 

BD253B 

BD253C 

BD260 

BD261 

BD264 

BD264A 

BD264B 

BD265 

BD265A 

BD265B 

BD266 

BD266A 

BD266B 

BD267 

BD267A 

BD267B 

BD268 

BD268A 

BD269 

BD269A 

BD271 

BD272 

BD273 

BD274 

BD275 

BD276 

BD291 

BD292 
BD293 
BD294 
BD301 
BD302 
BD303 
BD304 
BD311 
BD312 
BD313 
BD314 
BD315 



RCA 
Package Type 



Case 90 

Case 90 

Case 90 

Case 90 

TO-3P 

TO-3P 

TO-3P 

TO-3P 

TO-3P 

TO-3P 

TO-66 

TO-66 

TO-220 

TO-220 

TO-220 

TO-3P 

TO-3P 

TO-3P 

TO-3P 

TO-3P 

TO-3P 

TO-3 

TO-3 

TO-3 

TO-3 

TO-66 

TO-66 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

SOT-82 

SOT-82 

SOT-82 

SOT-82 

TO-220 

TO-220 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 



2N6486 
2 N 6489 
2 N 6487 
2 N 6490 
2N6486 
2 N 6487 
2 N 6489 
2 N 6489 
2N6490 
2N6491 
2 N 3584 
2N3585 
BD244A 
BD244B 
BD244C 

2N6486 

2 N 6487 

2N6488 

2N6489 

2 N 6490 

2N6491 

BUX18B 

BUX18C 

BU126 

TA8764 

2 N 3584 

2N3584 

RCA8203A 

RCA8203B 

BDX34C 

2N6387 

2 N 6388 

BDX33C 

BDX34A 

BDX34B 

BDX34C 

BDX33A 

BDX33B 

BDX33C 

BDX34A 

BDX34B 

BDX33A 

BDX33B 

BD241 

BD242 

BD241A 

BD242A 

BD241B 

BD242B 

BD243 

BD244 

BD243A 

BD244A 

BD243 

BD244 

BD243A 

BD244A 

2N6471 

2N6246 

2N6472 

2N6247 

2N6472 



Package 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-66 

TO-66 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 

TO-3 

TO-66 

TO-66 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 



Industry 
Type 

BD316 
BD317 
BD318 

BD375 
BD376 
BD377 
BD378 
BD379 
BD380 
BD410 
BD515 
BD516 
BD517 
BD518 

BD519 
BD520 
BD525 
BD526 

BD527 
BD528 
BD529 
BD530 
BD575 

BD576 

BD577 

BD578 
BD579 
BD580 
BD581 
BD582 
BD585 
BD586 
BD587 
BD588 
BD589 
BD590 
BD591 
BD592 
BD595 
BD596 
BD597 
BD598 



RCA 
Package Type 

TO-3 2N6247 
TO-3 2N6472 
TO-3 2N6248 



TO-126 
TO-126 
TO-126 
TO-126 
TO-126 
TO-126 
TO-126 
TO-202 
TO-202 
TO-202 
TO-202 



BD239 

BD240 

BD239A 

BD240A 

BD239B 

BD240B 

RCP111D 

RCP701A 

RCP700A 

RCP701B 

RCP701C 



TO-202 RCP701C 

TO-202 RCP700C 

TO-202 RCP701B 

TO-202 RCP700B 



TO-202 

TO-202 

TO-202 

TO-202 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 



RCP701C 
RCP700C 
RCP701 D 
RCP700D 
BD241 

BD242 



BD242A 

BD241B 

BD242B 

BD242C 

BD242C 

BD241 

BD242 

BD241A 

BD242A 

BD241B 

BD242B 

BD241C 

BD242C 

BD243 

BD244 

BD243A 

BD244A 



Package 

TO-3 
TO-3 
TO-3 

TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-202 
TO-202 
TO-202 
TO-202 
TO-202 

TO-202 
TO-202 
TO-202 
TO-202 

TO-202 
TO-202 
TO-202 
TO-202 
TO-220 

TO-220 



BD241A TO-220 



TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 



29 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 



POWER TRANSISTORS (CONT'D) 



Industry 
Type 

BD599 

BD600 

BD601 

BD602 

BD605 

BD606 

BD607 

BD608 

BD609 

BD610 

BD633 

BD634 

BD635 

BD636 

BD637 

BD638 

BD643 

BD644 

BD645 

BD646 

BD647 

BD648 

BD661 

BD662 

BD663 

BD663B 

BD664 

BD695 

BD695A 

BD696 

BD696A 

BD697 

BD697A 

BD698 

BD698A 

BD699 

BD699A 

BD700 

BD700A 



RCA 
Package Type 



Case 
199 
Case 
199 
Case 
199 
Case 
199 
Case 
199 



BD243B 



BD244B 



BD243C 



BD244C 



2N6486 



2N6489 



Case 

199 

Case 2N6487 

199 



Case 

199 

Case 

199 

Case 

199 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

Case 

199 

Case 
199 
Case 
199 
Case 
199 
Case 
199 
Case 
199 
Case 
199 
Case 
199 
Case 
199 
Case 
199 
Case 
199 
Case 
199 



2N6490 

2N6488 

2N6491 

40979 

40980 

40871 

40872 

40871 

40872 

BDX33 

BDX34 

BDX33A 

BDX34A 

BDX33B 

BDX34B 

2 N 6486 

2N6489 

2N6486 

2 N 6486 

2 N 6489 

BDX33 

BDX33 

BDX34 

BDX34 

BDX33A 

BDX33A 

BDX34A 

BDX34A 

BDX33B 

BDX33B 

BDX34B 

BDX34B 



Package 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 

TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 



Industry 
Type 

BD701 
BD702 



BD705 
BD706 
BD707 
BD708 
BD709 
BD710 
BDX14 
BDX16 
BDX27 
BDX28 

BDX30 

BDX53 

BDX53A 

BDX53B 

BDX53C 

BDX54 

BDX54A 

BDX54B 

BDX54C 

BDX60 

BDX61 

BDX62 

BDX62A 

BDX63 

BDX63A 

BDX64 

BDX64A 

BDX64B 

BDX65 

BDX65A 

BDX65B 

BDX77 

BDX78 

BDY10 

BDY12 

BDY13 

BDY15 

BDY17 

BDY20 

BDY25A 



RCA 
Package Type 

Case BDX33C 

199 

Case BDX34C 

199 



Package 

TO-220 

TO-220 



TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 



BDY25B 


TO-3 


BDY25C 


TO-3 


BDY26A 


TO-3 


BDY26B 


TO-3 


BDY26C 


TO-3 


BDY27A 


TO-3 


BDY27B 


TO-3 


BDY27C 


TO-3 


BDY28A 


TO-3 


BDY28B 


TO-3 


BDY28C 


TO-3 


BDY38 


TO-3 


BDY39 


TO-3 


BDY55 


TO-3 


BDY56 


TO-3 


BDY57 


TO-3 


BDY58 


TO-3 



2N6486 
2N6489 
2N6487 
2N6490 
2N6488 
2N6491 
2N3054 
BUX66 
2N3879 
2N3879 

2N6500 

BDX33 

BDX33A 

BDX33B 

BDX33C 

BDX34 

BDX34A 

BDX34B 

BDX34C 

2N6254 

2N3055 

RCA8350A 

RCA8350B 

2N6384 

2 N 6385 

BDX84A 

BDX84B 

BDX84C 

BDX83A 

BDX83B 

BDX83C 

BD243B 

BD244B 

2N6253 

BUX16 

BUX16 

BUX16 

BUX16 

BUX16 

BUX16 

BUX16 

BUX16 

BUX16 

BUX16 

BUX16 

BUX16 

BUX16 

BUX16 

BUX16A 

BUX16A 

BUX16A 

2N6253 

2N3055 

2N5039 

2N5038 

41012 

41013 



TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 



Industry 
Type 

BDY73 

BDY74 

BDY76 

BDY77 

BDY78 

BDY79 

BDY80A 

BDY81A 

BDY82A 

BDY83A 

BDY91 

BDY92 

BDY93 

BDY94 

BDY95 

BDY96 

BDY97 

BDY98 

BDY99 

BF111 

NF137 

BF157 

BF174 

BF177 

BF178 

BF179 

BF179A 

BF179B 

BF179C 

BF305 

BF322 

BF323 

BF336 

BF337 

BF338 

BF355 

BF380 

BF381 

BF382 

BF390 

BFR19 

BFR20 

BFR21 

BFR22 

BFR23 

BFR24 

BFR56 

BFR57 

BFR58 

BFR59 

BFR77 

BFR78 

BFS90 

BFS90A 

BFS91 

BFS91A 

BFS92 

BFS93 

BFS94 
BFS95 
BFT32 



RCA 
Package Type 

TO-3 2N3055 
TO-3 2N4347 
TO-3 2N3772 



TO-3 

TO-66 

TO-66 

TO-220 

TO-220 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-39 

TO-5 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-202 

TO-202 

TO-202 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 



2N3773 

2N6373 

2N3583 

2N5296 

2N5298 

2N6111 

2N6109 

2 N 5038 

2N5039 

BU126 

BU126 

BU126 

2N6513 

2N6512 

2N6511 

2N6511 

2N3440 

BF257 

BF257 

BF257 

40360 

40412 

BF257 

BF257 

BF258 

BF258 

BF257 

40317 

40319 

BF258 

BF258 

BF258 

2N3440 

RCP113A 

RCP113B 

RCP113C 

BF259 

2N1613 

2N1711 

2N1893 

2N2102 

2N4036 

2N4037 

2N5321 

BF257 

BF258 

BF259 

2N1893 

2N2405 

40987 

40987 

40999 

40999 

2N4036 

2N4314 



TO-39 2N4037 
TO-39 2N4037 
TO-39 40635 



Package 

TO-3 

TO-3 

TO-3 

TO-3 

TO-66 

TO-66 

TO-220 

TO-220 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 

TO-202 

TO-202 

TO-202 

TO-39 

TO-39 

TO-39 

TO-39 

TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 

TO-39 
TO-39 
TO-39 



30 



POWER TRANSISTORS (CONT'D) 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 



Industry 




RCA 




Industry 




RCA 




Industry 




RCA 




Type 


Packag 


i Type 


Package 


Type 


Package Type 


Package 


Type 


Package Type 


Package 


BFT33 


TO-39 


40409 


TO-39 HR 


BSS45 


TO-39 


2N5320 


TO-39 


BUX39 


TO-3 


2N5038 


TO-3 


BFT34 


TO-39 


2N2405 


TO-39 


BSS46 


TO-39 


2N5322 


TO-39 


BUX40 


TO-3 


2N6354 


TO-3 


BFT35 


TO-39 


2N4314 


TO-39 


BSS48 


TO-39 


2 N 3440 


TO-39 


BUX41 


TO-3 


BUX17A 


TO-3 


BFT36 


TO-39 


40410 


TO-39HR 


BSS49 


TO-39 


2N3439 


TO-39 


BUX42 


TO-3 
TO-3 


BUX17B 
BUX17C 


TO-3 
TO-3 


BFT39 


TO-39 


40409 


TO-39 HR 


BSV15 


TO-39 


2N4037 


TO-39 


BUX43 


BFT40 


TO-39 


40628 


TO-39 HR 


BSV15-6 


TO-39 


2N4037 


TO-39 


BUX44 


TO-3 


BUX18C 


TO-3 


BFT41 


TO-39 


40628 


TO-39 HR 


BSV15-1C 


TO-39 


2N4037 


TO-39 


BUX84 


TO-220 


TA8863A 


TO-220 


BFT44 


TO-39 


BF259 


TO-39 


BSV16 


TO-39 


2N4314 


TO-39 


BUY35 


TO-3 


2N6511 


TO-3 


BFT45 


TO-39 


BF258 


TO-39 


BSV16-6 


TO-39 


2N4314 


TO-39 


BUY43 


TO-66 


BDY71 


TO-66 


BFT60 


TO-39 


2N4037 


TO-39 


BSV16-10 


TO-39 


2N4314 


TO-39 


BUY46 


TO-66 


2N3054 


TO-66 


BFT61 


TO-39 


2N4037 


TO-39 


BSV17 


TO-39 


2N5322 


TO-39 


BUY55 


TO-3 


2N5239 


TO-3 


BFT62 


TO-39 


40815 


TO-39 


BSV69 


TO-39 


2N5321 


TO-39 


BUY56 


TO-3 


2N5239 


TO-3 


BFT80 


TO-39 


40815 


TO-39 


BSV77 


TO-39 


2N5321 


TO-39 


BUY66 


TO-3 


BU126 


TO-3 


BFW24 


TO-39 


2N2102 


TO-39 


BSV84 


TO-39 


2N1893 


TO-39 


BUY67 


TO-3 


BU126 


TO-3 


BFW25 


TO-39 


2N1711 


TO-39 


BSW23 


TO-39 


2N4037 


TO-39 


BUY69B 


TO-3 


BU126 


TO-3 


BFW26 


TO-39 


2N697 


TO-39 


BSW39 


TO-39 


2N1893 


TO-39 


BUY69C 


TO-3 


BU126 


TO-3 


BFW33 


TO-39 


2N1893 


TO-39 


BSX22 


TO-39 


2N5321 


TO-39 


BUY70B 


TO-3 


BU126 


TO-3 


BFW44 


TO-39 


BFT19 


TO-39 


BSX23 


TO-39 


2N5320 


TO-39 


BUY70C 


TO-3 


BU126 


TO-3 


BFW45 


TO-39 


BF257 


TO-39 


BSX40 


TO-39 


2N4037 


TO-39 










BFX17 


TO-39 


2N3053 


TO-39 


BSX45 


TO-39 


2N3053 


TO-39 


BUY72 


TO-3 


2N5239 


TO-3 


BFX29 


TO-39 


2N4036 


TO-39 


BSX46 


TO-39 


2N2102 


TO-39 


BUY74 
BUY75 
BUY76 
BUY77 


TO-3 


BUX18A 


TO-3 


BFX30 


TO-39 


2N4036 


TO-39 


BSX47 


TO-39 


2N1893 


TO-39 


TO-3 
TO-3 
TO-3 


BUX18C 

BU126 

BUX18A 


TO-3 
TO-3 
TO-3 


BFX39 


TO-39 


2N4036 


TO-39 


BSX59 


TO-39 


2N5321 


TO-39 


BFX68 


TO-39 


2N1711 


TO-39 


BSX60 


TO-39 


2N5321 


TO-39 


BFX68A 


TO-39 


2IM1711 


TO-39 


BSX61 


TO-39 


2N5321 


TO-39 


BUY78 


TO-3 


BUX18C 


TO-3 


BFX69 


TO-39 


2N697 


TO-39 


BSX72 


TO-39 


2N3053 


TO-39 


BUY79 


TO-3 


BUX126 


TO-3 


BFX69A 


TO-39 


2N1613 


TO-39 


BSX95 


TO-39 


2N1613 


TO-39 


D40D1 


TO-202 


RCP707 


TO-202 


BFX74 


TO-39 


2N4037 


TO-39 


BSX96 


TO-39 


2N1711 


TO-39 


D40D2 


TO-202 


RCP707 


TO-202 


BFX74A 


TO-39 


2N4314 


TO-39 


BSY25 


TO-39 


2N697 


TO-39 


D40D3 


TO-202 


RCP707 


TO-202 


BFX85 


TO-39 


2N2405 


TO-39 


BSY44 


TO-39 


2N699 


TO-39 


D40D4 


TO-202 


RCP707 


TO-202 


BFX86 


TO-39 


2N1711 


TO-39 


BSY45 


TO-39 


2N1893 


TO-39 


D40D5 


TO-202 


RCP707 


TO-202 


BFX87 


TO-39 


2N4036 


TO-39 


BSY46 


TO-39 


2N699 


TO-39 


D40D6 


TO-202 


RCP701 B 


TO-202 


BFX88 


TO-39 


2N4037 


TO-39 


BSY51 


TO-39 


2N697 


TO-39 


D40D7 


TO-202 


RCP701 B 


TO-202 


BFX91 


TO-39 


BFT28B 


TO-39 










D40D8 


TO-202 


RCP701B 


TO-202 


BFX98 


TO-39 


BF257 


TO-39 


BSY52 


TO-39 


2N1711 


TO-39 


D40D10 


TO-202 


RCP701C 


TO-202 


BFY10 


TO-39 


40814 


TO-39 


BSY53 


TO-39 


2N697 


TO-39 


D40D1 1 


TO-202 


RCP701C 


TO-202 


BFY11 


TO-39 


40814 


TO-39 


BSY54 


TO-39 


2IM1711 


TO-39 


D40D13 


TO-202 


RCP701C 


TO-202 


BFY17 


TO-39 


40317 


TO-39 


BSY55 


TO-39 


2N1893 


TO-39 


D40E1 


TO-202 


RCP705 


TO-202 


BFY33 


TO-39 


2N697 


TO-39 


BSY68 


TO-39 


2N2405 


TO-39 


D40E5 


TO-202 


RCP701B 


TO-202 


BFY34 


TO-39 


2N697 


TO-39 


BSY71 


TO-39 


2N1711 


TO-39 










BFY40 


TO-39 


40320 


TO-39 


BSY81 


TO-39 


2N697 


TO-39 


D40E7 


TO-202 


RCP701C 


TO-202 


BFY43 


TO-39 


BF257 


TO-39 


BSY82 


TO-39 


2N1711 


TO-39 


D40N1 


TO-202 


RCP113B 


TO-202 


BFY44 
BFY45 
BFY46 


TO-39 
TO-39 
TO-39 


2N2102 

40408 

2N1711 


TO-39 
TO-39 
TO-39 


BSY83 
BSY84 
BSY85 


TO-39 
TO-39 
TO-39 


2N697 

2N1711 

2N1893 


TO-39 
TO-39 
TO-39 


D40N2 
D40N3 
D40N4 


TO-202 
TO-202 
TO-202 


RCP111B 
RCP113C 
RCP111C 


TO-202 
TO-202 
TO-202 


BFY50 


TO-39 


2N697 


TO-39 


BSY87 


TO-39 


2N2102 


TO-39 


D40N5 


TO-202 


RCP111C 


TO-202 


BFY51 


TO-39 


2N697 


TO-39 


BSY91 


TO-39 


2N697 


TO-39 


D40P1 


TO-202 


2N6175 


TO-5P 


BFY52 


TO-39 


2N3053 


TO-39 


BSY92 


TO-39 


2N1711 


TO-39 


D40P3 


TO-202 


2N6175 


TO-5P 


BFY55 


TO-39 


2N697 


TO-39 


BU102 


TO-3 


BUX18B 


TO-3 


D40P5 


TO-202 


2N6175 


TO-5P 


BFY56 
BFY57 
BFY67 


TO-39 
TO-39 
TO-39 


2N699 
BF257 
2N3053 


TO-39 
TO-39 
TO-39 


BU111 
BU114 
BU121 


TO-3 
TO-3 
TO-3 


2N6512 
2N6510 
BUX18 


TO-3 
TO-3 
TO-3 


D41D1 
D41D2 
D41D4 


TO-202 
TO-202 
TO-202 


RCP706 

RCP706B 

RCP706B 


TO-202 
TO-202 
TO-202 


BFY67A 


TO-39 


2N1613 


TO-39 


BU129 


TO-3 


BUX18C 


TO-3 










BFY68 


TO-39 


2N1711 


TO-39 


BU134 


TO-3 


BU126 


TO-3 


D41D5 


TO-202 


RCP700B 


TO-202 


BFY70 


TO-39 


2N3053 


TO-39 


BU135 


TO-3 


2N6510 


TO-3 


D41D6 


TO-202 


RCP700B 


TO-202 


BFY94 


TO-39 


40594 


TO-39 


BU136 


TO-3 


2N6510 


TO-3 


D41D7 


TO-202 


RCP700B 


TO-202 


BSS15 


TO-39 


2N5320 


TO-39 


BU310 


TO-3 


BUX17 


TO-3 


D41D8 


TO-202 


RCP700B 


TO-202 


BSS16 


TO-39 


2N5321 


TO-39 


BU311 


TO-3 


BUX17 


TO-3 


D41D10 


TO-202 


RCP700C 


TO-202 


BSS17 
BSS18 
BSS30 
BSS32 


TO-39 
TO-39 
TO-39 
TO-39 


2N5322 
2N5323 
2N2102 
2N2405 


TO-39 
TO-39 
TO-39 
TO-33 


BU312 
BU409 
BUX26 
BUX27 


TO-3 
TO-220 
TO-3 
TO-3 


BUX17 
TA8863J 
2N6510 
BUX18C 


TO-3 
TO-220 
TO-3 
TO-3 


D41D11 
D41D13 
D41E1 
D41E5 


TO-202 
TO-202 
TO-202 
TO-202 


RCP700C 
RCP700C 
RCP704 
RCP700B 


TO-202 
TO-202 
TO-202 
TO-202 

31 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 

POWER TRANSISTORS (CONT'D) 



Industry 
Type 

D41E7 
D42C1 

D42C2 

D42C3 

D42C4 

D42C5 

D42C6 

D42C7 

D42C8 

D42C9 

D42C10 

D42C1 1 

D42C12 
D43C1 

D43C2 

D43C3 

D43C4 

D43C5 

D43C6 

D43C7 

D43C8 

D43C9 

D43C10 

D43C11 

D43C12 
D44C1 

D44C2 

D44C3 

D44C4 

D44C5 

D44C6 

D44C7 

D44C8 



Package 

TO-202 
TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 
TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 



TO-202 
TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 



RCA 
Type 

RCP700C 

2N6288 

RCP707 

2N6288 

RCP705 

2N6288 

RCP705 

2 N 6290 

RCP703A 

2 N 6290 

RCP701A 

2 N 6290 

RCP701A 

2N6292 

RCP703B 

2N6292 

RCP701B 

2N6292 

RCP701B 

2N6292 

RCP703C 

2N6292 

RCP701C 

RCP701C 

2N6111 

RCP706 

2N6111 

RCP704 

2N6111 

RCP704 

2N6109 

RCP702A 

2N6109 

RCP700A 

2N6109 

RCP700A 

2N6107 

RCP702B 

2N6107 

RCP700B 

2N6107 

RCP700B 

2N6107 

RCP700B 

2N6107 

RCP705C 

RCP700C 



2N6288 

BD239 

2N6288 

BD239 

2N6288 

BD239 

2 N 6290 

BD239 

2N6290 

BD239 

2N6290 

BD239 

2N6292 

BD239A 

2N6292 

BD239A 



Package 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-220 

TO-202 

TO-202 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 



Industry 
Type 

D44C9 



Package 

TO-220 



D44C10 TO-220 
D44C1 1 TO-220 



D44C12 

D44E1 

D44E2 

D44E3 

D44H1 

D44H2 

D44H4 

D44H5 

D44H7 

D44H8 

D44H10 

D44H11 

D44R1 

D44R2 

D44R3 

D44R4 

D44R5 

D44R6 

D45C1 

D45C2 

D45C3 

D45C4 

D45C5 

D45C6 

D45C7 

D45C8 

D45C9 

D45C10 

D45C11 

D45C12 

D45E1 

D45E2 

D45E3 

D45H1 

D45H2 

D45H4 

D45H5 

D45H7 

D45H8 

D45H10 

D45H11 

DTS410 

DTS411 

DTS413 



TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 



RCA 
Type 

2 N 6292 
BD239A 
2N6292 
BD239B 
2N6292 
BD239B 
BD239B 
2N6386 
2N6387 
2N6388 
2N6288 
2N6288 
2N6290 
2N6290 



TO-220 2N6292 
TO-220 2N6292 
TO-220 2N6292 



TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 

TO-220 



2N6292 

TA8863B 

TA8863B 

TA8863B 

TA8863B 

TA8863F 

TA8863F 

2N6111 

BD240 

2N6111 

BD240 

TO-220 2N6111 
BD240 

TO-220 2N6109 
BD240 

TO-220 2N6109 
BD240 

TO-220 2N6109 
BD240 

TO-220 2N6107 
BD240A 

TO-220 2N6107 
BD240A 

TO-220 2N6107 
BD240A 

TO-220 2N6107 
BD240B 

TO-220 2N6107 
BD240B 



TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 



BD240B 

2N6666 

2N6667 

2N6668 

2N6111 

2N6111 

2N6109 

2N6109 

2N6107 

2N6107 

2N6107 

2N6107 

RCA410 

RCA411 

RCA413 



Package 

TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 



Industry 
Type 

DTS423 

DTS431 

ESM113 

ESM114 

ESM159 

ESM160 

ESM213 

ESM214 

ESM217 

ESM218 

ESM259 

ESM260 

ESM261 

ESM262 

FT410 

FT411 
FT413 
FT423 
FT431 
MJ400 
MJ410 
MJ411 
MJ413 
MJ420 
MJ423 
MJ424 
MJ425 
MJ431 
MJ450 

MJ480 
MJ481 
MJ490 

MJ491 

MJ802 

MJ900 

MJ901 

MJ920 

MJ921 

MJ1000 

MJ1001 

MJ1200 

MJ1201 

MJ1800 

MJ2249 
MJ2250 
MJ2251 



RCA 
Package Type 



MJ2253 
MJ2254 
MJ2267 

MJ2268 
MJ2500 

MJ2501 

MJ2801 



TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-66 

TO-3 

TO-3 

TO-3 

TO- 39 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 
TO-3 
TO-3 

TO-3 
TO-3 
TO-3 
TO-3 
TO-3 
TO-3 
TO-3 
TO-3 
TO-3 
TO-3 
TO-3 

TO-66 
TO-66 
TO-66 



RCA423 

RCA431 

2 N 6384 

2N6385 

RCA8350A 

RCA8350B 

2N6387 

2N6388 

2 N 6387 

2N6388 

RCA8203A 

RCA8203B 

RCA8203A 

RCA8203B 

RCA410 



MJ2252 TO-66 



TO-66 
TO-66 
TO-3 

TO-3 
TO-3 

TO-3 

TO-3 



RCA411 

RCA413 

RCA423 

RCA431 

2N3585 

RCA410 

RCA411 

RCA413 

BF258 

RCA423 

BUX16C 

BUX18C 

RCA431 

2N6246 

2N6469 

2N6470 

2N6471 

2N6246 

2 N 6469 

2N6246 

RCS258 

RCA8350A 

RCA8350B 

RCA8350A 

RCA8350B 

RCA1000 

RCA1001 

2N6384 

2 N 6385 

2N5838 

BUX16C 

2N3879 

2N3879 

2N3584 

BUX67B 

2N3585 

BUX67C 

2N5955 

2N5954 

2N6246 

2N6469 

2N6246 

2 N 6649 



Package 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-66 

TO-3 

TO-3 

TO-3 

TO-39 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-66 

TO-66 

TO-66 

TO-66 
TO-66 
TO-66 
TO-66 
TO-3 
TO-3 
TO-3 
TO-204MA* 



RCA8350A TO-3 
2N6650 TO-204MA' 
RCA8350B TO-3 
2N6371 TO-3 



32 



JEDEC TO-204MA was formerly designated JEDEC TO-3. 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 



POWER TRANSISTORS (CONT'D) 

Industry 
Type 

MJ2840 



MJ2841 TO-3 
MJ2901 TO-3 



MJ2941 
MJ3000 
MJ3001 
MJ3010 
MJ301 1 
MJ3026 
MJ3027 



MJ3029 
MJ3030 
MJ3101 
MJ3201 
MJ3202 



MJ3583 
MJ3584 
MJ3585 
MJ3701 
MJ3760 
MJ3761 
MJ3771 
MJ3772 
MJ3773 
MJ4000 

MJ4001 
MJ4010 
MJ4011 

MJ4240 
MJ4502 
MJ5415 
MJ5416 
MJ5600 
MJ5601 
MJ5602 
MJ5603 
MJ6000 
MJ6001 
MJ6002 
MJ6003 
MJ6004 
MJ6302 
MJ7000 
MJE29 

MJE29A 



RCA 
Package Type 

TO-3 2N3055 
2N6471 
2N6254 
2N6472 
2N6246 
2N6249 



MJ2940 TO-3 



TO-3 
TO-3 
TO-3 
TO-3 
TO-3 
TO-3 
TO-3 



MJ3028 TO-3 



TO-3 

TO-3 

TO-66 

TO-66 

TO-66 



MJ3430 TO-3 



TO-66 

TO-66 

TO-66 

TO-66 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 
TO-3 
TO-3 

TO-66 

TO-3 

TO-39 

TO-39 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-63 

Case 

199 

Case 

199 



Package 

TO-3 
TO-3 
TO-3 
TO-3 
TO-3 
TO-3 



2N6246 


TO-3 


BDX18N 


TO-3 


2N6247 


TO-3 


2N6384 


TO-3 


2N6385 


TO-3 


BUX16B 


TO-3 


BUX16B 


TO-3 


2N5839 


TO-3 


2N5840 


TO-3 


BUX126 


TO-3 


2N5840 


TO-3 


BUX126 


TO-3 


BUX16A 


TO-3 


BUX16C 


TO-3 


2N3878 


TO-66 



BUX67A 

2N3585 

BUX67B 

2N5840 

BUX18B 



TO-66 

TO-3 

TO-66 

TO-3 

TO-3 



2N6211 


TO-3 


2N6212 


TO-66 


2N6212 


TO-66 


2N5956 


TO-66 


BU126 


TO-3 


BU126 


TO-3 


2N3771 


TO-3 


2N3772 


TO-3 


2N3773 


TO-3 


2N6384 


TO-3 


RCA1000 


TO-3 


2N6385 


TO-3 


RCA1001 


TO-3 


2N6649 TO-204MA* 


2N6667 


TO-3 


2N6650 TO-204MA* 


2N6668 


TO-3 


2N6212 


TO-66 


2N6248 


TO-3 


2N5415 


TO-39 


2N5416 


TO-39 


2N3772 


TO-3 


2N6258 


TO-3 


2N3773 


TO-3 


2N3773 


TO-3 


2N3772 


TO-3 


2N6258 


TO-3 


2N3773 


TO-3 


2N6258 


TO-3 


2N6258 


TO-3 


2N3773 


TO-3 


2N3265 


TO-63 


BD239 


TO-220 



BD239A TO-220 



Industry 
Type 

MJE29B 

MJE29C 

MJE30 

MJE30A 

MJE30B 

MJE30C 

MJE31 

MJE31A 

MJE31B 

MJE31C 

MJE32 

MJE32A 

MJE32B 

MJE32C 

MJE33 

MJE33A 

MJE33B 

MJE34 

MJE34A 

MJE34B 

MJE41 

MJE41A 

MJE41B 

MJE41C 

MJE42 

MJE42A 

MJE42B 

MJE42C 

MJE47 

MJE48 

MJE49 



RCA 
Package Type 

Case BD239B 
199 



Case 
199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 

199 



BD239C 
BD240 



BD240A 



Case 
199 
Case 
199 
Case 
199 

Case BD240B 

199 

Case BD240C 

199 

Case BD241 

199 



BD241A 

BD241B 

BD241C 

BD242 

BD242A 

BD242B 

BD242C 

2N6486 

2N6487 

2N6488 

2N6489 

2N6490 

2N6491 

BD243 

BD243A 

BD243B 

BD243C 

BD244 

BD244A 

BD244C 

BD244C 

TA8863C 

TA8863B 

TA8863A 



Package 

TO-220 

TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 



Industry 
Type 

MJE105 
MJE105K 

MJE205 

MJE205K 

MJE340K 

MJE341K 

MJE344K 

MJE370 
MJE370K 

MJE371 
MJE520 
MJE520K 

MJE521 
MJE700 

MJE701 

MJE702 

MJE703 

MJE800 

MJE801 

MJE802 

MJE803 

MJE1090 

MJE1091 

MJE1092 

MJE1093 

MJE1100 

MJE1101 

MJE1102 

MJE1103 

MJE1290 
MJE1291 
MJE1660 
MJE1661 
MJE2010 

MJE201 1 

MJE2020 



Package 

Case 90 
Case 
199 
Case 90 

Case 

199 

Case 

199 

Case 

199 

Case 

199 

Case 77 

Case 

199 

Case 77 

Case 77 

Case 

199 

Case 77 

TO-126 

TO- 126 

TO-126 

TO-126 

TO-126 

TO-126 

TO-126 

TO-126 

Case 90 

Case 90 

Case 90 

Case 90 

Case 90 

Case 90 

Case 90 

Case 90 

Case 90 

Case 90 

Case 90 

Case 90 

Case 

199 

Case 

199 

Case 

199 



RCA 
Type 

BD278A 
BD278A 

2N6290 

BD277 

BD277 

TA8863B 

TA8863J 



RCA30 
BD242 

RCA30 
RCA29 
BD241 

RCA29 

RCA125 

2N6667 

RCA125 

2N6667 

RCA126 

2N6668 

RCA126 

2N6668 

2N6387 

RCA120 

2N6387 

RCA120 

2N6388 

RCA121 

2N6388 

RCA121 

2N6667 

BDX34A 

2N6667 

BDX34A 

2N6667 

BDX34B 

2N6667 

BDX34B 

2N6387 

BDX33A 

2N6387 

BDX33A 

2N6388 

BDX33B 

2N6388 

BDX33B 

2N6489 

2N6490 

2N6486 

2N6487 

BD244 

BD244A 

BD243 



Package 
TO-220 
TO-220 

TO-220 
TO-220 
TO-220 

TO-220 

TO-220 



TA8865J TO-220 



TO-220 
TO-220 

TO-220 
TO-220 
TO-220 

TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 

TO-220 

TO-220 



33 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 

POWER TRANSISTORS (CONT'D) 



Industry 




RCA 




Industry 




RCA 




Industry 




RCA 




Type 


Package Type 


Package 


Type 


Package Type 


Package 


Type 


Package 


Type 


Package 


MJE2021 


Case 


BD243A 


TO-220 


MJE3055 


Case 90 


RCA3055 


TO-220 


MJE6044 


Case 90 


2N6530 


TO-220 




199 






MJE3055K Case 


RCA3055 


TO-220 






BDX33B 


TO-220 


MJE2050 


Case 


40979 


TO-220 




199 






MJE6045 


Case 90 


RCA122 


TO-220 




199 


RCA1C10 


TO-220 


MJE3370 


Case 


BD242 


TO-220 






BDX33C 


TO-220 


MJE2090 


Case 


RCA8203A 


TO-220 




199 






MM 3005 


TO-39 


40635 


TO-39 




199 


BDX34A 


TO-220 


MJE3371 


Case 90 


40980 


TO-220 






RCA1 A06 


TO-39 


MJE2091 


Case 


RCA8203A 


TO-220 






RCA1C11 


TO-220 


MM4000 


TO-39 


BFT28 


TO-39 




199 


BDX34A 


TO-220 


MJE3439 


TO- 126 


RCP111D 


TO-220 


MM4001 


TO-39 


BFT28A 


TO-39 


MJE2092 


Case 


RCA8203B 


TO-220 


MJE3740 


Case 


2N6107 


TO-220 


MM4002 


TO-39 


BFT28B 


TO-39 




199 


BDX34B 


TO-220 




199 






MM4003 


TO-39 


BFT28C 


TO-39 


MJE2093 


Case 


RCA8203B 


TO-220 


MJE3741 


Case 


2N6107 


TO-220 


MM5005 


TO-39 


40634 


TO-39 




199 


BDX34B 


TO-220 




199 










RCA1 A05 


TO-39 


MJE2100 


Case 
199 


2 N 6387 
BDX33A 


TO-220 
TO-220 


MJE4918 


Case 
199 


BD240 


TO-220 


MPSU01 


Case 
152 


RCP705 


TO-202 


MJE2101 


Case 
199 


2N6387 
BDX33A 


TO-220 
TO-220 


MJE4919 


Case 
199 


BD240A 


TO-220 


MPSU02 


Case 
152 


RCP701B 


TO-202 


MJE2102 


Case 
199 


2N6388 
BDX33B 


TO-220 
TO-220 


MJE4920 


Case 
199 


BD240B 


TO-220 


MPSU05 


Case 
152 


RCP701 B 


TO-202 


MJE2103 


Case 
199 


2 N 6388 
BDX33B 


TO-220 
TO-220 


MJE4921 


Case 
199 


BD239 


TO-220 


MPSU06 


Case 
152 


RCP701C 


TO-202 


MJE2160 


Case 90 


TA8863B 


TO-220 


MJE4922 


Case 


BD239A 


TO-220 


MPSU07 


Case 


RCP701D 


TO-202 


MJE2360 


Case 


TA8863E 


TO-220 




199 








152 








199 






MJE4923 


Case 


BD239B 


TO-220 


MPSU10 


Case 


RCP111D 


TO-202 


MJE2361 


Case 


TA8863A 


TO-220 




199 








152 








199 






MJE5655 


Case 


TA8863J 


TO-220 


MPSU51 


Case 


RCP704 


TO-202 


MJE2370 


Case 


2N6109 


TO-220 




199 








152 








199 


BD240 


TO-220 


MJE5656 


Case 


TA8863F 


TO-220 


MPSU52 


Case 


RCP700A 


TO-202 


MJE2371 


Case 


2N6107 


TO-220 




199 








152 








199 


BD240A 


TO-220 


MJE5657 


Case 


TA8863E 


TO-220 


MPSU55 


Case 
152 


RCP700B 


TO-202 


MJE2480 


Case 


2 N 6290 


TO-220 




199 














199 


BD243 


TO-220 


MJE5974 


Case 


2N6489 


TO-220 


MPSU56 


Case 


RCP700C 


TO-202 


MJE2481 


Case 


2N6292 


TO-220 




199 








152 








199 


BD243A 


TO-220 


MJE5975 


Case 


2N6490 


TO-220 


MPSU57 


Case 


RCP700D 


TO-202 


MJE2482 


Case 


2 N 6290 


TO-220 




199 








152 








199 


BD243 


TO-220 


MJE5976 


Case 


2N6491 


TO-220 


NSD102 


TO-202 


RCP701 B 


TO-202 


MJE2483 


Case 


2N6292 


TO-220 




199 






NSD103 


TO-202 


RCP701B 


TO-202 




199 


BD243A 


TO-220 


MJE5977 


Case 


2N6486 


TO-220 


NSD104 


TO-202 


RCP701C 


TO-202 


MJE2490 


Case 


2N6109 


TO-220 




199 






NSD105 


TO-202 


RCP701C 


TO-202 




199 


BD244 


TO-220 


MJE5978 


Case 


2N6487 


TO-220 


NSD106 


TO-202 


RCP701 D 


TO-202 


MJE2491 


Case 


2N6107 


TO-220 




199 






NSD131 


TO-202 


RCP113B 


TO-202 




199 


BD244A 


TO-220 


MJE5979 


Case 


2N6488 


TO-220 


NSD132 


TO-202 


RCP111B 


TO-202 


MJE2520 


Case 


2 N 6290 


TO-220 




199 






NSD133 


TO-202 


RCP113C 


TO-202 




199 


BD239 


TO-220 


MJE5980 


Case 


2N6489 


TO-220 


NSD134 


TO-202 


RCP111C 


TO-202 


MJE2521 


Case 


2N6292 


TO-220 




199 






NSD135 


TO-202 


RCP111D 


TO-202 




199 


BD239A 


TO-220 


MJE5981 


Case 


2N6490 


TO-220 


NSD202 


TO-202 


RCP700B 


TO-202 


MJE2522 


Case 


2N6290 


TO-220 




199 






NSD203 


TO-202 


RCP700B 


TO-202 




199 


BD241 


TO-220 


MJE5982 


Case 


2N6491 


TO-220 


NSD204 


TO-202 


RCP700C 


TO-202 


MJE2523 


Case 


2N6292 


TO-220 




199 






NSD205 


TO-202 


RCP700C 


TO-202 




199 


BD241A 


TO-220 


MJE5983 


Case 


2N6486 


TO-220 


NSD206 


TO-202 


RCP700D 


TO-202 


MJE2801 


Case 90 


2N6290 


TO-220 




199 






SDT410 


TO-3 


RCA410 


TO-3 






2N6487 


TO-220 


MJE5984 


Case 


2N6487 


TO-220 


SDT411 


TO-3 


RCA411 


TO-3 


MJE2801 K Case 


2 N 6487 


TO-220 




199 






SDT413 


TO-3 


RCA413 


TO-3 




199 






MJE5985 


Case 


2N6488 


TO-220 


SDT423 


TO-3 


RCA423 


TO-3 


MJE2901 


Case 90 


2N6107 


TO-220 




199 






SDT431 


TO-3 


RCA431 


TO-3 






2 N 6490 


TO-220 


MJE6040 


Case 90 


RCA125 


TO-220 


SDT6901 


TO-66 


2N6078 


TO-66 


MJE2901 K Case 


2 N 6490 


TO-220 






BDX34A 


TO-220 


SDT6902 


TO-66 


2N6078 


TO-66 




199 






MJE6041 


Case 90 


RCA125 


TO-220 


SDT6903 


TO-66 


2N6078 


TO-66 


MJE2955 


Case 90 


2N6490 


TO-220 






BDX34B 


TO-220 


SDT6904 


TO-66 


2N6078 


TO-66 






40878 


TO-220 


MJE6042 


Case 90 


RCA126 


TO-220 


SDT6905 


TO-66 


2N6078 


TO-66 


MJE2955K Case 


2 N 6490 


TO-220 






BDX34C 


TO-220 


SDT6906 


TO-66 


2N6078 


TO-66 




199 


40878 


TO-220 


MJE6043 


Case 90 


2N6387 


TO-220 


SDT6907 


TO-66 


2N6078 


TO-66 


MJE3054 
34 


Case 
199 


RCA3054 


TO-220 






BDX33A 


TO-220 


SDT6908 


TO-66 


2N6078 


TO-66 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 



POWER TRANSISTORS (CONT'D) 



Industry 
Type 

SDT7601 

SDT7602 

SDT7603 

SDT7604 

SDT7605 

SDT7607 

SDT7608 

SDT7609 

SDT7610 

SDT7731 

SDT7732 

SDT7733 

SDT8002 

SDT8003 

SDT8012 

SDT8013 

SDT8015 

SDT8016 

SDT8105 

SDT8106 

SDT8112 

SDT8113 

SDT8301 

SDT8302 

SDT8303 

SDT8304 

SDT9201 

SDT9202 

SDT9203 

SDT9204 

SDT9205 

SDT9206 

SDT9207 

SDT9208 

SDT9209 

SDT9210 

SDT9701 

SDT9702 

SDT9703 

SDT9704 

SDT9705 

SDT9706 

SDT9707 

SDT9801 

SDT9802 

SDT9803 

SDT9804 

SE9300 

SE9301 

SE9302 

SE9303 

SE9304 

SPC410 

SPC411 
SPC413 
SPC423 
SPC431 
STS410 
STS41 1 
STS413 
STS423 
STS431 
T1482 



RCA 
Package Type 



TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-63 

TO-63 



2N5039 
2 N 5039 
2N5038 
2N6496 
2N6249 
2N5039 
2N5039 
2N5038 
2 N 6354 
2N6470 
2N6471 
2N6472 
2N3266 
2N3265 



TO-63 2N3266 

TO-63 2N3265 

TO-63 2N3266 

TO-63 2N3265 



Radial 

Radial 

Radial 

Radial 

TO-63 

TO-63 

TO-63 

TO-63 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-220 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 

TO-3 
TO-3 
TO-3 
TO-3 
TO-3 
TO-3 
TO-3 
TO-3 
TO-3 
TO-39 



2N3264 

2N3263 

2N3264 

2N3263 

2N3266 

2N3265 

2N3266 

2N3265 

2N3055 

2N6254 

2N4348 

2N4348 

2N3055 

2 N 3055 

2N6254 

2N4348 

2N4348 

2N6253 

2N6258 

2N4348 

2N4348 

2N6254 

2N4348 

2N4348 

2N3055 

2N6254 

2N6254 

2N6254 

2N3773 

RCA120 

RCA121 

RCA122 

2N6384 

2N6385 

RCA410 



Package 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-63 

TO-63 

TO-63 

TO-63 

TO-63 

TO-63 

Radial 

Radial 

Radial 

Radial 

TO-63 

TO-63 

TO-63 

TO-63 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-220 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 



RCA411 


TO-3 


RCA413 


TO-3 


RCA423 


TO-3 


RCA431 


TO-3 


RCA410 


TO-3 


RCA411 


TO-3 


RCA413 


TO-3 


RCA423 


TO-3 


RCA431 


TO-3 


40311 


TO-39 



Industry 
Type 

T1484 
T1492 
T1493 
TIP29 



TIP30 

TIP30A 

TIP30B 

TIP30C 

TIP31 

TIP31A 

TIP31B 

TIP31C 

TIP32 

TIP32A 

TIP32B 



TIP33 

TIP33A 

TIP33B 

TIP34 

TIP34A 

TIP34B 

TIP41 



RCA 
Package Type 

TO-39 2N697 



TO-39 
TO-39 
TO-220 



40407 

2N1613 

BD239 

RCA29 

TIP29 



TIP29A TO-220 BD239A 
RCA29A 
TIP29A 

TIP29B TO-220 BD239B 
RCA29B 
TIP29B 

TIP29C TO-220 BD239C 
RCA29C 
TIP29C 
TO-220 BD240 



RCA30 
TIP30 



TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 



TIP32C TO-220 



TO-3P 
TO-3P 
TO-3P 
TO-3P 
TO-3P 
TO-3P 
TO-220 



Package 

TO-39 

TO-39 

TO-39 

TO-220 

TO-220 

TO-220 

TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 



TIP41A TO-220 



BD240A 


TO-220 


RCA30A 


TO-220 


TIP30A 


TO-220 


BD240B 


TO-220 


RCA30B 


TO-220 


TIP30B 


TO-220 


BD240C 


TO-220 


RCA30C 


TO-220 


TIP30C 


TO-220 


BD241 


TO-220 


RCA31 


TO-220 


TIP31 


TO-220 


BD241A 


TO-220 


RCA31A 


TO-220 


TIP31A 


TO-220 


BD241B 


TO-220 


RCA31B 


TO-220 


TIP31B 


TO-220 


BD241C 


TO-220 


RCA31C 


TO-220 


TIP31C 


TO-220 


BD242 


TO-220 


RCA32 


TO-220 


TIP32 


TO-220 


BD242A 


TO-220 


RCA32A 


TO-220 


TIP32A 


TO-220 


BD242B 


TO-220 


RCA32B 


TO-220 


TIP32B 


TO-220 


BD242C 


TO-220 


RCA32C 


TO-220 


TIP32C 


TO-220 


2 N 6486 


TO-220 


2N6487 


TO-220 


2 N 6488 


TO-220 


2N6489 


TO-220 


2 N 6490 


TO-220 


2N6491 


TO-220 


BD243 


TO-220 


RCA41 


TO-220 


TIP41 


TO-220 


BD243A 


TO-220 


RCA41A 


TO-220 


TIP41A 


TO-220 



Industry 
Type 

TIP41B 



TIP41C 
TIP42 



TIP110 
TIP111 
TIP112 
TIP115 
TIP116 
TIP117 
TIP120 



TIP121 



TIP127 

TIP140 
TIP141 
TIP142 
TIP145 
TIP146 
TIP147 
TIP525 
TIP531 
TIP535 
TIP538 
TIP539 
TIP544 
TIP546 
TIP640 
TIP641 
TIP642 
TIP645 
TIP646 
TIP647 
TIP2955 



RCA 
Package Type 

TO-220 BD243B 
RCA41B 
TIP41B 



TO-220 



TO-220 



TIP42A TO-220 



TIP42B TO-220 



TIP42C TO-220 



TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 



TO-220 



TIP122 TO-220 



TIP125 TO-220 



TIP126 TO-220 



TO-220 

TO-218 

TO-218 

TO-218 

TO-218 

TO-218 

TO-218 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3P 



TIP3054 TO-220- 



BD243C 

RCA41C 

TIP41C 

BD244 

RCA42 

TIP42 

BD244A 

RCA42A 

TIP42A 

BD244B 

RCA42B 

TIP42B 

BD244C 

RCA42C 

TIP42C 

BDX33A 

BDX33B 

BDX33C 

BDX34A 

BDX34B 

BDX34C 

BDX33A 

RCA120 

TIP120 

BDX33B 

RCA121 

TIP121 

BDX33C 

RCA122 

TIP122 

BDX34A 

RCA125 

TIP125 

BDX34B 

RCA126 

TIP126 

BDX34C 

TIP127 

2N6387 

2N6530 

2N6531 

2N6666 

2N6667 

2N6668 

BUX27A 

2N6250 

BUX17A 

2N6250 

2N6250 

2N6248 

2N6469 

2N6384 

2N6385 

2N6385 

2 N 6666 

2N6667 

2N6668 

2 N 6490 

40878 

RCA3054 



Package 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-3 

TO-220 

TO-220 

TO-220 

35 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 



POWER TRANSISTORS (CONT'D) 



Industry 
Type 



RCA 
Package Type 



TIP3055 TO-3P RCA3055 

TIP5530 TO-3P 2N6099 

TS2218 TO-39 2N1613 

TS2219 TO-39 2N1711 

TS2904 TO-39 40406 

SILICON CONTROLLED 
RECTIFIERS 



2N1842 TO-48 

2N1843 TO-48 

2N1844 TO-48 

2N1845 TO-48 

2N1846 TO-48 

2N1847 TO-48 

2N1848 TO-48 

2N1849 TO-48 

2N1850 TO-48 

2N4441 Case 90 

2N4442 Case 90 

2N4443 Case 90 

2N4444 Case 90 

2N6236 TO- 126 

2N6237 TO-126 

2N6238 TO-126 

2N6239 TO-126 

2N6240 TO-126 

2N6241 TO-126 

10RC10A TO-48 
10RC10AS24 TO-48 
10RC20A TO-48 
10RC20AS24 TO-48 
10RC30A TO-48 
10RC30AS24 TO-48 
10RC40A TO-48 
10RC40AS24 TO-48 
10RC50A TO-48 
10RC50AS24 TO-48 
10RC60AS24 TO-48 
16RC10A TO-48 
16RC10AS24 TO-48 
16RC20A TO-48 
16RC20AS24 TO-48 
16RC30A TO-48 
16RC30AS24 TO-48 
16RC40A TO-48 
16RC40AS24 TO-48 
16RC50A TO-48 
16RC50AS24 TO-48 
16RC60A TO-48 
16RC60AS24 TO-48 
BstB0106B MU22 
BstB0113B MU22 
BstB0126B MU22 



BstB0133B 

BstB0140B 

BstB0106BS4 

BstB0113BS4 

BstB0126BS4 

BstB0133BS4 

BstB0106BS5 

BstB0113BS5 

BstB0126BS5 

BstB0133BS5 



MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 



2N1842A 
2N1843A 
2N1844A 
2N1845A 
2N1846A 
2N1847A 
2N1848A 
2N1849A 
2N1850A 
S122F 
S122B 
S122D 
S122M 
S2060Y 
S2060F 
S2060A 
S2060B 
S2060D 
S2060M 
2N1844A 
2N3650 
2N1846A 
2N3650 
2N1848A 
2N3651 
2N1849A 
2N3652 
2N1850A 
S7410M 
S7410M 
2N683 
2N3650 
2N685 
2N3651 
2N687 
2 N 3652 
2N688 
2N3653 
2N689 
S7410M 
2N690 
S7410M 
S2061A 
S2061 B 
S2061 D 
S2061 E 
S2061 M 
S2061A 
S2061 B 
S2061 D 
S2061 E 
S2061A 
S2061 B 
S2061 D 
S2061 E 



Package 

TO-220 

TO-220 

TO-39 

TO-39 

TO-39 



TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 



Industry 
Type 

BstB0106C 

BstB0113C 

BstB0126C 

BstB0133C 

BstBOHOC 

BstB0106CS4 

BstB0113CS4 

BstB0126CS4 

BstB0133CS4 

BstB0140CS4 

BstB0106D 

BstB0113D 

BstB0126D 

BstB0133D 

BstBOHOD 

BstB0106E 

BstB0113E 

BstB0126E 

BstB0133E 

BstB0140E 

BstB0106F 

BstB0113F 

BstB0126F 

BstB0133F 

BstB0140F 

BstB0206B 

BstB0213B 

BstB0226B 

BstB0233B 

BstB0206BS4 

BstB0213BS4 

BstB0226BS4 

BstB0233BS4 

BstB0206BS5 

BstB0213BS5 

BstB0226BS5 

BstB0233BS5 

BstB0206C 

BstB0213C 

BstB0233C 

BstB0240C 

BstB0206CS4 

BstB0213CS4 

BstB0226CS4 

BstB0233CS4 

BstB0240CS4 

BstB0206D 

BstB0213D 

BstB0226D 

BstB0233D 

BstB0240D 

BstB0206E 

BstB0213E 

BstB0226E 

BstB0233E 

BstB0240E 

BstB0206F 

BstB0213F 

BstB0226F 

BstB0233F 

BstB0240F 

BstC0313 



RCA 
Package Type Package 



MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 

MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
MU23 
SC88 



S2062A 

S2062B 

S2062D 

S2062E 

S2062M 

S2062A 

S2062B 

S2062D 

S2062E 

S2062M 

S2062A 

S2062B 

S2062D 

S2062E 

S2062M 

S2062A 

S2062B 

S2062D 

S2062E 

S2062M 

S2062A 

S2062B 

S2062D 

S2062E 

S2062M 

S2061A 

S2061 B 

S2061 D 

S2061 E 

S2061A 

S2061 B 

S2061 D 

S2061 E 

S2061A 

S2061 B 

S2061 D 

S2061 E 

S2062A 

S2062B 

S2062E 

S2062M 
S2062A 
S2062B 
S2062D 
S2062E 
S2062M 
S2062A 
S2062B 
S2062D 
S2062E 
S2062M 
S2062A 
S2062B 
S2062D 
S2062E 
S2062M 
S2062A 
S2062B 
S2062D 
S2062E 
S2062M 
2N1846 



TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 

TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 

TO-220 
TO-48 



Industry RCA 

Type Package Type 

BstC0326 SC88 2N1849 

BstC0313S6SC88 2N1846 

BstC0326S6 SC88 2N 1 849 

BstC0506E TO-66 2N3228 

BstC0513E TO-66 2N3228 

BstC0526E TO-66 2N3525 

BstC0533E TO-66 2N4101 

BstC0540E TO-66 2N4101 

BstC0546E TO-66 2N4101 

BstC0506F TO-66 2N3228 

BstC0513F TO-66 2N3228 

BstC0526F TO-66 2N3525 

BstC0533F TO-66 2N4101 

BstC0540F TO-66 2N4101 

BstC0546F TO-66 2N4101 

BstC0506G TO-66 2N3228 

BstC051 3G TO-66 2N3228 

BstC0526G TO-66 2N3525 

BstC0533G TO-66 2N4101 

BstC0540G TO-66 2N4101 

BstC0546G TO-66 2N4101 

BstC0506H TO-66 2N3228 

BstC0513H TO-66 2N3228 

BstC0526H TO-66 2N3525 

BstC0533H TO-66 2N4101 

BstC0540H TO-66 2N4101 

BstC0546H TO-66 2N4101 
BT1 02-300 R TO-220 S2800C 

BT102-500R TO-220 S2800E 

BTW30-300 TO-48 2 N 3657 

BTW30-400 TO-48 2N3658 

BTW30-500 TO-48 S7432M 

BTW30-600 TO-48 S7432M 



BTW31-300 
BTW3 1-400 
BTW3 1-500 
BTW3 1-600 
BTW47-600 
BTW92-600 
BTW92-800 
BTX31-100 
BTX31-200 
BTX3 1-400 
BTX3 1-500 
BTX3 1-600 
BTX32-100 
BTX32-400 
BTX32-500 
BTX32-600 
BTX33-100 
BTX33-200 
BTX33-400 
BTX33-500 
BTX33-600 
BTX70-100 
BTX70-200 
BTX70-400 
BTX70-500 
BTX70-600 
BTX71-100 
BTX7 1-200 
BTX7 1-400 



TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 



2N3657 
2 N 3658 
S7412M 
S7412M 
S6410M 
2N3899 
S6410N 
S7310A 
S7310B 
S7310D 
S7310M 
S7310M 
S7310B 
S7310D 
S7310M 
S7310M 
S6210A 
S6210B 
S6210D 
S6210M 
S6210M 
S6210A 
S6210B 
S6210D 
S6210M 
S6210M 
S7310B 
S7310B 
S7310D 



Package 

TO-48 
TO-48 
TO-48 

TO-66 
TO-66 
TO-66 
TO-66 
TO-66 

TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-220 

TO-220 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

stud 

stud 

stud 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 



36. 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 



SILICON CONTROLLED RECTIFIERS (CONT'D) 



Industry 




RCA 




Type 


Package Type 


Package 


BTX7 1-500 


TO-48 S7310M 


TO-48 


BTX7 1-600 


TO-48 S7310M 


TO-48 


BTX72-100 


TO-48 S7310M 


TO-48 


BTX72-200 


TO-48 S7310M 


TO-48 


BTX72-400 


TO-48 S7310M 


TO-48 


BTX72-500 


TO-48 S7310M 


TO-48 


BTX72-600 


TO-48 S7310M 


TO-48 


BTX73-100 


TO-48 2N683 


TO-48 


BTX73-200 


TO-48 2N685 


TO-48 


BTX73-400 


TO-48 2N688 


TO-48 


BTX73-500 


TO-48 2N689 


TO-48 


BTX73-600 


TO-48 2N690 


TO-48 


BTX74-100 


TO-48 S6210A 


TO-48 


BTX74-200 


TO-48 S6210B 


TO-48 


BTX74-400 


TO-48 S6210D 


TO-48 


BTX74-500 


TO-48 S6210M 


TO-48 


BTX74-600 


TO-48 S6210M 


TO-48 


BTY87-400 TO-48 


S6210D 


stud 


BTY87-400R TO-48 2N3898 


stud 


BTY87-500 TO-48 


S6210M 


stud 


BTY87-500R TO-48 2N3899 


stud 


BTY87-600 TO-48 


S6210M 


stud 


BTY87-600R TO-48 2N3899 


stud 


BTY87-800R TO-48 S6410N 


stud 


BTY9 1-400 TO-48 


S6210D 


stud 


BTY91-400R TO-48 2 N 3898 


stud 


BTY9 1-500 TO-48 


S6210M 


stud 


BTY91-500R TO-48 2N3899 


stud 


BTY91 -600 TO-48 


S6210M 


stud 


BTY91-600R TO-48 2N3899 


stud 


BTY91-800R TO-48 S641 ON 


stud 


C20A 


stud 


S6210A 


stud 


C20B 


stud 


S6210B 


stud 


C20C 


stud 


S6210C 


stud 


C20D 


stud 


S6210D 


stud 


C20F 


stud 


S6210A 


stud 


C20U 


stud 


S6210A 


stud 


C22A 


press-f 


t S6200A 


press-fit 


C22B 


press-f 


t S6200B 


press-fit 


C22C 


press-f 


t S6200C 


press-fit 


C22D 


press-f 


t S6200D 


press-fit 


C22F 


press-f 


t S6200A 


press-fit 


C22U 


press-f 


t S6200A 


press-fit 


C30A 


stud 


2N3896 


stud 


C30B 


stud 


2N3897 


stud 


C30C 


stud 


2N3898 


stud 


C30D 


stud 


2N3898 


stud 


C30P 


stud 


2N3896 


stud 


C30U 


stud 


2N3896 


stud 


C31A 


stud 


2N3896 


stud 


C31B 


stud 


2N3897 


stud 


C31C 


stud 


2N3898 


stud 


C31D 


stud 


2N3898 


stud 


C31P 


stud 


2N3896 


stud 


C31U 


stud 


2 N 3896 


stud 


C32A 


press-f 


t 2N3870 


press-fit 


C32B 


press-f 


t 2N3871 


press-fit 


C32C 


press-f 


t 2N3872 


press-fit 


C32D 


press-f 


t 2N3872 


press-fit 


C32F 


press-f 


t 2N3870 


press-fit 


C32U 


press-f 


t 2N3870 


press-fit 


C33A 


press-f 


t 2N3870 


press-fit 


C33B 


press-f 


t 2N3871 


press-fit 



Industry 
Type 

C33C 

C33D 

C33F 

C33U 

C34A2 

C34B2 

C34C2 

C34D2 

C34E2 

C34F2 

C35A 

C35B 

C35C 

C35D 

C35E 

C35F 

C35G 

C35H 

C35M 

C35U 

C36A 
C36B 
C36C 
C36D 
C36E 



RCA 
Package Type 



press-fit 

press-fit 

press-fit 

press-fit 

stud 

stud 

stud 

stud 

stud 

stud 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 
TO-48 
TO-48 
TO-48 
TO-48 



2N3872 

2N3872 

2N3870 

2N3870 

2N3650 

2N3651 

2N3652 

2N3653 

S7410M 

2N3650 

2N683 

2N3896 

2N685 

2N3897 

2N687 

2N3898 

2N688 

2N3898 

2N689 

2N3899 

2N682 

2N3896 

2N684 

2N3897 

2N686 

2 N 3898 

2N690 

2N3899 

2N681 

2N3896 

2N1844A 

2N1846A 

2N1848A 

2N1849A 

2N1850A 



Package 

press-fit 

press-fit 

press-fit 

press-fit 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

stud 

TO-48 

stud 

TO-48 

stud 

TO-48 

stud 

TO-48 

stud 

TO-48 

stud 

TO-48 

stud 

TO-48 

stud 

TO-48 

stud 

TO-48 

stud 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 



C36F 


TO-48 


2N1843A 


TO-48 


C36G 


TO-48 


2N1845A 


TO-48 


C36H 


TO-48 


2N1847A 


TO-48 


C36U 


TO-48 


2N1842A 


TO-48 


C38A 


TO-48 


2N683 


TO-48 


C38B 


TO-48 


2N685 


TO-48 


C38C 


TO-48 


2N687 


TO-48 


C38D 


TO-48 


2N688 


TO-48 


C38E 


TO-48 


2N689 


TO-48 


C38F 


TO-48 


2N682 


TO-48 


C38G 


TO-48 


2N684 


TO-48 


C38M 


TO-48 


2N686 


TO-48 


C38U 


TO-48 


2N681 


TO-48 


C40A 


TO-48 


2N3650 


TO-48 


C40B 


TO-48 


2N3651 


TO-48 


C40C 


TO-48 


2N3652 


TO-48 


C40D 


TO-48 


2N3653 


TO-48 


C40E 


TO-48 


S7410M 


TO-48 


C40F 


TO-48 


2N3650 


TO-48 


C40G 


TO-48 


2N3651 


TO-48 


C40H 


TO-48 


2N3652 


TO-48 


C40U 


TO-48 


2N3650 


TO-48 


C45A 


TO-49 


TAS8612A 


stud 


C45B 


TO-49 


TAS8612B 


stud 


C45C 


TO-49 


TAS8612D 


stud 


C45D 


TO-49 


TAS8612D 


stud 


C45E 


TO-49 


TAS8612M 


stud 



Industry 
Type 

C45F 
C45G 
C45H 
C45M 
C45N 
C45U 
C106A 

C106B 

C106C 

C106D 

C106F 

C106Q 

C106Y 

C107A 

C107B 

C107C 

C107D 

C107F 

C107Q 

C107Y 

C122A 

C122B 

C122C 

C122D 

C122E 

C122F 

C122G 

C122M 

C122Y 



RCA 
Package Type 

TO-49 TAS8612A 
TO-49 TAS8612B 
TO-49 TAS8612D 



TO-49 
TO-49 
TO-49 



TAS8612M 
TAS8612N 
TAS8612A 



TO- 202 C106A 

S106A 
TO-202 C106B 

S106B 
TO-202 C106C 

S106C 
TO-202 C106D 

S106D 



TO-202 
TO-202 
TO-202 
TO-202 
TO-202 
TO-202 
TO-202 
TO-202 
TO-202 
TO-202 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 



C137E 


TO-48 


C137M 


TO-48 


C137N 


TO-48 


C137S 


TO-48 


C140A 


TO-48 


C140B 


TO-48 


CHOC 


TO-48 


C140D 


TO-48 


C140F 


TO-48 


C141A 


TO-48 


C141B 


TO-48 



C106F 

S106F 

C106Q 

S106Q 

C106Y 

S106Y 

C107A 

S107A 

C107B 

S107B 

C107C 

S107C 

C107D 

S107D 

C107F 

S107F 

C107Q 

S107Q 

C107Y 

S107Y 

S122A 

S2800A 

S122B 

S2800B 

S122C 

S2800C 

S122D 

S2800D 

S122E 

S2800E 

S122F 

S2800F 

S122G 

S2800G 

S122M 

S2800M 

S122A 

S2800A 

2N3899 

2N3899 

S6410N 

S6410N 

2N3650 

2N3651 

2N3652 

2N3653 

2N3654 

2N3655 

2N3656 



Package 

stud 

stud 

stud 

stud 

stud 

stud 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

stud 

stud 

stud 

stud 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 



37 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 



SILICON CONTROLLED RECTIFIERS (CONT'D) 



Industry 
Type 

C141C 

C141D 

C141F 

C220A 

C220A2 

C220B 

C220B2 

C220C 

C220C2 

C220D 

C220D2 

C220E 

C220E2 

C220F 

C220F2 

C220U 

C220U2 

C222A 

C222B 

C222C 

C222D 

C222E 

C222F 

C222U 

CS5-2T 

CS5-4T 

CS5-5.5T 

CS10-02M 

CS10-02N 

CS10-05M 

CS10-05N 

CS10-1M 

CS10-1N 

CS10-2M 

CS10-2N 

CS10-4M 

CS10-4N 

CS10-6M 

CS10-6N 

CS20-05M 

CS20-05N 

CS20-1M 

CS20-1N 

CS20-2M 

CS20-2N 

CS20-4M 

CS20-4N 

CS20-6M 

CS20-6N 

CS35-02M 

CS35-02N 

CS35-05M 

CS35-05N 

CS35-1M 

CS35-1N 

CS35-2M 

CS35-2N 

CS35-4M press-fit 

CS35-4N stud 

CS35-6M press-fit 

CS35-6N stud 

CS0602602 MU22 



RCA 
Package Type 

TO-48 2N3657 

TO-48 2N3658 

TO-48 2N3654 

stud S6210A 

ISOstud S6220A 

stud S6210B 

ISOstud S6220B 

stud S6210C 

ISOstud S6220C 

stud S6210D 

ISOstud S6220D 

stud S6210M 

ISOstud S6220M 

stud S6210A 

ISOstud S6220A 

stud S6210A 

ISOstud S6220A 

S6200A 

S6200D 

S6200D 

S6200D 

S6200M 

S6200A 

S6200A/ 

2N3228 

2N3525 

2N4101 

S6200A 

S6210A 

S6200A 

S6210A 

S6200A 

S6210A 

S6200B 

S6210B 

S6200D 

S6210D 

S6200M 

S6210D 

S6200A 

S6210A 

S6200A 

S6210A 

S6200B 

S6210B 

S6200D 

S6210D 

S6200M 

S6210M 

2N3870 

2N3896 

2N3870 

2 N 3896 

2N3870 

2 N 3896 

2IM3871 

2N3897 

2N3872 

2N3898 

2N3873 

2 N 3899 

S108B 



press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

TO-66 

TO-66 

TO-66 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 



Package 

TO-48 

TO-48 

TO-48 

stud 

ISOstud 

stud 

ISOstud 

stud 

ISOstud 

stud 

ISOstud 

ISOstud 

ISOstud 

stud 

ISOstud 

stud 

ISOstud 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

TO-66 

TO-66 

TO-66 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

press-fit 

stud 

TO-202 



Industry 
Type 

CS0602604 
CS0604602 
CS0604604 
CS0606602 
CS1 02603 
CS1 04603 
CS1 06603 
CS1 08603 
CS302D02 



RCA 
Package Type 



MU22 
MU22 
MU22 
MU22 
MU23 
MU23 
MU23 
MU23 
TO-220 



CS304D02 TO-220 
CS305D02 TO-220 
CS306D02 TO-220 
EC106A1 TO-202 



TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

Case 77 



EC106B1 

EC106M1 

EC107A1 

EC107B1 

EC107M1 

IR140A 

IR140B 

IR140C 

IR140D 

IR140F 

IR141A 

IR141B 

IR141C 

IR141D 

IR141F 

MCR106-1 

MCR 106-2 Case 77 

MCR106-3 Case 77 

MCR106-4 Case 77 

MCR106-5 Case 77 

MCR106-6 Case 77 

MCR106-7 Case 77 

MCR106-8 Case 77 

MCR107-1 Case 77 

MCR107-2 Case 77 

MCR107-3 Case 77 

MCR 107-4 Case 77 

MCR107-5 Case 77 

MCR107-6 Case 77 

MCR 107-7 Case 77 

MCR406-1 Case 90 

MCR406-2 Case 90 

MCR406-3 Case 90 

MCR406-4 Case 90 

MCR407-1 Case 90 

MCR407-2 Case 90 

MCR407-3 Case 90 

MCR407-4 Case 90 

MCR1718-5 TO-48 

MCR 171 8-6 TO-48 

MCR 171 8-7 TO-48 

MCR1718-8 TO-48 

MCR3000-1 Case 90 

MCR3000-2 Case 90 

MCR3000-3 Case 90 

MCR3000-4 Case 90 

MCR3000-5 Case 90 

MCR3000-6 Case 90 

MCR3000-7 Case 90 



S107B 
S108D 
S107D 
S108M 
S108B 
S108D 
S108E 
S108M 
S2062B 

S2062D 

S2062E 

S2062M 

S106A 

S106B 

S106M 

S107A 

S107B 

S107M 

2 N 3650 

2N3651 

2N3652 

2N3653 

2N3654 

2N3655 

2N3656 

2N3657 

2N3658 

2N3654 

S2061Y 

S2061 F 

S2061 A 

S2061 B 

S2061C 

S2061 D 

S2061 E 

S2061 M 

S2062Y 

S2062F 

S2062A 

S2062B 

S2062C 

S2062D 

S2062E 

S2060Y 

S2060F 

S2060A 

S2060B 

S2061 Y 

S2061 F 

S2061A 

S2061 B 

2N3653 

2N3653 

S7410M 

S7410M 

S122F 

S122F 

S122A 

S122B 

S122C 

S122D 

S122E 



Package 

TO-202 
TO-202 
TO-202 
TO-202 
TO-202 
TO-202 
TO-202 
TO-202 
TO-220 

TO-220 

TO-220 

TO-220 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-202 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-48 

TO-48 

TO-48 

TO-48 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 



Industry 
Type 

MCR3000 

MCR3818 

MCR3818 

MCR3818 

MCR3818 

MCR3835 

MCR3835 

MCR3835 

MCR3835 

MCR3835 

MCR3835 

MCR3835 

MCR3835 

MCR3918 

MCR3518 

MCR3918 

MCR3918 

MCR3935 

MCR3936 

MCR9935 

MCR3935 

MCR3935 

MCR3935 

MCR3935 

MCR3935 

NL-C35A 

NL-C35B 

NL-C35C 

NL-C35D 

NL-C35E 

NL-C35G 

NL-C35H 

NL-C35M 

NL-C36A 

NL-C36B 

NL-C36C 

NL-C36D 

NL-C36E 

NL-C36G 

NL-C36H 

NL-C40A 

NL-C40B 

NL-C40C 

NL-C40D 

NL-C40E 

NL-C40G 

NL-C40H 

NL570M 

PS08 

PS18 

PS020 

PS28 

PS035 

PS38 

PS48 

PS58 

PS68 

PS120 

PS135 

PS220 

PS235 

PS320 



RCA 
Package Type 

8Case90S122M 



1 press-f 
3 press-f 
5 press-f 

7 press-f 

1 press-f 

2 press-f 

3 press-f 

4 press-f 

5 press-f 

6 press-f 
•7 press-f 

8 press-f 
1 stud 

3 stud 
5 stud 

7 stud 

1 stud 

2 stud 

3 stud 

4 stud 

5 stud 

6 stud 

7 stud 

8 stud 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 



itS6200A 
itS6200A 
itS6200D 
itS6200M 
it 2 N 3870 
it2N3870 
it2N3870 
it2N3871 
it2N3872 
it2N3872 
it2N3873 
it2N3873 
S6210A 
S6210A 
S6210D 
S6210M 
2N3896 
2 N 3896 
2N3896 
2 N 3897 
2N3898 
2N3898 
2N3899 
2N3899 
2N683 
2N685 
2N687 
2N688 
2N689 
2N684 
2N686 
2N689 
2N1844A 
2N1846A 
2N1848A 
2N1849A 
2N1850A 
2N1845A 
2N1847A 
2N3650 
2N3651 
2N3652 

2N3654 
S7410M 
2N3651 
2N3652 
2N690 



press-fit S6200A 
press-fit S6200A 
press-fit S6200A 
press-fit S6200B 
press-fit 2N3870 
press-fit S6200D 



press-fit 
press-fit 
press-fit 
press-fit 
press-fit 
press-fit 
press-fit 
press-fit 



S6200D 
S6200M 
S6200M 
S6200M 
2N3870 
S6200B 
2N3871 
S6200D 



Package 

TO-220 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

TO-48 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 



38 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 



SILICON CONTROLLED RECTIFIERS (CONT'D) 



Industry 




RCA 




Industry 




RCA 




Industry 




RCA 




Type 


Package 


Type 


Package 


Type 


Package Type 


Package 


Type 


Package 


Type 


Package 


PS335 


press-fit 


2N3872 


press-fit 


RTU0202 


stud 


2N3896 


stud 


S4010B 


ISOstud S6220D 


ISOstud 


PS420 


press-fit 


S6200D 


press-fit 


RTU0205 


stud 


2N3896 


stud 


S4010G 


press-fit 


S6200D 


press-fit 


PS435 


press-fit 


2N3872 


press-fit 


RTU0210 


stud 


2N3896 


stud 


S4010H 


stud 


S6210D 


stud 


PS520 


press-fit 


S6200M 


press-fit 


RTU0220 


stud 


2N3897 


stud 


S4016B 


ISOstud S6220D 


ISOstud 


PS535 


press-fit 


2N3873 


press-fit 


RTU0230 


stud 


2N3898 


stud 


S4016G 


press-fit 


S6200D 


press-fit 


PS620 


press-fit 


S6200M 


press-fit 


RTU0240 


stud 


2N3898 


stud 


S4016H 


stud 


S6210D 


stud 


PS635 


press-fit 


2N3873 


press-fit 


RTU0250 


stud 


S6410N 


stud 


S4025G 


press-fit 


2N3872 


press-fit 


RCA106A 


TO-220AB 


S2060A 


TO-220AB 


RTU0260 


stud 


S6410N 


stud 


S4025H 


stud 


2N3898 


stud 


RCA106B 


TO-220AB S2060B 


TO-220AB 


RTU0602 


stud 


2N3896 


stud 


S4035G 


press-fit 2N3872 


press-fit 


RCA106D 


TO-220AB S2060D 


TO-220AB 


RTU0605 


stud 


2N3896 


stud 


S4035H 


stud 


^i\jo»b 


stud 


RCA106E 


TO-220AB S2060E 


TO-220AB 


RTU0610 


stud 


2N3896 


stud 


S6003RS2 


TO-220 


S2060M 


TO-220 


RCA106F 


TO-220AB S2060F 


TO-220AB 


RTU0620 


stud 


2N3897 


stud 


S6003RS3 


TO-220 


S2061 M 


TO-220 


RCA106Q 


TO-220AB S2060Q 


TO-220AB 


RTU0630 


stud 


2N3898 


stud 


S6006B 


ISOstud S6220M 


ISOstud 


RCA106M 


TO-220AB S2060M 


TO-220AB 


RTU0640 


stud 


2N3898 


stud 


S6006G 


press-fit 


S6200M 


press-fit 


RCA106Y 


TO-220AB S2060Y 


TO-220AB 


RTU0650 


stud 


2N3899 


stud 


S6006H 


stud 


S6210M 


stud 


RCA 107 A 


TO-220AB S2061A 


TO-220AB 


RTU0660 


stud 


2N3899 


stud 


S6008G 


press-fit 


S6200M 


press-fit 


RCA107B 


TO-220AB S2061B 


TO-220AB 


RTU0705 


stud 


2N3896 


stud 


S6008H 


stud 


S6210M 


stud 


RCA107C 


TO-220AB S2061C 


TO-220AB 


RTU0710 


stud 


2N3896 


stud 


S6010B 


ISOstud S6220M 


ISOstud 


RCA107D 


TO-220AB S2061D 


TO-220AB 


RTU0720 


stud 


2N3897 


stud 


S6010G 


press-fit S6200M 


press-fit 


RCA107E 


TO-220AB S2061E 


TO-220AB 


RTU0730 


stud 


2N3898 


stud 


S6010H 


stud 


S6210M 


stud 


RCA107F 


TO-220AB S2061F 


TO-220AB 


RTU0740 


stud 


2N3898 


stud 


S6016B 


ISOstud S6220M 


ISOstud 


RCA107Q 


TO-220AB S2061Q 


TO-220AB 


RTU0750 


stud 


2N3899 


stud 


S6016G 


press-fit 


S6200M 


press-fit 


RCA107M 


TO-220AB S2061M 


TO-220AB 


RTU0760 


stud 


2 N 3899 


stud 


S6016H 


stud 


S6210M 


stud 


RCA107Y 
RCA108A 
RCA108B 
RCA108C 
RCA108D 


TO-220AB S2061Y 
TO-220-AB S2062A 
TO-220AB S2062B 
TO-220AB S2062C 
TO-220AB S2062D 


TO-220AB 
TO-220AB 
TO-220AB 
TO-220AB 
TO-220AB 


S0525G 
S1003RS2 
S1003RS3 
S1006B 


press-fit 2N3870 
TO-220 S2060A 
TO-220 S2061A 
ISOstud S6220A 


press-fit 
TO-220 
TO-220 
ISOstud 


S6025G 
S6025H 
S6035G 
S6035H 


press-fit 
stud 
press-fit 
stud 


2N3873 
2 N 3899 
2N3873 
2N3899 


press-fit 
stud 
press-fit 
stud 


RCA108E 


TO-220AB S2062E 


TO-220AB 


S1006G 


press- 


fit S6200A 


press-fit 


S8025C 


TO-3 


S6410N 


stud 


RCA108F 


TO-220AB S2062F 


TO-220AB 


S1006H 


stud 


S6210A 


stud 


S8025D 


ISOstud S6420N 


ISOstud 


RCA108Q 


TO-220AB S2062Q 


TO-220AB 


S1008B 


ISOstud S6220A 


ISOstud 


S8025G 


press-fit 


S6400N 


press-fit 


RCA108M 


TO-220AB S2062M 


TO-220AB 


S1008G 


press- 


fit S6200A 


press-fit 


S8025H 


stud 


S6410N 


stud 


RCA108Y 


TO-220AB S2062Y 


TO-220AB 


S1008H 


stud 


S6210A 


stud 


S8035G 


press-fit 


S6400N 


press-fit 


RTS0202 


press-fit 


S6200A 


press-fit 


S1010B 


ISOstud S6220A 


ISOstud 


S8035H 


stud 


S6410N 


stud 


RTS0205 


press-fit 


S6200A 


press-fit 


S1010G 


press- 


fit S6200A 


press-fit 


SPS08 


stud 


S6210A 


stud 


RTS0210 


press-fit 


S6200A 


press-fit 


S1010H 


stud 


S6210A 


stud 


SPS18 


stud 


S6210A 


stud 


RTS0220 


press-fit 


S6200B 


press-fit 


S1016B 


ISOstud S6220A 


ISOstud 


SPS020 


stud 


S6210A 


stud 


RTS0230 


press-fit 


S6200D 


press-fit 


S1016G 


press- 


fit S6200A 


press-fit 


SPS28 


stud 


S6210B 


stud 


RTS0240 


press-fit 


S6200D 


press-fit 


S1016H 


stud 


S6210A 


stud 


SPS38 


stud 


S6210D 


stud 


RTS0250 


press-fit 


S6200M 


press-fit 


S1025G 


press- 


fit 2N3870 


press-fit 


SPS48 


stud 


S6210D 


stud 


RTS0260 


press-fit 


S6200M 


press-fit 


S1025H 


stud 


2N3896 


stud 


SPS58 


stud 


S6210M 


stud 


RTS0502 


press-fit 


S6200A 


press-fit 


S1035G 


press 


fit 2N3870 


press-fit 


SPS68 


stud 


S6210M 


stud 


RTS0505 


press-fit 


S6200A 


press-fit 


S1035H 


stud 


2N3896 


stud 


SPS120 


stud 


S6210A 


stud 


RTS0510 


press-fit 


S6200A 


press-fit 


S2003RS2 


TO-220 S2060B 


TO-220 


SPS220 


stud 


S6210B 


stud 


RTS0520 


press-fit 


S6200B 


press-fit 


S2003RS3 


TO-220 S2061B 


TO-220 


SPS320 


stud 


S6210D 


stud 


RTS0530 


press-fit 


S6200D 


press-fit 


S2006B 


ISOstud S6220B 


ISOstud 


SPS420 


stud 


S6210D 


stud 


RTS0540 


press-fit 


S6200D 


press-fit 


S2006G 


press 


fit S6200B 


press-fit 


SPS520 


stud 


S6210M 


stud 


RTS0550 


press-fit 


S6200M 


press-fit 


S2006H 


stud 


S6210B 


stud 


SPS620 


stud 


S6210M 


stud 


RTS0602 


press-fit 


S6200A 


press-fit 


S2008B 


ISOstud S6220B 


ISOstud 


TA-6-3-100TO-66 


S3704A 


TO-66 


RTS0605 


press-fit 


S6200A 


press-fit 


S2008G 


press 


-fit S6200B 


press-fit 


TA6-3-200 TO-66 


S3704B 


TO-66 


RTS0610 


press-fit 


S6200A 


press-fit 


S2008H 


stud 


S6210B 


stud 


TA6-3-400 TO-66 


S3704D 


TO-66 


RTS0620 


press-fit 


S6200B 


press-fit 


S2010B 


ISOstud S6220B 


ISOstud 


TA6-3-500 TO-66 


S3704E 


TO-66 


RTS0630 


press-fit 


S6200D 


press-fit 


S2010G 


press 


-fit S6200B 


press-fit 


TA6-3-600 TO-66 


S3704M 


TO-66 


RTS0640 


press-fit 


S6200D 


press-fit 


S2010H 


stud 


S6210B 


stud 


TA6-3-700 TO-66 


S3704S 


TO-66 


RTS0650 


press-fit 


S6200M 


press-fit 


S2016B 


ISOstud S6220B 


ISOstud 


TA6-6-100 TO-66 


2N3668 


TO-66 


RTS0660 


press-fit 


S6200M 


press-fit 


S2016G 


press 


-fit S6200B 


press-fit 


TA6-6-400 TO-66 


2N3670 


TO-66 


RTU0102 


stud 


S6210A 


stud 


S2016H 


stud 


S6210B 


stud 


TA6-6-500 TO-66 


2N4103 


TO-66 


RTU0105 


stud 


S6210A 


stud 


S2025G 


press 


-fit 2N3871 


press-fit 


TA6-6-600 TO-66 


2N4103 


TO-66 


RTU0110 


stud 


S6210A 


stud 


S2025H 


stud 


2N3897 


stud 


TA6-7-100 TO-48 


S7310B 


TO-48 


RTU0120 
RTU0130 
RTU0140 
RTU0150 


stud 
stud 
stud 
stud 


S6210B 
S6210D 
S6210D 
S6210M 


stud 
stud 
stud 
stud 


S2035G 
S2035H 
S4006B 
S4006G 


press-fit 2N3871 
stud 2N3897 
ISOstud S6220D 
press-fit S6200D 


press-fit 
stud 
ISOstud 
press-fit 


TA6-7-200 TO-48 
TA6-7-400 TO-48 
TA6-7-500 TO-48 
TA6-7-600 TO-48 
TA6-10-1Pn TO-48 


S7310B 
S7310D 
S7310M 
S7310M 
S7310B 


TO-48 
TO-48 
TO-48 
TO-48 
TO-48 


RTU0160 


stud 


S6210M 


stud 


S4006H 


stud 


S6210D 


stud 








39 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 
SILICON CONTROLLED RECTIFIERS (CONT'D) 



Industry 




RCA 




Industry 




RCA 




Industry 




RCA 




Type 


Package 


Type 


Package 


Type 


Package Type 


Package 


Type 


Package Type 


Package 


TA6- 10-200 TO-48 


S7310B 


TO-48 


40216 


TO-48 


S6493M 


TO-48 


2N6074 


Case 77 


2N5757 


TO-5 


TA6- 10-400 TO-48 


S7310D 


TO-48 


40504 


TO-66 


S2710B 


TO-66 


2N6075 


Case 77 


2N5757 


TO-5 


TA6- 10-500 TO-48 


S7310M 


TO-48 


40505 


TO-66 


S2710D 


TO-66 


2N6139 


stud 


2N5569 


stud 


TA6- 10-600 TO-48 


S7310M 


TO-48 


40506 


TO-66 


S2710M 


TO-66 


2N6140 


stud 


2N5570 


stud 


TA6- 15- 100 TO-48 


S6210A 


TO-48 


40553 


TO-66 


S3700B 


TO-66 


2N6141 


stud 


T4111M 


stud 


TA6- 15-200 TO-48 


S6210B 


TO-48 


40554 


TO-66 


S3700D 


TO-66 


2N6142 


stud 


2N5569 


stud 


TA6-15-400TO-48 


S6210D 


TO-48 


40555 


TO-66 


S3700M 


TO-66 


2N6143 


stud 


2N5570 


stud 


TA6-1 5-500 TO-48 


S6210M 


TO-48 


40654 


TO-5 


S2600B 


TO-5 


2N6144 


stud 


T4111M 


stud 


TA6- 15-600 TO-48 
TA6-20- 100 TO-48 
TA6-20-200 TO-48 
TA6-20-400 TO-48 
TA6-20-500 TO-48 
TA6-20-600 TO-48 


S6210M 
S6210A 
S6210B 
S6210D 
S6210M 
S6210M 


TO-48 
TO-48 
TO-48 
TO-48 
TO-48 
TO-48 


40655 
40656 
40657 
40658 
40659 
40680 


TO-5 
TO-5 
TO-5 
TO-5 
TO-5 
stud 


S2600D 
S2620B 
S2620D 
S2610B 
S2610D 
S6420A 


TO-5 
TO-5 
TO-5 
TO-5 
TO-5 
stud 


2N6145 
2N6146 
2N6147 
2N6151 
2N6152 


ISOstud T4120B 
ISOstud T4120D 
ISOstud T4120M 
Case 90 T2800B 
Case 90 T2800D 


ISOstud 
ISOstud 
ISOstud 
TO-220 
TO-220 


TA6-35- 100 TO-48 


S6410A 


stud 


40681 


stud 


S6420B 


stud 


2N6153 


Case 90 


T2800M 


TO-220 


TA6-35-200 TO-48 


S6410B 


stud 


40682 


ISOstud 


S6420D 


ISOstud 


2N6154 


Case 90 


T2802B 


TO-220 


TA6-35-400 TO-48 


S6410D 


stud 


40683 


ISOstud 


S6420M 


ISOstud 


2N6155 


Case 90 


T2802D 


TO-220 


TA6-35-500 TO-48 


S6410M 


stud 


40735 


TO-48 


S7410M 


TO-48 


2N6156 


Case 90 


T2802M 


TO-220 


TA6-35-600 TO-48 


S6410M 


stud 


40749 


TO-48 


S6200M 


TO-48 


2N6157 


press-fit 


T6401 B 


press-fit 










40750 


press-fit S6200B 


press-fit 


2N6158 


press-fit 


T6401D 


press-fit 


TIC106A 


TO-220 


S2060A 


TO-220 


40751 


press-fit S6200D 


press-fit 


2N6159 


press-fit T6401M 


press-fit 


TIC106B 


TO-220 


S2060B 


TO-220 


40752 


press-fit S6200M 


press-fit 


2N6160 


stud 


T6411B 


stud 


TIC106C 


TO-220 


S2060C 


TO-220 


40753 


stud 


S6210A 


stud 


2N6161 


stud 


T6411D 


stud 


TIC106D 


TO-220 


S2060D 


TO-220 


40754 


stud 


S6210B 


stud 


2N6162 


stud 


T6411M 


stud 


TIC106F 


TO-220 


S2060F 


TO-220 


40755 


stud 


S6210D 


stud 


2N6163 


ISOstud T6421B 


ISOstud 


TIC106Y 


TO-220 


S2060Y 


TO-220 


40756 


stud 


S6210M 


stud 


2N6164 


ISOstud T6421D 


ISOstud 


TIC116A 


TO-220 


S122A 


TO-220 


40757 


ISOstud 


S6220A 


ISOstud 


2N6165 


ISOstud T6421 M 


ISOstud 






S2800A 


TO-220 


40758 


ISOstud 


S6220B 


ISOstud 


2N6342 


TO-220 


T2802B 


TO-220 


TIC116B 


TO-220 


S122B 


TO-220 


40759 


ISOstud 


S6220D 


ISOstud 


2N6343 


TO-220 


T2802D 


TO-220 






S2800B 


TO-220 


40760 


ISOstud 


S6220M 


ISOstud 


2N6344 


TO-220 


T2802M 


TO-220 


TIC116C 


TO-220 


S122C 


TO-220 


40833 


TO-5 


S2600M 


TO-5 


2N6345 


TO-220 


T2802N 


TO-220 


TIC116D 


TO-220 


S122D 


TO-220 


40834 


TO-5 


S2620M 


TO-5 


2N6346 


TO-220 


T2800B 


TO-220 


TIC116E 
TIC116F 
TIC116M 
TIC126A 


TO-220 
TO-220 
TO-220 
TO-220 


S122E 
S122F 
S122M 
2 N 6395 


TO-220 
TO-220 
TO-220 
TO-220 


40835 
40867 
40868 
40869 
40888 


TO-5 SODIUM lU-b 
TO-220AB S2800A TO-220AB 
TO-220AB S2800B TO-220AB 
TO-220AB S2800D TO-220AB 

TO-66 S37035F TO-66 


2N6347 
2N6348 
2N6349 
6T06 


TO-220 
TO-220 
TO-220 
TO-66 


T2800D 
T2800M 
T2800N 
T2700B 


TO-220 
TO-220 
TO-220 
TO-66 


TIC126B 


TO-220 


2N6396 


TO-220 


40889 


TO-66 


S3702S 


TO-66 


6T08 


TO-66 


T4700B 


TO-66 


TIC126C 


TO-220 


S6000G 


TO-220 










6T16 


TO-66 


T2700B 


TO-66 


TIC126D 


TO-220 


2N6397 


TO-220 


TRIACS 








6T18 


TO-66 


T4700B 


TO-66 


TIC126E 


TO-220 


S6000E 


TO-220 


2N6068 


Case 77 


T2303F 


TO-5 


6T26 


TO-66 


T2700B 


TO-66 


TIC126F 


TO-220 


2N6349 


TO-220 






T2500Q 


TO-220 


6T28 


TO-66 


T4700B 


TO-66 


TIC126M 


TO-220 


2N6398 


TO-220 


2 N 6068 A 


Case 77 


T2301 F 


TO-5 


6T36 


TO-66 


T2700D 


TO-66 


TY504 


TO-220 


S2062A 


TO-220 


2N6068B 


Case 77 


T2300F 


TO-5 


6T38 


TO-66 


T4700D 


TO-66 


TY1004 


TO-220 


S2062A 


TO-220 


2N6069 


Case 77 


T2303F 


TO-5 


6T46 


TO-66 


T2700D 


TO-66 


TY2004 


TO-220 


S2062B 


TO-220 






T2500Y 


TO-220 


6T48 


TO-66 


T4700D 


TO-66 


TY3004 


TO-220 


S2062C 


TO-220 


2N6069A 


Case 77 


T2301 F 


TO-5 


BR Y41 -100 TO-39 


2N5754 


TO-39 


TY4004 


TO-220 


S2062D 


TO-220 


2N6069B 


Case 77 


T2300F 


TO-5 


BRY4 1-200 TO-39 


2N5755 


TO-39 


TY5004 


TO-220 


S2062E 


TO-220 


2N6070 


Case 77 


2N5754 


TO-5 


BRY4 1-300 TO-39 


2N5756 


TO-39 


TY6004 


TO-220 


S2062M 


TO-220 






T2500A 


TO-220 


BRY4 1-400 TO-39 


2N5757 


TO-39 


TY507 


TO-220 


S122A 


TO-220 


2N6070A 


Case 77 


T2301A 


TO-5 


BRY4 1-500 TO-39 


2N5757 


TO-39 


TY1007 


TO-220 


S122A 


TO-220 


2N6070B 


Case 77 


T2300A 


TO-5 


BRY45-100TO-39 


2N5754 


TO-39 


TY2007 


TO-220 


S122B 


TO-220 


2N6071 


Case 77 


2N5755 


TO-5 


BRY45-200 TO-39 


2N5755 


TO-39 


TY3007 


TO-220 


S122C 


TO-220 






T2500B 


TO-220 


BRY45-300 TO-39 


2N5756 


TO-39 


TY4007 


TO-220 


S122D 


TO-220 


2N6071A 


Case 77 


T2301 B 


TO-5 


BRY45-400 TO-39 


2N5757 


TO-39 


TY5007 


TO-220 


S122E 


TO-220 


2N6071B 


Case 77 


T2300B 


TO-5 


BRY45-500 TO-39 


2N5757 


TO-39 


TY6007 


TO-220 


S122M 


TO-220 


2N6072 


Case 77 


2N5756 


TO-5 


BTR0205 


TO-66 


T2700B 


TO-66 


TY510 


TO-220 


S2800F 


TO-220 






T2500C 


TO-220 


BTR0210 


TO-66 


T2700B 


TO-66 


TY1010 


TO-220 


S2800A 


TO-220 


2N6072A 


Case 77 


2N5756 


TO-5 


BTR0220 


TO-66 


T2700B 


TO-66 


TY2010 


TO-220 


S8200B 


TO-220 


2N6072B 


Case 77 


T2300D 


TO-5 


BTR0230 


TO-66 


T2700D 


TO-66 


TY3010 


TO-220 


S2800C 


TO-220 


2N6073 


Case 77 


2N5756 


TO-5 


BTR0240 


TO-66 


T2700D 


TO-66 


TY4010 


TO-220 


S2800D 


TO-220 






T2500D 


TO-220 


BTR0305 


TO-66 


T2700B 


TO-66 


TY5010 


TO-220 


S2800E 


TO-220 


2N6073A 


Case 77 


T2301D 


TO-5 


BTR0310 


TO-66 


T2700B 


TO-66 


TY6010 
40 


TO-220 


S2800M 


TO-220 


2N6073B 


Case 77 


T2300D 


TO-5 


BTR0320 


TO-66 


T2700B 


TO-66 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 



TRIACS (CONT'D) 














Industry 




RCA 




Industry RCA 




Industry 


RCA 




Type 


Package Type 


Package 


Type Package Type 


Package 


Type 


Package Type 


Package 


BTR0330 


TO-66 


T2700D 


TO-66 


BTV0405 ISOstud T4121B 


ISOstud 


BTX0550 


ISOstud T4120M 


ISOstud 


BTR0340 


TO-66 


T2700D 


TO-66 


BTV0410 ISOstud T4121B 


ISOstud 


BTX0560 


ISOstud T4120M 


ISOstud 


BTR0405 


TO-66 


T4700B 


TO-66 


BTV0420 ISOstud T41 21 B 


ISOstud 


BTX0605 


ISOstud T6421 B 


ISOstud 


BTR0410 


TO-66 


T4700 B 


TO-66 


BTV0430 ISOstud T41 21 D 


ISOstud 


BTX0610 


ISOstud T6421 B 


ISOstud 


BTR0420 


TO-66 


T4700B 


TO-66 


BTV0440 ISOstud T41 21 D 


ISOstud 


BTX0620 


ISOstud T6421B 


ISOstud 


BTR0430 


TO-66 


T4700D 


TO-66 


BTV0450 ISOstud T41 21 M 


ISOstud 


BTX0630 


ISOstud T6421D 


ISOstud 


BTR0440 


TO-66 


T4700D 


TO-66 


BTV0460 ISOstud T41 21 M 


ISOstud 


BTX0640 


ISOstud T6421D 


ISOstud 


BTS0305 
BTS0310 
BTS0320 


press-f 
press-f 
press-f 


t 2N5567 
t 2N5567 
t 2N5567 


press-fit 
press-fit 
press-fit 


BTW1 0-1 00 TO-66 T2700B 
BTW1 0-200 TO-66 T2700B 
BTW1 0-300 TO-66 T2700D 


TO-66 
TO-66 
TO-66 


BTX0650 
BTX0660 
HB26 


ISOstud T6421M 
ISOstud T6421M 
TO-5 2N5755 


ISOstud 
ISOstud 
TO-5 


BTS0330 


press-f 


t 2N5568 


press-fit 


BTW1 0-400 TO-66 T2700D 


TO-66 


HB46 


TO-5 2N5756 


TO-5 


BTS0340 


press-f 


t 2N5568 


press-fit 


BTW1 1-1 00 TO-66 T270OB 


TO-66 


H103SC 


TO-5 T2301 F 


TO-5 


BTS0350 


press-f 


t T4101M 


press-fit 


BTW1 1 -200 TO-66 T2700B 


TO-66 


H103SD 


TO-5 T2301A 


TO-5 


BTS0360 


press-f 


t T4101M 


press-fit 


BTW1 1-300 TO-66 T2700D 


TO-66 


H103SG 


TO-5 T2302F 


TO-5 


BTS0405 


press-f 


t 2N5567 


press-fit 


BTW1 1-400 TO-66 T2700D 


TO-66 


H103SH 


TO-5 T2303F 


TO-5 


BTS0410 


press-f 


t 2N5567 


press-fit 


BTW1 2-100 press-fit 2N5567 


press -fit 


H103SS 


TO-5 T2300F 


TO-5 


BTS0420 


press-f 


t 2N5567 


press-fit 


BTW1 2-200 press-fit 2N5567 


press-fit 


H113SC 


TO-5 T2301A 


TO-5 


BTS0430 
BTS0440 
BTS0450 


press-f 
press-f 
press-f 


t 2N5568 
it 2N5568 
t T4101M 


press-fit 
press-fit 
press-fit 


BTW1 2-300 press-fit 2N5568 
BTW1 2-400 press-fit 2N5568 
BTW1 2-500 press-fit T4101 M 


press-fit 
press-fit 
press-fit 


H113SD 
H113SG 
H113SH 


TO-5 T2301A 
TO-5 T2302A 
TO-5 2N5754 


TO-5 
TO-5 
TO-5 


BTS0460 


press-f 


t T4101M 


press-fit 


BTW13-100stud 2N5569 


stud 


H113SS 


TO-5 T2300A 


TO-5 


BTS0505 


press-f 


t 2N5571 


press-fit 


BTW1 3-200 stud 2N5569 


stud 


H123SC 


TO-5 T2301B 


TO-5 


BTS0510 
BTS0520 
BTS0530 


press-f 
press-f 
press-f 


t 2N5571 
t 2N5571 
t 2N5572 


press-fit 
press-fit 
press-fit 


BTW1 3-300 stud 2N5570 
BTW1 3-400 stud 2N5570 
BTW1 3-500 stud T4111M 


stud 
stud 
stud 


H123SD 
H123SG 
H123SH 


TO-5 T2301B 
TO-5 T2302B 
TO-5 2N5755 


TO-5 
TO-5 
TO-5 


BTS0540 


press-f 


t 2N5572 


press-fit 


BTW14-100TO-66 T4700B 


TO-66 


H123SS 


TO-5 T2300B 


TO-5 


BTS0550 


press-f 


t T4100M 


press-fit 


BTW1 4-200 TO-66 T4700B 


TO-66 


H133SC 


TO-5 T2301D 


TO-5 


BTS0560 
BTS0605 
BTS0610 


press-f 
press-f 
press-f 


t T4100M 
t'2N5441 
t 2N5441 


press-fit 
press-fit 
press-fit 


BTW14-300TO-66 T4700D 
BTW 14-400 TO-66 T4700D 
BTW15-100 press-fit 2N5567 


TO-66 
TO-66 

press-fit 


H133SD 
H133SG 
H133SH 


TO-5 T2301D 
TO-5 T2302D 
TO-5 2N5756 


TO-5 
TO-5 
TO-5 


BTS0620 


press-f 


t 2N5441 


press-fit 


BTW1 5-200 press-fit 2N5567 


press-fit 


H133SS 


TO-5 T2300D 


TO-5 


BTS0630 


press-f 


t 2N5442 


press-fit 


BTW1 5-300 press-fit 2N5568 


press-fit 


H143SC 


TO-5 T2301D 


TO-5 


BTS0640 
BTS0650 
BTS0660 


press-f 
press-f 
press-f 


t 2 N 5442 
t 2N5443 
t 2 N 5443 


press-fit 
press-fit 
press-fit 


BTW1 5-400 press-fit 2N5568 
BTW1 5-500 press-fit T41 01 M 
BTW16-100stud 2N5569 


press-fit 
press-fit 
stud 


H143SD 
H143SG 
H143SH 


TO-5 T2301D 
TO-5 T2302D 
TO-5 2N5756 


TO-5 
TO-5 
TO-5 


BTU0305 


stud 


2N5569 


stud 


BTW1 6-200 stud 2N5569 


stud 


H143SS 


TO-5 T2300D 


TO-5 


BTU0310 


stud 


2N5569 


stud 


BTW1 6-300 stud 2N5570 


stud 


H153SH 


TO-5 2N5757 


TO-5 


BTU0320 
BTU0330 
BTU0340 


stud 
stud 
stud 


2N55§9 
2N5570 
2N5570 


stud 
stud 
stud 


BTW1 6-400 stud 2N5570 
BTW1 6-500 stud T4111M 
BTW18-100 press-fit 2N5571 


stud 
stud 
press-fit 


H163SH 

IT06 

IT08 


TO-5 2N5757 
TO-220 T2850A 
TO-220 T2850A 


TO-5 

TO-220 

TO-220 


BTU0350 


stud 


T4111M 


stud 






IT16 


TO-220 T2850A 


TO-220 


BTU0360 


stud 


T4111M 


stud 


BTW1 8-200 press-fit 2N5571 


press-fit 


IT18 


TO-220 T2850A 


TO-220 


BTU0405 


stud 


2N5569 


stud 


BTW1 8-300 press-fit 2N5572 


press-fit 


IT26 


TO-220 T2850B 


TO-220 


BTU0410 


stud 


2N5569 


stud 


BTW1 8-400 press-fit 2N5572 


press-fit 


IT28 


TO-220 T2850B 


TO-220 


BTU0420 


stud 


2N5569 


stud 


BTW1 8-500 press-fit T41 01 M 


press-fit 


IT36 


TO-220 T2850D 


TO-220 


BTU0430 


stud 


2N5570 


stud 


BTW19-100 press-fit 2N5571 


press-fit 


IT38 


TO-220 T2850D 


TO-220 


BTU0440 


stud 


2N5570 


stud 


BTW1 9-200 press-fit 2N5571 


press-fit 


IT46 


TO-220 T2850D 


TO-220 


BTU0450 


stud 


T4111M 


stud 


BTW1 9-300 press-fit 2N5572 


press-fit 


IT48 


TO-220 T2850D 


TO-220 


BTU0460 


stud 


T4111M 


stud 


BTW1 9-400 press-fit 2N5572 


press-fit 


L2001 M3 


TO-39 T2300B 


TO-39 


BTU0505 


stud 


2N5573 


stud 


BTW1 9-500 press-fit T4101 M 


press-fit 




low profile 




BTU0510 


stud 


2N5573 


stud 


BTW20- 100 stud T6411B 


stud 


L2001M4 


TO-39 T2300B 


TO-39 


BTU0520 


stud 


2N5573 


stud 


BTW20-200 stud T641 1 B 


stud 




low profile 




BTU0530 


stud 


2N5574 


stud 


BTW20-300 stud T641 1 D 


stud 


L2001M5 


TO-39 T2301B 


TO-39 


BTU0540 


stud 


2N5574 


stud 


BTW20-400 stud T641 1 D 


stud 




low profile 




BTU0550 


stud 


T4110M 


stud 


BTW20-500 stud T641 1 M 


stud 


L2001M7 


TO-39 T2302B 


TO-39 


BTU0560 


stud 


T4110M 


stud 


BTX94-400 stud T641 1 D 


stud 




low profile 




BTU0605 


stud 


T641 1 B 


stud 


BTX94-500 stud T641 1 M 


stud 


L2001M9 


TO-39 2N5755 


TO-5 


BTU0610 


stud 


T641 1 B 


stud 


BTX94-600 stud T641 1 M 


stud 




low profile 




BTU0620 


stud 


T641 1 B 


stud 


BTX0505 ISOstud T4120B 


ISOstud 


L4001M3 


TO-39 T2300D 


TO-39 


BTU0630 


stud 


T641 1 D 


stud 


BTX0510 ISOstud T4120B 


ISOstud 




low profile 




BTU0640 


stud 


T641 1 D 


stud 


BTX0520 ISOstud T4120B 


ISOstud 


L4001M4 


TO-39 T2300D 


TO-39 


BTU0650 


stud 


T641 1 M 


stud 


BTX0530 ISOstud T4120D 


ISOstud 




low profile 




BTU0660 


stud 


T641 1 M 


stud 


' BTX0540 ISOstud T4120D 


ISOstud 






41 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 

TRIACS (CONT'D) 



Industry 




RCA 




Industry 


RCA 




Industry 


RCA 




Type 


Package Type 


Package 


Type 


Package Type 


Package 


Type 


Package Type 


Package 


L4001M5 


TO-39 


T2301D 


TO-39 


MAC- 37-7 


press-fit T6401M 


press-fit 


PT410 


press-fit 2N5568 


press-fit 




low profile 




MAC-38-1 


stud T6411B 


stud 


PT415 


press-fit 2N5572 


press-fit 


L4001M7 


TO-39 


T2302D 


TO-39 


MAC-38-2 


stud T641 1 B 


stud 


PT425 


press-fit T6401D 


press-fit 
press-fit 
press-fit 
press-fit 
press-fit 
press-fit 
press-fit 
press-fit 
press-fit 


L4001M9 

MAC-1-1 
MAC- 1-2 
MAC- 1-3 
MAC- 1-4 
MAC- 1-5 


low profile 
TO-39 2N5756 
low profile 
Case 85 2N5567 
Case 85 2N5567 
Case 85 2N5567 
Case 85 2N5567 
Case 85 2N5568 


TO-5 

press-fit 

press-fit 
press-fit 
press-fit 
press-fit 


MAC-38-3 stud T6411B 
MAC-38-4 stud T6411B 
MAC-38-5 stud T6411D 
MAC-38-6 stud T6411D 
MAC-38-7 stud T6411M 
MAC92A-1 TO-92 T2301 F 
MAC92A-2 TO-92 T2301A 
MAC92A-3 TO-92 T2301A 


stud 

stud 

stud 

stud 

stud 

TO-5 

TO-5 

TO-5 


PT430 
PT440 
PT510 
PT515 
PT525 
PT530 
PT540 
PT610 


press-fit T6401D 
press-fit 2N5442 
press-fit T4101M 
press-fit T4100M 
press-fit T6401M 
press-fit T6401M 
press-fit 2N5443 
press-fit T4101M 


MAC- 1-6 


Case 85 


2N5568 


press-fit 


MAC92A-4 TO-92 T2301B 


TO-5 


PT615 


press-fit T4100M 
press-fit T6401M 
press-fit T6401M 
2 TO-5 T2302B 
TO-5 2N5755 


press-fit 

press-fjt 

press-fit 

TO-5 

TO-5 


MAC- 1-7 


Case 85 


T4101M 


press-fit 


MAC92A-5 TO-92 T2301D 


TO-5 


PT625 


MAC- 1-8 


Case 85 


T4101M 


press-fit 


MAC92A-6 TO-92 T2301D 


TO-5 


PT630 


MAC-2-1 
MAC-2-2 


Case 86 
Case 86 


2N5569 
2N5569 


stud 
stud 


MAC93A-1 TO-92 T2301 F 
MAC93A-2 TO-92 T2301A 


TO-5 
TO-5 


Q2001 ms: 
Q2001M2 


MAC-2-3 


Case 86 


2N5569 


stud 


MAC93A-3 TO-92 T2301A 


TO-5 


Q2003P 


TO-5 T2800B 


TO-5 


MAC-5-1 


stud 


2N5569 


stud 


MAC93A-4 TO-92 T2301 B 


TO-5 


Q2004 


ISOstud T4120B 


ISOstud 


MAC-5-2 


stud 


2N5569 


stud 


MAC94A-1 TO-92 T2301F 


TO-5 


Q2006L4 


ISO T2850B 


ISO 


MAC-5-3 


stud 


2N5569 


stud 


MAC94A-2 TO-92 T2301A 


TO-5 




TO-220 


TO-220 


MAC-5-4 


stud 


2N5569 


stud 


MAC94A-3 TO-92 T2301A 


TO-5 


Q2008 


ISOstud T4121B 


ISOstud 


MAC-5-5 


stud 


2N5570 


stud 


MAC94A-4 TO-92 T2301B 


TO-5 


Q2010 


ISOstud T4121B 


ISOstud 


MAC-5-6 


stud 


2N5570 


stud 


MAC40688 ISOstud T6420B 


ISOstud 


Q2015 


ISOstud T4120B 


ISOstud 


MAC-5-7 


stud 


T4111M 


stud 


MAC40689 ISOstud T6420D 


ISOstud 


Q2025 


ISOstud T6421 B 


ISOstud 


MAC-5-8 


stud 


T4111M 


stud 


MAC40690 ISOstud T6420M 


ISOstud 


Q2040 


ISOstud T6420B 


ISOstud 


MAC-10-1 


Case 90 


T2800B 


TO-220 


MAC40797 press-fit T4100M 


press-fit 


Q4001MS2TO-5 T2302D 


TO-5 


MAC- 10-2 


Case 90 


T2800B 


TO-220 


MAC40798stud T4110M 


stud 


Q4001M2 


TO-5 2N5756 


TO-5 


MAC- 10-3 


Case 90 


T2800B 


TO-220 


PT06 


press-fit 2N5567 


press-fit 


Q4003L4 


ISO T2850D 


ISO 


MAC- 10-4 


Case 90 


T2800B 


TO-220 


PT08 


press-fit 2N5567 


press-fit 




TO-220 


TO-220 


MAC- 10-5 


Case 90 


T2800C 


TO-220 


PT10 


press-fit 2N5567 


press-fit 


Q4004 


ISOstud T4121D 


ISOstud 


MAC- 10-6 


Case 90 


T2800D 


TO-220 


PT15 


press-fit 2N5567 


press-fit 


Q4004L4 


ISO T2850D 


ISO 


MAC-10-7 


Case 90 


T2800E 


TO-220 


PT16 


press-fit 2N5567 


press-fit 




TO-220 


TO-220 


MAC- 10-8 


Case 90 


T2800M 


TO-220 


PT18 


press-fit 2N5567 


press-fit 


Q4006 


ISOstud T4121D 


ISOstud 


MAC-11-1 


Case 90 


T2802B 


TO-220 


PT025 


press-fit T6401B 


press-fit 


Q4006L4 


ISO T2850D 


ISO 


MAC-11-2 


Case 90 


T2802B 


TO-220 


PT026 


press-fit 2N5867 


press-fit 




TO-220 


TO-220 


MAC-11-3 


Case 90 


T2802B 


TO-220 


PT028 


press-fit 2N6567 


press-fit 


Q4008 


ISOstud T4121D 


ISOstud 


MAC-11-4 


Case 90 


T2802B 


TO-220 


PTO30 


press-fit T6401B 


press-fit 


Q4010 


ISOstud T4121D 


ISOstud 


MAC-11-5 


Case 90 


T2802C 


TO-220 


PT036 


press-fit 2N5568 


press-fit 


Q4015 


ISOstud T4120D 


ISOstud 


MAC-11-6 


Case 90 


T2802D 


TO-220 


PT038 


press-fit 2N5568 


press-fit 


Q4025 


ISOstud T6421D 


ISOstud 


MAC- 11 -7 


Case 90 


T2802E 


TO-220 


PTO40 


press-fit 2N5441 


press-fit 


Q4040 


ISOstud T6420D 


ISOstud 


MAC-11-8 


Case 90 


T2802M 


TO-220 


PT046 


press-fit 2N5568 


press-fit 


Q5006L4 


ISO T2850D 


ISO 


MAC-35-1 


press-fit 


T6401B 


press-fit 


PT048 


press-fit 2N5568 


press-fit 




TO-220 


TO-220 


MAC-35-2 


press-fit 


T6401 B 


press-fit 


PT056 


press-fit T4101M 


press-fit 


Q5008 


ISOstud T4121M 


ISOstud 


MAC-35-3 


press-fit 


T6401 B 


press-fit 


PT058 
PT066 


press-fit T4101M 
press-fit T4101M 


press-fit 


Q5010 


ISOstud T4121M 


ISOstud 


MAC-35-4 


press-fit 


T6401B 


press-fit 


press-fit 


Q4015 


ISOstud T4120M 


ISOstud 


MAC-35-5 


press-fit 


T6401 D 


press-fit 


PT068 


press-fit T4101M 


press-fit 


Q5025 


ISOstud T6421M 


ISOstud 


MAC-35-6 
MAC-35-7 


press-fit 
press-fit 


T6401 D 
T6401M 


press-fit 
press-fit 


PT110 
PT115 


press-fit 2N5567 
press-fit 2N5571 


press-fit 
press-fit 


Q5040 
Q6008 


ISOstud T6420M 
ISOstud T4121M 


ISOstud 
ISOstud 


MAC-36-1 


stud 


T641 1 B 


stud 


PT125 
PT130 


press-fit T6401 B 


press-fit 


Q6010 


ISOstud T4121M 


ISOstud 


MAC-36-2 


stud 


T641 1 B 


stud 


press-fit T6401B 


press-fit 


Q6015 


ISOstud T4120M 


ISOstud 


MAC-36-3 


stud 


T641 1 B 


stud 


PT140 


press-fit 2N5441 


press-fit 


Q6025 


ISOstud T6421M 


ISOstud 


MAC-36-4 


stud 


T641 1 B 


stud 


PT210 


press-fit 2N5567 


press-fit 


Q6040 


ISOstud T6420M 


ISOstud 


MAC-36-5 


stud 


T641 1 D 


stud 


PT215 


press-fit 2N5571 


press-fit 


Q8025 


ISOstud T6420N 


ISOstud 


MAC-36-6 


stud 


T6411D 


stud 


PT225 


press-fit T6401B 


press-fit 


Q8040 


ISOstud T6420N 


ISOstud 


MAC-36-7 


stud 


T641 1 M 


stud 


PT230 


press-fit T6401B 


press-fit 


SC35A 


stud 2N5569 


stud 


MAC-37-1 


press-fit 


T6401B 


press-fit 


PT240 


press-fit 2N5441 


press-fit 


SC35B 


stud 2N5569 


stud 


MAC-37-2 


press-fit 


T6401B 


press-fit 


PT310 


press-fit 2N5568 


press-fit 


SC35D 


stud 2N5570 


stud 


MAC-37-3 


press-fit 


T6401 B 


press-fit 


PT315 


press-fit 2N5572 


press-fit 


SC35F 


stud 2N5569 


stud 


MAC-37-4 


press-fit 


T6401 B 


press-fit 


PT325 


press-fit T6401D 


press-fit 


SC36A 


press-fit 2N5567 


press-fit 


MAC-37-5 


press-fit 


T6401 D 


press-fit 


PT330 


press-fit T6401D 


press-fit 


SC36B 


press-fit 2N5567 


press-fit 


MAC-37-6 
42 


press -fit 


T6401 D 


press-fit 


PT340 


press-fit 2N5442 


press-fit 


SC36D 


press-fit 2N5568 


press-fit 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 



TR I ACS (CONT'D) 

Industry RCA 

Type Package Type 



SC36F 

SC40A 

SC40B 

SC40B2 

SC40D 

SC40D2 

SC40E 

SC40E2 

SC40F 

SC41A 
SC41B 

SC41D 

SC41E 

SC41F 

SC45A 

SC45B 

SC45B2 

SC45D 

SC45D2 

SC45E 

SC45E2 

SC45F 

SC46A 

SC46B 

SC46D 

SC46E 

SC46F 

SC50A 

SC50B 

SC50B2 

SC50D 

SC50D2 

SC50E 

SC50E2 

SC50F 

SC51A 

SC51B 

SC51D 

SC51E 

SC51F 

SC60B 

SC60B2 

SC60B12 

SC60B13 

SC60B14 

SC60B22 

SC60B23 

SC60D 

SC60D2 

SC60D12 

SC60D13 

SC60D14 

SC60D22 

SC60D23 

SC60E 

SC60E2 

SC60E12 

SC60E13 

SC60E22 

SC60E23 

SC61B 



press-fit 

stud 

stud 

ISOstud 

stud 

ISOstud 

stud 

ISOstud 

stud 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

stud 

stud 

ISOstud 

stud 

ISOstud 

stud 

ISOstud 

stud 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

stud 

stud 

ISOstud 

stud 

ISOstud 

stud 

ISOstud 

stud 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

stud 

ISOstud 

stud 

stud 

stud 

ISOstud 

ISOstud 

stud 

ISOstud 

stud 

stud 

stud 

ISOstud 

ISOstud 

stud 

ISOstud 

stud 

stud 

ISOstud 

ISOstud 

press-fit 



2N5567 
2N5569 
2 N 5569 
T4121B 
2N5570 
T4121D 
T4111M 
T4121M 
2N5569 

2N5567 

2N5567 

2N5568 

T4101M 

2N5567 

2N5569 

2N5569 

T4121B 

2N5570 

T4121D 

T4111M 

T4121M 

2N5569 

2N5567 

2N5567 

2N5568 

T4101M 

2N5567 

2N5573 

2N5573 

T4120B 

2N5574 

T4120D 

2N5573 

T4110M 

T4120M 

2N5573 

2N5571 

2N5571 

2N5572 

T4100M 

2N5571 

T641 1 B 

T6421B 

T641 1 B 

T641 1 B 

T6414B 

T6421B 

T6421B 

T641 1 D 

T6421D 

T641 1 D 

T6411D 

T6414D 

T6421 D 

T6421D 

T641 1 M 

T6421M 

T6411M 

T6411M 

T6421M 

T6421M 

T6401 B 



Package 

press-fit 

stud 

stud 

ISOstud 

stud 

ISOstud 

stud 

ISOstud 

stud 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

stud 

stud 

ISOstud 

stud 

ISOstud 

stud 

ISOstud 

stud 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

stud 

stud 

ISOstud 

stud 

ISOstud 

stud 

stud 

ISOstud 

stud 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

stud 

ISOstud 

stud 

stud 

stud 

ISOstud 

ISOstud 

stud 

ISOstud 

stud 

stud 

stud 

ISOstud 

ISOstud 

stud 

ISOstud 

stud 

stud 

ISOstud 

ISOstud 

press-fit 



Industry 


RCA 




Industry 


RCA 




Type 


Package Type 


Package 


Type 


Package Type 


Package 


SC61B12 


press-fit T6401B 


press-fit 


SC245E 


stud T4111M 


stud 


SC61B13 


press-fit T6401B 


press-fit 


SC245E2 


ISOstud T4121M 


ISOstud 


SC61B14 


press-fit T6404B 


press-fit 


SC245E12 


stud T4111M 


stud 


SC61D 


press-fit T6401D 


press-fit 


SC245E13 


stud T4111M 


stud 


SC61D12 


press-fit T6401D 


press-fit 


SC245E22 


ISOstud T4121M 


ISOstud 


SC61D13 


press-fit T6401D 


press-fit 


SC245E23 


ISOstud T4121M 


ISOstud 


SC61D14 


press-fit T6404D 


press-fit 


SC246B 


press-fit 2N5567 


press-fit 


SC61E 


press-fit T6401M 


press-fit 


SC246B12 


press-fit 2N5567 


press-fit 


SC61E12 


press-fit T6401M 


press-fit 


SC246B13 


press-fit 2N5567 


press-fit 


SC61E13 


press-fit T6401M 


press-fit 


SC246B14 


press-fit T4105B 


press-fit 


SC136A 


TO-202 2N5754 


TO-5 


SC246D 


press-fit 2N5568 


press-fit 


SC136B 


TO-202 2N5755 


TO-5 


SC246D12 


press-fit 2N5568 


press-fit 


SC136D 


TO-202 2N5756 


TO-5 


SC246D13 


press-fit 2N5568 


press-fit 


SC141B 


TO-220 T2800B 


TO-220 


SC246D14 


press-fit T4105D 


press-fit 


SC141D 


TO-220 T2800D 


TO-220 


SC246E 


press-fit T4101M 


press-fit 


SC141E 


TO-220 T2800E 


TO-220 


SC246E12 


press-fit T4101M 


press-fit 


SC141M 


TO-220 T2800M 


TO-220 


SC246E13 


press-fit T4101M 


press-fit 


SC146B 


TO-220 T2800B 


TO-220 


SC250B 


stud 2N5573 


stud 


SC146D 


TO-220 T2800D 


TO-220 


SC250B2 


ISOstud T4120B 


ISOstud 


SC146E 


TO-220 T2800E 


TO-220 


SC250B12 


stud 2N5573 


stud 


SC146M 


TO-220 T2800M 


TO-220 


SC250B13 


stud 2N5573 


stud 


SC240B 


stud 2N5569 


stud 


SC250B14 


stud T4113B 


stud 


SC240B2 


ISOstud T4121B 


ISOstud 


SC250B22 


ISOstud T4120B 


ISOstud 


SC240B12 


stud 2N5569 


stud 


SC250D 


stud 2N5574 


stud 


SC240B13 


stud 2N5569 


stud 


SC250D2 


ISOstud T4120D 


ISOstud 


SC240B22 


ISOstud T4121B 


ISOstud 


SC250D12 stud 2N5574 


stud 


SC240B23 


ISOstud T4121B 


ISOstud 


SC250D13 stud 2N5574 


stud 


SC240D 


stud 2N5570 


stud 


SC250D14 stud T4113D 


stud 


SC240D2 


ISOstud T4121D 


ISOstud 


SC250D22 


ISOstud T4120D 


ISOstud 


SC240D12 stud 2N5570 


stud 


SC250E 


stud T4110M 


stud 


SC240D13 stud 2N5570 


stud 


SC250E2 


ISOstud T4120M 


ISOstud 


SC240D22 


ISOstud T4121D 


ISOstud 


SC250E12 


stud T4110M 


stud 


SC240D23 


ISOstud T4121D 


ISOstud 


SC250E13 


stud T4110M 


stud 


SC240E 


stud T4111M 


stud 


SC250E22 


ISOstud T4120M 


ISOstud 


SC240E2 


ISOstud T4121M 


ISOstud 


SC251B 


press-fit 2N5571 


press-fit 


SC240E12 


stud T4111M 


stud 


SC251B12 


press-fit 2N5571 


press-fit 


SC240E13 


stud T4111M 


stud 


SC251B13 


press-fit 2N5571 


press-fit 


SC240E22 


ISOstud T4121M 


ISOstud 


SC251B14 


press-fit T4103B 


press-fit 


SC240E23 


ISOstud T4121M 


ISOstud 


SC251D 


press-fit 2N5572 


press-fit 


SC241 B 


press-fit 2N5567 


press-fit 


SC251D12 


press-fit 2N5572 


press-fit 


SC241B12 


press-fit 2N5567 


press -fit 


SC251D13 


press-fit 2N5572 


press-fit 


SC241B13 


press-fit 2N5567 


press-fit 


SC251D14 


press-fit T4103D 


press-fit 


SC241 D 


press-fit 2N5568 


press-fit 


SC251E 


press-fit T4100M 


press-fit 


SC241D12 


press-fit 2N5568 


press-fit 


SC251E12 


press-fit T4100M 


press-fit 


SC241D13 


press-fit 2N5568 


press-fit 


SC251E13 


press-fit T4100M 


press-fit 


SC241E 


press-fit T4101M 


press-fit 


SPT06 


stud 2N5569 


stud 


SC241E12 


press-fit T4101M 


press-fit 


SPT08 


stud 2N5569 


stud 


SC241E13 


press-fit T4101M 


press-fit 


SPT10 


stud 2N5569 


stud 


SC245B 


stud 2N5569 


stud 


SPT15 


stud 2N5573 


stud 


SC245B2 


ISOstud T4121B 


ISOstud 


SPT16 


stud 2N5569 


stud 


SC245B12 


stud 2N5569 


stud 


SPT18 


stud 2N5569 


stud 


SC245B13 


stud 2N5569 


stud 


SPT025 


stud T641 1 B 


stud 


SC245B14 


stud T4115B 


stud 


SPT030 


stud T641 1 B 


stud 


SC245B22 


ISOstud T4121B 


ISOstud 


SPT26 


stud 2N5569 


stud 


SC245B23 


ISOstud T4121B 


ISOstud 


SPT28 


stud 2N5569 


stud 


SC245D 


stud 2N5570 


stud 


SPT36 


stud 2N5570 


stud 


SC245D2 


ISOstud T4121D 


ISOstud 


SPT38 


stud 2N5570 


stud 


SC245D12 stud 2N5570 


stud 


SPT40 


stud 2N5444 


stud 


SC245D13 stud 2N5570 


stud 


SPT46 


stud 2N5570 


stud 


SC245D14 stud T4115D 


stud 


SPT48 


stud 2N5570 


stud 


SC245D22 


ISOstud T4121D 


ISOstud 


SPT56 


stud T41 1 1 M 


stud 


SC245D23 


ISOstud T4121D 


ISOstud 


SPT58 


stud T4111M 


stud 



43 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 

TRIACS (CONT'D) 
Industry 



Type 

SPT68 

SPT110 

SPT115 

SPT125 

SPT130 

SPT140 

SPT210 

SPT215 

SPT225 

SPT230 

SPT240 

SPT310 

SPT315 

SPT325 

SPT330 

SPT340 

SPT410 

SPT415 

SPT425 

SPT430 

SPT440 

SPT510 

SPT515 

SPT525 

SPT530 

SPT540 

SPT610 

SPT615 

SPT625 

SPT630 

SPT640 

TA6136 

TA6-200-100 

TA6-201-100 

TA6-200-200 

TA6-201-200 

TA6-200-400 

TA6-202-100 

TA6-202A-100 

TA6-202-200 

TA6-202A-200 

TA6-202-400 

TA6-202A-400 

TA6-203-100 

TA6-203A-100 

TA6-203-200 

TA6-203A-200 

TA6-203-400 

TA6-203A-400 

TA6-204-100 

TA6-204A-100 

TA6-204-200 

TA6-204A-200 

TA6-204-400 

TA6-204A-400 

TA6-205-100 

TA205-200 

TA6-205-400 

TA6-206-100 

TA6-206-200 

TA6-206-400 

TA6-220-200 

TA6-220-400 

TA6-224-200 



Package 

stud 
stud 
stud 
stud 
stud 
stud 
stud 
stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 

stud 
TO-202 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-39 
TO-220 
TO-220 
TO-220 



RCA 

Type Package 

T4111Mstud 
2N5569 stud 
2N5573 stud 
T6411Bstud 
T641 1 B stud 
2N5444 stud 
2N5569 stud 
2N5573 stud 

T6411Bstud 
T6411Bstud 
2N5444 stud 
2N5570 stud 
2N5574 stud 
T6411Dstud 
T641 1 D stud 
2N5445 stud 
2N5570 stud 
2N5574 stud 
T641 1 D stud 
T6411D stud 
2N5445 stud 
T4111Mstud 
T4110Mstud 
T641 1 M stud 
T6411M stud 
2N5446 stud 
T4111M stud 
T4110M stud 
T6411M stud 
T6411M stud 
2N5446 stud 
T2322D TO-202 
T2302A TO-39 
T2303A TO-39 
T2302B TO-39 
T2303B TO-39 
T2302D TO-39 
T2302A TO-39 
T2302A TO-39 
T2302B TO-39 
T2302B TO-39 
T2302D TO-39 
T2302D TO-39 
T2301ATO-39 
T2301ATO-39 
T2301B TO-39 
T2301 B TO-39 
T2301 D TO-39 
T2301D TO-39 
T2300A TO-39 
T2300A TO-39 
T2300B TO-39 
T2300B TO-39 
T2300D TO-39 
T2300D TO-39 
T2303A TO-39 
T2303B TO-39 
T2303D TO-39 
T2302A TO-39 
T2302B TO-39 
T2302D TO-39 
T2500B TO-220 
T2500D TO-220 
T2800B TO-220 



Industry 
Type 

TA6-224-400 

TA6-224-600 

TA6-225-200 

TA6-225-400 

TA6-225-600 

TA6-240-200 

TA6-240-400 

TA6-24 1-200 

TA6-245-200 

TA6- 24 5-400 

TA6-246-200 

TA6- 246-400 

TA6-255-200 

TA6-255-400 

TA6-255-600 

TA6-255A-200 

TA6-255A-200 

TA6-255A-200 

TA6-260-200 

TA6- 260-400 

TA6-26 1-200 

TA6-26 1-400 

TA6-265-200 

TA6-265-400 

TA6-266-200 

TA6- 266-400 

TA6-280-200 

TA6-280-400 

TA6-280-600 

TIC20 

TIC21 

TIC22 

TIC23 

TIC226B 

TIC226D 

TIC236B 

TIC236D 

TIC250B 

TIC250D 

TIC250E 

TIC250M 

TIC252B 

TIC252D 

TIC252E 

TIC252M 

TIC260B 

TIC260D 

TIC260E 

TIC260M 

TIC262B 

TIC262D 

TIC262E 

TIC262M 

TIC270B 

TIC270D 

TIC270E 

TIC270M 

TIC272B 

TIC272D 

TIC272E 

TIC272M 

TDAL113A 

TDAL223A 

TDAL113B 



Package 

TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-220 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-220 
TO-220 
TO-220 
press-fit 
press-fit 
stud 
stud 
TO-220 
TO-220 
TO-220 
TO-220 
press-fit 
press-fit 
press-fit 
press-fit 
stud 
stud 
stud 
stud 
press-fit 
press-fit 
press-fit 
press-fit 
stud 
stud 
stud 
stud 
press-fit 
press-fit 
press-fit 
press-fit 
stud 
stud 
stud 
stud 
TO-39 
TO-39 
TO-39 



RCA 

Type Package 

T2802D TO-220 
T2802M TO-220 
T2800B TO-220 
T2800D TO-220 
T2800M TO-220 
T2850B TO-220 
T2850D TO-220 
T2850D TO-220 
T2850B TO-220 
T2850D TO-220 
T2850B TO-220 
T2850D TO-220 
T6000B TO-220 
T6000D TO-220 
T6000M TO-220 
T6000B TO-220 
T6000D TO-220 
T6000M TO-220 
T2700B TO-66 
T2700D TO-66 
T2700B TO-66 
T2700D TO-66 
T4700B TO-66 
T4700D TO-66 
T4700B TO-66 
T4700D TO-66 
T6000B TO-220 
T6000D TO-220 
T6000M TO-220 
2N5567 press-fit 
2N5568 press-fit 
2N5569 stud 
2N5570 stud 
T2800B TO-220 
T2800D TO-220 
T2800B TO-220 
T2800D TO-220 
T6401 B press-fit 
T6401D press-fit 
T6401M press-fit 
T6401M press-fit 
T6411B stud 
T641 1 D stud 
T641 1 M stud 
T6411Mstud 
T6401B press-fit 
T6401D press-fit 
T6401 M press-fit 
T6401M press-fit 
T6411B stud 
T641 1 D stud 
T6411Mstud 
T6411Mstud 
2N5441 press-fit 
2N5442 press-fit 
2N5443 press-fit 
2N5443 press-fit 
2N5444 stud 
2N5445 stud 
2N5446 stud 
2N5446 stud 
2N5754 TO-39 
2N5756 TO-39 
T2302B TO-39 



Industry RCA 

Type Package Type 

TDAL223B TO-39 T2302D 
TDAL113S TO-39 T2300B 

TDAL2235 TO-39 T2300D 
TJAL602D stud T8411B 
TJAL604D stud T8411D 
TJAL606Dstud T8411M 
TRAL1 1 10D TO-48 2N5569 
TRAL1 1 15D TO-48 2N5573 
TR AL1 1 25D TO-48 T641 1 B 
TRAL1130D ISOstud T6421 B 
TRAL1140D ISOstud T6420B 
TRAL2210D TO-48 2N5570 
TRAL2215D TO-48 2N5574 
TR AL2225D TO-48 T641 1 D 
TRAL2230D ISOstud T6421D 
TRAL2240D ISOstud T6420D 
TX01A10 TO-66 T2700A 
TXC01A20 TO-66 T2700B 
TXC0 1 A40 TO-66 T2700 D 
TXC01 B10 TO-66 T2700A 
TXC01B20 TO-66 T2700B 
TXC0 1 B40 TO-66 T2700 D 



TX CO 1C10 TO-66 
TX CO 1C20 TO-66 
TXC01C40 TO-66 
TXC01D10 TO-66 
TXC01D20 TO-66 



TXC01D40 
TXC01E10 
TXC01E20 
TXC01 E40 
TXC01F10 
TXC01 F20 
TXC01 F40 
TXC03A10 
TXC03A20 
TXC03A40 
TXC03A50 
TXC03B10 
TXC03B20 
TXC03B40 
TXC03B50 
TXC03C10 
TXC03C20 
TXC03C40 
TXC03C50 
TXC03D10 



TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
TO-66 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 
MU22 



TXC03D20 MU22 
TXC03D40 MU22 
TXC03D50 MU22 
TXC03E10 MU22 
TXC03E20 MU22 
TXC03E40 MU22 
TXC03E50 MU22 
TXC03F10MU22 
TXC03F20 MU22 
TXC03F40 MU22 
TXC03F50 MU22 
TXD98A20 stud 
TXD98A40 stud 
TXD98A50 stud 
TXD99A20 stud 



T2700A 

T2700B 

T2700D 

T2700A 

T2700B 

T2700D 

T2700A 

T2700B 

T2700D 

T2700A 

T2700B 

T2700D 

T2500A 

T2500B 

T2500D 

T2500E 

T2500A 

T2500B 

T2500D 

T2500E 

T2500A 

T2500B 

T2500D 

T2500E 

T2500A 

T2500B 

T2500D 

T2500E 

T2500A 

T2500B 

T2500D 

T2500E 

T2500A 

T2500B 

T2500D 

T2500E 

2N5573 

2N5574 

T4110M 

2N5569 



Package 

TO-39 
TO-39 

TO-39 

stud 

stud 

stud 

stud 

stud 

stud 

ISOstud 

ISOstud 

stud 

stud 

stud 

ISOstud 

ISOstud 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-66 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

stud 

stud 

stud 

stud 



44. 



Power Devices Cross-Reference Guide 

(Industry Type to Equivalent RCA Type) 



TRIACS (CONT'D) 

Industry RCA 

Type Package Type 

TXD99A40 stud 2N5570 
TXD99A50stud T4111M 
TXE99A20 stud T641 1 B 
TXE99A40 stud T641 1 D 
TXE99A50stud T6411M 
TYAL113B TO-220 T2500B 
TYAL113C TO-220 T2500B 
TYAL1 13M TO-220 T2801 B 
TYAL116B TO-220 T2500B 
TYAL116C TO-220 T2500B 
TYAL1 1 6M TO-220 T2801 B 
TYAL118B TO-220 T2800B 
TYAL118C TO-220 T2800B 
TYAL118M TO-220 T2802B 
TYAL223B TO-220 T2500D 
TYAL223C TO-220 T2500D 
TYAL223M TO-220 T2801 D 
TYAL226B TO-220 T2500D 
TYAL226C TO-220 T2500D 
TYAL226M TO-220 T2801 D 
TYAL228B TO-220 T2800D 
TYAL228C TO-220 T2800D 
TYAL228M TO-220 T2802D 
TYAL1 1 10B TO-220 T2800B 
TYAL1 1 10C TO-220 T2800B 
TYAL1 1 10M TO-220 T2802B 
TYAL221.0B TO-220 T2800D 
TYAL2210C TO-220 T2800D 
TYAL2210M TO-220 T2802D 



40429 
40430 
40502 
40503 
40525 
40526 
40527 
40528 
40529 
40530 
40531 
40532 
40533 
40534 
40535 
40536 
40575 
40576 
40660 
40661 
40662 



TO-66 

TO-66 

TO-66 

TO-66 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-66 

TO-66 

press-fit 

press-fit 

stud 



T2700B 
T2700D 
T2710B 
T2710D 
T2300A 
T2300B 
T2300D 
T2302A 
T2302B 
T2302D 
T2310A 
T2310B 
T2310D 
T2312A 
T2312B 
T2312D 
T4700B 
T4700D 
T6401 B 
T6401 D 
T6411B 



Package 

stud 

stud 

stud 

stud 

stud 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-220 

TO-66 

TO-66 

TO-66 

TO-66 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-66 

TO-66 

press-fit 

press-fit 

stud 



Industry 
Type 

40663 

40668 

40669 

40670 

40671 

40672 

40684 

40685 

40686 

40687 

40688 

40689 

40690 

40691 

40692 

40693 

40694 

40695 

40696 

40697 

40698 

40699 

40700 

40701 

40702 

40703 

40704 

40705 

40706 

40709 

40711 

40712 

40713 

40714 

40715 

40716 

40717 

40718 

40719 

40720 

40721 

40722 

40727 

40728 

40729 

40730 

40761 

40762 

40766 

40767 

40769 

40770 



RCA 
Package Type 

stud T6411D 
TO-220AB T2800B 
TO-220AB T2800D 
TO-220AB T2800M 
press-fit T6401M 



stud 

TO-5 

TO-5 

TO-5 

TO-5 

ISOstud 

ISOstud 

ISOstud 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

press-fit 

press-fit 

press-fit 

stud 

stud 

stud 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

stud 

stud 

TO-66 

TO-66 

press-fit 

press-fit 

stud 

stud 



T6411M 
T2313A 
T2313B 
T2313D 
T2313M 
T6420B 
T6420D 
T6420M 
T2301 B 
T2301D 
T2316A 
T2316B 
T2316D 
T2306A 
T2306B 
T2306D 
T6406B 
T6406D 
T6406M 
T6416B 
T6416D 
T6416M 
T6407M 
T6407D 
T6407M 
T4106B 
T4106D 
T4116B 
T4116D 
T4706B 
T4706D 
T4107B 
T4107D 
T4117B 
T4117D 



TO-220AB T2806B 
TO-220AB T2806D 



TO-66 

TO-66 

TO-66 

TO-66 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 



T2706B 
T2706D 
T2716B 
T2716D 
T2311B 
T2311D 
T2301A 
T2311A 
T2304B 
T2304D 



Package 

stua 

TO-220AB 

TO-220AB 

TO-220AB 

press-fit 

stud 

TO-5 

TO-5 

TO-5 

TO-5 

ISOstud 

ISOstud 

ISOstud 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

press-fit 

press-fit 

press-fit 

stud 

stud 

stud 

press-fit 

press-fit 

press-fit 

press-fit 

press-fit 

stud 

stud 

TO-66 

TO-66 

press-fit 

press-fit 

stud 

stud 

TO-220AB 

TO-220AB 

TO-66 

TO-66 

TO-66 

TO-66 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 

TO-5 



Industry 
Type 

40771 

40772 

40775 

40776 

40777 

40778 

40779 

40780 

40781 

40782 

40783 

40784 

40785 

40786 

40787 

40788 

40789 

40790 

40791 

40793 

40794 

40795 

40796 

40797 

40798 

40799 

40800 

40801 

40802 

40803 

40804 

40805 

40806 

40807 

40900 

40901 

40902 

40927 

41014 

41015 



RCA 
Package Type 



TO-5 

TO-5 

press-fit 

press-fit 

stud 

stud 

press-fit 

press-fit 

stud 

stud 

press-fit 

press-fit 

stud 

stud 

press-fit 

press-fit 

stud 

stud 

press-fit 

stud 

stud 

press-fit 

stud 

press-fit 

stud 

ISOstud 

ISOstud 

ISOstud 

ISOstud 

ISOstud 

ISOstud 

ISOstud 

ISOstud 

ISOstud 

TO-220AB 

TO-220AB 

TO-220AB 

ISOstud 

TO-220AB 

TO-220AB 



T2305B 

T2305D 

T4105B 

T4105D 

T4115B 

T4115D 

T4104B 

T4104D 

T4114B 

T4114D 

T4103B 

T4103D 

T4113B 

T4113D 

T6405B 

T6405D 

T6415B 

T6415D 

T6404D 

T6414B 

T6414D 

T4101M 

T4111M 

T4100M 

T4110M 

T4121B 

T4121D 

T4121M 

T4120B 

T4120D 

T4120M 

T6421B 

T6421D 

T6421M 

T2850A 

T2850B 

T2850D 

T6420N 

T2500B 

T2500D 



Package 

TO-5 

TO-5 

press-fit 

press-fit 

stud 

stud 

press-fit 

press-fit 

stud 

stud 

press-fit 

press-fit 

stud 

stud 

press-fit 

press-fit 

stud 

stud 

press-fit 

stud 

stud 
press-fit 

stud 

press-fit 

stud 

ISOstud 

ISOstud 

ISOstud 

ISOstud 

ISOstud 

ISOstud 

ISOstud 

ISOstud 

ISOstud 

TO-220AB 

TO-220AB 

TO-220AB 

ISOstud 

TO-220AB 

TO-220AB 



45 



Operating Considerations 



Solid state devices are being designed into an increasing 
variety of electronic equipment because of their high 
standards of reliability and performance. However, it is 
essentia] that equipment designers be mindful of good 
engineering practices in the use of these devices to achieve 
the desired performance. 

This Note summarizes important operating recommen- 
dations and precautions which should be followed in the 
interest of maintaining the high standards of performance of 
solid state devices. 

The ratings included in RCA Solid State Devices data 
bulletins are based on the Absolute Maximum Rating 
System, which is defined by the following Industry Standard 
(JEDEC) statement: 

Absolute-Maximum Ratings are limiting values of opera- 
ting and environmental conditions applicable to any electron 
device of a specified type as defined by its published data, 
and should not be exceeded under the worst probable 
conditions. 

The device manufacturer chooses these values to provide 
acceptable serviceability of the device, taking no responsi- 
bility for equipment variations, environmental variations, and 
the effects of changes in operating conditions due to 
variations in device characteristics. 

The equipment manufacturer should design so that 
initially and throughout life nn absolute-maximum value for 
the intended service is exceeded with any device under the 
worst probable operating conditions with respect to supply- 
voltage variation, equipment component variation, equip- 
ment control adjustment, load variation, signal variation, 
environmental conditions, and variations in device charac- 
teristics. 

It is recommended that equipment manufacturers consult 
RCA whenever device applications involve unusual electrical, 
mechanical or environmental operating conditions. 



Thyristors," and JEDEC Standard RS282 "Standards for 
Silicon Rectifier Diodes and Stacks". 

The metal shells of some solid state devices operate at the 
collector voltage and for some rectifiers and thyristors at the 
anode voltage. Therefore, consideration should be given to 
the possibility of shock hazard if the shells are to operate at 
voltages appreciably above or below ground potential. In 
general, in any application in which devices are operated at 
voltages which may be dangerous to personnel, suitable 
precautionary measures should be taken to prevent direct 
contact with these devices. 

Devices should not be connected into or disconnected 
from circuits with the power on because high transient 
voltages may cause permanent damage to the devices. 

TESTING PRECAUTIONS 

In common with many electronic components, solid-state 
devices should be operated and tested in circuits which have 
reasonable values of current limiting resistance, or other 
forms of effective current overload protection. Failure to 
observe these precautions can cause excessive internal heating 
of the device resulting in destruction and/or possible 
shattering of the enclosure. 

TRANSISTORS AND THYRISTORS 
WITH FLEXIBLE LEADS 

Flexible leads are usually soldered to the circuit elements. 
It is desirable in all soldering operatings to provide some 
slack or an expansion elbow in each lead to prevent 
excessive tension on the leads. It is important during the 
soldering operation to avoid excessive heat in order to 
prevent possible damage to the devices. Some of the heat can 
be absorbed if the flexible lead of the device is grasped 
between the case and the soldering point with a pair of pliers. 



GENERAL CONSIDERATIONS 

The design flexibility provided by these devices makes 
possible their use in a broad range of applications and under 
many different operating conditions. When incorporating 
these devices in equipment, therefore, designers should 
anticipate the rare possibility of device failure and make 
certain that no safety hazard would result from such an 
occurrence. 

The small size of most solid state products provides 
obvious advantages to the designers of electronic equipment. 
However, it should be recognized that these compact devices 
usually provide only relatively small insulation area between 
adjacent leads and the metal envelope. When these devices 
are used in moist or contaminated atmospheres, therefore, 
supplemental protection must be provided to prevent the 
development of electrical conductive paths across the 
relatively small insulating surfaces. For specific information 
on voltage creepage, the user should consult references such 
as the JEDEC Standard No. 7 "Suggested Standard on 



TRANSISTORS AND THYRISTORS 
WITH MOUNTING FLANGES 

The mounting flanges of JEDEC-type packages such as 
the TO-3 or TO-66 often serve as the collector or anode 
terminal. In such cases, it is essential that the mounting 
flange be securely fastened to the heat sink, which may be 
the equipment chassis. Under no circumstances, however, 
should the mounting flange of a transistor be soldered 
directly to the heat sink or chassis because the heat of the 
soldering operation could permanently damage the device. 
Soldering is the preferred method for mounting thyristors; 
see "Rectifiers and Thyristors," below. Devices which cannot 
be soldered can be installed in commercially available 
sockets. Electrical connections may also be made by 
soldering directly to the terminal pins. Such connections may 
be soldered to the pins close to the pin seals provided care is 
taken to conduct excessive heat away from the seals; 
otherwise the heat of the soldering operation could crack the 
pin seals and damage the device. 



46 



Operating Considerations 



During operation, the mounting-flange temperature is 
higher than the ambient temperature by an amount which 
depends on the heat sink used. The heat sink must have 
sufficient thermal capacity to assure that the heat dissipated 
in the heat sink itself does not raise the device mounting- 
flange temperature above the rated value. The heat sink or 
chassis may be connected to either the positive or negative 
supply. 

In many applications the chassis is connected to the 
voltage-supply terminal. If the recommended mounting 
hardware shown in the data bulletin for the specific 
solid-state device is not available, it is necessary to use either 
an anodized aluminum insulator having high thermal con- 
ductivity or a mica insulator between the mounting-flange 
and the chassis. If an insulating aluminum washer is required, 
it should be drilled or punched to provide the two mounting 
holes for the terminal pins. The burrs should then be 
removed from the washer and the washer anodized. To insure 
that the anodized insulating layer is not destroyed during 
mounting, it is necessary to remove the burrs from the holes 
in the chassis. 

It is also important that an insulating bushing, such as 
glass-filled nylon, be used between each mounting bolt and 
the chassis to prevent a short circuit. However, the insulating 
bushing should not exhibit shrinkage or softening under the 
operating temperatures encountered. Otherwise the thermal 
resistance at the interface between device and heat sink 
may increase as a result of decreasing pressure. 

PLASTIC POWER TRANSISTORS AND THYRISTORS 

RCA power transistors and thyristors (SCR's and triacs) 
in molded-silicone-plastic packages are available in a wide 
range of power-dissipation ratings and a variety of package 
configurations. The following paragraphs provide guidelines 
for handling and mounting of these plastic-package devices, 
recommend forming of leads to meet specific mounting 
requirements, and describe various mounting arrangements, 
thermal considerations, and cleaning methods. This informa- 
tion is intended to augment the data on electrical character- 
istics, safe operating area, and performance capabilities in the 
technical bulletin for each type of plastic-package transistor 
or thyristor. 

Lead-Forming Techniques 

The leads of the RCA VERSAWATT in-line plastic 
packages can be formed to a custom shape, provided they are 
not indiscriminately twisted or bent. Although these leads 
can be formed, they are not flexible in the general sense, nor 
are they sufficiently rigid for unrestrained wire wrapping 

Before an attempt is made to form the leads of an in-line 
package to meet the requirements of a specific application, 
the desired lead configuration should be determined, and a 
lead-bending fixture should be designed and constructed. The 
use of a properly designed fixture for this operation 
eliminates the need for repeated lead bending. When the use 
of a special bending fixture is not practical, a pair of 



long-nosed pliers may be used. The pliers should hold the 
lead firmly between the bending point and the case, but 
should not touch the case. 

When the leads of an in-line plastic package are to be 
formed, whether by use of long-nosed pliers or a special 
bending fixture, the following precautions must be observed 
to avoid internal damage to the device: 

1. Restrain the lead between the bending point and the 
plastic case to prevent relative movement between the 
lead and the case. 

2. When the bend is made in the plane of the lead 
(spreading), bend only the narrow part of the lead. 

3. When the bend is made in the plane perpendicular to that 
of the leads, make the bend at least 1/8 inch from the 
plastic case. 

4. Do not use a lead-bend radius of less than 1/16 inch. 

5. Avoid repeated bending of leads. 

The leads of the TO-220AB VERSAWATT in-line 
package are not designed to withstand excessive axial pull. 
Force in this direction greater than 4 pounds may result in 
permanent damage to the device. If the mounting arrange- 
ment tends to impose axial stress on the leads, some method 
of strain relief should be devised. 

Wire wrapping of the leads is permissible, provided that 
the lead is restrained between the plastic case and the point 
of the wrapping. Soldering to the leads is also allowed. The 
maximum soldering temperature, however, must not exceed 
275°C and must be applied for not more than 5 seconds at a 
distance not less than 1/8 inch from the plastic case. When 
wires are used for connections, care should be exercised to 
assure that movement of the wire does not cause movement 
of the lead at the lead-to-plastic junctions. 

The leads of RCA molded-plastic high-power packages 
are not designed to be reshaped. However, simple bending of 
the leads is permitted to change them from a standard 
vertical to a standard horizontal configuration, or conversely. 
Bending of the- leads in this manner is restricted to three 
90-degree bends; repeated bendings should be avoided. 

Mounting 

Recommended mounting arrangements and suggested 
hardward for the VERSAWATT package are given in the data 
bulletins for specific devices and in RCA Application Note 
AN-4142.* When the package is fastened to a heat sink, a 
rectangular washer (RCA Part No. NR231 A) is recommended 
to minimize distortion of the mounting flange. Excessive 
distortion of the flange could cause damage to the package. 
The washer is particularly important when the size of the 
mounting hole exceeds 0.140 inch (6-32 clearance). Larger 
holes are needed to accommodate insulating bushings; 
however, the holes should not be larger than necessary to 
provide hardware clearance and, in any case, should not 
exceed a diameter of 0.250 inch. 



This Note is included in the Appendix to this DATABOOK. 



47 



Operating Considerations 



Flange distortion is also possible il" excessive torque is 
used during mounting. A maximum torque of <S inch-pounds 
is specified. Care should be exercised to assure that the tool 
used to drive the mounting screw never comes in contact 
with the plastic body during the driving operation. Such 
contact can result in damage to the plastic body and internal 
device connections. An excellent method of avoiding this 
problem is to use a spacer or combination spacer-isolating 
bushing which raises the screw head or nut above the top 
surface of the plastic body. The material used for such a 
spacer or spacer-isolating bushing should, of course, be 
carefully selected to avoid "cold How" and .consequent 
reduction in mounting force. Suggested materials for these 
bushings are diallphtalate, fiberglass-filled nylon, or 
fiberglass-filled polycarbonate. Unfilled nylon should be 
avoided. 

Modification of the flange can also result in flange 
distortion and should not be attempted. The package should 
not be soldered to the heat sink by use of lead-tin solder 
because the heat required with this type of solder will cause 
the junction temperature of the device to become excessively 
high. 

The TO-220AA plastic package can be mounted in 
commercially available TO-66 sockets, such as UID 
Electronics Corp. Socket No. PTS-4 or equivalent. For 
testing purposes, the TO-220AB in-line package can be 
mounted in a Jetron Socket No. DC74-I04 or equivalent. 
Regardless of the mounting method, the following 
precautions should be taken: 

1 . Use appropriate hardware. 

2. Always fasten the package to the heat sink before the 
leads are soldered to fixed terminals. 

3 . Never allow the mounting tool to come in contact with 
the plastic case. 

4. Never exceed a torque of 8 inch-pounds. 

5. Avoid oversize mounting holes. 

6. Provide strain relief if there is any probability that axial 
stress will be applied to the leads. 

7. Use insulating bushings to prevent hot-creep problems. 
Such bushings should be made of diallphthalate, fiber- 
glass-filled nylon, or fiberglass-filled polycarbonate. 

The maximum allowable power dissipation in a solid 
state device is limited by the junction temperature. An 
important factor in assuring that the junction temperature 
remains below the specified maximum value is the ability of 
the associated thermal circuit to conduct heat away from the 
device. 

When a solid state device is operated in free air, without a 
heat sink, the steady-state thermal circuit is defined by the 
junction-to-free-air thermal resistance given in the published 
data for the device. Thermal considerations require that a 
free flow of air around the device is always present and that 



the power dissipation be maintained below the level which 
would cause the junction temperature to rise above the 
maximum rating. However, when the device is mounted on a 
heat sink, care must be taken to assure that all portions of 
the thermal circuit are considered. 

To assure efficient heat transfer from case to heat sink 
when mounting RCA molded-plastic solid state power 
devices, the following special precautions should be 
observed: 

1. Mounting torque should be between 4 and 8 inch- 
pounds. 

2. The mounting holes should be kept as small as possible. 

3. Holes should be drilled or punched clean with no burrs or 
ridges, and chamfered to a maximum radius of 0.010 
inch. 

4. The mounting surface should be flat within 0.002 
inch/inch. 

5. Thermal grease (Dow Corning 340 or equivalent) should 
always be used on both sides of the insulating washer if 
orie is employed. The bleed rate of the thermal-grease 
compound should be such that it does not exceed 0.5 
per cent after 24 hours at 200°C. 

6. Thin insulating washers should be used. (Thickness of 
factory-supplied mica washers range from 2 to 4 mils). 

7. A lock washer or torque washer, made of material having 
sufficient creep strength, should be used to prevent 
degradation of heat sink efficiency during life. 

A wide variety of solvents is available for degreasing and 
flux removal. The usual practice is to submerge components 
in a solvent bath for a specified time. However, from a 
reliability stand point it is extremely important that the 
solvent, together with other chemicals in the solder-cleaning 
system (such as flux and solder covers), do not adversely 
affect the life of the component. This consideration applies 
to all non-hermetic and molded-plastic components. 

It is, of course, impractical to evaluate the effect on 
long-term device life of all cleaning solvents, which are 
marketed with numerous additives under a variety of brand 
names. These solvents can, however, be classified with 
respect to their component parts as either acceptable or 
unacceptable. Chlorinated solvents tend to dissolve the outer 
package and, therefore, make operation in a humid atmos- 
phere unreliable. Gasoline and other hydrocarbons cause the 
inner encapsulant to swell and damage the transistor. Alcohol 
is an acceptable solvent. Examples of specific, acceptable 
alcohols are isopropanol, methanol, and special denatured 
alcohols, such as SDA1 , SDA30, SDA34, and SDA44. 

Under certain conditions, dimethyl silicone fluids may 
react chemically with the encapsulant of plastic devices and 
cause damage to the package. These fluids do not cause 
damage when they are contained in materials such as thermal 
compounds. These fluids, however, are unacceptable for use 



48 



Operating Considerations 



as baths or encapsulants for plastic-package devices. In 
addition, plastic-package devices should not be used or stored 
in environments that contain significant amounts of dimethyl 
silicone fluid. 

Care must also be used in the selection of fluxes for lead 
soldering. Rosin or activated rosin fluxes are recommended, 
while organic or acid fluxes are not. Examples of acceptable 
fluxes are: 

1 . Alpha Reliaros No. 320-33 

2. Alpha Reliaros No. 346 

3. Alpha Reliaros No. 7 1 1 

4. Alpha Reliafoam No. 807 

5. Alpha Reliafoam No. 809 

6. Alpha Reliafoam No. 81 1-13 

7. Alpha Reliafoam No. 815-35 

8. KesterNo. 44 

If the completed assembly is to be encapsulated, the 
effect on the molded-plastic transistor must be studied from 
both a chemical and a physical standpoint. 

RECTIFIERS AND THYRISTORS 

A surge-limiting impedance should always be used in 
series with silicon rectifiers and thyristors. The impedance 
value must be sufficient to limit the surge current to the 
value specified under the maximum ratings. This impedance 
may be provided by the power transformer winding, or by an 
external resistor or choke. 

A very efficient method for mounting thyristors utilizing 
the "modified TO-5" package is to provide intimate contact 
between the heat sink and at least one half of the base of the 
device opposite the leads. This package can be mounted to 
the heat sink mechanically with glue or an expoxy adhesive, 
or by soldering, the most efficient method. 

The use of a "self-jigging" arrangement and a solder 
preform is recommended. If each unit is soldered individ- 
ually, the heat source should be held on the heat sink and the 
solder on the unit. Heat should be applied only long enough 
to permit solder to flow freely. For more detailed thyristor 
mounting considerations, refer to Application Note AN3822, 
"Thermal Considerations in Mounting of RCA Thyristors". 

RF POWER TRANSISTORS 
Mounting and Handling 

Stripline rf devices should be mounted so that the leads 
are not bent or pulled away from the stud (heat sink) side of 
the device. When leads are formed, they should be supported 
to avoid transmitting the bending or cutting stress to the 
ceramic portion of the device. Excessive stresses may destroy 
the hermeticity of the package without displaying visible 
damage. 

Devices employing silver leads are susceptible to 
tarnishing; these parts should not be removed from the 



original tarnish-preventive containers and wrappings until 
ready for use. Lead solderability is retarded by the presence 
of silver tarnish; the tarnish can be removed with a silver 
cleaning solution, such as thiourea. 

The ceramic bodies of many rf devices contain beryllium 
oxide as a major ingredient. These portions of the transistors 
should not be crushed, ground, or abraded in any way 
because the dust created could be hazardous if inhaled. 

Operating 

Forward-Biased Operation. For Class A or AB operation, 
the allowable quiescent bias point is determined by reference 
to the infrared safe-area curve in the appropriate data 
bulletin. This curve depicts the safe current/voltage combina- 
tions for extended continuous operation. 

Load VSWR. Excessive collector load or tuning mismatch 
can cause device destruction by over-dissipation or secondary 
breakdown. Mismatch capability is generally included on the 
data bulletins for the more recent rf transistors. 

See RCA RF Power Transitor Manual, Technical Series 
RMF-430, pp 39-41, for additional information concerning 
the handling and mounting of rf power transistors. 

SOLID STATE CHIPS 

Solid state chips, unlike packaged devices, are non- 
hermetic devices, normally fragile and small in physical size, 
and therefore, require special handling considerations as 
follows: 

1. Chips must be stored under proper conditions to insure 
that they are not subjected to a moist and/or contam- 
inated atmosphere that could alter their electrical, 
physical, or mechanical characteristics. After the shipping 
container is opened, the chip must be stored under the 
following conditions: 

A. Storage temperature, 40°C max. 

B. Relative humidity, 50% max. 

C. Clean, dust-free environment. 

2. The user must exercise proper care when handling chips 
to prevent even the slightest physical damage to the chip. 

3. During mounting and lead bonding of chips the user must 
use proper assembly techniques to obtain proper elec- 
trical, thermal, and mechanical performance. 

4. After the chip has been mounted and bonded, any 
necessary procedure must be followed by the user to 
insure that these non-hermetic chips are not subjected to 
moist or contaminated atmosphere which might cause 
the development of electrical conductive paths across the 
relatively small insulating surfaces. In addition, proper 
consideration must be given to the protection of these 
devices from other harmful environments which could 
conceivably adversely affect their proper performance. 



49 



Terms and Symbols 



General 

AQL 
CM 
IMD 
K 

LTPD 

MTBF 
MTTF 
NF 

PD 
pps 

P 

r rr 

prt 
PW 
RMS 

R 0JA 
R 0JC 
R 0JF 
R 0JFA 

r 6jhs 

T A 
T C 
THD 

Tj 



stg 



acceptance quality level 
cross modulation 
intermodulation distortion 
post-radiation neutron- 
damage constant 
lot tolerance per cent 
defective 

mean time between failures 
mean time to failure 
noise factor (or noise figure) 
device dissipation 
pulses per second 
pulse repetition rate 
pulse recurrence time 
pulse width 
root mean square 
thermal resistance, junction- 
to-ambient 

thermal resistance, junction- 
to-case 

thermal resistance, junction- 
to-flange 

thermal resistance, 
junction-to-free air 
thermal resistance, junction- 
to-heat sink 
ambient temperature 
case temperature 
total harmonic distortion 
operating (junction) tempera- 
ture 

lead temperature during 
soldering 
pulse duration 
storage temperature 
efficiency 
conduction angle 
phase angle 

lead radius (for bending) 
torque 
device stud torque 



Power Transistors 



(C) 



Cb'c 
C c 

c cb 



collector-to-base charge- 
generation constant (during 
gamma exposure) 

feedback capacitance 

collector-to-case 
capacitance 

collector-to-base feedback 
capacitance 



c ib 

c ob 

C bo 

E S/b 

f ab 
'ae 

h FE 

h fe 

M 
f hfe 



^pb 
G PB 
G pe 
Gp E 

G VE 
h ib 



''ob 



Vb 



'BEV 



'BM 



common-base input capaci- 
tance 

common-base output capaci- 
tance 

open-circuit common-base 
output capacitance 
reverse-bias second-break- 
down energy 

base (alpha) cutoff frequency 
emitter (beta) cutoff 
frequency 

dc forward-current transfer 
ratio 

common-emitter, small- 
signal, short-circuit, forward- 
current transfer ratio 
magnitude of common- 
emitter, small-signal, short- 
circuit, forward-current 
transfer ratio 
common-emitter, small- 
signal, short-circuit forward- 
current transfer ratio cutoff 
frequency 

gain-bandwidth product 
(unity-gain frequency for 
devices in which gain roll off 
has a —1 slope) 
conversion gain 
small-signal, common-base 
power gain 

large-signal, common-base 
power gain 

small-signal, common-emitter 
power gain 

large-signal, common-emitter 
power gain 

wide-band voltage gain 
common-base, small-signal, 
short-circuit input im- 
pedance 

common-emitter, small-signal, 
short-circuit input im- 
pedance 

common-base, small-signal, 
open circuit output 
admittance 

common-base, small-signal, 
open-circuit reverse-voltage 
transfer ratio 
continuous base current 

base-cutoff current with 
specified voltage between 
collector and emitter 
peak base current 



•c 


continuous collector current 


'CBO 


collector-cutoff current, 


'ceo 


emitter open 
collector-cutoff current, 


'CER 


base open 

collector-cutoff current with 


■ces 


specified resistance between 
base and e/nitter 
collector-cutoff current with 




base-emitter junction short- 


'CEV 


circuited 

collector-cutoff current with 




specified voltage between 




base and emitter 


'CEX 


collector-cutoff current with 




specified circuit between 
base and emitter 


•cm 


peak collector current 


lc<sat) 


collector current at which hpg, 
Vg£(sat), VQ^(sat), and 
switching speeds are measured 


•e 


continuous emitter current 


'ebo 


emitter-cutoff current, collec- 


•em 

'S/b 


tor open 

peak emitter current 

forward-bias, second-break- 




down collector current 


P G 


power gain 


PRT 

Pt 


power rating test 
transistor dissipation at 




specified temperature 


r bb' 


base spreading resistance 


R BB 


base bias resistor 


'bCc 


collector-to-base time constant 


R BE 


external base-to-emitter 




resistance 


R C 


collector resistor 


r CE (sat) 


dc collector-to-emitter 




saturation resistance 


Re(h ie ) 


real part of common-emitter, 
small-signal, short-circuit in- 


R s 


put impedance 
collector-to-emitter saturation 




resistance 


*c 


clamped turn-off switching 




time of an inductive load 


*d 


delay time 
fall time 


tOFF 


turn-off time (storage time + 
fall time) 


l ON 


turn-on time (delay time + 
rise time) 


*r 


rise time 


*s 


storage time 



50 



Terms and Symbols 



EBO 






V 
V 

V 

V C E 
V CEO 

V CE (sat) 



CB 
CBO 



CC 



A OL 
CMRR 

fH 

li 

>IB 



Power Transistors (Cont'd) V 

Ty| clamped inductive 

turn-off time Vp 

Vgg base supply voltage Vpy 

Vgp base-to-emitter voltage 

Vgp(sat) base-to-emitter saturation 

voltage a 

^(BR)CBO collector-to-base breakdown 

voltage, emitter open P 

\/(BR)CEO collector-to-emitter break- 
down voltage, base open 

\/(BR)CEV collector-to-emitter break- 
down voltage with specified 
voltage between base and 
emitter 

V(BR)CEX collector-to-emitter A 

breakdown voltage Aq|_ 

with specified circuit 
between base and emitter 

\/(BR)EBO emitter-to-base breakdown 
voltage, collector open 
collector-to-base voltage 
collector-to-base voltage, MO 

emitter open 'o 

collector supply voltage 'om 

collector-to-emitter voltage 
collector-to-emitter voltage, 'S 

base open "T 

collector-to-emitter satura- 
tion voltage 

Vq£q(sus) collector-to-emitter sustaining 
voltage, base open 

^CER collector-to-emitter voltage 

with specified resistance 
between base and emitter 

Vcer(sus) collector-to-emitter sustaining 
voltage with specified resis- 
tance between base and 
emitter 

^CES collector-to-emitter voltage 

with base-emitter junction 
short-circuited 

Vqev collector-to-emitter voltage 

with specified voltage between 
base and emitter 

VQEy(sus) collector-to-emitter sustaining 
voltage with specified voltage 
between base and emitter 

^CEX collector-to-emitter voltage lp 

with specified circuit between If(aV) 
base and emitter 'F(RMS) 

Vq£_x<sus) collector-to-emitter sustaining lp|\/| 
voltage with specified circuit 
between base and emitter I 

VpB emitter-to-base voltage 



emitter-to-base voltage, 
collector open 
diode forward-voltage drop 
collector-to-emitter reach- 
through (or punch through) 
voltage 

common-base current gain 
(alpha) 

collector-emitter current 
gain (beta) 
collector efficiency 
thermal time constant 



Power Hybrid Operational Amplifiers 



voltage gain 

closed-loop voltage gain 
open-loop voltage gain 
common-mode rejection ratio 
closed-loop bandwidth 
idling current 
input bias current 
input offset current 
quiescent current 
maximum peak quiescent 
current 

short-circuit current 
total power dissipation for 
each output transistor 
common-mode input im- 
pedance 

signal-to-noise ratio 
slew rate 

common-mode input voltage 
range 

input signal voltage swing 
input offset voltage 
offset voltage 
output voltage swing 



°em 

S/N 

SR 

V ICR 

V| N 
V|0 
v offset 

v OUT 

VoutA/|N voltage gain 

Vpp supply-voltage ripple 

rejection ratio 

Vg supply voltage 

Z||y| input impedance 

A l; idling-current drift 



Silicon Rectifiers 

forward current 
average forward current 
rms forward current 
maximum (peak) forward 
current 
FRM repetitive peak forward 

current 



'FSM peak surge (nonrepetitive) 

forward current 
l average forward current, 180- 

degree conduction angle, 

half-sine wave 
lp reverse current 

I r ( av ) average dynamic reverse 

current, single-phase, full- 
cycle 
IrM maximum (peak) reverse 

current 
l rr reverse recovery current 

l 2 t amperes squared-seconds 

(fusing current for rectifier 

protection) 
Pp forward power dissipation 

^FfAV) average forward power 

dissipation 

PpM maximum (peak) forward 

power dissipation 
Pp reverse power dissipation 

R s surge-limiting resistance 

t rr reverse recovery time 

Vp forward voltage drop 

vp instantaneous forward voltage 

drop 
Vp reverse (dc blocking) voltage 

VR(RMS) RMS reverse voltage 
VRRM repetitive peak reverse voltage 

\/RSM nonrepetitive peak reverse 

voltage 
VRWM working peak reverse voltage 



Thyristors 

(Triacs, SCR's, GTO's, and ITR's) 

and Diacs 



di/dt 


rate of change of on-state 




current 


di F /dt 


rate of change of forward 




current (rectifier unit of ITR) 


dv/dt 


critical rate of rise of off- 




state voltage 


'(BO) 


peak breakover current 


'D 


instantaneous off-state 




current 


'DO 


instantaneous off-state 




current, gate open 


■dom 


maximum (peak) off-state 




current, gate open 


■drom 


maximum peak (repetitive) 




off-state current, gate open 


'drx 


dc off-state current, specified 




circuit between gate and 




cathode 



51 



Terms and Symbols 



Thyristors 

(Triacs, SCR's, GTO's, and ITR's 

and Diacs) (Cont'd) 



'drxm 


maximum (peak) repetitive dc 




off-state current with speci- 




fied circuit between gate and 




cathode 


'dxm 


maximum (peak) off-state 




current, specified circuit 




between gate and cathode 


'F 


instantaneous forward current 


•fm 


peak forward current 


'frm 


peak repetitive forward current 


'fsm 


peak surge forward current 




(nonrepetitive) 


>g 


dc gate current 


'g 


pulsed gate trigger current 




(gate drive current) 


'ggM 


maximum gate turn-off 




current 


'gm 


maximum (peak) gate current 


'GR(BR) 


reverse gate breakdown 




current 


'grrm 


maximum (peak) reverse gate 




current 


'gt 


dc gate trigger current 


'HO 


instantaneous holding current, 




gate open 


'ho 


dc holding current, gate open 


'L 


instantaneous latching current 


"L 


dc latching current 


»0 


average dc forward current 


|r 


dc reverse current 


'R 


instantaneous reverse current 


'RO 


instantaneous reverse current. 




gate open 


'rm 


maximum (peak) reverse 




current 


'rrom 


maximum (peak) reverse 




current, gate open 


•rrx 


dc reverse current, specified 




circuit between gate and 




cathode 


'rrxm 


maximum (peak) reverse 




current, specified circuit 




between gate and cathode 


l 2 t 


amperes squared-seconds 




(fusing current for device 




protection) 


»T 


instantaneous on-state current 


•t 


dc on-state current 


'tgqm 


maximum (peak) on-state cur- 




rent gate-turn-off capability 


'T(AV) 


average on-state current 



'TM 

'TM(pulse) 

'T(RMS) 

'trxm 



'TSM 

'txm 
p D 

P D(AV) 
P G(AV) 
P GM 

P GRM 



P T(AV) 

*d 
tf 

*gq 

tgfrec) 



V (BO) 
|- +V (BO)| 



v (BO)0 

V D 
V D 
V DM 

V DROM 

V DRXM 

v DSOM 

V DSXM 



maximum (peak) on-state 
current 

maximum (peak) pulse 
on-state current 
rms on-state current 
maximum (peak) (repetitive) 
on-state current, specified 
operating circuit 
maximum (peak) surge (non- 
repetitive) on-state current 
maximum (peak) on-state cur- 
rent, specified operating circuit 
device dissipation 
average device dissipation 
average gate power dissipation 
maximum (peak) gate power 
dissipation 

maximum (peak) reverse gate 
power 

on-state power dissipation 
average on-state power 
dissipation 
delay time 
fall time 

gate controlled turn-off time 
(t s + t f ) 

gate recovery time 
gate controlled turn-on time 
(td + t r ) 

circuit commutated turn-off 
time (t rr +t g(rec) ) 
rise time 

reverse recovery time 
storage time 
breakover voltage 

|~ V (BO)| 

breakover voltage symmetry 
(for diacs) 

instantaneous breakover 
voltage, gate open 
dc off -state voltage 
instantaneous off-state voltage 
maximum (peak) dc off- 
state voltage 

maximum (peak) (repetitive) 
off-state voltage, gate open 
maximum (peak) (repetitive) 
off-state voltage, specified cir- 
cuit between gate and cathode 
maximum (peak) (nonrepeti- 
tive) off-state voltage, gate 
open 

maximum (peak) (nonrepeti- 
tive) off -state voltage, speci- 
fied circuit between gate 
and cathode 



V DX instantaneous off-state vol- 

tage, specified circuit be- 
tween gate and cathode 

Vqx dc off-state voltage, specified 

circuit between gate and 
cathode 

vp instantaneous forward voltage 

drop 

Vp|y| maximum (peak) forward 

voltage 

Vq dc gate voltage 

Vqk dc gate-to-cathode voltage 

V qq gate turn-off voltage 

Vqp dc reverse gate voltage 

^GR(BR) reverse 9 ate breakdown 
voltage 

^GRM maximum (peak) gate reverse 

voltage 

^GRRM Maximum (peak) repetitive 
reverse gate vottage 

Vqj dc gate trigger voltage 

Vp dc reverse voltage 

\/RROM maximum (peak) (repetitive) 
reverse voltage, gate open 

VRRXM maximum (peak) (repetitive) 
voltage, specified circuit 
between gate and cathode 

VRSOM maximum (peak) (nonrepeti- 
tive)reverse voltage, gate open 

VrSXM maximum (peak) (nonrepeti- 
tive) reverse voltage, specified 
circuit between gate and 
cathode 

Vpx dc reverse voltage, specified 

circuit between gate and 
cathode 

\/RXM maximum (peak) reverse 

voltage, specified circuit 
between gate and cathode 

vj instantaneous on-state voltage 

V -p dc on-state voltage 

vj(|) initial on-state voltage 

Vj|y| maximum (peak) dc on-state 

voltage 

ZQg gate source impedance 

A V± dynamic breakback voltage 



52 



Power Transistors 

Technical Data 



S3 



POWER TRANSISTORS 



2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270, 
2N2405, 2N3053, 2N3053A, 40366, 40389, 40392, 41502 

Low-Power Silicon N-P-N Planar Transistors 

For Small-Signal Applications In Industrial and Commercial Equipment 



These RCA types are silicon n-p-n planar 
transistors intended for a variety of small- 
signal and medium-power applications. 
They feature exceptionally high collector- 
to-emitter sustaining voltage, low leakage 
characteristics, high switching speeds, 
and high pulse beta (hpE)- 



RCA-2N2102 is a direct replacement for 
the 2N1613. RCA-2N2405 is a direct 
replacement for the 2N1893. All of these 
devices are supplied in the JEDEC TO-39 
hermetic package. 

TERMINAL DESIGNATIONS 




Features: 

■ Planar construction for low noise and 
low leakage 

■ Low output capacitance 

■ Low saturation voltages 

Additional Features for 40366: 

■ High reliability assured by five pre- 
conditioning steps 

■ Group A test data included in data 
sheet. 



Maximum Ratings, Absolute-Maximum Values: 

* COLLECTOR-TO-BASE VOLTAGE V CBO 

COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: 

With external base-to-emitter resistance (Rbe' ^ 10 ^ V CER' SUS ) 
With base-emitter junction reverse-biased Vqe\/(sus) 

* With base open VceqIslis) 

* EMITTER-TO-BASE VOLTAGE V EBO 

* COLLECTOR CURRENT Iq 

* TRANSISTOR DISSIPATION: P T 

At case temperatures up to 25°C 

At free-air temperatures up to 25°C 

At temperatures above 25°C 

* TEMPERATURE RANGE: 

Storage T stg 

Operating (Junction) Tq 

* LEAD TEMPERATURE (During soldering): 

At distance from seating plane for 10 s max. 

3*1/16 in. (1.58 mm) T L 

* 2N-Series types in accordance with JEDEC registration data 

* 7 for 40392. "3.5 for 40389 



2N3053 
2N2102 2IM1613 40389 

2N697 2N699 40366 2N1711 2N1893 2N2270 2N2405 40392 2N3053A 41502 



120 



-65 to +175 
-65 to +175 



3 
0.8 



120 

100 
120 
80 



3 
0.8 



60 



120 

140 

120 

90 

7 

1 



Derate linearly to maximum temperature ■ 



-65 to 200 
-65 to 200 



60 

50 
60 
40 
5 
0.7 



80 

70 
80 
60 
5 
0.7 



3 

0.8 



J? 

~2K> 
5 200 

k iao 
i wo 

£ 140 
| 120 
| IOO 

V eo 

h 

s *° 


COLLECTOR-TO-EMITTER VOLTAGE (V C E>'IOV 
































































0^ 




'N 
















♦5r 








\ 












& 


q.^ 


' 


■v 


\\ 










fk 


u 


<r 




-"- 


■-, 


s 




. t 




'^ 






"• 


o, 
















\ 


1 


ffl 








































1 



























1 




0.1 








K> 




IOO 




000 



COLLECTOR CURRENT (I,;)- 



Fig. 1 - Typical dc beta characteristics 
for 2N699, 2N1613, 2N2102, 
2N2270, 41502. 




Fig. 2 - Typical dc beta characteristics 
for2N1711. 



1 


COMMON-EMITTER CIRCUIT, BASE INPUT 
COLLECTOR-TO-EMITTER VOLTS (VceI'IO 








1 | 


g 
















1 








| ; 


X 180- 
















,^V)RE IT*. 








j i 














*0 








°c 








5 










* 












h 






J 120- 








f>\ 












s 


f* 






[ 








s 


y 






^ 




. 


\ 


\ 




i 




,^ 


' 




-■ 














<* 


\ 




I 
1 




* Z: 


> 


' 












1 




















-" 


















[3? 










u 20 = 

° o 






























































i 



COLLECTOR MILLIAMPERES (Ic> 

Fig. 3 - Typical dc beta characteristics 
for 2N 1893, 2N2405. 



54 



POWER TRANSISTORS 



2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102 , 2N2270, 
2N2405, 2N3053, 2N3053A, 40366, 40389, 40392, 41502 



ELECTRICAL CHARACTERISTICS, At Case Temperature (Trf 


■ 25° C unless otherwise specified 
















CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 




VOLTAGE 


CURRENT 








2N2102 








Vdc 


mA dc 


2N697 


2N699 


2N 


1613 


40366 


2N1711 


UNITS 


VCB 


VgE 


•c 


'R 


MIN 


TYP 


MAX 


MIN. 


MAX. 


MIN 


MAX. 


MIN 


MAX. 


MIN 


MAX 




* Collector Cutoff Current: 




30 








_ 


0.01 


1 




















With emitter open 


'CBO 


60 








- 


- 


- 


- 


0.05 


_ 


0.01 


_ 


0.002 


_ 


0.01 


<UA 


AtT c = 150°C 


60 








- 


- 


- 


- 


- 


- 


10 


- 


2 


- 


10 


* Emitter Cutoff Current: 




































V EB = 5V 


'ebo 











- 


- 


- 


- 


0.05 


- 


0.01 


- 


0.002 


- 


0.005 


AA 








10 


0.01 




- 


- 


- 


- 


- 


- 


- 


10 


_ 


20 


- 










10 


0.1 




- 


- 


- 


- 


- 


20 


_ 


20 


_ 


35 


_ 




DC Forward-Current Transfer Ratio 


"FE 




10 


108 




- 


- 


- 


- 


- 


35 


- 


35 


_ 


75 


_ 










10 


150» 




40 


- 


120 


40 


120 


40 


120 


40 


120 


100 


300 










10 


500» 




- 


- 


_ 


_ 


_ 


20 


_ 


25 


_ 


40 


_ 




At T C = -55°C 




10 


10 s 




- 


- 


- 


- 


- 


20 


- 


20 


- 


35 


_ 


;ollector-to-Emitter 




































Reachthrough Voltage: 


Vrt 










- 


- 


_ 


_ 


_ 


_ 


_ 


120 


_ 


75 


_ 


V 


V EB = 1.5 V, l E -0 




































Itollector-to-Base 




































Breakdown Voltage: 


v (BR)CB0 






0.1 




60 


75 


- 


120 


- 


75 


- 


120 


_ 


75 


_ 


V 


With emitter open 




































Emitter-to-Base 




































Breakdown Voltage: 


VIBR1EBO 











5 


7.5 


_ 


- 


_ 


7 


_ 


7 


_ 


7 


_ 


V 


l E = 0.1 mA 




































Collector-to-Emitter 




































Sustaining Voltage: 


v CEO' susl 






100 a 





_ 


- 


- 


- 


- 


_ 


_ 


65 


_ 


_ 


_ 


V 


With base open 




































With external base-to-emitter 




































resistance (R b e' = 10 ^2 


V CER (sus) 






100 a 




40 


60 


- 


80 


- 


50 


- 


80 


- 


50 


- 


V 


Base-to-Emitter Saturation 




































Voltage 


V BE (sat) 






1508 


15 


- 


1 


1.3 


- 


1.3 


- 


1.3 


- 


1.1 


_ 


1.3 


V 


Collector-to-Emitter Saturation 




































Voltage 


V CE (sat) 






1508 


15 


- 


0.7 


1.5 


- 


5 


- 


1.5 


- 


0.5 


- 


1.5 


V 


Common-Emitter, Small-Signal, 
Forward-Current Transfer Ratio 
(f = 1 kHz) 


h fe 




5 
10 


1 
5 




- 


- 


- 


35 
45 


100 


30 
35 


100 
150 


30 
35 


100 
150 


50 
70 


200 
300 




Magnitude of Common-Emitter, 




































Small-Signal, Forward Currant 


Ihfel 




10 


50 




2.5 


5 


- 


2.5 


'- 


3 


- 


3 


_ 


3.5 


_ 




Transfer Retio (f - 20 MHz) 




































Input Resistance: 
f = 1 kHz 


hib 


5 
10 




1 
5 




- 


- 


- 


20 


30 
10 


24 
4 


34 
8 


24 
4 


34 
8 


24 
4 


34 
8 


n 


Small-Signal Reverse Voltage 




5 




1 




- 


_ 


_ 


_ 


3x10-4 


_ 


3x10-4 


_ 


3x10-4 


_ 


5x10-4 


Transfer (Feedback) Ratio: 


h rb 


10 




1 




- 


_ 


_ 


_ 


_ 


_ 


3x10-4 


_ 


_ 


_ 


_ 


f = 1 kHz 




10 




5 




- 


- 


_ 


_ 


3X10- 4 


_ 


_ 


_ 


3x10-4 


_ 


5x10-4 


Output Conductance: 


n ob 


5 




1 




- 


- 


_ 


0.05 


0.5 


0.05 


0.5 


0.01 


0.5 


0.05 


0.5 




f - 1 kHz 


10 




5 




- 


- 


- 


- 


1 


0.05 


0.5 


0.01 


1 


0.05 


0.5 


(Jmho 


Output Capacitance: 
l E -0 


Cob 


10 








- 


20 


35 


- 


20 


- 


25 


- 


15 


- 


25 


pF 


Input Capacitance: 
V EB = 0.5V 


Cib 











- 


- 


- 


- 


- 


- 


80 


- 


80 


- 


80 


pF 


Gain-Bandwidth Product 


f T 










50 


100 


- 


50 


- 


60 


- 


60 


_ 


70 


_ 


MHz 


Noise Figure: 




































Circuit Bandwidth (BW) - 1 Hz 




































Reference signal freq. = 1 kHz 




































Generator resistance (Rq) ■ 


NF 


10 




0.3 


























dB 


510ni2N1613,2N1711) 












_ 


_ 


.. 


_ 


_ 


_ 


12 


_ 






8 




1 Kn<2N2102l 












- 


- 


- 


- 


- 


- 


- 


- 


6 


- 


- 




Saturated Switching Time 


td+t r +tf 










- 


- 


- 


- 


- 


- 


30 


- 


30 


- 


_ 


TJS 


Thermal Resistance: 




































Junction-to-case 


Rfljn 










- 


_ 


75 


_ 


75* 


_ 


58.3* 


_ 


35* 


_ 


58.3* 


°C/W 


Junction-to -ambient 


RfljA 










- 


- 


250 


- 


250* 


- 


219* 




- 


175* 


" 


219* 



*2N-Series types in accordance with JEOEC registration data 

8 Pulsed, pulse duration - 300 Us, duty factor -2% (1.8% for 2N2102 only). 



55 



POWER TRANSISTORS 



2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270, 
2N2405, 2N3053, 2N3053A, 40366, 40389, 40392, 41502 



ELECTRICAL CHARACTER ISTICS,/4f Case Temperature (Tq) 


= 25° C unless otherwise specified. 




















CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
mAdc 


2N1893 


2N2405 


2N2270 


2N3053 
40389 
40392 


2N30S3A 


41502 


VCB 


VCE 


■c 


<B 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN.lMAX 


Collector Cutoff Current: 
With emitter open 


'CBO 


15 
30 
60 
90 








- 


0.01 


- 


0.01 


- 


0.05 


- 


0.25 


- 


- 


- 


2 


IJA 


At T C = 1 50°C 


60 
90 








- 


15 


- 


10 


- 


50 


- 


- 


- 


- 


- 


~ 


Emitter Cutoff Current: 

V EB = 5 V,(4 Vfor 2N3053, 
2N3063A) 


'EBO 











- 


0.01 


- 


0.01 


- 


0.1 


- 


0.25 


- 


0.25 


- 


- 


fJA 


DC Forward-Current Transfer Ratio 


hFE 




10 
10 
10 
10 


0.1 

1 

10 a 
150 a 




35 
40 


120 


20 

35 
60 


200 


30 
50 


200 


50 


250 


50 


250 


20 


- 




At T C = 55°C 




10 


10 a 




20 
























Collect or -to-Base 

Breakdown Voltage: 
With emitter open 


V (BR)C80 






0.1 




120 


" 


120 


- 


60 


- 


60 


" 


80 


- 


- 


" 


V 


Emitter-to-Base 

Breakdown Voltage: 
l E = 0.1 mA 


VIBRIEBO 











7 


" 


7 


" 


7 


- 


5 


- 


5 


- 


4 


- 


V 


Collector-to-Emitter 
Sustaining Voltage: 
With base open 


V CE0 (sus) 






100 3 
30 a 
0.1 a 






80 


" 


90 
90 


- 


45 


- 


40 


" 




- 


30 


" 


V 


With external base-to-emitter 
resistance (R BE > = 10 ^ 
= 500O 


V CE R<SUs) 






1003 
100 a 




100 


" 


140 
120 


" 


60 


- 


50 


" 


70 


- 


' 


" 


V 


Base-to-Emitter Saturation 
Voltage 


V BE (satl 






150 3 
50 a 


15 
5 


~ 


1.3 
0.9 


- 


1.1 
0.9 


" 


0.9 


- 


1.4 


0.6 


1 


- 


_ 


V 


Collector-to-Emitter Saturation 
Voltage 


V CE (sat) 






1503 
503 


15 
5 


" 


5 

1.3 


- 


0.5 
0.2 


" 


1.2 


" 


1.7 


- 


0.3 


: 


1.5 


V 


Base-to-Emitter Voltage 


VBE 




2.5 

10 


150 

^5&> 




- 


- 


- 


- 


- 


- 


- 


1.7 


- 


1 


- 


2.5 


V 


* Common Emitter, Small-Signal, 
Forward Current Transfer Riatto 
f = 1 kHz 
= 1 kHz 
- 1 kHz 
= 20 MHz 


hf 
T e 




5 

5 

10 

10 


1 

5 

5 

50 




30 

45 

2.5« 


100 


50 
6 


275 


5 
5 
5* 


275 


5* 


_ 


5 


_ 


- 


- 




• Input Resistance: 
f = 1 kHz 


"ib 


5 

10 




1 

5 




20 
4 


30 
8 


24 
4 


34 
8 














- 


- 


n 


* Small Signal Reverse Voltage 
Transfer (Feedback) Ratio: 
f - 1 kHz 


n rb 


5 
10 




1 

5 




- 


1.25 x 
10" 4 

1.25 x 
10" 4 


" 


3x 10" 4 
3x1 0" 4 














- 


- 




" Output Conductance: 
f = 1 kHz 


h ob 


5 
10 




1 
5 




- 


0.5 
0.5 


- 


0.5 
0.5 














- 


- 


jjmho 


" Output Capacitance: 
l E = 


Cob 


10 








- 


15 


- 


15 


" 


15 


" 


15 


- 


15 


- 


25 


pF 


* Input Capacitance: 
V EB = 0.5 V 


Cib 











" 


85 


" 


85 


" 


80 


- 


80 


- 


80 


- 


80 


pF 


Gain-Bandwidth Product 


*T 










50 


- 


120 


- 


100 


- 


100 


- 


100 


- 


- 


- 


MHz 


Noise Figure: 

Circuit Bandwidth (BW) = 1 Hz 
Reference signal freq. = 1 kHz 
Generator resistance (Rq) = 
500 i7 (2N2405) 
1 kQ (2N2270) 


NF 


10 




0.3 




- 


" 


- 


6 


" 


10* 


" 


- 


- 


- 


- 


- 


dB 


* Saturated Switching Time 


td + tr+<f 


































T)s 


Thermal Resistance: 
Junction-to-case 


R0JC 












58.3 




35 


_ 


35 


_ 


35* 


_ 


35 


_ 


58.3 


°C/W 


Junction-to-ambient 


R0JA 


1 






- 


219 


- 


175 | - 


175 


- 


175" 


- 


175 


- 


219 





2N-Series types in accordance with JEDEC registration data. 



a Pulsed; pulse duration = 300 us, duty factor ^2%. 



56 



POWER TRANSISTORS 



2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270, 
2N2405, 2N3053, 2N3053A, 40366, 40389, 40392, 41502 




I0 c ° °I00 

COLLECTOR- TO- EMITTER VOLTAGE IV CE — V 

Fig. 4 - Maximum operating areas for 2N2405. 



92CS-I5736RI 



l0 8 
6 

4 

2 | 


CASE 


TEMPERATURE (T C )»25°C 














(CURVt MUSI DC. UtKAl 

WITH INCREASE IN JEMI 


tU LINtAK 

'Erature; 


ly|||||||||| i 










Ijl 














||II* 
















liIIi 


< 

I I 
O 8 
H ■ 

— 6 = 

1- 
z 

UJ 4 : 

OC 

OC 

O 

OC 2: 
O 


- j|||| ;l. 1 'I T; mill 1 1 1 Hill 










11+1 


s? T : : : 


ic max. yinn 

CONTINUOUS) 


tWPJLSE OPERATION*iiMlat |,, 


ORMA 
OWER 
ULTIF 


LizEb|l||H|D 




IT 


j ,| L 1 


1 1 1 1 1 1 1 < 


III 


inlMllllllll P 
jg^WM 


LIER JH 






SS = r-- 


















4tt 




1IIII 








tor 




yj||[j^3 


6pi 




:i;: 


r= 








EtItoiF 2 




~ !:!:hfc£S 


~~ 


rr~ 




o 

UJ 

-J 0.1 = 

O 8: 
O 

6 - 

4: 

2 = 


ttrtttrt 


1H 


6 


r : - 


""l 'II' i i rUtr 




IMilfrHul-rr 


! t 


:ibik 

j_! 1 _ 1, 1 








=tf NC 


R oinui.c urn 
>NREPETITIVE^ffi 

LSE ill 




ijirpTh 


; S 


.iij.'4''-'p 


^m 






till 
— 


trrt 


^? ;, fWtttfflr 










1 


SlVCEO (MAX.)-40 V (2N3653)i 

IrrffifftttHfftfiUIIIIIIIIMIIIIillllllllllir 






^44; 


■iir 








a 


V C E0 (MAX.) -60 V ( 


2N3053A) 




jijljl j 


'U'^'LI r 


: l: 


■ 




0.01 


m 


-rrtr 

T'" 


i 


i 


+~u 




4+4 




^jjjjn|t|:|d[ 


fptPrr 


"±ppi 


,-j [I: 










tttir 


1 ! 1 illl 


iiii iiiiiiiiiiiii 


"|l ' 1 : 1 1 


"4'T"'"' 





I 2 4 6 8 |o 2 4 6 8 1 00 2 

COLLECTOR-TO-EMITTER VOLTAGE (V C e) — V 



Fig. 5 — Maximum operating areas for 2N3053 and 2N30S3A. 



4 6 8 I000 



92CS-27989 



COLLECTOR-TO-EMITTER VOLUME (V^I'IOV | 














- 200 

In. 


















Ls^ 










































| 129 

t wo 

s so 










J$\ 








-is 


















^ 






















~~< 


#1 




































































































































\ 
















-2 






8 



COLLECTOR CURRENT II C > — mA S2CS-I2J5HII 

Fig. 6 — Typical dc beta characteristics for 
2N3053, 2N3053A, 40389, 40392. 




0.5 0.6 07 0.8 0.9 I II 12 1.3 14 

BASC-TO-EMITTER VOLTAGE 1V BE ) — V 

Fig. 7 ■ Typical transfer characteristics 
for 2N1613, 2N1711, 2N1893, 
2N2102, 2N2405. 




Fig. 8 - Typical transfer characteristics for 
2N3053, 2N3053A, 40389, 40392. 



COLLEC 

miliilil 


TOR 


TO- 


El 


•it 


TER 

Fgg 


VOLTAOE (Vcfrl-IO 


v[|||||||l||||||||||||l|| 




WWII; 

10 

« • 

I 

i 

3 « 
1 

2 














1 1 1 1 1 1 1 1 1 1 II 1 II j^lTflTW 
















|!|||||||||||Sj||||||j|| 





















































Fig. 9 ■ Typical input characteristics for 

2N3053, 2N3053A, 40389, 40392. 



57 



POWER TRANSISTORS 



2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270, 
2N2405, 2N3053, 2N3053A, 40366, 40389, 40392, 41502 



1000 














































^\ofi^ 




yl* 














3" 2 




s> 


* 


> 




T» 












K ioo 


7 


Y 


** 


















200j 


tA 


f 






















t 


T 


r 




















r 




















L ~I — I — 


\ 


\ 


















200 














a 


c, 












■ 






1 ITS 

— HiSo^ 


























— \—\J»- 






















1 r 


i 






« 


,IN- 


Ml 


OWI 


)TH 


PW 


KXK 


T l T (McHOO 










1 1 1 1 


1 1 




c 









2 





3 


10 


4 





9 





60 


TC 



COLLECTOR-TO-EMITTER VOLTS (Vcf ) Hcs lit 

Fig. 10- Typical gain bandwidth product 
(f T ) for 2N1711, 2N1893.2N2405. 



1000 








































V& 




<•* 


J 


] ] 




















*&• 


1 








T> ioo 


~2 


• 


^r 


















rr 
























T 






















I: 


t 






















V 


k^ 




















^ 


V. 


»■ L. 










llTgl 


















































































1 






1 1 1 1 


1 1 1 1 





eXLECTOK-TO-IWTTEH VOLT/We.lVdl— V 

Fig. 1 1 - Typical gain bandwidth product (fj) 
for 2N699, 2N1613, 2N2102, 2N2270, 
2N3053, 2N3053A, 40389, 40392. 









COLLECTOR 




nn 






. n 
























EMITTER CURRENT (I E l'0 
FREE-AIR TEMPERATURE (T F A>'23* C 














«: 

t 

i 




1 1 1 1 1 II 
































i 
























"■ . 





- 


























-■-, 


-J 




■* 












i ' U ° 


















s 


















/ 
















f : 




OUTPUT CAPACITANCE FOR V CB 




































































































REVERSE-BIAS VOLTS ( V BE OR V CB I SZCS-IIUS 

Fig. 12- Typical capacitance characteristics 
for all types. 




JUNCTION TEMPERATURE ITj) — 'C 

Fig. 13- Typical collector-cutoff current 

characteristics for 2N699, 2N1893, 
2N2405. 




COLLECTOR-TO-EMITTER VOLTAGE IVCE> — V MCS _,il7»«S 

Fig. 16- Typical low-current output character- 
istics for 2N699, 2N1613. 2N2102, 
2N2270, 41502. 




COUECTOR-TO- EMITTER VOLTS (V CE ) 



Fig. 19 - Typical low-current output 
characteristics for 2N2405. 



gLJ 

8 °'' 








































J\0°" 


COLL 


ECTO 


1 ML 


■IAMJ 


EK« 


JICJ^ 


tS# 


TM> 


^Hr- 








-^» 




















































— k& 


__ 


















5 




















rz 


















i 




















n a 


S6 - 


» 


i 2 


3 i 


? 


4 ij 


10 1! 


5 ISO 17 



FME-AIR TEMPERATURE <T F4 )—"C 

«CS 1*52 



Fig. 14 ■ Typical collector-to-emitter saturation 
characteristics for 2N 1893, 2N2405. 




Fig. 17 - Typical low-current output character- 
istics for 2N 1711. 




COLLECTOR-TO-EMITTER VOLTS (V C E> 



Fig. 20 - Typical high-current output 
characteristics for 2N699, 
2N2270. 




"^6 ^S 6 is "so re ioo ia iso its 

FREE -AIR TEMPERATURE (T FA I— *C 



Fig. 15- Typical base-to-emitter saturation 
characteristics for 2N1893, 2N2405. 




Fig. 18- Typical low-current output 
characteristics for 2N1893. 



AMBIENT TEMPERATURE (T»> .25'C 














ink;;; ;: 




































































».» 
















< "°° 












*:■ 
















i 












.3 
















~ ""-J 










»a 


































2 3 






•Hi: 






"t 


f H: 


1 




.::: 






iii. 


o J 












-1.5 














- l 




=- 
























3 ° r 


BASE 


_Cu'rREBT_ 


;b 


■ 0. 


3 m 


l 












U t! 


:,::: :|:::l- I i I: 













COLLECTOR-TO-EMITTER VOLTAGE (V C E> — V 

Fig. 21 - Typical high-current output 
characteristics for 2N1613, 
2N2102, 41502. 



58 



POWER TRANSISTORS 



2N697, 2N699, 2N1613, 2N1711, 2N1893, 2N2102, 2N2270, 
2N2405, 2N3053, 2N3053A, 40366, 40389, 40392, 41502 




Fig. 22 -Typical high-current output 
characteristics for 2N171 1 . 



COMMON-EMITTER CIRCUIT, BASE INPUT. 
FREE-AIR TEMPERATURE" 25* C 




COLLECTOR-TO-EMITTER VOLTS (V c eI 



Fig. 23 - Typical high-current output 
characteristics for 2N1893. 



COMMON-EMTTER CIRCUIT 
FREE -Aft TEMPERATURE t 


BASE INPUT 
TFAI'25- C 




- 






.... 






SCO 

= 400 




I 


•&» 
















<"' 


h. 
























j.: 


























U£-.. 






































i 

i 'oo 
















































_2 


































'■'-■'-''- ; : : 






:::: 


:::: 














;;;;; 


pL 


•n? 


::!: 






•111 




_L 


lii; 














M. 


iiii»S^iM!iiiiM^Rgstti,i;P 




:ii: 


lili 


iiii ; 



COLLECTOR-TO-EMITTER VOLTS (VCE> 92CS-IUT. 

Fig. 24 - Typical high-current output 
characteristics for 2N2405. 




COLLECTOR-TO-EMITTER VOLTAGE IV CE I- 



Fig. 25 - Typical high-current output charac- 
teristics for 2N3053, 2N3053A, 
40389. 40392. 



59 



POWER TRANSISTORS 



2N1479-2N1482, 2N1700, 40347-40349, 40367 

Hometaxial-Base Silicon N-P-N Power Transistors 



General-Purpose Types for Low-Power Applications 



These RCA types are hometaxial-base, 
silicon n-p-n power transistors intended 
for a wide variety of applications in in- 
dustrial and military equipment. They are 
particularly useful in power-switching cir- 
cuits such as in dc-to-dlc converters, in- 
verters, choppers, solenoid and relay 
controls; in oscillator, regulator, and 
pulse-amplifier circuits; and as class A 



and class B push-pull audio and servo 

amplifiers. 

The 2N1700 and 40367 are supplied in 

the hermetic JEDEC TO-39 package or 

TO-39 with factory -attached mounting 

flange or heat radiator. 



Features: 

■ High-temperature characterization 

■ High dc beta at 200 mA 

■ Full switching-time characterization at 
200 mA 

Additional features for 40367: 

■ High realiability assured by five 
preconditioning steps 

■ Group A test data in data bulletin 



Maximum Ratings, Absolute-Maximum Values: 

•COLLECTOR-TO-BASE VOLTAGE VcbO 

* COLLECTOR-TO-EMITTER VOLTAGE: 

With base open, sustaining Vceo' sus * 

With emitter-to-base reverse! biased 

< V EB = 1-5 volts) V CEV 

* EMITTER-TO-BASE VOLTAGE V EB0 

* COLLECTOR CURRENT Ic 

PEAK COLLECTOR CURRENT ICM 

* EMITTER CURRENT I £ 

* BASE CURRENT IB 

* TRANSISTOR DISSIPATION: Pj 

At case temperature of 25°G 

At ambient temperature up to 25°C 

* TEMPERATURE RANGE: 

Operating and Storage Tq, T stg 

* LEAD TEMPERATURE (During soldering): 

At distances^ 1/32 in (0.8 mm) from seating plane 

for 10 s max T(_ 

*2N-Series types in accordance with JEDEC registration data 



40347 40348 40349 

2N1479 2N1480 40347V1 40348 V 1 40349V1 

2N1481 2N1482 2N1700 40347V2 40348V2 40349V2 40367 

60 100 60 60 90 160 100 V 



40 



55 



40 



40 



60 


100 


60 


60 


12 


12 


6 


7 


1.5 


1.5 


1 


1.5 




- 


- 


3.0 


.75 


-1.75 


- 


- 


1 


1 


0.75 


0.5 



11.7 

(40347V2) 

8.75 

(40347) 

1.0 
(40347) 
4.4 
(40347V 1) 

- -65 to 200 



65 

90 

7 

1.5 

3.0 



11.7 

(40348V2) 

8.75 

(40348) 

1.0 
(40348) 
4.4 
(40348V 1) 



140 

160 

7 

1.5 

3.0 



11.7 

(40349V2) 

8.75 

(40349) 

1.0 
(40349) 
4.4 
(40349V 1) 



TERMINAL DESIGNATIONS 




Fig. 1 



Typical input characteristics for 
2N1479-2N1482. 




55 V 

100 V 
12 V 
1.5 A 

- A 

- A 
1 A 



Fig. 2— Typical output characteristics for 
2N1479-2N1482. 



JEDEC TO-39 

2N1 479-2N1 482.2N1 700. 

40347-40349.40367 



JEDEC TO-39 with Mounting 
40347V2, 40348V2.40349V2 



JEDEC TO-39 with Hut 

Radiator 

40347V1 ,40348 V 1 ,40349 V 1 



60 



POWER TRANSISTORS 



2N1479-2N1482, 2N1700, 40347-40349, 40367 



ELECTRICAL CHARACTERISTICS, A t Case Temperature (Tr) = 


25°C unless otherwise specified 
























TEST CONDITIONS 


LIM 


TS 




VOLTAGE 


CURRENT 














CHARACTERISTIC 


SYMBOL 


Vdc 


mAdc 


2N1479 


2N1480 


2N1481 


2N1482 


2N1700 


40367 


UNITS 


VCB 


VCE 


veb 


"C 


■b 


<E 


MIN. 


MAX. 


MIN 


MAX. 


MIN 


MAX. 


MIN. 


MAX. 


MIN 


MAX. 


MIN 


MAX. 


Collector Cutoff Current: 


'CBO 


30 















10 




10 




10 














("A 


T C = 150°C 


30 













'.- 


500 - 


_ 


500 


_ 


500 


_ 


500 




1000 






" Emitter Cutoff Current 


•ebo 






12 
6 










- 


10 


- 


10 


- 


10 


- 


10 


- 


25 


- 


2 


AlA 


Collector-To-Emitter 










































Voltage: 










































With base-emitter junction 










































reverse -biased 


V CEV 






1.5 


0.25 






60 


- 


100 


- 


60 


_ 


100 


_ 


_ 


_ 


100 


_ 


V 










1.5 


0.5 






- 


- 


- 


- 


- 


- 


_ 


_ 


60 


_ 


_ 


_ 




With base open, sustaining 


v CEOls"S> 








50 







40 


- 


55 


_ 


40 


_ 


55 


_ 


_ 


_ 


55 




Base-To-Emitter Voltage 


V B E 




4 




200 






- 


3 


- 


3 


_ 


3 


_ 


3 


_ 


_ 




3 


V 








4 




100 






- 


- 


_ 


- 


_ 


- 


_ 


_ 


_ 


2 


_ 


_ 




Collector-Emitter 










































Saturation Voltage 


V CE (sat) 








200 


10 


























1.4 


V 


DC Current Transfer Ratio 


"FE 




4 
4 




200 
100 






20 


60 


20 


60 


35 


100 


35 


100 


20 


80 


35 


100 




Small-Signal Current 
































Transfer Ratio 


"fe 




4 




5 






50 Typ." 


50 typ." 


50 Typ." 


50 Typ.* 


40 Typ. 


_ 


_ 




DC Collector-To-Emitter 










































Saturation Resistance 


rcE' 53 '' 








200 


20 




- 


7 


- 


7 


_ 


_ 


_ 


_ 


_ 


_ 


_ 


_ 


n 












200 


10 


- 


- 


- 


- 


- 


_ 


7 


_ 


7 


_ 


_ 


_ 


_ 














100 


10 






















10 


_ 


_ 




Collector-To-Base Capacitance 


c ob 


40 












150 Typ." 


150 Typ.* 


150 Typ.* 


150 Typ." 


150 Typ. 


_ 


_ 


pF 


Thermal Time Constant 


Tl 














10 Typ.* 


10 Typ.* 


10 Typ." 


10 Typ." 


10 Typ. 


_ 


_ 


ms 


Alpha-Cutoff Frequency 


„ f ab 


28 






5 






1.5 Typ.* 


1.5 Typ.* 


1.5 Typ.* 


1.5 Typ." 


1 .5 Typ. 


_ 


_ 


MHz 


Switching Time: 
































Delay Time 


«d» 














0.2 Typ.* 


0.2 Typ.* 


0.2 Typ.* 


0.2 Typ." 


0.2 Typ. 








Rise Time 


«r* 














1 Typ.* 


1 Typ.* 


1 Typ.* 


1 Typ." 


1 Typ. 


_ 


_ 


Storage Time 


«s* 














0.6 Typ.* 


0.6 Typ.* 


0.6 Typ." 


0.6 Typ." 


0.6 Typ. 


_ 


_ 


Fall Time 


tf» 














1 Typ.* 


1 Typ.* 


1 Typ.* 


1 Typ." 


1Typ. 


_ 


_ 


Thermal Resistance: 








































Junction-to-case 


R0jc 
















35 




35 




35 




35 




35 


_ 


35 




Junction-to-free air 


R0JFA | 














200 




200 




200 




200 


200 


- 


- 





*2N-Series types in accordance with JEDEC registration data. 
• IC = 200 mA, l Bl = 20 mA, \q 2 = -85. mA 



1 


COL 


uEC 


OR 


T0- 


MlTTER VOL 


TAG 


lv r 


E»- 4 v_J::: 


:: -i 


!i«i 


:::: 








1 ! 










:':' 


:::: 


•hI; 


80 












■ \ 






:;;; 




■':■■'■ 




i!^ 


i 










j 






;:;: 




":;•:: 




: 


-■ 








i 














::::! 




k— ! 








1 














::::: 


60 
20 










cas 


E -tMPE. 


da' 


JHE 


i c i 


?5 


•• 




, 




r 
i 






^ 




























-65 


•C : 








\ 














/ 


















200-C 




















^ 










& 






- 








■4 




° 































Fig. 3— Typical dc beta characteristics for 
2N1479-2N1482. 




0.2 04 0.6 08 I 



COLLECTOR CURRENT (It)— A 

Fig.4— Typical dc beta characteristics 
for 2N 1700. 



92CS-M57JRI 





















1 








2r 100 
Z n 
i§ so 

§ 10 

£ " 

Q 












,^ 


r. - 




















^ 


. 


l 










0* 


y 






t 




<■' 


-t»CE = 'V 






— 














V 














cj-j^ 


>k 


















! 
i 


< 


n 


. 






i n 




* 












1 1 



COLLECTOR CURRENT (l c >— •* .,ui» 

Fig. 5— Typical dc beta characteristics 
for 40347. 



61 



POWER TRANSISTORS 



2N1479-2N1482, 2N1700, 40347-40349, 40367 

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 25°C unless otherwise specified 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


40347 


40348 


40349 


VCE 


VBE 


ic 


■b 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


Collector-Cutoff Current 
With external base-to- 
emitter resistance 
(R BE ) = 1 k£l 


'CER 


30 
60 
90 








- 


1 


- 


1 


- 


2 


|UA 


With R BE = 1 k£2 
and Tq = 150°C 


'CER 


30 
60 
90 








- 


1 


- 


1 


- 


1 


mA 


Emitter-Cutoff Current 


'ebo 




-7 






- 


10 


- 


10 


- 


10 


MA 


DC Forward-Current 
Transfer Ratio 


hFE 


4 
4 
4 
4 




0.15 
0.30 
0.45 
1.00 




25 


100 


30 
10 


125 


30 
10 


125 




Co I lector-to- Emitter 
Sustaining Voltage: 
With base-emitter junction 
reverse biased 


v CEV <sus) 




-1.5 


0.050 




60 


- 


90 


- 


1609 


- 


V 


With base open 


V CE0 (sus) 






0.050 




40 


- 


65 


- 


140 a 


- 


V 


Base-to-Emitter Voltage 


V B E 


4 
4 
4 




0.15 
0.30 
0.45 




- 


1.5 


- 


1.3 


- 


1.1 


V 


Collect or-to-Emitter 
Saturation Voltage 


V CE (sat) 






0.15 
0.30 
0.45 


15 mA 
30 mA 
45 mA 


- 


1 


- 


0.75 


- 


0.15 


V 


Forward-Bias Second Break- 
down Collector Current 
(1-s non-repetitive pulse) 


>S/b 


38 

63 

138 








345 


- 


208 


- 


95 


- 


mA 


Thermal Resistance : 
Junction-to-Case 


R0JC 










20(max.) 
40347 
15(max.) 
40347V2 


20(max.) 
40348 
15(max.) 
4 0348V 2 


20(max.) 
40349 
15(max) 
40349V2 


°C/W 


Thermal Resistance: 
Junction-to-Ambient 


R0JA 










40(max.) 
40347V 1 


40(max.) 
40348V 1 


40(max) 
40349V 1 


°C/W 



1 Pulsed; pulse duration = 300 /is, duty factor ^2%. 




COLLECTOR CURREhTdc 



Fig.6— Typical dc beta characteristics for 
40348. 



COLLECTOR TO EMITTER VOLTAGE (V c£ ) ' <V 














1 


?<0 

s m 

£ 160 
£ 120 
3 10 














J 






































































rf 










■ 


\ 
\ 




V 












- O 

/ 
/ 






























•#"_. 














































j 


















l v 







COLLECTOR CURRENT (l c ) — mA mw»o 

Fig. 7— Typical dc beta characteristics for 
40349. 



































CASE TEMPERATURE (T c ) ' 2S°C 
















2.0 

§ 1.2 
£ O.i 
J 0.1 




















































fs 
























&. 

^ 


































TS& 1 ""Sv, 


















r [ !\ 
















j 








i : 























1 


2 








1 



COLLECTOR CURRENT (l c )-mA wci.i.-.r, 

Fig.8— Typical gain-bandwidth product vs. 
collector current for 40347, 
40348 and 40349. 



62. 



POWER TRANSISTORS 



2N1479-2N1482, 2N1700, 40347-40349, 40367 



l0 . 

6 

4 

2 

IS 

? I.O 

J. 8 

"o 

H 6 

f- 

(E 

5 

u 

S 2 

\- 
u 
u 

-1 
-J 

8 o.i 

e 

6 

4 

2 

0.01 






































(CURVES MOST BE DERATED LINEARLY: 




^PF 


3 + 1 


pis 


QnH 


~ 




™ 


i|2|;i 


:l3 






it±:s ;ii ..... 












t! !ii 


!m f 


1 =M J 


;:• •.':'.: 




:::: 




















iiait 


in: 


i* 


! "j 




Hr 7 


lllhS 


ORMALIZED 
POWER 
ULT1PLIER 




" + : 














:r.:iT 






PI T:' .- 


f ;i: i 


jj#* 




:... .'; : : • 














:*'. '•' J 


• * :•" : -i 


i;:i 




H i. 


t: -:; : 


: 


: 100 /rt 

3(210 W) 


4i:|4.:l;:i 








_I C (MAX 


) 






::'-. : ; 


: : -. : . PULSE OPERATION* r 


pi- 

— 15.0 Zi 


i 




















-'---- 




' ^ 
















; SFf 


% 


" 


^ ^ 


® 




m 














— t: 


V 


TTrl 


— 




3fc 


rc*3R 


TT-f-f- 
:• 10.0 


























B=l 4 




























!:\ 


w 


jj-'vjfc 


*V 


TTlil ..■: 

-H-f 6.0 
























: |. ..-: " 


^Sfe^ 


•Si-: 


























";?' 


%?a^! 




























ih 




I:^ 


v> 






' *,: '. - 
























"" 






-** 






■ :^S 


• : 2.3'" 
















: ; 






. i.. . 






".:: 


-t^ 


V/.1- 


i'^t 


HI 






















• 










■'■(: 




_|_u 








""•FOR SINGLE NON-REPETITIVE PULSE 


r: — 


^"h 


r--?S 


.... io 








a 








-.1 l-.1iWiHi:S!li:!=l;!i: ! ::! : 




| 






















VCE0(MAX.)-40V (4034 

;M-|^;l!l!l;l:iyi!H^ 


7)« 


■: " 




























I : 


■ : ; :; 


::.. : 








































-I l:Mll:l;hi!!l!!;:|!!iil 


.! 1 : 




1 




;"■ | 
















VcEO (MAX 




91 — 




-r 




i 








lilll 


:h: 


- 




TT- 




::• ■; : 


iiiiii 


;::: 








t ; 


:..::. 


■:. \ 









10 



6 e 



COLLECTOR-TO-EMITTER V0LTA6E (V CE ) — V 

92SS-3586RI 

Fig.9-Maximum operating areas for 40347, 40348, and 40349. 




10 20 30 40 SO 80 

COLLECTOR-TO-EMITTER VOLTAGE (VcE>-V 

92CM-II555R2 

Fig. 10-Typical output characteristics for 2N1700. 



case temperature (t c > ■ 2s»c 










400 

f- 
I- 




BASE CURRENT (l B ) • UaA 








y 






9 




r 






7 








]r 










J 






S 






' 


\ 










1 


f 






3 






r 
















1 









/ 











1.0 2.0 3.0 4.0 SO (.0 

COLLECTOR-TOEMITTCR VOLTAGE (V CE )— V mum 

Fig. 11—1 ypical output characteristics for 
40347. 



CASE TEMPERATURE <T(;) • 2S»C 










1 
JT 100 

tiro 

g 100 




















BASE CURRENT del ■ 1 >A 


























s 














< 










3 














2 










1 

















2.0 3.0 4.0 5.0 

COLLECT0RT0EMITTER VOLTAGE (Vcj)— V mum 

F/jj. 1 2— Typical output characteristics for 
40348. 



CASE TEMPERATURE (T C | . 2S°C 


-4 






200 

in 
7 ico 
ii40 

£ 120 

s 

S loo 
fm 

1" 

40 

20 


























3.0 j 










l" 1 




r' 






" 




r 




IS i 




f 






1 

in 




>-~ 






v ..-t 




— 






o.s 




f 










\ 















COUECTOR-TO-EWTTER VOLTAGE (Vce>— V „>»„. 

Fig. 13— Typical output characteristics for 
40349. 



COLLECTORTO-EWTTER VOLTAGE (V cc ) • 4V 








1" 

j 300 

i 

| 200 

i no 












f S 












// 
// 












& 
$,'*. 












4V 


/ ~i 










X , 











0.2 0.4 0.( 0.1 1.0 1.2 1.4 

BASE-TOEWTTER VOLTAGE (V Bt l— V mum 

Fig. 14— Typical transfer characteristics for 
40347. 



COLLECTOR TO EMITTER VOLTAGE (Vc£l • 4V 








WO 

r 

if 
Z 300 

s m 

§ in 




T 
















*/*l 










<$*/ 




I 






| 




7 






I 



BASE TO EMITTER VOLTAGE (VgEl— V mum 

Fig. 15— Typical transfer characteristics for 
40348. 



COLLECTOR TO EMITTER VOLTAGE (Vc£l - 4V 














m 

in 
\u 

I- 

S 120 

E in 
§ " 

a w 

20 










































*/ 


*/' 












7 










1/ 


/ 












/ 










' $7 


/ 










*, 




/ 














' 























BASE TO EMITTER VOLTAGE (VgEl— V mum 

Fig. 16— Typical transfer characteristics for 
40349. 



63 



POWER TRANSISTORS 



2N1479-2N1482, 2N1700, 40347-40349, 40367 



I0""e 

i IC 5 ,- 

8 \ 

S l0 " 6 S 


COLLECTOR-TO-EMITTER VOLTAOE (Vce)'JOV — 
BASE-TO-EMITTER RESISTANCE IRBE>"000 — 






























































































& S 










































S S 










































io-'» J 











































CASE TEMPERATURE (T c l — -C 

Fig. 1 7— Collector-cutoff-current characteristic 
for 40347. 



5 2 


COLLECTOR 


-TO-EMITTE 


1 VOLTAGE (Vr.E>»60V — 




BASE-TO-EMITTER RESISTANCE IRBE 






















































































































i l0 " 7 8 




























































































,! 





















































CASE TEMPERATURE (T c ) — °c 



Fig. 1 8— Collector-cutoff-current characteristic 
for 40348. 



I0* 5 6 

i io-S- 

" I0' 6 b 


COLLECTOR 


TO-EMITTE 


* VOLTAGE IVCEl ,| O0V _ 


l 


























U ^ 








I 


s 








_^ 






= ^^ 


































































CASE TEMPERATURE (T c l — °C 

Fig. 1 9— Collector-cutoff-current characteristic 
for 40349. 



1 2 

1 100 

-a \ 

£ ic 
t 

0.1 


COLLE 


CTOR-T 


J-BASE 


VOLTA(iEIV CBO 

I 


*50V 























































92C5 -10881' 



COLLECTOR CURRENT (l c l'BASE CURRENT (lg) ■ 10 
CASE TEMPERATURE (T c > - 25»C 






1 000 
800 

= 600 

"i <0O 

o 100 














- - 






ty 



















































Fig. 20— Typical leakage characteristics for 
2N1479-2N1482. 



COLLECTOR-TO-EMITTER SATURATION VOLTAGE, V CE (SATI— V„ C! „ JOO 

Fig.21 — Typical saturation characteristics for 
40347, 40348 and 40349. 



| 60 






































































































1 
"mSO 














1 




£40 

o 
o 30 

3 20 














$ 


?l ynTtT 






10 



























BASE-TO-EMITTER VOLTAGE (V BE )-V 

92CS-M569RI 

Fig. 22— Typical input characteristics for 
2N1700. 



K7» 


















COLLECTOfpTO-BASE VOLTS (V C B>'» 














































is 

h 

lie 

|i 
































































y 
















/ 












































J*^ 




























y^ 























































































JUNCTION TEMPERATURE— C 



Fig. 23 — Typical leakage characteristics 
for 2N 1700. 



< 08 
I 

X 

jr 07 

8 os 

0.5 


















f:'.~ 


INDUCTANCE (L)-75mH 




















1^~ 
















l ( l i I 


i"T 




-V 1 








































































■:t2 
















:^4i 






















||f 





































































BASE-TO-EMITTER VOLTAGE IV BE ) — V 

Fig.24— Reverse-bias second-breakdown 
characteristics for 40347, 40348 
and 40349. 



64 



POWER TRANSISTORS 



2N1483-2N1486, 2N1701, 40368 

Hometaxial-Base Silicon N-P-N Power Transistors 



General-Purpose Types for Medium-Power Applications 



These RCA types are hometaxial-base 
power transistors of the silicon n-p-n 
type intended for a wide variety of appli- 
cations in industrial and military equip- 
ment. They are particularly useful in 
power-switching circuits such as in dc- 
to-dc converters, inverters, choppers, 
solenoid and relay control; in oscillator, 
Maximum Ratings, Absolute-Maximum Values: 



regulator, and pulse amplifier circuits; 
and as class-A and class-B push-pull audio 
and servo amplifiers. 

These transistors feature high beta at 
high current, and excellent high-temper- 
ature performance. They are supplied in 
the JEDEC TO-8 hermetic package. 
2N1483 2N1484 
2N1485 2N1486 2N1701 



* COLLECTOR-TO-BASE VOLTAGE VcBO 

* COLLECTORTO-EMITTER VOLTAGE: , 

With bate open (sustaining voltage) Vceo' sus ' 

With emitter-to-base reverse 

biased (Ve b ) - 1.5 volts) V CEV 

* EMITTER-TO-8ASE VOLTAGE V EB0 

* COLLECTOR CURRENT I c 

* EMITTER CURRENT I E 

* BASE CURRENT I B 

* TRANSISTOR DISSIPATION: ?T 

At case temperature of 25°C 

At case temperature of 100°C 

* TEMPERATURE RANGE: 

Operating and Storage T j , T^g 

PIN TEMPERATURE (Duningsoldering): 
At distance >1/32 in. (0.79 mini 
from seating plane for 10 s max T|_ 

•2N-Series types in accordance with JEOEC registration data 



40368 

100 



60 


100 


12 


12 


3 


3 


-3.5 


-3.5 


1,5 


1.5 


25 


25 


14.1 


14.1 




-65 to +200 




*W I 


COLLECTOR-TO-EMITTER VOLTAGE (Vc£)'4v[ 
















































5 


Ml 














* 


a 


lit 












**■ Ft§ 












4 






CASE TEMPERATURE IT C !■ I75'C fiMMi 










V 40 

i 

g 20 






|[||||||||||l]H^^^^Mffig-6S'cm 





COLLECTOR AMPERES 



92CS-I0444R2 

Fig. 1 — Typical dc beta characteristics for 
2N1483-2N1486, and 40368. 



COLLECTOR CURRENT (Itl-A MC5 . M574m 

Fig. 2 — Typical dc beta characteristics for 
2N17Q1. 







COMMON-EMITTER CIRCUIT, BASE INPUT. 
COLLECTOR-TO-EMITTER VOLTS = 4 




.... 


....!..,!... 


CURVE 


CASE TEMPERATuR 


E -*C 







-1 -feS 














i : 










± 










.... 










i 


7 


z 






* 60 
1 40 


....;.... 


















....:.... 










s- 










.._, 










1 1:: 


















.... 


.... 










V- 































■ 


s 






2 


5 







BASE-TO-EMITTER VOLTS (V^O 



92CS-I0443R3 




Features: 

■ High-temperature characterization 

■ High dc beta at 750mA 

■ Full switching-time characterization 
at 750 mA 

Additional Features for 40368: 

■ High reliability assured by five pre- 
conditioning steps 

■ Group A test data in data bulletin. 



TERMINAL DESIGNATIONS 





BASE-TO-EMITTER VOLTAGE (V B ^-V ^ ct ., 



Fig. 3 — Typical input characteristics for 
2N1701. 



T » 

E 2 

« IS 
0.5 


C* 


SE TEMPERATURE (T c )'2S*C B8 










*W^2C<)u|,||IMMl|n||mtMrp 














iHlllillllllii 1 ^ 

ir ' 1 1 1 ff ' z0 

Bmw ioc 








6C 


4C 






tBASECURRe 


NT 


II B 












SfijIS'ljjffi 


















Sifcil 


llflliJiS 



Fig. 4 — Typical input characteristics for 
2N1483-2N 1486. and 40368. 



Fig. 5 — Typical output characteristics for 
2N1483-2N1486, and 40368. 



10 20 30 40 50 60 9 j CM .„. 

COLLECTOR-TO-EMITTER VOLTAGE (V C E>-V 

Fig. 6 — Typical output characteristics for 
2N1701. 



65 



POWER TRANSISTORS 



2N1483-2N1486, 2N1701, 40368 

ELECTRICAL CHARACTERISTICS, at Case Temperature (T c ) - 25°C unless otherwise specified 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
mA dc 


2N1483 


2N1484 


2N1485 


2N1486 


2N1701 


40368 


VCB 


V C E 


«C 


<B 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN 


MAX. 


MIN. 


MAX. 


'CBO 


60 
30 








- 


15 


- 


15 


- 


15 


- 


15 


- 


750 
100 


- 


9 


HA 


At T c = 1 50°C 


30 








- 


750 


- 


750 


- 


750 


- 


750 


- 


1500 


- 


- 


'ebo 

V EB =12V 
= 6 












- 


15 


- 


15 


- 


15 


- 


15 


- 


50 


- 


5 


MA 


hFE 




4 

4 

20 


750 a 

300 a 

2500 a 




20 


60 


20 


60 


35 


100 


35 


100 


20 

5 


80 


35 


100 




V CE0 (sus) 






100 a 





40 


- 


55 


- 


40 


- 


55 


- 


40 b 


- 


55 


- 


V 


V CEV 

V BE = -1.5V 






0.25 




60 


- 


100 


- 


60 


- 


100 


- 


- 


- 


100 


- 


V CEX 

V BE = -1.5V 






0.75 




- 


- 


- 


- 


- 


- 


- 


- 


60 b 


- 


- 


- 


V 


V B E 




4 

4 

20 


750 a 

300 8 

2500 a 




- 


3.5 


- 


3.5 


- 


2.5 


- 


2.5 


- 


3 

13 


- 


2.5 


V 


V CE (sat) 






750 
2500 a 


40 
1000 




















12.5 




0.75 


V 


rcE( sat > 






750 
300 


75 
30 


- 


2.67 


- 


2.67 


- 


1 


- 


1 


- 


5 


- 


- 


n 


c ob 


40 








175 (typ.) 


175 (typ.) 


175 (typ.) 


175 (typ.) 


175 (typ.) 


- 


- 


pF 


r 1 










10(typ.) 


10 (typ.) 


(10 (typ.) 


10 (typ.) 


10 (typ.) 


- 


- 


ms 


f ab 


28 




5 




1.25 (typ.) 


1.25 (typ.) 


1.25 (typ.) 


1.25 (typ.) 


- 


- 


- 


MHz 


f hfb 


6 






5 


-I - 


- I - 


- I - 


-I - 


350 | - 


- 


- 


kHz 


28 




0.5 


100 


■ - 


- 






1 (typ.) 


- 


MHz 


td # 










0.2 (typ.) 


0.2 (typ.) 


0.2 (typ.) 


0.2 (typ.) 


0.2 (typ.) 


- 


- 


US 


tr # 










1 (typ.) 


1 (typ.) 


1 (typ.) 


1 (typ.) 


1 (typ.) 


- 


- 


ts - 










0.8(typ.) 


0.8 (typ.) 


0.8 (typ.) 


0.8 (typ.) 


0.8 (typ.) 


- 


- 


tf* 










1.1 (typ.) 


1.1 (typ.) 


1.1 (typ.) 


1.1 (typ.) 


1.1 (typ.) 


- 


- 


R 0JC 










- 


7 


- 


7 


- 


7 


- 


7 


- 


7 


- 


- 


°C/W 


R 0JA 










- 


100 


- 


100 


- 


100 


- 


100 


- 


100 


- 


- 



a Pulsed, pulse duration = 300ms, duty factor = 1 .8%. • l c = 750 mA, I B = 20 mA, lg = -8.5 mA. * 2N-Series types in accordance with JEDEC registration data. 



<n ioo 


EMITT 
COLLE 


ER OPE 
CTOR-T 


N. 
O-BASE 


VOLTS 


30 




























31 io 

Og 4 

§3 j 


























- - 

























K ', 




















^^ 
















- 






















Q,< 





















(0*. 






(V CB I- 






















< 4 
1 




















































































1 2 

? to- 








1 






























TO^ 










































4 , 



















































92CS-I08»J 

Fig. 7 — Typical collector-cutoff current for 
2N 1 483-2N 1 486 and 40368. 



JUNCTION TEMPERATURE (Tj) — "C 9JCS-I9JI 

Fig. 8— Typical collector-cutoff current 
characteristics for 2N1701. 



66 



POWER TRANSISTORS 



2N1487-2N1490, 2N1702, 40369 

Hometaxial-Base Silicon N-P-N Power Transistors 



General-Purpose Types for High-Power Applications 



Features: 



These RCA types are hometaxial-base 
power transistors of the silicon n-p-n 
type intended for a wide variety of ap- 
plications in industrial and military equip- 
ment. They are particularly useful in 
power-switching circuits such as in dc-to- 
dc converters, inverters, choppers, sole- 
noid and relay controls; in oscillator, 

Maximum Ratings, Absolute-Maximum Values: 



regulator, and pulse-amplifier circuits; 
and as class-A and class-B push-pull 
audio and servo amplifiers. 
These transistors feature high power- 
dissipation ratings, high beta at high 
current, and excellent high - temper- 
ature performance. They are supplied in 
the JEDEC TO-3 hermetic package. 



* COLLECTOR-TO-BASE VOLTAGE V CBO 

* COLLECTOR-TO-EMITTER VOLTAGE: 

With base open (sustaining voltage) V££q(sus) 

With emitter-to-base reverse 

biased (Vg B ) » 1.5 volts) V CEV 

* EMITTER-TO-BASE VOLTAGE V EB0 

* COLLECTOR CURRENT I c 

* EMITTER CURRENT I E 

* BASE CURRENT I B 

•TRANSISTOR DISSIPATION: P T 

At mounting-flange temperature of 25°C 

At mounting-flange temperature of 100°C 

* TEMPERATURE RANGE: 

Operating and Storage Tq, T stg 

PIN TEMPERATURE (During soldering): 
At distance > 1/32 in. (0.79 mm) 
from seating plane for 10 s max Ti_ 

*2N-Series types in accordance with JEDEC registration data 



2N1487 


2N1488 


2N1489 


2N1490 




40369 


60 


100 



2N1702 



i4o 


'ii 








COMMON-EMITTER CIRCUIT, BASE INF 




^ 


\ 












MOUNT ING-rLANGE 


f 




\ ] 










25 

-65 
200 







k 






1 




M 




















:::: 




i 
























* ,n 


•• 
























:i 




< 


/!: 


Vs 






















■; 


ij 


£ 


;; 
























' 






ii 
























:: 


















*H 








:;;• 


ijii 


ill 






:! 


















^ 








rr 






















;:;; 


:'!: 


m 





COLLECTOR AMPERES 



Fig. 1 — Typical dc beta characteristics for 
2N 1487 -2N 1490, and 40369. 




COLLECTOR CURRENT (!£>— A 



Fig. 2 — Typical dc beta characteristics for 
2N1702. 



■ High-temperature characterization 

■ High dc beta at 1.5A 

■ Full switching-time characterization 
at 1 .5A 

Additional Features for 40369: 

■ High reliability assured by five pre- 
conditioned steps 

■ Group A test data included. 



TERMINAL DESIGNATIONS 




JEDEC TO-3 



COMMON-EMITTER CIRCUIT, BASE INPUT. 
I MOUNTING-FLANGE TEMPERATURE -25'C 
V«M" VOLTAGE AT WHICH ALPHA (a) AT 
LOW VOLTAGE X THE MULTIPLICATION 
FACTOR (M)= I 




COLLECTOR-TO-EMITTER VOLTS 



Fig. 3 — Typical output characteristics for 
2N1487-2N1490, and 40369. 




BASC-TO-EMITTER VOLTS (V BE ) 92CS-I045«2 



Fig. 4 — Typical input characteristics for 
2N1487-2N1490, and 40369. 




BASE-TO-EMITTER VOLTAGE (Vg^-V 9ZCS-II567RI 

Fig. 5 — Typical input characteristics for 
2N1702. 



CASE TEMPERATURE IT C )■ 25*C 




COLLECTOR-TO-EMITTER VOLTAGE (Vce'-V 92CM-II564R2 



Fig. 6 — Typical output characteristics for 
2N1702. 



67 



/ 



POWER TRANSISTORS . 



2N1487-2N1490, 2N1702, 40369 



ELECTRICAL CHARACTERISTICS Mounting-flange temperature = 2S°C unless otherwise specified 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


DC 
COLLEC- 
TOR 
VOLTAGE 
(VOLTS) 


DC 
EMITTER 
VOLTAGE 

(VOLTS) 


DC 

COLLEC- 
TOR 

CURRENT 
(mA) 


DC 

BASE 

CURRENT 

(mA) 


TYPE 
2N1487 


TYPE 
2N1488 


TYPE 
2N1489 


TYPE 
2N1490 


TYPE 
2N1702 


TYPE 
40369 


V C B 


V C E 


V E B 


'C 


>B 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


'CBO 


30 










- 


25 


- 


25 


- 


25 


- 


25 


- 


200 


- 


10 


PA 


60 










- 


- 


- 


- 


- 


- 


- 


- 


- 


1000 


- 


- 




AtT c = 150°C 


30 










- 


1000 


- 


1000 


- 


1000 


- 


1000 


- 


2000 


- 


- 


pA 


'ebo 






6 







- 


- 


- 


- 


- 


- 


- 


- 


- 


100 


- 


- 


HA 


'ebo 






10 







- 


25 


- 


25 


- 


25 


- 


25 


- 


- 


- 


6 


AiA 


V CEX 






1.5 
1.5 

1.5 


0.25 

0.5 

1 




60 


- 


100 


- 


60 


- 


100 


- 


60 b 


- 


100 


- 


V 


v CEO (sus) 








100 





40 


- 


55 


- 


40 


- 


55 


- 


40 b 


- 


55 


- 


V 


hFE 




4 

4 

20 




1500 

800 

5000 




15 


45 


15 


45 


25 


75 


25 


75 


15 
3.5 


60 


25 


75 




>'CE' sa, > 








1500 
1500 
800 


300 
100 
80 


- 


2 


- 


2 


- 


0.67 


- 


0.67 


: 


4 


; 


- 


Q. 


V B E 




4 

4 

20 




1500 
250 
300 




- 


3.5 


~ 


3.5 


— 


2.5 


— 


2.5 


- 


4 
20.5 


— 


2.5 


V 


V CE (sat) 








5000 


2000 


- 


- 


- 


- 


- 


- 


- 


- 


- 


20 


- 


- 


V 


c ob 


40 










200(typ.) 


200(typ.) 


200(typ.) 


200(typ.) 


200 (typ.) 


- 


- 


pF 


T \ 












12 (typ.) 


12 (typ.) 


12 (typ.) 


12 (typ.) 


12 (typ.) 


- 


- 


ms 


f ab 


12 






100 




1 (typ.) 


1 (typ.) 


1 (typ.) 


1 (typ.) 


- 


- 


- 


- 


MHz 


f hfb 


6 








100 


- 


- 


- 


- 


- 


- 


- 


- 


300 


- 


- 


- 


kHz 


28 






0.5 




















1 (typ.) 


_ 


- 


MHz 


td # 












0.2 (typ.) 


0.2 (typ.) 


0.2 (typ.) 


0.2 (typ.) 


0.2 (typ.) 


- 


- 


Ms 


V* 












1 (typ.) 


1 (typ.) 


1 (typ.) 


1 (typ.) 


1 (typ.) 


- 


- 


«s* 












1 (typ.) 


1 (typ.) 


1 (typ.) 


1 (typ.) 


1 (typ.) 


- 


- 


tf* 












1.2 (typ.) 


1.2 (typ.) 


1.2 (typ.) 


1.2 (typ.) 


1.2 (typ.) 


- 


- 


R 0JC 












- | 2.33 


- | 2.33 


- | 2.33 


- | 2.33 


- | 2.33 


- 


- 


"C/W 



* 2N-Series types in accordance with JEDEC registration data. 



1 l r = 1.5 A,I R , = 300 mA, l„ = -150 mA 



o <°i 


CMITTER OPEN. 




























































































3* 




















































































ay 

V > 

*' , 

1- 1 




































































6* ' 



















































175 200 

92C3-IOM3 



Fig. 7 — Typical collector-cutoff current 

characteristic for 2N1487-2N1490, 
and 40369. 



I0 3 8 

x 

^ I0 2 - 


COILECTOR-T0 


-BASE VOLTAGE (V C B)-30V _ 


— r / 


| 


































































8 6 8 






















»i°2^ 














% 

























































































Fig. 8- Typical collector-cutoff current 
characteristics for 2N1702. 



68 



POWER TRANSISTORS 



2N3054, 2N6260, 2N6261, 40250, 40372, 40910, 40911 

Hometaxial-Base, Medium-Power Silicon N-P-N 



Transistors 

Rugged Devices for Intermediate-Power Applications in 

Industrial and Commercial Equipment 

Types 40250V1, 40372, 40910, and 
40911 are the 40250, 2N3054, 2N6260, 
and 2N6061 with factory -attached heat 
radiators intended for printed-circuit- 



These RCA types are hometaxial-base 
silicon n-p-n transistors intended for a 
wide variety of medium- to high-power 
applications. Types 2N3054, 2N6260, 
2N6261, and 40250 are supplied in 
the JEDEC TO-66 hermetic package. 



board applications. 



Maximum Ratings, Absolute-Maximum Values: 



40250 2N6260 2N3054 2N6261 
40250V1 40910 40372 40911 



Features: 

■ fy = 800 kHz at 0.2A (2N3064, 
40372) 

■ Maximum safe-area-of-operation 
curves for dc and pulse operation 

■ VcEV( sus > = 90 V min (2N3054, 
2N6261) 

■ Low saturation voltage: VcE(sat) = 
1.0 Vat lc = 0.5A(2N3054) 

Applications: 



' COLLECTOR-TO-BASE VOLTAGE V CB0 

COLLECTOR-TO-EMITTER VOLTAGE: 

' With base open ^CEO 

1 With external base-to-emitter 

resistance (R B e) = lOOfi Vcer(sus) 

With base reverse-biased 

(V BE = -1.5 V) V CEV (susl 

' EMITTER-TO-BASE VOLTAGE V EB0 

' CONTINUOUS COLLECTOR 

CURRENT tC 

•CONTINUOUS BASE CURRENT I B 

* TRANSISTOR DISSIPATION: P T 

* At case temperature up to 25°C 



At ambient temperatures up to 25°C 



29 


29 


25 


50 


(40250) 


(2N6260) 


(2N3054) 


(2N6261 1 


5.8 


5.8 


5.8 


5.8 


(40250V 1) 


(40910) 


(40372) 


(40911) 



At temperatures above 25°C 

' TEMPERATURE RANGE: 

Storage & Operating (Junction) .... 
PIN TEMPERATURE (During soldering): 
At distance > 1 /32 in. (0.8 mm) 
from seating plane for 10 s max. . . . 



-Derate linearly to 200 C - 



•In accordance with JEDEC registration data format JS-9 RDF-10 (2N3054), JS-6 RDF-2 (2N6260, 2N626D 




COLLECTOR-TO-EMITTER VOLTAGE (V CE )— V 

Fig. 1— Maximum operating areas for 2N3054 and 2N6260. 



IO0 

92SS-3363R2 



Power switching circuits 

Series- and shunt-regulator driver and 

output stages 

High-fidelity amplifiers 

Solenoid drivers. 

TERMINAL DESIGNATIONS 




JEDEC TO-66 
2N3054. 2N6260. 2N6261, 40260 



JEDEC TO-66 with Heat Radiator 
402S0V1, 40372, 40910, 4091 1 



\ 90 
*| 80 

i j 

»o60 
i SO 

30 


CASE TEMPERTUREIT C I.25"C 


"I 






1 






Tl 


















\ 


1 






, 










2^ 


61-, 


091 




1 














































T 








'CE 










2*30 


34- 


403 


ri- 


1 


! 


CEO 


ti 


" _ 


1 






| 




J 


i 






















S«*j 


60- 


409 


ci 
























[ " 


, v CE0 

























EXTERNAL BASE-TO-EMITTER RESISTANCE tR BE ) — O 

Fig. 2 — Sustaining voltage vs. base-to-emitter 
resistance for 2N3054, 2N6260, 
2N6261, 40372, 40910 and 4091 1. 

69 



POWER TRANSISTORS 



2N3054, 2N6260, 2N6261, 40250, 40372, 40910, 40911 

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tel ' 25°C un/ess otherwise specified 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6260 
40910 


2N3054 
40372 


2N6261 
40911 


40250 
40250V1 


VCE 


VBE 


■c 


"B 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


" Collector -Cutoff Current: 
With base open 


'CBO 


VCB = 
30 




l E = 


















1 


mA 


'CEO 


30 
60 










- 


1 


- 


0.5 


- 


0.5 


- 


- 


With base-emitter 

junction reverse-biased 


'CEV 


40 
80 
90 


-1.5 
-1.5 
-1.5 






- 


5 


- 


1.0 


- 


0.5 


- 


- 


AtT c = 150°C 


'CBO 


VCB = 
30 




l E = 


















5 


'CEV 


40 
80 
90 


-1.5 
-1.5 
-1.5 






- 


25 


- 


6.0 


- 


1.0 


- 


- 


Emitter -Cutoff Current 


!EBO 




-5 
-7 








- 


5 


- 


1.0 


- 


0.2 


- 


5 


mA 


Collector -to-Base 
Breakdown Votlage 


V (BR)CBO 






0.05 




- 


" 


- 


- 


- 


- 


50 


- 


V 


Collect or-to-Emitter 
Breakdown Voltage 


V (BR)CEV 




-1.5 


0.05 
















50 


- 


V 


Collector-to-Emitter 
Sustaining Voltage: 
With base open 


v CEO (susl 






0.1 a 





40 




55 




80 




40 




V 


With external base-to-emitter 
resistance (Ft be' = 100S2 


V CER (sus) 






0.1 a 




45 




60 




85 








Emitter-to-Base 

Breakdown Voltage 
IE = 0.005 mA 


V IBR)EBO 






















5 


- 


V 


DC Forward-Current 
Transfer Ratio 


hFE 


2 
2 
4 
4 
4 




4 a 
1.5 a 

3 a 
0.5 a 
1.5 a 




3 
20 


100 


5 
25 


150 


5 
25 


100 


25 


100 




Collector-to-Emitter 
Saturation Voltage 


Vcg(sat) 






0.5 a 

1.5 a 

3 a 


005 a 

0.15 a 

1 a 


: 


1.5 


- 


1.0 
6.0 


- 


0.5 


~ 


1.5 


V 


Base-to-Emitter Voltage 


V B E 


2 
4 
4 




1.5 
1.5 
0.5 




- 


2.2 


" 


1.7 


- 


1.5 


- 


2.2 


V 


Common-Emitter Small-Signal 
Short-Circuit, Forward 
Current Transfer Ratio 
Cutoff Frequency 


f hfe 


4 




0.1 




0.03 


" 


0.03 


- 


0.03 


- 


- 


- 


MHz 


Magnitude of Common-Emitter, 
Small-Signal, Short-Circuit 
Forward Current Transfer 
Ratio (f « 0.4 MHz) 


l"fel 


4 




0.1 




2 


- 


- 


- 


2 


- 


- 


- 




Common-Emitter, Small- 
Signal, Short-Circuit 
Forward Current 
Transfer Ratio (f = 1 kHz) 


h fe 


4 




0.1 




25 




25 


- 


25 


- 


- 


- 




Forward-Bias Second 
Breakdown Collector 
Current (t • 1 s) 


'S/b 


40 
80 
55 








0.725 


- 


0.455 


- 


0.625 


- 


- 


- 


A 


Thermal Resistance: 
Junction-to-Cate 


R0jc 










6 (max.) 
2N6260 


7 (max.) 
2N3054 


3.5 (max.) 
2N6261 


6 (max.) 
40250 


°C/W 


Junction -to-Ambient 


RfljA 










30 (max.) 
40901 


30 (max.) 
40372 


30 (max.) 
40911 


30 (max.) 
40250V 1 



"Pulsed: Pulse duration ° 300 /is duty factor * 1.8%. *ln accordance with JEOEC registration data format JS-9 RDF-10 (2N3054) JS-6 RDF-2 (2N6260-61) 



70 



. POWER TRANSISTORS 



2N3054, 2N6260, 2N6261, 40250, 40372,40910, 40911 




Fig. 3 - Thermal-cycling rating chart 
for 2N3054. 



1 

» 

i'° 

s > 
a ' 

I * 

t 




1 1 1 

^jMAX^OCC 














'X 


N 


N 


s 






















-i£* 




















f$s 
























v 




\ 
















^ 


%: 



»« 



io» 



NUMBER OF THERMAL CYCLES »cs-,»21 

Fig. 4 ■ Thermal-cycling rating chart for 
2N6260. 



* 

a 
« a 

I 




. | ill 

^4-Tj MAX,.?O0*C 






! 


I 




\ 






IN, 












\ 






















\ 




\ 














V 








\ 


\ 


\ 




\ 













NUMBER OF THERMAL CYCLES 9JCS-I952I 

Fig. 5 - Thermal-cycling rating chart for 
2N626I. 




nmmmm 




I * - - 10 ■ " "100 
COLLECTOR— TO— EMITTER VOLTAGE (V Cf£ ) — V 

9 

Fig. 6 ■ Maximum operating areas for 2N6261. 




SA3E-T0-EMITTER VOLTABCIVgjI V 



Fig. 9 - Typical input characteristics for 

2N3054, 2N6260, 40250, 40250V I, 
40372. and 40910. 



•0 


COUI 


ECTOR-TO 


EMITTED VOLTAGE [W** 










frifmtf" iff 






1 

1 •♦ 






lllllllll|I^.CTgnffiii 





















I" 






HI III 












16 













as 1.0 1.5 2.0 2.9 

BASE-TO-EMITTER VOLTAGE (VgE>~ v 

Fig. 10 - Typical input characteristics for 
2N626I and 40911. 



CASE TEMPERATURE (T C I'2S*C 














































































































































'I 

3 
2 i 

, i 

3 






























•n; 




























1:11 


~ 














- 


- 


- 


:::: 
























• + 




:' ' 






MINIMUM (R BE 


■1000) 






p= 


3S 






















■■; MINIMUM (RajE-lOa)-^ 




3Hl 


: : ' 




■ : 






i;;;i!!!il:-:iliii!|;:;:li!;:|:;::ii;; 


K 



BASE-TO-EMITTER VOLTAOE ( V B _ I — V 

Fig. 7 • Reverse-bias second-breakdown 
characteristics for all types. 



COLLECTOR-TO-EMITTER VOLTAOE IVrrl -4V 
CASE TEMPERATURE <Tc)'2S - C 
















14 

a 

- .2 
| 0.8 






















































































\/ 




























/ 






















































































































i 

o.« 































































































COLLECTOR CURRENT (I c >— l»A »jcs-l2Mim 

Fig. 8 - Typical gain-bandwidth product 
for all types. 




COLLetTOR-TO-EMITTCR VOLTAOE (V«)-V 



Fig. 11 — Typical output characteristics for 
2N3054 and 40372. 



71 



POWER TRANSISTORS 



2N3054, 2N6260, 2N6261, 40250, 40372, 40910, 40911 




COLLECTOR- TO-EMITTER VCLTME (V C £ ) - V 



Fig. 12 — Typical output characteristics for 
2N6260 and 40910. 




20 JO 40 90 to 

COLLCCTOR-TO-EMITTtR VOCTMl ( V a ) - V 

Fig. 13 — Typical output characteristics for 
2N6261 and 40911. 




■tes-mwt 

Fig. 14 — Typical transfer characteristics for 
2N3054, 2N6260, 40250, 
40250V1, 40372 and 40910. 




MSE-TO-tMITTER VOLTME IV K )-V 



Fig. 15- Typical transfer characteristics for 
2N6261 and 4091 1 . 




Fig. 16 — Typical input characteristics for 
2N6260, 40250, 40250V 1, 
40372 and 40910. 



COLLECTOR-TO-EMITTER V0LT40E (V CE >-4V 












•a 200 

1 
9 
% i*o 

i 

i 

3 *° 

c 

i .0 

| 
« o 










1 1 






















































., 


,25-C 










































& 






















~4 


<g 






































































































































0.601 




001 








LI 






* 


.0 


* 



COLLECTOR CURRENT (I<;>—» szcs-aswm 

Fig. 17 — Typical dc beta characteristics for 
2N6260 40250, 40250V 1 and 
40910. 



COLLECTOR- TD-EMITTER VOLTAGE (V CE >- 4V 












y 20 

I * 

Ik 
5 n 

E 

I « 
S 

| 24 

S 

8 








1, 
























s t" 


"> 


s 




















■' U< 




V 



















\^ 






















A 


*v 






















4 


ty 






































































\\ 


























^ 










- 




... 















COLLECTOR CURRENT (I c >-A 

Fig. 18 ■ Typical dc beta characteristics for 
2N6261 and 40911. 



COLLECTOR-TO-EMITTER VOLTAOE !V CE I- 4V 












-5,100 

£ 

g eo 

| 60 

E 

£ 40 

s 

f zo 

8 o 








" ! 






















A u 


*\ 




















-' .U 


c 


\ 
















'* 


L^i 




















,4 


M 




















<* 


^ 






































' 


s 
























\\ 
























\ 














- 


■■ 


..... 











COLLECTOR CURRENT (I(;l-A 

f ig. 19 — Typical dc beta characteristics for 
2N3054 and 40372. 



72 



POWER TRANSISTORS 



2N3055, 2N6569, RCS617, BDX18, 2N6594, RCS618, MJ2955 
Silicon N-P-N and P-N-P Epitaxial-Base High-Power Transistors 

Rugged, Broadly Applicable Devices 
For Industrial and Commercial Use 



The RCA-2N6594, BDX18, MJ2955, and 
RCS618 are epitaxial-base silicon p-n-p tran- 
sistors featuring gain at high current. The 
RCA-2N6569, 2N3055, and RCS617 are 
epitaxial-base silicon n-p-n transistors. They 
may be used as complements to the 2N6594, 
BDX18 or MJ2955: and RCS61 8, respectively. 
These devices have a dissipation capability of 
100 watts (2N6569and2N6594), 115 watts 
(2N3055, BDX18, RCS617, and RCS618), 



and 150 watts (MJ2955) at case temperatures 
up to 25°C. 

They differ in voltage ratings and in the 
currents at which the parameters are con- 
trolled. All are supplied in the steel JEDEC 
TO-204MA hermetic package. 
The 2N3055 is also available in a hometaxial- 
base version. To obtain the hometaxial-base 
type order the 2N3055 (Hometaxial). 



MAXIMUM RATINGS, Absolute-Maximum Values: 

N-P-N 



R BE = 100 si. 



AtT c <25°C 
At TV>25°C 



Derate linearly 



Tctn- Tl 



At distanced 1/32 in. (0.8 mm) from seating 
plane for 10 s max 



* 2N-types in accordance with JEDEC registration data. 

* For p-n-p devices, voltage and current values are negative. 



2N6569 



2N3055 



RCS617 



P-N-P 2N6594* 



BDX18* RCS618* 
MJ2955* 

45 100 100 V 



45 
40 

5 
12 
24 

5 
17 



I 150 (MJ2955) 
\ 115 (Others) 
J 0.86 (MJ2955) 
\ 0.66 (Others) 



-65 to 200 



85 

80 

7 

15 



0.66 



V 
V 
V 
A 
A 
A 
A 

W 

W/°C 

°C 



Features: 

■ High dissipation capability 

■ Low saturation voltages 

■ Maximum safe-area-of- 
operation curves 

■ Hermetically sealed JEDEC 
TO-204MA package 

■ High gain at high current 

Applications: 

■ Series and shunt regulators 

■ High-fidelity amplifiers 

■ Power-switching circuits 

■ Solenoid drivers 

TERMINAL DESIGNATIONS 



c 

(FLANGE) 




o 



o 



JEDEC TO-204MA 



" IOO 
5uj80 
£§60 

° 40 
5 20 


:::! 


It:: 


















































































































































































<^ 


















*>>„' : 






































Iv'V 

















































Fig. 1 — Derating curve. 



100 

6 - 

* 
1 

8 ' 

1 

Ul 2 - 
10 






















'"S^ T J 


MAX. -2 


0CC 
















-->> 


N§5 


*\, 
















\ 




X 




\ 




<?, 








n 


\ 








>§v 


fc 







NUMBER OF THERMAL CYCLES 



K>« 
«CS- 



Fi9- 2 — Thermal cycling rating chart for 
2N6S69 and 2N6594. 



100 

* e 

I 

I * 

s 

£ i- 

* 

10 


1 1 1 








1 




S^-T 


(MAX)- 200'C 








1 






>w e 


^ 


% 








fc\ 


Y 






X 
X 




t*» 










Xf 


3. 





NUMBER OF THERMAL CYCLES 



Fig. 3 — Thermal-cycling rating chart for 2N30SS, 
BDX18, BCS617and RCS618. 



150 


sTj MAX-200*C 


















* " > °^ 






















1 






- 




* 














o * ' 
1 


1 \ 


"x.^. 


&» 
X 


— 










^*J 




' 










°A 




— 


V 

1 




"*•/ 

^ 


^ 






— 


M 


i 




\° 











MBER OF THERMAL CYCLES 



Fig. 4 — Thermal cycling rating chart for 
MJ2955. 



♦ For p-n-p devices, voltage and current values are negative. 



73 



POWER TRANSISTORS 



2N3055, 2N6569, RCS617, BDX18, 2N6594, RCS618, MJ2955 

ELECTRICAL CHARACTERISTICS, at Case Temperature (T c ) = 2&>C Unless Otherwise Specified 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6S69 
2N6S94« 


2N3066 
BDX18* 
MJ2955* 


RCS617 
RCS618* 


V C E 


V B E 


'c 


•b 


M)N. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


'CEX 2N3055, 8DX18 
MJ2955 
RCS617, RCS618 


45 
100 
100 
100 


-1.5 
-1.5 
-1.5 
-1.5 






- 


1 


- 


5 

1 


- 


1 


mA 


I CEX ,T C =100°C 


Jll 


-1.5 






- 


10 


- 


- 


- 


- 


mA 


ICEX' MJ2955 

T C =150°C 2N3055 

BDX18 


100 
100 
60 


-1.5 
-1.5 
-1.5 






— 


- 


- 


5 
30 
10 


- 


5 


mA 


'ceo 


30 









'- 


0.7 


- 


0.7* 


- 


0.7 


mA 


'ebo 

2N3055, BDX18 
MJ2955 
RCS617, RCS618 




5 
7 
7 
7 










- 


5 


- 


5 
5 


- 


1 


mA 


V CE0 (sus) 






0.2 





40b 




60b 




80b 




V 


V CER (sus) 
R BE = 10012 






0.2 





45b 




70b* 




85b 


- 


V 


hFE 

Except BDX18 


3 

4 
4 
4 
4 




4a 
4a 
5a 
10a 
12a 




15 
5 


200 
100 


20 
5 


70 


20 


70 




V B E 


4 
4 




4a 
5a 






1.8* 




1.8* 




1.8 


V 


V BE (satl 






4 
4 


055 
04 




2 
2 










V 


V CE (sat) 

2N3055only 
MJ2955 only 






4a 
4a 
5a 
10a 
10* 
12a 


04 
055 
05 
33 
33 
24 




1.5 
1.5 

4 




1.1 

8 
3 




1.1 


V 


f T 2N6569 
f = 05MHz 2N6594 


4 
4 








15 
2.5 










_ 


MHz 


f hfe 2N3055 
f = 10 kHz MJ2955 


4 
4 












20 
10 








kHz 


|h fe | f = 1 MHz 

MJ2955 (only) 


4 
4 




0.5 




- 




25 
4 




25 


- 




h fe 

f = 1 kHz 


4 




1 




15 


. 


15* 


1 20* 


15 


_ 




! S/b 

tp = 1 s nonrep. 


40 








2.5 


- 


2.87 


- 


2.87 


- 


A 


c obo 

V CB =10V,f= 1MHz 










75 


750 


- 


- 


- 


- 


pF 


'd v cc = 30 V 






2 


0.2 


- 


0.4 


- 


- 


- 


- 


Ais 


1 'SI = 'bS 






2 


0.2 


- 


1.5 


- 


- 


- 


- 


t s 






2 


0.2 


- 


5 


- 


- 


- 


- 


l f 






2 


0.2 


- 


1.5 


- 


- 


- 


- 


2N3055.BDX18 
R 0JC MJ2955 










- 


1.75* 


- 


1.5 
1.17 


- 


- 


°C/W 



* For p-n-p devices, voltage ind current values are nagativt 

* 2N typai in accordance with JEDEC rtgiitration data. 
' Pulttd; pulu duration » 300 mi. duty factor • 1 .8%. 



b CAUTION: Sustaining voltages V ce q(jusI and 
>(sus) MUST NOT be measured on a curvt 



_ J60 
"300 

X 

2 240 

I 

*- ISO 

z 

K 

3 120 

§ 60 

S 


COLLECTOR-TO-EMITTER VOLTAGE (V CE )-4V 
CASE TEMPERATURE {T C )-25"C 




I IN 


1 III 


' 


























X I 






\ 



COLLECTOR CURRENT (I r l — A 



Fig. 5 — Typical dc beta characteristics.* 



t 

i 7 


COUKTOH-TO-IMITTCR VOLTAOf (V cc ) • 4 V 
CASE TEMKRATURC (T c ) ■ IVC 


































£ 




























X 






















































1 1 




























! ■ 
























































, 






• 




4 




■ 













COLLECTOR CURRENT ( t c ) — A tics-MOO* 

Fig. 6 — Typical gain-bandwidth product.* 




8ASE-T0-EMITTER VOLTAOE (V <E )-V 



Fig. 7 — Typical input characteristics* 




io to so 40 so ao to ao to too 

COLLICTOR-T0-EMITTER VOLTAOE IV et )- V 

9tCS-2tOO« 

Fig. 8 — Typical output characteristics* 



•For p-n-p devices, voltage and current values are negative. 



74. 



POWER TRANSISTORS 



2N3055, 2N6569, RCS617, BDX18, 2N6594, RCS618, MJ2955 




10 "■ ' - J IOO ' . - - |000 

COLLECTOR-TO-EMITTER VOLTAGE (V CE )- V 92 cs-2900IRI 

Fig. 9 — Maximum operating areas for 2N3055 and RCS617. 




COLLECTOR-TO- EMITTER VOLTAGE (V CE ) — V 



92CS -29002 



Fig. 10 - Maximum operating areas for 2N6569 and 2N6594* 
♦ For p-n-p devices, voltage and current values are negative. 



75 



POWER TRANSISTORS 



2N3055, 2N6569, RCS617, BDX18, 2N6594, RCS618, MJ2955 



CASE TEMPERATURE(T C )^25 # C 
(CURVES MUST BE DERATED 

LINEARLY WITH INCREASE 

IN TEMPERATURE) 




I ' " D "Id ' " " °IOO 

COLLECTOR- TO-EMITTER VOLTAGE (V CE )-V 

92CM- 30558 

Fig. 11 — Maximum operating areas for BOX 18. MJ2955 and RCS618* 





OLLECTOR- TO- EMITTER VOLTAGE (V CE )-4 V B j 


ill!? 


? 
















W 


in 


^ I 
















p* 


jii 


i l0 l 


[l| 


I 






ptji 






'itji 






HfHilSl 




~ \ 








n 


#n 








{{jfflttif 




1 1 




ptf 










::: 






iztz 








fc 


*(* 


;:| 


















? l 








? 




• fr 










s i 








*J 




; ii 










8 I 






S 














| :[ll 
















zi 























BASE-TO-EMITTER VOLTAGE (V BE ) - 



F/flr. 72- Typical transfer characteristics/ 



100 
5 * 90 

1 1 

fl 80 

Cu 70 
o 3 

ii «, 

Sg 

3 z 

§< *> 

is 

40 
30 


CASE TEMPERATURE <T c )-25' C 










1 


1 II! 








III 












Vcer(ui) 










"CS6I7 
"CS6/8 










1 


1 III 










V CE0 Uul) 


vcepl.0.) 










J! 


J ?9 




























** 


55 




*CEO< 


.1, 
































Vcer(wi) 








1 




69 
94 


■— - 




























T 


V ce0 <im) 

































KXW 



2 4 68 2 4 68 2 4 66 2 4 68 2 
I 10 KDO IK IOK 

EXTERNAL BASE -TO -EMITTER RESISTANCE <R BE > — Q 

92CS-29008R 

Fig. 13 - Sustaining voltage vs. base-to-emitter 
resistance.* 



♦ For p-n-p devices, voltage and current values are negative. 



76. 



POWER TRANSISTORS 



2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251 



Hometaxial-Base High-Power 
Silicon N-P-N Transistors 

Rugged, Broadly Applicable Devices 
For Industrial and Commercial Use 



The RCA-2N3055 (Hometaxial)*, 2N6253, 
2N6254 and 2N6371 are silicon n-p-n tran- 
sistors intended for a wide variety of high- 
power applications. The hometaxial-base con- 
struction of these devices renders them highly 
resistant to second breakdown over a wide 
range of operating conditions. 

These devices differ in maximum ratings for 
voltage and power dissipation. All are sup- 



plied in JEDEC TO-204MA hermetic steel 
packages. 

The 2N3055 is also available in an epitaxial- 
base version. To obtain the hometaxial-base 
type described in this data sheet, order the 
2N3055 (Hometaxial). 



Formerly 2N3055H. 



MAXIMUM RATINGS, Absolute-Maximum Values: 

2N3055 

... ... 2N6253 2N6254 2N6371 40251 

(Hometaxial) 

* v CBO • ; 10 ° 55 10 ° 50 50 

* v cer' sus * 

R BE = 100fi 70 55 85 45 

* v CEO (sus) 6° 45 80 *° 

V CEV (sus) 

V BE = -1 .5 V 90 55 90 50 

* V EB0 7 5 7 5 

* l c 15 15 15 15 

* 'B ■•■•■ 1 111 

<25°C 115 115 150 

>25°C Derate linearly to 200°C 

* T,,-^ -65 to +200 

* T|_: During soldering, at distances 

1/32 in. (0.8 mm) from seating 

plane for 10 s max — 235 

*ln accordance with JEDEC registration data formats JS-9 RDF-10; 2N3055 (Hometaxial) 
JS-6 RDF-2; 2N6253, 2N6254, 2N6371 . 



— 


V 


40 


V 


50 


V 


5 


V 


15 


A 


7 


A 



Features: 

■ 2N6254: premium type from 2N3055 
(Hometaxial) family 

■ Maximum safe-area-of -operation curves 

■ Low saturation voltages 

■ High dissipation capability 

■ Thermal-cycling rating curves 

Applications: 

■ Series and shunt regulators 

■ High-fidelity amplifiers 

■ Power-switching circuits 

■ Solenoid drivers 

■ Low-frequency inverters 

TERMINAL DESIGNATIONS 

c 

(FLANGE) 




JEDEC TO-204MA 



•to 

8- 




























































































n 
























fc 


















<;» mi i ii 















29 50 73 100 129 190 179 200 

CASE TEMPERATURE <T C ) — 'C 



Fig. 1 — Current derating curve for all types. 



COLLECTOR-TO-EMITTER 


VOLTAGE (V CE >'«V 


















































i L6 
































t l2 




























































































i H 
































1 a< * 
































< 

































































































COLLECTOR CURRENT (!<;)— A 

Fig. 2 — Typical gain-bandwidth product 
for all types. 



COLLECTOR-TO-EMITTER VOLTAOE (Vce)'4V 








_ 80 

S 

* 60 

i 
t - 

z 

I 

£ 20 

i 

o q 








5_ 
















J 


Y"" 




















.r'v 












s 




















<fS 


$T 














-<£ 
















"f 








S"S 






C# 






























v\ 


















y 






































rv 


















N S 


















\ 


















x 






— I - 


i 




I — J- 









COLLECTOR CURRENT (I c l-A 

9fcs-»: 

Fig. 3 — Typical dc-beta characteristics for 
2N3055 (Hometaxial) and 2N6371. 



77 



POWER TRANSISTORS 



2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251 



ELECTRICAL CHARACTERISTICS, Tq = 25°C Unless Otherwise Specified. 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N3055 
(Home- 
taxial) 


2N 


5253 


2N 


3254 


2N6371 


4Q251 


V C E 


V B E 


ic 


>B 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN 


MAX. 


ICEO 


25 
30 
60 











- 


0.7 


- 


1.5 


- 


1 


- 


1.5 


- 


- 


mA 


!CEX 


40 
45 
55 
100 


-1.5 
-1.5 
-1.5 
-1.5 






- 


5 


- 


2 


- 


0.5 


- 


2 


- 


2 


mA 


T C = 1 50°C 


40 
50 
100 


-1.5 
-1.5 
-15 






_ 


30 


~ 


10 


- 


5 


- 


10 


_ 


10 


!EBO 




-5 
-7 






- 


5 


- 


10 


- 


0.5 


- 


- 


- 


- 


mA 


v (BRICBO 






0.1 




















50 


- 


V 


V (BR)CEV 




-1.5 


0.1 




- 


- 


- 


- 


- 


- 


- 


- 


50 


- 


V 


v (BR)EBO 
l E = 0.01 mA 



























5 


- 


V 


V CE0 (sus) 






02 a 





60 


- 


45 


- 


80 


- 


40 


- 


40 


- 


V 


V CER (sus) 
RgE = 100^2 






02 a 




70 


- 


55 


- 


85 


- 


45 


- 


- 


- 


V CEV' SUS ' 




-1.5 


1 a 




90 


- 


55 


- 


90 


- 


50 


- 


- 


- 


"FE 


4 
4 
2 
4 
4 
4 
4 




3 a 
4 a 
5 a 
8 a 
10 a 
15 a 
16 a 




20 

5 


70 


20 
3 


70 


20 

5 


70 


15 
4 


60 


15 


60 




V B E 


4 
4 
2 
4 
4 




3 a 
4 a 

5 a 
8 a 
16 a 




" 


18 


" 


1.7 


_ 


15 


_ 


4 


- 


22 


V 


V CE lsat) 






3 a 
4 a 

5 a 
8 a 
10 a 
15 a 
15 a 
16 a 


03 a 

04« 

05 a 

0.8 a 

33 a 

3 a 

5 a 

4 a 


- 


11 
8 


- 


1 
4 


- 


0.5 
4 


- 


1.5 
4 


- 


1.5 


V 


h fe 

f = 1 kHz 


4 




1 




15 


120 


10 


- 


10 


- 


10 


- 


- 


- 




'T 






1 




800 


- 


- 


- 


- 


- 


800 


- 


- 


- 


kHz 


Ihfel 
f = 0.4 MHz 


4 




1 




- 


- 


2 


- 


2 


- 


2 


- 


- 


- 




f hfe 


4 




1 




10 


- 


10 


- 


10 


- 


- 


- 


- 


- 


kHz 


'S/b 
t p = 1 s 
nonrep. 


39 
40 
45 
60 
80 








2.9 
1.95 


- 


2.55 


- 


1.87 


- 


2.9 


- 


3 


- 


A 


H0JC 










- 


1.5 


- 


1.5 - 


1.17 


- 


1.5 


- 


1.5 


°C/W 



* In accordance with JEDEC registration data formats JS-9 RDF-10: 2N3055H; JS-6RDF-2: 2N6253, 2N6254, 2N6371 . 
a Pulsed : Pulse duration = 300 /is, duty factor = 1 .8%. 



78. 



POWER TRANSISTORS 



2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251 



CAM TEMPERATURE <T C )»28*C 
(CURVES MUST SC DERATED LINEARLY 
WITH INCREASE IN ' 




COLLECTOR-TO-EMITTER VOLTAGE (V CE )-V 



•2II-33«4R3 



Fig. 4 - Maximum operating areas for 2N62S3 and 2N30S5 (Hometaxial). 



CASE TEMPERATURE (T C )*25*C 
(CURVES MUST BE DERATED LINEARLY! 




I " " ' 10 

COLLECTOR- TO- EMITTER VOLTAOE (VfcjHV 



t2CS-l»4SSAI 



Fig. 7 — Maximum operating area* for 2N62S4. 



COLLECTOR-TO-EMITTER VOLTAOE (V C E>'« V 










*u 90 
I 

< 

S 

§ to 

O 

i 

8 o 






















































































































^ 
























— • "f"' ^ 
















."" 






1 ■*^ 












.S 
























. / 




lk 


T^»* C 






^ 






/* 


fO^L 














\ 






<£j 


Sv* 


















X 


























\ 




























s>. 


























V 


























> 






■ 








' 






• 








• 



COLLECTOR CURRENT U c )— A 



Fig. S — Typical dc-beta characteristics for 2N62S3. 



COLLECTOR-TO-EMITTER 


VOLTAOE (Vf») 


■IV 












Tg 100 

|.o 

P- 

a 
1 40 

o 

1 ao 

8 o 






















































,i 




























































































,* 






















S 






* 
























V 






















1^ 


*.' 












\ 






























& 










































\ 




















































s 


























\ 














































































































. 


' 




■ 








• 








• 


n 



COLLECTOR CURRENT (I c l — A 

»2CJ-H4«S 

Fig. 6 — Typical dc-beta characteristics for 2N62S4. 



ISO 

> 

J. •■ 
3 , 




I 












'>< T J 


I 

MAX. • ZOO* 




























^r^- 
















x>. 


















<S 












i 

s 

s 

I - 






















w 






xj 




^ 






fr\ 


^v 






v. 










I0 4 






i a 


10 s 


t 




* • 


»• 



NUMBER OP THERMAL CYCLES 

ttcs-toaso 

Fig. 8 — Thermal-cycling rating chart for 
2N30SS (Hometaxial). 2N6253 
and2N6371. 



■ — IW 

y 100' 
1 

i • 
2 

5 * 

I | 

I 

15 


1 1 
k /Tj MAX.-MO'C 




































VSi, 












%^r v 














iS 
















ft*. 








1 \ 






sS 








V 


As 






*S»y 


^ 




M- 


^ 

c 


Y 









• • • ,o» » * • • 10* » 

NUMIER OF THERMAL CYCLES 



F/y. S — Thermal-cycling rating chart for 
2N62S4. 



79 



POWER TRANSISTORS 



2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251 




Fig. 10 — Maximum safe-area-of-operation at case temperature of 2& > Cfor 2N6371. 




COLLECTOR -TO- EMITTER VOLTA8E (Vc£>— V 



Fig. 11 — Maximum safe-area-of-operation at case temperature of 10<fiC for 2N6371. 



80. 



POWER TRANSISTORS 



2N3055 (Hometaxial), 2N6253, 2N6254, 2N6371, 40251 




BASE-TO-EMITTER VOLTAGE <Vbe>— V 

92CS-I232«ftl 

Fig. 12 — Typical transfer characteristics for 
2N62S3, 2N3055 (Hometaxial). 
2N6371 and 40251. 



I 1.8 2 2.8 8 

BASE-TO-EMITTER V0LTA8E (Vgp;)— V 

9tC«-lt441 



Fig. 13 — Typical transfer characteristics for 
2N6254. 




BASE-TO-EMITTJER VOLTAOEIVgjI— V 

MCtHUOm 

Fig. 14 - Typical inpiit characteristics for 
2N3055 (Hometaxial), 2N6371 
and 40251. 



COLLEC 


TOR- 


rO-EMITTER 


VOLTAGE (Vce>'^ V^Hlllllilllllllllllll 


I 
„ 0.8 

x 

z 

0: 

3 0.4 

< 

« 0.2 






li;|.lii||t}jp /JjI'^Hf 




! I I : : I [ I '«yymffi*>S6 












WhB 






MM 




■tj'itiftnj'jffi 


i^/IKfl'PhiPI 
yifflTElHTlPi 

■TAfl 1 1 1 1 1 ' ' 1 1 ' 1 II 1 1 1 1 1 [ 



0.8 I 



BASE-TO-EMITTER V0LTA8E < VgE > — V 

92CS-I9440 

Fig. 15— Typical input characteristics for 
2N6253. 





Fig. 16— Typical input characteristics 
for 2N6254. 



Fig. 17 — Typical output characteristics for 
2N3055 (Hometaxial) and 2N6371. 



CASE TEMPERATURE (T C I-2S # C 




Fig. 18 — Typical output characteristics for 
2N6253. 



























































































































































































































7 «> 
5- 

K 7.8 

Is 

1,8 


































* a 480- 


































T'Tr" 


































































:ba 


SE CURRE 


ht (i B )-e 


n'm*| m^*|| (,| | | 




































i 



























20 SO 40 90 SO 70 80 

collector-to-emitter voltase iv ce i— v 

92CS-I9439 

Fig. 19 — Typical output characteristics 
for 2N62S4. 



CASE TEMPERATURE <T e )'2S*C 


















100 

> 

£i 1 so 

ST 
































































VC 


ER 


•all 










z m 




























-^ 






veto <••»> 


s¥ TO 

ds 80 

t 

i »40 
































VCER 1 


■u«) 










s 




























*8*f.„ 


































VCEO 


•M) 




VCER 


■ml 


























1 1 1 








^aj 


"i 














JcerI— > 






**ejy 








VC(0»»j> 
























VcEo""'' 


























| 




























| 


1 








6 






6 


S 




6 






9 


I 




• • 



Fig. 20 — Sustaining voltage vs. base-to-emitter 
resistance for all types. 



81 



POWER TRANSISTORS ±. 



2N3263-2N3266 

High-Power, High-Speed, High-Current 
Silicon N-P-N Power Transistors 

Epitaxial Types for Aerospace, Military, and Industrial Applications 



RCA-2N3263, 2N3264, 2N3266, and 2N3266* are n-p-n 
epitaxial silicon power transistors designed for high-reliability 
aerotpace, military, and industrial equipment. Their high 
current-handling capability and fast switching speed make 
them desirable In applications where high circuit efficiency is 
required. 

The 2N3263 and 2N3264 are sealed in flat 3/4-inch- 
diameter packages with radial leads. Types 2N3265 and 
2N3266 utilize the JEDEC TO-63 package. 



Typical high-speed switching applications fir these transis- 
tors Include switching-control amplifiers, power gates, 
switching reguletors, dc-dc converters, and dc-ac inverters. 
Other recommended applications include dc-rf amplifiers and 
power oscillators, 

• Formirly RCA Dev. Not. TA2492. TA2493, TA2494, and TA249S, 
raipactlvely. 



MAXIMUM RATINGS, Absoluta-Mtximum Valuts: 

' COLLECTOR-TO-BASE VOLTAGE VcBO 

COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: 

With 1.5 volts (Vbe) of reverse bias VcEX(» u| ) 

With external base-to-emitter resistance (Rbe) S 60J1 VcER(sus) 

' With base open VCEO * sus ' 

' EMITTER-TO-BASE VOLTAGE V£BO 

'COLLECTOR CURRENT IC 

'BASE CURRENT IB 

' TRANSISTOR DISSIPATION Pt 

'TEMPERATURE RANGE: 

Storage and opereting (Junction) 

LEAD TEMPERATURE (During soldering): 

At distance ^ 1/32 in. (0.8 mm) from seating plane for 

10 s max 

' In accordance with JEDEC regiitration data format. 



2N3264 




2N3263 


2N3266 




2N3266 


120 




150 


120 




150 


80 




110 


60 




90 


7 




7 


25 




25 


10 




10 


£m Figi. 


1&2 





65 to +200 



Features: 

■ Low saturation voltages - 

2N3263 and 2N3265 

VcE(ut) - 0.75 V (max.) at lc • 15 A 
VBE<*at) - 1-60 V (max.) at lc - 15 A 

2N3264 and 2N3266 

Vce <«■«>■ 1-20 V (max.) at lc- 15 A 
Vbe (»") ■ 180 V (max.) at lc " 16 A 

■ High reliability and uniformity of characteristics 

■ High power dissipation 

■ Fast rise time at high collector current - 

0.2 ms at 10 A (typical) 

TERMINAL DESIGNATIONS 





2N3266, 2N3268 
IJEOEC TO-63) 



POX MAXIMUM CMC TfMWUTVMCS ACOVE 7e*C 












































12!; 




























5" : 
















i:| 


-SB 






MA 


am 

■*c 


nee tttttt 
eo-eov H±H± 












1 1 1 1 1 1 1 1 max. vcto-eov-i 

















»o eo 70 

C0UJtCTOR-T0-EMltTea VOLTAO* Nci>— V 



atca-iwsow 




Fig. 1 -Rating chart for 2N3265 and 2N3266. 



lo so «o so so to ao »o 

COLLECTOR-TO-EMITTER VOLTA8E <VfcE>— V 

»ZCS-IZ4UM 



Fig.2-Rating chart for 2N3263and 2N3264. 




• 9 l<SO 
COLLECTOR-TO-EMITTER VOLTAGE (V CE 1— V 

92CS- '2428*1 



Fig.3— Safe-operating region as a function 
of pulse width. 



CASE TEMPERATURE (T c )>!9'< 










. 


| 




^ i55 

I 

$ no 
j5 

I 100 
7- 

1 eo 






















































_. 




1 




































Sjaj 






| 


















«• 


2N3 


2*5 
























1 


































































3X*« 
























1* 8NS846 




















II 








4 1 


a 
10 


14 1 


a a 


1 4 i 


10 s 




10* 






d» 



EXTERNAL eASE-TO- EMITTER RESISTANCE (Rge) — fl 

»K>-it«« 

Fig. 4— Typical sustaining voltage vs. base- 
to-emitter resistance. 




BASE-TO-EMITTER VOLTAGE (Vaal— V 



Fig. 5— Typical input characteristics. 



{ollSctor^to-emitter voltaoe (VceI-j v 














l000 a 

< « 
t 

1 I00 : 

1 ! 

s ■ 

1 

■ — L 








































































,vs 






















^eti 






-£* 
























■£ 
























1 * 


g 














































m 
























rV 


— CT - ^ 


lj i 


i"" 


i 


i 




r _ " 




! 




4 


I.I 



BASE-TO-EMITTER VOLTAOE IVj[l— V 



Fig.6— Typical input characteristics. 



82 



.POWER TRANSISTORS 



2N3263-2N3266 



ELECTRICAL CHARACTERISTICS, At Case Temperature (Tg) * 25PC unless otherwise specified 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N3264 
2N3266 


2N3263 
2N3266 


Vcb 


VCE 


VEB 


>E 


IB 


"C 


MIN. 


MAX. 


MIN. 


MAX. 


Collector Cutoff Current: 
With emitter open 


•CBO 


60 
80 















- 


10 


- 


4 


mA 


AtTc- 125°C 


60 
80 














- 


10 


- 


4 


With base reverse- 
biased 


'CEX 




120 
150 


1.5 
1.5 








- 


20 


- 


20 


Emitter Cutoff Current: 


■EBO 






7 









_ 


15 


_ 


6 


mA 


AtTc="125°C 






7 









_ 


15 


_ 


5 


Emitter-to-Base Voltage 


VEBO 








0.02 







7 


_ 


7 


_ 


V 


Collector-to-Emitter 

Sustaining Voltage: 

With base open 


VcEO(sus)* 













0.2 


60 




90 




V 


With external base-to- 
emitter resistance 
(RBEK 50 n 


VcER(sus) # 













0.2 


80 


- 


110 


- 


Collector-to-Emitter 
Saturation Voltage 


VcE(sat)* 










2 
1.2 


20 
15 


- 


1.6 
1.2 


- 


1 
0.75 


V 


Base-to-Emitter 
Saturation Voltage 


VflElsat)* 










2 
1.2 


20 
15 


- 


2.2 

1.8 


- 


1.8 
1.6 


V 


DC Forward Current 
Transfer Ratio 


h FE « 




3 
3 
2 








5 
15 
15 


35 
20 


80 


40 
25 
20 


75 
55 




Second-Breakdown 
Collector Current: 

(See Fig. 3) 

DC forward-biased 


IS/b A 


50 
75 












700 


- 


350 


- 


mA 


Pulsed, forward- 
biased, tp - 250 ms 


75 












13.3 


- 


13.3 


- 


A 


Second- Breakdown Energy 
With base reverse- 
biased, and 
RBE-20JJ. L = 40mH 


E S/b" 






6 






10 


2 


- 


2 


- 


mj 


Saturated Switching Time: 
Turn-on (td + t r ) 


tON 


V CC = 
30 








1.2* 


15 


- 


0.5 


- 


0.5 


MS 


Storage 


«s 








1.2* 


15 


_ 


1.5 


_ 


1.5 


Fall 


tf 








1.2* 


15 


- 


0.5 


_ 


0.5 


Gain-Bandwidth Product 
(f - 1 MHz) 


*T 




10 








3 


20 


- 


20 


- 


MHz 


Collector-to-Base Feedback 
Capacitance 
(f - 1 MHz) 


Cob 


10 













_ 


500 


_ 


500 


PF 


Thermal Resistance 
(Junction-to-Case) 


R9JC 




10 








10 


2N3263 
2N3264 

- | 1.5 


2N3266 
2N3266 
- I 1 


°C/W 



In accordance with JEDEC registration data format. 
• Pulsad; pulsa duration ^ 3SO lit, duty factor <£ 7%. CAUTION: Tha sustaining voltagw V CEO (sus) and V CER (sus> MUST NOT ba maaauw 

on a curva tracar. Thaaa sustaining voltagss should ba maasurad by maans of last circuit . 
# * <S/b '• dafinad as tha currant at which sacond braakdown occurs at a apacif lad collsctor voltaga. 

Eg/b is dafinad as tha anargy at which sacond braakdown occurs undar spacifiad rsvarsa bias conditions. E s/b - 1/2 LI 2 , whara L is a sarlas 

load or laakags inductanca and I Is tha collactor currant 
•la. -la- 



i 3 

1 

z 2 

| 

I , 

| 

< 

1 o 

1 

§ 

-2 



BIAS RESISTANCE (Rbe> — 1 

92CS-I2445RI 

Fig. 7— Typical change in £5/*, as a function 
of base-to-emitter resistance. 



COLLECTOR-TO-EMITTER VOLTAGE (Vc El" 3 V 














< 10- 










































































































































































« '■°J 






fy. 








/ 
























J 






































































<?£ 
























I ; 

d o.i 8 - 

0.01 




■1 

S- 








I 
























f 












































*-J 








/ 


















%A 




/ 




/ 


















3 4 




/ 




/ 


















J 








' 


















v 


0.4 0.6 OS 1.0 1. 
BASE-TO-EMITTER VOLTAGE (Vbe>- 


2 




4 


i.c 



Fig. 8— Typical transfer characteristics. 



cot 


4.EC 


roR- 


TC- 


EMIT 


TER 


VOL 


rAGE 


(V C 


hv ; 












~: 








:::: 






















^:i 


































ili£ 


■ 




















f" 


:::. 






- 


T 

1 

3 io 
g 




]- 














A 




H** 






::•: 


:::: 














^ 














"■ 














s? 




:::: 




.-::; 




:i3 


•3 


::■ 


:•:! 












P-' z 




•:■• 


-.'■■ 








_.. 




■::;: 


Ji 


w 






::■! 


... 






':'::: 




I 


S 


H 






i-t 


p 


--.I 




Tfl 


jT: 


— 


!!!! 


\± 


Nil:?!? 













H 
















f-trr 











4 


A 


< 







i 







2 


I 


4 


i.< 



BASE-TO-EMITTER VOLTAGE (VBEl— V 



Fig.9— Typical transfer characteristics. 




COLLECTOR CURRENT (Ic> — A 

Fig. 10— Typical dc beta characteristics 
(median values). 



COLLECTOR SUPPLY VOLTAGE (Vc c |.SOV 
IC'B.SI B| -l2.SI ei 
















I.4 
I.2 


s_ 
























\ 


























S s 






























































































I 0.4 
02 
V 






























































































" — 4 




*■*» 




















(««,. 












































V 
















































K 




2 



COLLECTOR CURRENT (Ifi >— A 

92CS-I2429M 

Fig. 1 1 — Typical saturated-switching charac- 
teristics. 



I0 ,h PERCENTILE. Rbe'20 OHM 


s 














22 
20 

<■ IB 
I I* 

° 12 

i » 
1 8 

* 6 
< 
£ 4 

2 




^JoV- 














-2 








































rsc* 


>, 




























^ 


*, 






























p 






























J* 


<v 




























f- 






























h 


































■ 


























I V 






























< 












1 


3 




* 








8 


oo 














69 
100 



INDUCTANCE — pM 



92CS-I2446RI 



Fig. 12— Collector current as a function of 
inductance (50th percentile). 



83 



POWER TRANSISTORS. 



2N3439; 2N3440; 2N4063; 2N4064; 40385; 
40346, V1, V2; 40390; 40412, V1, V2 

High-Voltage Silicon N-P-N Transistors 

For High-Speed Switching and Linear-Amplifier Applications 



These RCA types are epitaxial-base silicon 
n-p-n transistors with high breakdown 
voltages, high-frequency response, and fast 
switching speeds. These transistors are 
intended for industrial, commercial, and 
military equipment. Typical applications 
include high-voltage differential and oper- 
ational amplifiers, high-voltage inverters, 
and high-voltage, low-current switching 
and series regulators. 

Types 40346, 40346V 1, and 40346V2 are 
especially useful in such devices as neon 



indicator and NIXIE* driver circuits and 
in differential and operational amplifiers. 
Types 404 12, 4041 2V1, and 40412V2 are 
especially suited for class-A ac/dc audio- 
amplifier service. 

These transistors are supplied in JEDEC 
TO-39 hermetic packages or in the TO-39 
package with factory-attached mounting 
flange or heat radiator. 

• Nixie is a Registered Trademark of Bur- 
roughs Corporation, Electronic Components 
Division, Plaint ield, N.J. 



Features: 

■ High voltage ratings: 

v CBO = 450 v max - (2IM3439, 
2N4063) 
= 300 V max. (2N3440, 
2N4064) 
V CE0 (sus) = 350 V max. (2N3439, 
2N4063) 
= 250 V max. (2N3440, 
2N4064) 

■ Maximum-area-of-operation curves 

■ Low saturation voltages 

■ Planar construction for 
low noise and low leakage 

Additional Features for 40385: 

■ High reliability assured by five 
preconditioning steps 

■ Group A test data in data File 215 



MAXIMUM RATINGS, Absolute-Maximum Values: 

"COLLECTOR-TO-BASE VOLTAGE V CB0 

COLLECTOR-TO EMITTER VOLTAGE: 
With external base-to-emitter resistance 

(R BE ) = 1.000ft V CER (sus) 

= 10,000f2 V CER (sus) 

* With base open Vq E q(sus) 

•EMITTER-TO-BASE VOLTAGE V EB0 

'CONTINUOUS COLLECTOR CURRENT ... I c 

"CONTINUOUS BASE CURRENT I B 

TRANSISTOR DISSIPATION: P T 

At case temperature up to 25°C 

At free-air temperatures up to 25"C 

At free-air temperatures up to 50°C .... 

At free-air temperatures above 25°C or 50°C 
"TEMPERATURE RANGE: 

Storage & Operating (Junction) 

'LEAD TEMPERATURE (During soldering): 

At distances > 1/32 in (0.79 mm) 

from seating plane for 10 s max 

*2N-Series types in accordance with JEDEC registration data 
NOTE: P T value of 10W at T c - 25°C and lead temperature of 255°C 



2N3439 


2N3440 


40346 


40412 


2N4063 


2N4064 


40346 V 1 


40412V1 


40385 


40390 


40346V2 


4041 2V2 


450 


300 


- 


- 



TERMINAL DESIGNATIONS 



(40385) 
(2N3439) 



0.5 



0.5 



10I2N3440) 10(40346) 

10I2N4064) 10I40346V2) 

3.5(40390) 4I40346V1) 

K2N3440) 1(403461 

— Derate linearly to 200°C 



-65 to 200 



i data for 2N4063 and 2N4064 only 



0.5 A 

10(40412) W 

10I40412V2) W 

4I40412V1) W 

1(40412) W 




92CS-27512 



JEDEC TO-39 

2N3439.2N3440.4034E 

40385.4041 2 




JEDEC TO-39 with Flange 

2N4063.2N4O64.40346V2, 

4041 2V2 



HEAT 
c RADIATOR 




ItMOUNTING 
TABS 




COLLECTOR CURRENT Uc^-mA 

92L3-I9M 

Fig. 1 — Typical dc-beta characteristics for 
2N3439, 2N3440, 2N4063, 
2N4064 and 40390. 



COLLECTOR-TO-EMITTER VOLTS IV^l-lut, 














S l«0 

9 

J » 
o; 
£ ioo 

it "o 

1 60 

s 40 

2 20 

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L 




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COLLECTOR CURRENT tl c l — WLLI»MPERES 

92CS-IZ6 

Fig. 2 — Typical dc-beta characteristics for 
40346, 40346V1. 40346V2, 
40412, 4041 2V1 and 4041 2V2. 






























CASE TEMPERATURE (T C )-25*C 
















£so 

I 
= 25 

1 20 

I 15 

I.o 

Z 5 






























































































- 






































\ 














































































































\ 




































\ 




































\ 




































\ 




































\ 




































\ 




































1 














































1 














t • 
























• 





COLLECTOR CURRENT (I,) — mA 

C 92LS-I591 

Fig.3— Typical gain-bandwidth product for 
all types. 



84 



POWER TRANSISTORS 



2N3439; 2N3440; 2N4063; 2N4064; 40385; 
40346, VI, V2; 40390; 40412, VI, V2 

ELECTRICAL CHARACTERISTICS, Case Temperature (T c ) = 25° C, Unless Otherwise Specified 



CHARACTERISTICS 


SYMBOL 






CURRENT 
mA dc 


LIMITS 


UNITS 


VOLTAGE 
V dc 


2N3439 
2N4063 
40385 


2N3440 
2N4064 
40390 


40346 
40346 V 1 
40346V2 


40412 
4041 2V1 
4041 2 V2 


V C E 


v B e 


'c 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


Collector-Cutoff Current: 
With base open 


'CEO 


100 
200 
300 


- 




- 


20 


- 


50 


- 


5 


- 


5 


MA 


With base reverse- 
biased: 


! CEV 


200 
300 
450 


- 1.5 

- 1.5 

- 1.5 




- 


500 


- 


500 


- 


10 


- 


- 


AtT c = 150°C 


150 
200 


- 1.5 

- 1.5 














1 




2 


mA 


With R = 10,000 ohms 


'CER 


100 






- 


- 


- 


- 


- 


— 


— 


1 


mA 


Collector-Cutoff Current 


'CBO 


250 
360 






- 


20C 


— 


20C 


— 


— 


— 


— 


juA 


Emitter-Cutoff Current 


'ebo 




-3 
-4 
-6 




- 


20 


- 


20 


- 


5 


- 


100 


MA 


DC Forward-Current 
Transfer Ratio 


h FE 


10 
10 
10 
20 




2 

10 
20 
30 


30 
40 


160 


40 


160 


25 


- 


40 


- 




Collector-to-Emitter 
Sustaining Voltage: 
With base open 


V CE0 (sus) 






50 


350 a 


- 


250 a 


- 


- 


- 


- 


- 


V 


Collector-to-Emitter 
Sustaining Voltage: 
With external base-to- 
emitter resistance 
R BE = 1,000 ohms 
R BE = 10,000 ohms 


V CER(sus) 
V CER(sus) 






50 
50 


- 


- 


- 


- 


175 a 


- 


250 a 


- 


Base-to-Emitter Voltage 


V BE 


10 




10 


- 


- 


- 


- 


- 


1 


- 


- 


V 


Base-to-Emitter 

Saturation Voltage 
lg = 4 mA 


V BE (sat) 






50 


- 


1.3 


- 


1.3 


- 


- 


- 


- 


V 


Collector-to-Emitter 
Saturation Voltage 
l B = 1 mA 
lg = 4 mA 


V CE (sat) 






10 
50 


- 


0.5 


- 


0.5 


- 


0.5 


- 


0.5 


V 


Small-Signal Forward- 
Current Transfer Ratio: 
f=5MHz 


h fe 


10 




10 


3 


- 


3 


- 


2 


- 


2 


- 




Output Capacitance: 
V CB = 10 V, f = 1 MHz 


c ob 








- 


10 


- 


10 


- 


10 


- 


10 


pF 


Second-Breakdown Current 
t p = 0.4 s 


'S/b 


200 






- 


50b 


- 


50b 


- 


- 


50 


— 


mA 


Thermal Resistance: 
Junction-to-case 


R 0JC 








- 


17.5 


- 


17.5 


15 max. 

(40346) 

(40346V2) 


15 max. 
(40412) 
(4041 2V2) 


°c/w 


Junction-to-free air 


R#JFA 








- 


- 


- 


- 


45 max. 
(40346V 1) 


45 max. 
(40412V1) 



aCAUTION: The sustaining voltages, V CEO ' sus > and V CER* SUS '' must not 
C 2N3439 and 2N3440 only. *2N-Series types in accordance with JE 



be measured on a curve tracer. ' 1 2N-Series types. 

DEC registration data. gc 



POWER TRANSISTORS 



2N3439; 2N3440; 2N4063; 2N4064^ 40385; 
40346, V1, V2; 40390; 40412, V1,V2 




I0 I00 

COLLECTOR-TO-EMITTER VOLTAGE <V C E>— V 

Fig.4-Maximum operating areas for 2N3439,2N3440,2N4063 and 2N4064. 



I000 

92LM-I596RI 



COLLEC 
2.0 

IS 

16 

1.4 

l '* 
~ 1.0 

1 °' e 

M 0.6 

0.4 


TOR-TO-EMITTER VOLTAC 


€ ( 


VCE 


• l( 


V 
















ffflff^pH 














'I'tyF* f 'p'^pjtr'' 




























3? 






































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w 












4 


T 


I 

trrr 


m 


k 




S8i: 


0.2 




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JHJ 


1 








"T 1 














'fit 












I 


m 


m 




ifPt-'-'.'LuLfffp? i,! 



COLLECTOR-TO-EMITTER VOLTS (Vc£> ■ 10 












(0*« 


























£ 2 








































•y 






















* 


























































j" 2 . 












.<& 






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hrfi 






































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4", 
























d^ 


























































































1.0 



















































BASE-TO-EMITTER 



< V BE>— v MLM-H 



Fig. 8 — Typical input characteristics for 
2N3439, 2N3440, 2N4063, 
2N4064 and 40390. 



BASE-TO-EMITTER VOLTS (VBE) 92CS 

Fig. 9 — Typical input characteristics for 
40346, 40346V1, 40346V2, 
40412. 4041 2V1 and 4041 2V2. 




0.2 0.4 0.6 as 

BASE- TO- EMITTER VOLTAGE (V BE I — V mls-1597 

Fig. 5 — Typical transfer characteristics for 
2N3439. 2N3440, 2N4063, 
2N4064 and 40390. 



COLLECTOR-TO-EMITTER VOLTS <V CE ) ■ tO 










X 2 

3 l0 « 

3 4 

k i-O a 

001 












*> 


t's* 










































^Si 






















i y ^ 
















— 


— 




ifi 

























<ff 

























































m 






















iff 


















































































































1 



BASE-TO-EMITTER VOLTS tVBE> 



Fig. 6 - Typical transfer characteristics for 
40346, 40346V 1, 40346V2, 
40412, 40412V1 and 40412V2. 



CASE TE 


MPER 


TUR 


E IT C ) ■ 


»• 
































" eo il 










06 




in 


Tfl* 








* m 










0.7 










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lr 




ft* 


If 




0.6 


tttTttt 
JJo.S§ 




















mm 


iinfmf f 








1 












WM\ 


SB 


8 20 l 




1* 


'[•- 


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flit 




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HI 


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TtS 


Tritt 


Ihliiiitj 


fr+H 


tat* 


























fflf 


!,j ! titt«tmtta«{;t:;BtttB«i1 



F/0. 7 — Typical output characteristics for 
2N3439. 2N3440, 2N4063, 
2N4064 and 40390. 



ITS 

00 
1 

1,2, 

£oo 

3 75 
S 
S 50 




-yj- 




h CASE TEMPERATURE (T( 


)-28*C - 


























































































































o.a : : 












fflrf 


5 
















1 




25 













































F/gr. 10 — Typical output characteristics for 
40346, 40346V 1, 40346V 2, 
40412, 40412V1 and 4041 2V2. 



86 



POWER TRANSISTORS 



2N3441, 2N6263, 2N6264, 40373, 40912, 40913 

Hometaxiai-Base, Medium-Power Silicon N-P-N Transistors 



Rugged Devices for Intermediate, Power Applications 
in Industrial and Commercial Equipment 



RCA 2N3441, 2N6263, and 2N6264 are 
hometaxial-base silicon n-p-n transistors in- 
tended for a wide variety of medium to-high 
power, high-voltage applications. These types 
are supplied in the JEDEC TO-66 hermetic 
package. 



Types 40373, 40912, and 40913 are the 
2N3441 , 2N6263, and 2N6264 with factory- 
attached heat-radiators intended for printed- 
circuit-board applications. 



MAXIMUM RATINGS, Abtolun-Mtgimum Vilun: 

•COLLECTOR-TO-BASE VOLTAGE V r »n 

COLLECTOR-TO-EMITTER CBO 
SUSTAINING VOLTAGE: 

* With b«. open V CE0 (lu.l 

With extarnal baaa-to-emltter raalitanca (R BE I - 100O V C e B («ut) 

With ban ravana-blatad (V BE - -1.6 V) Vreulaual 

•EMITTER-TO-BASE VOLTAGE v „n 

•CONTINUOUS COLLECTOR CURRENT I ° 

PEAK COLLECTOR CURRENT 

•CONTINUOUS BASE CURRENT I 

TRANSISTOR DISSIPATION: p" 

* At casa temparatura up to 25°C 

At ambiant temperaturai up to 2S°C 

* At temparatures abova 25°C 

•TEMPERATURE RANGE: 

Storaga & Operating (Junction) 

•PIN TEMPERATURE (During Soldaringl: 

At distances^ 1 /32 in. 10.8 mm) from Mating plana for 10 s max 

•in accordance with JEOEC registration data format JS-S ROF-2 



2N6263 


2N3441 


2N6264 


40912 


40373 


40*13 


140 


160 


170 


120 


140 


150 


130 


150 


160 


140 


160 


170 



(2N6263) 

6.8 
140912) 


I2N3441) I2N6264) 
6.8 6.8 w 

140373) 140913) 
Derate linearly to 200°C 


236 °C 



Features: 

■ 2N6264: premium type from 2N3441 family 

■ Maximum «afe-ar«a-of-operatlon curvet for dc and 
pulw operation 

■ High voltage ratingt 

■ Low Mturation voltagei 

■ Thermal-cycling rating curvet 
Applications: 

■ Serlet and thunt reguiatort 

■ High-fidelity amplifier! 

■ Power twitching circuit! 

■ Solenoid driven 

TERMINAL DESIGNATIONS 




JEDEC TO-66 
2N3441 ,2N6263.2N6264 




(HEAT RADIATOR) 



JEDEC TO-66 with Haat Radiator 
40373,40912,40613 




6 8 | 2 4~ 6 8 | 00 ' 2 

COLLECTOR-TO-EMITTER VOLTAGE (V CE ) — V 
Fig. 1 -Maximum operating areas for 2N3441 and 2N6263. 




Fig.2-Thermal-cycle rating chart for 2N6264. 



1 

* 

J. 10- 

!' 

1- 

V 




1 

-Tj MAX -IOC 


1 

•c 












V* 








L 


V V** 


^< 


\. 






1 


HI 


p. 






4 > 


\ 

1 


4 • 







NUMKR Of TMCKH4L CTCLtl 

atci-mor 

Fig.3-Thermal-cycle rating chart for 2N3441. 



87 



POWER TRANSISTORS 



2N3441, 2N6263, 2N6264, 40373, 40912, 40913 

ELECTRICAL CHARACTERISTICS, At Case Temperature (T c ) = 25°C, Unless Otherwise Specified 







TEST CONDITIONS 


LIMITS 












2N6263 


2N3441 


2N6264 


CHARACTERISTIC 


SYMBOL 


VOLTAGE 
V dc 


CURRENT 
A dc 


40912 


40373 


40913 


UNITS 


V CE 


V BE 


'c 


'b 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


Collector-Cutoff Current: 




100 











5 












With base open 


'CEO 


130 
140 










" 




— - 


100 





1 


mA 


Collector Cutoff Current: 
























120 


1.5 








2" 














'CEX 


140 
140 


- 1.5 
1.5 












5' 
1 








With base-emitter 
junction reversed 
biased 




150 


1.5 
















0.05' 


mA 




120 


1.5 








10' 














'CEX 
(T c 150°C) 


140 
140 


1.5 
1.5 












6* 
5 












150 


1.5 





— 




2 









1 • 


mA 


Emitter-Cutoff Current 


'ebo 




-5 









-7 











,- - 


1 




0.2 




Collector-to-Emitter 








Sustaining Voltage: 3 
With base open 


V CEO lsus) 







1 b 





120 




140 




150 






With external base to 




















emitter resistance 


V CER (sus) 






0.1 




130 




150 




160 




V 


IR BE I = 100S2 





























With base-emitter 


















junction reversed 


v CEv' sus ' 




15 


0.1 




140 




160 




170 






biased 































2 


lb 












20 


60 




DC Forward-Current 


h FE 


2 




3b 




3 








5 






Transfer Ratio 




4 
4 




5 b 
27 b 




20 


100 


25 


100 
















0.5° 


0.05 




1.2* 




1 








Collector-to-Emitter 


V CE (sat) 






1b 


0.1 












0.5" 


V 


Saturating Voltage 








2.7 b 


0.9 








6' 












2 




1 b 








- 






1.5' 




Base-to-E miner Voltage 


V BE 


4 
4 




0.5 b 
2.7b 






2* 




1.7 
6* 






V 


Magnitude of Common- 


























Emitter, Small-Signal, 


























Short-Circuit Forward 


h e l 
























Current Transfer Ratio 




4 




0.5 




5 




5 




b 






(f = 0.4 MHz) 


























Gain-Bandwidth Product 


♦r 


4 




0.2 




200 




200 


- 


200 


- 


kHz 


Common-Emitter, Small - 


























Signal, Short -Circuit 


h fe 


4 




0.1 




25 


- 


- 


-- 


25 


- 




Forward Current Transfer 




4 




0.5 




- 




15 


75 


- 






Ratio If = 1 kHz) 


























Forward-Bias Second 


























Breakdown Collector 




120 








0.167 


- 


- 


- 


- 


- 




Current, Pulse Duration 


's/b 


120 








- 


- 


- 


- 


0.417 


- 


A 


(non-repetitive) - 1 s 




120 








- 


- 


0.21 


- 


- 


- 




Thermal Resistance: 


























Junction-to-Cau 


R 0JC 










8.75 (max.) 
2N6263 


7 (max.) 
2N3441 


3.5 (max.) 
2N6264 


°C/W 


Junctiorvto-Ambient 


R 0JA 










30 (max.) 


30 (max.) 


30 (max.) 














40912 


40373 


40913 





•In accordance with JEDEC registration data format (JS-6 ROF-2). 

'CAUTION: The sustaining voltage V CEO (sus), V CER (sus), and V CEV (sus) MUST NOT be measured on a curve tracer. 

Pulsed, pulse duration - 300 «»: duty factor < 2 %. 



88 



POWER TRANSISTORS 



2N3441, 2N6263, 2N6264, 40373, 40912, 40913 



CASE TEMPERATURE (T c ) =25°C 
(CURVES MUST BE DERATED LINEARLY 
WITH INCREASE IN TEMPERATURE) 




COLLECTOR-TO-EMITTER VOLTAGE (V CE ) — V 
Fig. 4 — Maximum operating areas for 2N6264. 



6 8 I000 

92CS-I947I 



COLLECTOR-TO-EMITTER VOLTAGE (V c 


).4V [ 


T, 










O 120 

K OOi 
2 

5 so 

£ 60 
T 4 <> 

I" 

8 o 


>' 


f 


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r 












[ 




t< 


| 














« 


-2 






-, 


* 










T 



COLLECTOR CURRENT dc) — A 



Fig. 7— Typical dc-beta characteristics 
2N3441 and 40373. 



~L, I40 

2 120 

< 

5 100 
Ik 

I - 

1 «0 

g 40 
i 

§ 20 

* 


COLLECTOR-TO-EMITTER VOLTAGE (V CE IMV 






































' 






\ 


», 




























\ 






























N 




V* 


i£ T 

c>- 


UK 

2»'C 


tATUR 






















^ 
























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V 


























123 •< 




: 5s 








PC 


w 


4 


• 


u 








D". 




* 








1 

10 



for 



COLLECTOR CURRENT ( Ir) - A 

*" MCS-I9SI6 

Fig. 8— Typical dc-beta characteristics for 
2N6263 and 40912. 



z 


>^ 


MM ! 

,.TjMAX.200*C 

i 








I 




X< 












£■ • 




\ 1<s 










- 


a 6 

t 






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x<- 








- 






















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fs£ 






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r V 


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- 



NUMBER OF THERMAL CYCLES 



Fig. 5— Thermal-cycle rating chart for 
2N6263. 




*O0 * ' ««IK > - "I0K < " «IOOK 
EXTERNAL BASE-TO-EMITTER RESISTANCE (R B £l — 

Fig. 6— Sustaining voltage vs. base-to- 
emitter resistance for all types. 



ICO 

1 140 

e 

| 120 

*" 100 

£-80 

? 

| GO 

s 

° 40 

s 

20 


COLLECTOR-TO-CMITTER VOLTAGE (Vc E l-4\ 


















































T' 










> 








































\ 
\ 








































> 


\ 








































> 




iCASE TEMPERATURE 
\(T C I • 25"C 


























* 


\ 






































lis-? 

i 


"^ 











10-3 * 4 ' To-2 * * ' V 

COLLECTOR CURRENT <I C I —A 

Fig. 9- Typical dc-beta characteristics for 
2N6264 and 4091 3. 




Fig. 10— Typical transfer characteristics for 
2N3441 and 40373. 




O.S I 1. 9 t 2.5 

BASE -TO- EMITTER VOLTAGE ( 



Fig. 1 1 — Typical transfer characteristics for 
2N6263 and 40912. 




Fig. 12— Typical transfer characteristics for 
2N6264 and 40913. 



89 



POWER TRANSISTORS 



2N3441, 2N6263, 2N6264, 40373, 40912, 40913 



COLLECTOR-TO-EMITTER V0LTA81 (V ct ).<V 
CASE TEMPERATURE (T C )-!9*C 












l.t 

1 
X 

i '" 

* 0.6 
1 0.4 

i 0.2 

5 




-- 










_. 












- 




- 


If- 
















































- 






If- 










._ 




■ 














t a 










t • 


2 








6 e 



COLLECTOR CURRENT dc>- 



Fig. 13— Typical gain-bandwidth product 
for all types. 



COLLECTOR 

'■" too-- 


TO- 


EMI 


TTE 


R Vt 


LT» 

i 


6E 

4 

r 


"CE 














...: 








L_. 


■«4r 










1 


E 

| ISO 

2 

X I00 
u> SO 




















_. 




^ 


































- 




i 


I 











































BASE-TO-EMITTER VOLTAGE (V BE )-V , !cs .| 26< . 

F/'p. 14— Typical input characteristics for 
2N3441 and 40373. 



CASE TEMPERATURE IV)*2S*C 










1.5 










*n ff t imTrnTT 








K 1.0 














































5 0.5 










MMffilR , SffiW11[[llTff ; 






n 1 1 1 1 1 M 1 1 1 1 1 1 1 1 1 





COLLECTOR-TO-EMITTER VOLTAGE IV CE I — V 

Fig. 15— Typical output characteristics for 
2N3441 and 40373. 




BASE-TO-EMITTER VOLTAGE (Vbe> — V 



Fig. 16— Reverse-bias second-breakdown 
characteristics for all types. 




BASE -TO - EMITTER VOLTASE (V M ) -V 



Fig. 1 7— Typical input characteristics for 
2N6263and40912. 




COLLECTOR-TO-EMITTER VOLTABE (Vofl-V 

•2Cf-ltSIS 

Fig. 18— Typical output characteristics 
for 2N6263 and 40912. 






CASE TEMPERATURE <T C ) 


• ts*c[-H-| 1 1 1 1 1 










1.5 ■ 

< ! 




















'tj|| - 
























































- + 












z ' 

H : 






-± 


















































• -; + " 
















$ - 

h > 


- -f ± -. ■ J 


:i: 


:i 












j 0.5 - 






















































* r 














Dl ' ' 


RENT (I 


,1-0. 


InA 












\>Mu mmmmmitittm 











Fig. 19— Typical input characteristics for 
2N6264and40913. 



COLLECTOR - TO - EMITTER VOLTAOE (V CE >— V 

Fig. 20— Typical output characteristics for 
2N6264 and 40913. 



90 



POWER TRANSISTORS 



2N3442, 2N4347, 2N6262 

Hometaxial-Base High-Voltage Silicon N-P-N Transistors 

Rugged High-Power Devices for Applications in Features: 

Industrial and Commercial Equipment ■ low nturation voltages 

■ Thermal-cycle rating chain 
RCA 2N3442, 2N4347, and 2N6262 are hometaxial-base, These device* employ the popular JEDEC TO-3 package; they " "'* diwi P ation capability - 100 W (2N4347) 

silicon n-p-n transistors intended for a wide variety of differ in maximum ratings for voltage, current, and power. - 117WI2N3442) 

high-power, high-voltage applications. Typical applications ' _ 150 W (2N6262) 

for these transistors include power-switching circuits, audio . Maximum are*of-operation curves 

amplifiers, series- and shunt-regulator driver and output for dc and pulse operation, 

stages, dc-to-dc converters, inverters, and solenoid (hammer)/ . ,. 

relay driver service. Applications: 

■ Series and shunt regulators 

MAXIMUM RATINGS, Abalut^M. x imum Values: 2N4347 2N3442 ^.g, ■ High-fidelity amplifiers 

■ Power-switching circuits 
•COLLECTOR-TO-BASE VOLTAGE w_„ 140 , m „„ „ 

.°r£^^-.™. WLTA - ' v Z Z TERMINAL OESIG.ATIO.S- 

w hh r^ bte( v BE ,of-,. 6 v:::::::::::::::::::::::::::::::::;:;: ^° ;» l£ 170 * 

•EMITTER-TO-BASE VOLTAGE .... v 7 , £ \ (FLANGE) 

•COLLECTOR CURRENT: , EBO ' V 

Continuous ■ C 

•basecurrent! , 10 * 16 15 A (Q Q^ 

Continuous B _ V fo-& 

peak ;;;;; t. 7 _ 7 A 

•TRANSISTOR DISSIPATION: p A 

Atc-.t«np.r«ur.upto2S C T 100 ,, 7 ,-. 

At case temperatures above 26°C „ W 

•TEMPERATURE RANGE: Derate linearly to 200 C JEDEC TO-3 

Storage ft Operating (Junction) „ - 

•PIN TEMPERATURE (During Soldering) : *" ^ 

At di«ancas^1/32 in. (0.8 mm) from case for 10 s max • 236 236 236 °C 

•in accordance with JEDEC registration data format (JS-S, RDF-2). 




CASE TEf^PEflATUREC^J.as^ fawytfc 
I AERATED LINEARLY WITH WCRBASE 




10 "100 200 

COLLECTOR -TO -EMITTER VOLTAGE (V^) — V 

Fig. 1— Maximum operating areas for 2N3442. 



f. 170 

i 

II' 60 

SJiso 


CASE TEMPERATURE (Tc)»2S'C 














1 ! 














«CER 


























1 1 
VCER 












"ftp. 


? 




VCEO 












- 




*- 


ftl 


T\ 






VCEO 


3 

130 
G 120 

8 no 


\ 


CEr 








































™s 


^ 


1l 


fl 






vccc 






































* 






• 












6 






«• 



Fig. 2— Sustaining voltage vs. base-to-emitter 
resistance for all types. 



* « 

1 

1 * 

| 

a 

i ■ 
10 


^TjMAX.-20C»C 






















1 \ 


n^ 












\ 




N 


Sfc. 










\ 








k 





4 • ' »» « * • * ,0* * 

NUMBER OF THERMAL CYCLES »zcs-IOTI« 

Fig.3— Thermal-cycle rating chart for 
2N3442. 



91 



POWER TRANSISTORS . 



2N3442, 2N4347, 2N6262 

ELECTRICAL CHARACTERISTICS. At Case Temperature (T c ) = 25°C unless otherwise specified 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 




VOLTAGE 
V dc 


CURRENT 
A dc 


2N4347 


2N3442 


2N6262 


UNITS 


V CE 


V BE 


•c 


>B 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


Collector Cutoff Current: 
With emitter open 
<V CB =140V) 


'CBO 










- 


- 


- 


1* 


- 


1 


mA 


With base-emitter junction 
reverse-biased 


'CEX 


120 
140 
140 
150 


-1.5 
-1.5 
-1.5 
-1.5 






- 


2 


- 


5 
1 


- 


0.1 


mA 


With base-emitter junction 
reverse-biased and 
T c = 150°C 


'CEX 


125 
140 
140 
150 


-1.5 
-1.5 
-1.5 
-1.5 






- 


10 


- 


30 
10 


- 


2 


mA 


With base open 


'CEO 


1CXJ 
110 
140 










200 




200 




1 


mA 
mA 


Emitter Cutoff Current 


'ebo 




-7 







- 


5 


- 


5 


- 


0.2 


* DC Forward Current 
Transfer Ratio 


h FE 


2 
2 
4 
4 
4 
4 




3 a 

10 a 

2 a 

3 a 
5 a 
10 a 




15 
10 


60 


20 
7.5 


70 


20 
5 


70 




Col lector-to-E miner 
Sustaining Voltage: 
With base-emitter 
junction reverse- 
biased 


V CEV (sus) 




-1.5 
-1.5 


0.1 
0.2 




140 


- 


160 


- 


170 


- 


V 


With external base-to-emitter 
resistance (Rb E > " 1 00i2 


V CER lsus) 






0.1 
0.2 




130 


_ 


150 


- 


160 


- 


V 


* With base open 


V CE0 (susl 






0.2 a 
0.2 a 






120 


: 


140 


: 


150 


_ 


V 


* Base-to-E miner Voltage 


V BE 


2 
4 
4 
4 
4 




3 a 

3 a 
2 a 

5 a 
10 a 




- 


2 
3 


17 


5.7 


- 


1 


V 


* Collector-to-Emitter 
Saturation Voltage 


V CE (sat) 






2 a 
3 a 
5 a 
10 a 


0.2 
0.3 
0.63 
2 


- 


1 
2 


- 


1 
5 


- 


0.5 


V 


Power Rating Test 


PRT 


67 
78 
100 




1.5 
1.5 
1.5 




1 


- 


1 


- 


1 


- 


s 


* Magnitude of Common- 
Emitter, Small-Signal, 
Short-Circuit, Forward 
Current Transfer Ratio: 
f = 50 kHz 


Ihf.l 


4 




0.5 




4 














f = 40 kHz 


he\ 


4 

4 




1 
2 




- 


- 


2 


- 


2 


- 




* Common-Emitter, Small- 
Signal, Short-Circuit, 
Forward Current Trans- 
fer Ratio If = 1 kHz) 


"fe 


4 
4 
4 




0.5 

1 

2 




40 


- 


12 


72 


10 


- 




Thermal Resistance: 
Junction-to-Case 


R 0JC 










- 


1.75 


- 


1.5 


- 


1.17 


°C/W 



•In accordance with JEOEC registration data format JS-6 ROF-2 
'Pulse test; pulse duration - 300 Ms, rep. rate ■ 60 Hz 



92 



POWER TRANSISTORS 



2N3442, 2N4347, 2N6262 




K> 100 200 

COLLECTOR- TO- EMITTER VOLTAM (V^)— V 

Fig. 4 — Maximum operating areas for 2N4347. 




COLLECTOR-TO-EMITTER VOLTAGE (V C e'— V 



Fig. 5 — Maximum operating areas for 2N6262. 



93 



POWER TRANSISTORS 



2N3442, 2N4347, 2N6262 




COLLECTOR CURRENT (I c 



Fig. 6 — Typical dc beta characteristics 
for 2N3442. 



c 

9 

T 

M* 4 

I 3 

1 

i 








EMITTER 




rafrffawfc 


¥ :: 


/ 








W&& 
















h 








ISp 












~! 


.-:;; 






i 






— 














































^f;^n;-it:t 


jig 






















































H 









0.2 0.4 0.6 0.8 1.0 1.2 L4 1.6 

SASE-TO-EM'TTER VOLTAGE (V^l— V 

Fig. 7 — Typical transfer characteristics for 
2N3442 and 2N4347. 



CASE TEMPERATURE <T C ) ■ 23'C t | | | | | | | | | | | | | 1 1 ff 






1 
Ti l0 










1.2: 
:o f q 








s 5 








IfT 






' ZA " 









Z.0 i3 3.0 3.5 4.0 
COLLECTOR-TO-EMITTER VOLTASE (V^— V 



Fig.8- Typical small-signal output characteristics 
for 2N3442. 



3.3 
3.0 


























J CASE TEMPERATURE (T c ) ■ 2S'C 






























*o± 












1 
J >o 






£ffi 


yP 


2S& 


JOB* 










]J| [ J! J | [ |jj 


S: 


0.3 























20 40 60 SO K» 120 140 

COLLECTOR-TO-EMITTER VOLTAGE (V a >— V 

9ZSS-3249 

F/gr. 3 —Typical large-signal output characteristics 
for 2N3442. 



COLLEC 

05 

0.4 
T 

~ 0.3 
" 02 

i 

0.1 


TOR- 


TO- 


EMIT 


TER 


V0L1 


AGE 


IVCE 


■4V 






«f 


=1 










:•: 




ilHmSJ 






fW 








H 
























SS^ 














































~*Z# 
















mm 









0.6 0.8 

8ASE-T0-EMITTER VOLTAGE (Vg E ) — V 

Fig. 10 —Typical input characteristics for 
2N3442. 



I00 


1 1 
















'S^Tj MAX..20CC 














* 

I 
i 

I 

5 

V 

10 




Nsl, 














\ 




s^ 










& V 


V 


' \ 




\ 


^i^r 


^ 







NUMBER OF THERMAL CYCLES 



Fig. 11 — Thermal-cycle rating chart for 2N4347. 



£ 70 
£ 60 

I M 

| 30 

i- 

8 




COLLECTOR-TO-EMITTER VOLTAGE (V CE ) = 4 V 




















j 






I j 


y 


*** 






V 










: j 














^ 


\ 


^ 


w 




















^ 






% 


A 


i 
















S 


, 






























\* 






























s/^ 


o 


































- 



































Fig. 



COLLECTOR CURRENT (I c l— A 

12 — Typical dc beta characteristics for 
2N4347. 































i" 
§ 

i 






HI 11 llll]]] 111 || 11 11 1111 lllllnl'fi 




1 |I| LJT| | 1 | | [ | I | 1 | | | 1 I | 1 | | | || ||Tnf 




111 1 1 Lftll 1 1 1 1 1| 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Ho? 
LfnTI 1 1 1 1 1 1 1 1 1 1 base cuwffi (M'oaii 

yfntTtl 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1] 1 1 | ai 

















0.3 ID 13 20 2.3 3.0 S3 4.0 43 

COLLECTOR-TO-EMITTER VOLTAGE (V^—V 

92S9-3249 

Fig. 13 —Typical small-signal output characteristics 
for 2N4347. 























CASE TEMPERATURE (T c )i25 - C 


















1 1 I 1 


I II in llll II ;,w^ 


















1" 
H 2.0 

i 

§ is 

|,o 
8 

0.3 


lilifflTTTBffi 


















fggf 












fflj-l*< 
















Ua> 










TtTT rglfFrti 















20 40 60 80 100 120 140 

COLLECTOR-TO-EMITTER VOLTAGE IV^— V 

92S9-K47 

Fig. 14 -Typical large-signal output characteristics 
for 2N4347. 



COLLEC 


ro 


fl- 


TO- 


Ml 


TER 


VOLTAGE 


<v c 


:>■« 


v H 








1.0 
O.S 

T 

£o,6 
|o.4 

a 

0.2 






1 




m 


1 


1 


1 






























































wW 
























F 














































W 


K v 


"■jflltlllllllfttttl 


















§§ 


SBffi 


?illlll!IIHIIIIIil 


















^| ffl „ll„„„„„„, mnrnn 


















1 

















































0.6 0.8 1.0 1.2 1.4 16 

BASE-TO-EMITTER VOLTASE <%£>— V 

929S-3227 

Fig. 15 — Typical input characteristics for 
2N4347. 



I50 


yTj MAX.' 200 °C 


















* l0 °- 
























I 
























a ° 




Xcjj 




















J 






X 


















p 








P\ 


s 






















frr 












s 


\ \ 










S^v 












15 


V 














^ 








M 


>. 




No, 













UMBER OF THERMAL CYCLES 



l0 ° 

£ 80 
£ 60 

i 

3 40 

1 2 ° 




COL LECTOR -TO- EMITTER VOLTAGE ( V CE ) '4 V 


























A 






x 








\^ 






















*£\a 




















v 


\ 




% 
























\V 
























X 



Fig. 16 -Thermal-cycle rating chart for 2N6262. 



COLLECTOR CURRENT U c » — A 

92CS-I9963 

Fig. 17 — Typical dc beta characteristics for 
2N6262. 



94. 



POWER TRANSISTORS 



2N3442, 2N4347, 2N6262 



« 

9 

< 
I 

5 * 

B 5 

a < 




COLLECTM-TO-CMTTtKgg 
VOLTAOE (Vfc t >.4V Hs 


1 llnfr/ff 


wmii 






1BI1 
















ff.7/ffi$ffllfl 








H»f 


ill 




HBffiB 


jfllfflllllllll ™M 


'mill 




j/|f]|| HIJIJ) 




flam 












ijjjl 






tjt|!i} 





a* 06 04 U> I* 

■ASE-TO-EMrTTER VOLTMC (V,.)— V 

KCS-IMM 

Fig. 18 — Typical transfer characteristics for 
2N6262. 



CASE TEMPERATURE <T C ) ■ 25*C ft ll ft 

34+4 4++4ffl+W4 RWffii+tt 


ft* 


s 




Iff 




|[ 1 












mt 








T 
s 
















































JfflffW-HiifflHT 8 *^ CURRENT (lB)*«AJ-ffff 

























05 10 1.5 2.0 8.5 5.0 5.5 4.0 Tj» 

COLLECTOR-TO-EMITTER VOLTAGE (V^l — V 

•KS-19590 

F/"$. 19 — Typical small-signal output 
characteristics for 2N6262. 




20 40 to W 100 120 140 

COLLECTOR-TO-EMITTER VOLTAOE IV™!— V 

MCS- 1(941 

Fig. 20 - Typical large-signal output characteristics 
for 2N6262. 




02 04 06 0.8 to 

•ASE-TO-EMITTER VOLTAOE (V, E ) V 

MCt-»t» 

Fig. 21 - Typical input characteristics for 
2N6262. 



« 


COLLECTOR CURRENT (I C )/6ASE CURRENT II, 


)-K> 


Pi 

V'' 












- Iff 


7 

5 •, 










































/ 


r>. 










,,-fA 


•" 




* : 










—&/■ — 




















&r / 


















<Y 1 










4 ' 

t 

01 










V ' 


















1 / 
















I 


t / 













91 








' 0, 








»" tH 

I.C 



COLLECTOR-TO-IMITTER SATURATION VOLTAU Sgj (mjl-y 

RIMIH 

Fig. 22 — Typical saturation-voltage characteristics 
for all types. 




•ASE-TO-EMITTER VOLTAOE IV^I — V 



Fig. 23 - Reverse-bias, second-breakdown 
characteristics for all types. 



.95 



POWER TRANSISTORS. 



2N3583-2N3585, 2N4240, 40374 

High Voltage Silicon N-P-N Transistor 

For High-Speed Switching, Linear-Amplifier Applications, and Off-Line 
Switching-Regulator Type Power-Supply Applications 



These RCA types are silicon n-p-n transis- 
tors with high breakdown voltages and 
fast switching speeds. 

Typical applications for these transistors 
include high-voltage operational amplifiers, 
high-voltage switches, switching regulators, 
converters, inverters, deflection- and hi-fi 
amplifiers. 



These transistors are also intended for a 
wide variety of applications in ac/dc com- 
mercial equipment. 

Types 2N3583, 2N3584, 2N3585, and 
2N4240 are supplied in hermetic JEDEC 
TO-66 packages. Type 40374 is a 2N3583 
with a factory-attached heat radiator. 



Features for JEDEC Types: 

■ 100-percent tested to assure freedom 
from second breakdown in both 
forward- and reverse-bias conditions 
when operated within specified limits 

■ Economy types for ac/dc circuits 

■ Fast turn-on time at high collector 
current 



TERMINAL DESIGNATIONS 



(FLANGE) 



MAXIMUM RATINGS, Absolute-Maximum Values: 2N3583 

'COLLECTORTO-BASE VOLTAGE V CB0 250 

' COLLECTOR-TO-EMITTER SUSTAINING 
VOLTAGE: 

With base open Vq^qIsus) 175 

'EMITTER-TO-BASE VOLTAGE . , V EB0 6 

'CONTINUOUS COLLECTOR CURRENT I c 1 

"PEAK COLLECTOR CURRENT I CM 5 

'CONTINUOUS BASE CURRENT I B 1 

'TRANSISTOR DISSIPATION P T 

At case temperature (Tq) = 25°C 35 

At ambient temperature (T^) = 25°C - 

At case temperatures above 25°C 

For other conditions 

•TEMPERATURE RANGE: 

Storage & Operating (Junction) 

"PIN TEMPERATURE: 

1/16 in. (1.58 mm) from seating plane for 10s max. 235 

*ln accordance with JEDEC registration data format J9*6 RDF-2 I2N3583I, JS-6 RDF-1 
I2N3584. 2N3585. 2N4240). 



N3584 


2N3585 
2N4240 


40374 


375 


500 


250 


250 
6 
2 


300 
6 
2 


175 
6 
2 



Derate linearly at 0.2 W/°C 
- Derate linearly to 200°C — 




JEOEC TO-66 2N3S83. 2N3S84, 
2N3S85, 2N4240, 4O8S0 




JEDEC TO-66 with Heat Radiator 
40374 



(HEAT RADIATOR) 





So 

> 25 

1 

i- H,20 

w 05 



CASE TEMPERATURE 


(T C WS'C 
St- 

«?/ ■;■■■■ 


... 

.... 
... 












1 1 : \if \ 




i 














.... 






_j. .;;/.. 


__i_.. 




— 



Fig. 1 — Typical dc beta vs. collector current 
for 2N3583, 2N4240 and 40374. 



Fig. 2— Typical dc beta vs. collector current for 
2N3584 and 2N3585. 



2 04 06 

COLLECTOR CURRENT (I c }— A 



Fig.3— Typical collector-to-emitter saturation 
voltage vs. current for 2N3584 
and 2N3585. 



96. 



POWER TRANSISTORS 



2N3583-2N3585, 2N4240, 40374 



ELECTRICAL CHARACTERISTICS «f C*se Temperature (T c ) ' 


25°C Unless Otherwise Specified 








CHARACTERISTICS 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLT- 
AGE 
V dc 


CURRENT 
mA dc 


2N3S83 
40374 


2N3584 


2N3585 


2N4240 


M 


Vbe 


•C 


'e 


4» 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


Collector-Cutoff 
Current 


'ceo 


150 











- 


10 


- 


5 


" 


5 


- 


5 


mA 


Collector-Cutoff 
Current 


'CEV 


225 
340 
450 


-15 
-15 
-1.5 








- 


1.0 


- 


1.0 


- 


1.0 


" 


2.0 


mA 


At T c = 150°C 


'cev 


225 
300 


-1.5 
-15 








- 


3 


- 


3 


- 


3 


- 


5.0 


mA 


Emitter-Cutoff 
Current 


'ebo 




-6 









- 


5.0 


- 


0.5 


- 


0.5 


- 


0.5 


mA 


DC Forward- 
Current 
Transfer Ratio 


h FE 


2 
2 

10 
10 
10 
10 




750" 
1A» 
100" 
750" 
750' 
1A 






40 
40 

10 


200 


8 
40 

25 


80 
100 


8 
40 

25 


80 
100 


10 
40 
30 


100 
150 




Collector-to-Emitter 
SustainingVoftage: 
With base open 


V CE0 (susl 






200 







175* 


. 


250 # 


_ 


300* 


_ 


300* 


_ 


V 


With external base- 
to-emitter resis- 
tance (R BE )=50 u 


'CER 


250 
300 
450 




200 






— 


1.0 


- 


1.0 


_ 


1.0 


1 


1.0 


mA 


Emitter-to-Base 
Voltage 


v EB0 









5 




" 


" 


- 


- 


- 




- 


- 


V 


Baseto-Emitter 
Saturation Voltage 


V BE (sat) 






750" 
1A" 




75 
100 


" 


1.4 


" 


1.4 


- 


1.4 


- 


1.8 


V 


Collector-to-Emitter 
Saturation Voltage 


V CE (sat) 






750" 
1A* 




75 
125 


' 


5 




0.75 




0.75 




1.0 


V 


Small-Signal Forward 
Current Transfer 
Ratio 

f = 5 MHz 

f = 1 kHz 


hfe 


10 
30 




200 

100 






3 
25 


350 


3 


_ 


3 


- 


3 


_ 




Magnitude of Com- 
mon-Emitter, Small- 
Signal, Short- 
Circuit, Forward 
Current Transfer 
Ratio 
f = 5 MHz 


l h fel 


10 




200 






2 




2 




2 




3 


- 




Output Capacitance: 
V CB =10V.f=1MHz 


^-obo 















120 




120 




120 




120 


pF 


Second- Breakdown 
Collector Current 
With base forward- 
biased** 


'S/b 


100 










350 




350 




350 




350 




mA 


Second- Break down 
Energy with base 
reverse-biased 
R BE = 20fi, 
L = 100>H 


E S/b 




-4 


1A 
pk 






50 


" 






" 




50 


- 


f-l 


RbE = 20S2: 
L= 100 uH 






-4 


2A 

pk 










200 




200 






- 


Saturated Switching 
Time(Vcc=200V): 
Rise Time 
(See Figs. 13 & 
16) 


t r 






1A 
750 




100 
75 


" 


^ 


" 


3 


- 


3 


- 


0.5 


MS 


Storage Time 
(See Figs. 14 & 
16) 


•s 






1A 
750 




100 
75 


_ 


_ 


" 


4 


- 


4 


" 


6 


Fall Time 
(See Figs. 15 & 
161 


'f 






750 
1A 




75 
100 


" 


- 


- 


3 


- 


3 


- 


3 


Thermal Resistance: 
Junction-to-Case 


R 0JC 












5 (Max.) 
2N3583 


- 


5 


- 


5 


- 


5 


°C/W 


Junction-to- 
Ambient 


R JA 












70 (Max.) 
2N3583 
30 (Max.) 
40374 


- 


70 


- 


70 


" 


70 



* In accordance with JEDEC registration data formal JS-6 RDF-2 (2N3583), JS-6 RDF 1 (2N3584, 2N3585, \ 

* CAUTION: The sustaining voltages Vq E q(sus) and V££p(sus) MUST NOT be measured on a curve tracer. 
"Specified value of Ig/b tor given value of V(; E as base voltage is increased from zero in a positive direction. 

* Pulsed, pulse duration = 300 ms; duty factor < 2%. 




Fig. 4— Reverse-bias second breakdown 
characteristics for 2N3584 and 
2N3585. 





































































?+rt 


4: 


~+- -j- 




i 3 
i . 

X 












HH 


■ll, 

"Ttt 








::n 


■ir 


, i .•_„„..--„ r 




Uij 




^i 






ill 




::•'. 




!•:! }:!■:: -.:-: 



EXTERNAL BASE-TO-EMITTER RESISTANCE (R BE I — O 

Fig.5— Reverse-bias second breakdown 
characteristics for 2N3584 and 
2N3585. 







































































3 

T 


INDUCTANCE ID • lOOpH ^-- 












































tt 




::::::::::::;:4^^ffl::: 












> 1 
s 

1 rf 












































































:E:^::!:^:|:^::4:: || t .{. 


it I 




# 


Hi- 






ti ■ -t 4 + *- 










: = : = :::^--f ""^ ? jlT f 


f r'F 






Hr 






H 


--_--_--- ■■■ -— ■ - - ■■■ j ■■ ■ 


11 HI 


ilk 


t 


-It 















BASE-TO-EMITTER VOLTA0E &&)— V 

Fig.6— Reverse-bias second breakdown 
characteristics for 2N3584 and 
2N3585. 



COLLECTOR-TO-EMITTER VOLTAGE IVqe) • 10 V 








90 

1 ^ 

1 

S 30 
3 20 

i 

rO 



















n/ 




•°/ 




p# 








*/ 




nil 












-7 














fl 














$E~ 














l 
































if 













































BASE-TO-EMITTER VOLTAGE (V BE I — V 

Fig. 7— Typical input characteristics for 
all types. 



97 



POWER TRANSISTORS 



2N3583-2N3585, 2N4240, 40374 



6 

4 

2 

4 

1 1 
O 8 

H 

— 6 

| 4 

o 

$ * 

O • 
6 

4 

2 

0.01 








































-r* 






If. 


»AX. (C0NTINU0US)(2N3S83 0NLY)| 






-:: 






































V.:: 




™ 


! 1 




i'W 






i 






ISid 


E_ = H- 










s 


Si- r 








m 


'■iS'c 


38 


W>* 










ml\<4 




sii 


hIIp 


|g 
















TS'CIZSV 
100 "0(20 


i)H* 












W)r 






S|jCi : = 






- : :? tM^- 


-LIMITEI 
PE— 2.5) 


f tffi 


"129*0 (16*)?" 








* 


V" 




fei(SU) 






























I7H - 


F'r" 












■ tt 














;;;; 


il|y* 


Ski! 






5 £r. .^ =. 








' 










:±= 


HP 






:= ~*- ~ — 


















if 




IB 


1 = 1: 
















tth 
















■* 










JE? 


^^.[Upillii-^-k^^tlflB 


Sif ■ ■ 


• :j:p 


















vce 




£|i 


T T1 












-rfii 


■iiS 


1 


VCEO MAX.«2S0V fa lii 










_ 




-- 






1 










2N 


M85ft2 


HZ' 


►9>!ffi§ 







468 2 488. 

10 100 

C0LLECT0R-T0-EMITTER VOLTAGE <Vc£>- 



Fig.8-Maximum operating areas for 2N3583, 2N3584, 2N3S85, 
and 2N4240 (pulse conditions). 




1 4 • e ,o * 4 ' 8 ioo 

COLLECTOR-TO-EMITTER VOLTAGE <VcE>— V 



Fig.9-Maximum operating areas for 2N3583, 2N3584, 2N3585. 
and 2N4240 (dc conditions). 




COLLECTOR-TO-EMITTER VOLTAGE (Vet) — V 

MSS-3II5RI 

Fig. 10— Maximum operating areas for 40374. 



1 

1 

a soo 

S TOO 
i tOO 
S 900 
u 400 

8 joo 


c»s 


E T 


[MP 


RAT 


URE 


ITc 


l-l 


l*C |l|[||||||||||||||||||||ffftffi 


n 






~ii 


:-l : : 


*?, 










§. 


5= 


1,4, 






^ as »*TTs.|||||[||||||||||||||||||||ffl 


% 






=,> 












jj"sj§ 


















200 






fiL 


ASE 


CU 


iRtN^iA?!'"* fHtifHftillllllllnill 


100 







29 SO 75 100 129 ISO 179 

COLLECTOR-TO-EMITTER VOLTAGE 1V c e1— V 

»2CS<20002 

Fig. 1 1 — Typical output characteristics for 
2N3583 and 40374. 



1.2 
10 

1" 

| 0.6 

i 0.4 

2 


- 


; PULSE OURATION- 20 »1 1 
■^—i REPETITION RATE • 1000 PULSES/I - 

i COLLECTOR SUPPLY VOLTAGE <V CC ) ■ 200 V 
■^-—i CASE TEMPERATURE (T<.) • 25 # C - 

| X »l ,X B2 






;::;:;; 


■;: 


I 




\\ '; :"":'": ' 




! 


i. 




\ 


.: : 




! 


; : 














\!\i 






; : I::': 






k V 1 ; i • 


J 


















\: ! >.\0-l 
■^*»- J DC RFTAIWE. 1 — H 


! 






: T^ 


• 1 -1 - 












I ;" : 


j 1 






'■T 





Fig. 12— Typical rise time vs. collector current 
for 2N3S84 and 2N3585. 



PULSE DURATION! 20m> 


















COLLECTOR SUPPLY VOLTAGE (Vcr> a 2COV 
CASE TEMPERATURE (Tc> • 28»C 
I B,-lB2 


























'■'■'•'■aS 

X 

| 6.0 

i 40 

* 20 
























































































































































£e 




























Hr 


'ft. 

















































































2 4 6 8 10 12 14 16 16 2 
COLLECTOR CURRENT (Ijl — A 



Fig. 13— Typical storage time vs. collector 
current for 2N3584 and 2N3585. 



X 

\_ 

I 


64 

0.6 
0.7 
0.6 
OS 
0.4 
0? 


! 


PULSE DURATION >20u> 




: 






COLLECTOR SUPPLY VOLTAG 
CASE TEMPERATURE (Tjl • 2! 

I 8,'l82 


EIV 
•C 


-c>- 


200 


V 




1 i ' i I i ! 












! \ 






■ ■ 


















! 




























i 






5s 




















■ .: 


f\ 


'IP 




















'•*■ 

































































COLLECTOR CURRENT lie)— A 

KSS-3IZ5NI 

Fig. 14— Typical fall time vs. collector cur- 
rent for 2N3584and2N3585. 




COLLECTOR SUPPLY VOLTAGE IV55I — V 

Fig. 15— Typical rise time, fall time, and 
storage time vs. collector supply 
voltage for 2N3584 and 2N3585. 



98 



POWER TRANSISTORS 



2N3715, 2N3716 



Silicon N-P-N Epitaxial-Base High-Power Transistors 



They differ in voltage ratings and in the 
currents at which the parameters are con- 
trolled. Both are supplied in the steel JEDEC 
TO-204MA hermetic package. 



Rugged, Broadly Applicable Devices 
For Industrial and Commercial Use 

The RCA-2N3715 and 2N3716 are epitaxial- 
base silicon n-p-n transistors featuring high 
gain and high current. They may be used as 
complements to the RCA-2N3791 and 
2N3792 respectively. These devices have a 
dissipation capability of 150 watts at case 
temperature up to 25°C. 



MAXIMUM RATINGS, Absolute-Maximum Values: 

2N3715 

* v CBO 80 

* v CEO* sus ' 6° 

* V EBO ^ 

* "c 10 

* 'B 4 

* P T 

AtT c <25°C 150 

AtT c >25 C Derate linearly 

* T stg. T J -< 

* T L 

At distance ^ 1/32 in. (0.8 mm) from seating 

plane for 10 s max 

* In accordance with JEDEC registration data. 



0.86 



2N3716 




100 


V 


80 


V 


7 


V 


10 


A 


4 


A 


150 


W 




.o 


>200 


- °C 



Features: 

■ High dissipation capability 

■ Low saturation voltages 

■ Maximum safe-area-of-operation curves 

m Hermetically sealed JEDEC TO-3/TO-204MA 
package 

■ High gain at high current 

■ Thermal-cycling rating curve 



Applications: 

■ Series and shunt regulators 

■ High-fidelity amplifiers 

■ Power-switching circuits 

■ Solenoid drivers 



TERMINAL DESIGNATIONS 




JEDEC TO-204MA 




COLLECTOR-TO-EMITTER VOLTAGE (V CE >— V 

92CM-30MO 

Fig. 1 — Maximum operating areas for 2N3715. 



IO 
8 

6 
4 

< 

I 

u 2 
H 

Z 
K 
































50 pMC 


W LESS S\ 








500 p»c 






SallcT 


3 DC / 








° 0.8 

CC 

O 

8 °' 4 

0.2 
O.I 










































CASE TEMPERATURE (T C )«25*C 
(CURVES MUST BE DERATED LINEARLY 
WITH INCREASE IN TEMPERATURE) 

I I I 





COLLECTOR -TO- EMITTER VOLTAGE <W)-V 

Fig. 2 — Maximum operating areas for 2N3716. 



99 



POWER TRANSISTORS 

2N3715, 2N3716 



ELECTRICAL CHARACTERISTICS, 

at Case Temperature (Tq) = 2S°C Unless Otherwise Specified 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N3715 


2N3716 


V C E 


VfJE 


•c 


'B 


MIN. 


MAX. 


MIN. 


MAX. 


'CEX 


80 
100 


-1.5 
-1.5 






_ 


1 


_ 


1 


mA 


'CEX> 
T C =150°C 


60 
80 


-1.5 
-1.5 






- 


10 


_ 


10 


mA 


'ceo 


30 
40 










- 


0.7 


— 


0.7 


mA 


'ebo 




-7 







- 


1.0 


- 


1.0 


mA 


V CE0 (sus)b 






0.2 





60 


- 


80 


- 


V 


hFE 


2 
2 

4 




1a 
3a 
10 




50 

30 

5 


150 


50 

30 

5 


150 




V B £a 


2 




3 




- 


1.5 


- 


1.5 


V 


V BE (sat)a 






5 


0.5 


- 


1.5 


- 


1.5 


V 


V CE (sat)a 






5 
10 


0.5 
2.0 


- 


0.8 
4 


: 


0.8 

4 


V 


Ih fe l 
f = 1 MHz 


10 




0.5 




5 


- 


5 


- 




f hfe 


10 




0.5 




30 


- 


30 


- 


KHz 


h fe 
f = 1 KHz 


10 




0.5 




25 


250 


25 


250 




c ob 
V CB = 10 V 

f = 1 MHz 











- 


250 


- 


250 


pF 


tp= 1s 


40 








2.7 


- 


2.95 


- 


A 


R 0JC 










- 


1.17 


- 


1.17 


°C/W 



* In accordance with JEDEC registration data. 
a Pulsed; pulse duration = 200 /us, duty factor = 1 . 



b CAUTION: Sustaining voltages Vq^q(sus) 
and V(-.£p(sus) MUST NOT be measured on 
a curve tracer. 



















































































































































































if::! 






























































u. 




















° 40--- 














































































ui 20 



































































Fig. 3 — Derating curve. 



1 00 

* „ 

I 

* 

10 














— 






















±A 










X 


'A 
















\\ 




<& 


T 


j \ — 

No 

8 ' . 


1 \ 

\ 










% 


V 


c*» 





NUMBER OF THCRMM. CYCLES (IN THOUSANDS) 



92CS-I9970M 



Fig. 4 — Thermal-cycling rating chart. 



_ 360 

30 ° 

< 

5 340 

>- 180 

i 

§ 12° 

1 60 

e 

8 


COLLECTOR-TO-EMITTER VOLTAGE (V CE )>4V 
CASE TEMPERATURE <T C )"25'C 























































































































































































001 



6 8 2 4 6 8 

0.1 I 

COLLECTOR CURRENT (I r ) ■ 



10 



92CS-29003 

Fig. 5 — Typical dc beta characteristics for 
both types. 




BASS-TO-EMITTER VOLTAGE (V BE ) — V 

92CS-29007 

Fig. 6 — Typical transfer characteristics for 
both types. 




o.s I 

BASE-TO-EMITTER VOLTAGE (V BE )-V 

Fig. 7 — Typical input characteristics for 
both types. 



8 

I 7 

S 

J, 6 
Z 5 

| 4 

§ 

z 

a 2 

3 1 


COLLECTOR-TO-EMITTER VOLTAGE (V CE )« 4 V 
CASE TEMPERATURE (T c ) ■ 25"C 



























































































































































































































COLLECTOR CURRENT (I c l — A 



92CS- 29004 



Fig. 8 — Typical gain-bandwidth product for 
both types. 



100 



POWER TRANSISTORS 



2N3771, 2N3772, 2N6257, RCS258 

Hometaxial-Base, High-Power N-P-N Transistors 



Rugged Silicon N-P-N Devices for Applications in Industrial and 
Commercial Equipment 



These RCA types are hometaxial base, regulator driver and output stages, dc-to- 
silicon n-p-n transistors intended for a dc converters, inverters, and solenoid 



wide variety of high-power, high-current 
applications. Typical applications for these 
transistors include power-switching cir- 
cuits, audio amplifiers, series- and shunt- 



(hammer)/relay driver service. 

All devices employ the popular JEDEC 
TO-3 package; they differ in maximum 
ratings for voltage, current, and power. 



MAXIMUM RATINGS. Absolute-Maximum Values: 

"COLLECTOR-TO-BASE VOLTAGE V CB0 

"COLLECTOR-TO-EMITTER VOLTAGE: 

With -1.5 V (V BE )&R BE = lOOfi V CEX 

With base opea ^CEO 

"EMITTER-TO-BASE VOLTAGE V EB0 

"CONTINUOUS COLLECTOR CURRENT I c 

'PEAK COLLECTOR CURRENT I CM 

"CONTINUOUS BASE CURRENT I B 

"PEAK BASE CURRENT I BM 

"TRANSISTOR DISSIPATION: P T 

At case temperatures up to 25°C 

At case temperatures above 25°C 
"TEMPERATURE RANGE: 

Storage & Operating (Junction) 

"PIN TEMPERATURE (During soldering): 

At distance > 1/32 in. (0.8 mm) from seating plane for 10 s max. 

•In accordance with JEDEC registration data format JS-6 RDF 2. 



2N3772 

100 



RCS258 

100 



150 150 150 250 
Derate linearly to 200°C 



Features: 

■ High dissipation capability 

■ V CEX (sus) at 3 A = 50 V min. 

(2IM3771, 

2N6257) 

= 90 V min. 

(2N3772) 

■ 15-A specification for: 

h FE , V BE# & V CE (sat) 
(2N3771, 2N6257) 

■ 10- A specification for: 

h FE ,V BE ,&V CE (sat) 
(2N3772, RCS258) 

■ Low saturation voltage with high beta 



TERMINAL DESIGNATIONS 




! IOO 

* 

15 






Tj MAX.. 20C 

I 


•c 






















s. 








v 












































fe 


ft 


<• 














e 




&— 


S&r 










k.">- 


'"•r 








*J 












5 


6 




) 4 










o ! 








t 


s 2 



Fig. 1 — Thermal-cycle rating chart for 2N3771 , 
2N3772, and 2N6257. 



° I60 
ir I40 
2 I20 
*~ IOO 
£ 80 
° 60 

1 "° 


COLLECTOR-TO-EMITTER VOLTAGE (V CE 1-4V 








! ! 1 ' 






I * 






! : ! 




1 




1 , . , 

; : • ' 1 










| 










1 


^izri^s^v i 








. :...1 S !CVV. 












t> 


! 










^> 


N£ 














1 1 1 































COLLECTOR CURRENT (I c ) A _ 

Fig. 4 — Typical dc beta characteristics for 
2N3772, 2N6257 and RCS258. 



* 200- 

S 


1 












| 


•C- — 










;<' 


^, 


j 








5 • 






fc% 










l V 














\\ 








*, 

N& 






to 


^fe. 




ii- 


Ir 





NUMBER OF THERMAL CYCLES 



Fig. 2 — Thermal-cycle rating chart for RCS258. 

































COLLECTOR CURRENT (I c )/ BASE CURRENT (I B ). 10 












































































































::::;:::: 




























20 

s 

o 10 

S 

i s 
8 
















































*P 


>' 




















w 






■ . 




















#/ 




>:; 


























/ 






















'■f- 






















:::: 


&A 








'::':': 


'■:■:■:-. 




: .:V: 








•;:• 


3?f ■'' 


































:-.:: 














:::: 




ri 




/ 


:;:: 


'rfi 


m 


':::: 


;::; 


















■•• 



° J60 
a 140 
z 120 
*~ IOO 
a SO 
u 60 

f 4 ° 
^ 20 


COLLECTOR-TO-E 


MITTER VOLTAGE IV CE |.4V 1 
























1 












"-*~^ "^Sl c. 1 












! ( V 




1 

. 1 








_H ^ 














"T i J °^i 


k^ 


*ۥ 














\ 


\}?j 












i 




\K 








i l> 


1 i 








is 

























CURRENT (Ir) — A 



Fig.3— Typical dc beta characteristics for 
2 N 3771. 



L 

o 13 

ui 10 

5 


CC 


N.LECT0 


R CURRENT (Ic) / 


BASE CURRENT 


[iai- 


of 
















































:±::::::: 


* 




r,'fo4 : 






iff:::::: 


£ 














E""3 


^/fl/ ' ff" 










wl 










^ 


+ "Sa5 





























































-TO-EMITTER SATURATION VOLTAGE [v CE (Mt^-V 



COLLECTOR-TO-EMITTER SATURATION VOLTAGE [v ce (tat)] - 



Fig. 5— Typical saturation-voltage characteristics Fig. 6 — Typical saturation-voltage characteristics 
for 2N377 1 . for 2N3772, 2N6257 and RCS258. 



.101 



POWER TRANSISTORS 



2N3771, 2N3772, 2N6257, RCS258 



ELECTRICAL CHARACTERISTICS, At Case Temperature (T c ) = 25° Unless Otherwise Specified 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
V dc 


CURRENT 
A dc 


2N3771 


2N3772 


2N62S7 


RCS2S8 


^B 


VCE 


VBE 


'c 


'B 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


Collector-Cutoff Current 
With emitter open 


'CBO 


50 
100 










- 


2* 


- 


5* 


- 


4 


- 


5 


mA 


With base-emitter junction 
reverse-biased 


'CEX 




45 
50 
100 


-1.5 
-1.5 
-1.5 






- 


2 




5 




4 




5 


mA 


With base-emitter junction 
reversed-biased,Tfj=150°C 


'CEX 




30 
45 
30 


-1.5 
-1.5 
-1.5 








10 




10 




20 


- 


10 


mA 


With base open 


'ceo 




25 
30 
50 











- 


10 


_ 


10 




10 


_ 


10 


mA 


Emitter-Cutoff Current 


'ebo 






-5 

-7 








- 


5 


- 


5 


- 


10 


- 


5 


mA 


DC Forward Current Transfer 
Ratio 


h FE 




4 
4 
4 
4 
4 




30" 
20" 
15 a 
10" 
8" 




5 
15 


60 


5 
15 


60 


5 
15 


75 


5 
15 


60 




Col lector- to- Emitter 
Sustaining Voltage 
With base-emitter Junc- 
tion reversed-biased 

(r be = loom 


V CEX (sus) 






-1.5 


0.2" 




50 


- 


80 


- 


50 


- 


80 


- 


V 


With external base-to- 
emitter resistance 

(R BE ) = ioon 


V CER (sus) 








0.2 a 




45 


- 


70 




45 


- 


70 


- 


V 


With base open 


V CEO lsus) 








0.2 a 





40 


- 


60 


- 


40 


- 


60 


- 


V 


Base-to-Emitter Voltage 


V B E 




4 
4 
4 




15" 
10" 
8" 




- 


2.7 


- 


2.2 


- 


2.2 


- 


2.2 


V 


Collector-to-Emitter 
Saturation Voltage 


V CE (sat) 








30" 
20" 
15" 
10 a 
8' 


6 
4 

1.5 
1 

0.8 


- 


4 
2 


- 


4 
1.4 


- 


4 

1.5 


- 


4 
1.4 


V 


Second- Breakdown 
Collector Current 
With base forward- 
biased and 1— s 
nonrepetitive pulse 


'S/b b 




60 ' 
40 








3.75 


- 


2.5 


- 


3.75 


- 


4.2 


- 


A 


Second-Breakdown Energy 
With base reverse biased and 
L=40mH, R BE =100n 


Es/b C 






-1.5 


5 




500 


- 


500 


- 


500 


- 


500 


- 


mJ 


Magnitude of Common- 
Emitter, Small-Signal, 
Short-Circuit, Forward 
Current Transfer Ratio 
(f = 0.05 MHz) 


Kel 




4 




1 




4* 


16 

(Typ) 


4* 


16 
(Typ) 


4* 


16 
(Typ) 


4 


16 
(Typ 




Common-Emitter, Small- 
Signal, Short-Circuit, 
Forward Current Transfer 
Ratio (f = 1 kHz) 


h fe 




4 




1 




40 


- 


40 


- 


40 


- 


40 


- 




Thermal Resistance: 
Junction-to-Case 


R 0JC 












- 


1.17 


- 


1.17 


- 


1.17 


- 


0.7 


°C/W 



* In accordance with JEDEC registration data formal JS-6 RDF-2. 

* Pulsed; pulse duration = 300 ps, rep. rate = 60 Hz, duty factor < 2%. 

b 'S/b ' s d e ^ ne d at the current at which second breakdown occurs at a specified collector voltage with the emitter-base 

junction forward biased for transistor operation in the active region, 
c Eg/b is defined as the energy at which second breakdown occurs under specified reverse-bias conditions. Eg/t, = V4LI , 

where L is a series load or leakage inductance and I is the peak collector current. 



102 



POWER TRANSISTORS 



2N3771, 2N3772,2N6257, RCS258 




f IO 

COLLECTOR-TO-EMITTER VOLTAGE (V C e>— V 

92CS-2855I 
Fig. 7- Maximum operating areas for 2N3771, 2N3772, and 2N6257. 



IOO 



CASE TEMPERATURE (Tc)-2S*C 
(CURVES MUST BE DERATED LINEARLY 
WITH INCREASE IN TEMPERATURE) 




4 8 

60 IOO 

COLLECTOR-TO-EMITTER VOLTAGE (Vce>— V 

Fig. 8— Maximum operating areas for RCS258. 



IOOO 



92CS- 26449 



103 



POWER TRANSISTORS 



2N3771, 2N3772, 2N6257, RCS258 



IS 


COLLECTOR- 


TO 


-EMITTER 


VOL 


iagj 


(V C E> " <v 1 1 1 1 1 1 - 






j-H'vjrf 


w 






j_ 






"t^THrf 








z '0 

5 


Ij 










I S 

















BASE-TO-EMITTER VOLTAGE 1V BE ) — V 

Fig. 9— Typical transfer characteristics 
for 2N3771. 



19 
z l0 


COLLECTOR-TO- EMITTER VOLTAGE (V CE )'«V 1 1 1 1 1 | 1 1 1 j- 




























m 




,t» H- 




i^o/iF 




1 
u 5 

i 


1 1 ]<ff 





















CASE TEMPERATURE (T C )'25«C 



BASE-TO-EMITTER VOLTAGE (Vfcj) — V 

92CS-I9902 

Fig. 10— Typical transfer characteristics tor 
2N3772, 2N6257and RCS2S8. 




Fig. 1 1— Typical output characteristics for 
2N3771. 



COLLEC 


TOR 


TO- 


EMI1 


TE 

m 


> VOLTAG 


PI 


e'- 


4V 








=?$ 


rffl 


OB 
« 0.S 

i" 

Joe 
t 

5 M 

a 04 

3 0.3 

0.2 
O.I 


































=r 














S 


$## 




TrT 










::: 


«'*&! 












— : 




fat 








:::- 


raSjl 












SH 




•Hi 








— < 






=~ 


-•*? 














nn 


rrrl 




-fit*. 




-T 






T= 


pHi 


iiii 




N 




















=:: 


:::: 


.;■ 






Hff 


= 




V 




riii 










= :: 






: ;:; 


:::■ 


:;•: 






















frL 


:;;: 





















BASE-TO-EMITTER VOLTAGE (V BE I-V 

92CS-I3IM 

Fig. 12— Typical input characteristics for 
2N3771 and2N62S7. 



COLLECT 


OR- 


TO-E 


MIT 


TER 


VOL 


rAGE 


(V C 


e'- 


f* 






£f 




































0.8 
0.7 

Io.. 

Si! 

|o.« 

5 0.3 

8 0.2 
8 0.I 








































al 


































wk 


























5£ 


^ 


EBB 




TTTt 


m 










^ 


=ffl 




n 


s 


w 


tS 


^rr 





BASE-TO-EMITTER VOLTAGE (V B el — V 

Fig. 13— Typical input characteristics for 
2N3772 and RCS258. 




COLLECTOR-TO-EMITTER VOLTAGE (V CE I— V 



Fig. 14— Typical output characteristics for 
2N3772, 2N6257and RCS258. 



104 



POWER TRANSISTORS 



2N3773, 2N4348, 2N6259 

Hometaxial-Base, High Current Silicon N-P-N Transistors 

Rugged High-Voltage Devices for Applications 
in Industrial and Commercial Equipment 



These RCA types are hometaxial-base silicon n-p-n tran- 
sistors intended for a wide variety of high-voltage high- 
current applications. Typical applications for these tran- 
sistors include power-switching circuits, audio amplifiers, 
series- and shunt-regulator driver and output stages, dc-to-dc 



converters, inverters, and solenoid (hammerl/relay driver 
service-. 

These devices employ the popular JEOEC TO-3 package; 
they differ in maximum ratings for voltage, current, and 
power. 



Features: 

■ High dissipation capability - 
120 W (2N4348), 150 W (2N3773). 250 W (2N62S9) 

■ 5-A specification for hpE. VflE. * VcE<»t) (2N4348) 

■ 8-A specification for 

"FE. VBE. & VcE(sat) (2N3773, 2N6259) 

■ VCEX- 

140 V min (2N4348). 160 V min (2N3773I 
170 V min (2N6259) 

■ Low saturation voltage with high beta 



TERMINAL DESIGNATIONS 



MAXIMUM RATINGS. Absolute-Maximum Values: 

"COLLECTOR-TO-BASE VOLTAGE v CBO 

COLLECTOR-TO-EMITTER VOLTAGE. 

With base open ^CEO 

With reverse bias (V BE I of -1.5 V V CEX 

"EMITTER-TO-BASE VOLTAGE V EB0 

"COLLECTOR CURRENT: | c 

Continuous 

Peak 

*BASE CURRENT: l B 

Continuous 

Peak 

"TRANSISTOR DISSIPATION: P T 

At case temperatures up to 25°C 

At case temperatures above 25°C 

"TEMPERATURE RANGE: 

Storage & Operating (Junction) 

*PIN TEMPERATURE (During Soldering): 

At distances > 1/32 ir\, 10.8 mm) from case for 10 s max 

In accordance with JEDEC registration data format (JS-6, RDF-2). 



2N4348 

140 



2N3773 

160 



2N6259 

170 



150 
170 



} ISO 251 

Derate linearly to 200°C 

65 to +200 

230 



0.1 



CASE TEMPERATURE <T C ) = 25*C 
(CURVES MUST BE DERATED LINEARLY 
WITH INCREASE IN TEMPERATURE.) 




10 "IOO 200 

COLLECTOR-TO-EMITTER VOLTAGE (V^) — V 

Fig. 1 • Maximum operating areas for 2N3773. 




JEDEC TO-3 



* 

i I00 

* 






Tj MAX..20O"C 










































Ss 












! 












fr 


<• 








i 








\ 








^ 




'o. 








5 




V 


X?. 












5 


« 1 


10* 










s 








i 


o« 2 



NUMBER OF THERMAL CYCLES 



Fig. 2 - Thermal-cycle rating chart for 2N3773. 



100 

* * 

1 
5- 

jjj * 

10 








1 1 1 






















1 1 






















1 






















\ 1 


























X^p 




























X 


\ 




























^ 


yO 


















I 


v 








X>3 


X" 












\ 


5, 


\ 


\ 






*, 








































e 2 



NUMBER OF THERMAL CYCLES 



Fig. 3 • Thermal-cycle rating chart for 2N4348. 





! 1 1 1 i ! ! 


l 


9 
I 

i j 


__ F Tj MAX .200-C . 


1 ! ! 






i 1 




2 ' 00 


V \ jsT<«- 1 


i 




2 


k\ x ! 


\ < **, 


i 




* 








1 ^s! 


hXft> ' 






il 


\ 






1 


r^s 





M6ER OF THERMAL CYCLES 



Fig. 4 - Thermal-cycle rating chart for 2N6259. 

105 



POWER TRANSISTORS 



2N3773, 2N4348, 2N6259 

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)-25°C Unless Otherwise Specified 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
V dc 


CURRENT 
A dc 


2N4348 


2N3773 


2N626S 


VCE 


V B E 


'C 


•b 


Min. 


Max 


Min. 


Max 


Min. 


Max 


Collector-Cutoff Current: 

With emitter open, V CB -140 V 


ICBO 










- 


... 


" 


2 


- 


- 


mA 


With base-emitter 

junction reverse-biased 


'CEX 


120 
140 
150 


-1.5 
-1.5 
-1.5 






~ 


2 


: 


2 


1 


0.2 


mA 


With base-emitter 

junction reverse-biased 
endTc - 150°C 


l CEX 


120 
140 
150 


-1.5 
-1.5 
-1.5 






~ 


10 


~ 


10 


- 


4 


mA 


With base open 


'CEO 


100 
120 








_ 


20 


- 


10 


_ 


2 


mA 


Emitter-Cutoff Current 


'EBO 




-7 







- 


5 


- 


5 


- 


2 


m'A 


DC Forward Current 
Transfer Ratio 


"FE 


4 
4 
2 
4 
4 




5" 

8" 
8» 
10» 
16" 




15 
10 


60 


15 
5 


60 


15 
10 


60 




Collector-to-Emttter 
Sustaining Voltage: 

With base-emitter junction 
reverse-biased (R(JE = 100!!) 


V CEX lsus) 




-1.5 


0.1 




140 




160 




170 




V 


With external base-to-emitter 
resistance IRbeI " 1001! 


VcerIsus) 






0.2» 




140 




,150 


^ 


160 


" 


V 


With base open 


VcEO'susl 






0.2" 





120 


- 


140 




150 


- 


V 


Base-to-Emitter Voltage 


vbe 


4 
4 
2 
4 




5a 
8» 
8" 
10* 




" 


2 
3 


" 


2.2 




2 


V 


Collector-to-Emitter 
Saturation Voltage 


V CE lsatl 






5» 
8 a 
10» 
16» 


0.5 
0.8 
1 25 
32 


- 


1 
2 


- 


1.4 

4 


" 


1 
25 


V 


Second- Breakdown 
Collector Current 
With base forward-biased and 
1-s nonrepetitive pulse 


IS/b b 


80 
100 








1.5 


" 


1. 5 




2.5 


- 


A 


Second-Breakdown Energy 
With base reverse-biased and 
L MOmH, R BE = 100!! 


Es/b c 




-1.5 


2.5 




0.125 




0.125 


- 


0.125 


" 


J 


Megnltude of Common-Emitter, 
Small-Signal, Short-Circuit, 
Forward Current Transfer 
Ratio If' 50kHzl 


|h,e| 


4 




1 




4 


" 


4 


- 


4 


" 




Common-Emitter, Small- 
Signal, Short-Circuit, 
Forward Current Transfer 
Ratio If ■ 1 kHz) 


hfe 


4 




1 




40 


- 


40 


" 


40 


- 




Thermal Resistance 
Junction-to-Case 


R 0JC 










" 


1.46 


" 


1.17 


" 


0.7 


oc/W 



EDEC registration data for 
n - 300fit, rep. rate - 60 H 
: t urrent at which sacond break 



b, S/b '» defined 

transistor operation in the active region. 
c Es/ D is defined as the energy at which second break 

leakege inductance and I is the peak collector currer 



JS-6 RDF-2. 

down occurs at a specified co 



/oltage with the emitter base junc 
>ias conditions. E S/b 1/2L|2 i 




C0LUECTOR CURRENT (I c ). 



Fig. 5 • Typical dc beta characteristics for 
2N3773. 



-^200 

- iao 

3 160 

1 l4 ° 

1 120 

i wo 

1- 


COLLECTOR-TO-EMITTER VOLTAGE IV CE I>4V 






1 
























































"\ 


:ase te» 


PERA 








i 














I 










> 


, 




J 






! 




25*e 






\ 




























\ 














1 














^ 


^ 












.... g 
















N 


*. 


















— 








1 1 ■— ^ 


■ 







COLLECTOR CURRENT II C 1— * 

Fig. 6 • Typical dc beta characteristics 
for 2N4348. 



■^200 

It 

|'«o 
S 

1 l2 ° 

* 

$ »0 

s 

r° 

8 V 


cou 


ECTOR-TO-E 


MITTER VOLTAGE (V CE ).'2V Mil 








'< 






1 II 1 INI 










\ 


J 










nc 














< 
















































25*C, 












\ 




























A\ 


























\ 


\ 




















































N 


s 




























» 


>J^~ 






A 


1 


1 




< 


T 


1 1 




2 


1 


s • 


1 



Fig. 7 • Typical dc beta characteristics 
for 2N6259. 



II 

10 

1 
$ • 

X 

i • 

% 

a * 

i 

t 

9 


COaiCTW-TO-OltlTTOtVOLTlWtfvfctlMV f:j 


V 




















UHjiiijjgp 






















Swrgp'fj 


f- 




r : 










5$ 


)*i 










s~ 
















ngf«5*C: 
















W- 


iiu%T a 


















sj 




Lm: 










§H 






fe 












l| jIulLiuii 










L .::: 






























fill! 


T: :i|:: : :[i~ : 


iili 


















■^ 


iigJHfe: 


4::: 


:•_-. 







•AK-T0-EHITTER VOLTAGE (Vul— V 

HSS-32H 

Fig. 8 • Typical transfer characteristics for 
2N3773. 




8AM-T0-CMTTER VOLTAGE (V u l— V 



Fig. 9 ■ Typical transfer characteristics 
for 2N4348. 




■AU-TO-EMITTER VOLTAGE I Vj£l-V 

•2CS-ISSST 

Fig. 10- Typical transfer characteristics for 
2N62S9. 



106 



POWER TRANSISTORS 



2N3773, 2N4348, 2N6259 



CASE TEMPERATURE (T c ) = 25°C 
(CURVES MUST BE DERATED LINEARLY 
WITH INCREASE IN TEMPERATURE.) 




10 " 100 

COLLECTOR-TO-EMITTER VOLTAGE (V CE )— V 

Fig. 1 1 - Maximum operating areas for 2N4348. 



T 

^12.5 
5 10 
ir 75 

d 5 

2.5 






























' f~*-r 
























H^t 






























































!U' 


























; r? 






















5e' CURRENT (Ijl- 


500 mA 4; : 


"TT 






3:. sa 














-fj f- 400 wa -4-- 




200mA; + ; 


tjc 
































50 mA ; + ; 









































Fig. 12 ■ Typical output characteristics 
for 2N3773. 





CAS 








































































I 






















































£ 


























S "> 












mA 


= 
















300 mA : : 
:200 mA::: 


T.5 
u » 

" 2.5 












loomA::: 

-50mA --- 















Fig. 13 - Typical output characteristics for 
2N4348. 




4 68|Q 2 *»«>«» I00 

COLLECTOR -TO- EMITTER VOLTAGE (V C £)— V 



Fig. 14 - Maximum operating areas for 2N6259. 



92CS- 19561 



1 


































£12.5 

° 7 5 

u 5 

2.5 












BASE CURRE 


NT IB-600mA :: = = 














"TT : 400 mA : : : : 


























W-^omA;:::: 


H± 


4ttUt 











Fig. 15 ■ Typical output characteristics for 
2N6259. 



> I40 

I* 

Hi no 


"CER 










CASE TEMPERATURE (T C )«25'C 
















































l*i 


JJ» 








































V 


CEO 
















Sa 






























^J 












I ! 


«CER 


























'CEO 
















































































iA. 
































\j» 




































































VCEO 








6 












! 














68 



EXTERNAL BASE -TO-EMITTER RESISTANCE (RgE* — & 

F/'gr. 76 - Sustaining voltage as a function of 
base-to-emitter resistance for all 
types. 

107 



POWER TRANSISTORS 



2N3773, 2N4348, 2N6259 



T 

j5 ' 


COLLECTOR CURRENT <I C >/BASE CURRENT (I B >- 10 


























/ 


















CASE TEMPERATURE <T C )*25*C ^ y 




/' 






















/ 






















/x 

f / 


125' 


: 




































































1 












2 

O.I 




































,' 
























/ 


















/ 




1 




















/ 


/ 



















V.UI U.I 

COLLECTOR-TO-EMITTER SATURATION VOLTAGE Wee (lot)J— V 

Fig. 17 - Typical saturation-voltage 
characteristics for 2N3773. 



10 

1 
1 1 


COLLECTOR CURRENT (Xc) 


» 10 




/?■— 








BASE CURRENT 11,1 


























' , 


















| 


x 






















1 


/> 












CASE TEMP (T 


F 1 ' 


25"C 


'/ 






















^^125-C 


















= 


















0.1 
































/ / 






















^ 






















J 
























/ 


/ 






















\ 






















/ 























COLLECTOR-TO-EMITTER SATURATION VOLTAGE k^Mtil— V 

Fig. 18 - Typical saturation-voltage 
characteristics for 2N4348. 



• 
< 

g e 

2 
01 






1 1 




r- l 






7;^ 




C0LLCC1... . >-'--■• » "^ 


■' 






l 




'/ 








CAS£TEMPERATUREITc)"25* C 


/A 


■ 












\ 






/ K 

t 


I25»C 














/ 




















/ 




































/ 


















// 



















u.vi u.. 

COLLECTOR-TO-EMITTER SATURATION VOLTAGE I VCE<««t>|— V 
92CS-I9S54 

Fig. 19 - Typical saturation-voltage 
characteristics for 2N6259. 




BASE-TO-EMITTER VOLTAGE (V BE I — V 





O.S I I.S 2 

BASE-TO- EMITTER VOLTAGE (V BC )— V 



Fig. 20 - Typical input characteristics for 
2N3773. 



Fig. 21 - Typical input characteristics for 
2N4348. 



Fig. 22 - Typical input characteristics for 
2N6259. 



108 



POWER TRANSISTORS 



2N3791,2N3792 



Silicon P-N-P Epitaxial-Base High-Power Transistors 



Rugged, Broadly Applicable Devices 
For Industrial and Commercial Use 

The RCA-2N3791 and 2N3792 are epitaxial- 
base silicon p-n-p transistors featuring high- 
gain at high current. They may be used as 
complements to the n-p-n types 2N3715 and 
2N3716, respectively. These devices are in- 
tended for medium-speed switching and 
amplifier applications and feature a dissi- 



pation capability of 150 watts at case 
temperatures up to 25° C 

They differ in voltage ratings and in the 
currents at which the parameters are con- 
trolled. Both are supplied in the steel JEDEC 
TO-204MA hermetic package. 



Features: 

■ High dissipation capability 

■ Low saturation voltages 

■ Maximum safe-areas-of-operation curves 

■ Hermetically sealed JEDEC TO-204MA 
package 

■ High gain at high current 

■ Thermal-cycling rating curve 

APPLICATIONS: 



Maximum Ratings, Absolute-Maximum Values: 

* V CBO 

* V CEO 

* V EBO 

* 'c 

* 'CM 

* 'B 

* P T 

T C <25°C 

T c > 25°C derate linearly 

* T J- T stg ■ • • 

* In accordance with JEDEC registration data. 



2N3791 


2N3792 




-60 


-80 


V 


-60 


-80 


V 


-7 


-7 


V 


-10 


-10 


A 


-10 


-10 


A 


-4 


-4 


A 


150 


150 


W 










-65 to 200 


°c 



i Series and shunt regulators 
i High-fidelity amplifiers 
i Power-switching circuits 
i Solenoid drivers 

TERMINAL DESIGNATIONS 




JEDEC TO-204MA 




COLLECTOR-TO-EMITTER V0LTA6E <V CE >— V 



»2CM -30120 



-10 

8 

6 

4 

< 
1 

Z 

to 
































SO M MC. 

290 pue 

SOOfMC 

Imicc - 
SmttcT 


BR LESS -?\ 








3D-C S' 








0.8 

K 
O 
o °- 6 

8 °* 

0.2 
-0.1 










































CASE TEMPERATURE (T C )-ZS*C 
(CURVES MUST BE DERATED LINEARLY 
WITH INCREASE IN TEMPERATURE) 

1 1 1 





-20 -40 -60 -80 

COLLECTOR -TO- EMITTER VOLTAGE (^gl—V 



-100 
92CM-50I2I 



Fig. 1 — Maximum operating areas for 2N3791. 



Fig. 2 — Maximum operating areas for 2N3792. 



109 



POWER TRANSISTORS 



2N3791,2N3792 



ELECTRICAL CHARACTERISTICS, at Case Temperature 
(Tq) - 25°C Unless Otherwise Specified 





CHARACTERISTICS 


TEST CONDITIONS 


LIMITS 


UNITS 




VOLTAGE 
Vdc 


CURRENT 
Adc 


2N3791 


2N3792 




V C E 


v B e 


•c 


>B 


Min. 


Max. 


Min. 


Max. 


* 


'CEX 


-60 
-80 


1.5 
1.5 


_ 


- 


_ 


-1 


_ 


-1 


mA 




T c = 150°C 


-60 
-80 


1.5 
.1.5 


- 





- 


-5 


_ 


-5 


* 


■ceo 


-30 
-40 




- 


, _ 


_ 


-10 
-10 


_ 


-10 
-10 


mA 


* 


'ebo 




7 


- 


- 


- 


-5 


- 


-5 


mA 


* 


V CE0 (sus)b 






-0.2 





-60 


- 


-80 


- 


V 


* 


h FE a 


-2 
-2 

-4 




-1 

-3 

-10 


- 


50 

30 

4 


150 


50 
30 
4 


150 




* 


V B E 


-2 

-4 




-5 
-10 


- 


- 


-1.8 
-4.0 


- 


-1.8 
-4.0 


V 


* 


V BE (sat)« 






-5 


-0.5 


- 


-1.5 


- 


-1.5 


V 


* 


V CE (sat)a 






-5 
-10 


-0.5 
-2.0 


- 


-1 
-4 


_ 


-1 
-4 


V 


* 


f hfe 


-10 




-0.5 


- 


30 


- 


30 


- 


KHz 


* 


h fe f = 1 KHz 


-10 




-0.5 


- 


25 


250 


25 


250 




* 


|h fe | f=1MHz 


-10 




-0.5 


- 


4 


- 


4 


- 






'S/b tp=1s 


40 








2.7 


- 


2.95 


- 


A 


* 


c ob 

V CB = 10 V 
f=1MHz 











- 


500 


- 


500 


pF 


* 


R 0JC 










- 


1.17 


- 


1.17 


°C/W 



* In accordance with JEDEC registration data. 

■ Pulsed; pulse duration = 200 ms, duty factor = 1 .5%. 

b CAUTION: Sustaining voltage, V CE0 (sus), MUSTNOTbe measured on a curve tracer. 





BASE-TO-EMITTER VOLTMC l^E 1- » 



92CS-I0979 



oa -an -to -us -is -its -&o 

BASE-TO-EMITTER VOLTME(VeE>— V 




29 SO TS 100 129 ISO ITS 200 
CASE TEMPERATURE IT C I— 'C 

92CS- 22434 



Fig. 3 — Derating curve. 



IOO 

s 

> 

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I 

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O 

5 

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NUMKR OF THERMAL CYCLES (IN THOUSANDS) (K( . IUTam 

Fig. 4 — Thermal-cycling rating chart. 



1'. 














































| 


















i = 


^0 
















je 


lif' 












B * 

! i0' 

o * 

2 
S 1 





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&* 









































































































































•ST 1 " ' "- ' 4 •*-» * 

COLLECTOR CURRENT (!<>— A 



Fig. 5 — Typical dc beta characteristics for both types. 



29 
i 

A. 

E K> 

O 

i 

!• 

5 
« 




COLLCCTOH-TO-CIHTTER VOLTMC (¥cc>— « V 
CASE TtMPEftATUftE (T>>*2S*C 
































































































































































































































' 


2 




s • 








B t 








1 • 



COLLECTOR CURRENT (I c ) — A 



•tCS-IHM 



Fig. 6 — Typical transfer characteristics for both types. 



Fig. 7 — Typical input characteristics for both types. Fig. 8 — Typical gain-bandwidth product for both types. 



110. 



POWER TRANSISTORS 



2N3878, 2N3879, 2N5202, 2N6500, 40375 



High-Speed, Epitaxial-Collector 
Silicon N-P-N Transistors 

For High-Speed Switching and Linear-Amplifier. Applications 

RCA-2N3878, 2N3879, 2N5202, and 2N6500* are epitaxial Typical application* for these transistors include: low-distor- 



Features: 

■ Maxlmum-area-of-operetlon curves for dc and pulse operation 

■ Rated for safe operation in both forward- and reverse-Mas conditions 

■ High sustaining voltage 

■ Total saturated transition time less then 1 ia 

for 2N3879, 2N6202, and 2N6500 

TERMINAL DESIGNATIONS 



silicon n-p-n transistors. The 2N3678 is an amplifier type 
intended for audio-, ultrasonic-, and radio-frequency circuits. 
Types 2N3879, 2N5202, and 2N6500 are switching transistors 
intended for use in high-current, high-speed switching circuits. 
Type 40375 is a 2N3878 with a factory-attached heat radiator; 
it is intended for printed circuit-board applications. 



MAXIMUM RATINGS, Absolute-Maximum Values: 

•COLLECTOR-TO-BASE VOLTAGE 

COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: 

With external base-to-emitter resistance (Rgg) =50U. 

With base open 

•EMITTER-TO-BASE VOLTAGE 

•CONTINUOUS COLLECTOR CURRENT .... 

PEAK COLLECTOR CURRENT 

•CONTINUOUS BASE CURRENT 

•TRANSISTOR DISSIPATION 

At case temperature (Tr;) ■ 25°C 

At case temperatures above 25°C 

At ambient temperature (T^) ' 25°C . . . 

For other conditions 

•TEMPERATURE RANGE: 

Storage & operating (Junction) 

•PIN TEMPERATURE: 

1/32 in. (0.8 mm) from seating plane for 10 s max. . 



VCBO 



tion power amplifiers, oscillators, switching regulators, series 
regulators, converters, and inverters. 



* Formerly RCA 0*v. Type Not. TA2509, TA2B09A, TA7286, end 
TA8S32, respectively. 



2N3879 2N5202 2N6600 
120 100 120 



Vcer(sus) 
V C EOl«"«l 
VEBO 

ic 

'CM 
! B 



3S (2N3878I 35 36 

Derate linearly at 0.2 W/°C 
S.8 (40375) 

See Figs. 1,2,3, and 5 

-65 to 200 



In accordance with JEDEC registration data format JS-6 RDF-2 (2N3878): JS-6 RDF-1 (2N3879, 2NS202. 2N6500). 



100 

t 

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CASE TEMPERATURE (T C )»2S*C 
(CURVES MUST BE DERATED LINEARL 
WITH INCREASE IN TEMPERATURE) 


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10 



too 



COLLECTOR-TO-EMITTER VOLTAGE <Vce> — V 



Fig. I - Maximum operating areas for 2N3878. 



4 6 8,000 
92CS-25755 




JEDEC Toee 
2N3878, 2N3S79, 2NS202, 2N«S0O 



JEDECTO-WwKhl 
40376 



(HEAT RAOIATOftl 

































































































KT 


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m^ 


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SMKT1VI CASE TWf OK C»SI TS»P (T, pf 0« T c l— 'C 

Note: Use ambient temperature for derating 40375. 

Fig. 2 - Dissipation derating for all types. 



10a 
T • 

I '•! 

* 6 

■ « 

§ ; 

i : 

2 

aot 






































































































^Vel^ 




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101 



COLLtCTOH-TO-HIITTlR VOLTAOE (VcE' — v 

•tSS-t?T?«I 

Fig. 3 - Maximum operating areas for 40375. 




eASX-TO-CMITTC*. VOLT»0E ( V Bt )— V 

•tcs-isti? 

Fig. 4 - Typical input characteristics 
for all types. 



111 



POWER TRANSISTORS 



2N3878, 2N3879, 2N5202, 2N6500, 40375 

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) • 2S°C unless otherwise specified: 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vde 


CURRENT 
Adc 


2N387S 
4037S 


2N387S 


2NS202 


2NSS0O 


V C E 


VBE 


■c 


>B 


Min. 


Mix. 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


Collector Cutoff Current: 
With base-emitter junction reverse- 
biased 


'CEV 


100 
110 
120 


-1.5 


-1.5 






- 


25 


- 


25 


'- 


10 


- 


5 


mA 


With base-emitter junction 
reverse-biased and Tq = 1 50°C 


100 
110 


-1.5 







- 


4 


- 


4 


- 


10 


~ 


10 


With base open 


'CEO 


40 
70 










- 


5« 


- 


5 






- 


5 


mA 


Emitter Cutoff Current 


'EBO 




-6 

-7 






- 


10 


- 


10 


" 


10 


- 


25 


mA 


Collector-to-Emitter Sustaining 
Voltage 
With base open 


V CE0 (sus) 






0.2 





50a 




75e 




50= 




90 a 




V 


With external base-to-emitter 
resistance (R B e) = 50 !! 


VCER ,SUS ' 






02 





65a 




90" 




75 a 




110= 




DC Forward-Current Transfer 
Ratio 


h FE 


1.2 
2 
2 
2 
5 
5 




4" 

05 b 
3" 
4" 
4" 

0.5" 




40* 

8- 
20 
50* 


200* 
200' 


,12- 
20 
40 


100' 
80 


10' 


100* 


15' 


60' 




Collector-to-Emitter 
' Saturation Voltage 


V CE lsatl 






3" 
4" 


03 
4 




2 




1.2 




1.2 




1.5 


V 


Base to-Emmer Voltage 


V B E 


2 




4b 






25 














V 


Base-to-Emitter Saturation 
Voltage 


V BE lsatl 






3" 
4" 


3 
04 








2 




2 




25 


V 


Collector-to-Base Output 
Capacitance : 
II = 1 MHz, V CB = 10 V) 


c ol) 












176 




175 




175 




175 


,iF 


Second Breakdown Collector Current. 

With base forward-biased and 
1-s nonrepetitive pulse 


'S,b 


40 








750 




500 




400 




400 




mA 


Second-Breakdown Energy: 

With base reverse-biased and 
R BE =50 Si. V BB = -4 V 
At L =50»iH 
At L = 125 uH 


E S/b C 










1 




1 




04 




05 




mj 


Magnitude ol Common Emitter, 
Small-Signal, Short-Circuit, 
Forward-Current Transfer 
Ratio:(f = 10 MHz) 


K| 


10 




05 




4 




4 




6 




6 






Common-Emitter, Small-Signal, 
Short-Circuit, Forward-Current 
Transler Ratio:(l = 1 kHz) 


"fe 


30 




0.1 




40 


















Thermal Resistance: 
Junction-to-case 


R ()JC 










2N3878 
I 5 




5 




5 




5 


°c/w 


Junction-to-ambient 


r 0ja 










40375 
I 30 















* In accordance with JEDEC registration data format JS-6 
(2N3878I; JS-6 RDF-1 (2N3879, 2N5202. 2N6S00).. 

8 CAUTION: Sustaining voltages Vceo' sus ' snd V CER<I* U *) 
NOT be measured on a curve tracer. 



RDF-2 b Pulsed, pulse duration - 300 us, duty factor < 2 %. 

Es/b is defined as the energy at which second breakdown occurs 
under specified reverse-bias conditions. Es/b " 1/2L|2 where L is a 
series load or leakage inductance and I is the peak collector current. 



112 



TRANSITION AND STORAGE-TIME CHARACTERISTICS FOR SWITCHING TYPES, At Case Temperature (T c ) ~ 2SPC: 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N 


1879 


2N 


5202 


2N4 


1600 


V CC 


'C 


IB 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


Saturated Switching 
Time 
Delay time 


*d 


30 
30 
30 


3 

4 
4 


0.3" 
0.4" 
0.8 a 


: 


40 


- 


40 


1 


40 


ns 


Rise time 


■r 


30 
30 
30 


3 
4 
4 


0.3* 
0.4 a 
0.8 a 


" 


400 


- 


400 


- 


400 


Storage time 


l s 


30 
30 
30 


3 

4 
4 


0.3» 
0.4 a 
0.8 s 


" 


800 


- 


1200 


- 


1000 


Fall time 


•f 


30 
30 
30 


3 
4 

4 


0.3 s 
0.4* 
0.8 a 


- 


400 


- 


400 


- 


500 



In accordance with JEDEC registration data format [JS-6, ROF-1) 



'B, " '8 2 



POWER TRANSISTORS 



2N3878, 2N3879, 2N5202, 2N6500, 40375 




« 6 e | z 4 e s | 00 

COLLECTOR-TO-EMITTER VOLTAGE! VcE>— V 

92CS-23756 

Fig. 5 - Maximum operating areas for 2N3879, 2N5202, and 2N6500. 



COLLECTOR-TO-EMITTER VOLTAGE (V CE ) ■ 10 V 
CASE TEMPERATURE (T c ) - 25'C 














» 100 
h 80 

3 

£ 60 
1 40 
% 20 














































































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\ 

































































































































































COLLECTOR CURRENT (!<;)- 



Fig. 6- Typical gain-bandwidth product 
for all types. 



_ l75 

- 150 

£ '" 
3 ioo 

5 75 

o s0 

o « 

° 


COLLECTOR 


TO-E 


" 


TER V 


,. 


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— L 


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t- 


CASE TEMPERAT 


JR 


E(T C I 


■25'C 






— 


-, 


\ 
















1 








\ 












-55°C 










^ 




















i 



COLLECTOR CURRENT del— A 



Fig. 7 - Typical dc beta characteristics for 
2N6500. 













































































1, 

I 

I * 

g 2 








vvL* 












£M 


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| | | [| 1,1 1., 










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BASE-TO-EMITTER VOLTAGE (V^)— V 

F/y. S- Typical transfer characteristics 
for all types. 



CASE TEMPERAT 

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si "111: 

S* 11 


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COLLECTORCURRENT(Ic)-A 92CS-I32M 

Fig. II - Typical saturation-voltage 
characteristics for 2 N 3878, 
and 2N3879. 




COLLECTOR-TO-EMITTER VOLTAGE IV C E 



Fig. 9 - Typical output characteristics for 
2N3878, 2N3879, 2N5202and 
40375. 





Fig. 10 - Typical output characteristics for 
2N6500. 



1 25 

i 

It 2 

1 o. 


CAS 


E T 


EMP 


RA1 


URE 


Tel 


■25 


•cttttjIIIIIIIIIIIIH 








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F/'ff. /2 - Typical saturation-voltage 
characteristics for 2N5202. 



COLLECTOR CURRENT del — A 

Fig. 13 - Typical saturation-voltage 
characteristics for 2N6500. 



113 



POWER TRANSISTORS . 



2N3878, 2N3879, 2N5202, 2N6500, 4305 




COLLECTOR CURRENT del—* 

92CS-I32 

Fig. 14 - Typical turn-on time for 
2 N 387 9, 2N5202. and 
2N6500. 



m\7oammi m . 


IOOOPULKS/1 




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CAIC TEMHRATURE tTe) ■ «»*c 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 II 1 1 1 1 1 1 1 1 


t 








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■■■•■• 









COLLECTOR CURRENT <I C ) — A MCS-i 

Fig. 15 - Typical storage time for 
2N3879, 2N5202, and 
2N6S00. 



COLLECTOR CURRENT (Irl— A 



Fig. 16 - Typical fall time for 2N3879, 
2N5202, and 2 N 65 00. 



114. 



POWER TRANSISTORS 



2N4036, 2N4037, 2N4314, 40391, 40394, 41503 



Medium-Power Silicon P-N-P Planar Transistors 



General-Purpose Types for Industrial and Commercial Applications 



These RCA types are double-diffused, 
epitaxial-planar, silicon p-n-p transistors; 
they differ in breakdown-voltage ratings, 
leakage-current, and saturation character- 
istics. 

The 2N4036, 2N4037, 2N4314, 40391, 
and 40394 transistors are intended for a 
wide variety of small-signal medium-power 
applications. With a minimum gain-band- 
width product (fj) of 60 MHz, these 
devices provide useful gain at high fre- 
quencies. In addition, the 2N4036 is use- 
ful in high-speed saturated switching ap- 
plications. 

MAXIMUM RATINGS, Absolute Maximum Values: 



Type 41503 is suitable for low-power, 
low-cost industrial and audio uses, and 
may be employed as the p-n-p comple- 
ment to RCA n-p-n type 41502. 



Types 2N4036, 2N4037, 2N4314, and 
41503 are supplied in the JEDEC TO- 39 
hermetic package. The 40391 is a 2N4037 
with a factory attached heat radiator, 
intended for printed-circuit-board appli- 
cations. Type 40394 is a 2N4037 with a 
factory-attached diamond-shaped mount- 
ing flange. 



2N4036 

-90 



2N4037 
40391. 40394 



2N4314 41B03 



•COLLECTOR-TO-BASE VOLTAGE V CB0 

COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: 

With 1.5 volts (V BE I of reverse bias. V CEV (sus) -85 

With external base-to-emitter resistance 

(R BE X200n V CER (sus) -85 

* With base open V q E q(sus) -65 

*EMITTER-TO-BASE VOLTAGE V EB0 -7 

'COLLECTOR CURRENT I c -1.0 

•BASE CURRENT I B -0.5 

•TRANSISTOR DISSIPATION: P T 

At case temperatures up to 25°C 7 



At free-air temperatures up to 25°C 



At temperatures above 25°C 

'TEMPERATURE RANGE: 

Storage & Operating (Junction I 

•LEAD TEMPERATURE (During soldering): 

At distance > 1/16 in. (1.58 mm) 

from seating plane for 10 s max 



-1.0 


-1.0 


-0.5 


-0.5 


7(2N4037) 


7 


7(40394) 


- 


3.5(40391) 


1 


1 (2N4037, 40394) 


- 


— Derate linearly to 


200°C- 



Features: 

2N4036? are p-n-p \2N2102 
2N40371 complements of [2N3053 

■ Gain-bandwidth product 

(f T ) = 60 MHz min. 

■ High breakdown voltages 

■ Maximum-area-of-operation curves 

■ Planar construction provides low 
noise and low leakage 

■ Low saturation voltages 

■ High pulsed beta at high collector 
current 

■ Fast switching (2N4036) 

TERMINAL DESIGNATIONS 



JEDEC TO-39 
2N4036, 2N4037 
2N4314, 41503 



lith JEDEC registration data format IJS-6 RDF-1 2N4036: JS-9 RDF-2 2N4037, 2N4314I. 




JEDEC TO-39 with Flange 
40394 



(HEAT RADIATOR) 



B JEDEC TO-39 with Heat Radiator 
40391 



COLLECTOR-TO-EMITTER VOLTAGE (Vfc-)"-2 V 
AMBIENT TEMPERATURE IT 4 I-2VC ^ 










SO 
£| 6 

n 

gElO 












































































2 


N40 


6 






















V" 


OS 


7, 


2N43 






* 


V 
































> 


\ 






























\ 






























\ 


V 






























\\ 






























V 





COLLECTOR CURRENT (Ic)-mA 



Fig. 1— Typical dc-beta characteristics for 
2N4036, 2N4037and2N4314. 



COLLECTOR-TO-EMITTER VOLTAGE (Vr_)--IOV 
AMBIENT TEMPERATURE (T A 1 * 23*C ^ 












80 

jjjfreo 

5« 4 ° 
gf20 

9 














































































































































































































































































\ 


































\ 





COLLECTOR CURRENT (Zc>-mA 

Fig.2— Typical dc-beta characteristic for 
41503. 



— I20 

* IOO 

a; 

* an 
S 60 

Y 40 

* 

o 20 

* O 


COLLECTOR- 


ro- EMITTER 


VOLTAGE tW 


.-io 


v 
















I 


l. r 






. — « 


















> 










N 










** 


.> 
















\ 






^S 




















\ 


















fct 


a'- 


S'C 




\ 
















tF* 


— * 








<g! 










„\ 


^ 














■\ 






►JJ 




















\ 




















S"C 






1 


















,* 








t 


























\ 


























V\ 






























\ 



Fig.3— Typical dc beta characteristics 
for 2N4037 and 2N4314. 



115 



POWER TRANSISTORS 



2N4036, 2N4037, 2N4314, 40391, 40394, 41503 

ELECTRICAL CHARACTERISTICS, at Case Temperature (T c ) • 25°C Unless Otherwise Specified 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 




VOLTAGE 
V dc 


CUR- 
RENT 
mA dc 


2N4036 


2N4037 

40391 

40394 


2N4314 


41503 


UNITS 


V C B 


V C E 


^E 


'C 


MIN. 


MAX 


MIN. 


MAX. 


MIN. 


MAX 


MIN. 


MAX 


Collector Cutoff Current: 
With emitter open 


'CBO 


-15 
-90 
-60 










-0.1» 
-0B2 




-0.25* 




-026* 




-2 


MA 

"ViA 

/JA 


With base open 


'CEO 




-30 






- 


-05* 


- 


-5* 


- 


-5» 


- 


- 


MA 


With base-emitter junction 
reverse biased 


'CEX 




-85 


1.5 






-100* 














mA 


T c = 150°C 




-30 


1.5 




- 


-0.1* 


- 


- 


- 


- 


_ 


- 


Emitter Cutoff Current 


'ebo 






7 
5 






_ 


-0.1* 
-0.02 


- 


-1* 


- 


-r» 


- 


- 


mA 
MA 


Collector- to- Base Breakdown * 
Voltage (l E -0) 


v (BR)CBO 








-a- 1 


-90 


- 


-60* 


- 


-90* 


- 


" 


- 


V 


Emitter-to-Base Breakdown 
Voltage (l E - -0.1mA) 


v (BR)EBO 











-7 


- 


-7 


- 


-7 


- 


-4 


- 


V 


Collector-to-Emitter 
Sustaining Voltage: 

With base-emitter junction 
reverse biased 


V CEV (sus) 






1.5 


-100 


-85' 


- 


-60" 


- 


-85' 


- 


- 


- 


V 


With external base-to- 
emitter resistance 
<R BE )< 200ft 


V CER (sus) 








-100 


-85* 




-60" 




-85* 








V 


» With base open 


v CEO <su »> 








-30 
-100 


-65" 


- 


-40* 


- 


-65* 


- 


-30* 


- 


V 


> Collector-to-Emitter 
Voltage (l B - -15 mA) 


V C E(»t) 








-150 


- 


-0.65 


- 


-1.4 


- 


-1.4 


- 


-1.5 


V 


Base-to-Emitter Voltage 


V B E 




-10 




-150 


- 


-1.1 


- 


-1J5» 


- 


-1.5* 


- 


-2.5 


V 


Base-to-Emitter 

Voltage (l B --15mA) 


V BE (sat) 








-150 


_ 


-1.4 


_ 


_ 


_ 








V 


DC Forward-Current 
Transfer Ratio 


"FE 




-2 

-10 
-10 
-10 
-10 




-150 
-0.1 
-1.0 
-150" 
-500" 


20 
20 

40 
20 


200 
140 


15 
50 


250 


15 
50 


250 


20 


- 




Common-Emitter, Small-Signal 
Short-Circuit, Forward- 
Current Transfer Ratio 
(at f ' 20 MHz) 


h fe 




-10 




-50 


3 


- 


3 


- 


3 


- 


- 


- 




Magnitude of Common-Emitter, 
Small-Signal, Short-Circuit, 
Forward-Current Transfer 
Ratio (at f - 20 MHz) 


| n fe 




-10 




-50 


3 


- 


3 


10 


3 


10 


- 


- 




Col lector- Base Capacitance 
(atf=1MHz, l E = OI 


Ccb 


-10 








- 


30 


- 


30* 


- 


30* 


- 


30 


PF 


Input Capacitance 


Cib 






0.5 





_ 


90 


_ 


90 


_ 


90 


_ 


90 


PF 


Sat. Switching Time* 
Rise time 
Storage time 
Fall time 
Turn-on time 
Turn-off time 


«r 

«s 

«f 

'on 

'off 




-30 
-30 
-30 
-30 
-30 




-150 
-150 
-150 
-150 
-150 


- 


70 
600 
100 
110 
700 


- 


- 


- 


- 


- 


- 


i?s 


Thermal Resistance: 
Junction-to-Case 


R 0JC 










- 


25* 


25 (max.) 
2N4037 & 
40394 


- 


25 


- 


25 


°C/W 


Junction-to-Ambient 


R 9JA 










- 


165 


165 (max.) 

2N4037 

40394 


- 165 


- 


165 


50 (max.) 
40391 


- 


- 



•CAUTION: The sustaining voltages V CEQ (sus), V CER (sus), and 
b Pulsed, pulse duration « 300 its. duty factor < 2%, 
•in accordance with JEDEC registration data format (JS-6 RDF-1 
C| B1 "'B2* 1 5 m A 



V CEV' $US ' MUST NOTbe measured on a curve tracer. 



2N4036; JS-9 RDF-2 2N4037. 2N4314). 



< 

~ t 

a 10 '- 
£ IO 

o I0 3 

3 io 5h 
io 6 


: 


COLLECTOR- 


TO-BASE VOLTAGE (V CB I — 60 V 


••-'40 V 


: 










^-20V 


: 








^\ 




: 
























: 












: 




/# 



























Fig.4— Typical collector-cutoff current vs. 
junction temperature for 2N4036. 



COLLECTOR- 


TO-EMITTER VOLTAGE (V cc ). 


10 V 








FREQUENCY • ZO MHz 

AMBIENT TEMPERATURE (T A )"25"C 








2 6 
|/ 
II 4 

i 

s 

9 




















































































































































































in 














• . 



COLLECTOR CURRENT (I c )- mA 

92LS -1257 

Fig. 5— Typical small-signal beta charac- 
teristics for all types. 



-eon 

-500 

E 
1 














































8 


ASE 


CUR 


REN 


(I B I ~ 


























^ 


'•y 




*r' 


S 


















„«• 


*y 




«,< 












£-x>o 

O-200 
§-100 








*\f 


■ i ,•> 


■' 




















^/ 




















































♦Vl 




'' 


















:h; 






/' 




















*} 


"'< 




















* 






































































:::: 






























w. 




:::: 


:::: 


















:::: 





-1.0 -2.0 -3.0 -4.0 -5.0 -6.0 

COLLECTOR-TO-EMITTER SATURATION VOLTAGE, V CE (>0I)-V 



Fig.6— Typical saturation-voltage charac- 
teristics for 2N4036. 



AMBIENT TEMPERATURE <T A )-2! 
UNLESS OTHERWISE SPECIFIED 


•c 
















-50O 
f -400 
5 -300 






1 ! 1 




















; ' ! i 
























H?i« 






















£ 


thn 




^? r "i 






$/ 










/// t'/ / 


















i- 


if 


1 1 §[ 






























I *8 


t 


[i #/ 




J i 


. , — 




— 


i - |o ° 


' , i // 


'/:'/.'" 




. 


Jr\ yyr/ 


t\ TUT 



BASE-TO-EMITTER VOLTAGE (VegJ-V 

Fig. 7— Typical transfer characteristics 
for 2N4037 and 2N4314. 



116 



POWER TRANSISTORS 



2N4036, 2N4037, 2N4314, 40391, 40394, 41503 




-10 -30 "" " -100 

COLLECTOR-TO-EMITTER VOLTAGE <V C E> — V 

Fig.8— Maximum operating areas for 41503. 



'CS-24056 



CASE TEMPERATURE (T c )= 25° C 
(CURVES MUST BE DERATED LINEARLY 
WITH INCREASE IN TEMPERATURE) 



NORMALIZED! 

POWER -, 

MULTIPLIER J 

|50 M s 




-I c °-IO * • 6 b -IOO 

COLLECTOR-TO-EMITTER VOLTAGE (V CE ) — V 92CS-I7443 
Fig.9-Maximum operating areas for 2N4036, 2N4037, and 2N4314. 

































AMBIENT TEMPERATURE <T A ) -25'C 
















-aoo 

f -«00 

I" 300 

D 

g -200 

^ -I0O 








































































L#** 






















































































■** i r- 












" 5 in 




































-4 


























-3 


































































"•" 


1 
















Mll 




.... 


BASE CURRENT 1 1 ,).- 1 «iA 


















\ I I 

















COLLECTOR-TO-EMITTER VOLTAGE <V CE I-V 

92LS-I2 

Fig. 10— Typical large-signal output 
characteristics for 2N4037, 
2N4314. 40391, and 40394. 




-04 -OS -1.2 H.6 -2.0 

COLLECTOR-TO-EMITTER VOLTAGE (V CE I-V 



Fig. 1 1 —Typical small-signal output 
characteristics for 2N4037, 
2N4314, 40391, and 40394. 























AMBIENT TEMPERATURE (T»|.25'C 








1,000 


























































1 












" 100 

X 4 

* 

IS 








- 


JA 


^ 


''•j 
























































t1 






































^^ 


L. 1 























COLLECTOR CURRENT (I c )-nA 

Fig. 12— Typical saturated switching times 
for 2N4036. 



117 



POWER TRANSISTORS 



2N4231A, 2N4232A, 2N4233A, 2N6312, 2N6313, 2N6314 
Silicon N-P-N and P-N-P Medium-Power Transistors 



General-Purpose Types for Switching Applications 



RCA-2N4231A, 2N4232A, and 2N4233A 
are multiple-epitaxial n-p-n transistors. The 
RCA-2N6312, 2N6313, and 2N6314 are 
multiple-epitaxial p-n-p transistors. They are 



complements to 2N4231A, 2N4232A, and 
2N4233A. These types are supplied in steel 
JEDEC TO-213MA hermetic packages. 



MAXIMUM RATINGS, Absolute-Maximum Values: 

N-P-N 2N4231A 2N4232A 2N4233A 
P-N-P 2N6312* 2N6313* 2N6314* 

* V CBO 40 60 80 

V CEO (sus) 40 60 80 

* V EBO 5 5 5 

* l c (2N4231A, 2N4232A, 2N4233A) . . . . 3 

(2N6312, 2N6313, 2N6314) 5 

* 'CM (Registered for 2N6312, 13, 14 only) . . 10 

* l B (2N4231A.2N4233A, 2N4233A) . . . . 1 - 

I2N6312, 2N6313, 2N6314) 2 

* P T T C <25°C 75 

T C >25°C derate linearly 0.43 

* Tj,T st (2N4231A, 2N4232A, 2N4233A) . . -55 to 200 

(2N6312, 2N6313, 2N6314) ...... -65 to 200 

* T L (2N6312, 2N6313, 2N6314only) 

At distances > 1 /32 in. (0.8 mm) from 

seating plane for 10 s max 235 

* In accordance with JEDEC registration data. 

* For p-n-p devices, voltage and current values are negative. 



CASE TEMPERATURE(T C )-25*C 
(CURVES MUST BE DERATED 

LINEARLY WITH INCREASE 

IN TEMPERATURE) 




A 
A 
A 

W 

W/°C 

°C 

°C 



COLLECTOR-TO-EMITTER V0LTAGE(V rF )- V 



92CM-30378 
Fig. 1 — Maximum operating areas for all types.* 



Features: 

■ 2N4231A-2N4233A complements of 
2N6312-2N6314 

■ Low saturation voltages 

■ Maximum-safe-area-of-operation curves 

■ Thermal-cycle ratings 

■ High gain at high current 

TERMINAL DESIGNATIONS 




JEDEC TO-213MA 

























1 B 

It 

I ' 

,0- 






























































V 

i w 


^ 
Ns> 


^! 


*» 


•*»- 










'e 1 n» 




^ 








□^^_ 


10 








1 


1 

i6» 






• 


ii« 



NUMBER OF THERMAL CYCLE* Me»-»4W 

Fig. 2 — Thermal-cycling rating chart for all types. 



SB0 

s 

1 

5 ioo 

z * 

I . 

Z 

i * 

e 


c 


DLL 


EC! 


OR- T0- 


EMITTER 


VOLT 


USE 


(V 


CE»- 4V 








































s^ 






















N *- 














<•%> 


















fi^' 






















"~"^» 






































2 


« 






■ 




4 


8 



0.1 



COLLECTOR CURRENT ( I c )-A 



92C3-JOST* 

Fig. 3 — Typical dc beta characteristics for 

2N4231A. 2N4232A, and 2N4233A. 



♦ For p-n-p devices, voltage and current values are negative. 



118 



POWER TRANSISTORS 



2N4231A, 2N4232A, 2N4233A, 2N6312, 2N6313, 2N6314 



ELECTRICAL CHARACTERISTICS, At Case Temperature (T c ) - 2S°C 

unless otherwise specified 








CHARACTERISTIC 


TEST CONDITIONS* 


LIMITS 


U 
N 
1 

T 
S 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N4231A 
2N63124 


2N4232A 
2N63134 


2N4233A 
2N6314* 


V C E 


VBE 


■c 


"B 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


'CBO 


40» 
60» 
80« 








- 


50 


- 


50 


- 


50 


JUA 


'CEX 

r be = ioon 


40 
60 
80 


-1.5 
-1.5 
-1.5 






- 


100 


— 


100 


- 


100 


R BE =100J2, 
T c = 150°C 


40 
60 
80 


-1.5 
-1.5 
-1.5 






— 


1 


— 


1 


— 


1 


mA 


■ceo 


30 
50 
70 











- 


1 


- 


1 


- 


1 


'ebo 




-5 






- 


0.5 


- 


0.5 


- 


0.5 


hFE 
2N4231A.2N4232A, 
2N4233A 


2 
2 
2 




3«> 
1.5C 
0.5C 




10 
25 
40 


100 


10 
25 
40 


100 


10 
25 
40 


100 




2N6312,2N6313, 
2N6314 


4 
4 
4 
4 




5C 

3c 

1.5C 

0.5C 




4 
10 
25 
40 


100 


4 
10 
25 
40 


100 


4 
10 
25 
40 


100 


V B E 
2N4231A, 2N4232A, 

2N4233A 
2N6312, 2N6313, 

2N6314 


2 

4 




1.5C 
1.5C 




- 


1.4 
1.4 


- 


1.4 
1.4 


- 


1.4 
1.4 


V 


VcE(sat) 
2N4231A, 2N4232A, 
2N4233A 






3C 

1.5C 


0.3 
0.15 


- 


2 

0.7 


- 


2 

0.7 


- 


2 
0.7 


2N6312, 2N6313, 
2N6314 






5C 
3C 

1.5C 


1.25 

0.3 

0.15 


; 


4 

2 

0.7 


- 


4 

2 

0.7 


- 


4 

2 

0.7 


VcEO<sus)b 






0.1C 





40 


- 


60 


- 


80 


- 


Ihfel f=1 MHz 


10 




0.5 




4 


- 


4 


- 


4 


- 




hfe f=1 kHz 


10 




0.5 




20 


- 


20 


- 


20 


- 




n 


10 




0.5 




4 


- 


4 


- 


4 


- 


MHz 


Cobo f = 0.1 MHz 
2N4231A,2N4233A, 

2N4233A 
2N6312, 2N6313. 

2N6314 


10" 
10« 








- 


200 
300 


- 


200 
300 


- 


200 
300 


pF 


R 0JC 










- 


2.3 


- 


2.3 


- 


2.3 


°C/W 



* In accordance with JEDEC registration data format. 

♦ For p-n-p devices, voltage and current values are negative. 

• Vqb value. 

b CAUTION: Sustaining voltages Vceo< su$ ' MUST NOT be measured 

c Pulsed, pulse duration « 300 ms, duty factor = 1 .8%. 



on a curve tracer. 




Fig. 4 



4 s 
-01 -I 

COLLECTOR CURRENT (I c )-/k HCI-KMO 

Typical dc beta characteristics for 
2N6312, 2N6313,and2N6314. 



f" 


COLLCCTOM-TO 


•UMTTBt VDLTAkK (Vfc|)i 


4V 




























l: 

z 

3 « 

2 




















































































































































































































































































A 










4 


1 






2 




t 


■ 



COLLECTOR CURRENT 1I C I— A 

•KS-K474 

Fig. S — Typical gain-bandwidth product for 
all types.* 




100 

92CS-SOMI 



REVERSE VOLTAGE <V R I-V 

Fig. 6 — Typical common-base input or output 
capacitance characteristics as a function 
of reverse voltage for all types.* 



14 
12 

[ 

|0. 

2 
5 OS 

8 04 

02 


ttrl- 


T : 






CC 




LLECTOR SUPPLYV0LTAGE(V cc > 


■ 30V 






XQ 




r'afie' 10 












































































S 


s 


































-W» 










»*•'• 




& 




li? 


i»-°*l 














































-+P 


--rrrr 


4-rH-- 


--ft 


firm 




-± 




::±: 



COLLECTOR CURRENT U c I— A 9tC<-t4»tS 

Fig. 7 — Typical saturated switching characteristics 
for 2N4231A. 2N4232A. and 2N4233A. 

♦For p-n-p devices, voltage and current values are negative. 



119 



POWER TRANSISTORS 



2N4231A, 2N4232A, 2N4233A, 2N6312, 2N6313, 2N6314 



























TEMPERATURE <T C |.25'C 
B2-IC» 






















I 2 -H 








+ :: ?»!■ 












































3 








i-P« 
















■h£r&;+ 














TJTtmL'S 




z 06-; 








t ;! ttH 
















ftj*gj| 






















T ME WOM) - ± 


2-- 








-TURN- "P. 



































COLLECTOR CURRENT He! — A 9B.S-55WR2 

F/'g'. 8 — Typical saturated switching characteristics 
for 2N6312, 2N6313. and 2N6314. 



i 

£ 200 
w 

t 

3 ISO 

Si 

S 100 


COLLECTOR-TO-EMITTCR VOLTAM Wct>'4 vffl | | | | | 1 1 1 ft 




+H 1 1 Mm 

±s 1I1HIIIII1 llllllllllff 

m i 








kiiTimiiiiiiiiiiriiiiiiiiii 


»/uf 


TT^/W/ HtTT 



BASE- TO- EMITTER VOLTAGE IV BE I-V 

HLS-353 

Fig. 9 — Typical input characteristics for 
all types.* 




COLLECTOR -TO-EMITTER VOLTAOE (VCE> — V 

tfLS-9927m 

Fig. 10 — Typical output characteristics^ 'or 
all types.* 



I 

o « 

1 5 

$ 2 


COLLECTOR-TC 


-EMI' 


TER VO 


-TAOIIV 


J)- 4V 














































T*"' 












: ^1 


























-J -t-J 




































TTTTTT" 










4. t/+ 










j lA 


Ttf 































BASE-TO-EMITTER VOLTAGE (V BE ) — V 

Fig. 11 — Typical transfer characteristics for 
all types. ♦ 

♦ For p-n-p devices, voltage and current values are negative. 



120 



POWER TRANSISTORS 



2N4904, 2N4905, 2N4906 
Silicon P-N-P Epitaxial-Base High-Power Transistors 



Rugged, Broadly Applicable Devices 
For Industrial and Commercial Use 

The RCA-2N4904, 2N4905 and 2N4906 are 
epitaxial-base silicon p-n-p transistors fea- 
turing high-gain at high current. They may 
be used as complements to the 2N4913, 
2N4914 and 2N4915 n-p-n types, respec- 
tively. These devices are intended for medium- 
speed switching and amplifier applications 



and feature a dissipation capability of 87.5 
watts at case temperatures up to 25°C. 

They differ in voltage ratings and in the 
currents at which the parameters are con- 
trolled. All are supplied in the steel JEDEC 
TO-204MA hermetic package. 



MAXIMUM RATINGS, Absolute-Maximum Values 

* V CEO 

* V CBO 

* V EBO 

•'c 

*'B 

AtT c <25°C 87.5 

At T c > 25°C derate linearly 

'Tj.TVtg 

*T L at 1/16 ± 1/32 in. (1.58 ± 0.8 mm) 

from case for 10 s 

* In accordance with JEDEC registration data. 



2N4904 


2N4905 


2N4906 




-40 


-60 


-80 


V 


-40 


-60 


-80 


V 


-5 


-5 


-5 


V 


-5 


-5 


-5 


A 


-1 


-1 


-1 


A 


87.5 


87.5 


87.5 


W 




ns 




_ w/°c 




-65 to 200 _ 

. ?3R . . . 




_ °c 




_ °c 



Features: 

■ High dissipation capability 

■ Low saturation voltages 

■ Maximum safe-area-of-operation curves 

■ Hermetically sealed JEDEC TO-3/TO-204MA 
package 

■ High gain at high current 

■ Thermal-cycling rating curve 



Applications: 

■ Series and shunt regulators 

■ High-fidelity amplifiers 

■ Power-switching circuits 

■ Solenoid drivers 

TERMINAL DESIGNATIONS 




JEDEC TO-204MA 



10 . 

6 

< 4 

J_ 

5 

£ i- 

o e 

C 6 

o 

U 2 
CI 














^s 


A 














N 


^r 


















r ' 


K~ 














\° 
































V 


















is 


s\ 




















nS 




















V 














2N4904 -«■ 
2N4903 








AMBIED 


T TEMP 


:rat 


IRE 


(T 


2N< 

Cl-25'C 

' 

















COLLECTOR EMITTER VOLTAGE (Vcjl-V 92cs _5 | 76 

Fig. 1 — Maximum operating areas for all types. 



25 
i" 

5 >s 

D 
O 

a. 

f 10 

* 

< 

" 5 

Z 

< 




COLLECTOR-TO-EMITTER VOLTASE (VceI—4 V 
CASE TEMPERATURE (Tr.l'23'C 



































































































































































































































































COLLECTOR CURRENT II C I — A 

92CS-I9 

Fig. 3— Typical gain-bandwidth product 
for all types. 



2 

s 

§400 
§200 

£ 100 

so 
K 60 
o 

A 40 

1 20 
10 


CQLL1CMR-TC-EMITTER 
VOtTMC (Vce) --4V 






































-c III 
























TCMF 


CRATURi 


^ 


S»V 








































2B-C 


























































-40«C 




















































































































1 










• 


1 








I 





-0.01 -O.I -I -l( 

COLLECTOR CURRENT dc)-A 

92CS-I80O9 

Fig. 4 — Typical dc beta characteristics 
for all types. 



100 
> 

i 

Z 4 

g 

5 

8 2 

» 

O 

10 


































v \ 














s * 


^o 










8 

< 

z 




^ 












% 






\\ 




\ 


M 


j \ — 












114A0J 


V 


V 


< t 



NUMBER OF THERMAL CYCLES (IN THOUSANDS) 



92CS-I9570M 



Fig. 2 — Thermal-cycling rating chart. 




BASE-TO-EMITTER VOLTAGE (V BE )— V 



92CS-I9579 



Fig. 5 — Typical transfer characteristics 
for all types. 



121 



POWER TRANSISTORS 



2N4904, 2N4905, 2N4906 



ELECTRICAL CHARACTERISTICS, At Case Temperature T c - 25°C 
Unlets Otherwise Specified 



CHARAC- 
TERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


Voltage 
Vdc 


Current 
Adc 


2N4904 


2N4905 


2N4906 


V C E 


v B e 


'c 


>B 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


'CEX 


-40 
-60 
-80 


1.5 
.1.5 
1.5 


= 






-0.1 




-0.1 




-0.1 


mA 


T C =150°C 


-4p 
-60 
-80 


1.5 
1.5 
1.5 








-2 




-2 






'CEO 


-40 
-60 
-80 


- 


- 







- 


^1 


- 


-1 


- 


-1 


mA 


'CBO 
l E -0 


40c 
60° 
80C 


- 


- 


- 


- 




- 


-0.1 


- 




mA 


■ebo 


- 


5 









-1 




-1 




-1 


mA 


V CE0 (sus)b 


- 


- 


-0.2 





-40 


- 


-60 


- 


-80 


- 


V 


h FE a 


-2 
-2 


— 


-2.5 

-5 


— 


55 

7 


166 


25 
7 


166 


25 
7 


100 




VBE a 


-2 


- 


-2.5 


- 


- 


-1.4 


- 


-1.4 


- 


-1.4 


V 


V CE (sat) a 


— 


— 


-2.5 
-5 


-0.25 

-1 


: 


-1 

-1.5 


_ 


-1 

-1.5 


_ 


-1 
-1.5 


V 


fT f-1 MHz 


-10 


- 


-1 


- 


4 


- 


4 


- 


4 


- 


MHz 


hf e f=1 kHz 


-10 


- 


-0.5 


-- 


40 


- 


40 


- 


40 


- 




R 0JC 


- 


- 


- 


- 


- 


2 


— 


2 


— 


2 


U C/W 



* In accordance with JEDEC registration data. 

a Pulsed; pulse duration - 300 i*. duty factor - 2%. 

b CAUTION: Sustaining voltage, V CE0 (sus), MUST NOT tie measured on a curve tracer. 



'CB- 



-eoo 
-900 


COUXCTOH-TO-tMTTIR VOLTMi (Vfcf)--4V gj 








I" 400 

a 

a 








S" 300 








s 








g-200 


1 1 lUJ^J^^^^M 






-no 


^^^P^^^^ 









S -0.75 -to HiS -15 







17.5 

i * 

"B.5 
S 


CASE TEMPEAATU« (T e )^25'C | | | | | | | | | | | | | | | | | | | | | |fr 




ti Li r"" Hi Httt" 

w>H»m sop 

*«1I4I llll*oo 1 1 1 llll 11 1 II II II 1 1 III! 1 III II 1 II 1 1 1 1 

pflr i»°o ' ' '' 1 1 1 1 1 1 1 1 1 1 1 r ii 1 1 n 1 1 1 1 n 1 1 1 1 1 






2.5 


IT111 1 1 |ili|"Hi1**" /- ''** r *'' r Vi> 


.100 l»A 1 1 1 1 1 1 1 1^ 


Till 1 M 111 ftTH? i 1 1 1 1 1 1 1 1 1 1 1 1 11 1 1 1 1 1 1 


ti 1 1 1I IIH [II nTTmmnm , TTn 





Fig. 6 — Typical Input characteristics 
for all ty pas. 



10 20 50 40 50 60 70 SO SO 100 
COLLECTOR-TO-EMITTER V0LTA8E (V ce )-V 

92C5-2»00« 

Fig. 7 — Typical output characteristics 
for all types. 



122 



POWER TRANSISTORS 



2N4913, 2N4914, 2N4915 



Silicon N-P-N Epitaxial-Base High-Power Transistors 



Rugged, Broadly Applicable Devices 
For Industrial and Commercial Use 

The RCA-2N4913, 2N4914, and 2N4915 
are epitaxial-base silicon n-p-n transistors 
featuring high-gain at high current. They 
may be used as complements to the 2IM4904, 
2N4905, and 2N4906 p-n-p types respec- 
tively. These devices are intended for medi- 
um-speed switching and feature a dissipation 



capability of 87.5 watts at case temperature 
up to 25°C. 

They differ in voltage ratings and in the 
currents at which the parameters are con- 
trolled. All are supplied in the steel JEDEC 
TO-204MA hermetic package. 



MAXIMUM RATINGS, Absolute-Maximum Values: 2N4913 

* V CE0 40 

* V CB0 . . . 40 

* V EBO 5 

* 'c- ■ 5 

* 'b- • 1 

* PT ^ o 

AtT r <25C 87.5 

^ o 

At Tq >25 C derate linearly 

* T L 

At 1/16 in. ±1/32 in. (1.58 mm 0.8 mm) 

from case for 1 $ 

* T J- T na • 

* In accordance with JEDEC registration data. 



2N4914 
60 
60 

5 

5 

1 

87.5 
— 0.5 — 



2N4915 
80 
80 

5 

5 

1 

87.5 



io 

e 

< 
r 
















■v 


P 
















\ 














V* > 
















\ 
















\N?* 




















> 


^ 




I'. 

8 « 

V- 

0.1 
















\ 






















V 














LIMIT FOR 




N 














2N 
2N 


4914 














AMBIE 


IT TEMP 


ERAT 


URI 


(T 


C )-25'C 












< 




) 








e 







COLLECTOR EMITTER VOLTAGE (V CE )-V 

Fig. 1 — Maximum operating areas for all types. 



V 
V 
V 
A 
A 

W 
W/°C 



Features: 

■ High dissipation capability 

■ Low saturation voltages 

■ Maximum safe-areas-of -operation curves 

■ Hermetically sealed JEDEC TO-3/TO-204MA 
package 

■ High gain at high current 

■ Thermal-cycling rating curve 

Applications: 

■ Series and shunt regulators 

■ High-fidelity amplifiers 

■ Power-switching circuits 

■ Solenoid drivers 



TERMINAL DESIGNATIONS 




JEDEC TO-204MA 



92CS-30I77 



100 

I • 

o 4 

5 

ft. 

5 

S 2 
* 

O 

10 




















V* 








I 
I 




n 






% 




\\\ 




\ 


&. 

yj 


1 > 










h 


YF 


V 





NUMBER OF THERMAL CYCLES (IN THOUSANDS) 



MCS-I99T0M 



Fig. 2 — Thermal-cycling rating chart. 



%400 
« 200 
1 100 

5 *° 
i *° 

§ *° 
u 10 

a s 

« 


COLLECTOR- TO- EMITTER VOLTAK (Vce> • 4 V 








CASE TO 


M 

PERATU 


HCtTc)-ttS*C 
























.w-c. 






















































_ -*o-c 














































































































































• 




■ 




1 • 




i 




■ 



COLLECTOR CURRENT (IcJ-A 



"■■■5 

i 7 


COLLECTOR-TO-EMITTER V0LTA6C <V CE )- 4 V 
CASE TEMPERATURE IT C ) • Z5*C 






































J- 
































i * 

i 3 






























































































i - 






































































s 






















I 



COLLECTOR CURRENT (I c ) —A 



92CS-29004 



Fig. 3 - Typical dc beta characteristics for all types. Fig - 4 ~ Typical 9>ln bandwidth P'° duct for "" 'WW*- 



.123 



POWER TRANSISTORS 



2N4913, 2N4914, 2N4915 

ELECTRICAL CHARACTERISTICS, at Case Temperature T c - 2S°C Unless Otherwise Specified 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N4913 


2N4914 


2N4915 


V C E 


v B e 


«C 


•b 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


'CEX 


40 
60 
80 


-1.5 
-1.5 
-1.5 




; 


- 


0.1 


- 


0.1 


- 


0.1 


mA 


T C =150°C 


40 
60 
80 


-1.5 
-1.5 
-1.5 


: 


- 


- 


2 


- 


2 


- 


2 


'ceo 


40 
60 
80 


- 


- 







- 


1 


- 


1 


- 


1 


mA 


'CBO 


40 c 
60 c 
80° 


— 


- 


- 


- 


1 


: 


1 


- 


1 


mA 


'ebo 


- 


5 


- 


- 


- 


1 


- 


1 


- 


1 


mA 


V CE0 (sus)b 


- 


- 


0.2 





40 


- 


60 


- 


80 


- 


V 


h FE a 


2 
2 


- 


2.5 
5 


- 


25 
7 


100 


25 
7 


100 


25 

7 


100 




V B E3 


2 


- 


2.5 


- 


- 


1.4 


- 


1.4 


- 


1.4 


V 


V CE (sat) a 


- 


- 


2.5 
5 


0.25 
1 


- 


0.75 
1.5 


- 


0.75 
1.5 


- 


0.75 
1.5 


V 


f T f = 1 MHz 


10 


- 


1 


- 


4 


- 


4 


- 


4 


- 


MHz 


h fe f = 1 kHz 


10 


- 


0.5 


- 


20 


- 


20 


- 


20 


- 




R 0JC 


- 


- 


- 


- 


- 


2 


- 


2 


- 


2 


°C/W 



* In accordance with JEDEC registration data. 

» Pulsed; pulse duration = 300 /is. Duty facto' = 2%. 

b CAUTION: Sustaining voltage, BV CE0 (sus), MUST NOT BE measured on a curve tracer. 




BASE-TO-EMITTER VOLTAGE (V BE )-V 



92CS- 29005 

Fig. 5 — Typical input characteristics for all types. 




12 


COLLECTOR-TO-EMITTER VOLTAOE (Vce)'* V ^ffitrrtrtj 


< 






llllllllllllltlllllllnillil' °Jgr °tllH 

lllllllllllllllllllljjjjjfiy^ 

II llllllllllll IMlMI^ttitMilW 


{• 

o 


MBig^Mlflll 

■Pllll 
iiiiiiiiiiiiiiiiijjwi^iiiiiiiiiniiiiiniiiiiiniiiiiiiiniiiiini 


2 





BASE-TO-EMITTER VOLTAGE (VbeI — V 



20 SO 40 50 60 70 BOSO 100 
COLLECTOR-TO-EMITTER VOLTAOE (V CE >— V 

92CS-2»00« ~w.-.»»v. 

Fig. 6 - Typical output characteristics for all types. Fig. 7 - Typical transfer charactenst.es for all types. 



124. 



POWER TRANSISTORS 



2N5038, 2N5039, 2N6354, 2N6496 

High-Current, High-Power, High-Speed Silicon N-P-N 
Power Transistors 



Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications 



RCA-2N5038. 2N5039, 2N6354, and 
2N6496 are epitaxial silicon n-p-n power 
transistors. They differ in breakdown- 
voltage ratings, leakage-current, and dc- 
beta values 

The high current-handling capability of 
these transistors in conjunction with fast 



switching speeds make these devices es- 
pecially sutted for switching-control am- 
plifiers, power gates, switching regulators, 
converters, and inverters. Other recom- 
mended applications include dc-rf ampli- 
fiers and power oscillators. These transis- 
tors are supplied in the JEDEC TO-3 
package. 



MAXIMUM RATINGS. Absolute Maximum Values: 

•COLLECTOR-TO-BASE VOLTAGE V CB0 

COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: 

With -1.6 volts (V BE ) of reverse bias and 

external base-to-emitter resistance (R BE )-100n Vq ex (sus) 

With external base-to-emitter resistance 

(R BE ) " 500J2, L = 7mH V CEX 

With R BE < 50J1 V CER (sus) 

With base open , V CE0 (sus) 

*EMITTER-TO-BASE VOLTAGE V EB0 

•CONTINUOUS COLLECTOR CURRENT I c 

'PEAK COLLECTOR CURRENT I CM 

•CONTINUOUS BASE CURRENT I B 

'TRANSISTOR DISSIPATION: P T 

At case temperatures up to 2S°C and V(; E up to 28 V. . . . 

At case temperature of 100°C and V CB of 20 V 

At case temperatures above 25°C 

•TEMPERATURE RANGE: 

Storage & Operating (Junction) 

PIN TEMPERATURE (During soldering) 

At distances > 1/32 in. (0.8 mm) 

from seating plane for 10 s max 

* In accordance with JEOEC ragiitration data format IJS-6, RDF-11 



2N5038 2N5039 2N6354 2N6496 



110 


95 


- 


130 


90 


75 


120 


110 


7 


7 


6.5 


7 


20 


20 


10 


15 


30 


30 


12 


- 


5 


5 


5 


5 



140 140 140 140 
80 80 80 80 
Derate linearly to 200°C 



1M- 

i 

6 
4 

2 

10 

* > 

JL 8 

4? 6 

as 
o 

o 
o 

1- 

i 
e 

2 

0.1 


CASE TEMPERATURE (Tc) = 


!5»< 


NEARLY) 




















(FOR TC ABOVE 2«', DERATE L 




















1 1 












0.05 ms 


7 










IC MAX. (PULSED) 






PUL 


SE OPERA 


TI0N* 




f 

- 0.1 ms 










i 1 

IC MAX. (CONTINUOUS 


) 








N* 


















^ 


ir p 




















>& \ 


y. 




" 




















p& 


V \ * 




jljl 






















*\ \ 






r 


> 






















\ 


n 




If 1 
























l-< 


A 




u' 
























'A-l 


























W 














- 




*F 


OR SIN 


GIF 








<s»\ 
















NONREP 


ETITI 


l/EP 


UL 


E 

VCE 


[>MAX.= 75 
"N5039) 
MAX. = 90 
K5038) 


v — 


























VCE0 
( 


V _ 




J s 


-i r 

Vrcn MAX.= IIOV 
^ ^ tU (2N6496) 

,1 II 


1 





COLLECTOR-TO-EMITTER VOLTAGE (V CE )-V m%mm 

Fig. 1 - Maximum operating areas for 2N5038, 2N5039, 2N6496. 



Features: 

■ Maximum operating area curves for dc 
and pulse operation 

■ ls/|,-limit line beginning at 28 V 

■ High collector current ratings 

■ High-dissipation capability 

■ Fast switching speeds — 

Measured at: 5 A, 8 A, 1 A, 1 2 A 
levels 



TERMINAL DESIGNATIONS 




* 

| 100 


















S 5^> 


































g T 

5 * "J" 

i i 


\\ 










\\ 






• 




- 






^ 


V 










• 



NUM6CR OF THERMAL CYCLES 



Fig. 2 — Thermal-cycling rating chart for all 
types. 



20 

IS 
10 

T • 

3 

S '• 

i - 

0J 


ICMAX. (C0NTINU0USI2N5038. 2NS039 










1 PvJ oLj 8,1 










e max. (continuous) "Vai. X.<> "• 


>. 






























hV ^ 
















J^S^ 


> 


















'• ■«< 


m 






















































































ls/b - LIMITED-^ 




















1 
















v ao mx- 

VCC0"AX. 


90VI2N903S)- 
IOV (2N64M)~ 














1 


) ' 


4 




f 


!no 


°II0 * 



COLLECTOR-TO-EMITTER VOLTAGE (V CE ) — V 



Fig. 3 — Maximum operating areas for 
2NS038. 2NS039, 2N6496. 



125 



POWER TRANSISTORS 



2N5038, 2N5039, 2N6354, 2N6496 



ELECTRICAL CHARACTERISTICS, At Case 


Temperature ITq} = 


2S°C Unless Otherwise Specified 












CHARACTERISTICS 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
V dc 


CURRENT 
A dc 


2N5038 


2N5039 


2N63S4 


2N6496 


V C E 


Vf»E 


'C 


>B 


MkM. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


Collector-Cutoff Current: 
With emitter open 
V CB =150V 


'CBO 










" 


- 


- 


- 


- 


5 


- 


- 


mA 


With base open 


'ceo 


55 
70 
100 










: 


20 




20 




20 






mA 


With base-emitter 
junction reverse-biased 


'CEV 


110 
130 
140 
140 


-1.5 


-1.5 








" 


50 




50 




10 




20 


mA 


AtT c = 150°C 


85 
100 
130 


-1.5 
-1.5 







- 


10 




10 








25 


AtT c = 125°C 


140 









- 


_ 


- 


- 


- 


20 


- 


- 


Emitter Cutoff Current 


'ebo 




-5 

-6.5 

-7 









1 


5 
50 


- 


15 
50 


: 


5 


- 


50 


mA 


DC Forward-Current 
Transfer Ratio 


hFE 


2 
2 
2 

5 
5 
5 




5* 
8" 

10" 
2' 
10* 
12" 




50 
20 


250 
100 


30 
20 


250 
100 


20 
10 


150 
100 


12 


100 




Magnitude of Small-Signal 
Forward-Current Transfer 
Ratio: f = 5MHz 
f - 10MHz 


kl 


10 
10 




2 

1 




12 


- 


12 


" 


8 


" 


12 


" 




Collector-to-Emitter 
Sustaining Voltage 
With base open 


V CE0 (sus) 






0.2» 





90" 


- 


75" 


" 


120 b 


- 


100" 


- 


V 


With base-emitter 
junction reverse biased and 
external base-to-emitter 
resistance (RgE* = 100fi 


V CEX (sus] 




-1.5 


0.2 





150" 


- 


120 b 


- 


" 


" 


" 


" 


With R BE < 50ft 

< ioon 


V CER 






0.2 
0.2 





110 b 


: 


95" 


_ 


130" 


_ 


130" 


~ 


Emitter- to- Base Voltage: 
l E = 0.05A 
= 0.005 A 


v EB0 












7 


- 


7 


" 


6.5 


- 


7 


- 


V 


Base-to-Emitter Voltage 


VBE 


2 

5 
5 




8" 
10" 
12" 




- 


1.8 


- 


1.8 


" 


- 


- 


1.6 


V 


Collector-to-Emitter 
Saturation Voltage 


V CE (satl 






8" 
5* 
10" 
12" 
20" 


0.8 
0.5 
1.0 
1.2 
5 


" 


1.0 
2.5 


- 


1.0 
2.5 


" 


0.6 
1 


- 


1.0 


V 


Base-to-Emitter 
Saturation Voltage 


V BE (sat) 






5" 
8" 
10" 
20" 


0.5 
0.8 
1 
5 


- 


3.3 


- 


3.3 


" 


1.3 
2 


- 


2.0 


V 


Output Capacitance: 
VcB= 10V, f = 1 MHz 


Cob 










" 


400 


" 


400 


" 


400 


- 


400 


pF 


Forward-Bias Second Breakdown 
Collector Current: 
t = 1s, nonrepetitive 


ls/b 


25 
28 
45 








5.0 
0.9 


= 


5.0 
0.9 


~ 


5.5 


I 


5.0 
0.9 


1 


A 


Second- Breakdown Energy: 
With base reverse biased, 
R BE = 51J2, L = 25^H 


E S/b 




-1 


5 




" 


" 


- 


" 


0:3 


- 


- 


- 


mJ 


RB = 20J2, L= 180mH 




-4 
-4 


13 
8 




13 


- 


13 


- 


- 


~ 


5.7 


- 


* Saturated Switching Time 
(V CC = 30V, 
'B^'B^ 
Rise Time 


t r 






5 
8 
10 
12 


0.5 
0.8 
1.0 
1.2 


" 


0.5 


- 


0.5 


- 


0.3 
1 


- 


0.5 


MS 


* Storage Time 


l *1 






5 
8 
10 
12 


0.5 
0.8 
1.0 
1.2 


- 


1.5 


- 


1.5 


- 


1 


" 


1.5 


Storage Time (No Loadl 


^2 






0.5 


0.5 


- 


- 


" 


- 


" 


2 


" 


- 


Fall Time 


V 






5 
8 
10 
12 


0.5 
0.8 
1.0 
1.2 


- 


0.5 


" 


0.5 


- 


0.2 


- 


0.5 


Thermal Resistance: 
Junction-to-Case 


r «jc 


10 
20 




It) 

1 




- 


1.25 


- 


1.25 


- 


1.25 


- 


1.25 


°C/W 



£ ISO 

i* 

z|l2C 

s£no 

gjjioo 

jjJH 
8 - *° 

z> 

* 70 


CASE TEMPERATURE <T C ) ■ 25' C 


























!P 










s$* 


3< 












1 

v c?R l«i.l 
















_ Vmo 


(mm) 


v CEB 












^N,. 












lutl 




























1 
















«*J»qJ 




























v CE0l•"• , 


1 1 1 




















S • 








1 5L 



EXTERNAL BASE-TO-EMITTER RESISTANCE (RggH A 

Fig. 4 — Collector-to-emitter sustaining volt- 
tage characteristics for 2N5038. 
2N5039 and 2N6496. 




Fig. 5 — Typical input characteristics for 
2N5038 and 2N5039. 

















COLLECTOR-TO-EMITTER VOLTAGE (V CE )-2V L^ ( | | | | | - 














-H-ff H 1 1 1 1 1 1 1 1 1 1 f-" 












::- t o 














"'•Px 




1 

" 2 








k 




i ' 

0.5 






4-Jjr jott±i 
















II Ml 1 lill 




0.5^ 


1 


1.5 









BASE-TO-EMITTER VOLTAGE (V,£)- 



Fig. 6 — Typical input characteristic for 
2N6496. 



< 25 
H 20 








































































































































































w 


>A 




























1 " 

? 10 
S 5 






WO] 
■TT*" 


-4+ 




























44- 


200+ 






























fm 


5 




























ft* 


°nr 
































nA 


































,20;; 



* In accordance with JEDEC registration data format (JS-6, RDF-1 ). 

* Pulsed; pulse duration < 350 (is. duty factor = 2%. 

b CAUTION: The sustaining voltages V ce q(susI, Vc ER (sus), and Vc E x(s us ) 



MUST NOT be measured on a curve tracer. 



5 10 15 20 25 30 35 40 45 

COLLECTOR-TO-EMITTER VOLTAGE (V c e)-V 

Fig. 7— Typical output characteristics for 
2N5038. 



126 



POWER TRANSISTORS 



2N5038, 2N5039, 2N63S4, 2N6496 




10 < - . • ■ K)0 

COLLECTOR-TO-EMITTER VOLTAGE (V CE ) — V 
Fig. 8 — Maximum operating areas for 2N63S4. 




4 6 B 2 4 • • 

10 100 

COLLECTOR-TO-EMITTER VOLTA6C (Vc£>— V 

Fig. 11 — Maximum operating areas for 2N63S4. 





CASE TEMPERATURE (T r ) • 25* C 




































I 20 


i 










































f ij?3o 












Tjl 








<*,. 
























5p5£ 




trr 
























a to 






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zap I ; ' ; ■ 




















i20H4-4-j-p 


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t 


tr:r. 














:5g£§ 


feMifl 


ifev- 






++>+■ 








1 I I I I I I I I I ! II II 1 1 1 





Fig. 9 — Typical output characteristics 
for 2NS039. 




Fig. 10 — Typical output characteristics 
for2N6496. 



C«M TIMUMTUM <T C 1.2»»C 




. 24 6 « » 12 14 « It 20 21 24 
COLLECTOH-TO-EUITTEII VOLTME (Vc£>— V 

»!CS-J0I2< 

f fa. 72 - Typical output characteristics for 
2N63S4. 




1000 



^/0. 73 — Typical transfer characteristics for 
2NS038. 



127 



POWER TRANSISTORS 



2N5038, 2N5039, 2N6354, 2N6496 



29 

1 *° 
S 15 

1 '° 


COL 


4.EC 


OR- 


T0- 


EMIT 


TER VOLTAGE 


V CE 


•5V 


~ 




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~ 










\:\ 


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:::: 








7^k 


*5 






hi; 




.:= 


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== 










:::: 


™ 


— 


• — 




12 
1 


COLLECTOR -TO-EMITTER 
VOLTAOE (V C E 1 ■ 2 V 




















~h o i tii 1 1 1 1 1 1 1 1 in 














ffiMI 1 1 1 1 1 1 1 1 1 1 1 1 1 






























z 

I ' 

a 6 

J « 

o 

2 








ill|i|||Jj! 




tMlllllllWWffi 










m Tit 


Ln j ' " ' * " ' ' 








1 1 1 I II f. jc : 


1 

































BASE-TO-EMITTER V0LT40E (V„)— V 



Fig. 14 — Typical transfer characteristics for 
2NS039. 



Fig. 15 — Typical transfer characteristics fo< 
2N6496 



Fig. 16 — Typical transfer characteristics for 
2N6354. 



£ ISO 

2 I2S 
| 100 

1" 

3 50 

g o 


COLLECTOR-TO-EMITTER VOLTAGE (V CE ).JV 


















125 
































\ 


































\ 














C 


st; 


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RATUR 


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'" 


*«0 








c 


101 








3.1 








i 






i a 





i 




100 



COLLECTOR CURRENT (Ijl-A 

Fig. 17 — Typical dc beta characteristics for 
2N5038. 




COLLECTOR CURRENT (I c l- 



Fig. 18 - Typical dc beta characteristics for 
2N5039. 



S IO0 

1 

>_ 60 
I 40 

l " 


COLLECTOR 


-TO-EMITTER VOLTAGE 


<*CE 


■2V 












, 


| 








• 


S, 












*'l 
























■" 


k 










^ 












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s 




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1 




1 

1 


















^ 






*s 


^ 










n 

























COLLECTOR CURRENT II C I — A 

Fig. 19 - Typical dc beta characteristics for 
2N6496. 




COLLECTOR CURRENT I I c 



Fig. 20 — Typical normalized dc beta charac- 
teristics for 2N6354. 



!. 

3 ra 
§ 

i 

1" 

<0 
30 


COLLECTOR-TO-EMTTER VOLTASE (VcE) = « v 
CASE TEMPERATURE (T c ) = 25»C 



































































































































COLLECTOR CURRENT dc)-A 



Fig. 21 — Typical gain-bandwidth product for 
2N5038, 2N5039, 2N6496. 




U U.3 I r - 

COLLECTOR-TO-EMITTER SATURATION VOLTAGE [v CE (MtlJ— V 



Fig. 22 — Typical saturation voltage charac- 
teristics for 2N6354. 



25 
1 

5 

S 15 

i 






















BASE SERIES RESISTANCE ( R g )' 20 A 
































































































































































































V% f 
























































\ '*•)•. 














































































































































h J ~ 




















































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X* 






























s v 






























,*■ 






S 
























. 


«» 




























V 





INDUCTANCE 



Fig. 23 — Maximum reverse-bias, second- 
breakdown characteristics for 
2N5038 and 2NS039. 



T l0 


CASE TEMPERATURE (T c >- 25 'C 
BASE SUPPLY VOLTAGE (Vbb> ,_ 4V 










! 










INDUCTANCE <L ) ■ 200 ?H 




k — 








t I 


r 












f 












, 


















. 750 


s 


tr 








1000 






ft 


/J 












/ / 












// / 














V // 













20 40 60 80 

BASE SERIES RESISTANCE (R B I — 



100 120 



Fig. 24 — Maximum reverse-bias, second- 
breakdown characteristics for 
2NS038 and 2NS039. 




Fig 25 — Maximum reverse-bias, second- 
breakdown characteristics for 
2N6496. 



128 



POWER TRANSISTORS 



2N5038, 2N5039, 2N6354, 2N6496 




Fig. 26 — Maximum reverse-bias, second- 
breakdown characteristics for 
2N6496- 



=■-■■ 






PULSE MIRATION 


• »„ 








^ 




-"- 


•.^: r=t 








collector supply voltace iv cc i . »v 

••l • l»j • ic 10 

CASE TEaPERATURE (T C I • !5»C 


=i 






iiii^ 


* 

I 
£ u 

a 

j 01 

i 

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1 « 


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=; 










Hi: 






iiii 




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- 


















iiii 




nil 


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s 












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iiii 


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=£ 


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E 












= 








Si 




n= 


:: ~ 


~i 


HS 



COLLECTOR CURRENT dc)-A MSS-3S40S2 

^/fli 27— Typical rise-time and fall-time 

characteristics for 2NS038, 2N5039, 
2N6496. 



1.0 
2.5 

ts. ! » 

i u 

a 

1 u 

o.s 












PULSE DURATION 


20, 




















COLLECTOR SUPPLY VOLTAGE 1V CC ) . 30 V 












'Bi ■ Ibj ' k 10 

CASE TEaPERATURE [T c l . !S"C 




















:::: 








:::: 






















:•;:, 






:.. r 






















;h; 






















































































































!!!• 



























































COLLECTOR CURRENT dc>-» 



Fig. 28 — Typical storage time characteristics 
for 2N5038, 2N5039. 2N6496. 



= o.s 

i 

^O, 
< 

S as 
i a: 

u 
8 O.I 


PM.SC DURATION" ZOut 

RSPfTITIO* RATI'I >Ml 

COLLECTOR SUPPLY VOLTASE ( V cc 1 ■ 50 V 

CASE TEMPERATURE (T C I'2»'C 
























til ITHli 1 H4fl" l ' > ifT i fi 








irrH 111 11 ' iflllllllll 











t 4 « t io a 









COLLECTOR CURRENT lie)— A 

■2CS-20I28 

Fig. 29 - Typical rise- and fall-time charac- 
teristics for 2N6354. 



t" 

- t 
I 

g '•» 

i . 

O.S 


PULSE OURATION'20(lt 
REPETITKJN RATE -1 kHi 
COLLECTOR SUPPLY VOLTAOE 1 VcCl'SO V 
CASE TEMPERATURE <T<-)-29'C 
I«rlB 2 'Ic"0 


















































































^^g: 























COLLECTOR CURRENT (I c >— A 

92C5-SOI26 

Fig 30 — Typical storage-time characteristics 
for 2N6354. 



129 



POWER TRANSISTORS 



2N5050, 2N5051, 2N5052 

High-Voltage Silicon N-P-N Transistors 

For High-Speed Switching and Linear-Amplifier Aorjlications 



Features: 

■ Economy types for ac/dc circuits 

■ Fast turn-on time at high collector current 



The RCA-2N5050, 2N5051. and 2N5052 
are silicon n-p-n transistors with high break- 
down voltages and fast switching speeds. 
Typical applications for these transistors 
include high-voltage operational amplifiers, 
high-voltage switches, switching regulators, 



converters, inverters, deflection- and hi-fi 
amplifiers. 

The 2N5050, 2N5051, and 2N5052 tran- 
sistors are supplied in steel JEDEC TO-21 3MA 
hermetic packages. 



TERMINAL DESIGNATIONS 



MAXIMUM RATINGS, Absolute-Maximum Values: 

2N5060 2NB061 2NB052 

* V CBO 

* V CEO 

* V EBO 

* 'c 

'cm 

* 'b 

* P T 

T c up to 25 C 

Tq above 25 C, derate linearly 

* T C 8 

* Tl - 

At distance ^ 1/1 6 in. (1 .58 mm) from seating 

plane for 1 s max 

* In accordance with JEDEC registration data. 



(FLANGE) 



125 
125 


150 
150 

1 


200 
200 


V 
V 
V 
A 
A 
_ A 




40 




— w 




0?6f} . 




_ W/°C 




. -65 to 200 . 
. -65 to 175 . 

93R 




°C, 






°P. 






°c 




COLLECTOR-TO-EMITTER VOLTAGE (V CE »-V 

Fig. 1 — Maximum operating areas for all types. 




JEDEC TO-21 3M A 




COClBCTOft GURROIT (Xq)— nA 



Fig. 2 — Typical dc beta characteristics for 
all types. 




Fig. 3 — Typical collector-to-emitter saturation 
voltage as a function of collector 
current. 



130 



POWER TRANSISTORS 



2N5050, 2N5051, 2N5052 



ELECTRICAL CHARACTERISTICS, At Case Temperature (T c ) = 25°C 
Unless Otherwise Specified 





CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


Units 




VOLTAGE 
Vde 


CURRENT 
Adc 


2NS0S0 


2N5051 


2N5052 




V C E 


v B e 


»C 


<B 


Min. 


Max. 


Min. 


Max 


Min. 


Max. 


* 


'CEX 


125 
150 
200 


-1.5 
-1.5 
-1.5 






- 


0.5 


— 


0.5 


- 


0.5 


mA 




AtT c =150°C 


125 
150 
200 


-1.5 
-1.5 
-1.5 






- 


5 


: 


5 


- 


5 


* 


'ceo 


62.5 

75 

100 








- 


0.1 


— 


0.1 


- 


0.1 


* 


'ebo 




-6 







- 


0.1 


- 


0.1 


- 


0.1 


* 


V CE0 (sus)& 






0.2« 





125 


- 


150 


- 


200 


- 


V 


* 


hFE 


5 
5 
5 




0.75" 
1a 
2a 




25 

25 

5 


100 


25 

25 

5 


100 


25 

25 

5 


100 




* 


V B E 


5 




0.75» 




- 


1.2 


- 


1.2 


- 


1.2 


V 


* 


V CE (sat) 






0.75» 
2a 


0.1 
0.4 


- 


1 
5 


- 


1 
5 


- 


1 
5 




'S/b 


100 


- 






0.15 




3.15 


— 


0:15 


- 


mA 


* 


|h fe | f = 5MHz 


10 




0.25 




5 


- 


2 


- 


2 


- 




* 


h fe f = 1kHz 


10 




0.25 




25 


- 


25 


- 


25 


- 


* 


C obo f=1MHz 


10C 









- 


250 


- 


250 


- 


250 


pF 


* 


V 


120<« 




0.75 


0.1 


- 


0.3 


- 


0.3 


- 


0.3 


A* 


* 


*f 


I20d 




0.75 


0.1 


- 


3.5 


- 


3.5 


- 


3.5 


* 


tf 


I20<< 




0.75 


0.1 


- 


1.2 


- 


1.2 


- 


1.2 



R 0JC I I 


I l-h.7 


- | 3.7 |- |3.7 


°C/W 



* In accordance with JEDEC registration data. c v CB value 

* Pulsed: pulse duration = 300 ms, duty factor < 2%. d v cc value 

b CAUTION: The sustaining voltage V CEO (sus) MUST NOT be measured on a curve tracer. See circuit. 
Fig. 9, or equivalent, |to measure V CEO (»us). 



COLLECTOR-TO-EMITTER VOLTASE (Met) • n V 








so 

I 


















#> 




*?/ 




f 








81 




SI 










*Sy 








/ 






II 








' 


1- 

8 20 

! 

10 







E 














! 














J 
































7 





























-TO-EMtTTCT VOLTiISC (V|C>— V 



Fig. 4 — Typical input characteristics for all types. 




92CS-30560 



COLLECTOR CURRENT (I c )— A 

Fig. 5 — Typical rise time as a function of collector 
current. 




•2C3-303M 



COLLECTOR CURRENT Oj) — I 

Fig. 6 — Typical storage time as a function of 
collector current. 



0.9 


^^W PULSE DURATION ■ ZO >• lllllllllllll 
llllllllll REPETITION RATE • 1000 PULSES lllllllllllll 
MBfm COLLECTOR SUPPLY VI IllUIW] 
lUlilllU CMC TEMPERATURE (Tc) • »S«C lllllllllllll 
mH.mlmfli. lllllllllllll 


| 0.6 

1 0.S 

0.4 
































|||l|l||ljl|[ljv§| 
















b ft4 se 


a. i.« 2 







COLLECTOR CURRENT O^)— A 92CS-»9»I 

Fig. 7 — Typical fall time as a function of collector 



PULSC DURATION*tO*l 
REPETITION RATE •1000 PULSES/« 

r C '0.7SAti ( -o.iA 

CASE TEMPERATURE (T e )>SS«C 




COLLECTOR SUPPLY V0LTA4E (Vec> — V 92CS-J0SJ4 

Fig. 8 - Typical rise, fall, and storage time as a 
function of collector supply voltage. 



131 



POWER TRANSISTORS 



2N5239, 2N5240 

High-Voltage Silicon N-P-N Transistors 

For High-Speed Switching and Linear- 
Amplifier Applications in Industrial and 
Commercial Service 



The RCA-2N5239 and 2N5240" are 
multiple epitaxial silicon n-p-n power 
transistors employing a new overlay 
construction with several emitter 
sites. 

The high breakdown voltage ratings 
and exceptional second-breakdown 
capabilities of these transistors 
make them especially suitable for 
use in series regulators, power 



amplifiers, inverters, deflection cir- 
cuits, switching regulators, and high- 
voltage bridge amplifiers. 
These types differ in breakdown 
voltage and leakage current values. 
The 2N5239 and 2N5240 are supplied 
in steel JEDEC TO-204MA hermetic 
packages. 

*RCA Dev. Nos. TA2765 and TA2765A, respec- 
tively. 



Features: 

m High voltage ratings: Vqer(sus) 
= 350 V, RflE < 50 Q (2N5240) 
= 250 V, RBE < 50 Q (2N5239) 

■ High power dissipation rating: 

PT = 100 W at Vce = 150 V, 
Tc = 25 °C 

■ For switching applications where 
circuit values and operating condi- 
tions require a transistor with a 
high second breakdown rating (ls/b) 
(limit line begins at 150 V) 

■ Exceptional second-breakdown: 

0.67AatVcE = 150 v 

■ Maximum areaofoperation curves 

for dc and pulse operation 



TERMINAL DESIGNATIONS 



MAXIMUM RATINGS, Absolute-Maximum Values 

2N5239 

* VcBO 300 

VcER(sus) 

RBE < 50Q 250 

* VcEO(sus) 225 

* VEBO 

* »C 

*IB 

*P T 

Tc<25 ,, CandVcE<150V 100 

Tc <25°C and Vce > 150 V See Fig. 1 

Tc >25°C and Vce > 150 V - SeeFig.1and2 _ 

*T s tg,Tj _ -65 to 100 _ 

T|_ 

At distance > 1/32 in. (0.8 mm) from seat- 
ing plane for 10 s max 

'In accordance with JEDEC registration data 





2N5240 






375 


V 




350 


V 




300 


V 


6 




V 


5 




A 


2 




A 



w 



230 




JEDEC TO-204MA 



NOTE: CURRENT DERATING AT CONSTANT VOLTAGE APPLIES 
ONLY TO THE DISSIPATION-LIMITED PORTION AND Is/b 
LIMITED PORTION OF MAXIMUM-OPERATING-AREA CURVES. 
DO NOT DERATE THE SPECIFIED VALUE FOR I C MAX . 




CASE TEMPERATURE <T C ! 

Fig. 1 -Derating curves for both types. 



IOO 

* , 

i 

* 

o 
10 












































































































1 






















































































CASE-TEMPERATURE 
CHANGE (4T C )'50»C 








o 


v 






























\ 




























3 


f 


\I2S 


•c\io 


)*C 


s| 


S'C 

K 













































NUMBER OF THERMAL CYCLES 



Fig. 2 -Thermal-cycling rating chart for both 
types. 




EXTERNAL BASE-TO-EMITTER RESISTANCE (Rg E l— A 

92LS-IM6KI 

Fig. 3 -Sustaining voltages as a function of 
base-to-emitter resistance for both 
types. 



COLLECTOR-TO-EMITTER VOLTAGE (V^l- 


10V 












1 
















S 40 

' 30 

Z 
X 

X- 20 

I 

| 10 

1 


































































,11 


<■>• 


2 


■c 


























<£>rr 




















» 


<? 


n 


S? 


*£ 












































































































































1 





01 













J 



















K> 



COLLECTOR CURRCNT«c)— A 

UlllHI 

Fig. 4 - Typical dc beta characteristics for both 
types. 



132 



POWER TRANSISTORS 



2N5239, 2N5240 



ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 25°C unless 
otherwise specified 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N5239 


2N5240 


VCE 


VBE 


ic 


IB 


Min. 


Max. 


Min. 


Max. 


ICEO 


200 









— 


5 


— 


2 


mA 


ICEV 


300 
375 


-1.5 
-1.5 









4 


— 


2 


(T C = 150°C) 


300 


-1.5 






— 


5 


— 


3 


lEBO (VEB = 5 V) 
(V E B = 6 V) 












— 


5 
20 


— 


1 
20 


vebo 








0.02 


6 


— 


6 


— 


V 


VCEO(sus)a 






0.2b 




225 


— 


300 


— 


VCER(sus)a 
(RBE < 50 Q) 






0.2b 




250 


— 


350 


— 


hFE 


10 
10 
10 




0.4b 

2 b 

4.5b 




20 
20 
5 


80 
80 


20 
20 
5 


80 
80 




VBE 


10 




2b 




— 


3 


— 


3 


V 


VcE(sat) 






2 b 
4.5b 


0.25 
1.125 


— 


2.5 
5 


— 


2.5 
5 


IS/b (t = 1 s) 


150 








0.67 


— 


0.67 


— 


A 


Es/b (RBE = 50 Q, 
L = 0.2 mH, 
Veb = 4 V) 






4 




1.6 


— 


1.6 


- 


mJ 


|hfe| (f = 1 MHz) 


M) 




0.2 




2 


— 


2 


— 




hfe (f = 1 kHz) 


10 




4 




20 


— 


20 


— 




fT 


10 




0.2 




2 


— 


2 


— 


MHz 


Cobo (f = 1 MHz) 


10 c 









— 


150 


— 


150 


PF 


RflJC 










— 


1.75 


— 


1.75 


°C/W 



* In accordance with JEDEC registration data. 

a CAUTION: The sustaining voltages VcEO< stJS ) and Vcer(s us ) must not be measured on a curve 

tracer. These sustaining voltages should be measured by means of the test circuit shown in Fig.14 

b Pulsed; pulse duration < 350 ^s, duty factor < 2%. 

c Vcb value 



COLLECTOR-TO-EMTTER VOLTAOE (V^l-lOV ||||||||||||||||tfti 


T * 

i 2 

i ■ 














P-SfflailmlP ffl 






iDttimtiiim^'MiiiiiiiiiiiiiiiiiHii 








^^[Mm WW 
^iifttttitttn 

























BASE-TO-EMITTER VOLTAGE (V BE )-V 



Fig. 5 - Typical transfer characteristics for both 
types. 




coLLECTOR-To-eiarm voltme (v^i- 



Fig. 6 - Typical output characteristics for both 
types. 




Fig. 7 - Typical reverse-bias, second-breakdown 
characteristic for both types. 



.133 



POWER TRANSISTORS 



2N5239, 2N5240 




100 
COLLECTOR-TO- EMITTER VOLTAGE (VcE>— V 



IOO0 



92LS-IS590I 

Fig. 8 - Maximum operating areas for both 
types. 



CASE SUPPLY VOLTAGE (Vga) " -4 V tttiitttttttittttttttttt : 
INDUCTANCE (L) ■ 500 ,H 1 | 1 1 1 | 1 1 1 1 1 1 1 1 1 1 1 1 1 1 - 
CASE TEMPERATURE [T C > ■ ;s* c | 1 I r " 


g 






















































' 1 1 1 II irr- 


•rrf 


l-^t^P^^Wtt^rrF 



BASE SERIES RESISTANCE |R a ) - 



Fig. 9 -Typical reverse-bias, second-breakdown 
characteristic for both types. 



CASE TEMPERATURE ( T c | . 25' C 
INDUCTANCE (LI > 500 »H 
BASE SERIES RESISTANCE (Rg)-IOO| 




BASE SUPPLY V0LTA6E (Vg B )—V 



Fig. 10 -Typical reverse-bias, second-break- 
down characteristic for both types. 



CCLLECTOR-TC-EMITTER VOLTMC («&>•» 
CAt*TCMPEJUTUR€<Tc)>ZS*C 












i ' 

J_ 7 

* 4 

1 , 

9 
































































































































































































































* 








* 


it 




\ 







COUXCTOR CURRENT Uc)-A ,„.„,„„ 

Fig. 1 1 - Typical gain-bandwidth product as a 
function of collector current for both 
types. 




COLLECTOR CURRENT <I C > — A 

Fig. 12 - Typical saturated-switching time (stor- 
age) as a function of collector current 
for both types. 

































REPETITION RATE •MO PULtE** 
COLLECTOR OUPPVY vOLTMt (*C>"» V 
CA*E TCHPCrMTURCIIcl'tfT^ 


































i 
1 <x« 






























IT 


YRI 
















































s 


r 
































/ 
































































8 

1 0± 






J 






















• 


ityrT 










r 




f 





















































































































































































































































collector umit (ic»-A mi »» » 

Fig. 13 - Typical saturated-time (turn-on or fall) 
as a function of collector current for 
both types. 



134. 



POWER TRANSISTORS 



2N5293-2N5298, RCA3054 

Hometaxial-Base, Silicon N-P-N VERSAWATT Transistors 



General-Purpose Types for Medium-Power Switching and Amplifier 
Applications in Military, Industrial, and Commercial Equipment 



RCA-2N5293, 2N5294, 2N5295, 2N5296, 
2N5297, 2N5298, and RCA3054 are 
hometaxial-base silicon n-p-n transistors. 
They are intended for a wide variety 
of medium-power switching and amplifier 
applications such as series and shunt 
regulators, and in driver and output stages 
of high-fidelity amplifiers. Types 2IM5293, 
2N5295, and 2N5297 have formed 
emitter and base leads for easy insertion 



into TO-66 sockets. Types 2N5294, 
2N5296, and 2IM5298 are electrically 
identical to the 2N5293, 2N5295, and 
2N5297, respectively, but have straight 
leads. The RCA3054 is supplied with 
straight leads. 

These plastic power transistors differ in 
voltage ratings and in the currents at 
which the parameters are controlled. 



Features: 

■ Low saturation voltage— 
VcE(sat) = 1 V max. at \q = 0.5 A 

(2N5293, 2N5294) 

= 1 V max. at lc = 1 A 

(2N5295, 2N5296) 

= 1 Vmax. atlc = 1.5 A 
(2N5297, 2N5298) 

■ VERSAWATT package ( molded - 
silicone plastic) 

■ Maximum safe-area-of-operation 



MAXIMUM RATINGS, Abtoluf-Mtximum Vslun: 



COLLECTOR-TO-BASE VOLTAGE V CB o 

COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: 

With -1 .8 volti (Vbe> of revtrw biaa Vcev<"»> 

With axtarnal baaa-to-amlttar ratlttanca (Rbe 1 " 10017. . v c er(>uiI 

With b*w opan Vceo ,,u> ' 

EMITTER-TO-BASE VOLTAGE V E 80 

COLLECTOR CURRENT I c 

BASE CURRENT I B 

TRANSISTOR DISSIPATION: P T 

At cm tamparaturat up to 25°C 

At cm tamparaturat abova 2B°C 

At ambiant lamparaturai up to 26°C 

At ambiant tamparaturat abova 25°C 

TEMPERATURE RANGE: 

Storage and Operating (Junctlonl 

LEAD TEMPERATURE (During aoldarlng): 

Atdiitenee>1/8ln. (3.17mml from can (or 10 1 max. . 



2NS293 
2N52M 



2N6295 
2NS296 



2N5297 
2N5298 RCA30S4 



Oarate linaarly at 0.288 



Jarata linaarly ai 0.0144 




COLLECTOR-TO-EMITTER VOLTAGE (V CE ) — V 



Fig. 1 - Maximum operating areas for 2NS293-2NS298. 



MCS-lTloORI 



w/ c 

w 

w/°c 



TERMINAL DESIGNATIONS 



r^ 



y 



o 






92CS-27SZ0 

BOTTOM VIEW 

JEDEC TO-220AA 
2NS2S3, 2NB2SB, 2NB2B7 




BOTTOM VIEW 



JEDEC TO-220AB 
2N6294, 2N62S6, 2N6298, RCA30B4 




COLLKTOR-70-tUmW VOLTaSE lV C e>— V 

Fig. 2 - Maximum operating areas for RCA3054. 



135 



POWER TRANSISTORS 



2N5293-2N5298, RCA3054 



ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 25°C, unless otherwise specified. 



CHARACTERISTIC 
SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N5293 
2N5294 


2N5295 
2N5296 


2N5297 
2N5298 


RCA3054 


V C E 


VBE 


•c 


>B 


MIN. 


MAX. 


MIN. 


MAX 


MIN. 


MAX 


MIN. 


MAX. 


ICEV* 


90 
65 

35 


-1.5 

-1.5 
-1.5 






- 


0.5 


- 


2 


- 


0.5 


- 


1 


mA 


'CEV - 
(T C = 150°C> 


90 
65 
35 


-1.5 
-1.5 
-1.5 






- 


3 


- 


5 


- 


3 


- 


6 


'CER 
(R BE = 100 i2) 


50 
20 








~ 


0.5 


- 


: 


- 


0.5 


: 


_ 


mA 


'CER 
(T C = 150°C) 


50 








- 


2 


- 


- 


- 


2 


- 


- 


mA 


'EBO 




-7 
-5 
-4 









- 


1 


- 


1 


- 


1 


- 


1 


mA 


h FE c 


4 
4 
4 




0.5 

1 

1.5 




30 


120 


30 


120 


20 


80 


25 


100 




V CE0 (sus) c 






0.1 
0.1 
0.1 







70 


- 


40 


- 


60 


- 


55 


- 


V 


V CER (sus) c 
(R BE = 100 £2) 






0.1 
0.1 
0.1 




75 


- 


50 


- 


70 


- 


60 


- 


V 


Vq E \/(sus) c 




-1.5 
-1.5 
-1.5 


0.1 
0.1 
0.1 




80 


- 


60 


- 


80 


- 


90 


- 


V 


v B e c 


4 
4 
4 




0.5 

1 

1.5 




- 


1.1 


- 


1.3 


- 


1.5 


- 


1.7 


V 


V CE (sat) c 






0.5 
1 

1 
1.5 


0.05 
0.05 

0.1 
0.15 


- 


1 


- 


1 


- 


1 


- 


1 


V 


*T 


4 




0.2 




0.8 


- 


0.8 


- 


0.8 


- 


0.8 


- 


MHz 


*ON 


v cc 

= 30 




0.5 

1 

1.5 


0.05 a 

0.1 a 

0.1 5 a 


- 


5 


- 


5 


- 


5 


- 


- 


/is 


tOFF 


vcc 

= 30 




0.5 

1 
1.5 


-0.5 a 
-0.1 b 
-0.15 b 


- 


15 


- 


15 


- 


15 


- 


- 


Ms 


r 0jc 










- 


3.5 


- 


3.5 


- 


3.5 


- 


3.5 


°C/W 


R 0JA 










- 


70 


- 


70 


- 


70 


- 


70 


°C/W 



a \q. value (turn-on base current). 



• l CEX for RCA3054. 



D \gj value (turn-off base current). 



c Pulsed, pulse duration = 300 /is, 
duty factor = .018. 



136 



POWER TRANSISTORS 



2N5293-2N5298, RCA3054 



100 

• 
* 

J. « 

z 2 

< 

S 10- 

5 J 

i , 

z 
< 


























































,.<■ 




















^ 


5» 


















x\v 


















^ 


















a 


















\\ 






k 


V 


V 




^\ 


m- 





10,000 
NUMBER OP THERMAL CYCLES 

92CS- 20101 

Fig. 3 — Thermal-cycling rating chart for 
all types. 



CASE TEHKRATIME ITc) ■ 2S*C 


















H 

i n 

Iff 

SB 

s»« 

8 «o 








1 


III 1 II 


















1 II 1 1 
Vera l»w * *>"■> 
















vceo 














































' 










veto 
































VCSR 0NJH5 • *S2H 
































































^ 




»ceo 































I0< ' 10> 



EXTERNAL MSE-TO.EMTTER RESISTANCE IRHI - 



Fig. 4 — Sustaining voltage vs. base-to-emitter 
resistance for 2NS293-2N5298. 





, 






















































is 






S 










iiiip 




iii: 


=i 


















~-i~- 


;7g 










g 


200 

3 ISO 










'pi? 


■l r:ir 










S 








_."Vi\ 






















:;$ 








-i 










aS 




















Ft* 












3 

so 








fi 


if 




::u 




: "r 


rrt 






















;:;; 


m 




















:i:: 












HI - : 


!i^* 




5E 




-!H 










s# 


tS 




(i? 



1.0 IS 20 2.5 1.0 

BASETO-EKITTER VOLTAGE (V M > - V ^^ 

Fig. 5 — Typical input characteristics for 
2NS293, 2N5294, and RCA3054. 




EASE-TO-EIIITTER VOLTAGE |V M ) . V 



Fig. 6 — Typical input characteristics for 
2N5295 and 2N5296. 















































200 
1 

i in 




































— = 
















::■: 


h4~ 


























~- 


S 


I 




















:::: 






















•in 


















... 




ri'SJ-rrr 










:H: 


i;n 


;3 


P 
















:_: 




rii 




3 


~.\ 




™J 


Hi 


1 






























:'iH 


s 










p 









l.S 2.0 

BASE-TO-EMTTEE VOLTAGE |V U ) - 



Fig. 7 — Typical input characteristics for 
types 2N5297 and 2N5298. 




base toehitter voltage (»h) - 



f/fli. S — Typical transfer characteristics for 
2N5293. 2N5294, and RCA3054. 




BASE-TO-EMITTER VOLTASE (V(D - V ^^ 

Fig. 9 — Typical transfer characteristics for 
2N5295 and 2N5296. 




0.5 1.0 

EASE -ro-EUTTEIt VOLTAGE (V K ) - 



Fig. 10 — Typical transfer characteristics for 
2N5297 and 2N5298. 



COLLECTOR TOE.1TTER VOLTAGE (V CT ) • 1 V 












in 

I 

1" 
t 
I" 

1 * 
















































/ 






















_«- .-1 






^ 


















T 






V 
















/ 




4/ 






s 












• 




f 










\ 








> 


'* 












<! 


\ 






T 














^ 






8 

t 




















> 


\ 
























V 





COLLECTOR CURRENT (10 . A „ 

Fig. 1 1 - Typical dc beta for 2N5293, 
2N5294, and RCA 3054. 



COLLECTOR-TO-CUTTER VOLTAGE (Vce) ' 


4V 






























I 

I* 


































V 






\ 


















y 


■ 








> 
















f 


1 


9> 


















I I* 




' 




Y 




















4 


rf 






































!j 


































,_1 































































tm 




1 


•oi 






'l.O 






\ 



COLLECTOR CURRENT <!<;)- A a 

Fig. 12 - Typical dc beta for 2N5295, 
and 2N5296. 



137 



POWER TRANSISTORS 



2N5293-2N5298, RCA3054 



no 

100 

1 . 

!- 

1 n 

i ■ 

3 40 










'" 


— » 


'-.. 


1 COLLECTOH 


TO-UITTOI 






> 


/ 






"« 


v 














4/ 
























' 


4 




















' 


J 


t 


















2\ 


y\ 


4 














^ 




















\ 






















\ 






s : 




















^ 


L_ 




* 






















\ 




D 






















A 






Ml 




I 






i 






1 




1 


( 



COLLECTO* CUIWIKT «£) - » m> 

Fig. 13-Typical dc beta for 2N 529 7 and 
2N5298. 



c6u.iet6lit6-E.itlH V8LTOi(V c(l .4v 

CAJI TMMIM1VM (to ■ 19> C 
















1.4 

jl, 

t 01 

§ '■* 

a o.4 

U 




























































































































































































































































































































































• 






















coUICTM Tt Unil VtlMM IV c ,i . 4 V 

UK TMWMTUM (Tc) • >S> C 








































i ., 
§ " 






























































































































































\ 






















































** 0.4 

0.4 


















































































































1 








1 













COLLICTOB CUMMNT (It;) - *A 



COLLICTOR CUMCNT (It;} . mA 



Fig. 74-Typicat gain-bandwidth product for Fig. 15-Typicat gain-bandwidth product for 
2N5293, 2N5294,and RCA30S4. 2N5295and 2N5296. 



1.0 

!.« 

i 

t 

a 

0.4 

0.4 


COLLECTOHTO-EWTTEE VOLTAOE IVril ■ < V 
CASf TMNMTUM ITc) • 2S» C 








































































































































































































































































































































































10 



















collectoh cumekt del - -a 




CASE TE*Pf ftATUM ITc) < IP c 








:IM 










J! 






























*12? 










' 2.0 
S 


















100 










1 " 


















I to 










5 '•• 


















;4o 










o.s 








l 



























0.2 







0.4 


0.1 


SB 












COLLECTMTO-EMTTE » VOLT AM (Ve,) . 



COLLECTOETOEalTTE* VOLTACE (V ce ) 



Fig. 16-Typical gain-bandwidth product for Fig. 17-Typical output characteristics for Fig. 18-Tvoical outout characteristics for 
2N5297 and 2N5298. 2N5293, 2NS294, and RCA3054. 2N5295 and 2N5296. 




COLLECTO*.TO.E«ITTE« VOLTAOS (Vce) - V „„.„„ 

Fig. 19— Typical output characteristics for 
2N5295 and 2N529& 



CASE TEaND 


ATUHS (T c 


I-2S«C|S= 


















< 4.0 

5 
5 1.0 

g 2.0 

° 1.0 




=J0O = 


1 




















CU»i 


Si 


3 


















= 100 = 

-g tor 

sr 10 = 

S 1ASI 
















ENT{I|)- 


I 





















COLLECTOKTO-ErUTTEII VOLTAGE <V C E> - « 

Fig. 20- Typical output characteristics for 
2N5297 and 2NS298. 




Fig. 21- Typical saturated switching charac- 
teristics for 2NS29S, 2N5296, 
and RCA3054. 



138 



POWER TRANSISTORS 



2N5301, 2N5302, 2N5303 



High-Current High-Power 
High-Speed N-P-N Power Transistors 



The RCA-2N5301, 2N5302 and 2N5303 are 
epitaxial-base silicon n-p-n transistors in- 
tended for a wide variety of high-power, 
high-current applications, such as power- 
switching circuits, driver and output stages 
for series and shunt regulstors, dc-to-dc 



converters, inverters, and solenoid (hammer) 
/relay drivers. 

These devices differ in maximum voltage 
ratings and Vcrf(sat), V[j{:(sat), and Vgj: 
characteristics. All are supplied in JEDEC 
TO-204MA hermetic steel packages. 



Features: 

■ Specification for hpg and Vcg(sat) up to 30A 

■ Current gain-bandwidth product fj = 2 MHz 
min. at 1A 

■ Low saturation voltage with high beta 

■ High dissipation capability 



MAXIMUM RATINGS, Absolute-Maximum Values: 

2N5301 

V C BO 40 

V CE0 (sus) 40 

V EBO 

■c 

'cm 

>B 

'bm 

p T 

AtT c <25C 

AtT c >?5°C Derate linearly 

T s«g. T J 

T L 

At distance > 1/32 in. (0.8 mm) from seating plane 

for 10 s max 



TERMINAL DESIGNATIONS 



2N5302 

60 
60 

— 5 — 

— 30 — 

— 50 — 

— 7.5 — 

— 15 — 



2N5303 

80 
80 



200 

1.15 



See Fig. 1 and 2 
65 to 200 — 



* In accordance with JEDEC registration data format JS-6 RDF-2. 




60 "" 100 
COLLECTOR-TO-EMITTER VOLTAGE (Vce> — V 

92CS-29797 

Fig. 1 - Maximum operating areas for 2N5301, 2N5302, and 2N5303. 



V 
V 
V 
A 
A 
A 
A 

W 
W/°C 




JEDEC TO-204MA 




50 75 
CASE TEMPERATURE (T c >- 



I50 ITS 200 



Fig. 2 - Derating curves for 2NS301. 2NS302, 
and2N5303. 



i«00 8 

„ 6 

i ^ 

s 

K I00 
W 8 

SQ 6 

z z 

=5 10 
o ■ 8 

S 6 

s - 

fi . 

° I 




















































I 


























"^fe 


















CASE 


TEMPERA 


TU 


IE 


<J C ). 


!S%- 
















































































































































































































































I 

































































COLLECTOR CURRENT <I C ) — A 

Fig. 3 — Typical dc beta characteristics as a 
function of collector current for 
2NS301. 2N5302, and 2NS303. 



139 



POWER TRANSISTORS 



2N5301, 2N5302, 2N5303 

ELECTRICAL CHARACTERISTICS* at Case Temperature (Tq)= 25° C unless otherwise specified 



CHARAC- 


TEST CONDITIONS 


LIMITS 




VOLTAGE 


CURRENT 










TERISTIC 


Vdc 


Adc 


2N5301 


2N5302 


2N5303 


UNITS 


V C E 


V B E 


•c 


>B 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 




40" 








- 


1 


- 


- 


- 


- 




'CBO 


60" 
80* 








: 


_ 


: 


1 


: 


1 






40 


-1.5 






- 


1 


- 


- 


- 


- 


'CEX 


60 


-1.5 






- 


- 


- 


1 


- 


- 






80 


-1.5 






- 


- 


- 


- 


- 


1 


mA 


'CEX 


40 


-1.5 






- 


10 


- 


- 


. - 


- 


T C = 


60 


-1.5 






- 


- 


- 


10 


- 


- 




150°C 


80 


-1.5 






- 


- 


- 


- 


- 


10 






40 








- 


5 


- 


- 


- 


- 


'ceo 


60 
80 








_ 


_ 


_ 


5 


_ 


5 




'ebo 




-5 






- 


5 


- 


5 


- 


5 




2 




lb 




40 


- 


40 


- 


40 


— 






2 




10b 






- 


- 


- 


15 


60 




"FE 


3 
2 
3 




15b 
20 b 
30 b 




15 
5 


60 


15 
5 


60 


5 


- 




V CE0 (sus) 






0.2 




40 


- 


60 


- 


80 


- 






2 




10 b 




_ 


- 


_ 


— 


_ 


1.5 


V B E 


2 

4 
4 




15b 
20 b 
30 b 




- 


1.7 
3 


- 


1.7 
3 


- 


2.5 










10 b 


1 


- 


1.7 


- 


1.7 


_ 


1.7 


V BE (sat) 






15b 
20 b 


1.5 
2 


- 


1.8 
2.5 


— 


1.8 
2.5 


— 


2 


V 








20 b 


4 


- 


- 


- 


- 


- 


2.5 










10 b 


1 


- 


0.75 


- 


0.75 


- 


1 








15b 


1.5 


- 


- 


- 


- 


- 


1.5 




V CE (sat) 






20 b 
20 b 
30 b 


2 


- 


2 


- 


2 


- 


- 










4 
6 


- 


3 


- 


3 


- 


2 




's/b 
tp= 1 s 


20 








10 


_ 


10 


_ 


10 


_ 


A 


nonrep. 
























E S/b 
L=125/iH, 
























R BE = 51fi 




-1.5 


10 


- 


6.25 


- 


6.25 


- 


6.25 


- 


mJ 


Ihfel 
f=1MHz 


10 




1 


- 


2 


- 


2 


- 


2 


- 




h fe 
f=1kHz 


10 




1 


- 


40 


- 


40 


- 


40 


- 


t r (SeeFig.8) , 


vcc = 




10 


1 


- 


1 


- 


1 


- 


1 




*$ 


30 




10 


1 c 


- 


2 


- 


2 


- 


2 


Ms 


tf 






10 


1 c 


- 


1 


- 


1 


- 


1 




R 0JC 


20 




5 


- 


- 


0.875 


- 


0.875 


- 


0.875 


°c/w 



* In accordance with JEDEC registration data format JS-6 RDF-1 . " Vq B b Pulsed; pulse duration = 300ms, 

c | _ _• duty factor = 1 .8% 

Bi Bo 



140. 



POWER TRANSISTORS 



2N5301, 2N5302, 2N5303 



|lC< , lB ,| 0)t}ftffl||l||||||||||l|]|l||l|||||||||||llllllllllllllllTO 

,o [ttttti i iiii iiiiiiiiiiiiiiiiii iiiiiiiiiiiiiHiiiiiiiiiiyymiiiiifffl 


1 "1 II IIIIIIIIIIIIIIUIIIIllllLo^ni 
z \\\§\\\\\\\\\\\\W*flF& 

H lllilllllllllllllllllll'-? &)?_*& 

i ffttiiP jjjfjWB 
§ "IBJi 1 

o i iiiifffffn 1 1 1 11 1 1 






5 Rffilnl)lllllllll llllllllllllllllll 







COLLECTOR-TO-EMITTER SATURATION VOLTASE [VceIwO] — V 

Fig. 4 — Typical saturation voltage characteristics 
for 2NS301, 2N5302, and 2N5303. 





COLLECTOR-TO-EMITTER VOLTAGE f ^cg >-^V ffft| [ || ||| j|| [|[] 


30 






< 25 


ffj 






tIHI 111 llllttJJunP^iMfir 
















K 2° 


lllllllllllllllllffl g lll 




If 




















) Mr* Jllllll ilill 




K 








w \\h\ 1 






| |||||||||||H|||/3|||||||||||||| 






















5 







BASE-TO-EMITTER VOLTASE (VbeI— V 

Fig. 5 - Typical transfer characreristics for 
2N5301, 2NS302, and 2NS303. 



8 
6 

«. 

I 2 


t C0LLECT0R SUPPLY VOLTAGE (Vccl-30V 










IC/lB'IO 
























l r 








































% 6 














































•d 
















0.0I 











































6 8 ,q 2 4 6 8 

COLLECTOR CURRENT U C >— A 

f /g. 6 — Typical delay-time and rise-time charac- 
teristics as a function of collector current 
for 2NS301, 2NS302, and 2NS303. 



X 6 

i 

Ml 2 


.COLLECTOR SUPPLY VOLTAGE (Vccl"»V 






IB|— iBj 
IC/lB'IO 
CASE TEMPERATURE (T C )>25'C 








































^tt 






































8 " 




, 


















£ 


























I * 

< 2 
0.1 














































2 




B 


» 




2 




6 


8 10 



COLLECTOR CURRENT dc)— A 

Fig. 7 — Typical storage-time and fall-time charac- 
teristics as a function of collector current 
for 2NS301. 2NS302, and 2N5303. 



141 



POWER TRANSISTORS 



2N5320-2N5323 



Complementary N-P-N & P-N-P Silicon 
Power Transistors 



General-Purpose Types for Small-Signal, Medium-Power Applications 



RCA-2N5320, 2N5321, 2N5322 and 2N5323 are double- 
diffused epitaxial-planar silicon power transistors intended for 
small-signal medium-power applications. The 2N5320 and 
2N5321 n-p-n types are actually high-current, high-dissipation 
versions of the 2N2102 with all of the salinet features of that 
device. The 2N5322 and 2N5323, p-n-p complements of the 
2N5320 and 2N5321, are actually high-current, high-power 



versions of the 2N4036 with all of its additional outstanding 

features. (Technical data on the 2N2I02 and 2N4036 are 

shown on pages 29 and 71, respectively). 

The devices are supplied in the JEDEC TO-39 hermetic 

package. 



MAXIMUM RATINGS, Absolute-Maximum Values: 

• COLLECTOR TO-BASE VOLTAGE V C 80 

COLLECTOR TO EMITTER SUSTAINING VOLTAGE: 

With 1.5 volts IVbe) of reverse bias VcEV' sus ) 

With external base to emitter resistance 

(R B E>=100tt VcER(sus) 

With base open VcEO< s "sl 

• EMITTER TO BASE VOLTAGE V E BO 

• COLLECTOR CURRENT I c 

• BASE CURRENT | B 

. TRANSISTOR DISSIPATION: P T 

At case temperatures up to 25° C 

At case temperatures above 25° C 

• TEMPERATURE RANGE: 

Storage and operating Uunction) « 

. LEAD TEMPERATURE (During soldering): 
At distance_> 1/32 in. (0.8 mm) from 
seating plane for 10 s max , 

• In accordance with JEDEC registration data format (JS-6-RDF-1) 
For p-n-p devices, voltage and current values are negative. 



2N5321 

75 



2N5323 2N5320 

75 100 



2N5322 ' 

100 



65 


90 


90 


50 


75 


-75 


5 


7 


7 



Figs. 2 & 5 
Derate linearly ai 0.057 W/OC 



Features: 

■ 2N5322 ? P-N-P f 2N5 32 
2N5323 ] Complements of : [ 2N5321 

■ Maximum safe area-of-operation curves 

■ Planar construction for low-noise and 

low-leakage characteristics 

■ Low saturation voltage 

■ High beta at high collector current 



TERMINAL DESIGNATIONS 




92CS-275I2 
JEDEC TO-39 



C0LLECTOR-TO. EMITTER VOLTAGE (V ce ) - 4V 














P 140 

£ m 

1 M 

5 60 

i " 
































































































* 




\ 


















--■''H7 






V 














x' 




Us 




*r1 


r" 


- 


^s 


ll 






,* 


x '_ .,u§ 












\ 










►»» 


*->^ 
















\ 


























\ 
































„ 


. 




i 












* 








, 







COLLECTO* CtMIKHT (l c >- 



Fig. 1 - Typical static beta characteristics 
for types 2N5320 and 2N5321. 



10 = 

8h 

6; 
4 : 




iili 


ate 




4it 


i 


i+ttti 


8tt 


liftttlM 




fff 




ii = " :::: S 




























W- 


igll 


ill 




1 


SI 












HiiiHiil; 


M= 


=111111 


ilp! 




< 








i'Ws 


=T= 






= 4^!^Jj; :r 










* 2- 




EfrPjff 




fm 


T 






EffiBfti 








Bllllllp 


z 

HI 

or 
or 


" :f 1 




Iff 


mm 










'"Tr' 1 






171 






























t ttt T 


III 
















1441+ +■ 


o 

or 8i 


























o 

UJ 

j 








■ 






















cJ 4 : 

o 




































lfl»! 


2 


















ir j-l"- 






ffffj^---"t : 




-Ihi 




Ml 


T TyTi TTTTj 






T 3 


sGfffif 


"Til 


flf 




]M:::::::t 


T' 


rirrr 


i ni± 


1 111 inn 


T 


1 1 1 






r'TT " 


lllll 




fill 1, „ . , | , 



2 4 6 8 |0 2 4 6 8 |00 2 

COLLECTOR-TO-EMITTER VOLTAGE (VCE)— V 

»2CS-t75«*e 

Fig. 2 - Maximum operating areas for 2NS320 and 2N5321. 



COLLECTOtTOEUTTEII VOLTAGE <V n |- -<V 














120 
ff 10 

Z to 

I 

^ 40 
i 
* 20 

X 














1 












-' 




1 








" V N 


















Mil 










»"C 




\ 


























" 


"-. 


\ 








S 
























\ 






























\ 






















1 








V 







COLLECTO* CUMENT (lc>- 



92CS-ISO04RI 



F/'gr. 3 - Typical static beta characteristics 
for 2N5322 and 2N5223. 



t 

| 600 

<* 
200 


C0LLECT0RT0EMTTER VOLTAGE <V ci ) . IV | ' ' 1 1 ' 1 1 1 1 1 j 1 i i 1 i 1 


M. 




l 










1 










HH 




Iff 


; j| 1 1 HH1II1 HlHilrffl 


T.~ 


~ 


HH 


S? 




F%:^ 




~ 










ft 


































VmI 






9: 





BASE-T0.EHITTER VOLTAGE <V M ) - V 



R2CS-ISOOSRI 



Fig. 4 - Typical transfer characteristics 
for 2N5320 and 2N5321. 



142 



POWER TRANSISTORS 



2N5320-2N5323 



ILICTHCAL CNARACTIRISTICI, Can T«Mtfth 


r« (T C ) - 


25° C Unload OmerwJio Saec<f7e« 






CHARACTERISTIC 


Symbol 


TEST CONDITIONS 


LIMITS 


Units 


DC 

Voltage 

V 


DC 

Current 

mA 


Type 
2N5320 


Type 
2N5321 


Type 
2N5322 


Type 
2N5323 


VCB 


VCE 


Vbe 


IC 


IB 


Mm. 


Max 


Mm. 


Max. 


Min. 


Max. 


Mm. 


Max. 


Collector-Cutoff Current: 
With base open (Ig ■ 0) 


ICBO 


BO 
60 
•80 












0.5 






- 


■0.5 






«iA 


With base-emitter 
Junction reverse biased 


! C£X 




100 

75 

-100 

-75 


•1.5 

•1.5 

1.5 

LA 








0.1 




o'l 




•0.1 




-01 


mA 


T C M50°C 




70 
45 
■70 
-45 


-1.5 
-1.5 
1.5 
1.5 








5 








•5 




.5 


inA 


Emitter-Cutoff Current 


lEBO 






-7 

-5 

7 

5 












n.i 




0.1 


: 


-0.1 




-0.1 


mA 






-5 

-4 

5 

4 




0j 
0' 







0! 




0.5 




•01 




5 


„A 


Collectw-to-Emittei 
Breakdown Voltage 
Witt) base-emitter junction 
. ieveise biascc 


<ibr;cev 






•1.5 
1.5 


01 
01 




100 




75 




•100 




/'5 




V 


Colleclor-to-Emitter 
Sustaining Voltage: 
With external base-to 
emitter resistance 
'RBE'-lOOfi 


VcER'Sus." 








100 
•100 




90 




65 




90 




•65 




V 


With base open 


VCEO'S" 5 '" 








100 
■100 






75 




50 








•5U 




V 


Collectorto Emitter 
Saturation Voltage 


VcE'Sat. 








500 
•500 


50 
■50 




05 




0.8 




•0.7 




■1.2 


V 


Baseto-Eaitter Voltage 


VBE 




4 
-4 




500 
•500 






i.i 




1.4 




•1.1 




•1.4 


V 


DC Forward Current 
Transfer Ratio 


Set NOTE 




4 
-4 

2 
-2 




500 
■500 
1000 
•1000 




30 
10 


130 


40 


250 


30 


130 


40 


250 




Gain-Bandwidth Product 


<T 




4 
•4 




50 
•50 




50 




50 








_5P_ 




MHZ 


Magnitude of common-emitter, 
small-signal, short circuit, 
forward current transfer ratio 
(1-10 MHZ) 


><e| 




4 

•4 




50 
-50 




5 


- 


5 


- 




- 


5 


- 




Second Breakdown Collector 
Current* 
(With base forward biased) 


( S/b 




50 
•35 








200 




200 




■285 




285 




mA 


Sat. Switching Time: 
Turn-on Time 


ton 




30 
■30 




500 
-500 


50 
•50 




80 




80 




100 i 




100 


rts . 


Turn-off Time 


toff 




30 
•30 




500 
-500 


50 
•50 




800 




800 


: 


1000 




1000 


ns 


Thermal Resistance: 
junction-to-Case 


R 0JC 












. 


17.5 


. 


17.5 




17.5 


. 


17.5 


"CM 


Junction-to-Ambient 


n ejA 












- 


150 




150 




150 




150 


"C/l 



* In accordance with JEDEC registration data format (JS-6-RDF-1) 

* For p-n-p davicet, voltaga and currant value* are negative. 

CAUTION: The sustaining voltages VcEOO"*) and Vcer(«u«) c Pulsed; 0.4i non-repetitive pulse. 
MOST NOT bt measured on a curve tracer. * l$ b l% w^t n n, cment.et which second breakdown occurs at 

* Pulsed; pulse duration • 300 h*. duty rector < 0.02. junction forward! biased for transistor operation in the active refion. 



143 



POWER TRANSISTORS 



2N5320-2N5323 




I -10 -K>0 

COLLECTOR-TO- EMITTER VOLTAGE (V CE ) V 

92CS-I7947 

Fig. 5 - Maximum operating areas for 2NS322 and 2N5323. 





COLLKTM ||||l||||| 




1 -MO 








m 










s 








IP 










i- 




















'- 














w 






















.0 








-T 




-1 


- 


i'i""""" 







MSI.T»nuTTR WtT«£ (V W ). V 

MCS-iSOOSftl 

Fig. 6 — Typical transfer characteristics 
for 2NS322 and 2NS323. 




MSC.TO-MITTM VOLTMC (V M ). 



ncs-isooom 



Fig. 7 — Typical input characterisitcs for 
2N5322 and 2N5323. 




BASETO-EMfTTER VOLTAGE (V BE ). 



92CS-ISOOIBI 



Fig. 8 — Typical input characteristics 
for 2N5320 and 2N5321. 



C«g TEMPERATURE <T C I ■ H *C S 
Iftttllllllllllllll llllllllll 






[^(ji'iO^ 


7 ° j in 1 1 m 








1 1 gjff 


i °«| IIIIIJfflJtitiitnlTTlrm 








li 


§ llliflllllllffnnfnM 










li^^Hl 








4 S 


u ° a iiMJlliiiilllilllilllllJi 




MStCMRI 


tMT <I t l-i»A 


4"""""l" J 111111 ™ 


i 1 """" 






7 



COLLECTOft-TO-CMITTCR V0LTA0I IV CC )— V 

MCS-IMOtftl 

Fig. 9 — Typical output characteristics 
for 2NS320 and 2N5321. 




COU.ICT<M-TO-UaTTEft VCLTMC IVfcfl — v 

wea-iMorw 

Fig. 10— Typical output characteristics 
for 2N5322 and 2N5323. 



144 



.POWER TRANSISTORS 



2N5415, 2N5416, RCS880-RCS882 



Silicon P-N-P High-Voltage Transistors 

For High-Speed Switching and Linear-Amplifier 

Applications in Military, Industrial and Commercial Equipment 



The RCA-2N5415, 2N5416and RCS880, 
RCS881, and RCS882 are silicon p-n-p 
transistors with high breakdown voltages, 
high frequency response, and fast switch- 
ing speeds. All of these types are supplied 
in the JEDEC TO-39 hermetic package. 



These transistors differ primarily in their 
voltage ratings. Typical applications in- 
clude high-voltage differential and opera- 
tional amplifiers; high-voltage inverters; 
and high-voltage, low-current switching 
and series regulators. 



MAXIMUM RATINGS, Absoluts-Maximum Values: 

'COLLECTOR-TO-BASE VOLTAGE V CB0 

COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: 

With axtamal baaa-to-amlttar refinance (Rbe> " 50 Ji . . VcerI"") 

* With bate own V ceo (iui) 

•EMITTER-TO-BASE VOLTAGE V E80 

•COLLECTOR CURRENT I c 

•BASE CURRENT I B 

•TRANSISTOR DISSIPATION: P T 

At om temperatures up to 2S°C 

At caw temperetures abova 25°C 

At ambient temperatures up to 50°C 

At ambiant temparaturat abova 50°C . Darate linaarly at 

•TEMPERATURE RANGE: 

Storaga and Oparatlng (Junctionl 

•LEAD TEMPERATURE (During soldering): 

At diitanca > 1/32 In. (0.8 mm) from Mating plana for 
10 i max 

•2N-Sarlai types In accordanca with JEOEC ragiitration data format (JS-9 RDF*) 



2NS415 2N5416 RCS880 RCS881 RCS882 



-360 
-300 



- Darata linaarly to 200°C - 
1 0.75 0.76 



65 to +200 



-360 
-300 



Features: 

■ 2N5415: p-n-p complement of 
2N3440 

■ 2N541 5: p-n-p complement of 
2N3439 

■ Maximum safe-area-of-operation 
curves 

■ High voltage ratings: 

VcBO = "350 V max. (2N5416) 

VcEO(sus) = -300 V max. (2N5416, 

RCS882) 

-250 V max. (RCS881) 
-200 V max. (2N5415) 
-150 V max. (RCS880) 



TERMINAL DESIGNATIONS 




92CS-275I2 
JEDEC TO-39 




COLLECTOR-TO-EMITTER VOLTAGE (V CE )-V 

92CS-I7668RI 

Fig. t— Maximum safe operating areas for 2N5415 and 2N5416. 



2 SO 
I n 

£ » 

e 


COLLECTOR-TO-EMITTER VOLTAGE IVce) *'0 V 














































4 








\ 


























\ 




























| 




















£- * 




















IP 


**a 








\ 








-C* 


f* 


t* 






,vr c 


























1 


























^ 


L 




1 


















N 


\ 





COLLECTOR CURREHT «c) — nA 



' '-\« 



Fig. 2-Typical dc beta characteristics for all 
types. 





COLLECTOR T0-EWTTER VOLTAGE (V ce 




ov 




£-~ 




:':.-:- 








; 


1:1:!:;; 


(-=- 


=ijn# 


H= 








:::: 




:::r 


1 -BO 
| -60 

s 








- 


«. t 


':':*. 




■ *|= 




:r_- 


*= 




;"n 


\r 






^■ik 


-- 






N 


-h 




K-H 


-= 


















:~i: 


u-^: 


=1 


;[-: 




:iH 
























-.:■ 


H | 


~ 


r5: 




i::: 


3. 














:-: 


El 










:::- 


K 




'':'.' 




3; 


r.: 


irij 






:-=h 


EHl 


:•-: 






=rJ 














~- 




~£ 




I- 












:'": 


•F 




Qfc 










=: 


:-"' 


"-" 


:.— 




:.--: 


Sk 


F= 




'^ 


"F 


t* 


w 






ir^ 


r= 


: i1-" 


a^; 


Till 



-0.2 -0.4 -0.6 -08 -10 

BASE-TO-EMITTER VOLTAGE <V BE ) - V 

Fig. 3- Typical transfer characteristics for aft 
types. 



145 



POWER TRANSISTORS 



2N5415, 2N5416, RCS880-RCS882 

ELECTRICAL CHARACTERISTICS, Case Temperature (Tq) -2S»C 



CHARACTERISTIC 
SYMBOL 


f EST CONDITIONS 


\ LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
mAdc 


2N5415 


\ 
2NE 


>4t6- 


RC 


5880 


RCS881 


RCS882 


V CB 


VCE 


V BE 


»C 


"B 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


>CEO 




-250 
-160 
-100 



























- 




JUA 


'CBO 


-280 
-176 










: 


-50 












-50 






(JA 


•CEV 




-300 
-200 
-160 


1.6 
1.5 
1.5 


. 




- 


-50 


- 




- 


-100 


- 


-50 


- 




jUA 


>EBO 






6 

4 










-20 








-30 




-20 






flA 


"FE 




-10 
-10 
-10 




-60b 
-60b 
-36b 




30 


160 


30 


120 


20 


150 


20 


— 


20 


- 




Vceo'*" 1 ' 








-50 





-200« 


- 


-300« 


- 


-150* 


- 


_250» 


_ 


-3008 


_ 


V 


V CER (iui) 
<R BE )-60fi 








-50 






















- 


V 


V BE (sat) 




-10 




-60b 




- 


-1.5 


- 


-1.5 


- 


-2.5 


- 


-1.5 


- 


-1.5 


V 


V CE (set) 








-50b 


-5 


- 


-2.5 


- 


-2 


- 


-3.5 




-3 


- 


-3 


V 


h f.. 
(at 1 kHz) 




-10 




-5 




25 


- 


25 


















lhf.1 
(at 5 MHz) 




-10 




-10 




3 


- 


3 


- 


3 


- 


3 


- 


3 


- 




Ra(h )e ) 
(at 1 MHz) 




-10 




-6 




- 


300 


- 


300 


- 


- 


- 


300 


- 


300 


a 


Cib 
(at 1 MHz) 






5 







- 


76 


- 


75 


- 


- 


- 


75 


- 


75 


PF 


C b 
(at 1 MHz) 


-10 










- 


15 


- 


15 


- 


- 


- 


15 


- 


15 


PF 


'S/b 
tp - 0.4 « nonrap. 




-100 
-76 








-100 


- 


-100 


- 


- 


- 


-100 


- 


-100 


- 


mA 


tp ■ 0.2 i nonrap. 




-76 




























R0JC 












- 


17.5 


- 


17.5 


- 


23.3 j - 


23.3 


- 


23.3 


°C/W 



2N-Sariai typat in accordance with JEDEC 
registration data format (JS-9 RDF-8). 



■ CAUTION: The sustaining voltages VceO<» u « 
and Vc E r(sus) MUST NOT be measured on a 
curve tracer. 



b Pulsed: Pulse - 300 jus; duty factor <2%. 



1 "1 


| OC t)ET» U 


e' 


•'■'°i 




I :; 1 

N 

it ""I 








^ssfTTTiHimiiuiiiiumu 

^IllllrSllllllllllllmn 


H 

t -O.IH 

1 -o.«B 














a ~ 0A m 










-°-»S 











COLLECTOR CURRENT del — »* 



it 

i" 

i. 

I a 

i N 

9 


collictortwjutth voltms (vet) 


.10 




























































.. 




























V 


























^ 




























y 


























\ 




































































































































1 


























l\ 











COLLECTOR CUHMHT lie) - mt 



Fig. 4-Typlcel collector-to-emitter saturation Fig. 5-Typlcal gain-bandwidth product for all 
voltage for all typat. types. 



1 

I 

i" 

S 0.. 

s 

0.2 




PULSE OURHTION • 90 p> llllllllllllllf 
REPETITION RATE • 100 Hi II 1 1 llll lllll 1 
COLLECTOR SUPPLY VOLTAOE IV r1 -l-IOOlrt |||||||||||[| 
CASE TEMP (T C )'2S'C II I lllll llll It 

I c /Ii-IOI tl .I,j §§|||||| 












■«J 


-f 


P 
















« 


St 























20 40 SO K 1 00 110 

COLLECTOK CURRENT llcl— 1»« 

MCtrlTIIIR 



Fig. 6-Typical turn-on time characteristic for 
2NS41Sand2NS41S. 



146. 



POWER TRANSISTORS 



2N5415, 2N5416, RCS880-RCS882 





♦0 60 80 100 110 

COLLECTOR CURRENT del — mA 

S2CS-I7SI4 

Fig. 8— Typical storage-time characteristic 
for2NS415and2N5416. 



-K> -I00 -I50 

COLLECTOR-TO-EMITTER VOLTAGE (V CE )—V 92CS-2468S 



Fig. 7— Maximum safe operating areas tor RCS880. 




-K) -KX3 -300 

COLLECTOR-TO-EMITTER VOLTAGE (Vce>— V 



92CS-24693RI 




COLLECTOR CURRENT (If;) — mA 



Fig. 10— Typical fall-time characteristic for 
2N5415 and 2N5416 



i 
i 

i 

X 
» 


2.3 
2 

I.9 

0.3 




ss 
















REPETITION RATE'IOOW 

COLLECTOR SUPPLY VOLTAGE (V cc )'-I00 V 

CASE TEMPERATURE ITc)-29*C 

IC'I B -'OIe,'lB 2 










% 




iij 




%£ 


*$ 
















:~ 




&P 


n 












r^ 


r.'.: 


'- A 


":: 


§ 














m 


VM 












^i 


it I 


W IH 




IV 


P 














BHI 








•ifi 












j': : 














VT 


it- 










'rift 


' f ii 










:::• 








Hi' 












; P:~ 




si 












■■; 


m 


m 


3H 






tW 






tflffmffff^ 






Hff 



-20 -«0 -€C -»0 -100 

COLLECTOR CURRENT del— KlA 



92CS-24M9 



Fig. 9-Maximum safe operating areas for RCS881 and RCS882. 



Fig. 



1 1- Typical saturated switching times for 
RCS880. RCS881 and RCS882. 



,147 



POWER TRANSISTORS. 



2N5490, 2N5491, 2N5492, 2N5493, 2N5494, 2N5495, 2N5496, 2N5497 

Hometaxial-Base, Silicon N-P-N 
VERSAWATT Transistors 

General-Purpose Types for Medium-Power Switching and Amplifier Applications in 
Military, Industrial, and Commercial Equipment 



RCA-2N5490, 2N5491, 2N5492. 2N5493, 
2N5494, 2N5495, 2N5496 and 2N5497* 
are hometaxial-base silicon n-p-n transistors. 
They are intended for a wide variety of 
medium-power switching and amplifier appli- 
cations, such as series and shunt regulators 
and driver and output stages of high-fidelity 
amplifiers. 

Types 2N5491, 2N5493, 2N5495, and 2N- 
5497 have formed emitter and base leads for 
insertion into TO-66 sockets. Types 2N5490, 
2N5492, 2N5494, and 2N5496 are elec- 
trically identical to the 2N5491, 2N5493. 
2N5495,and 2N5497 but have straight leads. 



Maximum Ratings, Absolute-Maximum Value*: 

COLLKCTUR -TO-BASE VOLTAGE \,H () 

COLLEt'TOR-TO-EMlTTER SI STAINING VOLTAGE: 

With -1.5 volts <Vj}|,-) of reverse bias V,i,\(sus> 

With external base-to-enntter resistance <RbK' I'M).: . V ( ^Isusi 
With base open \' ( |. ( )(9us) 

EMITTER-TO-BASE VOLTAGE V K i u) 

COLLECTOR CURRENT 1 ( . 

BASE CURRENT \ H 

TRANSISTOR DISSIPATION: p.,. 

At case temperatures up to 25' C" 

At ambient temperatures up to 25'V 

At ease temperatures above 25°C Derate linr 

At ambient temperatures above 25"C 

TEMPERATURE RANGE: 

Storage & Operating (Junction) 

LEAD TEMPERATURE (Durinn Soldering). 

At distance > 1/8 in. <3.17 mm) from cm so for 10s max ... 



These plastic-package power transistors differ 
in voltage ratings and in the currents at which 
the parameters are controlled. 

•Formerly RCA Dev. Nos. TA7317, TA7318, 
TA7315, TA7316, TA7313, TA7314, TA7311, 
TA7312, respectively. 



FEATURES 

• Low saturation voltage— 
V CE (sot) = 1 V max. at l c = 2 A (2N5490, 2N5491) 

= 1 V max. at lc = 2.5 A (2N5492, 2N5493) 
= 1 V max. at l c = 3 A (2N5494, 2N5495) 
= 1 V max. at lc = 3.5 A (2N5496, 2N5497) 

• VERSAWATT package (molded silicone plastic) 
•Maximum safe-area-of-operation curves specified for 

DC and pulse operation 



TERMINAL DESIGNATIONS 




BOTTOM VIEW 



2N54yu 
2N5491 
2N5494 
2N5495 

(Ml 



2N5492 
2N5493 



2N5496 
2N5497 



KCS-27SI9 

JEDEC TO-220AB 
2N5490 2N5494 
2N5492 2N5496 



40 

3 




5 
3 
50 

.8 


70 

3 

50 
1.8 


\' 
V 
A 
A 

W 
W 


( FLANGE V 


-u — ' I 

ol 

I 

_n I 




50 

1.8 


BOTTOM VIEW MC s-27 S 2o 




irly at 0.4 W 
Derate 


"C 
lint 


•r s 

arl> 


ee Figs. 1 & 2 
at 0.0144 W "C 


JEDEC TO-220AA 












2N5491 2N5495 




(>5 


to 


50 ►» 


"c 


2N5493 2N5497 















IT 

■a 

is 

a a 



























in ia m in 



EFFECTIVE CASE TEW. M CASE TEIT. (T tF F M JcMC 

Fig. 1 - Derating curve for type* 2N5490 through 2N5497 
inclusive. 



CASE TEMPERATURE (!<;)• 25* C NORMALIZED POWER 

(CURVES MUST BE DERATED LINEARLY MULTIPLIER — 1 

WITH INCREASE IN TEMPERATUREI is 00 '"-] 

.. ... Pin ^F QPfRATiON FOP 250 **hl 


S 4 
































^ "S^L> 




^rf 


V 


















\<i 
























°>sS 


^^7 






'2 3 

s i.e 


















^ 
















l 




^ 




^ 


t 


d « 








- 


C2N5490.2 
2N5494 .2 


N549l,-= 








-t 




















i 










~l 


vceo m «* 










i 










































Vceo MAX 
(2N5496.2 


■70V 








i 




N5497) 




























i 


3 













COLLECTOR-TO-EMITTER VOLTS ( 



Fig. 2 — Mox/mum operating areas for types 2H5490 
through 2NS497 inclusive. 



g 85 
P 80 

ll 75 
fej 70 

sf " 
So «o 
il » 

gB 50 
u 45 

8 40 
35 


COLLECTOR MILLIAMPERES (I c )-IC0 
CASE TEMPERATURE (T c 1 ■ 25*C 












V C ER (2N5496 8 2N5497) 














1 














































vceo 




VCER « 


N54 


92 a 2 


N54 


93) 








" 




























































v C 







VCER <2 


NS494 a 2 


N54 


95) 


















2N 


S49 


o a 


2N 


5' 


9 


) 












































VCE 





















1 










_] 





















n* 




6 


o 3 




6 


in" 







6ASE-T0-EMITTER RESISTANCE IRbe) — OHMS 

Fig. 3 — Collector-to-emitter sustaining voltage charac- 
teristics for types 2NS490 through 2N5497 inclusive. 



148 



POWER TRANSISTORS 



2N5490, 2N5491, 2N5492, 2N5493, 2N5494, 2N5495, 2N5496, 2N5497 



ELECTRICAL CHARACTERISTICS. Case Temperature (Tq) - 25°C Unless Otherwise Specified 



Characteristic 


Symbol 


TEST CONDITIONS 


LIMITS 


Units 


DC 

Voltage 

(V) 


., Types 

DC 2N5496 2 
Current (A) 2N5W ; 


Types 
N5494 
N5495 


Types 
2N5492 
2N5493 


Types 
2N5490 
2N5491 


V CE 


V B E 


'c 


B Mi 


i. Max. Mi 


n. Max. 


Min. 


Max. 


Min. 


Max. 


Collector-Cutoff Current 
With base-emitter junction 
reverse biased 


! CEV 


85 
55 
70 


-1.5 
-1.5 
-1.5 






1 - 












mA 


'CEV 

(T c = 150°C) 


85 
55 
70 


-1.5 
-1.5 
-1.5 


















IDA 


Collector-Cutoff Current 
With external base-to-emitter 
resistance (R BE ) = 100 fi 


'CER 


70 
40 
55 








0.5 - 


0.5 




0.5 






mA 


'CER 

(Tc = 150OC) 


70 
40 
55 








3.5 - 


3.5 




3.5 




5 


mA 


Emitter-Cutoff Current 


'ebo 




-5 
















1 


mA 


DC Forward-Current Transfer Ratio 


"FE e 


4 
4 
4 
4 




W 

3 
2.5 

2 


2 


J 166 

- 21 


D 100 


20 


100 


20 


100 




Collector-to-Emitter Sustaining 
Voltage: 
With base open 


V C Efj(**>* 






0.1 


7 


- 4 


• 


55 




40 




V 


With external base-to-emitter 
resistance (R BE ) = 100 fi 


V CER (susf 






0.1 


8 


- 5 


- 


65 




50 




V 


With base-emitter junction 
reverse biased 


V CEV (sus) e 




-1.5 


0.1 


9 


- 6 


- 


75 




60 




V 


Base-to-Emitter Voltage 


v B e c 


4 
4 
4 
4 




3.5 
3 

2.5 
2 




1.7 






1.3 




1.1 


V 


Collector-to-Emitter 
Saturation Voltage 


VCE^')' 






3.5 

3 
2.5 

2 


0.35 
0.3 
0.25 
0.2 


1 












V 


Gain-Bandwidth Product 


f T 


4 




0.5 





.8 - 


.8 - 


0.8 




0.8 




MHz 


Sat. Switching Time: 
Turn- On 


•on 


V CC " 30 




3.5 
3 

2.5 
2 


0.35° 
0.3° 

0.25° 
0.2 


5 






5 




5 


MS 


Turn-Off 


•off 


V C C " 30 




3.5 
3 

2.5 
2 


0.35 b 
0.3* 

0.25 b 
0.2 


- 15 






15 




15 


n* 


Thermal Resistance: 
Junction-to-Case 


8 )-C 










- 2.5 


- 2.5 




2.5 




2.5 


°c/w 


Junction-to- Ambient 


*J-A 










- 70 


- 70 




70 




70 


°c/w 



' Ig, value (turn-on dim current). fc !_ value (tum-ofl base cutient). c pulsed, puis* duration = 300 m». o»ty facta ' 



.149 



POWER TRANSISTORS 



2N5490, 2N5491, 2N5492, 2N5493, 2N5494, 2N5495, 2N5496, 2N5497 



I00 

5£eo 

20 



COLLECTOR-TO-EMITTER VOLTS (VccM 








































































t 


r 




A 


iS 


C^. 


^ 


















/ 


'I 




4& 


f\ 










V 














•5 
















V 
\ 
































y 


\ 




00 


01 






e 


ot 






a 


31 






' 


. 






"io 



COLLECTOR AMPERES (Ic) stes-wm 

Fig.4 ■ Typical static beta characteristics for typos 
2HS49Q through 2N5493 inclusive. 



120 
Z-IOO 

yo eo 

Is 

^£60 

20 



COLLECTOR-TO-EMITTER VOLTS (V CE )-4 






































































■<£ 


c^ x 


-"■ 


























,o«. ,( -_ 




^ 












^ 


£ 


Vf 










\ 


c 

1 
















































































V. 







































COLLECTOR AMPERES (Icl 



120 
5-100 

|*60 

cLo 

20 



COLLECTOR 


-TO- EMITTER 


VOLTS (Vce)'< 






















• 


'■" 






^> 
































fr 


£ 






























\ 




£ 


& 


























\ 
























































\ 





Fig.5 • Typical static beta characteristics for typos 
2H5494 and 2NS495. 



COLLECTOR AMPERES (Ic) mcS-i497» 

Fig. 6 ■ Typical static bota characteristics for typos 
2N5496ond2NS497. 



3 24 
1 
-p- 22 

~ 2 
g 16 

il 12 

m 06 

i 06 

S 04 

02 

9 


COLLECTOR-TO-EMITTER VOLTS (V CE , -4 
CASE TEMPERATURE {Tq) 'Z5*C 


























a& 




























fa 
























St 




x»r 










s 


s 










^ 


bv r^ 








> 


















"*r> s 


k 


























e ^ 
























\ 


























fyN 




























'V 
















































































































^ 


2 



COLLECTOR AMPERES (I c > 




CASE TEMPERATURE (T C )'25'C tiitj 


»ff 






fis 








W.':rl 


:::: 








































: - 




~ 


UOt 
































































4 

2 3 

X 
1 ' 










TTr 




















iiii 










60 










::;: 


:■:■. 










JJj£ 








120 






Pn 










S3 












100 
60 
60 
40 


















*T?T 






ti^ 








:::: 








:::: 






fttf 








rT 


!!■! 


i!.. 




[;:iT|Uji 


;!u 








"4 


H: 








W 












"ft 













































Fig. 7 - Typical gain-bandwidth product for typos 2N5490 
through 2NS497 inclusive. 



COLLECTOR-TO-EMITTER VOLTS (V CE ) SKS -|4»77 



Fig.8 - Typical output characteristics for typos 2NS494 
through 2NS497 inclusive. 



0.2 0.4 0.6 0.8 

COLLECTOR-TO-EMITTER VOLTS (VCE> 92 cs-i4989 

Fig. 9 • Typical output characteristics for types 2HS494 
and 2N5495. 




COLLECTOR-TO-EMITTER VOLTS (Vcj) 92CI-I4979 



Fig. 10 - Typical output characteristics tor typo* 2M5490 
through 2N5493 inclusive. 

















































600 
500 


























w\ 














































HI Jt- 






















































* 500 












-|-|- 1 1 1 1 
















































s±- 








d 








"H~t" 










< 
• 100 








nws 



























































































































BASE-TO-EMITTER VOLTS (V 8E ) 







ECT 




TO 




VOLTSIVc 


E> 




































, IT 




■Mi 




























lifaoo 














■"°rf 


TT 






























£400 






























































































-tt& 






































+ -*r 


























$200 












Wrffl 


*W 




















,00 










l 


Yfyft 
































± 







BASE-TO- EMITTER VOLTS (Vbj) 92CS-I4M9 



Fig.ll ■ Typical input characteristics for typos 2H5494 Fig. 12 ■ Typical input characteristics for types 2H5490 

through 2H5497 inclusive. through 2N5493 inclusive. 



COLLECTOR-TO-EMITTER VOLTS (VrpM (+ 


i±rl- 




-Mil 


4jtr 


J. J 1 1 r.± 


::::::rp::: 


-fff -H- 








6 :-::: 










**"t 










4-1 U 
























4+n' 


-4 -+- 
























t-M-1- 


-lU- 


■ T— 










H h 




~-W£b 


'ViT 


1T" 


44+-- 




« 4 - 




-ffl& 






1 1 1 1 - 








tfi^S 










£ ::::: 


± 


£v : S 


lit 


llp- 




















W?M 




l* 


.u 




p -t---~ 


X-^ ^ 




3^- 




-^ + 


-±5 


S 2 ::::: 














8 i±::: 












4|f[ 


ffit 


+■■-- 












*!•* 










-4 


- 


^ + *- 







BASE-TO-EMITTER VOLTS (VBE> 



Fig. 13 - Typical transfer chcracteristics for types 2N5494 
through 2H5497 inclusive. 




Fig.14 -1 Typical transfer characteristics for types 2HS490 
through 2HS493 inclusive. 




OS 04 

BASE-TO-EMITTER VOLTS (V BE ) 



Fig. 15 - Typical transfer characteristics for types 
2NS490 through 2H5497 inclusive. 



150. 



POWER TRANSISTORS 



2N5575, 2N5578 



High-Current, High-Power, Hometaxial- 
Base Silicon N-P-N Transistors 

For Linear and Switching Applications in 
Military, Commercial, and Industrial Equipment 

RCA-2N6575 and 2N6878• are high-current, high-power, linear regulators power-iwitching circuits, series- or shunt- 
hometaxial-base silicon n-p-n transistors. They differ in regulator driver and output stages, dc-to-dc converters, In- 
maximum voltage and current ratings. verters, control circuits, and solenoid (hammerl/relay drivers. 
These power transistors are intended for a wide variety The high-current capability (100-A peak) makes these types 
of high-current, high-power linear and switching applications particularly suitable for circuit designs that now require 
such as low- to medium-frequency amplifiers, switching and several low-current types connected in parallel. 

" ~— ~ ~ ~~ They are supplied in the Modified JEDEC TO-3 package 

Formerly RCA Ov. Not. TA7018 and TA7017, rtiptctivaly. with 0.060-1 n. Dia. Pins. 

MAXIMUM RATINGS, Absoluts-Maximum Values: 

2N567S 2NU678 

•COLLECTOR-TO-BASE VOLTAGE V CBO 70 90 V 

•COLLECTOR-TO-EMITTER VOLTAGE: CB0 80 V 

With base open, ustaining V CE0 (su.) 50 70 V 

With external base-to-emitter resistance 

<R BE >-10n8.V BE --1.6V v 70 go v 

•EMITTER-TO-BASE VOLTAGE V pao 8 8 V 

•COLLECTOR CURRENT (Continuous! l" 80 BO I 

•COLLECTOR CURRENT (Peak) g 100 gJJ * 

•BASE CURRENT (Continuous) I- 20 IS A 

•TRANSISTOR DISSIPATION: ey 

At case temperatures up to 26°C and V CE up to 25 V 300 300 W 

At case temperatures of 100°C and V CB of 25 V 150 150 W 

At case temperatures up to 25°C and V CE above 25 V S» Fig. 7 

At case temperatures above 25°C and V CE above 25 V s.e Fiji 1 & 2 

•TEMPERATURE RANGE: 

Operating (Junction) -65 to 175 °C 

Storage -66 to 200 °C 

•PIN TEMPERATURE (During Soldering): 

At distance ;> 1/32 in. (0 .8 mm) from case for 10 s max 230 °C 

• In accordance with JEDEC registration data format JS-6 RDF-1 . 



Features: 

■ Maximum safe-erea-of operation curves 

■ l S /|,-llmlt line beginning at 25 V 

■ High-current capability 

■ Low saturation voltage at high beta 

■ High-dissipation capability 

■ Low thermal resistance 

TERMINAL DESIGNATIONS 




Mcs-m>« 
ModH 1(4 JEDEC TO-3 



NOTE! CURRENT DtRATINB AT CONSTANT 
V0LTA6E APPLIES ONLY TO THE DISSIPATION 
LIMITE0 PORTION OP MAXIMUM-OPERATINe- 
AREA CURVES IFIOS 1,4100 NOT OEPATE 
THE SPECIFIED VALUE* FOR 1. MAX. 
(PULSED OR CONTINUOUS! 




25 SO 

CASE TEMPERATURE IT C I-'C 

MCS-ISOMflZ 

Fig. 1 • Dissipation derating curves for 
both types. 




COLLECTOR-TO-EMITTER VOLTS (V CE ) 



92CS-I5085R2 




COLLECTOR AMPERES del 

%KS-«o»m 

Fig. 3 ■ Typical dc beta characteristics 
for 2N5575. 




'•O.I « 
COLLECTOR AMPERES d c > 



KCS-iaoMRi 



Fig. 2 — Maximum operating areas for both types. 



Fig. 4 • Typical dc beta characteristics 
for2N5578. 



151 



POWER TRANSISTORS 



2N5575, 2N5578 



ELECTRICAL CHARACTERISTICS, At Cut Ttmptrtton (Tq) - 2S°C Unlen Othmrim SptcifM 








CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


Voltage 
Vde 


Current 
Adc 


2NS57S 


2NBS78 


V CE 


V BE 


•c 


>B 


Min. 


Mix. 


Mil, 


Max. 


CollKtor Cutoff Current: 
With bate-emitter 
junction reverse -biased 


'CEV 


60 
80 


-1.5 
-1.5 






- 


10 


- 


10 


mA 


With external bate-emitter 
resistance (Rggl-IOft 


'CER 


50 
70 








- 


10 


- 


10 


mA 


With bate-emitter 
junction reverte-biated 


'CEV„ 
IT C -150°C) 


60 
80 


-1.5 
-1.5 






- 


20 


~ 


20 


mA 


Emitter Cutoff Current 


] EBO 




-8 






- 


10 


- 


10 


mA 


Col lector-to-Emitter 
Breakdown Voltage 


V (BR»CEO 






0.2 





50 


- 


70 


- 


V 


DC Forward Current 
Transfer Ratio 


h FE 8 


3 

4 




40» 
60* 




10 


40 


10 


40 




Collector-to-Emitter 
Susteining Voltage: 
(St* Figs. S and 6) 
With bete open 


V CE0 (sus) 






0.2 




50 b 




70 b 




V 


With base-emitter 
junction reverse-biased, 
R BE -10» 


V CEX (sus) 




-1.6 


7 




70* 


- 


90° 


- 


V 


Base-to-Emitter Voltage 


VBE a 


4 
4 




40* 
60* 




_ 


3 


~ 


2.5 


V 


Collector-to-Emitter 
Seturation Voltage 


V CE (sat) a 






40* 
60* 


4 
6 ■ 


- 


2 


- 


1.5 


V 


Base-to-Emitter 

Saturation Voltage 


V BE lsat) a 






40* 
60* 


4 
6 


- 


3 


_ 


2.5 


V 


Output Capacitance: (Vcb - 10 VI 


c ob 










- 


2000 


- 


2000 


pF 


Input Capacitance 


c ,b 




-0.6 







- 


4000 


- 


4000 


pF 


Magnitude of Common- 
Emitter, Small-Signal, 
Short-Circuit Forward 
Current Transfer 
Ratio If-ftiMBiiL 


|N.| 


4 




10 




2 


- 


2 


- 




Saturated Switching 
Time (V C C - » V) 
Turn-on lime 


'ON 






40 
60 


4 
6 




15 




10 


"S 


Turn-olf time 


'OFF 






40 
60 


4 
6 


- 


15 


- 


10 


Forward-Bias 
Second- Breakdown 

Collector Current ll-lll 


*S/b 


25 








12 


- 


12 


- 


A 


Second Breakdown 
Energy (With base 
reverse -biased. 
R BE M0U. L = 33mH) 


E S/b 




-1.5 


7 




08 


- 


0.8 


- 


J 


Thermal Resistance '■ 
(Junctionto-Case) 


R »JC 










' 


0.5 


- 


0.5 


°C/W 



fjSao 

SS 75 
JS- 70 

5Ses 

ii 80 
e5 S5 

1 so 


CASE TEMPERATURE IT C I • 2S'C 














l l l 




























V CE > 
































*- 












^2N5578 








































V CE0< 


■Ul 


) 




































V CER ( »"' 






































--. 


■«-> 




^2N5S75 




i 
























"^ 


-i. 




v CE0 <,u » 


















-f 






1 1 




l 
























• 


10* 






•l 



EXTERNAL BASE-TO-EMITTER RESISTANCE IR BE > — 

9ZCS-I507IR2 

Fig.5- Collector-to-emitter sustaining 
voltage characteristics for both 
types. 




COLLECTOR-TO-EMITTER VOLTS <V C E> 



92CS-ISOS5SI 



Fig. 6 - Typical output characteristics for 
2NS575. 




•in accordanca with JEDEC raoiitratton data format JS<6 ROM. 
•Pulatd; pulH duration £ 360 fit, duty factor -0.02. 
^CAUTION: Tha sustaining voltaoat V ce0 (hjs> and V CEX (sus> MUST NOT bt maamirad on a curvt tracar. 



COLLECTOR-TO-EMITTER VOLTS <Vce> 



Fig. 7 - Typical output characteristics 
for 2N5578. 



CASE TEMPERATURE <Tcl'29*C 




29 

20 5 
19 8 
*l 

3 

9 »! 


INDUCTANCE (LI -33 mH 
















































itvi 


H 


>L 



















Hcs-isoarn 

Fig. 8 - Reverse-bias second-breakdown 
characteristics for both types. 



152 



POWER TRANSISTORS 



< 
1 100 

"b e 

H 

Z 

Ul 

K 4 

CC 

U 

IE 

O 
Ul 

_l 
-I 
o 
<■> 10 

8 
6 

4 
2 

1 


CASE TEMPERATURE (T c )»iO0«C ||| , |l ; l|l |l| II || M|l|||| i II 1 111 |l|tt|tf|t|l 
























HI 














:2N5 


575 


fe 


3ffl 










2N5578 
: T c (MA 








IU0 


L)S| 




1 






gg||]||| il" 1 hM^jllj 


-cc* 


J," 




S^^l^yiii 


"r-TU 




Hi 


S_ 


n 




8 








IffifltttTTltlf 


1 


^ffiw linn MP 








i.i. , 


-E0 

'CEC 

iKNi 


^P|I</h- LIMITED ^||j|^|j{|||^ 1 1 j 


H^E 




m; 
(r 

;: I 


X 

A 

1111 


)-50V( 

<1«70 V 

llllllll ! 


2N! 
<2I> 


575) 1 llijl : ' i iljftlMWj- 1 ; 

557e)[^mWw]| NT 







10 KX) 

COLLECTOR-TO-EMITTER VOLTAGE (V C E>" 



f/ff. 5 — Maximum operating areas for both types at 7> = 100°C. 



2N5575, 2N5578 



I00 
- 2 

1 « 

i ,J 

8 or 

2 


COLLECTOR-TO-EMITTER VOLTS lV ce )>4 














— — 3 




^# 






























. 


r^ 


















-£/ 


-f+\ 
















hf/l— , 
















i 


( **• 


















■n — 
















i 
















i 


_j 


^° 
















I s - 




































































0.9 


i. 


s 


z.s : 


3.9 « 4 


9 9 



BASE-TO-EMITTER VOLTS (V BE ) 



WC1-I3072AI 



Fig. 10 — Typical transfer characteristics for 
2NS575. 



100, 

a "i 

K * 

* z 
s 

< 1 
K • 
o • 

0.01 


COLLECTOR-TO-EMITTER VOLTS IV 


:e>'« 














£^0 
















•j 


















.1 






































-J? 
/ 


Hi 

nt 


















e 
















4 


//?»* 


















B5» 
















1 




















i 
















^o 
















-fall 


















































£ 




















c 


0.9 


1 


S 3 


2.5 3 


9.5 4 4 


9 5 



BASE-TO-EMITTER VOLTS (V BE I 

92C3-I901ORI 

Fig. 11 - Typical transfer characteristics 
for2N5S78. 




COLLECTOR-TO-EMITTER SATURATION VOLTS [Vc£(Ht>] 

92CS-IS063RI 

Fig. 12 — Typical saturation voltage 
characteristics for 2N557S. 




COLLECTOR-TO-EMITTER SATURATION VOLTS [Vee<»»l>] 

92CS-IMM2RI 

Fig. 13 - Typical saturation voltage 
characteristics for 2N5S78. 




COLLECTOR AMPERES (Ic) 

Fig. 14— Typical saturated switching 
characteristics for both types. 



153 



POWER TRANSISTORS. 



2N5632, 2N5633, 2N5634 

Silicon N-P-N Epitaxial-Base High-Power Transistors 



Rugged, Broadly Applicable Devices 
For Industrial and Commercial Use 



The RCA-2N5632, 2N5633 and 2N5634 are 
epitaxial-base silicon n-p-n transistors in- 
tended for a wide variety of high-power, 
high-current applications, such as power- 
switching circuits, driver and output stages 
for series and shunt regulators, dc-to-dc con- 
verters, inverters, and solenoid (hammer)/ 
relay drivers. 



MAXIMUM RATINGS, Absolute-Maximum Values: 



These devices differ in maximum voltage 
ratings. They are supplied in JEDEC TO- 
204MA hermetic steel packages. 



2N5632 



2N5633 



2N5634 



I V CEO 

! V CBO 

I V EBO 

„ 'cm 

» 'b 

* P T 

AtT C<25° C 

At T c > 25°C derate linearly 

* T J' T «fl •■■■ •• 

* T L at 1716 ± 1/32 in. (158 ± 0.8 mm) 

from cate for 1 s 

* In accordance with JEDEC registration data. 



100 


120 


140 


V 


100 


120 


140 


V 




7 




V 




in 




A 




1K 




A 




R 




A 




1RO 




W 




n*»R7 




W/°C 




_ -66 to 200 _ 




°C 




MR 




°C 



CAM TtMKRATURC<1c )■ tt*C| 
(CUftVM MUSTK DERATED 

LINEARLY WITH INCREASE 

IN 




< 4 • a'| % « 
no 

COLLECTOR- TO- EMITTER VOLTAGE (Vc E >-V MCM .jo5oa 

Fig. 1 — Maximum operating anas for all types. 



Features: 

■ High dissipation capability 

■ Low saturation voltages 

■ Maximum safe-area-of-operation curves 

■ Hermetically sealed JEDEC TO-3/TO- 
204MA package 

■ High gain at high current 



Applications: 

■ Series and shunt regulators 

■ High-fidelity amplifiers 

■ Power-switching circuits 

■ Solenoid drivers 



TERMINAL DESIGNATIONS 




JEDEC TO-204MA 




TS 100 liS IH IT* 200 
MM TCHMMTUM (Tel— *C 

MLI-IMM 

Fig. 2 — Current derating curve for all types. 



ZfBBBi 

K • 

; 4 
o 

i « 


COLLECTOR- T0-EMITTER V0LT4SC (V ct )'2 V 


































«£ 
























c___ 


— 


"" ■ 


"^ 


^ 










s • 

« 4 

K 










o»t 






■s: 


— - 












^5 










s> 








' 


!*»* 












\ 






















' 


A 






1 ! 

k i 


































































































' 






























» 


• 


! 


1 6 


* 


! < 


e 


• 


1 


6 • 



0.01 



100 



Fig. 



COLLECTOR CURRENT (X c )-A 

MCS-90l4f 

3 — Typical dc beta characteristics as a function 
of collector current for all types. 



154 



.POWER TRANSISTORS 



2N5632, 2N5633, 2N5634 



ELECTRICAL CHARACTERISTICS, At Case Temperature T c - 25°C 
Unless Otherwise Specified 



CHARAC- 
TERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N5632 


2N5633 


2N5634 


v C e 


v B e 


'c 


>B 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


'CEX 


100 
120 
140 


-1.5 
-1-.5 
-1.5 


- 


- 


- 


1.0 


- 


1.0 


- 


1.0 


mA 


T C =*150°C 


100 
120 
140 


-1.5 
-1.5 
-1.5 


- 


- 


- 


5.0 


- 


5.0 


- 


5.0 


'CEO 


50 
60 
70 


- 


- 







- 


1.0 


- 


1.0 


- 


1.0 


mA 


'CBO 'E = 
V CB = Rated V CB 


100 
120 
140 


- 


- 


- 


- 


1.0 


- 


1.0 


- 


1.0 


mA 


'ebo 


- 


7 


- 


- 


- 


1.0 


- 


1.0 


- 


1.0 


mA 


V CE0 (sus)b 


- 


- 


0.2 





100 


- 


120 


- 


140 


- 


V 


h FE a 


2 
2 


— 


5 
10 


— 


25 

5 


100 


20 
5 


80 


15 
5 


60 




V B E a 


2 


- 


5 


- 


- 


1.5 


- 


1.5 


- 


1.5 


V 


V CE (sat)a 


— 


— 


7.5 
10 


0.75 
2.0 


— 


1.0 
2.0 


— 


1.0 
2.0 


— 


1.6 
2.0 


V 


f T f = 0.5 MHz 


20 


- 


1 


- 


1 


- 


1 


- 


1 


- 


MHz 


h fe f = 1 kHz 


10 


- 


2.0 


- 


15 


- 


15 


- 


15 






V BE (sat) 






7.5 


0.75 


- 


2.0 


- 


2.0 


- 


2.0 


V 


C ob o f - 0- 1 MHz 
l E = 


10c 








- 


300 


- 


300 


- 


300 


pF 


'S/b 

t p = 1 s nonrep. 


50 
45 
40 








3.0 


- 


3.33 


- 


3.75 


- 


A 


R 0JC 


- 


- 


- 


- 


- 


1.17 


- 


1.17 


- 


1.17 


°C/W 



* In accordance with JEDEC registration data. 

'Pulsed; pulse duration < 300 ms. Duty factor < 2%. 

"* CAUTION: Sustaining voltage, Vq^q(sus) MUST NOT BE measured on a curve tracer. 



i 


*e 


/Ig-tO^ 






| 2£ 

< 
C 

u'Z. 

5 £ 
















IKilPB 


O 1 

k 

o 

i 






115 


1 IPf^nB 



Fig. 4 — Typical saturation voltage characteristics 
for all types. 





COLLECTOR-TO-EMITTER VOLTAOE <*ceW2 V|||||||||j 


1 

< 

1 

m 0.8 


111 11 1111 111 1111 llllKlll 

tlllllllll lllllllllllHltilllllllllllrrW^I^^^M 


z 

g 0.6 

K 
D 

u 0.4 

< 
a 


» 








0.2 0.6 I 1.4 1.8 2.2 2.6 

BASE.-TO-EMITTER VOLTASE (V BE )-V 

92CS-30I48 

Fig. S — Typical input characteristics for all types. 



'CB- 



12 


COLLECTOR -TO- EMITTER V0LTAGE(V CE ) 


■2V |||]|||||| 












1 IC 
























I- 8 

Z 






















3 s 






c 


'HitlHtillllPP^iHIll 111 Wt 






iil''P 11 




u 4 


iiff^ mmmBmB 






IIIIIIIIIIIIHIW-? illllllllllllllllllllllllllllrff 




° 2 


IWiir'-''J 1 











0.2 0.6 I 1.4 1.8 2.2 2.6 

BASE-TO- EMITTER VOLTAGE <V K t-V 92CS-KH49 

Fig. 6 — Typical transfer characteristics for all types. 



2-4 

I 2 

* 


IBlc 

ftjttffl 1 

IIKIIII 


OLLEC 
B|-*B 

:ase t 


TOR SUPPLY VOLTAGE ( Vfc c )' 30 V B 
-l/IOIc Si 
EMPERATURE (Tcl'25'C S 


















if 

9 
g <« 

Si 

5 








lull » 1 1 1 
iS lllilmfllllllllllllllli lllllll 

^M '.Mfflllll 111 11 











COLLECTOR CURRENT (lc>~A Mc s-30I5I 

Fig. 7 — Typical saturated-switching times 
for all types. 



155 



POWER TRANSISTORS 



2N5671, 2N5672 

Silicon N-P-N Power Transistors 



High-Current, High-Speed, High-Power Types for Switching and 
Amplifier Applications 



RCA Types 2N5671 and 2N5672* are epitaxial silicon 
n-p-n transistors having high current and high power 
handling capability and fast switching speed. The 
2N5672 is similar to the 2N5671 except that it has high- 
er voltage ratings and lower leakage currents. These 
devices are especially suitable for switching-control 
amplifiers, power gates, switching regulators, power- 
switchingcircuits, converters, inverters, control circuits. 
Other recommended applications included DC-RF amp- 
lifiers and power oscillators. 

They are supplied in the JEDEC TO-3 hermetic steel 
package. 



'Formerly Dev. Types TA7323 and TA7323A, respectively 



MAXIMUM RATINGS, Aoso/ure-Moximum Values: 

* COLLECTOR-TO-BASE 2N5671 2N5672 

VOLTAGE, V CB0 120 150 V 

COLLECTOR-TO-EMITTER SUSTAINING 
VOLTAGE: 

With base open, V CEO (sus) 90 120 V 

With external base-to-emitter resistance 
<R BE ) i 50fl, V CER (sus) 110 140 V 

With external .base-to-emitter resistance 
(R BE ) i 50 fl & V BE = -1.5, V CEX (sus) 120 150 V 

♦EMITTER-TO-BASE VOLT AGE. V EB0 ... 7 7 V 

♦COLLECTOR CURRENT, I c 30 30 A 

*BASE CURRENT, I B 10 10 A 

♦TRANSISTOR DISSIPATION, P T : 

At case temperatures up to 25° C 

and V CE up to 24 V 140 140 W 

At case temperatures up to 25° C 

and V CE above 24 V See Fig. 1 

At case temperatures above 25° C 

and V CE above 24 V See Figs.l&2. 

♦TEMPERATURE RANGE: 

Storage & Operating (Junction) —65 to +200 °C 

♦PIN TEMPERATURE (During Soldering) 

At distances * 1/32 in. from seating 

plane for 10 s max 230 C 

♦In accordance with JEDEC registration data format (JS-6, RFD-1) 



• Maximum Safe-Areo-of-Operation Curvet . . . 
's/b '' m ' T ''"* beginning at 24 V 

• Fait Turn-On Time . . . t on = 0.5us max. at l^= 15A 

• High-Current Capability . . . 

hp E , V CE (»at), V BE (sat), & V BE measured at l c = 15A 

• Low V CE (sat) = 0.75V max. 

• HighP T = 740Wmox. at T c = 25° C 

TERMINAL DESIGNATIONS 



100 

8 

6 

4 

30 

2 


CASE TEMPERATURE 


IV 


«25*C 




















(FOR T C ABOVE 25*. DERATE L 


INEARLY) 
















| 


























ICMAX. (CONT 


NUO 


JS) 












> 






















>/■» 


^ 


Vc 








°* 








k* 












"u 8 

12 6 

X 
Lu 

< 

or 
o 

UJ 

o 
o 












°\ \ 




























H\ 






t 






















^ 


\\ 






\ 






















tf \ \ 




























A 






s 










8 
6 

4 

2 

01 














































. 


V 




























V 






























E0 MAX. 
(2N567 


120 
21 


/ 












vc 


E0 MAX.* 
1 (2N567 


90 V 
11 — 

1 




"! 













JEDEC TO-3 



li 1 " 

3§ 


NOTE CURRENT DERATING AT CONSTANT VOLTAGE APPLIES tit t ft 
ONLY TO THE OlSSfPA TON-LIMITED PORTION AN0 Is/fc-LWITEO £4 f {-. +- 
PORTION OF MAXIMUM-OPERATING-AREA CURVES (FIG.I). lit M 
00 NOT DERATE THE SPECIFIED VALUE FOR l£ •»* Hitf " 






Trnr 


+Ht 


tr 


n 


4tl+f!+ : 






jjjjj-t 








JU; 




















JJllt 


>^%s 










TrS 








- 1 t j 




-rH-^p^y-tfc 
























ie 


2S a 



























































EFFECTIVE. CASE TOP. OR CASE TOT. (Tff f OR lc>-«C "**■>■ 

Fig. 2 - Dissipation derating curves for 
types 2N5671 and 2NS672. 




♦«o.i 

COLLECTOR AMPERES (IC) 



Fig. 3 - Typical dc beta characteristics 
for types 2N5671 and 2N5672. 



COLLECTOR- TO-EMITTER VOLTS (VCE>'! 


tt 






























s ' 5 

\ 

1 » 

J 5 

i 










! 


l 






s 
































H 











































4 










1 







X 


A l.< 



COLLECTOR-TO- EMITTER VOLTS (V CE ) 



92CS-I5650 



Fig. 1 - Maximum operating areas for types 2N5671 and 2NS672. 



BASE-TO-EMITTER VOLTS (VbE> 



Fig. 4 - Typical transfer characteristics 
for types 2N5671 and 2N5672. 



156 



POWER TRANSISTORS 



2N5671, 2N5672 



ELECTRICAL CHARACTERISTICS, Cose Twnperofur. (T c ) = 2S°C Un/ast Oth.rwij. Specified 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


DC 

Voltage 

(V) 


DC 

Current 

(A) 


Type 
2N5671 


Type 

2N5672 


V C B 


VCE 


VBE 


•c 


»B 


Min. 


Max. 


Min. 


Max. 


Collector-Cutoff Current 


'ceo 

'CEV 

'CEV 

(T c =150° C) 


- 


80 

110 
135 
100 


-1.5 

-1.5 
-1.5 


- 





- 


10 

12 

15 


- 


10 

10 
10 


mA 
mA 
mA 
mA 


Emitter-Cutoff Current 


'ebo 


- 


- 


-7 





- 


- 


10 


- 


10 


mA 


Co I lector-tor Emitter 
Sustaining Voltage: 
With base open 


VcEO< sus ) 


- 


- 


- 


0.2 





90° 


- 


120° 


- 


V 


With external base-to-emitter 
resistance (R BE )<50n 


vcer( sus ) 


- 


- 


- 


0.2 





110° 


- 


140° 


- 


V 


With base-emitter 
junction reverse biased 
&R BE *50O 


V CEX< SUS ) 


- 


- 


-1.5 


0.2 


- 


120° 


- 


150" 


- 


V 


Base-to-Emittet Saturation Voltage 


V BE (sat) 


- 


- 


- 


15 


1.2 


- 


1.5 


- 


1.5 


V 


Base-to-Emitter Voltage 


VBE 


- 


5 


- 


15 


- 


- 


1.6 


- 


1.6 


V 


Collector-to-Emitter 
Saturation Voltage 


V CE (sat) 


- 


- 


- 


15 


1.2 


- 


0.75 


- 


0.75 


V 


DC Forward-Current 
Transfer Ratio 


"FE 


- 


2 
5 


- 


15 
20 


- 


20 
20 


100 


20 
20 


100 




Second- Breakdown 
Collector Current 
With base forward biased 


'S/b b 


- 


24 
45 


_ 


_ 


- 


5.8* 
0.9= 


- 


5.8* 

o.y 


- 


A 
A 


Second- Breakdown Energy 
With base reverse biased 
R BE =20f>, L = 1B0mH 


EsV 


- 


- 


-4 


15 


- 


20 


- 


20 


- 


mj 


Gain-Bandwidth Product 


'T 


- 


10 


- 


2 


- 


50 


- 


50 


- 


MHz 


Output Capacitance (At 1 MHz,Ie=0) 


c ob 


10 












900 


- 


900 


PF 


Saturated Switching Turn-On Time 
(Delay Time + Rise Time) 


*on 


v C c= 

30 V 


- 


- 


15 


"B r 
'Br 

1.2 


- 


0.5 


- 


0.5 


fjS 


Saturated Switching 
Storage Time 


«$ 


v C c= 

30 V 


- 


- 


15 


■bi- 

IBp 

1.2 


- 


1.5 


- 


1.5 


A* 


Saturated Switching 
Fall Time 


«f 


V CC= 
30 V 


- 


- 


15 


'Br 
'Br 

1.2 


- 


0.5 


- 


0.5 


MS 


Thermal Resistance 
(Junction-to-Case) 


R 8JC 


- 


10 


- 


5 


- 


- 


1.25 


- 


1.25 


°C/W 



a Pulsed; pulse duration < 350 «s, duty factor=0.02 
CAUTION: The sustaining voltages V CE0 (sus) and V CEX lsus) MUST NOT 



*S/b <s defined as the current at v 

forward -biased for transistor operation m the active region 

Pulsed; 1-s, non-repetitive pulse. 

S/b is defined as the energy a< which second breakdown occur 
where L is a series load or leakage inductance and I is the peak c 
*ln accordance with JEDEC registration 



r specified reverse-bias conditions. E s/b =V2Ll' 



a format JS-6RDF-1. 



COLLECT 
S 600 

* 
1 

i 


IDR- 


TO-EMITTER MOLTS (V 


«"^ 
















Hi 




j~- 



































































Fig. 5 - Typical input characteristics for 
types 2NS671 and 2N5672. 




COLLECTOR-TO- EMITTER VOLTS (V CE ) 2CS-IM52 

Fig. 6 - Typical output characteristics 
for types 2N5671 and 2 N 5672. 



Z 140 

is l3 ° 

"1 
t|l20 

2 1 

iu|-"° 

dS ioo 

o 

90 


CASE TEMPERATURE (T c ) . 23 *C 
















1 
V CER (»u$) 


























^ 






































VCEO 


>U 


s) 












































% 








































































4 


>L 



Fig. 7 - Collector-to-emitter sustaining 
voltage characteristics for types 
2NS671 and 2NS672. 



COLLECTOR SUPPLY VOLTS (Vccl'30 
I C -l2 51 Bi .-IZ51 B2 


















I.2 

8 as 

i 06 

I 

1 04 
02 



















































































































































I !"** 




















































































S4 




^&~ 




















<4i'i 








"*■— t- J 




















I ' 






















I 



















COLLECTOR AMPERES del 9ZCS- 

Fig. 8- Typical saturated switching 
characteristics for types 
2NS671 and 2N 567 2. 



_157 



POWER TRANSISTORS 



2N5781-2N5786 

Silicon N-P-N and P-N-P Epitaxial-Base 
Complementary-Symmetry Transistors 

General-Purpose Types for Switching and Linear-Amplifier Applications 

RCA-2N5781, 2N5782, and 2N5783 are epitaxial-bate silicon These transistors are intended for medium-power switching and 



p-n-p transistors - ■ complements of the hometaxisl-bese silicon 
n-p-n types 2N5784, 2N6785, and 2N5786 * respectively. 

The three types in each family differ primarily in voltage ratings 
and saturation characteristics. 



complementary-symmetry audio amplifier applications. 



• Formerly RCA On. Types TA7270. TA7271, TA7272, TA7289. 
TA7280, and TA7291 respectively. 



MAXIMUM RATINGS. Absolute-Maximum Values: 

•COLLECTOR-TO-8ASE VOLTAGE V CB0 

COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: 
* with external base-to-emitter 

resistance (Rggl ■ 100ft VcER**"' 

with base open V CE0 («ui) 

•EMITTER-TO-BASE VOLTAGE V EB0 

•CONTINUOUS COLLECTOR CURRENT I c 

•CONTINUOUS BASE CURRENT Ig 

•TRANSISTOR DISSIPATION: P T 

At casa temperatures up to 25 C 

At ambient temperatures up to 2B°C 

At case temperatures above 25 C Derate linearly 

At ambient tempereturas above 26°C Derate linearly 

•TEMPERATURE RANGE: 

Storage and operating (Junction) 

•LEAD TEMPERATURE (During soldering): 

At distance > 1/32 In. (0.8 mm) from testing plane 

for 10 s max. 

•In accordance with JEDEC registration date format JS-6 RDF-2. 



P-N-P 2N5781" 



N-P-N 2N5784 



0.057 W/ C, or see Fig. 1 
0.0057 



♦ For p-n-p devices, voltage and currant values are negative. 



ELECTRICAL CHARACTERISTICS. At Casa Temperature (T c ) - 


«?5°C unless otherwise specified 






CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS* 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6781 
p-n-p 


2N5784 
n-p-n 


VCE 


V B E 


'C 


B 


Min. 


Max. 


Min. 


Max. 


Collector Cutoff Current: 
With external base-to-emitter 
resistance (Rqsj) - 100 ft 


'CER 


65 








- 


-10 


- 


10 


**A 


AtTc-IBO'C 


65 








- 


-1 


- 


1 


mA 


With base-emitter junction reverse- 
biased and external base-to-emitter 
resistance (Rbe) " 100 17 


'CEX 


-76 
76 


1.5 
-1.6 






- 


-10 


: 


10 


uA 


AtT c -150°C 


-75 
76 


1.5 
-1.5 






: 


-1 


- 


1 


mA 


With base open 


'CEO 


60 









- 


-100 


- 


100 


HA 


Emitter Cutoff Current 


■ebo 




-5 







- 


-10 


- 


10 


uA 


DC Forward-Current Transfer 
Ratio 


"FE 


2 
2 




1« 
3.2" 




20 

4 


100 


20 
4 


100 




Collector-to-Emitter Sustaining 
Voltage (see Figs, 2 and 3): 
With base open 


VcEO< sus) 






0.1» 





-6o b 


- 


65 b 


- 


V 


With external base-to-emitter 
resistance (Rue) " 100 ft 


V CER (sus) 






0.1« 




-80° 


- 


80 b 


- 


Base-to-Emitter Voltage 


V B E 


2 




1« 




- 


-1.5 


- 


1.5 


V 


Collector-to-Emitter Saturation 
Voltage (measured 0.25 in 
(6.3S mm) from case) 


v CE <»t> 






1» 


0.1 


- 


-0.5 


- 


0.5 


V 


Magnitude of Common-Emitter, 
Small-Signal, Short -Circuit, 
Forward-Current Transfer Ratio 1 ' 
f - 4 MHz 


Ihfel 


-2 




-0.1 




2 


15 








f - 200 kHz 


2 




0.1 






- 


5 


20 


Common-Emitter, Small-Signal, 
Short-Circuit, Forward-Current 
Transfer Ratio (f - 1 kHz) 


hfe 


2 




0.1 




26 


- 


25 


- 





Features: 

■ Low saturation voltages 

■ Maximum safe-area-of-operation curvet 

■ Hermetically sealed package 

■ High gain at high current 

■ High breakdown voltages 

TERMINAL DESIGNATIONS 




9«CS-275I2 

JEDEC TO-39 




EFFECTIVE CASS TEMPERATURE OR CASE TEMPERATURE (T EF f ] OR (T c ) - "C 

it»mm 

Fig. 1 - Dissipation derating curve for all types. 



wo 
I 

i • 

i ' 
; . 

% 

a 
l,t 


COLLECTOR-TO-EMITTER VOLTAGE (VcE»- -W 
CASE TEMPERATURE (T^ ■ 2S"C 



















































































































































































4 « • - «» 

COLLECTOR CURRENT (!£) - 



Fig. 2 - Typical gain-bandwidth product for 
2NS781, 2NS782, & 2N5783. 



i 

S 1.0 
E ■ 

i ' 

| 4 
I 

0.1 


COLLECTOR-TO-EMITTER VOLTAGE (V C r) . 2V 
CASE TEMPERATURE IT C ) • W 























































































































































































COLLECTOR CURRENT 0c> - 



Fig. 3 - Typical gain-bandwidth product for 
2N5784. 2N578S, & 2N5786. 



158 



POWER TRANSISTORS 



2N5781-2N5786 



ELECTRICAL CHARACTERISTICS. At Cm Ttmptnwn (Ttf - 2?C unlm other*** iptcifhd 






CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS* 


LIMITS 


UNITS 


VOLTAGE 
Vde 


CURRENT 
Adc 


2NB781 
P-n-f> 


2NS7S4 
n-p-n 


VCE 


VBE 


'c 


>B 


Mn. 


Max. 


Mki. 


Mm. 


Saturated Switching Time (Vgc " 
30V,I B1 -I B2 >: 
Turn-on (tj + t r ) 


*0N 






-1 
1 


-0.1 
0.1 


- 


0.6 


- 


5 


M» 


Turn-off 
(t, + t f ) 


*OFF 






-1 
1 


-0.1 
0.1 


- 


2.5 


- 


15 


Thermal Resistance: 
Junction-to-caie 


R 8JC 










- 


17.6 


- 


17.6 


"C/W 


Junction-to-ambient 


R 9JA 










- 


176 


- 


176 




Fig. 4 - Typical transfer characteristics for 
types 2N5781, 2NS782, 2N5783. 



ELECTRICAL CHARACTERISTICS, At Cut Ttmpertturt IT C ) • 


' 2b" C unlm othvwit* tptcifltd 






CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 4 


LIMITS 


UNITS 


VOLTAGE 
Vde 


CURRENT 
Ade 


2N6782 
p-n-p 


2N6788 
n-p-n 


VCE 


V B E 


•c 


'B 


Mm. 


Max. 


Mln. 


Max. 


Collector Cutoff Current: 
With external baie-to-emitter 
resistance (Rqe) " 100 11 


'CER 


60 








- 


-10 


- 


10 


uA 


AtT c -160°C 


60 








- 


-1 


-, 


1 


mA 


With base-emlttar junction reverse- 
biased and external base-to-emitter 
resistance (Rbe' " 100 12 


*CEX 


-60 
60 


1.6 
-1.6 






_ 


-10 


- 


10 


uA 


AtT c -160'C 


-60 
60 


1.6 
-1.6 






- 


-1 


- 


1 


mA 


With base open 


'CEO 


36 









- 


-100 


- 


100 


fA 


Emitter Cutoff Current 


<EBO * 




-6 







- 


-10 


- 


10 


jlA 


DC Forward-Current Transfer 
Ratio 


"FE 


2 
2 




1.2* 
3.2« 




20 

4 


100 


20 

4 


100 




Collector-to-Emitter Sustaining 
Voltage (see Figs. 2 and 3): 
With bate open 


v CEO ,,u *l 






0.1« 





_60b 


- 


60° 


- 


V 


With external base-to-emitter 
resistance (Rgcjl- 100 12 


V CER (sus) 






0.1» 




-66* 


- 


66° 


- 


Base-to-Emitter Voltage 


VBE 


2 




1.2» 




- 


-1.6 


- 


1.6 


V 


Collector-to-Emitter Saturation 
Voltage (meesured 0.25 in 
(6.36 mm) from case) 


V C E(»t) 






1.2» 
3.2» 


0.12 
0.8 


- 


-0.76 
-2 


- 


0.76 
2 


V 


Magnitude of Common-Emitter, 
Small-Signal, Short-Circuit, 
Forward-Current Transfer Ratio' 1 
f - 4 MHz 


M 


-2 




-0.1 




2 


16 








f-200kHi 


2 




0.1 




- 


- 


6 


20 


Common-Emitter, Small-Signal, 
Short-Circuit, Forward-Current 
Trensfer Ratio (f - 1 kHz) 


"fe 


2 




0.1 




25 


- 


26 


- 




Saturated Switching Time (Mqq - 
30 V, l B1 - l B2 ): 
Turn-on 
(t d + t r | 


<ON 






-1 
1 


-0.1 
0.1 


- 


0.6 


- 


6 


V* 


Turn-off 
(«s + «f) 


*0FF 






-1 
1 


-0.1 
0.1 


_ 


2.6 


_ 


16 


Thermal Resistance: 
Junction-to-case 


RjJC 












17.6 


- 


17.6 


"C/W 


Junction-to-ambient 


"«JA 










- 


176 


- 


176 



* In accordance with JEDEC registration data format JS-6 RDF-2. 

* Pulsed, pulse duration « 300 /is, duty factor - 1 .8%. 

» CAUTION: Sustaining votfg- V ceo (tu$L and V C£ft ($u$) 
MUST NOTbt m—tund on t curve tnemr. 



* For p-n-p devices, voltage and current values are 

negative. 
e Lead resistance is critical in this test. 
d Meesured at a frequency where |hf ( | is decreasing 

et approximately 6 dB per octave. 




S.4 U II 1.1 1.1 M U 

MSt-TOfm-mai vSLTMa (Vm) -i 

nm 

Fig. 5- Typical transfer characteristics for 
types 2NS784, 2NS78S, 2NS786. 



m m$ 




IJTTTTTl 1 1 IT CMS TaartXATIMI (Tr) • B*C 


""rmf llllfmilllllllllllllllllllllllllllllllllll IIMIIIIIIIIIII TnT 

• "IBlllBllllllilll l|||lllllllll|ipiiPii 


* m 

ffffm 




fBWi^MllMlllllllllllll 

HI lliiiiinl 


m Wm 


'MitmlHi^'-- 





-0.1 -1.0 -I.S -2.0 -2.1 

oxxacro* cuwwmt «c> - a 



Fig. 6 ■ Typical saturated switching characteristics 
for types 2N578I, 2N5782, 2N5783. 




Fig. 7 - Typical saturated switching characteristics 
for types 2NS784, 2N578S, & 2N5786. 



159 



POWER TRANSISTORS 



2N5781-2N5786 



ELECTRICAL CHARACTERISTICS, At Case Temperature ,{Tq\ - 25° C unless otherwise specified 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS* 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N5783 
p-n-p 


2N5786 
n-p-n 


VCE 


V B E 


'c 


<B 


Min. 


Max. 


Min. 


Max. 


Collector Cutoff Current: 
With external base-to-emitter 
resistance (Rgg) • 100 n 


'CER 


40 








- 


-10 


- 


10 


MA 


AtT c =150°C 


40. 








- 


-1 


- 


. 1 


mA 


With base-emitter junction reverse- 
biased and external base-to-emitter 
resistance (RgE) = 10 ° ^ 


'CEX 


-45 
45 


1.5 
-1.5 






- 


-10 


- 


10 


M 


AtT c = 150°C 


-45 
45 


1.5 
-1.5 






- 


-1 


- 


1 


mA 


With base open 


'ceo 


25 









- 


-100 


- 


100 


MA 


Emitter Cutoff Current 


'ebo 




-3.5 







- 


-10 


- 


10 


"A 


DC Forward-Current Transfer 
Ratio 


"FE 


2 
2 




1.6" 
3.2" 




20 
4 


100 


20 
4 


100 




Collector-to-Emitter Sustaining 
Voltage (see Figs. 2 and 3): 
With base open 


V CE0 (sus) 






0.1 a 





-40 b 


- 


40 b 


- 


V 


With external base-to-emitter 
resistance (Rue' = 100 ^ 


V CER (sus) 






0.1 a 




-45b 


- 


45" 


- 


Base-to-Emitter Voltage 


VBE 


2 




1.6 a 




- 


-1.5 


- 


1.5 


V 


Collector-to-Emitter 

Saturation Voltage (measured 
0.25 in (6.35 mm) from case) c 


V CE (sat) 






1.6 a 
3.2* 


0.16 
0.8 


- 


-1 
-2 


- 


1 
2 


V 


Magnitude of Common-Emitter, 
Small-Signal, Short-Circuit, 
Forward-Current Transfer Ratio" 
f = 4 MHz 


l h fe| 


-2 




-0.1 




2 


15 








f = 200 kHz 


2 




0.1 




- 


- 


5 


20 


Common-Emitter, Small-Signal, 
Short-Circuit, Forward-Current 
Transfer Ratio (f » 1 kHz) 


n fe 


2 




0.1 




25 


- 


25 


- 




Saturated Switching Time (Vcq - 
30 V, l B1 = l B2 ): 
Turn-on 
(t d + t r ) 


*ON 






-1 
1 


-0.1 
0.1 


- 


0.5 


- 


5 


MS 


Turn-off 
(t s + t f ) 


l OFF 






-1 
1 


-0.1 
0.1 


- 


2.5 


- 


15 


Thermal Resistance ■ 
Junction-to-case 


RflJC 






- 






17.5 


- 


17.5 


°c/w 


Junction-to-ambient 


R 9JA 










" 


175 


- 


175 



* In accordance with JEDEC registration data format JS-6 RDF-2. 
a Pulsed, pulse duration = 300 us, duty factor * 1 .8%. 
b CAUTION: Sustaining voltages Vq^qIsus), and V CER (sus) 
MUST NOT be measured on a curve tracer. 



t For p-n-p devices, voltage and current values are negative. 
c Lead resistance is critical in this test. 
d Measured at a frequency where |hj e | is decreasing at 
approximately 6 dB per octave. 



I ' 
£ 100 

* ! 

i 

I ». 
5 ! 
E . 

£ ' 


COLLECTOR- T0-EMTTER VOLTAGE (V ct ) ■ - 2V 
















O'C 


- 


























• IS 
























1 risT 






""""-"^^i 


















- ■ 








|3 






\ 
























CASE 


EttPERATUREfTc 


■ -» 










sx 






















X s 














- 








— 



























































































































COLLECTOR CURRENT (l c l - A 



Fig. 8 - Typical dc-beta characteristics for 
type 2NS781. 



tooo ( 

ft » 
1 , 














































>**C 


*2S B C 


I 






















. 




































~ 




- 






it "■" 
















— h- 


-6S°C 








-I 




- 






SE TEMPER 


TU 


RE 


IT C ). 






















- — 

















































\ 

























































COLLECTOR CURRENT 0c> - 



Fig. 9 - Typical dc-beta characteristics for 
type 2N5784. 



% 100 

Si • 
i 4 

1 ' 
3 10 

A ■ 
1 ' 










































































1 
• IS0«C 




























— rs^ 






^^ 


^ 


















CASE 


h— 


E 


TC 




>~t 


!v 
















E«PER 




•C -s 


^ 


k 






























V 


^ 


V 






























^ 


^s 








































































































' 



















































COLLECTOR CURRENT Hc> - A 



Fig. 10 - Typical dc-beta characteristics for 
type 2N5782. 





10M 
































1 ' 

* • 
5 , 
















| 




























• ism: 




























-t3? 






-=fti 
















































^CASE 




JRI 


(T 


c>-- 


























"1 














































! 


» ( 
























\\ 
































































































































, 

































COLLECTOR CURRENT He) - A 



Fig. 1 1 - Typical dc-beta characteristics 
for type 2N5783. 



IMfl t 

S 1 

£100 

* ! 

5 

§ > 

i. ' 
















































i 
























-- 


1 «1S0«C 
































^ 


















■fc^ 


SETU 


EM 


TU 


IE 


(T C I- 


-ts»? 




































\ 


v^^ 






























\ 


^^. 

vv 











- -^ 










- — 1 


— 






— " 















































































































•0 





















10 



COLLECTOR CURRENT (l c l - A 

Fig. 12 - Typical dc-beta characteristics 
for type 2N5786. 



Woo, 
2 1 

CK 100 

S ! 

5 , 

? 10 

I : 
§ * 


COLLECTOR-TO-EWTTER VOLTAOE (VcE> ■ 2" 














1 


























• M0«C 
























"" 


■ .1^ 


-■ 


:•„ 




















■-T« 


I TEMPERA 


ruRE 


(T C 1- 


^ 


s 
































*■ 






























"s 


\S 




























































































. 





























COLLECTOR CURRENT (Itf - 



Fig. 13 - Typical dc-beta characteristics for 
type 2N5785. 



160 



POWER TRANSISTORS 



2N5781-2N5786 



CASE TEMPERATURE (T C )«25"C 
(CURVES MUST BE DERATED LINEARLY 
WITH INCREASE IN TEMPERATURE) 




-2 -4 -6 -8 -10 -2 -4 -6 -8 

COLLECTOR-TO-EMITTER VOLTAGE (V CE f-V 

92CS-2S943 

Fig. 14 - Maximum operating areas for types 2N5781, 2N5782, and 2N5783. 



CASE TEMPERATURE (T c ) ■ 25°C 
(CURVES MUST BE DERATED LINEARLY 
WITH INCREASE IN TEMPERATURE) 




4 6 8 IO 2 

COLLECTOR-TO- EMITTER V0LTA6E (V CE ) -V 

92CS- 23944 

Fig. 15 - Maximum operating areas for types 2N5784, 2N5785, and 2NS786. 



161 



POWER TRANSISTORS 



2N5838-2N5840 

High-Voltage, High-Power Silicon N-P-N 
Power Transistor 

For Switching and Linear Applications in Military, Industrial and Commercial Equipment 



RCA 2N5838, 2N5839and 2N5840** are epitaxial silicon 
n-p-n power transistors utilizing a multiple-emitter-site 
structure. These devices employ the popular JEDEC 
TO-3 package; they differ mainly in voltage, current- 
gain, and Vc£(sat) ratings. 

Featuring high breakdown voltage ratings and low-satu- 
ration voltage values, the 2N5838, 2N5839 and 2N5840 

MAXIMUM RATINGS, Abie/uw-MoxImum Vofuas; 

2N5838 2N5839 2N5840 
*COLLEC TOR-TO-BASE 

VOLTAGE, V CBO 275 300 375 V 

COLLECTOR-TO-EMITTER SUS- 
TAINING VOLTAGE: 



With reverse bias (VjjE) of 

-1.5 V. VcEV(»us)A 

With external base-to-emitter 
resistance (Rgg) < 50 ft, 

VcER(»>») 

*EMITTER-TO-BASE 

VOLTAGE, V EBO 

*COLLECTOR CURRENT, Ic 

Continuous 

Peak 



250 
275 



275 
300 



350 
375 



CONTINUOUS BASE CURRENT, 
IB 



are especially suitable for use in inverters, deflection 
circuits, switching regulators, high-voltage bridge ampli- 
fiers, ignition circuits, and other high-voltage switching 
applications. 



** Formerly RCA D»v. types TA7513, TA7530, and TA7420 
respectively. 



"TRANSISTOR DISSIPATION, 
Pt: 
At case temperature up to 25° 



See Fig. 5 
See Figs. 1 & 5 



At case temperatureaupto25 ' 

and Vce above 40 V 

At case temperatures above 25° 

and Vce «bove 40 V 

'TEMPERATURE RANGE: 

Storage fts Operating (Junction) 
*PIN TEMPERATURE (During 
Soldering): 
At distances 2 1 /32 in. 
(0.8 mm) from case for 10 s 



In accordance wUh JBDECroalstrationdata format (J8-6, RDF-1). 
' Shown as V CEX (aua) in JEDEC Rogiatration Data. 



Features : 

• Maximum sofe-area-of-operation curves 

• Lew saturation voltages 

• High voltage ratings 

V CER (s*s)= 375V(2N5840) 
300 V (2N5839) 
275V(2H5838) 

• High dissipation rating 

P T » 100 W 

TERMINAL DESIGNATIONS 
E- 




ELECTRICAL CHARACTERISTICS, Cose T»mp*ratun (T c ) = 25°C 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
A de 


2NS838 


2N5839 


2NS840 


VCE 


V B E 


'C 


>B 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


Collector-Cutoff Cuitent: 
With base open 


'ceo 


200 
250 










2 










mA 


With base-emitter junction 
reverse biased 


'CEV 


265 
290 
360 


■1.5 
-1.5 
■1.5 








5 










mA 


With base-emilter junction 
reverse biased, Tp=100°C 


'CEV 
T c 100 °C 


265 
290 
360 


1.5 
1.5 
1.5 








8 










mA 


Emitter Cutoff Current 


'ebo 




-6 








1 




1 






mA 


Collectorto-Emittei 
Sustaining Voltage: 

With base open 


V CEO lsusf 






0.2 a 




251^ 




275 b 




350 k 




V 


With base-emitter junction 
reverse biased 


V CEX ,susP 




■1 5 


O.l" 




275 b 




300 k 




375 k 




With external base-lo-emittei 

resistance <R BE l - 50. i 


V CERl susf 






0.2* 




275 b 




300" 




375 b 




Emitter-to-Base Voltage 
lE = 0.02A 


V EB0 










6 




6 




6 




V 


DC Forward-Current 
Transfer Ratio 


*FE 


5 
3 
2 




0.5 a 
2 a 
3" 




20 

8 


40 


20 
10 


50 


20 
10 


50 




Baseto-Emittei 
Saturation Voltage 


V BE isal) 






2" 
3" 


0.2 
0.375 




2 




2 




2 


V 


Collector-to-Emitter 
Saturation Voltage 


V CE isati 






2« 
3» 


02 
0375 




1 




15 




IS 


V 


Output Capacitance: 
Vcb = 10 V, f =1 MHz 


^obo 












150 




150 




150 


PF 


Magnitude of Common 
Emitter. Small-Signal. Short 
Circuit. Forward-Current 
Transfer Ratio (f - 1 MHzi 


w 


10 




02 




5 




5 




5 






Forward-Bias, 
Second-Breakdown 
Collector Current: 
t = 1 s, nonrepet'tivn 


'S/o 


40 








2.5 




25 




25 




A 


Second Breakdown' Energy 
(With base reverse biased) 
R B = 50 n, L • 100 mH 


Es/. 




•4 






0.45 




0.45 




045 




ml 


Thermal Resistance : 
(Jurtction-to-Case) 


R flJC 


10 




5 






1.75 




1.75 




1.75 


°C/W 



* In accordance with JEDEC registration data format (JS-6 
a Pulsed; pulse duration = 350 us, Duty factor £ 2%. 

162 



b CAUTION: The sustaining voltages Vceo<»"»). VC€x( su$ ) and 
VCER( S >»). MUST NOT be measured on a curve tracer. 



NOTE: CURRENT DERATING AT CONSTANT 
VOLTAGE APPLIES ONLY TO THE DISSIPATION- 



•1 




100 125 ISO 179 200 
CASE TEMPERATURE IT C I 'C 

92SS-4072RI 

Fig. 1 ■ Derating curves for all types. 



5 5 

,_ J 

X 

«- 

5jf:2.8 

ao 
■2: 

1" 

ga: 

Oh. 1.3 
on 

™" i 

< 

| 05 
£> 


COLLECTOR-TO-EMITTER VOLTAGE (V ce ). 5 V 






































• 


" 






">• 


\ 


ft, 


























v& 














E 
( 


E 

r e 


a 

■ 


>ERA 


ORE 






I 
















v\ 


























\ 


\. 

































COLLECTOR CURRENT ll c > — A 1XSS- 

Fig. 2 - Typical normalized dc beta 
characteristics for all types. 



POWER TRANSISTORS 



SWITCHING-TIME CHARACTERISTICS, At Case Temperature (Tc) - 2S°C 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
V dc 


CURRENT 
A dc 


2NSS38 


2N5839 


2N5S40 


v C c 


'C 


<B # 


Max. 


Typ. 


Max. 


Typ. 


Max. 


Typ. 


Switching Times: 
Delay 


«d 


200 


2 
3 


0.2 
0.375 




0.06 




0.07 




0.07 


MS 


Rise 


«t 


200 


2 
1 


07 
0.375 


1.5 


0.8 


1.5 


0.6 


1.75 


0.6 


Storage 


>s 


200 


2 
i 


0.2 
0.375 


3.0 


1.0 


3.75 


1.75 


3.0 


175 


Fait 


>f 


200 


2 
3 


0.2 
0.375 


1.5 


0.4 


1.5 


0.35 


1.5 


0.35 



2N5838-2N5840 




' In accordance with JEOEC legisbation data format (JS-6 RDF-1). • l 0| = i B2 = value shown. 



Fig. 3 - Typical saturation voltage 
characteristics for all types. 




4 6 8 | 2 4 6 8 |00 

COLLECTOR-TO -EMITTER VOLTAGE «V CE 1 — V 

Fig. 5 - Maximum operating areas for all types. 



6 8 K)00 

92CS-I5905 




Fig. 4 - Typical transfer characteristics 
for all types. 




O 10 20 30 40 SO 

COLLECTOR-TO-EMITTER VOLTAGE (V CE 1— V nn _ 4 

Fig. 6 - Typical output characteristics 
for all types. 



||«o 


CASE TEMPERATURE [T c »■ 25 # C 






































































V CE 


„(•.•> 


























»« MO 
X* 300 

jw" 2«0 




1 






4*2540 








v 


III 


f , 


































1 ' ' 




























V CER (,u,) 






















v CER Ul "' 






49 










VcE0'»«l 












*. 










V CEO ltu«l _ 























































































EXTERNAL BASE-TO-EMITTER RESISTANCE! 



Fig. 7 ■ Collector-to-emitter sustaining 
voltage characteristics for all 
types. 



163 



POWER TRANSISTORS 



2N5838-2N5840 



CASE TEMPERATURE (T c )«IOO°C 




10 ' """100 

COLLECTOR-TO-EMITTER VOLTAGE (V^j) — V 

Fig. 8 - Maximum operating areas for all types. 



1000 



»2CS-I5»06 



0.12 
Oil 

- 0.1 
i 




















REPETITION RATE • 100 Mt 
COLLECTOR SUPPLY VOLTS IV CC > » 100 
CASE TEMPERATURE IT C I • 29*C 
OC BETA lh„l • 6 I2N58J8I 

' -10 I2NSB39 S 2N5840I 
[ B| *"'Bj 






















z 

p 08 

Cjo.or 

0.06 
0.05 





































































































































































































































































































































































































1 














A 






4 





COLLECTOR CURRENT (!<;) 



Fig. 9 - Typical delay-time characteristic 
for all types. 



f 

F 
C 
C 

c 
I [ 

1 




















EPETITION RATE ■ 100 Hi 
OLLECTOR SUPPLY VOLTS tV cc > • 200 
ASE TEMPERATURE IT C I • 25'C 
C BETA Ih.-I • 6 I2N583BI 

- 10 (2N5639 a 2N3640I 
8,--'B 2 








it rtf" 


































- 




















s 




























































S 0.5- 






















































































































































4 



COLLECTOR CURRENT IX C 1 — A 



Fig. 10- Typical rise-time characteristic 
for all types. 



«. 5 

i 


I ""' " OURATION S 20(>I 
I 1 1 II 1 | I I 1 I 1 1 I IREPETITION RATE • 100 Hi 

1 COLLECTOR SUPPLY VOLTS (V cc l ■ 
1 1 1 1 1 1 1 1 1 1 1 1 1 1 CASE TEMPERATURE (Tfl • 2»'C 


20C 


lllll PC "ETA (»„) • S I2NSS38I 
1 1 1 1 1 1 1 1 1 1 1 1 I 1 1. ■»«■»»» B2N5640I 

111111111111m' 1 '"' 88 


I 

i z 






















































































in 






































< 


1 


2 






3 






4 





COLLECTOR CURRENT II/.I— A 



Fig. 1 1 ■ Typical storage-time characteristic 
for all types. 



«. 0.5 
I 

£■ 0.4 

I 

y. 0.3 

2 02 

01 


PULSE DURATION £ 
REPETITION RATE 
COLLECTOR SUPPL 


20pl 
10% Hi 






















OC BETA (H--I ■ S I2N5B3SI 

•10 I2N5B39 B 2NSS401 

■l B 2 








































































































n 








: +Ft : 




























COLLECTOR. CURRENT II C I— A 



Fig. 12 - Typical fall-time characteristic 
for all types. 



164 



POWER TRANSISTORS 



2N5869, 2N5870 



Silicon N-P-N Epitaxial-Base High-Power Transistors 



Rugged Devices, Broadly Applicable 
For Industrial and Commercial Use 

The RCA-2N5869 and 2N5870 are epitaxial- 
base silicon n-p-n transistors featuring high 
gain at high current. These devices have a 
dissipation capability of 87.5 watts at case 
temperatures up to 25 C. 



They differ in voltage ratings and in the 
currents at which the parameters are con- 
trolled. 

Both of these devices are supplied in the 
steel JEDEC TO-204MA hermetic package. 



MAXIMUM RATINGS, Absolute-Maximum Values: 

2N5869 

* v CEO 6° 

* V CB0 60 

* v EBO 5 

* l c 5 

* 'CM 10 

* 'B 2 

* P T 

AtT c <25 C 87.5 

AtT c >25°C derate linearly 

* T stg . Tj 6! 

* T L 

At distance 1/16 in. (1.58 mm) from case for 10s 

* In accordance with JEDEC registration data. 



2N5870 




80 


V 


80 


V 


5 


V 


5 


A 


10 


A 


2 


A 


87.5 


W 






200 °C 



250 



Features: 

■ High dissipation capability 

■ Low saturation voltages. 

■ Maximum safe-areas-of -operation curves 

■ Hermetically sealed JEDEC 
TO-204MA package 

■ High gain at high current 

■ Thermal-cycling rating curve 

Applications: 

■ Series and shunt regulators 

■ High-fidelity amplifiers 

■ Power-switching circuits 

■ Solenoid drivers 



TERMINAL DESIGNATIONS 




JEOEC TO-204MA 



16 8 

6 

< 4 

J_ 

H 

— 2 










"V*V 


0.1 „, S 




































^V,. / 


^Jv 
























^ 


\ 






CUR 
RAT 


its 1 
zo v 


IPPLV 8EL0V 
EO 


ys 


v\ 


\ 




u 8 

a 6 
o 

° 2 
O.I 


























































2N5869- 
2NS670 


A * 


k \ 




\ 


\ 


A 


UBIE* 


T TE 


MPERATURE 


(T C |.25-C 


\ 


\ 








I 


» , 


, 


t < 




> 


• 



COLLECTOR EMITTER VOLTASE (V CE )-V t , cs . so|90 

Fig. 1 — Maximum operating areas. 



100 

» „ 

I 

g A 

< 

Si 2 

* 

O 

10 


































V \ 














\ ^ 


k.<* 










i 

< 




x*. 










X 


% 






1 \ 

\\ 




\ 


ff 


j\ — - 
x*°. 


1 \ 










iV 


V 


V 





NUMBER OF THERMAL CYCLES UN THOUSANDS) 



92CS-I9970RI 



Fig. 2 — Thermal-cycling rating chart. 



S«oo 
s 

3 200 

I 

5 ioo 

£ 80 

i- so 
3 

| «0 

§ 20 

o 10 

3 8 

« 


COLLECTOR-TO-EMITTER VOLTAGE IVCE*' *V 








l 1 III l 
CASE TEMPERATURE IT r l-l2S*C 


























.2S/C 




























































_ -*o # c 

















































































































































COLLECTOR CURRENT (1^1 — A 

92CS- 19661 

Fig. 3 — Typical dc beta characteristics 
for both types. 



8 
i ? 


COLLECTOR-TO-EMITTER VOLTASC (V CE ) • 4 V 
CASE TEMPERATURE IT C ) • 25'C 
































T- 




























i * 




























X 




























I * 




























3 ' 























































• 8 

0.01 o.i i n 

COLLECTOR CUMIENT(I C )— A 

MCS- MOM 

Fig. 4 — Typical gain-bandwidth characteristics for 
both types. 



1 


2N9 


161 


2NS87C 


) 








"c 


■ 25-C 
/l B .|0 


8 
8 

2 


J 






















''AT 




















fr J ° V 












C- 


s 






«r 


"CCMO 


/ — 




























































e 

2 


















l° AT J$ 


e 'off). 


> — 
















































r, 


, ■ 






I 


s 




i « 


5 



COLLECTOR CURRENT ( I c )-A 92CS-30I89 

Fig. 5 — Turn-on-time characteristics. 



% 

2 
1 ■ 

i « 

u 4 

I 








































l c /l B .|0 

l ei' l B2 






















' 


















■*>J 
































'f 


K*'*>v 


















< O'VCC-IOV" 


















































8 
i 
























2N5869.2N5870 














1 1 1 


















1 


> n 


1 


< 


1 


. 


1 




! 4 


s 



COLLECTOR CURRENT <!<;>— A 



92C9- 30188 



Fig. 6 — Turn-off-time characteristics. 



165 



POWER TRANSISTORS 



2N5869, 2N5870 



ELECTRICAL CHARACTERISTICS, at Case Temperature 
Tg ■ 25°C Unless Otherwise Specified 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNIT 


VOLTAGE 
Vdc 


CURRENT 
A dc 


2N5869 


2N5870 


V C E 


v B e 


'c 


>B 


MIN. 


MAX. 


MIN. 


MAX. 


'CEX 


60 
80 


1.5 
1.5 





_ 


_ 


0.1 


- 


0.1 


itiA 


T c = 1 50°C 


60 
80 


1.5 
1.5 


- 


: 


- 


2 


- 


2 


'ceo 


30 
40 


- 


- 






- 


0.5 


- 


0.5 


mA 


'CBO 
l E = 


60 # 
80* 


- 


- 


- 


- 


0.1 


- 


0.1 


mA 


'ebo 


- 


-5 





- 


- 


1 


- 


1 


mA 


V CE0 (sus)b 


- 


- 


0.1 





60 


- 


80 


- 


V 


h FE a 


4 
4 
4 


- 


0.3 

1.5 

5 


- 


35 

20 

4 


100 


35 

20 

4 


100 




V B E a 


4 


- 


1.5 


- 


- 


1.5 


- 


1.5 


V 


V BE (sat)a 


- 


- 


5 


1.25 


- 


2.5 


- 


2.5 


V 


V CE (sat)a 


- 


- 


2 

5 


0.2 
1.25 


_ 


1 
2 


: 


1 
2 


V 


f = 1 MHz 


10 


- 


0.25 


- 


4 


- 


4 


- 


MHz 


h fe 

f = 1.0 kHz 


4 


- 


0.25 


- 


20 


- 


20 


- 




C ob V CB= 10 V 
f = 1 kHz 


- 


- 


- 


- 


- 


150 


- 


150 


pF 


V 


- 


- 


1.5 


0.1 5C 


- 


0.7 


- 


0.7 


MS 


t s V CC = 30V 


- 


- 


1.5 


0.1 5C 


- 


1 


- 


1 


Ais 


»f 


- 


- 


1.5 


0.1 5C 


- 


0.8 


- 


0.8 


MS 


R 0jc 


- 


- 


- 


- 


- 


2 


- 


2 


°C/W 



* In accordance with JEDEC registration data. 

* V CB 

a Pulsed; pulse width <300 tis, duty factor < 2%. 

*> CAUTION: Sustaining voltage, Vqcq(sus), MUST NOT be measured on a curve tracer. 




BASE-TO-EMITTER VOLTAGE (V BE )-V 

92C5- 29005 

Fig. 7 — Typical input characteristics for 
both types. 



166 



POWER TRANSISTORS 



2N5871,2N5872, 2N5873, 2N5874 

Silicon N-P-N and P-N-P Epitaxial-Base High-Power Transistors 



Rugged Devices, Broadly Applicable 
For Industrial and Commercial Use 

The RCA-2N5871 and 2N5872 are epitaxial- 
base silicon p-n-p transistors featuring high 
gain at high current. The RCA-2N5873 and 
2N5874 are epitaxial-base silicon n-p-n tran- 
sistors. They may be used as complements to 
2N5871 and 2N5872, respectively. These 



devices have a dissipation capability of 115 
watts at case temperature up to 25 C. 

They differ in voltage ratings and in the 
currents at which the parameters are con- 
trolled. All are supplied in the steel JEDEC 
TO-204MA hermetic package. 



MAXIMUM RATINGS, Absolute-Maximum Values: 



At T c <25 C 115 

At Tq > 25 C derate linearly 



At distance 1/16 in. (1.58 mm) from case for 10 s 
T J- T stg 



2N5871» 


2N5872* 




2N5873 


2NS874 




60 


80 


V 


60 


80 


V 


5 


5 


V 


7 


7 


A 


15 


15 


A 


2 


2 


A 


115 


115 


W 
W/°C 

°C 








65 


to 200 


°c 



Features: 

■ High dissipation capability 

■ Low saturation voltages 

■ Maximum safe-areas-of -operation curves 

■ Hermetically sealed JEDEC TO-3/ 
TO-204MA package 

■ High gain at high current 

■ Thermal-cycling rating curve 

Applications: 

■ Series and shunt regulators 

■ High-fidelity amplifiers 

■ Power-switching circuits 

■ Solenoid drivers 

TERMINAL DESIGNATIONS 




JEDEC TO-204MA 



* In accordance with JEDEC registration data. 

* For p-n-p devices, voltage and current values are negative. 



i 


~ 


c-is'e 

























X 


■*» 


< 

1 6 

« 9 

o: 












s^ 
















/!S?* 


















T, ■ 2O0»C 


V^^ 
































\ 






u * 

j e 

o 

° 4 


CURVES APPLY BELOW R 


MED V CC o 


\\ 
















\\ 
















A 
















^\ 








\ 










, 


, 


4 




I 


' .1 



COLLECTOR EMITTER VOLTA0E <V eI >— V 

Mct-Mtn 

Fig. 1 - Maximum operating areas for all types. 



i 

I • 
I ♦ 

< 

tv 

S 

S z 

» 

o 
a. 

10 


























































































\ c * 




















X? 


<\ 














l[ 






' X 


fc< 












3 


\\ 






\ 


fa 












1 \ 








*A 


fa 










n 






A; 









MUMUR 0P THERMAL CYCLES (IN THOUSANDS) 



92CS-I9970M 



Fig, 2 — ' Thermal-cycling rating chart. 



- 1. 

u. 

I 2 

s 


— ' 


















V CE ' 

1 
r J"/5 . 
















25«C 




















S 

i s 

£ * 

I • 

O 

? l0 




-55'C 
























































































^ 


8 • 
2 • 
























































7 


8 




2 ' 




S 


9 




2 


ft 



COLLECTOR CURRENT ( I c )— A 92CS- 30211 

Fig. 3 — Typical dc beta characteristics for 
2N5871 and 2N5872. 



— J- 
















I 2 . 




r 1 

— -iV»°*c 














?. inn 




2! 


•c 














U. 




















» 8- 




















>- 




















Z 
I 




-! 


IS'C 






















o 

ac 

i id 




















K "* 








































S i 






















8 




! 




1 






1 


I it 



COLLECTOR CURRENT I I e )— A Mcs . Mtlt 

Fig. 4 — Typical dc beta characteristics for 
2N5873 and 2N5874. 



1 


Tj • 25'C 






























































5 19 






















t U 






















o 






.itflc^'JV 












s 




• "be ( * 


ii^'V' 










> 


































V 8C (»ot>A TI C 


/l B .|0" 

r— -r— 












T 


V 


COL 


I 

LECTOR 


• 

CUR 


• 
UN 


I 

T 


IC>-» 


2 

MC8- 


1 • 

KMII 


7 



2 

i.e 

i' 2 


Tj - 2VC 








































































































r/U 


.« 










o 
> 

> 






V8E 


h" .J*.** 








" vee*' ■]*• I 





















10 












V{ 


E <«at)ATI C />B 












1 T 1 










! 


» ( 




s 




> ' 


«7 



pjg m g _ Typical voltage characteristics for 
2N5871 and 2NS872. 



COLLECTOR CURRENT (Ic ) — A 92CS-502H 

Fig. 6 — Typical voltage characteristics for 
2N5873 and 2N5874. 



167 



POWER TRANSISTORS 



2N5871, 2N5872, 2N5873, 2N5874 

ELECTRICAL CHARACTERISTICS, at Case Temperature 
T c = 25°C Unless Otherwise, Specified 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNIT 


VOLTAGE 
Vdc 


CURRENT 
A dc 


2N5871 # 
2N5873 


2N5872* 
2N5874 


V C E 


V B E 


'c 


<B 


MIN 


MAX. 


MIN. 


MAX. 


" 'CEX 


60 
80 


1.5 
1.5 


- 


_ 


- 


0.25 


- 


0.25 


mA 


T c = 150°C 


60 
80 


1.5 
1.5 


- 


- 


- 


2 


- 


2 


' 'CEO 


30 
40 


- 


- 






- 


0.5 


- 


0.5 


mA 


'CBO 
l E = 


60C 
80c 


- 


_ 


- 


: 


0.25 


- 


0.25 


mA 


"EBO 


- 


-5 





- 


- 


1 


- 


1 


mA 


v CEO< sus > b 


- 




0.1 





60 


- 


80 


- 


V 


h FE a 


4 
4 
4 


- 


0.5 
2.5 
7.0 


- 


35 

20 

4 


100 


35 
20 

4 


100 




V B E a 


4 


- 


2.5 


- 


- 


1.5 


- 


1.5 


V 


V BE (sat)a 


- 


- 


7 


1.75 


- 


2.5 


- 


2.5 


V 


V CE (sat)a 


_ 


: 


4 
7 


0.4 
1.75 


- 


1 
2 


- 


1 
2 


V 


*T 

f = 1 MHz 


10 


- 


0.25 


- 


4 


- 


4 


- 


MHz 


h fe 

f = 1.0 kHz 


4 


- 


0.5 


- 


20 


- 


20 


- 




C ob 2N5871-72 
f = 1 MHz 2N5873-74 


10C 


- 


- 


- 


- 


300 
250 


- 


300 
250 


pF 


*r 


- 


- 


2.5 


0.25d 


- 


0.7 


- 


0.7 


Ids 


t s V CC = 30 V 


- 


- 


2.5 


0.25d 


- 


1 


- 


1 


MS 


tf 


- 


- 


2.5 


0.25d 


- 


0.8 


- 


0.8 


Us 


R 0JC 


- 


- 


- 




- 


1.52 


- 


1.52 


°C/W 



• For p-n-p devices, voltage and current values are negative. 

* In accordance with JEDEC registration data. 

a Pulsed; pulse width < 300 ms, duty factor < 2%. 

b CAUTION: Sustaining voltage, V CE0 (sus), MUST NOT be measured on a curve tracer. 

c Vr R d l D1 = "U 



z 














Tj -2 

VCC"' 
" 'C"B 


•c 
ov 






















































— -"- 






X 4 

x 

" 2 

I 






*■*<;- 








-""""" 


















\' 


1 *T 


V BE 


(off)- 5 V 






8 
6 

2 














































V^^ 








_ 


ZN587I.2N5672 (PNP) 

2N58T3, 2N5874(NPN) 








1 


e 


2 








9 




4 6 7 



COLLECTOR CURRENT (I c >— A 9 , CS . J025 

Fig. 7 — Typical turn-on-time for all types. 




COLLECTOR CURRENT ( £ c )-A MCS-302U 

Fig. 8 — Typical turn-off-time for all types. 



168 



POWER TRANSISTORS 



2N5875, 2N5876, 2N5877, 2N5878 

Silicon N-P-N and P-N-P Epitaxial-Base High-Power Transistors 



Rugged Devices, Broadly Applicable 
For Industrial and Commercial Use 

The RCA-2N5875 and 2N5876 are epitaxial- 
base silicon p-n-p transistors featuring high 
gain at high current. The RCA-2N5877 and 
2N5878 are epitaxial -base silicon n-p-n tran- 
sistors. They may be used as complements to 
2N5875 and 2N5876, respectively. These 
devices have a compability of 150 watts at 
case temperatures up to 25°C. 



MAXIMUM RATINGS, Absolute Values: 



* v CEO 

* v CB0 

* v EB0 

* 'c 

* 'cm 

* 'b 

AtT c <25 C 

AtT c >25°C derate linearly 

* T J' T stg 

* T L 

At 1/16 in. (1.58 mm) from case for 10 s 

•in accordance with JEDEC registration data. 

* For p-n-p devices, voltage & current values are negative. 



They differ in voltage ratings and in 
currents at which the parameters are con- 
trolled. All are supplied in the steel 
JEDEC TO-204MA hermetic package. 



2N5875* 


2N5876* 




2N6877 


2N5878 




60 


80 


V 


60 


80 


V 


5 


5 


V 


10 


10 


A 


20 


20 


A 


4 


4 


A 


150 


150 


W 




w/°c 
°c 


65 


to 200 



Features: 

■ High dissipation capability 

■ Low saturation voltages 

■ Maximum safe-areas-of-operation curves 

■ Hermetically sealed JEDEC TO-3/TO-204MA 
package 

■ High gain at high current 

■ Thermal-cycling rating curve 

Applications: 

■ Series and shunt regulators 

■ High-fidelity amplifiers 

■ Power-switching circuits 

■ Solenoid drivers 



TERMINAL DESIGNATIONS 




JEDEC TO-204MA 



— i 














V 














• 

1 • 

M * 

S i- 

U • 

3 * 
° * 














$i 














Y 


n W 
















M 




T 


C .2S 


•C 






\ w 














































C 


JRVE 


! APF 


LY BELOW R 


kTEO V CE0 












2N5S7S.2N3877 
2NS«7«,2NSS7t 

1 






\\ 




) 


1 


• , 




I 


1 


c 


• in 



100 


s * y \ \ Vjfc 
* 8 \ \ rv%, 

5 J l\ \ \ft. 


2 u^-\- — fe- 


l_j°_ , 1 \hV\ >? l|ft 1 j 1 l> 1 



10 IOO 

COLLECTOR EMITTER VOLTME (Vce»-V MCS-WW4 

Fig. 1 — Collector-emitter voltage (Vq^-V. 



NUMKR OF THERMAL CYCLES (IN THOUSANDS) „ C ,.„» T0 „ 

Fig. 2 — Thermal-cycling rating chart. 



2 




2p 





F* 


V C | 


.,, 


V 




r 

III 

| 

! ■ 

8 

O 10 






















/e 





































































COLLECTOR CURRENT (t c )-A «c»-SOI»S 

Fig. 3 — Typical dc beta characteristics for 
2N5875 and 2NS876. 



169 



POWER TRANSISTORS 



2N5875, 2N5876, 2N5877, 2N5878 

ELECTRICAL CHARACTERISTICS, at Cue Temperature T C -2B°C 
Unlet* Othtrwtoe Spectf tod 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vde 


CURRENT 
Adc 


2N5876* 
2N5877 


2N51 
2N6C 


i7e* 

78 


V C E 


V BE 


Jfi. 


»P 


MIN. 


MAX. 


MIN. 


MAX. 


' 'CEX 


60 
80 


1.5 
1.5 


- 




- 


0.5 


- 


9-5 


mA 


T C -150°C 


60 
80 


1.5 
1.5 


- 


- 


- 


5 


- 


5 


<CEO 


30 
40 


- 


- 






- 


1 


- 


1 


mA 


"CBO 
l E -0 


60C 
80C 


- 


- 


- 


- 


0.5 


- 


0.5 


mA 


■ebo 

l E -0 




-5 








1 


- 


1 


mA 


v CEO< $us > b 


- 


- 


0.2 





60 


- 


80 


- 


V 


h FE a 


4 
4 
4 


- 


1 

4 

10 


- 


35 

20 

4 


100 


35 

20 

4 


100 




Vbe" 


4 


-■ 


4 


- 


- 


1.5 


- 


1.5 


V 


V BE ($at)« 


- 


- 


10 


2.5 


- 


2.5 


- 


2.5 


V 


V CE {sat)« 





- 


5 
10 


0.5 
2.5 


- 


1 
3 


- 


1 
3 


V 


f = 1 MHz 


10 


— 


0.5 


- 


4 


- 


4 


- 


MHz 


h fe 
f=1 kHz 


4 


- 


1 


- 


20 




20 


- 




c ob V CB =10V 

2N5875-76 
f = 1 MHz 2N5877-78 












500 
300 


- 


500 
300 


PF 


V 


- 


- 


4 


0.4d 


- 


0.7 


- 


0.7 


MS 


l s v cc = 30 V 


- 


- 


4 


0.4*1 


— 


1.0 


— 


1.0 


jus 


tf 


- 


- 


4 


0.4d 


- 


0.8 


- 


0.8 


/w 


RflJC 












1.17 


- 


1.17 


°C/W 



* In accordance with JEDEC registration data. • For p-n-p devices, voltages and current values are negative. 

• Pulsed;pulsewidth<300MS-dutycycle<2%. •> CAUTION: Sustaining voltage, V CE0 <sus), AK/S7"A70T 



I00O 

• 

r 






















































vjt .40v 










i^e 


k2°* 






























t « 

9 * 




























































I t 

X K> 






































'■< 


O.I 


i 




i 


' 




< 


* 


'. 



COLLCCTO* CUMCNT ( I c )-* MCS-HIM 

Fig. 4 - Typical dc beta charactarlttics for 
2NB877 and 2N6878. 



SB 


Tj-S»*C 






































« 
2 0.S 
























V ac lM))ATI c /l B <IO 

1 1 1 1 1 












V rt *TV ce .4.0V ^ 








































































— v e 






















Ji- 


















a. * 

COLLECTOR 


CURKCNT (I c l-A 


•2CS-JOII7 



Fig. 5 - Typical voltages for 2NB876 and 2N5876. 



— ITT 

1.2 

1.0 
M 

i*. 
i» 

i 

0.4 
0.t 


l 

.Tj •ZS'C 






































































































<c" 


£ 














v M *w>* T ; 
















>v 


























































































V C lC-»'c'"i"' . 
















" 1 


i i 


M 


H 






J 




H 





"CB 



be measured on a curve tracer. 



"I, 



COLLCCTO* CUMCNT <r C >-A „ e «-joi»i 

Fig. 6 - Typical voltages for 2NS877 and 2NS878. 




•tcs-aom 
Fig. 7 — Typical turn-on-time for all types. 



• 

4 
t 














.V CC .K 
l C /ll 




















• 10 


















t 






«! 


^ 
























V 


•> 


*V 










4 
i 

0.1 












^ >K *« 


s 








'•"^ 












<"s 






















VN 
















,J«_ 


— 


,J 


* 


s 


















2N3477,2NMT»<NPN) 

1 1 1 





1 ' 


< 










4 


t 




1 



COLLCCTOR CURRCNT (X C )— A 

Fig. 8 — Typical turn-off-time for all types. 



170 



POWER TRANSISTORS 



2N5879, 2N5880, 2N5881, 2N5882 



Silicon N-P-N and P-N-P Epitaxial-Base 
High-Power Transistors 



Rugged Devices, Broadly Applicable 
For Industrial and Commercial Use 

The RCA-2N5879 and 2N5880 are epitaxial- 
base silicon p-n-p transistors featuring high 
gain at high current. The RCA-2N5881 and 
2N5882 are epitaxial-base silicon n-p-n tran- 
sistors. They may be used as complements to 
2N5879 and 2N5880, respectively. These 
devices have a dissipation capability of 160 
watts at case temperatures up to 25°C. 



They differ in voltage ratings and in the 
currents at which the parameters are con- 
trolled. All are supplied in the steel 
JEDEC TO-204MA hermetic package. 



Features: 

■ High dissipation capability 

■ Low saturation voltages 

■ Maximum safe-area-of-operation curves 

■ Hermetically sealed JEDEC TO-3/ 
TO-204MA package 

■ High gain at high current 

■ Thermal-cycling rating curve 



Applications: 

■ Series and shunt regulators 

■ High-fidelity amplifiers 

■ Power-switching circuits 

■ Solenoid drivers 



MAXIMUM RATINGS, Absolute-Maximum Values: 

* V CEO 

* V CBO 

* V EBO 

; 'c 

* 'cm 

* 'b 

p-t 

At T c < 25°C 

At T c > 25° C derate linearly 

* T J< T st fl 

At 1/16 in. (1.58 mm) from 

case for 10 s 

* In accordance with JEDEC registration data. 

* For p-n-p devices, voltage and current values are negative 



2N5879* 


2NS880* 




2N5881 


2N5882 




60 


80 


V 


60 


80 


V 


5 


5 


V 


15 


15 


A 


30 


30 


A 


5 


5 


A 


160 


160 


W 

w/°c 
°c 














°C 



TERMINAL DESIGNATIONS 




JEDEC TO-204MA 



100 8 

6 

< 

i 2 

- 10 - 

i . 

1 4 

1 * 


T c .'29« 




















- 
















o 


►. 
















S^» 


to 














^0 


-lj.200 




















k?*^n 
































































\ 


















w 






4 « 

° 4 

2 




































\ 




















\ 


\ 


















\ 


\ 












ZNM7»,ZNM«I — 
2NSM0.2NSM2— 


'_ 










t 


t 


■ 


• 


n 


2 




6 


'ill 



' 100 

• 

» 

1 ■ 

t 

1 - 

< 

M 

O 

C 2 

> 
O 

10 




































^St 










S 
I 


\ 


Nfc 








v 


X 








\\ 




^ 


h 


ill, 2 


\^ 


V ^ 




% 






k 


\ 


•*• 


4 1 



COLLECTOR EMITTER VOLTAGE ( V cc )-V 



•2CS-30202 



Fig. 1 - Maximum operating araas for all types. 



OF THERMALCVCLES (IN THOUSANDS) ttcI . l9 gram 



Fig. 2 — Thermal-cycling rating chart. 



I • 

K 

3 

Ckjo- 

£ • 

3 
O 

8 














VCE 












































. ^ 


*«0 


•c 
















f*^. 






















































































































2 


1 


1 










1 


1 


2 



COLLECTOR CURRENT ( I )— A 



•2CS-30204 



Fig. 3 — Typical dc beta characteristics 
for 2N5879 and 2N5880. 



171 



POWER TRANSISTORS 



2N5879, 2N5880, 2N5881, 2N5882 

ELECTRICAL CHARACTERISTICS, At Case Temperature 
T c - 25°C Unless Otherwise Specified 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N5879* 
2N5881 


2N5880* 
2N5882 


VCE 


v B e 


'c 


'B 


Min. 


Max. 


Min. 


Max. 


> 'CEX 


60 
80 


1.5 
1.5 


— 


— 


— 


0.5 


- 


0.5 


mA 


T c = 150°C 


60 
80 


1.5 
1.5 


: 


- 


- 


5 


- 


5 


'CEO 


30 
40 


— 


— 






— 


1 


— 


1 


mA 


'CBO 
l E =0 


60c 
80c 


— 


_ 


_ 


— 


0.5 


— 


0.5 


mA 


'ebo 


- 


-5 





- 


- 


1 


- 


1 


mA 


V CE0 (sus)b 


- 


- 


0.2 





60 


- 


80 


- 


V 


h FE a 


4 
4 
4 


- 


2 
6 
15 


- 


35 
20 
4 


100 


35 
20 
4 


100 




V BE? 


4 


- 


6 


- 


- 


1.5 


- 


1.5 


V 


V BE (sat)a 


- 


- 


15 


3.75 


- 


2.5 


- 


2.5 


V 


V CE (sat)a 


— 


— 


7 
15 


0.7 
3.75 


— 


1 
4 


— 


1 
4 


V 


f T , f = 1 MHz 


10 


- 


1 


- 


4 


- 


4 


- 


MHz 


h fe , f = 1 kHz 


4 


- 


2 


- 


20 


- 


20 


- 




C ob , f = 1 MHz 
2N5879-80 
2N5881-82 


10C 
10c 


- 


- 


- 


- 


600 
400 


- 


600 
400 


pF 


t s V CC =30V 


- 


- 


6 


0.6d 


- 


0.7 


- 


0.7 


/is 


- 


- 


6 


0.6d 


- 


1 


- 


1 


JUS 


- 


- 


6 


0.6d 


- 


0.8 


- 


0.8 


Ms 


r 0jc 


- 


- 


- 


- 


- 


1.1 


- 


1.1 


°C/W 



*ln accordance with JEDEC registration data. 

*For p-n-p devices, voltage and current values are negative. 

fPulsed; pulse duration ^ 300 ms, duty factor = 2%. 

°CAUTION: Sustaining voltage, V CE q(sus), MUST NOT be measured on a curve tracer. 



i4oo e 

i « 

S 4 

S 

oc 

8s z 
1'°°- 

u 8 

1 « 

a 

$ 

£ 2 
o 
10 






























































c 




















"r^Sl 


c 




25 


c 






























































































































< 


e 


1 




4 


e 




2 



COLLECTOR CURRENT del— A 

92CS-30203 

Fig. 4 — Typical dc beta characteristics 
for 2N5881 and 2NS882. 



z 

16 

§ 12 

> 

< 

5 as 
o 

> 
> 

04 
O 


Tj.2S- 


c 
















/ 




















f 






























































__j^iS^ 












!=== %r*^ 


4V 


































1 




._/.«»»<> ^ 












3Jh 


















< 


e 




2 






I B 


2 



COLLECTOR CURRENT (I C )-A 



92CS-3020S 



Fig. 5 



Typical voltage characteristics 
lor 2N5879 and 2N5880. 



1 
1 

8 
6 

4. 

1 2 

J 0.1. 














Vcc"30V 








































^ 




















V 




^ 






' 




** 






























"^^ 




3E <• 


»fl" 


S 


v 


6 
























^^^ 


















\ 


\ 


"V 








2N388I. 2NS8S2INPN) 

1 1 1 






€ 














. 





92CS-30207 



COLLECTOR CURRENT (I )— A 

Fig. 6 — Typical turn-on time for all types. 



6 

4 

m Z 

r i- 

ui 8 

P • 

2 

01 




























V CC .30V 

i c /i B -o 












--. 




** 
















^? 




•^ 


















^ 






•N.^ 










> 






^^, 


«. 








^» 


<: 


-'^ 








•f 




-^ 


^:. 


r>* 


2N5879, 

2N988I. 

4 • 8 


2N58STKPNP) 
2NS882INPN) 

-1 i i 









COLLECTOR CURRENT (Z c )-» ,2es-j0208 

Fig. 7 — Typical turn-off time for all types. 



2 
16 

w 1.2 

o 

* 0.8 

> 

0.4 



Tj-25'C 


























































































AT 


c' 


lB ..o ^ 












\ Mj 


V 







































V CE (»0l) AT lc 


" 


8jlO___, 












2 




6 


8 




2 




( 






2 



COLLECTOR CURRENT <I r )— A 

c 92CS- 30206 

Fig. 8 — Typical voltage characteristics 
for 2NS881 and 2NS882. 



172 



POWER TRANSISTORS 



2N5885, 2N5886 



High-Current, High-Power, High-Speed N-P-N 
Power Transistors 



The RCA-2N5885 and 2Na886 are epitaxial- 
base silicon n-p-n transistors intended for a 
wide variety of high-power, high-current 
applications, such as power-switching circuits, 
driver and output stages for series and shunt 



regulators, dc-to-dc converters, inverters, and 
solenoid (hammer )/relay drivers. 
These devices differ in maximum voltage 
ratings. They are supplied in JEDEC TO- 
204MA hermetic steel packages. 



Features: 

■ Specification for hpg and VQ E (sat) up to 25 A 

■ Current gain bandwidth product 
f T » 4 MHz (min.) at 1 A 

■ Low saturation voltage with high beta 

■ High dissipation capability 

■ 90 mJ Eg/b characteristic 



MAXIMUM RATINGS, Absolute-Maximum Values: 

2N5885 2N5886 

*V CB « 80 

*V CEO (sus) 60 80 

* v EBO 5 

* l c 25 

*'CM 50 

•■b • 7 - 5 

'bm 15 

*P T 

At T c < 25°C 200 

AtT c >25°C .... Derate linearly 1.15 

See Figs. 1 and 2 

*T stg ,Tj 65to200 

At distance > 1/32 in. (0.8 mm) from 

seating plane for 10 s max 230 

* In accordance with JEDEC registration data format JS-6 RDF-1 . 



TERMINAL DESIGNATIONS 



V 
V 
V 
A 
A 
A 
A 

W 
W/°C 

°C 



°C 




COLLECTOR- TO- EMITTER VOLTAGE! V CE )-V 

92CS-29846 

Fig. 1 — Maximum operating areas for 2N5885 and 2N5886. 




JEDEC TO-204MA 



s *5 



NOTE: CURRENT DERATING »T CONSTANT VOLTAOT ; 

APPLIES ONLY TO THE DISSIPATION-LIMITED PORTION 
AND I«/ b -L«IITED PORTION OF MAXIMUM-OPERAHN0 
AREA-CURVES. 00 NOT 0ERATE THE SPECIFIED \»LUE 
FOR lc »*X 




25 SO 79 100 I2S ISO 175 200 
CASE TEMPERATURE (T c >— »C 



Fig. 2 - Derating curves for 2NS88S and 2NS886. 



■row; 
































* 4 

o 

i * 

Bioo- 

b. • 

s • 

1 4 

i z 

I • 

£ ! 
O 1 










f"«fT —I 




















«5»c_ 


3x, 
























si: 


& 


> 






































































V*\. 


























































































































\ 
























































t « 




• 




I 


% 


1 * 




I 


« 


• t 



COLLECTOR CURRENT (X. c )— A 

MCS-2M45 

Fig. 3 — Typical dc beta characteristics as a func- 
tion of collector current for 2NS88S and 
2N5886. 



173 



POWER TRANSISTORS 



2N5885, 2N5886 



ELECTRICAL CHARACTERISTICS, At Case Temperature <T C )=2S°C 
Unless Otherwise Specified 



CHARAC- 
TERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N5885 


2N5886 


V C E 


v B e 


'c 


>B 


Min. 


Max. 


Min. 


Max. 


r CBO 


60 a 
80 a 








- 


1 


- 


1 


mA 


'CEX 


60 
80 


-1.5 
-1.5 






_ 


1 


_ 


1 


'CEX 
T C =150°C 


60 
80 


-1.5 
-1.5 






_ 


10 


_ 


10 


'ceo 


30 
40 








— 


2 


— 


2 


'ebo 




-5 






- 


1 


- 


1 


hFE 


4 
4 
4 




3^ 
10 b 
25 b 




35 
20 
4 


100 


35 
20 
4 


100 




V CE0 (sus) 






0.2 




60 


- 


80 


- 


V 


Vbe 


4 




10 




- 


1.5 


- 


1.5 


V BE (sat) 






25 b 


6.25 


- 


2.5 


- 


2.5 


V CE (sat) 






15^ 
25 b 


1.5 
6.25 


- 


1 
4 


- 


1 
4 


'S/b 

t p =1s 
nonrep. 


20 








10 


- 


10 


- 


A 


E S/b 
L= 125 //H, 
R BE = 51 ft 




-1.5 


10 




6.25 


- 


6.25 


- 


mj 


L = 20mH, 
R BE = 100 J2 







3 




90 


- 


90 


- 


l h fe| 
f = 1 MHz 


10 




1 




4 


- 


4 


- 




h fe 
f = 1 kHz 


4 




3 




20 


- 


20 


- 


C bo 
f =1 MHz 


10 a 








- 


500 


- 


500 


pF 




v C c = 

30 




10 
10 
10 


1 

1 c 
1 c 


: 


0.7 

1 

0.8 


; 


0.7 

1 

0.8 


(JS 


R 0jc 


20 




5 


- 


0.875 | - 


0.875 


°e/w 



In accordance with JEDEC registration data format JS-6 RDF-1 . 
bpulsed; pulse duration = 300 ps, duty factor = 1 .8%. 




COLLECTOR-TO-EMITTER SATURATION VOLTASE [v CE (Mt)J-V 



Fig. 4 — Typical saturation voltage characteristics for 
2N5885 and 2N5886. 



30 


COLLECTOR-TO-EMITTER VOLTASE (V CE )-4V ||||||||| 








lllllllllllllllllllffy 












J 20 










% 








p^jii 


3 is 
i 








iH 


u 10 








V^ifrr^H 










fflrT J lTrTrtfi 






















s 










( 


) 0.2 0.4 




06 at 


1 14 1.4 



BASE-TO-EMITTER VOLTAeEWejl-V 

MCS-2M4T 

Fig. 5 — Typical transfer characteristics for 
2N5885 and 2N5886. 



1 

• 

c 
X 

4 * 

I ' 

So, 


COLLECTOR SUPPLY VOLTAGE 


Vfcc)"30V 










ic/xs*io 


















ci- 
















,, 
























































































•4 
















s 

i 2 

OjOI 




















































K 


^ 


4 1 




>KX 



COLLECTOR CURRENT <!<;)— A »2CS-i 

Fig. 6 — Typical delay-time and rise-time 
characteristics as a function of 
collector current for 2N5885 
and2NS886. 





COLLECTOR SUPPLY VOLTASE 


Vtacl-sov 








1*1 -X*t 

IC/Is-IO 

CASE TEMPERATURE (Tc)-2S*C 








































■>jt 




















V 








































- 


























1 * 

i * 

0.1 












s 


\ 


































1 




K 


9 


! 


1 




K» 



174 



COLLECTOR CURRENT <I C >— A •«• 

Fig. 7 — Typical storage-time and fall-time 
characteristics as a function of 
collector current for 2NS888 
and 2NS886. 



POWER TRANSISTORS 



2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829-40831 

Silicon N-P-N and P-N-P Medium-Power Transistors 



General-Purpose Types for Switching Applications 



RCA-2N5954, -2N5955, and -2N5956 are 
multiple-epitaxial p-n-p transistors. RCA- 
2N6372, -2N6373, and -2N6374 . are multi- 
ple-epitaxial n-p-n transistors. They are com- 
plements to 2N5954, 2N5955, and 2N5956. 

The RCA-2N6465 and 2N6466 are multiple- 
epitaxial n-p-n transistors. They are comple- 
ments to the 2N6467, and 2N6468 , multiple- 
epitaxial p-n-p transistors. These devices 
differ in voltage ratings and in the currents 
at which the parameters are controlled. 

All are supplied in the JEDEC TO-66 package. 



Types 2NS954, 2N5955, and 2N5956 are 
available with factory-attached heat radiators 
as RCA types 40829, 40830, and 40831, 
respectively. The other devices may be 
obtained with heat radiators on special order. 
Radiator versions are intended for printed- 
circuit-board applications, and differ electri- 
cally from their basic counterparts only in 
device dissipation (5.8 W up to 25° C ambient) 
and thermal resistance (30°C/W max. at T^ 
* 25°C). 



hQQtUfGS* 

■ 2N5954-2NS956 complements to 2N6372-2N6374 

■ 2N6465, 2N6466 complements to 2N6467, 2N6468 

■ Low saturation voltages 

■ Maximum-safe-area-of -operation curves 

■ Thermal-cycle ratings 

■ Hermetically-sealed JEDEC TO-66 package 

TERMINAL DESIGNATIONS 



MAXIMUM RATINGS, Absolute4Aaximum Vdue$: 

N-P-N 2N8374 

P-N-P 2NM66JT 
40831* 

*VCB0 60 

^eexl*"*' 

\ BB - -1.6 v, r be - 100 n 60 

T* BE -ioon 46 

v CEO ( « ut) *° 

•VEBO 5 

*I C • 6 

*'B • 2 

*T 

At T c up to 25°C 40 

(2N6374) 
(2N6966I 

At T A up to 25°C 5JB 

(40831) 
At T c above 25°C 

^TrtQ 

At distances > 1/32 in. (0B mm) from 
—ting plane f or 10 s max ^— — 

*JEDEC types in accordance with JEDEC registration data 

*For p-n-p devices, voltage and current values ara negative. 



2IM8373 2N6372 2N6465 



70 

70 

85 
80 
5 

6 
2 



40829' 

90 



90 

86 
80 
5 
6 
2 



110 

105 

100 

5 

4 

2 



40 40 
(2N6373) (2N6372) 
(2N6966) (2N5954) 
SB SB 
(40830) (40829) Q 
-Derate linearly to 200 C 
-85 to +200 



40 



+235 

format JS-6-ROF-2. 



2N6466 



2N59BB* 2N6964? 2N6467* 2N6468* 

130 



130 

125 

120 

5 

4 

2 



40 w 
W 

ZZ °c 



°c 




it dec To-ee 

2Ne372-2N8374. 2N«4e«-2Ne4ee 




(HEAT RADIATOR) 



JEDEC TC-68 with HMt Rakkrtor 
4082a. 40830. 40831 




CASE OB AMBIEMT TEMPERATURE ( T c OR T A )— »C 



Fig. 1 - Dissipation derating chart for all types. 




NUMRER or THERMAL CTCLM 



Fig. 2 ■ Thermal-cycling rating chart for 
all types. 





»LLECTOR-TO- EMITTER VOLTAM IVct)»«V-U-| 1 II 1 111 11 


1 




if 






- ■ 7»yf ifll 1 1 1 1 1 1 It inTTf II 1 HH 

M ll 


1 no 




W\\\\\\ \\\\\\\wM 


2*0 


ill 


"Am 1 11 1111 llllllllllll 


' — 1 


fflr"^ 


1 I.S 



EASE- TO- EMITTER V0LTA0E(V it l-V 

•tLS-S»MI 

Fig. 3 - Typical input characteristics for 
2N59S4-56, 2N6372-74 and 
40829-31* 
*For p-n-p devices, voltage and current values are negative. 




COLLECTOR-TO-EMITTER VOLTAOE (VCEl — V 

Fig. 4 - Typical output characteristics for 
2N5954-56, 2N6372-74 and 
40829-31* 



175 



*J 



POWER TRANSISTORS 



2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829-40831 

ELECTRICAL CHARACTERISTICS, At Case Temperature (T c ) * 2S°C unless otherwise specified 



CHARACTERISTIC 


TEST CONDITIONS* 


LIMITS 


U 
N 

.» 
T 
S 


VOLTAGE 
Vdc 


CURREN1 
Adc 


111 

♦5* 


2N6373 

2N5955+ 

40830+ 


2N6372 

2N5954* 

40829+ 


V C E 


vbe 


•c 


>B 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


'CER 

R BE =ioon 


35 
55 
75 








- 


100 


- 


100 


- 


100 


JUA 


1 
'CEX 

R BE =100ft 


45 
65 
85 


-1.5 
-1.5 
-1.5 






— 


100 


- 


100 


- 


100 


MA 


R BE =100U 
T C =150°C 


45 
65 
85 


-1.5 
-1.5 
-1.5 






- 


2 


- 


2 


- 


2 


mA 


'CEO 


25 
45 
65 








- 


1 


- 


1 


— 


1 


mA 


>EBO 




-5 






- 


0.1 


- 


0.1 


- 


0.1 


mA 


hFE 


4 
4 
4 
4 




3a 
2.5a 
2a 
6a 




20 
5 


100 


20 
5 


100 


20 
5 


100 




V CE0 <sus) 






0.1a 




40b 


- 


60b 


- 


80b 


- 


V 


V CER (sus) 
R BE =100fi 






0.1a 




45b 




65b 




85b 




V CEX (sus) 
R BE =100ft 




-1.5 


0.1a 




50b 


_ 


70b 


_ 


90b 


_ 


vbe 

All types 
All types 
All types 
2N6372-2N6374 


4 
4 
4 
4 




3a 
2.5a 
2a 
6a 




- 


2 
3 


- 


2 
3 


- 


2 
3 


V 


V CE (sat) 
2N5954-2N5956 






33 
2.5a 
2 a 
6 


0.3 

0.25 

0.2 

1.2 


-' 


1 
2 


- 


1 
2 


- 


1 
2 


V 


hfe| 

f=1 MHz 

2N6372-2N6374 

2N5954-56.40829-31 


4 
-4 




1 
-1 




4 
5 


- 


4 
5 


- 


4 
5 


- 




h fe 

f=1 kHz 


4 




0.5 




25 




25 




25 






R 0JC 

2N5954-56, 
2N6372-74 










- 


4.3 


- 


4.3 


- 


4.3 


°C/W 


R 0JA 

40829-40831 










- 


3o 


- 


30 


. 


30 



In accordance with JEOEC registration data format JS-6 RDF-2 for JEDEC (2N5954-2NS956 
2N6372-2N6374 2N6465-2N6468 40829-40931 ) types. 

For p-n-p devices, voltage and current values are negative. 

a Pulsed, pulse duration = 300 /is, duty factor = 1 £%. 

b CAUTION: Sustaining voltages V C£0 (sus), V CER (sus),and V CEX (sus) MUST NOT be measured 
on a curve tracer. 



I 

u 4 

! 5 
& * 


CaOECTOft-TO-EMITTCII VOlTtOC IV 


«-!■ 4V II Hill Ml 




























: j4p? 


-ft 












- ^/Ht 








,;/ |/| 






























5 




















I*- 











































MSE-TO-EMITTER VOLTaOE (V re ) — V 

92LS- 992SRI 

Fig. 5 - Typical transfer characteristics for 
2N5954-56, 2N6372-74 and 
40829-31* 



"Ei ' 




































1 1 












S 

5 • 






























f2'^.l 










._M;e S 


sl c 




























juKXH 


























2 ! 




























< 




















S . 

1 ID 






















































*> • 

s • 






















































































































































1 











COLLECTOft CURRENT (I c )— * 

92CS-26MI 

Fig. 6 - Typical dc beta characteristics for 
2N6467 and 2N6468. 



5 400 
















VOLTMi (Vcc) ■- 


4V 
















■c*» 


1 II 


















jJCUPCIWTUI 


^Si, 


^L 






















1 = 

r 

8 

10 












iPS 






















-40"<5 


s 


1 


■V 
























X, 


























^ 


^ 


























^ 




J 


J 


' J 


ri 


J 


J 




a 


— ^ 




J 





-0.01 -0.1 -t -K 

COUfCTD* C U HM U T (IeJ-4 

ttci-ieooe 

Fig. 7 - Typical dc beta characteristics for 
2N5954-2N5956 and 40829-40831. 



I* 00 

« 200 
I 100 

S so 

1. «° 

1 *° 
§ M 
s s 


COLLtXTOR-TO-ttRTTeR VOLTMC (Veil ' 4 V 








1 

CASE TEH 


M 

KfUTU 


RCIT C ).I2S»C 
























^9*C 






































s 


















_, -40«C 






sv 


















^« 


«• 





vS. 






















N 


^ 


is 






















^ 


^ 


^ 
















































v 










a 








i a 








a 



For p-n-p devices, voltage and current value* are negative. 



COLLECTOR CURRENT (I c >— « 

•2CS-IS66SRI 

Fig. 8 - Typical dc beta characteristics for 
2N6372-2N6374. 



176 



POWER TRANSISTORS 



2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829-40831 



ELECTRICAL CHARACTERISTICS, At Case Temperature (T C )=2S°C 

unless otherwise specified 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6465 
2N6467* 


2N6486 
2N6468+ 


V C E 


v B e 


■c 


>B 


Min. 


Max. 


Min. 


Max. 


'CER 

R BE = ioon 


95 
100 








- 


100 


- 


100 


M A 


'CEX 

R BE = ioon 


100 
120 


-1.5 
-1.5 






— 


100 


_ 


100 


ma 


R BE = 100ft, 
T C =150°C 


100 
120 


-1.5 
-1.5 




■ 


- — 


2 


_ 


2 


mA 


'ceo 


50 
60 








- 


1 


: 


1 


mA 


'ebo 




-5 






- 


0.1 


- 


0.1 


mA 


*FE 


4 
4 




1.5a 
4 a 




15 
5 


150 


15 
5 


150 




V CE0 (sus) 






0.1a 




100b 


- 


120b 


- 


V 


V CER (sus) 
R BE = 100J2 






0.1a 




105b 


_ 


125b 


_ 


V CEX (sus) 

R BE = ioon 




-1.5 


0.1a 




110b 


_ 


130b 


_ 


v B e 


4 
4 




1.5a 
4a 




- 


2 
3.5 


_ 


• 2 
3.5 


V 


All types 
V CE (sat) 2N6465-2N6466 
2N6467-2N6468 






1.5a 

4a 

-4a 


0.15 

0.8 

-0.8 




1.2 

3* 
_4* 


- 


1.2 

3* 
-4* 


V 


Ihfel 

f = 1 MHz 


4 




1 




5 




5 






h fe 

f = 1 kHz 


4 




0.5 




25 


_ 


25 


_ 




R 0JC 










- 


4.3 


- 


4.3 


°c/w 



* In accordance with JEDEC registration data 
format JS-6 RDF-2. 

♦ For p-n-p devices, voltage and current values 
are negative. 



a Pulsed, pulse duration = 300 ms, duty factor = 1 .8% 
b CAUTION: Sustaining voltages V CE q(sus), V CEf j(sus), 
and Vqpy(sus) MUST NOT be measured on a curve tracer. 





COLLI 




























1 1 1 1 1 






















li^r^Tl 




25 -C -* 
























































































8 














































































































B 8 















COLLECTOR CURRENT drl — A 

Fig. 9 - Typical dc beta characteristics for 
2N6465 and 2N6466. 



i 20 

a 


COLLECTOR 


TO 


EMITTER VOLTAGE (V CE |. 


4V 




























1 " 

£ 16 

s » 

1 . 

» 

i * 

< 

f 6 

X 

3 « 

2 












































































































































































































































































































' 





COLLECTOR CURRENT ll c ) — A 



Fig. 10- typical gain-bandwidth product for 
2N59S4-56, 2N6372-74, 2N6467-68, 
and 40829-31. (For p-n-p devices, 
voltage and current values are negative.) 



300 

e zso 

-200 

£ 

« ISO 

S ioo 
so 
9 
















































-If 
















-T 






































wH*rnt 














u 












































: ? 
















rS | 































































































































BASE-TO- EMITTER VOLTAGE (V BE I— V 

92CS-223S2 

Fig. 1 1 - Typical input characteristics for 
2N6465 and 2N6466. 




• 

i » 

I , 
1 j 


- 




















































• 






















- 




















\ 


S 
| s 


COLL 
" CAS 


ECTOR - 
TEMPE 


T0-£ 

RAT 


MM 
JRE 


TE 
11 


R VOLTA 
C»'25't 


0EIVCE 


■4 V 








































8 








• 




2 



Fig. 12 - Typical input characteristics for 
2N6467 and 2N6468. 



COLLECTOR CURRENT (I c l-A , K s-2 M * 

Fig. 13 - Typical gain-bandwidth product 
for 2N6465 and 2N6466. 



7 
I? * 

i< 

e 

8 

i 












CMC TEMPERATURE (T C )-29*C 














111 Hill IItHtt'* 8 


iCU 






*""*: 1 1 1 1 ffr " 


MEN 


LiiSiiirf 






ISO! 

:ioo 




i;JJ 40 W(-[-- 






*S : 









































































Fig. 14 - Typical output characteristics for 
2N6465 and 2N6466. 



177 



POWER TRANSISTORS 



2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829-40831 




COLLECTOR-TO-EMITTER VOLTAGE (V C e>— V 

»SCS-2«S43 

Fig. 15 • Maximum operating areas for 2NS954-56, 2N6372-74, 
and 40829-31* 




4 5.8 B 2 31.3 40 6 8 

10 ICO 

COLLECTOR-TO-EMITTER VOLTAGE (V C E>— V 



92CS- 26838 



Fig. 16 - Maximum operating areas for 2N646S and 2N6466. 




6 8 -I20 2 
-I -K> -30 tIOO 

CQLLECTOR-TO-EMITTER VOLTAGE (V C E>— V 

92CS-26560 

Fig. 17- Maximum operating areas for 2N6467 and 2N6468. 




-2 -4 -6 -8 -0 -12 -14 
COLLECTOR-TO-EMITTER VOLTAGE <V C E>— V 

Fig. 18 - Typical output characteristics for 
2N6467 and 2N6468. 




For p-n-p devices, voltage and current 
values are negative. 



BASE-TO-EMITTER VOLTAGE (VbeI— V 

92CS-26S66 

Fig. 19 - Typical transfer characteristics 
for 2N6467 and 2N6468. 



178 



POWER TRANSISTORS 



2N5954-2N5956, 2N6372-2N6374, 2N6465-2N6468, 40829-40831 



l 

* 
< 


COLLECTOR- TO- EM 


TTER 


«PLTAG 


l»CE 


. 4v 


~r 


:::t 














■::fr 


















-! r [X 












"t-^-f 


X «r+H 


i ll i ' ' 




'TTtf 


i « 








































</*! 






-14| 












° 3 

| 

i 




ft* 


?fn 


"*fr 






































Wf 















































































































BASE-TO-EMITTER VOLTAGE(V B£ l — V 

92CS-??9! 

F/'flr. 20 - Typical transfer characteristics 
for 2N6465 and 2N6466. 



j COLLECTOR SUPPLYVOLTAGE (V CC )--30V 
E TEMPERATURE (T C |.28*C 
•I c "0 




COLLECTOR CURRENT II C ) — A ~-™» 

Fig. 21 - Typical saturated switching 

characteristics for 2N5954-S6 
and 40829-31. 




COLLECTOR CURRENT ( l c ) — A 



Fig. 22- Typical saturated switching 
characteristics for 2N6372- 
2N6374. 



\ 2.5 

1 


COLLECTOR SUPPLY VOLTAGE (VcCl'SOVf 
CASE TEMPERATURE (T C )-25«C f 
I B |-lB2'IC/IO f 


























I 2 

I 

x 1.5 

i i 

0.5 






TU 


"*-OFF £- 














?E3 






Tm+CJ2 


gisgife. 






















*> 








zt: 






9*1 r™ 


































^Sft 4 *** 


















-»-("- 


H * I - 


illllllllinr.TVr 













COLLECTOR CURRENT (I{>)— A 

F/gr. 23- Typical saturated switching 
characteristics for 2N6465 
and 2N6466. 



12 

1 


•Fit: 


Hi 


::;: 


COLLECTOR SUPPLY 
CASE TEMPERATURE 


(T C> 


GE (V cc 
25-C 


)>-30V 




jtj 


■3» 






















+ 


HH^h 


-J-.,- 


♦ ..- 






:H 








h Ht 








§ 06 










Tfn>K^» 






Ilii: 


.|ij|: 








"tsJV.,— 




















K&ff 






iiii 


411;- 








ITt+S^ 


^rrt 


* 04 
2 


















"th 
















ff " 


t 








ru 


IN-ONT 


MEl'OH'LLL 

























































COLLECTOR CURRENT dc) — A 

Fig. 24 - Typical saturated switching 
characteristics for 2N6467 
and2N6468. 



179 



POWER TRANSISTORS 



2N6032, 2N6033 

High-Current, High-Speed, High-Power Transistors 



Silicon N-P-IM Types 

For Switching and Amplifier Applications 

in Military, Industrial, and Commercial Equipment 

RCA Types 2N6032 and 2N6033* are epitaxial silicon 
n-p-n transistors having high-current and high-power handling 
capability and fast switching speed. The 2N6033 is similar to 
the 2N6032; they differ in maximum values for continuous 
collector current and sustaining voltage. 
They are supplied in modified TO-3 hermetic steel packages 
with 0.60-in. diameter pins. 

"Formerly RCA Dm. Types TA7337 and TA7337A, respectively. 



Applications: 

■ Switching-control amplifiers 

■ Power gates 

■ Switching regulators 

■ Power-switching circuits 

■ Power oscillators 

■ DC-RF amplifiers 
* Converters 

■ Inverters 

■ Control circuits 



Features: 

■ Low VcE(sat) - 1.0 V max. at 40 A, 1.3 V max. at 50 A 

■ Maximum Safe-Area-of -Operation Curve. . . Ig/b limit line beginning at 24 V 

■ Fast Storage Time . . . t, - 1.5 lis max at lc = 40 A (2N6033) 50A (2N6032) 

■ High-Current Capability . . . VcE<<*t> & VfjE measured at lc - 40 A (2N6033) 

-50 A (2N6032) 

■ High Pj (140 W max. atTc-25°C) 

MAXIMUM RATINGS, Absolute Maximum Values: 

2N6032 2N6033 

• COLLECTOR-TO-BASE VOLTAGE . . V CB0 120 150 V 
COLLECTOR-TO-EMITTER 

SUSTAINING VOLTAGE: 

With base open V CE0 (sus) 90 120 V 

With external base-to-emitter 
resistance (R BE )< 50f2 V CER (sus) 110 140 V 

• With external base-to-emitter 

resistance <Rbe'< 50 ^ * 

V BE =I 5 v V CEX (sus) 120 

• EMITTER-TO-BASE VOLTAGE V £B0 7 

• CONTINUOUS COLLECTOR CURRENT ^ 50 
« BASE CURRENT I B ) 

• IEMITTER CURRENT I E 50 

• TRANSISTOR DISSIPATION: p T 

At case temperatures up to 25°C 

and Vf.£ up to 24 V 

At case temperatures above 25 C 
TEMPERATURE RANGE: 

Storage & Operating (Junction) ... 
PIN TEMPERATURE (During Soldering) 
At distances > 1/32 in. (0.8 mm) 
from seating plane for 10 s max ... 



150 V 

7 V 

40 A 

10 A 

40 A 



140 140 W 
Derate linearly to 200°C 



-65 to +200 °C 



230 



*ln accordance with JEDEC registration data format JS-6 RDF-1. 








COLLECTOR-TO-EMITTER VOLTAGE (V CE )— V 
Fig. 1 - Maximum operating areas for both types. 



92CS-I6020RI 



TERMINAL DESIGNATIONS 

C 
(FLANGE) 




Modified JEDEC TO-3 



140 

£ 120 

o 

i 100 

V. 
| eo 

1 " 
n in 


COLLECTOR-TO-EMITTER VOLTAGE (V c e)'2 •» V 


1 1 
IC-SOA 
MAX ^ 




































M 












Vic -40 A 








At 


9- 




P 












U2N6033) 




j 





f 






i 






























J" 


•c 


















1 " 

s o 






































































• 






l S I 




1 * 


• 




♦ 


« ■ 



COLLECTOR CURRENT (I c )— A 

•2CS-II 

Fig. 2 - Typical dc-beta characteristics 
for both types. 



60 

I a. 

5 40 

i 
s 30 

J 20 

8 

10 


COLLECTOR-TO-EMITTER VOLTAGE (V C E>- 2 V 1 1 1 1 1 1 1 1 Ijj" - 








-144+ i +4444. - 














^rUfrn 




1 1 1 1 1 1 1 I-P3 










wtgi 


mm 





3.6 08 I 12 1.4 16 18 



Fig. 3 - Typical transfer characteristics 
for both types. 



180 



POWER TRANSISTORS 



2N6032, 2N6033 



ELECTRICAL CHARACTERISTICS, Case Temperature (Trj) - 2S°C Unless Otherwise Specified 



CHARACTERISTIC 




TEST CONDITIONS 


LIMITS 


UNITS 


SYMBOL 


VOLTAGE 
V dc 


CURRENT 
A dc 


2N6032 


2N6033 




VCE" 


v B e 


■c 


'B 


vlin. 


Max. 


Win 


Max. 


Collector-Cutoff Current: 
With base open 


'CEO 


80 


- 


- 





- 


10 


- 


10 


mA 


Witn base-emitter 
junction reverse biased 


'CEV 


110 
135 


-1.5 
-1.5 


- 


- 


- 


12 


- 


10 


mA 


T C = 150°C 


100 


-1.5 


_ 


- 


- 


15 


_ 


10 


mA 


Emitter-Cutoff Current 


'ebo 


" 


-7 





- 


- 


10 


- 


10 


mA 


Collector-to-Emitter 
Sustaining Voltage: 
(See Figs. 12 & 131 
With base open 


V CE0 (sus) 


" 


- 


0.2 b 





90 a 


- 


120 a 


- 


V 


With external base to emitter 
resistance (R BE ) < 50 Q 


V CER (sus) 


" 


" 


0.2 b 





110 a 


- 


140 a 


- 


With base-emitter junction reverse 
biased & R BE <50H 


V CEX (susl 


- 


-15 


2 b 





120 a 


- 


150 a 


- 


Base-to-Emitter Saturation Voltage 


V BE (sat) 


_ 


_ 


50b 

40 b 


5 
4 


_ 


2 


- 


2 


V 


Base-to-Emitter Voltage 


V B E 


2 
2 


- 


50 b 
40 b 


- 


: 


2 


~ 


2 


V 


Collector to-Emitter 
Saturation Voltage 


V CE (sat) 


- 


- 


50b 
40 b 


5 
4 


- 


1.3 


- 


1 


V 


DC Forward-Current Transfer Ratio 


h FE 


2.6 
2 


_ 


50 b 
40 b 


" 


10 


50 


10 


50 




Second-Breakdown Collector Current 
With base forward biased , t = 1 s 
non repetitive 


's/b 


24 
40 


- 


- 


: 


5.8 C 
9 c 


- 


5.8 C 
0.9 C 


- 


A 


Second -Break down Energy 
With base reverse biased 
(L = 310>iH. R BE = 5J2I 


E S/b 


- 


-4 


20 


- 


62 


- 


62 


- 


mj 


Magnitude of common-emitter 
small-signal, short-circuit, 
forward-current transfer ratio 
f = 5 MH7 


M 


10 




2 




10 


- 


10 


- 




Gain-Bandwidth Product 
f = 5 MHz 


<T 


10 


" 


2 


- 


50 


- 


50 


- 


MHz 


Output Capacitance: 
V C B = 10 V, f - 1 MHz 


^obo 


- 


- 


- 


" 


- 


800 


- 


800 


pF 


Thermal Resistance 
(Junction to-Casel 


R0JC 


10 


- 


10 


- 


- 


1.25 


- 


1.25 


°C/W 



*ln accordance with JEDEC registration format JS-6 RDF-1. 

* CAUTION: The sustaining voltages V CEO lsusl, V CER (sus), and V CEX (sus) MUST NOT be measured c 
b Pulsed: Pulse duration 300 fis; duty factor < 2%. 



SWITCHING TIME CHARACTERISTICS, Case Temperature (Tc) = 25°C 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
V dc 


CURRENT 
A dc 


2N6032 


2N6033 


VCE 


VBE 


ic 


<B 


Min. 


Max. 


Min. 


Max. 


Saturated Switching Time: (Vcc = 30V, 
IB1 = lB2): 
Rise Time 


V 


- 


- 


50 
40 


5 
4 


- 


1 


- 


1 


V* 


Storage Time 


ts 


- 


- 


50 
40 


5 

4 


- 


1.5 


: 


1.5 


J« 


Fall Time 


tf 


_ 


- 


50 
40 


5 
4 


_ 


0.5 


_ 


0.5 


MS 















CASE TEMPERATURE (T c )-25 






















































90 

i 30 

3 20 

u 10 
t 






TTTTTT" 
















\\\\\\\\A U*TI 






























^» | | | | 1 | | - 


















riiili'T 






























ENTCIbI -0.29 




-1 L^nLsrT*TT III 1 1 1 SASE CURfl 


? | 11 1 | 1 I II I - 











































COLLECTOR-TO-EMITTER VOLTAGE (V(; E I — V 

Fig. 4 - Typical output characteristics 
for both types. 



6 

I ' 
- 4 

1 » 

* 2 


COLLECTOR-TO-EMITTER VOLTAGE IVffl-gvhH 1 1 1 1 1 1 1 """ 








1 1 1 1 1 1 1 1 j 1 1 1 1 1 1 1 1 1 1 I 1 1 1 1 ' — 










II \i,~" 


1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1+ 1 + 


























■IMJ^yiini i 


ttpfflffl 


lllbu» 








•♦25-cl-H-l 1 1 1 1 1 1 1 Iff 



0.2 0.4 06 OS I 1.2 1.4 1-6 I.S 

BASE -TO-EMITTER VOLTAGE IVgEl—V 

92CS-IT4S0 

Fig. 5 - Typical input characteristics 
for both types. 



V 

z IS 

8 io 

i 
I 5 




CASE TEMPERATURE IT C |.25"C 
SERIES BASE RESISTANCE IR BE I-Sa 
























A« 




















5\ 




















% 


% 




















1 1 




^-^ 









Fig. 6 - Maximum reverse-bias second- 
breakdown characteristics for 
both types. 



Z 140 

3S ,3 ° 
"i 

if 120 

ij"0 

r' 00 

»o 


CASE TEMPERATURE IT C |. 25 »c 




























1 














^°„ 














































VCER 


MM) 








































^ 


*> 






































.. * 


EO 


1U 


) 


i 



















i 






r^~1 




~l 


,n 



EXTERNAL BASE-TO-EMITTER RESISTANCE (Rgjl— 

92SS-»54RI 

Fig. 7 - Collector-to-emitter sustaining 
voltage characteristics for both 
types. 



181 



POWER TRANSISTORS 



2N6032, 2N6033 




I " " " 10 " " " 100 

COLLECTOR-TO-EMITTER VOLTAGE (V CE ) — V 



Fig. 8 - Maximum operating areas for both types at case temperature (Tq) ; 
100°C. 



1.6 
1.2 

T 

P o.a 

0.4 





COLLECTOR SUPPLY VOLTAGE (V cc l . 30 V 

i c -ioi B| --ioi B2 


""^^ 
































""*-< 










































.122 
















ti 



























10 20 30 40 50 60 TO 

COLLECTOR CURRENT II C I — A 

92CS- 17448 



Fig. 9- Typical saturated switching 
characteristics for both types. 



100 

I 4 


CASE TEMPERATURE (T C ]-2S'C 

BASE -TO- EMITTER VOLTAGE 1V BE I--4V 












CTANCEIL 


)>400MH 








NO 




^^^ 










1 4 










600 




































2000 
























3000 




(J • 































































SERIES BASE RESISTANCE (R BE > — <l 

Fig. 10 ■ Maximum reverse-bias second- 
breakdown characteristics for 
both types. 



182 



POWER TRANSISTORS 



2N6077-2N6079 



High-Voltage, High-Power Silicon 
N-P-N Transistors 

For Switching and Linear Applications 



RCA 2N6077, 2N6078 and 2N6079 are 
multiple epitaxial silicon n-p-n power 
transistors utilizing a multiple-emitter- 
site structure. Multiple-epitaxial construc- 
tion maximizes the volt-ampere charac- 
teristic of the device and provides fast 
switching speeds. Multiple-emitter-site de- 
sign ensures uniform current flow through- 
out the structure, which produces a high 
'S/b anc ' a ' ar 9 e safe-operation area. 
These devices use the popular JEDEC 
TO-66 package; they differ mainly in vol- 
tage ratings, leakage-current limits, and 
VQg(sat) ratings. 

The 2N6077 is characterized for switching 
applications with load lines in the active 
region. These applications include sweep 
circuits and all circuits using the transistor 
as an active voltage clamp. 

Type 2N6078 is characterized for switch- 
ing applications with the load line extend- 
ing into the reverse-bias region. Its voltage 



ratings make this device useful for switch- 
ing regulators operating directly from a 
rectified 1 10-V or 220-V power line. The 
unit is rated to take surge currents up to 
5 A and maintain saturation. 

The 2N6079 is characterized for use in 
inverters 'operating directly from a recti- 
fied 110-V power line. The leakage cur- 
rent is specified at 450 volts; therefore 
the device can also be used in a series 
bridge configuration on a 220-V line. The 
V^BO ratin 9 of 9 volts eases requirements 
on the drive transformer in inverter appli- 
cations. Storage time, an important factor 
in the frequency stability of an inverter, 
is specified in Fig. 1 1 , which shows varia- 
tion in storage time with variation in load 
current from zero to maximum (4 A). 



Features: 



Maximum safe-area-of-operation 

curves 

Low saturation voltages 

High voltage ratings: 

V CER (sus) - 300 V (2N6077) 
275 V (2N6078) 
375 V (2N6079) 

High dissipation rating: Pf ■ 45 W 



TERMINAL DESIGNATIONS 




MAXIMUM RATINGS, Absolute-Maximum Values: 

•COLLECTOR-TO-BASE VOLTAGE V CB0 

COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: 

With bate open VcEo' <u *' 

• With reverse bias (V BE ) of -1.5 V V CEX ($us) 

With external base-to-emitter resistance (R(JE' ^ 500 n Vcer(*us) 

•EMITTER-TO-BASE VOLTAGE V EB0 

•COLLECTOR CURRENT: IC 

Continuous 

Peak : 

•CONTINUOUS BASE CURRENT IB 

•TRANSISTOR DISSIPATION: PT 

At case temperatures up to 25°C 

At case temperatures above 25°C 

•TEMPERATURE RANGE: 

Storage & Operating (Junction) 

•PIN TEMPERATURE (During Soldering): 

At distances > 1/32 in. (0.8 mm) from case for 10 s max. . . . 

• 2N-Series types in accordance with JEDEC registration data format (JS-6, RDM). 



2N6077 


2N6078 


2N6079 


300 


275 


375 


276 


250 1 


350 


300 


275 


375 


300 


275 


375 


6 


6 


9 


7 


7 


7 


10 


10 


10 


4 


4 


4 


45 


46 
Derate linearly to 200°C 

— -65 to +200 — 


46 



230 



°C 

°C 



183 



POWER TRANSISTORS 



2N6077-2N6079 

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 25°C unless otherwise specified 



CHARACTERISTIC 
SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
V dc 


CURRENT 
A dc 


2N6077 


2N6078 


2N6079 


VCE 


V B E 


'c 


>B 


Min. 


Typ. 


Max. 


Min. 


Typ. 


Max. 


Min. 


Typ. 


Max. 


'ceo 


250 









- 


- 


2 


- 


- 


- 


- 


- 


- 


mA 


'CEV 


250 
450 


-1.5 
-1.5 






— 


— 


5 


— 


— 


0.05 


— 


— 


0.5 


mA 


(T C = 125°C) 


250 
450 


-1.5 
-1.5 






- 


- 


8 


- 


- 


0.2 


- 


— 


5 


mA 


'ebo 




-6 
-9 








— 


- 


1 


— 


— 


1 


— 


— 


1 


mA 


V CE0 (sus) 






0.2 a 




275 b 


- 


- 


250 b 


- 


- 


350 b 


- 


- 


V 


V CER (sus) 
(R BE = 50012) 






0.2 a 




300 b 


- 


- 


275 b 


- 


- 


375 b 


- 


- 


v v EB0 

(l E = 1 mA) 











6 


- 


- 


6 


- 


- 


9 


- 


- 


V 


"FE 


1 




1.2 a 




12 


28 


70 


12 


28 


70 


12 


28 


50 




V BE (sat) 






1.2' 
3 a 
4 8 
5 a 


0.2 
0.6 
0.8 
1 


- 


1.0 
1.2 


1.6 
1.9 


- 


1.0 

1.5 


1.6 
2 


- 


1.0 
1.3 


1.6 
2 


V 


V CE (sat) 






1.2 a 
3 s 
4 a 
5 a 


0.2 
0.6 
0.8 
1 


- 


0.15 
0.25 


0.5 

1 


- 


0.15 
0.8 


0.5 
3 


- 


0.15 
0.5 


0.5 
3 


V 


c obo 
(V CB =10V, f = 1MHz) 










- 


- 


150 


- 


- 


150 


- 


- 


150 


pF 


Ihfel 
(f = 1 MHz) 


10 




0.2 




1 


7 


- 


1 


7 


- 


1 


7 


- 




's/b 

(Pulse duration (non- 
repetitive) = 1 s) 


50 

■ 








0.9 


- 


- 


0.9 


- 


- 


0.9 


- 


- 


A 


E S/b 
(R B = 50n, L=100juH) 




-4 


3* 




0.45 


- 


- 


0.45 


- 


- 


0.45 


- 


- 


mj 


t d ° 






1.2 


0.2 


- 


0.02 


- 


- 


0.02 


- 


- 


0.02 


- 


Ms 


tr C 






1.2 


0.2 


- 


0.3 


0.75 


- 


0.3 


0.75 


- 


0.3 


0.75 


ts° 






1.2 


0.2 


- 


2.8 


5 


- 


2.8 


5 


- 


2.8 


5 


tf c 






1.2 


0.2 


- 


0.3 


0.75 


- 


0.3 


0.75 


- 


0.3 


0.75 


R 0JC 


20 




2.25 




- 


- 


3.9 


- 


- 


3.9 


- 


- 


3.9 


°C/W 



*2N-series types in accordance with JEDEC registration data format (JS-6, RDF-1). 

a Pulsed; pulse duration < 350 jus, Duty factor = 2%. 

b CAUTION: The sustaining voltages Vc E q(sus), ancl V CER' SUS '' MUST NOT be measured on a curve tracer. 

C V CC = 250V, l B1 = l B2 . 



184 



POWER TRANSISTORS 



2N6077-2N6079 



PULSE MIRATION 1 




>0 100 

COULCCTOR-TO-CMITTM VOLTAOC <V CE » — V 

»2C»-lt022 

Fig. 1 - Maximum operating areas for all types. 



1900 



I i 

I . 

5 

(J 

s 

go.i 





liMlMmli^ 










:li:ffi 


IH flf III 






|{t|ji ft jt|[t 


Tilr 1 il^ll^ 












|ip=S 


^B||rjK 


"frffljpnT^j^^ | ; InJofni ■ \\: HI tMla 


= lSill 






EEpHEgi 
















liiiS 










iiiTnTn 1 1 ■ 1 1 1 1 1 IliitnTtTttttttiH^^fiFTtt'l'ttttl 1 M 1 1 1 1 1 1 i M4.TWM J ll M i-^tl^^^^^m 



468 2 4 • 8 2 

10 100 

COLLtCTOH-fd-tMITTtH VOLTAOE <V ct ) — V 

I 

Fig. 4 - Maximum operating areas for all types. 



3 5 
,_ 3 

1 ° 5 




COLLECTOR -TO- EMITTER VO 

' 1 '' ! i i 


™0Elv CE |.|.0vl 

L ' 'J ! ! 


| 


96 
84 1- 
70 =>t 
56|k 

2syf 




. : | ! 










CASE TEMPERATURE 










' !'j 


f 


__ iN 




\ 






-55*C 




• i 






j 






Vj 










i II 


1 


A± 














4 


a 






2 











COLLECTOR CURRENT llr 



F/'p. 2 - Typical normalized dc beta 
characteristics for all types. 



3 5 
3 

1- 

II 2 

a 

O 0-3 


COLLECTOR -TO-E 


MITTER VOLTAGE 1 

! | 


'CE>" 




~r 






^TNl ! 








i 


75 5^ 
60 1° 
4 'oS 

30 3£ 

15 



CASE TEMPERATURE^ 
I T C ) • 2V_C_ 














— 


s s 


i 


















• ' 


1 

-55*C 




















\^-—— 






































| 























COLLECTOR CURRENT U r 



Fig. 3 - Typical normalized dc beta 
characteristics for all types. 



Note (Figs. 2 & 3): To estimate mm., max. hpg at any current and 
temperature, read normalized dc forward-current transler ratio and 
multiply by mm., max. specifications given in Electrical Character- 
istics Chart. 





COLLECTOR-TO-EMITTER VOLTAGE IVcj) ■ 5 V [[ 1 1 1 1 1 1 H 




















5 












£<Cv' 




. 'N [TTI 1 1 












J 




s> 1 1 1 II 1 mil - 


* 






^ 1 1 ! 1 1 i i 1 1 1 1 1 1 - 












W* 


fr°| - 


5 










y*\ 














-s 


it" 




















K 












' 














l/mlilfUIIH - 











0.5 




1 




i 


S 8 



BASE-TO-EMITTER VOLTAGE! 



Fig. 5 - Typical transfer characteristics 
for all types. 




Fig. 6 • Typical saturation voltage 
characteristics for all types. 



185 



POWER TRANSISTORS 



2N6077-2N6079 



6 

7 
* ' 

i 4 

• 3 
j 2 


,036 TEMPERATURE 1 T c 1 . 25* 


ch:i 


FTTT 




g|: 














"Flim 


-it 


'|HH| 




F"H: 












f--S[ 


_o» j: 


iff" 






Tr 




t+S: 








Hffff 


T f " 






iO-»: 












ASECU 


RRENJUj 


)'0-'». 






w- 


--M- 1 - 


M 




&fi 


Tf 


fttf 




Li 




til 


(Mill 











12 3 4 5 6 7 6 

COLLECTOR-TO-EMITTER VOLTAGE ( V CE 1 — V tac»-c»OH 

Fig. 7- Typical output characteristics 
for all types. 




COLLECTOR CURRENT CT C 1- 



Fig. 8 - Typical storage-time characteristics 
for all types (with constant forced 
gain). 



POLK DURATION S 20,. 

REPETITION RATE -ICO Hz 

COLLECTOR SUPPLY VOLTAGE (V ce l'250vt 

CASE TEMPERATURE (T c I ■ 2J'C 

I »|- I »Z 




Fig. 9 - Typical rise-time characteristic 
for all types. 



7 

- s 

J 4 

f 

" J 

8 

«J 2 


CASE TEMPERATURE (T c 1 ■ 129 'C | [ | | [ | | | j j ^~f~ 










iaJ 
















: so 

: 2d 










-+U+ 




Um][iX|4f|tt IaSE <»*' l i tM T|' | I |'|'| 




i? 



























COLLECTOR-TO-EMITTER VOLTAGE (VCEI— V MCS-I 

Fig. 10- Typical output characteristics 
for all types. 



4 « 

i 
* 

8 
I ! 

1 




- PULSE DURATION i 20 pi 
^REPETITION RATE- 100 Hi 
-j COLLECTOR SUPPLT VOLTAGE (V CC I'250V 
CASE TEMPERATURE 1 T c >■ 2S*C 








HnI nW 
















IrJ 1 1 ft" Tr 








o\ 1 1 | | 1 1 1 ) | j j | | 






Villi 111 1 1 H4 

k T 1 







































COLLECTOR CURRENT (I c l-A 



Fig. 1 1 - Typical storage-time characteristics 
for all types (with constant-base 
drives). 



0.12 

Oil 

\ 0.1 

1 




























I ; i i- 


REPET 












CTOR SUPPLY VOLTAGE IVccI- 250V 










CASE 










DC BETA (h FE > ■ 5 THROUGH 10 








































'e, 1 b 2 










-t-j- 






i i 1 i 


z 










































1 j i ; 


--*-+■ 
















































JJ0.07 
0.06 
0.05 










■■. — - 


-!-.--!• 


































































































































































































' 




























4 





COLLECTOR CURRENT 1 !<; I 



Fig. 12 - Typical delay-time characteristic 
for all types. 




COLLECTOR CURRENT (I c l — A 



Fig. 13 - Typical fall-time characteristic 
for all types. 



186. 



POWER TRANSISTORS 



2N6098-2N6103, RCA3055 



High-Current Silicon N-P-N VERSAWATT Transistor 

Features: 

Designed for Medium-Power Linear and Switching Service 
in Consumer, Automotive, and Industrial Applications 



These RCA types are hometaxial-base 
silicon n-p-n transistors. Types 2N6098, 
2N6100, and 2N6102 have formed emit- 
ter and base leads for easy insertion into 
TO-66 sockets. Types 2N6099, 2N6101, 
and 2N6103 are electrically identical to 
the 2N6098, 2N6100, and 2N6102, re- 
spectively. 

These new VERSAWATT package transis- 
tors differ in voltage ratings and in the 
currents at which the parameters are con- 
trolled. They are intended for a wide 



variety of medium-power switching and 
linear applications, such as series and 
shunt regulators, solenoid drivers, motor- 
speed controls, inverters, and driver and 
output stages of high-fidelity amplifiers. 

OPTIONAL LEAD CONFIGURATION 
An additional lead forming for printed- 
circuit board mounting is also available. 
Please submit requirements to your RCA 
Technical Sales Representative, or write 
to RCA Power Marketing, Somerville, 
N.J. 08876. 



MAXIMUM RATINGS, Absolute-Maximum Values: 

•COLLECTOR-TO-BASE VOLTAGE V CB0 

COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: 
With external base-to-em.tter resistance (R b e) = 10012 ... V C er(sus) 

" With base open V(;r£o(sus) 

With base reverse-biased V BE = -1.5V V CEV (susl 

•EMITTER-TO-BASE VOLTAGE V EB0 

•COLLECTOR CURRENT (Continuous) Ic 

•BASE CURRENT I B 

TRANSISTOR DISSIPATION: Pj 

• At case temperatures up to 25°C 

At ambient temperatures up to 25°C 

• At case temperatures above 25°C, derate linearly 

At ambient temperatures above 25°C, derate linearly 

•TEMPERATURE RANGE: 

Storage & Operating (Junction) 

• LEAD TEMPERATURE (During Soldering) : 

At distanced 1.8 in. (3.17 mm) from case of 10sma«. . . . 
' 2N-Series types in accordance with JEDEC registration data format JS 6 RDF-2. 



' i c MAx.(foNfiNu60"s) jr 



tfCJRMALI^ED ^OWE* i 



1 l0 f 



(ZN6l02,2N6l05T 
X c MKx.(hoNTINUOl|S): 



(2N609e |gNiBoW; 
? JlJliSIQP, 2N4I0I Jj 




case temperature ncT*zpta , isv 

<€U«VE&lMy$TiB€ 0Et^Tk^^NBARt^S 
WITH INCREASE IN TEMPERATURE) ^ 

*for sinIsle N5s«kpeTiti\?Ei pjuisc 



Vceo MAX i4DV UN6ia2,2N6IC&) : 
V Cf r MAiX»6pyl(2N6098,2N6099l- 
V CE0 MAX i 7DV i(2N6IOD,2NJ3IOI> - 



10 
COLLECTOR-TO-EMITTER VOLTAGE (V C £) — V 



92CS-I79S4 



Fig. 1 — Maximum safe operating areas for 2N6098-2N6103, inclusive. 



Low saturation voltage - 
V CE (sat) = 1 V max. at l c = 4 A 

(2N6098, 2N6099) 
= 1 V max. at l c = 5 A 

(2N6100, 2N6101) 
= 1 V max. at l c = 8 A 

(2N6102, 2N6103) 
VERSAWATT package (moided- 
silicone plastic) 

Maximum safe-area-of-operation curves 
Thermal-cycle rating curve 

TERMINAL DESIGNATIONS 



BOTTOM VIEW 




92CS-275I9 



JEDEC TO-220AB 
2N6099, 2N6101. 2N6103 



y 



(FLANGE) 
BOTTOM VIEW 



o 



3 



ioo e 






— 


JEOE 
2N6098, 


C TO-220A 
2N610O, 2 


A 
«1 


02 




* 
J. ' 

z 2 

o 

S,n- 








^"T- 
















Sa^ 


. 








K<i 








* 




^ \V 


s fo 








K i 




\-± 


>;>& 


^ 






o 

< 

0! 2 
t 








FW 


:$:t3 


*SP 


~: 








t . 


i v \ 




* 










\ 


N \\ 




Zm^ 








i 


\\ 




VK/ 


1 


\ 





o \» 

\ Y 


^o_A 


? 


\ f\ No 



Fig. 2 — Thermal-cycling rating for all types. 




MSt-TO-CWTTCIt VW.TMC tVgfl-V 

WCS-MMT 

Fig. 3 — Typical transfer characteristics for 
all types. 



.187 



POWER TRANSISTORS 



2N6098-2N6103, RCA3055 

ELECTRICAL CHARACTERISTICS, Case Temperature (T C J = 25° C Unless Otherwise Specified 



CHARACTERISTIC 
SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
V dc 


CURRENT 
Adc 


2N6102 
2N6103 


2N6098 
2N6099 


2N6100 
2N6101 


RCA3055 


V C E 


v E b 


'c 


»B 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


'CEX 


40 

65 

75 

100 


1.5 
1.5 
1.5 
1.5 






- 


2 


- 


2 


- 


2 


- 


5 


mA 


'CEX 
(T C =150°C) 


40 

65 

75 

100 


1.5 
1.5 
1.5 
1.5 






- 


10 


- 


10 


- 


10 


- 


30 


'ceo 


30 

' 50 

60 











- 


2 


: 


2 


- 


2 


- 


0.7 


mA 


'ebo 




5 
7 
8 











1 


- 


1 


- 


1 


- 


5 


mA 


V CER (sus) 
R BE -= 100fi a 






0.2 




45 


- 


65 


- 


75 


- 


70 


- 


V 


V CE0 (sus) a 






0.2 





40 


- 


60 


- 


70 


- 


60 


- 


v CEV< sus > a 




1.5 


0.1 




- 


- 


- 


- 


- 


- 


90 


- 


hFE 8 


4 
4 
4 
4 
4 




4 
5 
8 
10 
16 




15 
5 


60 


20 
5 


80 


20 
5 


80 


20 
5 


70 




Vbe 8 


4 
4 
4 




4 
5 
8 




~ 


1.7 


- 


1.7 


- 


1.7 


- 


1.8 


V 


V CE (sat) 8 






4 
10 
16 


0.4 

2 

3.2 


— 


2.5 


— 


2.5 




2.5 


- 


1.1 


V 


's/b b (t>ii) 


60 








- 


- 


- 


- 


- 


- 


1.2 


- 


A 


f hfe 


4 




1 




- 


- 


- 


- 


- 


- 


10 


- 


kHz 


h fe 


4 


f=1 kHz 


0.5 




15 


- 


15 


- 


15 


- 


15 


120 




|h fe | 


4 


f= 
Q1MHz 


0.5 




8 


28 


8 


28 


8 


28 


2 


- 




R 0JC 
R 0JA 










- 


1.67 
70 


- 


1.67 
70 


— 


1.67 
70 


— 


1.67 
70 


°C/W 



*2N-series types in accordance with JEDEC registration data format (JS-6, RDF-2) 
"Pulsed, pulse duration = 300 /is, duty factor = 0.018 



188 



POWER TRANSISTORS 



2N6098-2N6103, RCA3055 




COLLECTOR-TO-EMITTER VOLTAGE (V CE )— V 92CS . 2I466 
Fig. 4 — Maxirpum operating areas for RCA3055. 



s" 

i bo 

| 60 

3 

o « 

S 20 



COLLECTOR-TO-EMITTER VOLTAGE (Vfcf)^ 


v 
















































































































- <£ 


• G 




■■ 


4 


*•-». 






















P 


ife* 
























*$r 




> 














1< 


£* 


^ 








v 










.& 
















X 


























N 






























>. S 























































MO 

9 

| 

" 100 

1 

i " 

S *° 

S 20 



COLLECTOR-TO-EMITTER VOLTAGE <\fc E >>< 


V 










1 


^' 




■HI 




















4 


f 






1 




















P* 










' 


s 


























wV 
























W<*^ 






\\ 
















** 


*» 


2f 










k 












~£ 


■**■ 
















\ 




























\ 






























' 
































\ 
































N 
































































11' 



































COLLECTOR CURRENT (It) — A 

F/'gr. 7 — Typical dc beta characteristics 
for 2N6100and 2N6101. 



COLLECTOR CURRENT del — A 



Fig. 8 - Typical dc beta characteristics for 
2N6102and2N6103. 



CASE TEMPERATURE (T-I'25'C 




CASE 


T 
K> 


MPERATURI 


E 'Tcl'ZS'cllllllllllllllllllllllH 




< 


e 












JUiiooti 






£ 


« 














K 




[HttttJIsJIlllllllllllllHIllllllllllHlllftfll 




% 
















g 


4 


m l'°°' 1 m IrnTTT 




































H 












lllllllllllllllTltlllllllll 9tSE PWREHT (Ig) 





JO JO 40 90 «0 70 



£ 

i 
i" 2 

I " 

i 

!" 

* 04 



COLLECTOR-TO-EMITTER VOLTAGE (VfcE 
CASE TEMPERATURE (Tr)-2S'C 

1 1 1 
















U^- 


:, 






















J*&^* 


,R 


Joss 




















^ 






































































































































« 

















COLLECTOR CURRENT (Ij)— A 

Fig. 5 — Typical gain-bandwidth product for 
all types. 



2 

S ioo 
|.„ 

z 60 
V 40 

1- 

e 


CC.-ECTOR-TO-EMITTER VOLTAGE IVfcjl.4 V 
















































































































































tf» 


C | 
























_^ 












"■^ 


*•. 


















































vy^= 










J* 


!«*&* 






















~£\ 


lt> 












































> 
































































> 












































« 












6 6 










• 1 



COLLECTOR CURRENT (!<.) -A JK 

Fig. 6 — Typical dc beta characteristics for 
2N6098, 2N6099, and RCA3055. 




COLLECTOR CURRENT (!<;> — A 



MC9-I3M4 



Fig. 9 - Typical saturated switching 
characteristics for all types. 



CASE 


TEMPERATURE tT c )-23*C| 






iS 


»ooj|[|||||||[|||||||||||| 




1 


•E 


jt'^oo'-Uiimiiiiiiiiiiiiii 




X 




ilt'SJIttfftlllllllllilll 












S 




}fflffi'Mbffi|||||[|||||||| 




% 
















% 


4fl 


IIIIIIHIHIljgolllllllllK 




















1 




























SSL BASE CURRENT Ugl 


■'°»» ttiti ||[||||||||||||||||1||1||| 



Fig. 10 - Typical output characteristics for 
2N6098, 2N6099, and RCA3055. 



Fig. 1 1 - Typical output characteristics for 
2N6100and 2N6101. 



20 SO 40 



COLLECTOR-TO-EMITTER VOLTAGE (VcE>— V 

92CS- 15991 

Fig 12 - Typical output characteristics 
for 2N61 02 and 2N6103. 



189 



POWER TRANSISTORS 



2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501 

Epitaxial-Base, Silicon N-P-N andP-N-P VERSAWATT 
Transistors 



General-Purpose Medium-Power Types for Switching and Amplifier Applications 



RCA 2N6106-2N6111, 2N6288-2N6293, 
and 2N6473-2N6476, 41500 and 41501 
are epitaxial-base silicon transistors sup- 
plied in a VERSAWATT package. The 
2N6288-2N6293, 2N6473, 2N6474, and 
41500 are n-p-n complements of p-n-p 
types 2N61 06-2N61 11, 2N6475, 2N6476, 
and 41501, respectively. All these transis- 
tors are intended for a wide variety of 
medium-power switching and amplifier 
applications, such as series and shunt 
regulators and driver and output stages 
of high-fidelity amplifiers. 



The 2N6289, 2N6291, and 2N6293 n-p-n 
types and 2N6106, 2N6108, and 2N61 10 
p-n-p devices fit into TO-66 sockets. The 
remaining types are supplied in the JEDEC 
TO-220AB straight-lead version of the 
VERSAWATT package. All of these de- 
vices are also available on special order in 
a variety of lead-form configurations. 



Features: 

■ Low saturation voltages 

■ VERSAWATT package (molded 
silicone plastic) 

■ Complementary n-p-n and p-n-p types 

■ Thermal-cycling ratings 

■ Maximum safe-area-of-operation 
curves specified for dc operation 



TERMINAL DESIGNATIONS 



* 

1 

1 l0 


P T «MAX.}<40W | 


I 












^ 


'jC 


kY". 
















a 


k 














V 




\j» 














\N 




Y& 












i 


\ 


V 


\\N?" 










\ 


\ 


\ 


\\ 


vNt°- 






A§ 


r 


\ 


> 


v\X\ x 









BOTTOM VIEW 



BOTTOM VIEW 



JEDEC TO-220AA 
2N6106. 2N61M, 2N61 10 
2N6289. 2N62S1 , 2N6293 



JEDEC TO-220AB 
2N6107. 2IW109. 2N6111. 
2N62B8, 2N6290, 2N6202. 
2N6473. 2N6474, 2N6475, 
2N6476. 41 BOO. 41501 



UMBER OF THERMAL CYCLES 



Fig. 1 - Thermal-cycling ratings for 
all types. 



MAXIMUM RATINGS, Absolute-Maximum Values: P-N-P 

•COLLECTOR-TO-BASE VOLTAGE V CB0 

•COLLECTOR-TO-EMITTER VOLTAGE: 

With external base-supply resistance (RgB^ = 100£2, 

and base supply voltage (Vgg) =0V Vqex 

With base open Vqeq 

•EMITTER-TO-BASE VOLTAGE V EB0 

•COLLECTOR CURRENT (Continuous) 

At case temperature ^ 106°C \q 

•BASE CURRENT (Continuous) 

At case temperature ^130°C Ig 

TRANSISTOR DISSIPATION: P T 

At case temperatures up to 25°C 

* At case temperatures up to 100°C 

At ambient temperatures up to 25°C 

At case temperatures above 25°C 

* At case temperatures above 100°C 

At ambient temperatures above 25°C 

•TEMPERATURE RANGE: 

Storage and Operating (Junction) 

•LEAD TEMPERATURE (During Soldering): 

At distance ^ 1/8 in. (3.1 7 mm) from case for 10 s max. 



2N6288 


2N6290 


2N6292 










2N6289 


2N6291 


2N6293 


2N6473 


2N6474 


41500 




2N6110* 


2N6108* 


2N6106* 


2N64754 


2N6476* 


41501* 




2N6111* 


2N6109* 


2N6107* 










40 


60 


80 


110 


130 


35 


V 


40 


60 


80 


110 


130 


35 


V 


30 


50 


70 


100 


120 


25 


V 


5 


5 


5 


5 


5 


3 


V 



40 


40 


40 40 


40 


40 


W 


16 


16 


16 16 


16 


16 


W 


1.8 


1.8 


1 .8 1 .8 
Derate linearly at 0.32 W/°C 
Derate lineraly at 0.32 W/°C 
Derate linearly at 0.0144 W/°C 


1.8 


1.8 


W 



-65 to 150 



235 



* 2N-Series types in accordance with JEDEC registration data format (JS-6, RDF-2) 4For p-n-p devices, voltage and current values are negative 



190 



POWER TRANSISTORS 



2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501 

ELECTRICAL CHARACTERISTICS, At Case Temperature (T c ) = 25°C Unless Otherwise Specified 



CHARACTERISTIC 


TEST CONDITIONS* 


LIMITS 


UNITS 


VOLTAGE 
V dc 


CURRENT 
A dc 


2N6292 
2N6293 
2N6106+ 
2N6107* 


2N6290 
2N6291 
2N6108* 
2N6109+ 


V C E 


v B e 


»C 


'B 


MIN. 


MAX. 


MIN. 


MAX. 


'CER 

(B BE = iocm) 


75 
55 








- 


0.1 


_ 


0.1 


mA 


(T C = 150°C) 


70 
50 








_ 


2 


- 


2 


'CEX 


75 
56 


-1.5 
-1.5 






- 


0.1 


_ 


0.1 


mA 


(T C =150°C) 


70 
50 


-1.5 
-1.5 






_ 


2 


— 


2 


•CEO 


40 
60 










_ 


1 


- 


1 


mA 


'ebo 




-5 







- 


1 


- 


1 


mA 


V CE0 (sus) 






0.1" 





70 


- 


50 


- 


V 


V CER (sus) 
(R BE = 10012) 






0.1 




80 


- 


60 


- 


V 


"FE 


4 
4 
4 




2 a 

2.5" 
7 a 




30 
2.3 


150 


30 
2.3 


150 




V BE 2N6292, 2N6293 

2N6290, 2N6291 

All Types 


4 
4 
4 




2 a 

2.5" 
7 s 




- 


1.5 
3 


- 


1.5 
3 


V 


V CE (sat) 






2" 

2.5" 

7 a 


0.2 

0.25 

3 a 


- 


1 
3.5 


- 


1 
3.5 


V 


h fe 
(f = 50kHz) 


4 




0.5 




20 


- 


20 


- 




*T 

2N6290 - 2N62&3 

2N6106-2N6109 


4 
-4 




0.5 
-0.5 




4 
10 


- 


4 
10 


- 


MHz 


IN 

(f = 1 MHz) 

2N6290 - 2N6293 
2N6106-2N6109 


4 
-4 




0.5 
-0.5 




4 
10 


- 


4 
10 


- 




C bo 
(f =1 MHz, V CB = 10V) 











- 


250 


- 


250 


pF 


R 0JC 










- 


3.125 


- 


3.125 


°C/W 


R 0JA 










- 


70 


- 


70 



"Pulsed; pulse duration = 300 n$, duty factor = 0.018. *For p-n-p devices, voltage and current values are negative 

*ln accordance with JEDEC registration data format (JS-6 RDF-2). 
CAUTION: The sustaining voltages Vq E q(sus) and Vq E r(sus) MUST NOT be measured on a curve tracer. 



191 



POWER TRANSISTORS 



2N6106-2N6111, 2N6288-2N6293, 2N6473- 2N6476, 41500, 41501 

ELECTRICAL CHARACTERISTICS, At Case Temperature (T c ) = 25°C Unless Otherwise Specified 



CHARACTERISTIC 


TEST CONDITIONS* 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
A dc 


2N6474 
2N6476* 


2N6473 
2N6475* 


41500 
41501* 


V C E 


VBE 


'c 


>B 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


'CER 

<r be = ioon) 


30 
120 
100 








- 


0.1 


— 


0.1 


— 


0.25 


mA 


(T c = 100°C) 


120 
100 








_ 


2 


_ 


2 


_ 


— 


'CEX 


120 
100 


-1.5 
-1.5 






- 


0.1 


_ 


0.1 


_ 


- 


mA 


(T c = 100°C) 


120 
100 


-1.5 
-1.5 






_ 


2 


_ 


2 


_ 


_ 


'CEO 


60 
50 










- 


1 


_ 


1 


— 


_ 


mA 


'ebo 




-5 
-3 








- 


1 


: 


1 


- 


1 


mA 


V CE0 (sus) 






0.1 a 





120 


- 


100 


- 


25 


- 


V 


V CER (sus) 

(R BE = ioon) 






0.1 




130 


- 


110 


- 


35 


- 


V 


hFE 


4 

4 

2.5 




1 a 

1.5 a 
4 a 




15 
2 


150 


15 
2 


150 


25 


- 




V B E 


4 

4 

2.5 




1 a 

1.5 a 

4 a 




- 


2 
3.5 


- 


2 
3.5 


- 


1.5 


V 


V CE (sat) 






1 a 

1.5 a 

4 a 


0.1 

0.15 

2 


- 


1.2 
2.5 


- 


1.2 
2.5 


- 


1 


V 


h fe 
(f = 50 kHz) 


4 




0.5 




20 


- 


20 


- 


20 


- 




f T 
41500, 2N6473, 2N6474 
2N6475,2N6476 


4 
-4 




0.5 
-0.5 




4 
5 


- 


4 
5 


- 


4 


- 


MHz 


I hfe I 
(f = 1 MHz) 
41500, 2N6473,2N6474 
2N6475,2N6476 


4 
-4 




0.5 
-05 




4 
5 


- 


4 
5 


- 


4 


- 




^obo 
(f=1 MHz, V CB = 10V) 











- 


250 




250 


- 


250 


pF 


R 0JC 










- 


3.125 




3.125 


- 


3.125 


°C/W 


R 0JA 










- 


70 


- 


70 


- 


70 



'Pulsed; pulse duration = 300ms, duty factor = 0.018. *For p-n-p devices, voltage and current values are negative. 

*2N-series types in accordance with JEDEC registration data format (JS-6 RDF-2). 
CAUTION: The sustaining voltage Vceo^ sus ^ anc ' VcER( sus ) ^""^ NOT be measured on a curve tracer. 



192 



POWER TRANSISTORS 



2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41560, 41501 



ELECTRICAL CHARACTERISTICS. At Case Temperature IT C ) 


- 2?C Unless Otherwise Specified 








CHARACTERISTIC 




TEST CONDITIONS* 


LIMITS 


UNITS 


SYMBOL 


VOLTAGE 
Vdc 


CURRENT 
Ark 


2N6288 
2N6289 


2N6110* 
2N6111* 


V CE V BE 


'C 


>B 


MIN. 


max: 


MIN. 


MAX. 


Collector-Cutoff Current: 

With external base-to-emitter 
resistance (RfjE' = 100 H 


'CER 


35 








_ 


0.1 


•_ 


-0.1 


mA 


With(R BE ) = 100 Hand 
T C = 150°C 


30 








- 


2 


- 


-2 


With base-emitter junction 
reverse-biased 


'CEX 


37.5 


-1.5 






_ 


0.1 


_ 


-0.1 


mA 


With base-emitter junction 
reverse-biased and 
T c = 150°C 


30 


-1.5 








2 




-2 


With base open 


'CEO 


20 









- 


1 


- 


-1 


mA 


Emitter-Cutoff Current 


'EBO 




5 







- 


1 


- 


-1 


mA 


Collector-to-Emitter 

Sustaining Voltage: 

With base open 


V CE0 (sus) 






0.1" 





30 


. 


-30 


_ 


V 


With external base-to 

emitter resistance 

(R BE ) = 100n 


V CER (sus) 






0.1 




40 


- 


-40 


- 


V 


DC Forward Current 
Transfer Ratio 


"FE 


4 
4 




3» 
7" 




30 
2.3 


150 


30 
2.3 


150 




Base-to-Emitter Voltage: 

2N6288, 2N6289 
All Types 


V B E 


4 
4 




3» 
7 a 




- 


1.5 
3 


- 


3 


V 


Collector-to-Emitter 
Saturation Voltage 


V CE (satl 






3" 

7« 


0.3 
3 


_ 


. 1 
'3.5 


_ 


-1 
-3.5 


V 


Common-Emitter, Small- 
Signal, Forward-Current 
Transfer Ratio: 
f = 50 kHz 


hfe 


4 




0.5 




20 




20 






Gain-Bandwidth Product: 

2N6288-2N6289 
2N6110-2N6111 


'T 


4 
-4 




0.5 
-0.5 




4 


- 


10 


- 


MHz 


Magnitude of Common- 
Emitter, Small-Signal, Forward- 
Current Transfer Ratio: 
f ■= 1 MHz 

2N6288-2N6289 
2N6110-2N6111 


|"fe| 


4 
-4 




0.5 
-0.5 




4 


- 


4 
10 


- 




' Collector-to-Base Capacitance: 
f = 1MHz, V CB = 10V 


c obo 











- 


250 


- 


250 


pF 


Thermal Resistance: 
Junction-to-Case 


R 9JC 










- 


3.125 


- 


3.125 


°C/W 


Junction-to- Ambient 


R 9JA 










~ 


70 


_ 


70 



■Pulsed: Pulse duration - 300 lis, duty factor - 0.018. 
*ln accordance with JEOEC registration data format (JS-6 RDF-2). 
CAUTION: The sustaining voltage V CER (sus) MUST NOT be measured on a c 



*For p-n-p devices, voltage and current values are negative. 



I 20 


COLLECTOR-TO-EMITTER VOLTAOEIVcEl— 4 V 
- CASE TEMPERATURE IT C )-29*C 


















J* 


^*3 












§ 

S 12 

* 

s 

< 
i 8 

4 














'■ > 






















p 






% 






































1 


4 






















s • 



COLLECTOR CURRENT (I c l-A ma-vm 

Fig. 2 - Typical gain-bandwidth product for 
2N6106-2N61 1 1, 2N6475, 2N6476, 
and 41501. 



B 
2 7 

" 5 

l 4 

i 5 


- 




































































- 






















COLLECTOR-TO-EMiTTER VOLTME ( VCE > 
CASE TEMPERATURE (T c )-25 # C 


--4 































COLLECTOR CURRENT IT C ) — A 



Fig. 3 - Typical gain- bandwidth product for 
2N6473 and 2N6474. 



| -0 
^ 8 

Is 

* 4 

I 2 




COLLECTOR-TO-EMITTER VOLTAGE [Vc£) = 4v 
CASE TEMPERATURE (T C )'25*C 












































































































l 













COLLECTOR CURRENT Hc»-v 



Fig. 4 - Typical gain-bandwidth product for 
2N6288-2N6293, and 4 1500. 




. -0.5 -I -1.5 -2 

BASE-TO-EMITTER VOLTAGE (V BE ) —V 

9ECS-ISOI6 

Fig. 5 - Typical transfer characteristics for 
2N6106-2N6111. 























I . 
i 4 

1 

° 3 

a 2 

i 

i 






u 




1 1 1 1 1 I 1 1 1 1 1 1 1 I 1 1 1 1 1 I I M &.- 




11 111 11 II 111111 1 [111 -TO 








if 1 HI 1 1 1 1 1 1 1 IT-" 


-LU-Ui 




jiff 











BASE-TO-EMITTER VOLTAGE < V e E I —V 

Fig. 6 - Typical transfer characteristics for 
2N6473 and 2N6474. 



-6 




























COLLECTOR-TO-EMITTER VOLTAGE lV CE >'-4 V L^L|. 






















































++Wt+ 










I) -5 
























































-«fryTI M>1 










-3 

UJ _ 2 

-1 




























































4 


























































































"m 














































1/11 i/ffi 

















































































































BASE -TO -EMITTER VOLTAGEtVgg) — V 

Fig. 7 - Typical transfer characteristics for 
2N6475 and 2N6476. 



193 



POWER TRANSISTORS 



2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501 




|6 8 
-5.7 
COLLECTOR-TO-EMITTER VOLTAGE (VCE) — V 

92CS-27700 

Fig. 8 - Maximum operating areas for 2N6106-2N61 1 1 and 41 501. 



i > 
S! ioc- 


COLL 
































■' 
































II 1 


















































25»C """' 




s' ? 
























































































































































































































































































5 






















•* 



COLLECTOR CURRENT (I c ) — A 

Fig. 9 - Typical dc beta characteristics for 
2N6473 and 2N6474. 



s 

I 400 

g 200 

►: ioo 
B so 

| 60 

o 
g 40 

£ 20 
10 
























VOLTAGE (Vce) "-«V 




















| III 






















"CASE TEMPERATURI 


lii^e 








































2»'C 


























































-40'C 
















































































































4 


• 














4 







Fig. 10 ■ Typical dc beta characteristics for 
2N6106-2N61 1 1. 




6 8 I 2 4 6 8 

-10 -IOO 

COLLECTOR-TO-EMITTER VOLTAGE (V CE )-V 92C s-22527 

Fig. 1 1 - Maximum operating areas for 2N6475—2N6476. 



f ; 


COLLECTOR 


-TO 


EMITTER VOLTAGE 


VrF 


■ 4V- 











| 




















'K., 


























<t''*> 












2J 


c 


hJ 


























































< 
| l0 














































































































v • 
* 
i * 


































































































































































t 











COLLECTOR CURRENT (I c l— A 

92CS-22539 

Fig. 12 • Typical dc beta characteristics for 
2N6475 and 2N6476. 



1,1000, 

•*■ 5 
9 4 

i ' 

i ,o °. 

* 2 

§ ,0 

i : 

8 i 




























































































CASE TEMPERATURE (Tel* 12 


5'C 






































>. 


























2S*C 


hi 




»• 






























' 


V 






























^ 






























N 


\ 






























































































































































-0 


01 








C 


.1 








- 










-10 



COLLECTOR CURRENT ll c l —A 

92CS-23930 

Fig. 13- typical dc beta characteristics for 
41501. 



194 



POWER TRANSISTORS 



2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501 




2530 40 50 70 I00 
COLLECTOR-TO-EMITTER VOLTAGE <VcE> — V 



Fig. 14 - Maximum operating areas for 2N6288-2N6293 and 4 1500. 



JfUoo 

1 

3 200 

i ioo 

« 80 
i- «0 
S 
c *° 

| 20 
« l0 

a a 

6 


COLLECTOR- TO-EMITTER VOLTAGE (V(; E I ■ 4 V 








MUM 

CASE TEMPERATURE IV)- I29'C 
























hS!£ 






















































-40'C 







































































































































COLLECTOR CURRENT (I c )-A 

Fig. 15 - Typical dc beta characteristics for 
2N6288-2N6293, and 41500. 



IOb 






1 1 III 

I c MAX (CONTINUOUS) 


— CASE TEMPERATURE (T r )«IO0"C- 




|N 




























f" 






S?r 




















% ' 






































*& 


















i 








Xjk. 


















i 












■i 
















i 












j 1 


&. 










0.01 


















'■ "«. 


































































V C EO M 




















i 






1 II 1 1 


1 













































COLLECTOR-TO-EMITTER VOLTAGE (V ce )- V 




Fig. 16 • Maximum operating areas for 
2N6473-2N6474. 



1 J* 
35 50 100 

COLLECTOR-TO-EMITTER VOLTAGE (V CE )-V 



Fig. 17 ■ Maximum operating areas for 2N6473 and 2N6474. 



-108 






1 III 

I c MAX. (CONTINUOUS) 


_CASE TEMPE 

j , 




tE(T c )-IOO*C 


























r 


sfd ; i 








1 






























S^W ' 
























& 
















1 


ui 


=H 






. X* 












-0-01 










1 


V 


>. 














^ 






^ 








































MAX.. 120 V 12N6476>-a 
MAX « 100V (2N6475)- 


f. 














VCEO 
















i Ml 1 1 1! 




















« 








1 




-i» 











COLLECTOR-TO-EMITTER VOLTAGE IV CE )-V 

^ 92c 

Fig. 18 - Maximum operating areas for 
2N6475 and 2N6476. 



I0 


I c MAX. (CONTIN 


OUS) 


_CASE TEMPE 


RATUREI 


C> 


IO0 # C 
















































V 
































0.1 




























































2N6288 a 

*CEO MAX.. 
2 N 6290 8 2 
V CE0 MAX . 








V* 






N6289) 1 
OV 












N829I) _ 














70 V 














(2N6292 8 2 


N6293) 










j 























5 


> 







COLLECTOR-TO-EMITTER VOLTAGE (V CE )-V 



Fig. 19 - Maximum operating areas for 
2N6288-2N6293. 



195 



POWER TRANSISTORS 



2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476, 41500, 41501 




0.2 04 0« as I I 2 14 16 

SASE-TO-EMITTER VOLTAGE (Vg E I —V 



Fig. 20 • Typical transfer characteristics for 
2N6288-2N6293, and 41500. 






COLLECTOR -TO -EMITTER VOLTAGE (V CE )'-4V . | | | ] - 


I -250 




mm 


































































~-200 
1-IJO 




Tr "* r 

if t- r 

TT Or f ■ 

v n- 


































































































-50 




t^Jh 





































































































































Fig. 21 - Typical transfer characteristics for 
41501. 



Fig. 22 - Typical input characteristics for 
2N6106-2N61 1 1. 2N6475, and 
2N6476. 



300 

t 290 


COLLECTOR -TO -EMITTER VOLTAGE IV CC )>4V I I I I I I I I Hj - 




iiw 








±?f 


■n u ll 111111111m 1 1 1 < 1 1 1 1 1 1 


^ti ? ll 1111 1111 111 111 11 11 II 


-200 




SI 

■IE 




S ioo 




3 ft 




50 


















BASE-TO- EMITTER VOLTAGE (V BE )-V 




300 

l 150 
3 100 

so 


COLLECTOR-TO-EMITTER VOLTAGE IV fE IJ»v| | | j | | | | j |j~" 
















; -SI^I 


18 [| 1 1| 1 1 1 1 [ 1 1 1 1 J 1 1 1 1 1 : 










* ll ff 






















BASE-TO- EMITTER VOLTAGE (V 0E >- 



Fig 23 - Typical input characteristics for 
2N6473 and 2N6474. 



Fig. 24 - Typical input characteristics for 
41501. 



Fig. 25 - Typical input characteristics for 
2N6288-2N6293. 




4 $ t 10 12 14 It 

COLLECTOR -TO-EMITTER VOLTAGE <V CE ) V 

KCS-IM73RI 

Fig. 26 - Typical output characteristics for 
2N6288-2N6293, and 41500. 



-6 

o -5 

5-4 
| 

i" 3 

j -2 

o 


















































1 1 1 I | 1 I 1 1 1 1 I I8ASE CURRENTtI B )--200mA|- 












-jOOnS 










-50i»a|- 


±4o'w'+; 














j 


Oi 


A- 

A^ 



















-2 -4 -6 -6 -K> -12 -14 -16 

COLLECTOR-TO-EMITTER VOLTAGE IV CE ) — V 

92CS-I90I5RI 

Fig. 27 - Typical output characteristics for 
2N6106-2N6111. 




2 4 6 8 10 12 14 

COLLECTOR-TO-EMITTER VOLTAGE (V CE 1- 



Fig. 28 - Typical output characteristics for 
2N6473 and 2N6474 




HO -12 
COLLECTOR-TO-EMITTER VOLTAGE IVCE'" 



-3.5 

-1 J 


CASE TEMP 


ERATL 


RE(T C ..29-C ttttiifj! i. 


lj!i; 


< *1 
I 


j 




TTs 


ASECU 






fftrrrl 

200 mA t 






V 










ill 


Ul- 150mA ' ' 


! lii: 










!S 


t 


I! 


fiiitJjl :i 


nil 


S I 






■jffl 


I ji[ 






tttfTTnTTT 

t; -20mA._U- 


• 


8 

-0.5 






¥r\ 




1: 


[i 


j-jj -10 mA -i- 


)i: : 


t 


■Im 


Wt 










-5 mA- '■ t 

11111 1 


||!! 


lili 


W 


-\_ 




TF 





-B -10 -12 -14 



COLLECTOR-TO-EMITTER VOLTAGE I 



Fig. 29 - Typical output characteristics for 
2N6475 and 2N6476. 



Fig. 30 • Typical output characteristics for 
41501. 



196 



POWER TRANSISTORS 



High-Voltage, Medium-Power Silicon 
P-N-P Transistors 



For Switching and Amplifier Applications 

In Military, Industrial, and Commercial Equipment 



2N6211-2N6214 



'CEO" 



Features: 

■ High voltage ratings 
-,(«!«) - -400 V max. (2N6214) 

-350 V max. (2N6213) 

- -300 V max. (2N6212I 

- -225 V max.(2N6211) 

■ Large safe-operating area 

■ Complements to 2N3585 transistor family 

■ Thermal-cycling rating 



RCA types 2N6211, 2N6212. 2N6213, and 2N6214* are 
epitaxial silicon p-n-p transistors with high breakdown-voltage 
ratings and fast switching speeds. They are supplied in the 
popular JEDEC TO-66 package; they differ in breakdown- 
voltage ratings and leakage-current values. 

* Formerly RCA Dev Nos. TA7719. TA7410. TA8330, and TA8331, 
respectively. 



Applications: 

■ Power-Switching Circuits 

■ Switching Regulators 

■ Converters 

■ Inverters 

■ High- Fidelity Amplifiers 



'CBO 



MAXIMUM RATINGS, Absolute-Maximum Values: 

•COLLECTOR-TO-BASE VOLTAGE V c 

COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: 

With base open v CEo' sus ' 

With external base-to-emitter resistance (Roc) = 50 JJ Vrcp,(susl 

With base-emitter junction reverse-biased (Vgp = 1.5 V) ^CEx' sus ' 



2N6211 2N6212 2N6213 2N6214 



*EMITTER-T0-BASE VOLTAGE V 



EBO 



"COLLECTOR CURRENT (Continuous) I c 

'BASE CURRENT (Continuous) I B 

TRANSISTOR DISSIPATION: P T 

* At case temperatures up to 100°C and V CE up to 50 V 

At case temperatures up to 25°C and Vq E up to 40 V 

At case temperatures up to 25°C and V^g above 40 V 

At case temperatures above 25°C 

•TEMPERATURE RANGE: 

Storage & Operating (Junction) 

•LEAD TEMPERATURE (During Soldering): 

At distance > 1/32 in. (0.8 mm) fro m case for 10s max 

•In accordance with JEDEC registration data format (JS-6 RDF-11 



-225 


-300 


-350 


-400 


V 


-250 


-325 


-375 


-425 


V 


-275 


-350 


-400 


-450 


V 


-6 


-6 


-6 


-6 


V 


-2 


-2 


-2 


-2 


A 


-1 


-1 


-1 


-1 


A 


20 


20 


20 


20 


W 


35 


35 
See Fig 


35 
1 


35 


W 


Derate linearly to 200°C 

-65 to 200 *■ 


°C 




-10 " -100 

COLLECTOR-TO-EMITTER VOLTAGE (Vcf> — V 

Fig. 1 - Maximum operating areas for all types. 



-1000 



TERMINAL DESIGNATIONS 












































* 
1 

I 




j MAX.* 200" 

1 1 


c 


































5 "-■ 


\ 




v* 


<5| 


















k 








sH 
















AN 








^^ 












I 




\ 


\% 






A 


,/» 


V*>. 


c 










Yt I 


\ 














• 


10 








"l 


I 








■iooo 


I 



NUMBER OF THERMAL CYCLES (THOUSANDS! 



MC» -l»2lt 



Fig. 2 - Thermal-cycling rating chart for 
all types. 



O 2 

S 


COLLECTOR 


-T(l 


-EMITTER VOLTASE (VceI'-SV 








l l l ll l l 












CASE TEMPERATURE (T C )- ISO "C 




















| 




N 








Tf 


•25»e 






\ 
























*J 










1 » 

8 " 


















V 
























\\ 
























\l 
























1 


























1 












- 








- 






1 


-rl 



COLLECTOR CURRENT del— A 



Fig. 3 - Typical dc beta characteristic 
for all types. 



tzes- itziom 



197 



POWER TRANSISTORS 



2N6211-2N6214 

ELECTRICAL CHARACTERISTICS, At Case Temperature (T C ) * 25°C Unless Otherwise Specified 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 






Voltage 
Vdc 


Current 
Ade 


2N6211 


2N6212 


2N6213 


2N6214 


UNITS 




V CE 


V BE 


'c 


'b 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 






Collector-Cutoff Current: 
With base open 


'ceo 


-150 









_ 


-5 


_ 


-5 


_ 


-5 


_ 


-5 






With base-emitter junc- 
tion reverse-biased 


*CEV 


-250 
-315 
-360 
-410 


1.5 
1.5 
1.5 
1.5 






- 


-05 


- 


-05 


- 


-05 


- 


-1 


mA 




With base emitter junc- 
tion reverse biased and 
T c = 100°C 


-250 
-315 
-360 
-410 


1.6 
15 
1.5 

1.5 






5 


-5 


5 


-5~ 


1 


-5~ 


5 


-10 




Emitter-Cutoff Current 


'ebo 




6 







- 


1 


- 


-05 


- 


-05 




-0 5 


mA 




DC Forward-Current 
Transfer Ratio 


h FE 


-28 
-32 
-4 
-5 




-1» 
-1" 
-1 a 
-1 a 




10 


100 


10 


100 


10 


100 


10 


100 






Collector to ■ E miner 
Sustaining Voltage 
With base open 


V CE0 (sus) 






-0.2* 





-225 




300 




-350 


- 


-400 




V 




With external base to 
emitter resistance 
(R BE ) - 50 il 


V CER (susl 






-0.2» 




250 




-325 




375 


- 


-425 






With base emitter junc 
tion reverse biased and 
external base to emitter 
resistance (Rg E l 50 <> 


V CEX <susl 




1 5 


-0.2» 




275 




350 




400 




-450 






Emitter lo Base Voltage 


V EB0 








5 mA 

1 mA 


6 




6 




-6 




^6 


_ 


V 




Emitter to Base Satura 
tion Voltage 


V BE (sat) 






-1« 


125 




1 4 




1 4 




-1.4 




-14 


V 




Collector to Emitter 
Saturation Voltage 


V CE (sat) 






-ia 


125 




1 4 




16 


- 


2 




-25 


V 




Output Capacitance 
(f 1 MHz) 


C obo 


10 
,V CB» 










220 




220 


- 


220 




220 


pF 




Second Breakdown 
, Collector Current 
(Base forward-biased) 


's/b 


-40 








0875 




-0875 




-0875 


- 


-0875 


- 


A 




Magnitude of Common 
Emitter. Small Signal. 
Short Circuit. Forward 
Current Transfer Ratio 
(f = 5 MHz) 


Kl 


-10 




-0.2 




4 


- 


4 


- 


4 


- 


4 


- 






Saturated Switching Times: 
Rise time 


'r 


-200 V 




-1 


•Bi&'B2 
-0 126 




06 


- 


06 


- 


06 


- 


06 


us 




Storage time 


«S 


V CC = 
-200 V 




-1 


•Bi&'B2 
-0.125 


- 


25 


- 


2.5 


- 


25 


- 


2 5 




Fall time 


«f 


V CC = 
-200 V 




-1 


lB,*'B2 
-0 125 


- 


0.6 


- 


06 


- 


0.6 


- 


0.6 




Thermal Resistance 
| (Junction to case) | 


B fJJC 


-10 




-1 




- 


5 


- 


5 




5 


- 


5 


°C/W 





In accordance with JEDEC registration data format JS-6 RDF-1. 
Pulied. pulse duration = 300 fl s; duty factor < 2%. 



198 



POWER TRANSISTORS 



2N6211-2N6214 



-|6, 










































* 


1 1 Ml 
















Ic MAX. (CONTINUOUS) 
















J. * 












^ 






















































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u 














>' 














1 * 
















% 




























1% 
























































w. 








-aoi 






























«C£ 


MAX.-225V<2NS2III- 














«CE 


MAX.— 350 V (2N62I3) - 




A 










VCEO MAX.-4PO V (2NG2I4) j 




















1 1 II 1 II 




III 


















' 


2 


* 


« s 








* ,?wi 



a 

i 35 


COLLECTOR-TO-EMITTER VOLTAGE (Vce)"" 1 ^ 
CASE TEMPERATURE (T C ).29'C 


































































1 " 

1 " 
















































\ 




























\ 




























\ 




























\ 




























1 




























» • 










1 ' 



-5 

1 

L- 

i.^ . 
fg 

J -1 


CASE TEMPERATURE (T C 


■29 


■c 


I 




S= 






-n- 




























11 










V 
it 


M 






=H: 


£S3 






§? 


iS 




H 






— 


r£ 




H 


1 




M 










it? 














H 


~ 





























COLLECTOR CURRENT (Ic 1— A 



-0.5 -I -1.5 -2 

COLLECTOR CURRENT (I c ) —A 



92CS- 19236 



Fig. 4 - Maximum operating areas for 
all types. 



Fig. 5 - Typical gain-bandwidth product 
for all types. 



Fig. 6 - Typical saturation-voltage 
characteristics for all types. 



PULSE DURATION »20^1 
REPETITION RATE • 200 PULSES /• 
COLLECTOR SUPPLY VOLTAGE IV CC >' "200 V 
I Bl -lBj-I c /«- 0.123 1c 
CASE TEMPERATURE IT C W5' C 




COLLECTOR CURRENT (Ic>- 



t2CS-l»23TRt 



Fig. 7 • Typical storage-time characteristic 
for all types. 



1 
* 

p 0.4 

i 

8 03 

I 02 
S 

| 0.1 




~~\ 




=H 


PULSE DURATION 


>20,.« 






=:: 


~:i 




~:~ 


COLLECTOR SUPPLY VOLTAGE (V<; C I'-200V 




;; 


':':': 


is 


CASE TEMPERATURE IT C )'25 , C 








:::: 


~~H 
























™ 


:::: 


:::: 


~i 






~ 












;;-.« 






h 


M 




vX: 


: .H 














i^«>. 














!!::*&* 




- 


:::: 












".':': 


















:::. 


*\ 


5yv^: 


:u: 














"::•• 




I* 






















►/!> 












•;=? 


-■:. 


:::: 


:*^ 








: : ni 












ij-i? 






: ..- 




S 


0:: 


-~ 














tr=- 


:rr: 































COLLECTOR CURRENT <I C >— A 



Fig. 8 - Typical turn-on time and fall- 
time characteristics for all 
types. 



T 

u "2 

!-■• 

-0.9 


COLLECTOR-TO-EMITTER VOLTAGE (V CE 1"-5V 1 1 |i|[ 1 1|||| 




























f|| 








^M 












1 1 1 1 1 1 1 ' <f fffffff 
lllllPi?JTIltTTT 











Fig. 9 - Typical transfer characteristics 
for all types. 



199 



POWER TRANSISTORS 



2N6246, 2N6247, 2N6248, 2N6469, 2N6470, 2N6471, 2N6472 

Silicon N-P-N and P-N-P Epitaxial-Base High-Power 
Transistors 



General-Purpose Types for Switching and Linear-Amplifier Applications 



RCA-2N6246, 2N6247, 2N6248, ar.J 2N6469* *« epitaxial- 
base silicon p-n-p transistors featuring high gain at high cur- 
rent. RCA-2N6470, 2N6471, and 2N6472* are epitaxial-base 
silicon n-p-n transistors. They may be used as complements to 
the 2N6469, 2N6246, and 2N6247, respectively. All of these 
devices have a dissipation capability of 125 watts at case 
temperatures up to 25°C. They differ in voltage ratings 



and in the currents at which the parameters are controlled. 
All are supplied in the JEDEC TO-3 package. 



*■ Formerly RCA Dev. Nos. TA7281 , TA7280, TA7279, and TA8724, 
respectively. 

* Formerly RCA Dev. Nos. TA8726. TA8443. and TA8442. re- 
spectively. 



Features: 

■ High dissipation capability: 125Wat2S°C 

■ Low saturation voltages 

■ Maximum safe-area-of-operation curves 

■ Hermetically sealed JEDEC TO-3 package 

■ High gain at high current 

■ Thermal-cycling rating curve 

TERMINAL DESIGNATIONS 



Maximum Ratings, Absolute-Maximum Values: 



2N6470 2N6471 2N6472 



•COLLECTOR-TO-BASE VOLTAGE V C BO 

COLLECTOR-TO-EMITTER VOLTAGE. 

* With external base-to-emitter 

resistance (Rbe) - 100 S2 VcER 

With base open Vceq 

•EMITTER TO BASE VOLTAGE VebO 

•CONTINUOUS COLLECTOR CURRENT I c 

•CONTINUOUS BASE CURRENT I B 

'TRANSISTOR DISSIPATION: p T 

At case temperatures up to 25°C 

At case temperatures above 25°C 

•TEMPERATURE RANGE; 

Storage & Operating (Junction). 

•PIN TEMPERATURE (During Soldering): 

At distances > 1/32" (0.8 mml from 
seating plane for 10 s max 

* In accordance with JEDEC registration data format (JS-6 RDF-21. 

* For p-n-p devices, voltage and current values are negative. 



2N6469* 2N62464 2N6247* 2N6248* 

50 70 90 110 



110 
100 



125 



125 



Derate linearly 200 C - 



CASE TEMPERATURE (Tc)'25 # C 
(CURVES MUST BE DERATED LINEARLY 
WITH INCREASE IN TEMPERATURE) 

2N6i46-r,iteia!tntoHEEft pulse operation 

2N6469 -70-1-2 



Tc MAX. coNTINUol 





2 4 6 e , 2 40 60 80 100 
COLLECTOR-TO-EMITTER VOLTAGE (VCE> v 



92CS-22379 



Fig. 3 - Maximum operating areas for all types. * 



*For p-n-p devices, voltage and current values are negative. 




100 

* . 

i 

Z 4 
< 

9 
10 


















































^& 










3 




yfe. 


















\\ 




^ 


v 

F 


a/^-j 


1 \ 
\ 










% 


\? 


A, 





NUMBER OF THERMAL CYCLES (IN THOUSANDS! 92cs . l95 

Fig. 1 - Thermal-cycling rating chart 
for all types. 




COLLECTOR CURRENT (Ic)— A 

Fig. 2 - Typical collector-to-emitter 
saturation-voltage character- 
istics for 2N6246, 2N6247, 
2N6248, and2N6469. 




-0 5 
BASE-TO-EMITTER VOLTAGE <V BE >- 



Fig. 4 - Typical transfer characteristics for 
2N6246, 2N6247, 2N6248, and 
2N6469. 



200 



POWER TRANSISTORS 



2N6246, 2N6247, 2N6248, 2N6469, 2N6470, 2N6471, 2N6472 



ELECTRICAL CHARACTERISTICS FOR N-P-N TYPES, At case temperature (T c ) = 25°C unless otherwise specified 



CHARACTERISTIC 


SYMBOL 


test 

CONDITIONS 


LIMITS 


UNITS 




VOLT- 
AGE 
Vdc 


CUR- 
RENT 
Adc 


2N6470 


2N6471 


2N6472 




V CE 


'c 


<B 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 




Collector-Cutoff Current: 
With external base-emitter 
resistance (R BE ) = 100 fi 


'CER 


35 
55 
75 






- 


500 


- 


500 


- 


500 


JuA 




With base-emitter 
junction reverse-biased 
V BE = -1.5V 


'CEX 


45 
65 
85 






- 


500 


- 


500 


- 


500 


MA 




With reverse bias, 
V BE = -1.5 V, and 
T c = 150°C 


40 
60 
80 






- 


5 


- 


5 


- 


5 


mA 




With base open 


'CEO 


20 
30 
40 









- 


1 


- 


1 


- 


1 


mA 




Emitter-Cutoff Current: 
V BE = -5V 


'ebo 









_ 


1 


- 


1 


- 


1 


mA 




DC Forward-Current 
Transfer Ratio 


h FE 


4 
4 


5 a 

15 a 




20 

5 


150 


20 
5 


150 


20 
5 


150 






Collector-to-Emitter 
Sustaining Voltage: 
With base open 


V CE0 (sus) 




0.2 





40 b 


- 


60 b 


- 


80 b 


- 


V 




With external base-emitter 
resistance (R B e' = 100 ft 


V CER (sus) 




0.2 




60b 


- 


70 b 


- 


90b 


- 




Base-to-Emitter Voltage 


V B E 


4 
4 


5 a 
15 a 




~ 


1.3 
3.5 


- 


1.3 
3.5 


_ 


1.3 
3.5 


V 




Collector-to-Emitter 
Saturation Voltage 


V CE (sat) 




5 a 
15 a 


0.5 
5 


- 


1.3 
3.5 


- 


1.3 
3.5 


- 


1.3 
3.5 


V 




Magnitude of Common-Emitter 
Small-Signal Short-Circuit 
Forward-Current Transfer Ratio: 
f = 1 MHz 


|h fe | 


4 


1 




5 


- 


5 


- 


5 


- 






Common-Emitter, Small-Signal, 
Short-Circuit, Forward-Current 
Transfer Ratio: 
f = 1 kHz 


h fe 


4 


1 




25 


- 


25 


- 


25 


- 






Thermal Resistance: 
Junction-to-case 


R 0JC 








- 


1.4 


- 


1.4 


- 


1.4 


°c/w 





25 

i*° 

I ' 5 

f 10 
* 

< 




COLLECTOR-TO-EMITTER V0LTACE (VCE>*~ 4 V 
CASF TFMPFRATURE IT^).2S'C 



















































































































































































































































COLLECTOR CURRENT llrl A 

92CS-I9588 

Fig. 5 - Typical gain-bandwidth product as a 
function of collector current for 
2N6246, 2N6247, 2N6248,and2N6469. 



12 

x 10 

s 

1 9 

! . 

I 7 

o 

£ 6 
S 5 

" 3 

1 2 

1 


COLLECTOR-TO- EMITTER VOLTAGE 


(v CE ). 


4 


V 




















































































































































































































































































































































0. 


)l 
































* In accordance with JEDEC registration data format US-6 BDF-21. 
3 Pulsed; pulse duration = 300 (is, duty factor = 1.8%. 



CAUTION: Sustaining voltages VcEO< tu *> and V CER<*<"> 
MUST NOT be measured on a curve tracer. 



COLLECTOR CURRENT del— A 92CS-22449M 

Fig. 6 - Typical gain-bandwidth product as a 
function of collector current for 
2N6470, 2N6471, and 2N6472. 




BASE-TO-EMITTER VOLTAGE (VgEl — V 



92CS-2I944RI 



Fig. 7 - Minimum reverse-bias second-break- 
down characteristics for all types. 
(Values for p-n-p types are negative). 



ujl0 3 « 
I . 




















































CASf' 
























25'C~ 




V 
























^ 


$ 










3 io- 
* 4 

o 1 


















































\P 
















































































































































































































































































* 6 








5 B 



„I0>. 

\ o ' 

5 2 

5 io 2 - 

3 10 

j ; 


COLLECTOR- T0-EM1TTER VOLTA0E IVCE> '- 4V 




-H- 










| 








' 


















Je 












i ~ 














A 


fe . 






-i- 


1 






T^ 












& 


























^ 






















^ 
































c 




















— 






















































































































.L 






, i 



































1666, 

* . 
1 

5 " 

X 

* IOO 

* 8 

i 

S 2 

° 10 






4 V 




1 








1 


| | 




| 






— 


< 










CASE TEMPERATURE (T C H2»*C 


— 






sC 


ex. 


















r^ 


f^£ 



























































































































-001 -0. 



COLLECTOR CURRENT (I r ) — A 



COLLECTOR CURRENT (Ic*— A 



COLLECTOR CURRENT lie)— A 



Fig. 8 • Typical dc beta characteristics for 
2N6246, 2N6247. and 2N6469. 



Fig. 9 • Typical dc beta characteristics 
for 2N6248. 



Fig. 10 - Typical dc beta characteristics for 
2N6470, 2N6471, and 2N6472. 



201 



POWER TRANSISTORS 



2N6246. 2N6247, 2N6248, 2N6469, 2N6470, 2N6471, 2N6472 

ELECTRICAL CHARACTERISTICS FOR P-N-P TYPES. At cese temperature (T c ) - 2S°C unless otherwise specified 



SYMBOL 


TEST CONDITIONS 


LIMITS 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6469 


2N6246 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6247 


2N6248 


VCE 


VBE 


'c 


>B 


Min. 


Max. 


Min. 


Mix. 


VCE 


VBE 


'C 


•b 


Min. 


Mix. 


Min. 


Mix. 


( CER 

(R BE ) = '°° n 


-35 
-55 








- 


-200 


- 


-200 


-75 
-95 








- 


-200 


- 


-200 


KA 


'CEX 


-45 
-65 


1.5 
1.5 






- 


-200 


- 


-200 


-85 
-100 


1.5 
15 






- 


-200 


- 


-200 


/iA 


T c - 150°C 


-45 
-55 


1.5 
1.5 








-5 






-70 
-90 


1.5 
1.5 






- 


-5 


_ 


-5 


mA 


'CEO 


-20 
-30 










- 


-1 


_ 


-1 


-40 
-50 










- 


-1 


- 


-1 


mA 


'ebo 




5 







- 


-5 


- 


-5 




5 







- 


-1 


■ - 


-1 


mA 


h FE 


-4 
-4 
-4 




-5 a 
-7» 

-15" 




20 
5 


150 


20 
5 


100 


-4 
-4 

-4 
-4 




-5" 
-6« 
-10« 
-15 a 




20 
5 


100 


20 
5 


100 




V CE0 (susl 






0.2 





-40 b 




-60 b 








-0.2 





-80 b 


. 


-100 b 


. 


V 


Vcer(sus) 






-02 




-50b 


- 


-70 b 


- 






-0.2 




-90 b 


- 


-1T0 b 


- 


v B e 


-4 
-4 




-15 a 
-7 a 




- 


-35 


- 


-2 


-4 
-4 




-6 a 
-5» 




- 


-1.8 


- 


-1.8 


V 


V CE ($at) 






-5 a 
-7 a 
-15 a 
-15 a 


-05 
-0.7 
-5 
-3 


- 


-1.3 
-3.5 


- 


-1.3 
-2.5 






-5» 
-6» 
-15» 
-10* 


-0.5 
-0.6 

-4 
-2 


- 


-1.3 
-3.5 


- 


-1.3 
-3.5 


V 


M 

1 - 2 MHz 


-4 




-1 




5 


" 


5 


- 


-4 




-1 




5 


- 


5 


- 




f - 1 kHi 


-4 




-1 




25 


- 


25 


- 


-4 




-1 




25 


- 


25 


- 




R 9JC 










- 


1.4 


- 


1.4 










- 


1.4 


- 


1.4 


°C/W 



* In accordance with JEOEC registration data format (JS-6 RDF-2). 

* Puliad; pulee duration - 300 m. duty factor -14%. 



b CAUTION: CAUTION: SuiUininf *olBf€ V ceo liusl ind V C er>llu 
MUST NOT be mmmmd en » curve tracer. 




OS -075 -1.0 -125 -IS 

BASE-TO-EMITTER VOLTAGE (Vac)— V 92CS-I9! 

Fig. 1 1 - Typical input characteristics for 
2N6246, 2N6247, and 2N6449. 



-S00 
-500 

• 

| -400 

z -500 
-100 


COLLECTOR-TO-EMITTER VOLTAOE 


<*E 


»■ 


4V ffffffl 








J3 


























H 


foWftij 










:iii 


=ii 


~ 






= 


r~ 


Sfl 


















iiS 




- 


fin 


=if' 






V 


s9 












:~:f! 


V: :: . 


~": 






^tn 


S/ 


^ 




:::: 




~:: 




?;;; 




:'::: 




'»*> 


































y. . 


:'::;' 




•> 












<& 














Sii 










*3 


ffrtt 






uil 


iS: 




S 








^- 


P 


•T 






















c 




-0^ 


a 


-0 


5 


-0.1 


■5 


-L 





- 


.2 


-1. 


5 


-17 


5 




BASE-TO-EMITTER VOLTAGE (VB£r-V 



Fig. 12- 



2N6248. 



-15 
U.5 
J -10 
I-7.S 
u "5 
-1.5 


CASE TEMPERATURE <T C ).2S'C J I 1 1 I 1 1 1 1 1 1 1 1 1 1 1 1 1 [ 1 [ 




IMIIiin 


l J lI«')'-BO0mAJ| | | | | 1 






-BASE C 








L-l25wU4| 












iftttj" 


400 1 | | | | | f. 












| 


iOOj 


















-50 1 1 1 ll 1 1 1 1 














-2p[ | 1 1 | | | [ | | 





-15 
-12.3 

T 
s 


CASE TEMPERATURE(T C |.25*C 






















B5W?5 
















iBAS 


E C 
























Em 


d LUilL, 








m 




Sft 




















p-400|{ttffl 














—£ 


s 










Sr 








'—■ 




Si-iooBSSfi 








5» 








nt: 


am 


rT^iniiiiiinttttti 






-2.a 
















I'llllljillll 








TrrHtfl- M 


WWII 













! 




1 




i 


-• 




» 


2 


-M 



0.25 05 075 

BASE-TO-EMITTER VOLTAGE IVej)— V ucs-n 

Fig. 13 ■ Typical input characteristics for 
2N6470. 2N6471, and 2N6472. 




COLLECTOR-TO-EMITTER V0LTA6E(V CE ) — V 92CS-I997 

Fig. 14 - Typical output characteristics for 
2N6246, 2N6247, and 2N6469. 

202 



COLLECTOR-TO-EMITTER VOLTAOE («££)— V 

92CS-2I849RI 

Fig. 15 - Typical output characteristics for 
2N6248. 



COLLECTOR-TO-EMITTER VOLTAGE (V CE I V 

Fig. 16 - Typical output characteristics for 
2N6470, 2N6471, and 2N6472. 



POWER TRANSISTORS 



2N6246, 2N6247, 2N6248, 2N6469, 2N6470, 2N6471, 2N6472 




40 60 80 K)0 
COLLECTOR-TO-EMITTER VOLTAGE (VcE> — V 



92CS-22380 




aASE-TO-EPWTTER VOLTAGE (V BE )— V 



Fig. 18 - Typical transfer characteristics for 
2N6470, 2N6471, and 2N6472. 



Fig. 17 - Maximum operating areas for all types.* 




COLLECTOR CURRENT(I C ) A MCS-2Z1SO 

Fig. 19 - Typical saturated switching charac- 
teristics for 2N6470, 2N6471, and 
2N6472. 



1.2 
4. 0.8 

1 

1 06 


~: 






























: REPETITION RATE "500 PULSES/1 


r 




H5 


S: 


-COLLECTOR SUPPLY VOLTAGE (V cc )»-ZOV 




HH 






£*> 


,-i B2 -i c /io 














=:: 




jji-iifeifedll: 












=5 


s* 


ft? 






« 












™ 




Sr 


























£HS 


HJ 




wj-= 


3: 

02 


•--; 


- TORN -ON TIME(t 0(1 ) 


r*j 
















:— 
























_t|i delay time 


l 















COLLECTOR CURRENT{I C ) A 



F/g. 20 - Typical saturated switching charac- 
teristics for 2N6246, 2N6247, 
2N6248, and 2N6469. 



*For p-n-p devices, voltage and current values are negative. 



203 



POWER TRANSISTORS 



2N6249, 2N6250, 2N6251 

450-V, 30-A, 175-W Silicon N-P-N 
Switching Transistors 

For Switching Applications in Industrial and Commercial Equipment 



RCA-2N6269. 2N6250 and 2N6251 are 
multiple epitaxial silicon n-p-n power tran- 
sistors utilizing a multiple-emitter -site struc- 
ture. Multiple-epitaxial construction maxi- 
mizes the volt-ampere characteristic of the 
device and provides fast switching speeds. 
Multiple-emitter-site design assures uniform 
current flow throughout the structure, which 
produces a high Ig/b and a large safe-oper- 
ation area. 

These devices use the popular JEDEC TO-3/ 
TO-204MA package; they differ mainly in 
voltage ratings, leakage-current limits, and 
VfjE(sat) ratings. 

The exceptional second-breakdown capabili- 
ties and high voltage-breakdown ratings make 



these transistors especially suitable for off- 
line inverters, switching regulators motor 
controls, and deflection circuit applications. 

The high gain and high Eg/b energy-handling 
capability of the 2N6249 make it an excel- 
lent choice for motor-control applications 
in which large winding inductances are en- 
countered and high surge currents are re- 
quired to start the motor. 

The high breakdown voltages, low saturation 
voltages, and fast-switching capability of the 
2N6250 and 2N6251 make them especially 
suitable for inverter circuits operating di- 
rectly off the rectified 1 1 5-V power line or a 
bridge configuration operating from the 
rectified 220-V line. 



Features: 

■ High voltage ratings: 

V CBO = 450V(2N6251) 
375 V (2N6250) 
300 V (2N6249) 

■ High dissipation rating: 

Pt=175W 

■ Low saturation voltages 

■ Maximum saf e-area-of- 

operation curves 



TERMINAL DESIGNATIONS 




JEDEC TO3/TO-204MA 



MAXIMUM RATINGS, Absolute-Maximum Values: 2N6249 2N6250 2N6251 

* v CBO 300 375 450 

V CE0 (sus) 200 275 350 

* V CEX ($US > <V BE = 0V) 225 300 375 

V CER (sus) (R BE )<50« 225 300 375 

* v EBO 6 6 6 

* 'c 10 10 10 

'CM 30 30 30 

* 'b 10 10 10 

At T c up to 25 C and V CE up to 30 V 1 75 1 75 1 75 

At T c up to 25 C and V CE above 30 V Derate linearly at 1 ' 

* T J + T $tg -65 to +200 

At distances > 1/32 in. (0.8 mm) from case for 10s max. . . . 230 

* 2N-Series types in accordance with JEDEC registration data format (JS-6, RDF-1 ). 



V 
V 
V 
V 
V 
A 
A 
A 

W 

C/W 

°C 



• 

i 

£ 100 

i : 
e . 
i 

IV 












































































f 
§/ 


5 


f* 


















-i 


^S 












































£&<* 

^2**-. 




























P 








\\ 






























K 


• 1 






•»• 



NUMBER OF THERMAL CYCLES 



Fig. 1 — Thermal-cycle rating chart for 
all types. 





COLLECTOR CURRCNT(I C I 



Fig. 2 — Typical normalized dc beta char- 
acteristics for all types. 



COLLECTOR CURRENT <X C > — * 

?ZCS-I9«t0ftl 

Fig. 3 — Typical base-to-emitter saturation 
voltage characteristics for all types. 



\ 

I 

5 2 

IT.. 

ki i 

£J 0.5 


IC'IB'IO <2N«249I,BC2 
































































^ 








§ 


4~H*ffi 




ii_LU»c. 1) 1 1 1 II Ml 












jK 1 1 


















TTTtfT 


ffl 


fffrj 


Sj 







COLLECTOR CURRENT (I c ) — k 

Fig. 4 — Typical collector-to-emitter 
saturation voltage charac- 
teristics for all types. 



?M 



POWER TRANSISTORS 



2N6249, 2N6250, 2N6251 



ELECTRICAL CHARACTERISTICS, At Case 


Temperature (Tq) = 


25° C Unless Otherwise Specified 




CHARAC- 
TERISTIC 


TEST 
CONDITIONS 


LIMITS 


U 
N 

T 
S 




DC 
l/OLT 
AGE 

(V) 


DC 
CUR- 
RENT 

(A) 


2N6249 


2N62S0 


2N62S1 




V C E 


"c 


>B 


MIN. 


TYP. 


MAX. 


MIN. 


FYP. 


MAX. 


MIN.' 


ryp. 


MAX. 




'ceo 


150 
225 
300 









- 


- 


5 


- 


- 


5 


- 


- 


5 


mA 




'CEV 
V BE =-1.5 


225 
300 
375 
450 






- 


- 


5 


- 


- 


5 


- 


- 


5 




'CEV 

V BE = -1 o .5 
T C =125°C 


225 
300 
375 
450 






- 


- 


10 


- 


- 


10 


- 


- 


10 




'ebo 

V BE = -6 








- 


- 


1 


- 


- 


1 


- 


- 


1 


mA 




V CE o<sus) 




02 




200b 


- 


- 


275b 


- 


- 


350b 


- 


- 


V 




V CE r(sus) 
R B E=50n 




02 




225b 


- 


- 


300b 


- 


- 


375b 


- 


- 


V 




v EBO 
l E =1mA 








6 


- 


- 


6 


- 


- 


6 


- 


- 


V 




"FE 


3 
3 
3 
4 


10« 
108 
10* 
10a 




10 


- 


50 


8 


- 


50 


6 


- 


50 






V BE (sat) 




10a 
10a 
10a 
16» 


1 

1.25 

1.67 

3.2 


- 


- 


2.25 


- 


- 


2.25 


• - 


- 


2.25 


V 




V CE (sat) 




10" 
10a 
108 
16a 


1 

1.25 

1.67 

3.2 


- 


- 


1.5 


- 


- 


1.5 


- 


- 


1.5 


V 




Ih fe | 
f=1MHz 


10 


1 




2.5 


8 


- 


2.5 


8 


- 


2.5 


8 


- 






'S/b 

t p = 1s nonrep. 


30 






5.8 


- 


- 


5.8 


- 


- 


5.8 


- 


- 


A 




E S/b v BE=-^ 
R B = 50f2, 
L=50/iH 




10c 




2.5 


- 


- 


2.5 


- 


- 


2.5 


- 


- 


mJ 




V CC =200V, 
lB1 = -'B2 




10 
10 
10 


1 
1.25 
1.67 


- 


0.8 


2 


- 


0.8 


2 


- 


0.8 


2 


Ms 




t S 

V cc = 200 V, 

•b1 = -'B2 




10 
10 
10 


1 
1.25 
1.67 


- 


1.8 


3.5 


- 


1.8 


3.5 


- 


1.8 


3.5 




tf 

V CC = 200V, 

'B1 = -'B2 




10 
10 
10 


1 
1.25 
1.67 


- 


0.5 


1 


- 


0.5 


1 


- 


0.5 


1 






R 0JC 


10 


5 




- 


- 


1 


- 


- 


1 


- 


- 


1 


°C/V 


1/ 



COLLCCTOK- VOITASE (V C £| ■» "l||||j| rUtiHl! HftTI 


i\Arr 
10 

i . 
- 7 






■ 4 


r Hi£itr 


1 


4- ,iiiiiiiiiiiiiiiiiiininiiiiiiiinii 














'"Wpn 






w 


^H*'" 


M 




1 S 

o 3 

£ 2 


:::: 




||Fstf8 








II 













Fig. 5 — Typical transfer characteristics 
for all types. 




eOLL£CT0H-TO-EI»TU VOLTMC IVfc t )— V 

Fig. 6 — Typical output characteristics for 
all types. 



4 

\ 

1 <" 

a 
1 

2 o.oi 

*ODOI 


TRANSISTO 
LIWT5 OF 


R SHOULD K 
THE CURVE 


OPERATED 
SHOWN IN PI 


ITtTHIN THE 

B.I 
























; "* 


■ . i i 


, ,.J. UU1 


J L-Ll 


l_i — i_i_L 



Fig. 7 — Typical thermal response characteristics 
for all types. 




* 2N-Series types in accordance with JEDEC registration data format (JS-6 RDF-1). 

* Pulsed; pulse duration <300 us, duty factor = 2%. 

b CAUTION: The sustaining voltages V CE0 (sus) and V CER (sus) MUST NOT be measured on a curve tracer. 



Fig. 8 — Typical rise-time characteristics for 
all types. 



.205 



POWER TRANSISTORS 



2N6249, 2N6250, 2N6251 



ido 

s 

6 
4 

2 

< IO 

I • 
X 6 

S « 

C 

a: 

3 
U 

s « 

U 

S ' 

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6 

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2 
O.I 


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I, 


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„.. .w-. w..-,.„„w ,. c ,-«, V 
































J 


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■ 1 








n 


















"I 




1 








I 


















PULSE OPERATION «l 








! Ir. MAX.(PULSED) 


i 






























ixl 












i 




_...j . 








I ■" 






-- 




-\ 




%~ 


\ 





ic 


*AX. 


(CO 


ill 
NTINUOU 


1 

II I'V 


V 














^ 










— \ 


t\ — 




CT'" 






X \ 




\ 








. ..J 

OISSIPA1 


10 
















\ 








K-LIMITED-T 


l_i 










\ 






_ 


1 




, 1 |l| ; 


1 






\A 




F, 






' 


II! 








V 


\ \ 


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■■■ III 


i 






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w. 




\ 


"1 


■-[ 


• FOR SINGLE ! 
NONREPETITIVE 
PULSE ! , 


•■■■ 

■1 






cW \ 

f\ \ ~ 

UW|5 r 


\"\ 


\ 


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r\ 






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\ \ 


\\ 


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' 












\ 












=s 








\ 






| V CE0 MAX.«200 V (2N6249) 








\ 








■ J V CE0 MAX. = 275 V (2N6250) 








i 




T ■ 








v 








\ ■ 


' 










V CE0 KIM 






-- 




i 




^ 



46810 2 4 6 8 100 2 

COLLECTOR-TO-EMITTER VOLTAGE (V CE ) — V 



4 6 8 K>00 



92CS-I9468 



F/fli y — Maximum operating areas for all types at T c « 25°C. 



PULSE DURATION- 20 /•• 

REPETITION RATE- 300 Hi 

COLLECTOR SUPPLY VOLTASE (Vccl-200 V t 

CASE TEMPERATURE (Tc>-2S*C 

IC/I( ■ 10 (2N624»I,S<2N«250I, 




Fig. 11 — Typical storage-time characteristics 
for all types (with constant forced 
gain). 



PULSE 
REPET 
COLLEC 
CASE T 

2-'< 


DURATION -20,. 

TION RATE-SOO H> 

TOR SUPPLY VOLTAOE (Vcc 

EMPERATURE (T C I>2S*C 

A <2N«24*ll.2SA(2N«290l 

67 A(2NS28H 


• 200 V § 










~ 


niiBSE : :|::lr 




H~ 


iS 














$ 4 

i 

S 2 


r;:: 


:■ ■fesfcT-fSji 


iti 


OS 
















■B 


IJHpfefc 


5? 


sA 


*oy^ 










::li 


U:l|::n|n:Hn?? 




^Si 


i 


s^f. 


■~. 


rJ. : {n??{S«Jj5 




H'&? 


A3 


Sc 






= 


l 


iBjg 








*jtj 















2 4 


• 




t 









2 





COLLECTOR CURRENT (I c ) — A 

Fig. 12 — Typical storage-time characteristics 
for all types (with constant base 
drive). 



10 

8 

6 

4 

2 

1 

T 8 
if s 

£ * 

oc 

3 

u 

o 

►- 
<j 

JO.I 

o 

O 8 

6 

4 

2 

001 




"^T=V 








-H+H — h-l-H — t- 














DISSIPATION- LIMITED" 











— 


















r 


< I 





























— — 


H+ 














! 








1 


! 
.4... 


1 


^ 










! 












_„.-4i 
III 


i ' ■ 












1 " 


...j 








1 


i 


--j~ 










■CA 

"'f 


3E TEMPER 

1 ■ ■-: ' 


ATURE (1 

' ' ! 
i 


c» 


■25*C 


CASE TEMPERATURE (T c l»IOO*C 








































f. , 
























i 


.. i j_ j 






























...|_+-j-i 


1. ..__i 












"s/i 










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"1 


[T 

n - 






























_ .._. 








\ 












" ; i "' i. 

-j-j- 


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1 








.. 
















j 

! 
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■ 


■--;■- 


: 






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... 


ZZ_ 










- J 1 — 






















































Si 








— i— 










1 


















A 


















T 
















f vt 




















1 


















> 










* 










V CE0 MAX.'20O V (2N6249 
V CEO MAX.>275 V (2N625C 
V CE0 MAX." 350 V (2N629I 


l| " 






1 








r - 




l- 






... 








f 






— 








■■• -(■■ 


i 


- 






.... 








III 


... 






H 






i 


Id 


















1 





4 6 8, 



COLLECTOR-TO-EMITTER VOLTAGE (V CE I — V 92CSH 

Fig. 10 — Maximum operating areas for all types atT^ m 100 C. 




Fig. 13 — Typical fall-time characteristic for 
all types. 



PULSE DURATION- 20 »• 

REPETITION RATE-9O0 Hi 

COLLECTOR SUPPLY VOLTAGE (VcC>*200V 

CASE TEMPERATURE ITcl-29'C 

IC'I»'IO (2N4249), »(!»«250l, 




Fig. 14 — Typical inductive- and resistive-load 
fall-time characteristics for all types. 



206 



POWER TRANSISTORS 



2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 



20-Ampere Complementary N-P-N and P-N-P Monolithic 
Darlington Power Transistors 



60-80-100 Volts, 160 Watts 

Gain of 2400 (Typ.) at 10 A (2N6282, 2N6283, 2N6284) 

Gain of 3500 (Typ.) at 10 A (2N6285, 2N6286, 2N6287) 



The RCA-2N6282, 2N6283, and 2N6284 and 
the 2N6285, 2N6286, and 2N6287 are 
complementary n-p-n and p-n-p monolithic 
silicon Darlington transistors designed for 
general-purpose amplifier and low-speed 
switching applications. The high gain of 
these devices makes it possible for them to 
be driven directly from integrated circuits. 
These devices are supplied in the JEDEC 
TO-3 hermetic steel package. 



Features: 

■ Operates from IC without predriver 

■ High reverse second-breakdown capability 

■ Monolithic construction 

■ High voltage ratings: 

V CE0 (sus) = 60 V Min. - 2N6282, 2N6285* 
= 80 V Min. - 2N6283, 2N6286* 
= 100 V Min. - 2N6284, 2N6287* 

Applications: 

■ Power switching 

■ Hammer drivers 

■ Series and shunt regulators 

■ Audio amplifiers 



MAXIMUM RATINGS, Absolute-Maximum Values: 



v CBO 

V CEO (sus) 

V EBO 

■c 

'cm 

'b • ■ 

PT * o 

1><25C 

T c >25 C . . . Derate linearly 

Tstg, TJ 

At distances > 1/1 6 in. (1.58 mm) from case for 10s max. 

* In accordance with JEDEC registration data. 

* For p-n-p devices, voltage and current values are negative. 



2N6282 


2N6283 


2N6284 




2N6285* 


2N6286* 


2N6287* 




60 


80 


100 


V 


60 


80 


100 


V 


5 


5 


5 


V 


20 


20 


20 


A 


40 


40 


40 


A 


0.5 


0.5 


0.5 


A 


160 


160 


160 


W 




_ 915 .- 




W/°C 




-65 to 200 . 




°r. 




235 




°c 



TERMINAL DESIGNATIONS 




JEDEC TO-3 



C 



< 



6e 



Fig. 1 - Schematic diagram for 2N6282, 2N6283, 
and2N6284. 



< 



nc 



< 



._l 



6e 

•2C3-ZWZ9 

Fig. 2 - Schematic diagram for 2N628S, 2N6286, 
and2N6287. 




92CS-2913I 

Fig. 3 — Power derating curve for all types. 



207 



POWER TRANSISTORS 



2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 



ELECTRICAL CHARACTERISTICS, af Case Temperature (T c ) = 2&C Unless Otherwise Specified 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6282 
2N6285* 


2N6283 
2N6286* 


2N6284 
2N6287* 


VCE 


V B E 


'c 


'B 


MIN. 


MAX. 


MIN. 


MAX. 


MIN 


MAX. 


'ceo 


30 
40 
50 











- 


1 


- 


1 


- 


1 


mA 


'CEX 


60 

80 

100 


-1.5 
-1.5 
-1.5 






1 


0.5 


— 


0.5 


— 


0.5 


T C =150°C 


60 

80 

100 


-1.5 
-1.5 
-1.5 






— 


5 


- 


5 


- 


5 


'ebo 




-5 







- 


2 


- 


2 


- 


2 


mA 


V CE0 (sus) 






0.1 a 





60 


- 


80 


- 


100 


- 


V 


hFE 


3 
3 




20 3 
10 3 




100 
750 


18,000 


100 
750 


18,000 


100 
750 


18,000 




V CE (sat) 






20 a 
10a 


0.2 
0.04 


- 


3 
2 


- 


3 
2 


- 


3 
2 


V 


V BE 


3 




10 3 




- 


2.8 


- 


2.8 


- 


2.8 


V 


V BE (sat) 






20 3 


0.2 


- 


4 


- 


4 


- 


4 


V 


h fe 
f = 1 kHz 


3 




10 




300 


- 


300 


- 


300 


- 




Ih fe | 
f = 1 MHz 


3 




10 




4 


- 


4 


- 


4 


- 




C ob 

V CB =10V,I E 0, 
f = 0.1 MHz 

2N6282-84 
2N6285-87 










- 


400 
600 


- 


400 
600 


- 


400 
600 


pF 


's/b 

t = 1s, nonrep. 


30 








5.3 


- 


5.3 


- 


5.3 


- 


A 


R 0JC 












1.09 


- 


1.09 


- 


1.09 


°c/w 



8 Pulsed: Pulse duration = 300 jus, duty factor = 1 .8%. 

In accordance with JEDEC registration data. 
• For p-n-p devices, voltage and current values are negative. 



0.1 



»I0*« 

\: 

» io«- 

I : 

z 

I * 
£»'• 

O 8 

i 












































































































































,•> 






















































vc' 


u 


0^^ 
























^X" 






















































































































































4 • • t « • • I 4 • • 

COLLECTOR CURRENT (I c >-A 



MCS-ttIM 

Fig. 4 — Typical dc beta characteristics for 
2N6282, 2N6283, and 2N6284. 



o 

i . 

i : 

H 4 

Z 

o I0 3 - 
o .* 

i 4 

°,o' 


COLLECTOR-TO- EMITTER VOLTAGE ( 


V CE >-3V 














































\^ 
































s 






































Kfe 






N 


















\\ 


















\l 


















3: 


















__S 











































COLLECTOR CURRENTII c I— « 



Fig. S — Typical dc beta characteristics for 
2N6285, 2N6288, and 2NS287. 



io*. 

• 

? 2 

3.o< 


— | — H-H — ( — ' 














J 1 1 1 1 

2N6282,2Ne2S3,2N«2 






























2N« 
































































































































































■" z 

K> 












COLLECTOR CURRENT (l e ). MA* ' """' 
















1 III 










1 III 


l ill 


1 







. FREOUCNY (f)-tHl 

l>OR »-«-p DEVICES, VOLTASE AND CURRENT VALUES ARE NEGATIVE 
MO- 2*134 

Fig. 6 — Typical small-signal current gain for all types. 



208 



POWER TRANSISTORS 



2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 



» 

40 

20 

< 

lio- 

.? • 
i « 

c * 

K 
D 

i a 

3 i- 

2 « 

6 
4 

2 


CASE TEMPERATURE ( T c ) - »«C 1 
(CURVES MUST BE DERATED LINEARLY I 










WITH INCREASE IN TEMPERATURE) § 










^n88TTO!fHfS^p 




^'iH||[[ 




















H DC OPERATION 
S DISSIPATION-LIMITED 










iff 






§|jj|j|| 1 s/b-LIMITEO g 






^ 


t% 














11 




SSI* FOR SINGLE §£ 
ggj NONREPETITIVEp 
^ PULSE B 




















! V CE0 ( MAX ) • 80V <2N62S3,2NS2M 
■ V CE0 (MAX)-I00V(2N6284,2N6287 


' Si 






■ 




•Hft 






: 


Mf ■ 




Htfr'" 




™-:: 






2 4 6 8 1 2 30 


« 60 


801 


2 


4 


6 6 1 



10 



100 



COLLECTOR-TO-EMITTER VOLTAGE IV C£ )-V 

92CM-29I30 
•FOR p-n-p DEVICES, VOLTAGE AND CURRENT VALUES ARE NEGATIVE 

Fig. 7 — Maximum operating areas for all types. 



35 




























1 X 


| | 1 1 1 1 1 1 1 1 1 1 | 1 [ 1 


Hffl 










?M 














Z 
1 20 














S^ is 

8 l0 














9 


























COLLECTOR-TO-EMITTER SATURATION VOLTAGE 

[v CE (,ot>]-v 

FOR p-n-p DEVICES. VOLTAGE AND CURRENT VALUES ARE NEGATIVE 

Fig 8 - Typical saturation characteristics for all types. 



-|0 6 

2 _| 

* 

-0.1 








COLLECTOR SUPPLY VOLTAGE (V c c' s "30 










CASE TEMPERATURE (T C )-25'C 








J BI "IR2 


HI 










































'^SX 


1 






























i ,| 


















^+0; 




















! 
'a * T V B 


i 
E (om-o 








1 




































^ 






5 S 













COLLECTOR CURRENT II C l-A 

92CS-29I37 

Fig. 10 — Typical switching times for 2N6285, 
2N6286. and 2N6287. 



">6 
I 2 

i 1 

* 6 














CASE TEMPERATURE (T c )-25-C 












i c /r B .25o I 1 
























— - 


H 


1 


































, 










^ 










































































































V 






•a 


AT V BE (OFF) ■ 


DV 


































n 


. 














B 






Z 4 




L 



COLLECTOR CURRENT <I C )-A 

92CS-29I36 

Fig. 9 - Typical switching times for 2N6282, 
2N6283, and 2N6284. 



.209 



POWER TRANSISTORS . 



2N6300, 2N6301 

8-Ampere Silicon N-P-N Monolithic Darlington 
Power Transistors 



60- and 80- Volt, 75-Watt Types With Gain of 750 at 4 Amperes 



The RCA-2N6300 and 2N6301 are mono- 
lithic n-p-n silicon Darlington transistors de- 
signed for low- and medium-frequency power 
applications. The double epitaxial construc- 
tion of these devices provides good forward 
and reverse second-breakdown capability. 
Their high gain makes it possible for them to 
be driven directly from integrated circuits. 

These transistors are supplied in JEDEC 
TO-21 3MA/TO-66 hermetic packages. 



Oc 



Fig. 1 
MAXIMUM RATINGS, Absolute-Maximum Values: 



QE 9ZCS-I99I6RI 

■ Schema tic diagram of 2N6300 and 2N630 1 
Darlington power transistors. 



'CEO- 
; EBO' 



T C <25°C 

T C >25°C 

T„ Tj . . 



'stg- 



2N6300 


2N6301 




60 


80 


V 


60 


80 


V 


5 


5 


V 


8 


8 


A 


16 


16 


A 


120 


120 


mA 


75 


75 


W 


See Figs. 


2 and 3 




-65 to +200 


°C 



At distances > 1/16 in. (1 .58 mm) from set 
seating plane for 10 s max 

* In accordance with JEDEC registration format JS-6 RDF-2. 



CASE TEMPERATURE (T C )-2S*C 
(CURVES MUST BE DERATED LINEARLY 
WITH INCREASE IN TEMPERATURE) 




10 " " "100 

COLLECTOR-TO-EMITTER VOLTAGE (V C£ )- V 92CM-30S26 

Fig. 2 — Maximum operating areas for types 2N6300 and 2N6301 . 



Features: 

■ Operation from IC without predriver 

■ Low leakage at high temperature 

■ High reverse-second-breakdown capability 

Applications: 

■ Power switching 

■ Audio amplifiers 

■ Hammer drivers 

■ Series and shunt regulators 



TERMINAL DESIGNATIONS 




ITS 200 

CASE TEMPERATURE (Tc)-t 

■KI'Wl 

Fig. 3 — Derating curve for both types. 



5 2 

l '°\" 

z 6 

It 4 

z 

8 ' 
































COLLECTOR-TO-EMITTER VOLTAGE (V CE )' 3 V 












































































































































*$ 




































































x 




















! 

8 2 

K> 2 










^ 




























if 
























5 


\s 


** 


































































































■ 










i 


i 



COLLECTOR CURRENT!!,.) -A , ac ,. 24MT „ 

Fig. 4 — Typical dc beta characteristics for both types. 



100 

* , 

i 

* 

10 




































































































































































































CASE-TEMPERATURE 
CHANGE (^iT c ).50'C 








St 




























































a 


kl50 


V 


9 


■c\io 

\ 


)'C 


V 


9" 

k 


c 
























. ' 





















NUMBER OF THERMAL CYCLES 



Fig. 5 — Thermal -cycling rating chart for both types. 



210 



POWER TRANSISTORS 



ELECTRICAL CHARACTERISTICS,^ Case Temperature (Teh 2S°C Unless Otherwise Specified 



CHARACTERISTIC 
SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


DC 

VOLTAGE 

V 


DC 

CURRENT 

A 


2N6300 


2N6301 


V C E 


VEB 


V B E 


■c 


IE 


>B 


MIN. 


MAX. 


MIN. 


MAX. 


'CEO 


30 
40 














- 


0.5 


- 


0.5 


mA 


'CEX 


60 
80 




-1.5 
-1.5 








- 


0.5 


- 


0.5 


'CEX 
Tc= 150°C 


60 
80 




-1.5 
-1.5 








- 


5 


- 


5 


■ebo 




5 











- 


2 


- 


2 


mA 


"FE 


3 
3 






8a 
4a 






100 
750 


18.000 


100 
750 


18,000 




VcEO<sus) 








O.ia 






60a 


- 


80a 


- 


V 


VcE(sat) 








4a 
8a 




0.016 
0.08 


- 


2 
3 


- 


2 
3 


V 


V B E 


3 






4a 






- 


2.8 


- 


2.8 


V 


V B E(sat) 








8a 




0.08 


- 


4 


- 


4 


IWel 
f = 1 MHz 


3 






3 






4 


- 


4 


- 




Co bo 
f = 0.1 MHz, 
VCB=10V 















- 


200 


- 


200 


pF 


h fe 
f = 1 kHz 


3 






3 






300 




300 






'S/b 
t= 1 s. 
non rep. 


30 












2.5 


- 


2.5 


- 


A 


R 0JC 














- 


2.33 


- 


2.33 


°c/w 



* In accordance with JEDEC registration data format JS-6 RDF-2. 
a Pulsed: Pulse duration = 300 ^s, duty factor = 2%. 



2N6300, 2N6301 



K> 4 » 








































COLLECTOR CURRENT llj) • I A 
COLLECTOR-TO-EMITTER V0LTA0E (V CE 1 ■» V 
CASE TEMPERATURE (Tc>"25'C 


l.o> s 






























































































































































































































IO 

























































































































































































FREQUENCY if I -MHZ 



Fig. 6 - Typical small-signal gain for both types. 



s 

4 
J 3 

i 

2 




COLLECTOR SUPPLY VOLTAGE IV CC >' 


iOV 












V-V'c' 900 
























































































^ 


V 






y 












^ 


< 


' 
















* 


s 




















\ 







































Fig. 7 — Typical saturated switching-time 
characteristics lor both types. 




BASE-TO-EMITTER VOLTAGE (V K I—V 

92CS-* 

Fig. 8 — Typical input characteristics for 
both types. 




COLLECTOR-TO-EMITTER VOLTMC (Vet' — V 

92CS-244M 

Fig. 9 — Typical output characteristics for 
both types. 



Id f 

s 

i 6 

o 

5 » 
I T 

S-=-4 

£ S 

k 2 

1 

w 1 

2 


1 1 1 1 1 1 1 1 Vc * '-P 00 

1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Ittt" Tc ■ 100'C 


^ilobbla'a'cl 1 1 1 1 1 1 




loo.icyc^l 1 1 1 1 1 1 









S H • ■ 



COLLECTOR CURRENT (I c l— A 



Fig_ JO— Typical saturation-voltage characteristics 
for both types. 



no 


COUICTOR-TO-EMITTER VOLTAGE (V^l'S)* 1 1 1 1 1 1 1 1 1 | : \ 




« 




1 as 

§ KM) 




K T » 


ijf/fW ft- 


3 5.0 


^P^^^gi 


t.t 


mMIIH : 





1 [JJ4^H1J-UKtI 1 1 1 1 1 1 1 1 1 1 iTTTn 1 1 1 1 1 1 1 rriri ■ 



•ASE-TO-EMfTTERVOLTAOEIV^K— V 

92CS-244 

Fig. 11 — Typical transfer characteristics for 
both types. 



211 



POWER TRANSISTORS 



2N6306-2N6308, RCS579 

High-Voltage, High-Current Silicon N-P-N 
Power-Switching Transistors 

For Off-Line Power Supplies and Other High-Voltage Switching Applications 



The RCA-2N6306. 2N6307, 2N6308, and 
RCS579 are epitaxial silicon n-p-n power 
transistors with pi-nu construction. They 
are hermetically sealed in a steel JEDEC 
TO-3 package, and differ mainly in volt- 
age ratings, saturation voltage, and beta 
characteristics. The exceptional second- 
breakdown and high voltage ratings, to- 



gether with the high gain, low saturation 
voltage and fast-switching capability of 
this series of devices, make them parti- 
cularly suitable for inverter circuits 
operating directly off the rectified 120- 
volt power line or in a bridge configura- 
tion operating from the rectified 240-volt 
line. 



MAXIMUM RATINGS, Absolute-Maximum Values: RCS579 2N6306 2N6307 2N6308 

* V CB0 500 500 600 700 

VCER(sus) 

R B E = 50 SI 400 350 400 450 

* V CE o<sus) 250 250 300 350 

* VebO 6 8 8 8 

* IC 8 8 8 8 

* ICM 16 16 16 16 

•Ifl 4 4 4 4 

* PT 

Tcupto25°C 125 125 125 125 

Tc above 25°C Derate linearly to 200°C ■ 

* T stg. T J = 65 to +200 

* T L 

At distance ^1/1 6 in. (1.58 mm) from 

seating plane for 10 s max ^^_^^_^^_ 235 

*2N-Series types in accordance with JEDEC registration data format (JS-6 RDF-1) 




- -_ 250 I 350 
10 IS.6 41.7 IOO 300 K 

COLLECTOR-TO-EMITTER VOLTAGE (VcE>— V 

92CS-26934 



Fig. 1 - Maximum operating areas for 2N6306-2N6308. 



Features: 

■ Fast Switching Speed 

■ High Voltage Ratings: 
VCER - 350 V to 450 V 

■ High Gain at Iq = 3 A 

■ Thermal-Cycling Rating Chart 

Applications: 

■ Off-Line Power Supplies 

■ High-Voltage Inverters 

■ Switching Regulators 

■ Motor Controls 

TERMINAL DESIGNATIONS 
E- 




JEDEC TO-3 



100 














• 














* 














1 • 




'x*u 










o 4 


J* \ > 


'sS 


ft 








8 \ 




tifc. 








-\ 












"io 


m 


• Y- 


\ 


NJ 


'c 





NUMBER OF THERMAL CYCLES 



Fig. 2 - Thermal-cycling rating chart for 
all types. 



6 


COLLECTOR-TO 


-EMITTER VOLTAGE 


(V C E>»3 V _ 


























_ ls6»C 




















1 

<E 

»- 2 

If 

lr°. 

8 6 

8 ' 
i 


CASE 1 


EMPERA 


TURE 


<T 


:>■ 


25 *C 
































-SS* 















































































































2 4 « a 2 468 

COLLECTOR CURRENT dc)— A 

MCS- 26923 

Fig. 3 - Typical dc beta characteristics for 
all types. 



212 



POWER TRANSISTORS 



2N6306-2N6308, RCS579 



ELECTRICAL CHARACTERISTICS. Tq ■ 25°C Unless Otherwise Specified. 



CHARACTERISE 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6306 


2N6307 


2N6308 


RCS579 


VCE 


VBE 


«C 


IB 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


•ceo 


250 
300 
350 











- 


0.5 


— 


0.5 


- 


0.5 


- 


0.5 


mA 


'CEV 


500 
600 
700 


-1.5 
-1.5 
-1.5 






- 


0.5 


- 


0.5 


- 


0.5 


- 


0.5 


T C = 150°C 


450 
550 
650 


-1.5 
-1.5 
-1.5 






- 


2.5 


- 


2.5 


- 


2.5 


- 


2.5 


>EBO 




-6 
-8 










1 




1 




1 




2 


mA 


v CEO (sus ' 






0.1 a 





250 


- 


300 


- 


350 


- 


250 


- 


V 


V CER' SUS * 
RgR = 50 £2 






0.1b 




350 


_ 


400 


_ 


450 


_ 


400 


_ 


V 


VebO 

lE = 1 mA 























6 


_ 


V 


"FE 


5 
5 




3a 
8a 




15 
4 


75 


15 
4 


75 


12 
3 


60 


12 
3 


- 




"be 


5 




3 a 




- 


1.3 


- 


1.3 


- 


1.5 


- 


1.5 


V 


V BE (sat) 






8 a 
8 a 


2 
2.67 


- 


2.3 


- 


2.3 


- 


2.5 


- 


2.5 


V 


V CE <sat) 






3 a 
8 a 
8 a 


0.6 

2 

2.67 


— 


0.8 
5 


- 


1 
5 


- 


1.5 
5 


- 


1.5 
5 


V 


Ihfel 

f = 1 MHz 


10 




0.3 




5 


- 


5 


- 


5 


- 


5 


- 




E S/b 
L = 40 mH 

RqB = 3k ^ 




-1.5 


3 




180 




180 




180 




180 




mj 


's/b 

t = 1 s, nonrep. 


40 








3.15 


_ 


3.15 


_ 


3.15 


_ 


3.15 


_ 


A 


C bo 

V CB = 10V, 
f = 0.1 MHz 










- 


250 


- 


250 


- 


250 


- 


250 


PF 


'r 

V CC = 125V 






3 


0.6 


_ 


0.6 


_ 


0.6 


_ 


0.6 


_ 


0.6 


/to 


V CC = 125 V 
t p = 25/is 

t p = 5/JS 






3 
3 


+0.6 
-1.5 
+0.6 
-1.5 


- 


1.6 
0.8 


- 


1.6 
0.8 


- 


1.6 
0.8 


- 


2 


V CC =125V 






3 


+0.6 
-1.5 


- 


0.4 


- 


0.4 


- 


0.4 


- 


0.4 


R 0JC 










- 


1.4 


- 


1.4 


- 


1.4 


- 


1.4 


°C/W 



. * 2N-Series types in accordance with JEDEC registration data fomat (JS-6, RDF-1). 
a Pulsed; pulse duration = 300 /Us, duty factor<2%. 

D CAUTION: The sustaining voltage Vceo' sus ' and Vcer(sus) MUST NOT be measured on a curve tracer. VcEO< sus ' should 
be measured by the pulse method (Note "a"). 



213 



POWER TRANSISTORS 



2N6306-2N6308, RCS579 



2 
16 

10 
8 

6 
< 

1 « 

Ul 
K 

g 8 

Ul 

3 4 
O 

u 
2 

0.1 

a 

6 

4 


flil 


.JH^SEF 


::: 




:::!::: 


























jli' 


S b 




Ijjljtjj 


: ; HIS 




1 (CURVES MUST BE DERATED LINEARLY 




li C (MAX.) PULSED*! 




1! 


i 


WITH INCREASE IN T 


It 


PtH 


AIU 

JTlF 






PJ!^H;:-|: : :'|::::|:.:.|1!! 


T j-Lj 




¥ 


( !;u !x !r! : 






*\ 




4-f|:'-|.- 


>C0* 






r^ 




sisSJ": 






<£L"© 




:I C (MAX 


ITINUOU 


S'-4rr 




ft 


V 

M ■ 














T*f? 










L T 


Vl 










rrp- 








-T ; 






£ 


^rrr^iV 


»Ii;\ 


















i 














OC OPERATION 




it~l ^ 


» ! ! \i 




y 














DISSIPATION 


-LIMITED 


r 


lf|?jjjll;:P 


If: N 






















'■j- H 


! !H ! 








" i : 


























1 




i::.!\:-: 


:\ :.■■ !\ 






















i ill: 


l-i 




iiir 
























:: : :. i 


•:!::: 


P 
























1. J .:J 






-■f— 


■• 




:■•■ ~rv* 
















^*F0R SIN6LE 
J NONREPETITI 










-... rrtf. 
















'E! i 


! : : ■ 


-, 




















1 PULSE 






i ••;; 






: ;: v 


Cl 






























i:|L 


























: ; ■ 






f 


*o\ 
























i 1 ::! 






1 














-v.. 










: ;::: 






1 ' 
























]' ' 


;5£ 


. • • 


fUAV 1 ' 


50V T 
















lYCEO >■"««•<-« 
















5= 




■—a 


N=T|r 


^_j_J_^ 
































: X J .. 










;t| ■ 




ina 


Bisys 


*hs 


$ 


BfMNf 


H*W 


IH'BtfcM 


itsisst 


enm 










| 1 




3jii 


:■•: :•:: 


:.■= :;:i 




SJi ?t 


i-bi. hiiisir 


il;i::^iiir| ; 


i-Li. - 














1 




2 


4 




6 8 


K> 1 


16 s 




41.7 6 


8 100 






25 


3 « 


« 


8 I000 



COLLECTOR-TO-EMITTER VOLTAGE <Vce> — V 
Fig. 4 - Maximum operating areas for RCS579. 



92CS-26322 



6 

< * 
I 


I!i] 


'is 






« 




#£]:!:: •• 


iW 




|tt : 


jig 


jii 










Aft** 1 M 


1 




f!i: 






















fff 






h% 




rfll 




Hb 






impffl 




fe 


^ 


m*"v 


vi 


!i 




I' 

i . 








fff 


Mia 








!l:r 












s1b££ 


•?■ 








fStn 




lS 


Ifffig 


1:3 






















































































>>-20mA 






















rUfffffffH CASE TEMPERATUR 


:<t c > 


25 


•C: 



COLLECTOR -TO-EMITTER VOLTAGE (Vfe)— V 



92CS-2B»2« 



10' 

8 

. 6 

1 4 

5 2 


COLLECTOR SUPPLY VOLTAGE <V C C>"I25 V 
CASE TEMPERATURE (Tc)'25*C 






OUTY CYCLE ■ 1 % 
iBI-Ic'S. -IB2-IC/2 








































t, 




















t 6 
2 

6.1 




















l r 














>l 














'd 



















Fig. 7 - Typical output characteristics for 
all types. 



COLLECTOR CURRENT <I C )— A 

Fig. 8 - Typical saturated-switching-time 
characteristics for all types. 



i 

I" 

lie 


CASE TEMPERATURE (T C )'2S a C^:| 


































V~ 




















7 tff 


















































^ — 




:::: 




rut 


















P 


^?:':: 






















rF 


:::: 




?3 

ii' 














SSg^j} 


; Hi: 




:::: 


i-ff 
















t^ 




I :::! 






















■* 


•'vJi'-i* 




i :H: 






:rf: 










ll 






P 


^M 


' 








fe 


0!! 


r.':' 


IS 












Ife 


r~ 


?.~: 




T Hff 






::a 



COLLECTOR CURRENT (Ic>— A 

Fig. 5 - Typical collector-to-emitter 
saturation-voltage character- 
istics for all types. 



1000 

4 6 

J_ * 

B 2 
p 100 
















f -IMHz 






















EMITTER 


OPEN 
















































































































S e 

4 

t> 4 

5 2 
O 

10 



























































































































COLLECTOR-TO-BASE VOLTAGE (V C B>— V 

Fig. 6 - Typical output capacitance for 
all types. 




025 0.5 0.75 
BASE-TO-EMITTER VOLTAGE <Vbe>— V 

92CS-26S25 

Fig. 9 - Typical transfer characteristics 
for all types. 



214 



POWER TRANSISTORS 



High-Current, High-Power, High-Speed N-P-N 
Power Transistors 



The RCA-2N6326 and 2N6327 are epitaxial- 
base silicon n-p-n transistors intended for a 
wide variety of high-power, high-current 
applications, such as power-switching circuits, 
driver and output stages for series and shunt 



regulators, dc-to-dc converters, inverters, and 
solenoid (hammer)/relay drivers. 
These devices differ in maximum voltage 
ratings. They are supplied in JEDEC TO- 
204MA hermetic steel packages. 



2N6326, 2N6327 

Features: 

■ Specification for hpg and V CE (sat) up to 30 A 

■ Current gain bandwidth product 
f T - 3 MHz (min.) at 1 A 

■ Low saturation voltage with high beta 

■ High dissipation capability 

■ 200 mJ Eg/|, characteristic 



MAXIMUM RATINGS, Absolute-Maximum Values: 

2N6326 2N6327 

*V CB » 80 

*V CE0 (sus) 60 80 

* v EBO 5 

*'c 30 

*'CM «° 

*I B 10_ 

■bm 15 

*P T 

At T c < 25°C 200 

AtT c > 25°C .... Derate linearly 1.15 

See Figs. 1 and 2 

*T stg ,Tj 65to200 

At distance > 1/32 in. (0.8 mm) from 

seating plane for 10 s max 230 

* In accordance with JEDEC registration data format JS-6 RDF-2. 



TERMINAL DESIGNATIONS 



V 
V 
V 
A 
A 
A 
A 

W 
W/°C 

°C 



°C 




COLLECTOR- TO-EMITTER VOLTAGE (V CE )-V 

92CS- 29845 

Fig. 1 - Maximum operating areas for 2N6326 and 2N6327. 




JEDEC TO-204MA 



NOTE: CURRENT DERATING AT CONSTANT VOLTAGE 
APPLIES ONLY TO THE DISSIPATION-LIMITED PORTION . 
AND Is/k-LNITED PORTION OF MAXIMUM-OPERATING ; 
AREA-CURVES. DO NOT DERATE THE SPECIFIED VALUE ; 
FOR Ic MAX. 




SO 75 100 125 ISO 
CASE TEMPERATURE (Tc)— 'C 



Fig. 2 - Derating curves for 2N6326 and 2N6327. 



too; 

■fc • 

O 

Sioo- 

i : 

2 4 

i 2 

O C 
5 4 

* 

k 

S 2 
O 1 
































C4S f 1 1 






















«Sv1 


Ss- 


*• 


























rv5 


fr 






















k£ 5 * 




































































^v o * 










































































































































\ 






































































« 






p 




2 






■ 




2 


t 


1 


• 



COLLECTOR CURRENT (t c )-A 



100 



92CS-29B43 

Fig. 3 — Typical dc beta characteristics as a func- 
tion of collector current for 2N6326 and 
2N6327. 



215 



POWER TRANSISTORS 



2N6326, 2N6327 

ELECTRICAL CHARACTERISTICS, At Case Temperature (T c ) = 25°C 
Unless Otherwise Specified 



CHARAC- 
TERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6326 


2N6327 


VCE 


V BE 


'c 


■b 


Min. 


Max. 


Min. 


Max. 


'CES 


60 
80 








- 


0.5 


- 


0.5 


mA 


'CES 
T c = 150°C 


30 
40 








_ 


5 


— 


5 


'CEO 


30 
40 








— 


1 


— 


1 


'ebo 




-5 






- 


0.5 


- 


0.5 


"FE 


4 
4 
4 




5 a 
15 a 
30 a 




25 
12 
6 


30 


25 
12 
6 


30 




V CE0 (sus) 






0.03 




60 


- 


80 


- 


V 


V B E 


4 
4 




15 a 
30 a 




— 


2 

4 


— 


2 

4 


V CE (sat) 






15 a 
30 a 


2 
7.5 


- 


1.5 
3 


— 


1.5 
3 


's/b 
t p =1 s 
nonrep. 


20 








10 


- 


10 


- 


A 


E S/b 
L= 125 /iH, 
R BE = 51 n 




-1.5 


10 




6.25 


- 


6.25 


- 


mJ 


L = 20mH, 
R BE = 100fi 







4.47 




200 


- 


200 


- 


l h fe| 
f = 1 MHz 


10 




1 




3 


- 


3 


- 




h fe 
f = 1 kHz 


10 




1 




30 


- 


30 


- 


ton 
l off 


v C c = 

30 




15 
15 


2 
2 b 


0.45 (Typ.) 
0.9 (Typ.) 


0.45 (Typ.) 
0.9 (Typ.) 


Ms 


R 0JC 


20 




5 




- | 0.875 


- | 0.875 


°C/W 



*ln accordance with JEOEC registration data format JS-6 RDF-2. 
a Pulsed; pulse duration = 300 tis, duty factor = 1 .8%. 



1 

e 

6 

4. 

i " 


COLLECTOR SUPPLY VOLTAGE (Vfce)-30V 










IC/lB'IO 


























, r 








































S « 

% • 

2 * 
UJ z 

a 
0.01 














































'd 
































































9 


1 




2 


4 




8 KX 



COLLECTOR CURRENT (Ic)— A 

Fig. 4 — Typical delay-time and rise-time 
characteristics as a function of 
collector current for 2N6326 
and2N6327. 



10 
X 6 

J- 4 

s 

4i 2 

C 1 
o 8 


COLLECTOR SUPPLY VOLTAGE (Vfcc)-SOV 








I8|— iBa 
IC/lB'IO 
CASE TEMPERATURE (T C ).25'C 








































*JlJ 








































,, 


















£ 






















£ 2 
O.I 














































Z 






> 1 




>. 


1 


s 


> K> 



COLLECTOR CURRENT (I c )— A 

Fig. 5 — Typical storage-time and fall-time 
characteristics as a function of 
collector current for 2N6326 
and2N6327. 



0| 





MLLECTOR-TO-EMITTER VOLTAGE ' v CE'' 4v ftf}ttf}tttffitffl 


30 






1 1 ,. 'Ul i/l fn Itlllllt rtTTrn 


< 25 


JIlilM^fK 






M 


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IIIIIIIIIIIIH lllft^lllllllllllllllllllilllilllllllllllllllllilllllll 


a io 


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5 






05 I 1.5 

BASE-TO-EMITTER VOLTAGE !VbE>~ 



0.2 0.4 0.6 0.8 
COLLECTOR-TO-EMITTER SATURATION VOLTAGE [v^ltcO] — V 



Fig. 6 — Typical transfer characteristics for 
2N6326 and 2N6327. 



Fig. 7 — Typical saturation voltage characteristics for 
for 2N6326 and 2N6327. 



216 



POWER TRANSISTORS 



2N6383-2N6385, 2N6055, 2N6056, RCA1000, RCA1001 

8- and 10-Ampere N-P-N Darlington Power Transistors 



For Use as Output Devices in Switching and Amplifier Applications 
40-60-80 Volts, 90-1 00 Watts 



The RCA devices are monolithic n-p-n 
silicon Darlington transistors designed 
for low- and medium-frequency power 
applications. The double epitaxial con- 
struction of these devices provides good 
forward and reverse second-breakdown 
capability; their high gain makes it pos- 
sible for them to be driven directly from 
integrated circuits. 



< 



Schematic diagram for 
all types. 



Features: 

■ Operation from IC without predriver 

■ Low leakage at high temperature 

■ High reverse-second-breakdown cap- 
ability 

Applications: 

■ Power switching 

■ Audio amplifiers 

■ Series and shunt regulators 

■ Hammer drivers 



MAXIMUM RATINGS, Absolute-Maximum Values: 

2N6385 2N6384 2N6383 2N6055 2N6056 RCA1000 RCA1001 



* v CBO 

Vcer(sus) 

R BE = 100 n 

* v CEO< sus ' 

V CEV< SUS ' 
V BE = -1.5V 

* V CEX 

V BE = -1.5V,R BB = 10012 

* v EBO 

*'C 

'cm 



*P T 

T C <25°C. 

T C >25°C 

* T stg. Tj. . . 



At distance > 1/32 in. (0.8 mm) from 
seating plane for 10 s max 



10 

15 

0.25 



16 
0.12 



• Derate linearly to 200°C 
65 to +200 



TERMINAL DESIGNATIONS 




JED EC TO-204MA 



*2N-Series types in accordance with JEDEC registration data format JS-6 RDF-2. 




:». "rit « 's r. :t:i::s:s::t:R:nir.in:twiaaiist::tii: 

§nsim,iMffi»tffl]ttiiHr!«ai - : N..'t,' t-e u 'M"iiiiiMh'"i" .(wmimisi'i:: 
mmm mmmmmimw: *.,% *n m ■\..Kinmm^wmmm 




468. 2 4 6 8 

COLLECTOR-TO-EMITTER VOLTAGE (V CE )— V 

92C5-20692R 

Fig. 1 — Maximum operating area for 2N6383—2N6385. 







im 


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COLLECTOR^ TO -EMITTtH VO*,TA«t ( v C pt — V 

F/ff. 2 - Maximum operating area for 2N6383 - 2N6385 at T c = 100° C. 



217 



POWER TRANSISTORS 



2N6383-2N6385, 2N6055, 2N6056, RCA1000, RCA1001 

ELECTRICAL CHARACTERISTICS, At Case Temperature, Tq - 2S°C Unless Otherwise Specified 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N638S 


2N6384 


2N6383 


VCE 


v E p 


V„E 


ic 


'B 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


'CEO 


80 
60 
40 













- 


1 


- 


1 


- 


1 


mA 


"CEV 


80 
60 
40 




-1.5 
-1.5 
-1.6 






- 


0.3 


- 


0.3 


- 


0.3 


T C -150°C 


80 
60 
40 




-1.5 
-1.5 
-1.6 




- 


- 


3 


- 


3 


- 


3 


'ebo 




5 









_ 


5 


_ 


5 


- 


5 


mA 


v CEO (su, l 








0.28 





80 


- 


60 


- 


40 


- 


V 


Vcer(sus) 
R BE *100ft 








0.2» 




80 


_ 


60 


_ 


40 


_ 


Vcgylsus) 






-1.5 


0.2« 




80 


- 


60 


- 


40 


- 


»FE 


3 
3 






5» 
10" 




1000 
100 


20,000 


1000 
100 


20.000 


1000 
100 


20,000 




V B E 


3 
3 






5« 
10" 




- 


2.8 
4.5 


- 


2.8 
4.5 


- 


2.8 
4.5 


V 


V C g(s»t) 








5« 
10» 


0.01» 
0.1« 


- 


2 
3 


- 


2 
3 


- 


2 
3 


V 


v F 








-10 




-• 


4 


- 


4 


- 


4 


f - 1 kHz 


5 






1 




1000 


_ 


1000 


_ 


1000 


_ 




lhf.l 
f - 1 MHz 


5 






1 




20 


_ 


20 


_ 


20 


_ 




Cobo 
f - 1 MHz 


V C B 
-10 








l E -0 


- 


200 


.. _ 


200 


-■ 


200 


PF 


■s/b 

t-1 s, 
non rep. 


76 
66 
30 










0.22 
3.33 


- 


0.55 
3.33 


- 


3.33 


- 


A 


R0jc 












- 


1.75 


- 


1.75 


- 


1.75 


°C/W 



8 Pulsed: Pulse duration - 300 /Js, duty fector - 1.8%. 

* 2N-S*ries types in accordance with JEDEC registration data format JS-6 FtDF-2. 



100 

i 

* 4 
O 

S 
| 






























































































































































CASE-TEMPERATURE 
CHANGE (^4T C 1'50'C 






,,1 

8 \ 


\ 




















i 


\ 


"\ 


















J U50 


U25 # c\l00*C 


\ 


5» 












, 


i 


4 


I I 


' 4 






6 8 


' 5 






5 B m 



NUMBER OF THERMAL CYCLES 

Fig. 3- Thermal-cycling rating chart for 
2N6055-2N6056, 2N6383- 
2N6385. 



100 

8 

1 • 
I 4 

* 

o 
10 


































































































S v CASE-TEMPERATURE CHANGE 

X .aToWM'c 






— o 
















\\ 


















\ 














ISO'C , VZS'CVOO'C 


ys't 









NUMBER OF THERMAL CYCLES 

t?CS->999 

Fig. 4 - Thermal-cycling rating chart for 
RCA 1000. RCA 1001. 



s 6 
% 4 

2 io" 

J* 4 

i ' 

z « 

K) 2 


COLLECTOR-TO-EMITTER VOLTAGE (Vfcjl- JV 






































































































^^ 


" , «^- 




— 












~ 












> 


V 
















■ 


V 


% 






^ 


L, 














jft 


f\ 










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~£\ 














































^ 




























\\ 




























}y 





























i 


9 






»ii 



COLLECTOR CURRENT (I e l — A 



ttcs-iermn 



Fig. 5 - Typical dc beta characteristics 
for all types. 




BASE-TO-eMTTER VOLTAGE (V M I— V 



Fig. 6 - Typical input characteristics 

for 2N6383-2N6385, 2N60S5. 
2N60S6. 







CASE TMROWTURI (T C >'BVC | 










1 

s 


M 
14 

K> 












•to a* 






















UijA] 










BUos 






t 


4 * 


a 




» 







COLLECTOR-TO-EMITTER VOLTASE (Vc E >-V 

Fig. 7 - Typical output characteristics 
for 2N6383-2N6385, 2N60S5, 
2N60S6. 



































-» * 

* J 

I 
3 ,o» 

\ ! 

s 

1 K>* 
T t 

{■ 

2 














COLl^CTOR-TQrEWTTER VOLTAM (*fcr)-5* 































































































































































































































































































































































































FREQUENCY {()— MHl 



Fig. 8 - Typical small-signal gain for 
all types. 



218 



POWER TRANSISTORS 



2N6383-2N6385, 2N6055, 2N6056, RCA1000, RCA1001 



ELECTRICAL CHARACTERISTICS. At Case Temperature, Tc = 25°C Unless Otherwise Specified 





TEST CONDITIONS 


LIMITS 




DC 


DC 










CHARACTERISTIC 


VOLTAGE 
V 


CURRENT 
A 


2N60S5 


2N6056 


RCA1000 


RCA1001 


UNITS 


V C E 


VEB 


VBE 


ic 


■e 


'B 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 




30 










n 


_ 


0.5 


_ 


_ 


_ 


0.5 


_ 


_ 




'CEO 


40 













- 




- 


0.5 


- 




- 


0.5 


mA 


'CER 


60 












- 


- 


- 


- 


- 


1 


- 


- 




R BE = 1 kfi 


80 


























1 


mA 


'CER 


60 












- 


- 


- 


- 


- 


5 


- 


- 


R BE = 1 kfj 


80 


























5 




T c = 150°C 


































60 




-1.5 








_ 


0.5 
















'CEX 


80 




-1.5 








- 


- 


- 


0.5 


- 


- 


- 


- 




'CEX 


60 




-1.5 








- 


5 
















T C = 150°C 


80 




-1.5 








- 


- 


- 


5 


- 


- 


- 


- 




'EBO 




5 











- 


2 


- 


2 


- 


2 


- 


2 


mA 




3 






8^ 






100 


- 


100 


- 


- 


- 


- 


- 




hFE 


3 






4 a 






750 


18.000 


750 


18.000 


750 


- 


750 


- 






3 






3<» 






- 


- 


- 


- 


1000 


- 


1000 


- 




v (BR)CEO 








0.1 a 







- 


- 


- 


- 


60 


- 


80 


- 


V 


V CE0 (iu.) 








0.13 






603 


- 


803 


- 


- 


- 


- 


- 




V CER (susl 






























R BE = 100 Si 








0.1» 






60 s 


- 


803 


- 


- 


- 


- 


- 


V 


v CEX lsusl 






-1.5 


0.13 






603 


- 


803 


- 


- 


- 


- 


- 










3 a 




0.012 - 


- 


- 


- 


- 


2 


- 


2 




V CE (sat) 








43 




0.016 - 


2 


- 


2 


- 


- 


- 


- 


V 










83 




0.04 - 


- 


- 


- 


- 


4 


- 


4 












8 a 




0.08 - 


3 


- 


3 


- 


- 


- 


- 






3 






33 






_ 


_ 


_ 


_ 


_ 


2.5 


_ 


2.5 




v BE 


3 






43 






_ 


2.8 


_ 


2.8 


_ 


_ 


_ 


_ 


V 






























V BE (sat) 








8 a 




0.08 - 


4 


- 


4 


- 


- 


- 


- 




Ihfel 


3 






3 






4 




4 














f » 1 MHz 
































c obo 
































f = 0.1 MHz, 















- 


200 


- 


200 


- 


- 


- 


- 


pF 


V CB = 10V 
































h fe 


3 






3 






300 




300 














f = 1 kHz 
































'S/b 


33.3 












3 


- 


3 












A 




40 












- 


— 


2 


— 


— 


— 


— 


— 




non rep. 
































R0JC 














" 


1.75 


" 


1.75 


- 


1.94 


" 


1.94 


°C/W 



* In accordance with JEDEC registration data format JS-6 RC 
1 Pulsed: Pulse duration = 300 /is, duty factor = 2% 



s 

4 ' 
s 

ll 

g -2 3 

I 1 — ' 
g 2 
S 

i 






























WM 














Ipllllj, 


Sffias 














SSocrerMVjri-iooo 










































m 


00 ct 


=c 


SE 


TEMPERATURE g 
































































so'c'fft 



















2 4 6 6 to 12 

COLLECTOR CURRENT (I c l— A 

Fig. 9 - Typical saturation charac- 
teristics for 2N6055, 2N6056, 
RCA1000, RCA1001. 



13 

T 

S 10 

I 

a 3 





ffi»oJts*c+ 


130-C 


iUlOOO.iB'C 








11 1 i 1 I 1 1 1-lffilC "B ITORCED Hfc)»I0OO|-| 1 1 1 1 1 II 1 Hf 
1 1 1 1 1 1 1 1 JtH T c -I90*C 1 1 1 1 1 1 1 1 1 1 1 1 1 





COLLECTOR-TO-EMITTER SATURATION VOLTAGE [v ct (toll] — V 
92CS-206M 

Fig. 10 - Typical saturation characteristics 
for 2N6383-2N6385. 



T 


COLLECTOR-TO-EMITTER VOLTASE (VcE>- 3 V 




















£ io 

° 7.5 

u 5 








p 


ti 


^r£ 




ol j I I I J - 




+[i 




<■'-., 




2.9 






: TFH- 


mi' 






mill! : 



BASE-TO-EMITTER V0LTA6E (V BE ) V 

Fig. 1 1 - Typical transfer characteristics 
for 2N6383-2N6385, 2N6055, 
2N6056. 



33 
3 
23 

I * 

X 

13 

0.5 



COLLECTOR SUPPLY VOLTASE <V CC ).20V 
IB, ■-I B7 'IC' 500 . T C'2 5 'C 










































.If 



































































J^ 


















1L. 







COLLECTOR CURRENT II C ) — A -hmori 

Fig. 12- Typical saturated switching-time 

characteristics for 2N6383-2N6385, 
2N6055, 2N6056. 



219 



POWER TRANSISTORS 



2N6383-2N6385, 2N6055, 2N6056, RCA1000, RCA1001 




4 6 

COLLECTOR CURRENT (I/O —A 

^ v 92C3-20M»RI 

Fig. 13 — Maximum operating areas for 2N6055 and 2N6056. 



220 



POWER TRANSISTORS 



2N6386, 2N6387, 2N6388 
8- and 10-Ampere N-P-N Darlington Power Transistors 



60-80-100 Volts, 65 Watts 

These RCA devices are monolithic n-p-n 
silicon Darlington transistors designed for 
low- and medium-frequency power appli- 
cations. The double epitaxial construction 
of these transistors provides good forward 
and reverse second-breakdown capability; 
their high gain makes it possible for them to 
be driven directly from integrated circuits. 
These devices are supplied in the JEDEC TO- 
220AB straight-lead version of the VERSA- 
WATT package. Optional lead configurations 
are available upon request. For information, 
contact your nearest RCA Sales Office. 

The 2N6386 is complementary to the 
RCA8203 and the 2N6666, the 2N6387 
is complementary to the RCA8203A and 



the 2N6667, and the 2N6388 is comple- 
mentary to the RCA8203B and the 
2N6668. 




Fig. 1 - Schematic diagram for all types. 



MAXIMUM RATINGS, Absolute-Maximum Values: 



VCBO • 
Vcer(sus) 
RBE = 100 ft 

VCEO<sus) • • 
VcEV(sus) 

Vbe = -1.5V 
VEBO • • ■ 

ic 



'CM 

IB 

PT 

Tc<25°C 

Tc>25°C 

r stg» Tj 

ri_ At distances > 1/8 in. (3.1 7 mm) 
from case for 10 s max 



2N6386 

40 

40 
40 

40 
5 
8 
15 
U25 



65 



2N6387 

60 

60 
60 

60 
5 
10 
15 
0.25 

65 



2N6388 
80 

80 
80 

80 
5 
10 
15 
0.25 

65 



Derate linearly to 150 C 
-65 to +150 



235 



V 
V 

V 
V 
A 
A 
A 

W 

°C 

°C 



Features: 

■ Operates from IC without predriver 

■ Low leakage at high temperature 

■ High reverse second-breakdown capability 
Applications: 

■ Power switching 

■ Hammer drives 

■ Series and shunt regulators 

■ Audio amplifiers 

TERMINAL DESIGNATIONS 




92CS-275I9 

BOTTOM VIEW 
JEDEC TO-220AB 



u l0 " 


COLLECTOR-TO-EMITTER VOLTA6E (V rr ). 3V 








































































































§1 " t 

S 5 z 

"■ loj 
o 6 

a 
io* 




-^ 








^ 














































^ 




$\ 


H* 
























































































































0. 


2 


* 


b 


• 












K 


) 2 








100 



2N- Series types in accordance with JEDEC registration data format JS-6 RDF-2. 



COLLECTOR CURRENT (I c > — A 

Fig. 2 — Typical dc beta characteristics 
for 2N6386, 2N6387, and 
2N6388. 




4 6 8- 2 4 6 8 . 2 4 6 8 

1U K>* lO 5 K 

NUMBER OF THERMAL CYCLES 

92CS-26424 

Fig. 3 — Thermal-cycling rating chart for 
2N6386, 2N6387. and 2N638& 



■J 

° IO ! 

1 io 2 

% • 

2 
IO 


















































COLLECTOR-TO-EMITTER VOLTAGE (V CE )'5V 










CASE TEMPERATURE (Ti-)-2S*C 





















































































































































































































































































































































FREQUENCY (f) — MH! 



Fig. 4 — Typical small-signal gain for 
all types. 







CASE T 


EMPER 


ATURE 1T C )-2»'C [fttttttllllllllllll 




T 


w 


















£ 


14 






B^ecuRREHLoSJ^ 




§ 


12 








IIIIIIIIIII'o^atS 




i 

i 


IO 

6 

a 

2 








lllllllllll»»4ffl 

IllllllllllliJaUm 


Ba9§ 







2 




4 * 


t IO 12 


H 



COLLECTOR-TO-EMITTER VOLTA0E (V CE I-V 

Fig. S — Typical output characteristics for 
2N6386, 2N6387, and 2N6388. 



221 



POWER TRANSISTORS 



2N6386, 2N6387, 2N6388 

ELECTRICAL CHARACTERISTICS,^ Case Temperature (Tq) =2S°C Unless Otherwise Specified 



CHARACTERISTIC 
SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6386 


2N6387 


2N6388 


V C E 


vbe 


■c 


IB 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


•ceo 


80 
60 
40 











- 


1 


- 


1 


- 


1 


mA 


ICEV 


80 
60 
40 


-1.5 
-1.5 
-1.5 






- 


0.3 


- 


0.3 


- 


0.3 


T C =125°C 


80 
60 
40 


-1.5 
-1.5 
-1.5 






- 


3 


- 


3 


- 


3 


>EBO 




5 







- 


5 


- 


5 


- 


5 


mA 


v CEO< sus ) 






0.2a 





40 


- 


60 


- 


80 


- 


V 


VCER(s us > 

rbe = 100 n 






0.2a 




40 


- 


60 


- 


80 


- 


V CEV( SUS > 




-1.5 


0.2a 




40 


- 


60 


- 


80 


- 


*FE 


3 
3 
3 
3 




3a 
5a 
8a 
10a 




1000 
100 


20,000 


1000 
100 


20,000 


1000 
100 


20,000 




V B E 


3 
3 
3 
3 




3a 
5a 
8a 
10a 




- 


2.8 
4.5 


- 


2.8 
4.5 


- 


2.8 
4.5 


V 


VcE(sat) 






3a 
5a 
8a 
10a 


0.006a 
0.01 a 
0.08a 
0.1a 


- 


2 
3 


- 


2 
3 


- 


2 
3 


V 


v F 






-8a 
-10a 




- 


4 


- 


4 


— 


4 


V 


h fe 
f =1 kHz 


5 




1 




1000 




1000 




1000 






f = 1 MHz 


5 




1 




20 




20 


_ 


20 


_ 




Cob 
V C B = 10V. 

f = 1 MHz 










- 


200 


- 


200 


- 


200 


pF 


'S/b 

t = 1 s, honrep. 


25 








2.6 


_ 


2.6 


_ 


2.6 


_ 


A 


R0JC 










- 


1.92 


- 


1.92 


— 


1.92 


OC/W 



a Pulsed: Pulse duration « 300 u.s, duty factor = 1 .8%. 

* In accordance with JEDEC registration data format JS-6 RDF-: 



15 








































S 10 


1 1 1 1 1 1 1 1 I//1 U4i '°°° 


,25'C 






J 5 


yPic/'B 


(FORCED hFE'" 
T C .I25'C 


OOP 






















































in inn mitt 





COLLECTOR-TO-EMITTER SATURATION VOLTAGE [v CE I sot )J — V 
9ZCS-20S94 

Fig. 6 — Typical saturation characteristics for 
2N6386, 2N6387, and 2N6388. 

















T 




















"^125 








v^ 




£ l0 






±^>Wt> 


K l 1 1 1 1 1 1 1" 






Ftftpff- 






° 7.5 


1 1 1 1 1 1 1 II 1 1 1 1 1 l^ .fcrfllf-nilllllllllllll - 


u 3 

2.5 










nrtlfi: 















BASE -TO- EMITTER VOLTAGE (VeE> v 

92CS-Z070IRI 

Fig. 7 — Typical transfer characteristics tor 
2N6386, 2N6387, and 2N6388. 



35 
3 

2.3 

i « 
X 

IS 
0.5 


COLLECTOR SUPPLY VOLTAGE (V CC )-20V 
I B| --182 ■Ic'SOO,T c -25'C 






































Jf 


































/ 










«*" 


^ 












*^« 


~— 


•~~. 


Jt, 
















u. 


" 


1 0. 




2 








« 




• * H 



COLLECTOR CURRENT (I c > — A -i 8 9S< 

Fig. 8 — Typical saturated switching-time 
characteristics for 2N6386, 
2N6387, and 2N6388. 



222. 



POWER TRANSISTORS 



2N6386, 2N6387, 2N6388 




COLLECTOR-TO-EMITTER VOLTAGE (V C E> — V 



Fig. 9 - Maximum operating areas for 2N6386, 2N6387, and 2N6388 at T c = 25 C. 



4 
2 

10 
8 
6 

4 

< 

1 2 

U 
H 

£ i 

2 8 

3 6 

g 4 

i- 

o 
kj 

1 2 
O 

o 

0.1 
8 
6 

4 

2 
0.01 


CASE TEM 


PERATURE (T C )«l00*CiJ;; 


iHiiiiiHililil^iiilii-ltlv 


IJIIP 


2N6387, - 
2N6388I: 


^^,|„„|.„,[||||i|,[ l ,,||,, T ,|,,| l |ii 
*~ PULSE OPERATION*^ 


«s«IC (MAX.) 

-—PULSED (ALL TYPES)-4- 


■ N • r ■ 










«•■ (* ■*■ ■» 




::;l:-.. 


: 1 ::■ 


-t 1 1 : ; 














3* 




^^' 


JsP^ 




^jp 












i i ;rt 








, 




B 


tp 


!^ 




Sri? 


;:^b ; 


ec; 


r_=±i:i 






«s 


Sri? 






w 


lis 


N6386< 




&Sfei- 


NiNc^ 


tJtJiJt 


T 


TR* 


n^r 


"iff 








•«:|. 


JSO 




&mt 


1= 




i|! ili 




!-:: 








I C (MAX. 


: 


*- 1 






T^ """ft -\ 


sliljtl 






□ 1 






CO 

is 


YTI 


IU0 


os_ 


-J-ifi 


SSi 




1 13 












^IlliU: 




'i : : 








*lPl 












5:- 






iiH 




























V'---W& 












2? 




— is/n-i 


jmitedA 










is 








*F0R SINGLE i | 

. M0NREPET1TIVE i i 

PULSE ? : 


^jfflH 




t-m, 


It 


-h — 1 


h"**^} 
























T'- 


j si; 


- = *} 


HI 












ii 










Ml 






NpI 


















iili 


V CE0 (MAX.)-40\ 

V^(IMX>60V 


M2N6386)|j| 
(2N6387')1 1 






V C E0<MAX.).80V(2N6388) 






si 




BHl 


"tro 


■ij:: in ^ft 

















































6 8 2 4 6 8 

10 100 

COLLECTOR-TO-EMITTER VOLTAGE (V CE ) — V 



Fig. 10 - Maximum operating areas for 2N6386. 2N6387, and 2N6388 at T c = 100 C. 



223 



POWER TRANSISTORS . 



2N6420, 2N6421, 2N6422, 2N6423 

High-Voltage Medium- Power Silicon P-N-P Transistors 



For High-Speed Switching and Linear-Amplifier Applications 



The RCA-2N6420, 2N6421, 2N6422, and 
2N6423 are epitaxial silicon p-n-p power 
transistors with high-voltage ratings and 
fast switching speeds. Typical applications 
for these transistors include high-voltage 



operational amplifiers, switching regulators, 
converters, inverters, deflection stages and 
high-fidelity amplifiers. 

These types are supplied in steel JEDEC 
TO-213MA hermetic packages. 



Features: 

■ High voltage ratings: 

V CE0 (sus) = -175 V max. (2N6420) 
= -250 V max. (2N6421) 
= -300 V max. (2N6422) 
= -300 V max. (2N6423) 

■ Large safe-operating area 

■ Thermal-cycling rating 



MAXIMUM RATINGS, Absolute-Maximum Values: 



TERMINAL DESIGNATIONS 



2N6420 2N6421 2N6422 2N6423 



* V CB0 -250 

V CE0 ($u$) -175 

' V EBO 

* 'C ~ 1 

* 'CM 

* |b • • • 

T C <100°C,V CE <50V 

* T c < 25°C, V CE <40V 

^T c < 25°C, V CE >40V 

*T C > 25°C,V CE >40V 

* T stg ,*Tj 

* T >- 

At distances ^1/32 in. (0.8 mm) from case 

for 10 s max 

* In accordance with JEDEC registration data. 



-375 
-250 



-500 
-300 



-500 
-300 



-5 

-1 



20 

35 

See Fig. 1 
See Figs. 1 S3 



-65 to +200 




4 6 8 1 2 4 6 8.L- 2 

COLLECTOR-TO-EMITTER VOLTAGE(V CE )- V 

92CM- 30343 

o 
Fig. 1 — Maximum operating areas for all types at Tq = 25 C. 




JEDEC TO-213MA 



-K>8 

6 
4 

< 2 

I-.. 

o 8 

s • 

at 

§ 2 

"-0.I 

£ ' 

u 4 

8 * 

• 
4 


































(CURVE MUST BE DERATED LINEARLY 






























I I 


LI*. I 1.1. 
















X C MAX. | 






^Spfc. 1 




























CM 






























N^ 




































































4 
































































































V«i L 






























zvo 






























i\ 










V CE0 MAX "ITS V (2N6420I 
— V CE0 MAX.<-250V(2N642I) 


"ill 
























_ V CE0 MAX. — 300V (2N6422,2N6423)=±±f 












- 




! • 




-» 


! 4 4 


-100 




4 • 


1 
000 



COLLECTOR-TO-EMITTER V0LTA9E ( V CE )-V 

92CS- 50J42 

Fig. 2 — Maximum operating areas for all 
types, at T c = 100 C. 



NOTE: CURRENT DERATING AT CONSTANT VOLTA0C 
APPLIES ONLY TO THE DISSIPATION- LIMITED PORTION 
AND I s /t-LMITED PORTION OF MAXIMUM-OPERATINO- 
AREA CURVES DO NOT DERATE THE SPECIFIED 
VALUE FOR Ic MAX. 




BO ITS ZOO 



CASE TEMPERATURE (Tc)-t 

Fig. 3 — Derating curves tor all types. 



224 



POWER TRANSISTORS 



2N6420, 2N6421, 2N6422, 2N6423 



ELECTRICAL CHARACTERISTICS, At Case Temperature (T C )-25°C 

Unless Otherwise Specified 





CHARAC- 
TERISTIC 


TEST CONDITIONS 


LIMITS 


Units 




VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6420 


2N6421 
2N6422 


2N6423 




V C E 


V B E 


•c 


■b 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


* 


'ceo 


-150 








- 


-10 


- 


-5 


- 


-5 


mA 


> 


'CEX 
2N6421 

2N6422 


-225 
-340 
-450 
-450 


1.5 
1.5 
1.5 
1.5 






- 


-1 


- 


-1 
-1 


- 


-2 


• 


ICEX 
Tc=15<fC 


-225 
-300 


1.5 
1.5 






- 


-3 


- 


-3 


- 


-5 


• 


'EBO 




6 







- 


-5 


- 


-0.5 


- 


-0.5 


* 

* 
• 


hFE 


-10 
-10 

-2 
-10 

-2 
-10 




-0.1 a 

-0.5a 

-0.75* 

-0.75* 

-1« 

-1« 




40 
40 

10 


200 


40 

8 
25 


80 
100 


40 

10 
30 


100 
150 






v B e 


-10 




-1« 




- 


-1.4 


- 


-1.4 


- 


-1.4 


V 


* 


V BE (sat) 






-0.75a 
-1« 


-0.075 
-0.1 


- 


-1.4 


- 


-1.4 


-1.8 


- 




V CE (sat) 






-0.75a 
-ia 


-0.075 
-0.125 


- 


-5 


_ 


-0.75 


_ 


-1 


* 


V CE0 (sus)b 
2N6421 
2N6422 






-0.05a 
-0.05a 
-0.05a 







-175 


- 


-250 
-300 


; 


-300 


- 




's/b 


-100 








-0.15 


- 


-0.15 


- 


-0.15 


- 


A 


* 
* 


Ihfel 
f = 5MHz 
f = 1 kHz 


-10 
-30 




-0.2 
-0.1 




2 
25 


350 


2 


- 


3 


- 






c obo 
V CB =10V 
f=1MHz 











- 


180 


- 


180 


- 


180 


pF 


* 


tr c 






-0.75 
-1 


-0.075<» 
-0.1«i 


- 





_ 


3 


_ 


0.5 




* 


h C 






-0.75 
-1 


-0.075* 
-0.1«l 


- 


- 


- 


4 


_ 


6 


MS 


• 


tf c 






-0.75 
-1 


-0.075«1 
-0.1<* 


- 


_ 


- 


3 


— 


3 




R 0JC 


-10 





-1 




- 


M- 


5 


- 


5 


"C/W 



* In accordance with JEDEC registration data. 
•Pul»«d: pulse duration - 300 m*. duty factor < 2%. 
■CAUTION: The sustaining voltage V CE q(sus) 
MUST NOT be measured on a curve tracer. 



cv cc --200V,t p -20|i* 



d-| 



B 1 " 'B 2 





















I I I I 














* 

I 

7- 2 ■ 

z 


s T 


j MAX.- 200* 

1 I 


c 














I ^S^ 


















5 I0-- 








<* 


„' 














5» * 










^v 1 

























p^'ca. 












* 



iV 


\% 








\^>. 


C 










MX 


|\ 














a 


10 


A 




8 


"lio 


2 * 


I 


'lOOO 


I 



NUMBER OF THERMAL CYCLES (THOUSANDS) 



Fig. 4 - Thermal-cycling rating chart for all types. 



s 

i : 

i *■ 


COLLECTOR 


-Tr 


-EMITTER VOLTAGE (Vrpl 


— 5V 










l Ml l 
















CASE TEMPERATURE <T C )' ISO'C 






















M 




N 








T C -2S'C 






\ 






























s 
































^ 


\ 






























\\ 






























\ 






























^ 










X 1 
























l' 












































! 


i ••„ 























COLLECTOR CURRENT (Ic)— A 



Fig. S — Typical dc beta characteristics for all types. 



2 40 

1 3, 


COLLECTOR- TO-EMITTER VOLTAOE (VCE>— >OV 
CASE TEMPERATURE (Tc)'ZS*C 




































E 30 
1 M 

i 20 

l ] 

1 . 

9 


























































































































































































' 






S • 








B 6 













COLLECTOR CURRENT (I c I- A 



Fig. 6 — Typical gain-bandwidth product for all types. 




O -OS -I -13 -2 

COLLECTOR CURRENT U c l— A « a-l, *» 

Fig. 7 — Typical saturation-voltage characteristics 
for all types. 



.225 



POWER TRANSISTORS . 



2N6420, 2N6421, 2N6422, 2N6423 





COLLECTOR- TO-EMITTER VOLTMC (V C (l a -9V {$} 










1 






tf -* 






i 


Wf 1 fl^B 




1 "'■' 


ft rtl.tilii *^""rfr fitftT iTTTttt.ifll 1 If Hill llfiftll FT I II ^^H 

ji 1 M 

PJalll 




-O.S 


lf*Mlllllllllllllllllllllllllllllllllllll^ffl 





MSE-TO- EMITTER VOLTAOE IV K >— V MC ».|$tT4 

Fig. 8 - Typical transfer characteristics for all types. 



. t 
* 

= 1.1 


wtrirSS mbtc' •*& *ut»/. 

COLLECTOR WPPLV VOUMt t¥ce)--»OOV 
CMC TEMPERATURE (Tcl>tS* C 



























collector current ciei-* 



ttet-i»iiT«i 



Fig. 9 - Typical storage time characteristic for 
all types. 




COLLECTOR CURRENT (If)—* 

MCS-I9MOK2 

Fig. 10 — Typical turn-on time and fall-time 
characteristics for all types. 



226 



POWER TRANSISTORS 



2N6477, 2N6478, RCA3441, RCA6263 

Hometaxial-Base, Medium-Power Silicon 
N-P-N Transistors 



Designed for Medium-Power Linear and Switching Service 
in Consumer, Automotive, and Industrial Applications 



Features: 

■ Maximum safe-area-of-operation curves 

■ Low saturation voltages 

■ High dissipation ratings 

■ Thermal-cycling rating curves 



RCA 2N6477 and 2N6478 are hometaxial-base silicon n-p-n 
transistors intended for a wide variety of medium-to-high 
power, high-voltage applications. These devices, which are 
voltage extensions of the 2N5298 family, are especially useful 
in vertical output stages in color and black-and-white TV. The 
units differ in voltage ratings and in the currents at which para- 
meters are controlled. 

RCA3441 and RCA6263 are silicon n-p-n transistors intended 
for a wide variety of high-current applications. The hometaxial- 
base construction of these devices renders them highly resistant 



MAXIMUM RATINGS. Absolute Maximum Values: 

COLLECTOR TO BASE VOLTAGE 

COLLECTOR TO EMITTER SUSTAINING VOLTAGE: 

With external baseto-emitter resistance (Rr E ) = 100 SI 

With base open 

With base reverse biased V BE - - 1 5 V 
EMITTER TO BASE VOLTAGE 
CONTINUOUS COLLECTOR CURRENT 
PEAK COLLECTOR CURRENT 
CONTINUOUS BASE CURRENT 
TRANSISTOR DISSIPATION: 

At case temperatures up to 25°C 

At case temperatures above 2S°C 
TEMPERATURE RANGE 

Storage and Operating (Junctionl 
PIN TEMPERATURE (During SolderingI 

At distances > 1/32 in (0 8 mml Irom seating plane for 



to second breakdown over a wide range of operating conditions. 
TheVERSAWATTcasehasa proven thermal-cycling capability. 
This capability is assured by real-time quality controls in our 
manufacturing locations. All these types are supplied 
in the JEDEC TO-220AB straight-lead version of the 
package. They are also available on special order in a variety of 
lead-form configurations. Two popular variations have leads 
formed to fit TO-66 sockets (specify formed lead No. 6201) 
or printed-circuit boards (specify formed lead No. 6207). 
Detailed information on these and other VERSAWATT outlines 
may be obtained from your RCA Sales Office. 



Applications: 

■ Series and shunt regulators 

■ High-fidelity amplifiers 

■ Power switching circuits 

■ Solenoid drivers 

■ Vertical output stages in color 
andB/WTV 



TERMINAL DESIGNATIONS 



2W8477 2N8478 RCA6263 RCA3441 



v CBO 

V CER<» 
v CEO'« 
V CEV („ 

v EBO 




BOTTOM VIEW 



JEDEC TO-220AB 



Derate Uneerlv to ISO C 
1.8 1.8 

Derate linearly at 0.0144 



W/*C 
°C 



* 2N- Series types in accordance with JEDEC registration data format JS-6 RDF-2. 



ELECTRICAL CHARACTERISTICS. At Case Temperature (T c ) = 2S°C unless otherwise specified 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6477 


2N6478 


V CE 


V BE 


'c 


>B 


MIN. 


MAX. 


MIN. 


MAX. 


Collector-Cutoff Current: 
With base open 


'CEO 


80 
100 










- 


2 


- 


2 


mA 


With base-emitter 
junction reverse-biased 


'CEV 


130 
150 


-1.5 
-1.5 






- 


2 


- 


2 


AtT c - 150°C 


'CEV 


120 
140 


-1.5 
-1.5 






- 


10 


- 


10 


Emitter-Cutoff Current 


'ebo 




-5 







- 


2 


- 


2 


mA 


Collector-to-Emitter Sustaining 
Voltage: 
With base open 


V CE0 (sus) 






0.1* 





120 


- 


140 


- 


V 


With external base-to-emitter 
resistance (Rbe* = 100 $2 


V CER (sus) 






0.1* 




130 


- 


150 


- 


With base-emitter junction 
reverse-biased 


V CEV (susl 




-1.5 


0.1* 




140 


- 


160 


- 


DC Forward-Current Transfer 
Ratio 


"FE 


4 

4 




ie 
2.5* 




25 
5 


150 


25 
5 


150 




Collector-to-Emitter 
Saturation Voltage 


V CE (sat) 






ia 
2.5e 


0.1 
0.5 


- 


1 
2 


- 


1 
2 


V 


Base-to-Emitter Voltage 


V BE 


4 
4 




1» 
2.5* 




: 


1.8 
3 


_ 


1.8 
3 


V 


Magnitude of Common-Emitter, 
Small-Signal, Short-Circuit 
Forward-Current Transfer Ratio: 
f = 40 kHz 


Kl 


4 




0.5 




5 


- 


5 


- 




Gain-Bandwidth Product 


f T 


4 




0.5 




200 


- 


200 


- 


kHz 


Common-Emitter, Small-Signal, 
Short-Circuit Forward-Current 
Transfer Ratio: 
f - 1 kHz 


"fe 


4 




0.1 




25 


" 


25 


- 




Thermal Resistance: 
Junction-to-Case 


1 R 0JC 










_ 


2.5 


_ 


2.5 


°C/W 


Junction-to-Ambient 1 n 8jC I 








_ 


70 


~ 


70 



100, 

* 
1 * 

I » 

o 
z 

1 






















































S*. 



















V^ 




<'i 










-8 


L 






sfc 










\ 


\ \ 






s, 








\ 


















\\ 






>Kj 


O. 






^ 


\ 


Va 


V 


5 ^V 









NUMBER OF THERMAL CYCLES 

Fig. 1 - Thermal-cycling rating chart for 
2N6477, 2N6478. 



100 

* 

% 10- 

£ e 




























































JA 


\5V_ 










*■■*/ \ 




w, 
























\ \ 


m 










\ \ 


\\\ 








l\ i \ 


V 


\\, 


VoV^ 


^ 



* In accordance with JEDEC registration data format (JS-6 RDF-2). * Pulsed: Pulse duration - 300 us, duty factor » 1 .8%. 

CAUTION: The sustaining voltage V ce q(sui), V CER (susl, and V CEU (sue) MUST NOT be measured on a curve tracer. 



Fig. 2 - Thermal-cycling rating chart for 
RCA3441, RCA6263. 



227 



POWER TRANSISTORS 



2N6477, 2N6478, RCA3441, RCA6263 



ELECTRICAL CHARACTERISTICS, At Case Temperature <T C ) 


• 2S°C unless otherwise specified 






CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vde 


CURRENT 
Adc 


RCA62S3 


RCA3441 


V C E 


V EB 


v B e 


'c 


•r 


MIN. 


MAX. 


MIN. 


MAX. 


Collactor-Cutoff Currant: 
With base opan 


'CEO 


100 
120 












- 


5 


" . 


5 


mA 


With base emitter 

iunetion reverai-oiased 


*CEX 


120 
140 




-1.S 
-1.5 






- 


5 


- 


5 


At T c - 150°C 


'CEX 


120 
140 




-15 

-1.5 






- 


10 


- 


10 


Emitter-Cutoff Currtnt 


*EBO 




5 









- 


2 


- 


2 


mA 


Collector-to-Emitter 
Sustaining Voltage: 
With but span 


V CE0 («lt) 








0.1 a 





120 


- 


140 


" 


V 


With external ban-to- 
amittar ratinanca 
(R BE l-toon 


V CER (sus) 








0.1" 




130 


" 


150 


" 


With t»M-*mittir junction 
ravartt-biaitd 


V CEV ltut) 






-1.5 


0.1 a 




140 


" 


160 


" 


DC Forwerd-Current 
Tramlar Ratio 


h FE 


4 






0.5" 




20 


150 


20 


150 




Collector-to-Emitter 
Saturation Voltage 


V CE lsat> 








0.5" 


0.05" 


" 


1.2 


" 


1.2 


V 


Base-to-Emitter Voltaga 


V BE 


4 






0.5" 




- 


2 


- 


2 


V 


Gain-Bandwidth Product 


*T 


4 






0.2 




200 


- 


200 


- 


kHz 


Common-Emitter, 
Small-Signal, Short- 
Circuit Forward- 
Currant Trantfar Ratio 
H - 1 kH«> 


h f. 


4 






0.1 




25 


" 


25 


- 




Forwar0-8ias Sacond 
Braakdown Collactor 
Currant 5 It |> 1 1) 


's/b 


120 










0.3 


- 


0.3 


- 


A 


Tharmal Resistance: 
Junction- to-Gaia 


"»JC 












- 


3.5 


_ 


3.5 


°C/W 


Junction- to-Ambiant 


R «JA 












- 


70 


- 


70 



C0LLECT0d-T0-EMITT£R VOLTACE (V C E>*«V 
CASE TEMPERATURE (T C )'25*C 












! 1 


1.2 
3 

X 

i '" 

£ 0.6 

| 0.4 

i 0.2 
3 






































! 




































[ 








































































■ i 




















































































6 


a 










f> 


8 


2 










8 \* 



COLLECTOR CURRENT (I c ) — mA 



Fig. 3 - Typical gain-bandwidth product 
for all types. 



_ 140 
- 120 
2 100 
| 80 

I 60 
| 

S 20 
° 


COLLECTOR -TO 


EMITTER VOLTAGE (V CE |.< 


V 












S 






\ 


^ 
































































' 


^_ 


\& 


SE TEMPERATURE 
T C |.25 # C 






































12! -C, 
































V 









"Pulsed: Pulse duration - 300 us, duty factor - 1 JB%. 



"Pulsed: 1-second non-repetilive f 



10-2 

COLLECTOR CURRENT ( I c > - A 

92CS-2244: 

Fig. 4 - Typical dc beta characteristics 
for 2N6477. 



wii M iii in i!' HH,ui..anHiim;tnimm) 
CASE TEMPERATURE (Tc)»25"C 
(CURVES MUST BE DERATED 
LINEARLY WITH INCREASE 
IN TEMPERATURE) 




2 4 6 8 .«„,,,„ 2 4 6 8 

COLLECTOR-TO-EMITTER VOLTAGE (VcE> — V 94CS-22440 

Fig. 6 - Maximum operating areas for 2N6477 and 2N6478. 



1000 



- 140 

- 120 

" 100 

I ■ 

i eo 
f 

i "° 

i «• 

1 20 









■ 


\ 


.OLLI 


CT 


OR 


-TO-EMITT 


R 


VOI 


LTAGE 


(V CE ). 


4V 










\ 


\ 


































' 


r 




































\c 


SE 

T C 




:mpei 

25' C 


ATUf 


E 






































12! 


•<* 


V 


S 


































■s 









10-2 
COLLECTOR CURRENT { I c > - A 

Fig. 5 - Typical dc beta characteristics 
for 2N6478. 




Fig. 7 - Typical output characteristics 
for 2N6478and RCA3441. 



228 



POWER TRANSISTORS 



2N6477, 2N6478, RCA3441, RCA6263 



I0 

8 

6 
4 

2.5 

2 

< 

I I 

O s 
H 

~" 6 

Z 

a: 4 
a: 

O 

S 2 

t- 
O 

-1 

O 0.1 

° 8 

6 

4 

2 
0.01 












































































































































^lii-: hi; 


;!■( 




■ n-' 




■' i ■ 


r! ; 
















* 


!: 






'ii 


V.i: 




PULSE OPERATION* 
















IC MAX. PJLSEO; 






















;-i;;i i i::;r- 


"^75 




pifi 


'Iff 


4 


t i i 


Iff 


i!i: 














IC MAX. CONTINUOUS" j 












•■ H 
















: : ' 












' ; p 


\ i ^41 










iil 


!i:ti? 


j! !l ; 














'. ' 












: ! ! 


|l 










Sj 








































■■'Ii 








fi 


$fl 


"! ' 5 j 


:•!: 




















I0Q/U 




















r* 


















































-- 






























as 


•i*N 






+ -^ j 


i_— 






— 




































500 M s 




































J* = ; 


:. 1 
























' : 
















1 












" CASE TEMPERATURE 


(T C )«I00*C 


- 








| 




— 








(CURVES MUST BE DERATED LINEAR! 
WITH INCREASE IN TEMPERATURE) 


.r 




— - 


Jrrl 














----- 


i i 


II II 


20 ms 














\\ 


-_ ' ' 


















50 ms 








































- NONREPETITIV 

- PULSE 
















--St 


1 1 


























SI 


II 


























200 ms 










| 
























dc- 




































































1 1 


Ml 1 III II 




..... 


_ 






















Vet 






































































. .; - i ' 












- . : " 1 


:: 















120 

COLLECTOR-TO-EMITTER VOLTAGE (V C e) — V 

92CS-22442 

Fig. 8 - Maximum operating areas for 2N6477 and 2N6478. 




2 4 6 8 .'_ 2 

COLLECTOR-TO-EMITTER VOLTAGE (V C E>— V '*<> 

MCS- 222SO 

Fig. 1 1 - Maximum operating areas for RCA3441, RCA6263. 




COLLECTOR-TO-EMITTER VOLTAOE (Vcjl-V 



Fig. 9 - Typical output characteristics 
for 2N6477 and RCA6263. 




0.2 0.4 0.6 0.8 I 1.2 1.4 

BASE-TO-EMITTER VOLTAGE (Vbe>— V 

92CS-27T56 

Fig. 10 - Typical transfer characteristics 
for 2N6477 and 2N6478. 




Fig. 12 ■ Typical transfer characteristics 
for RCA3441. 




Fig. 13 - Typical transfer characteristics 
for RCA6263. 



.229 



POWER TRANSISTORS 



2N6479, 2N6480 

Radiation-Hardened Silicon N-P-N Power Transistors 

Epitaxial-Planar Types for Aerospace and Military Applications 



Rated for Operation in Radiation Environments 
with Cumulative Neutron Fiuence Levels to 1 x 
1014 Neutrons/cm2 and Gamma Intensity to 1 x 
108 Rad(Si)/s 



The RCA-2N6479 and 2N6480' are 
epitaxial silicon n-p-n planar power- 
switching transistors. They are de- 
signed for aerospace applications in 
which they might be subjected to ex- 
treme neutron and gamma-ray ex- 
posure. 



The 2N6479 and 2N6480 are intended 
for use in 5-to-10 ampere high- 
frequency power inverter service. 
They are supplied in hermetic flat 
3/4-inch (19.05 mm) diameter 
packages with radial leads . 

•Formerly RCA Dev. Nos. TA8007 and 
TA8007B, respectively. 



TERMINAL DESIGNATIONS 




C 
(CASE) 



MAXIMUM RATINGS, Absolute-Maximum Values 



(RADIAL) 



2N6479 



2N6480 



* VCBO 100 100 V 

VcER(sus) 

RBE<100Q 80 100 V 

* VrjEX 60 80 V 

*VcEO(sus) 60 80 V 

*VebO 6 V 

*'C 12 A 

'CM 25 A 

*'B 5 A 

*Pr: 

Tc<25°C 87 W 

Tc<25°C _SeeFig. 1 and5_ 

Tq = 100°C 50 w 

* Tj,T s tg ; _ -65to200 _ °C 

*T|_: 

During soldering, at distances 1/32 in. (0.8 mm) 

from seating plane for 10 s max 230 °C 

*ln accordance with JEDEC registration data 



PERCENTAGE OF MAXIMUM DISSIPATION AT 
Tc -ZS* C OR PERCENTAGE OF RATED 
CURRENT AT SPECIFIED VOLTAGE 


NOTE : CURRENT DERATING AT CONSTANT VOLTAGE 
APPLIES ONLY TO THE DISSIPATION- LIMITED PORTION 
AND I S /b -LIMITED PORTION OF MAXIMUM -OPERATING- 
AREA CURVES 00 NOT 0ERATE THE SPECIFIED 
VALUE FOR I c MAX. 













































































POO OS BO ITS 200 
CASE TEMPERATURE (T c )-t 



Fig. 1 ■ Derating curves for both types. 



100, 

» 4 

rv 

* 
i 










1 1 
























































v^-J 






















8 

-Z ■ 










F* 


ft 


ft 


fe 




























*8 


?' 


4r 
Or/ 


1*0' 
















































4 




























c 






















\^ 
























Xo 




s. c 1 














t 






B 








• 
















S 8 



NUMBER OF THERMAL CYCLES 



Fig. 2 • Thermal-cycling rating chart for both 
types. 



IO-'«, 

s ' 

i 

* ,. 

10 














CASE TEMPERATURE IT C )'25*C 










1 1 

'k. ""i""" 

* 














































*F£ 
























2 "♦♦r- 

»FE| 




























































































































































« 






1 




4 



















COLLECTOR CURRENT (I c l — A 

UCS-22UI 

Fig. 3 ■ Typical 1-Me ^-equivalent neutron dam- 
age coefficient as a function of collec- 
tor current for both types. 




Fig. 4 ■ Typical collector-to-emitter saturation 
voltage as a function of 1-Me V-equlv- 
alent neutron fiuence for both types. 



230. 



. POWER TRANSISTORS 



2N6479, 2N6480 



ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 
PRE-RADIATION 


25'C 




CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 




VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6479 
2N6480 


UNITS 


VCE 


vbe 


ic 


>B 


Mln. 


Max. 


ICBO 


10oa 








— 


1 


mA 


ices 


60 








— 


200 


MA 


icev 


100 









— 


1 


mA 


(Tc = 100 °C) 


60 









— 


1 


<EBO 




-6 






— 


2 


VEBO (IE = 2 mA) 










6 


— 


V 


VCEO(sus)b 2N6479 
2N6480 






0.2C 
0.2C 




60 
80 


— 


VCER(sus)b (Rbe = 100 Q) 
2N6479 
2N6480 






0.2C 
0.2C 




80 
100 


— 


hFE 


2 




12C 




20 


300 




VBE(sat) 






12C 


1.2 


— 


1.5 


V 


VcE(sat) 






12C 


1.2 


— 


O./b 


IS/b (t = 1 s) 


12 








7.3 


— 


A 


Es/b (Rbe = 100 q, 

L = 100 M H) 






5 




1.25 


— 


mJ 


|hfe| (f = 10 MHz) 


5 




1 




10 


— 




fT 


5 




1 




100 


— 


MHz 


Cobo (* = 1 MHz) 


10a 








— 


400 


PF 


tr 


30d 




12 


1.2 


— 


400 


ns 


ts 


30d 




12 


1.2e 


— 


800 


tf 


30d 




12 


1.2e 


— 


200 


R0dC 


10 






5 


— 


2 


°C/W 



*ln accordance with JEDEC registration data. 

'Vcr value. 

bCAUTION: The sustaining voltages V C EO(sus) and V C ER(sus) MUST NOT be measured on a curve 

tracer. These sustaining voltage's should be measured by means of the test circuit shown in Fig. 10. 

ePulsed; pulse duration < 350 ps, duty factor < 2%. 

d Vcc value. 

•'B-i = -'B2. 



TYPICAL CHARACTERISTIC DURING GAMMA EXPOSURE FOR DOSE RATES 
OF LESS THAN 1 x 108 RAD(Si)/sec 



CHARACTERISTIC 



Collector-to-Base 
Charge Generation 
Constant (C) 



TEST CONDITIONS 



VOLTAGE - V dc 



VCB 



20 



vbe 



LIMITS 



For both 
Types 



TYPICAL 



5x10" 



UNITS 



Coulomb 
Rad 



The charge generated in the depletion region of a transistor is proportional to the volume of the 

depletion region, the total dose, and the energy of the gamma radiation. 

The primary base-collector photo current [1 pP (base)] = < c fy. wnere * is ,he g amma dose ra,e in ' 

Rad(Si)/s. 



.231 



POWER TRANSISTORS 



2N6479, 2N6480 



POST-NEUTRON-RADIATION ELECTRICAL CHARACTERISTICS 

AFTER EXPOSURE TO 5 x 1013 NEUTRONS/cm2 (1 MeV equiv.), At Case 

Temperature (Tq = 25 'C 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6479 
2N6480 


VCE 


vbe 


ic 


>B 


Min. 


Max. 


'CEV 


100 









— 


1.2 


mA 


lEBO 




-5 






— 


2.2 


VcEO(sus)t> 2N6479 
2N6480 






0.2C 
0.2C 




60 
80 


• — 


V 


hFE 


5 




?c 




12 


— 




VBE(sat) 






7C 


1.4 


— 


1.5 


V 


VcE(sat) 






7C 


1.4 


'■ — 


1.5 


|hfe| (f = 10 MHz) 


5 




1 




10 






K* 










— 


9x10- 16 





*ln accordance with JEDEC registration data. 
bCAUTION: The sustaining voltage V*ceo( s us) MUST NOT be measured on a curve tracer. This sus- 
taining voltage should be measured by means of test circuit shown in Fig. 10. 
c Pulsed; pulse duration < 350 us, duty factor < 2%. 



A Damage constant K = 



h FE 2 "FE-i 



Where hpg 1 = Beta prior to exposure 
n FE2 = Beta a ' ter exposure 

6 = Neutron fluence (1 MeV equiv.) 



Knowing K, hpg 2 may be calculated for other 
fluences using the relationship: 



h FEo = 



K+ + 



n FEi 



« IO 

t> t - 

& 6 

O.I 














































































































I C MAX.(C 


3NTINU0US) 

kr 1 " ' ' 




























.1 


























s "^ 
































L?-^ 






























X -1, 


''♦, 






























, \ 


























































































































































* 































COLLECTOR TO-EMITTER VOLTAGE (V CE )-V 92 cS-22»29 

Fig. 6 ■ Maximum operating area for both types 
(T C = 100°C). 



_ l0 ° 

9 7 

i 6 
| - 

! 
i 

E 

o 

IO 


CASE 


TEMPERATURE (T C ).J5-C 












COLLECTOR-TO-EMITTER VOLTAGE IVCE>'" 


















1 








































" 






"•> 


s 
















^ 


v 






















\ 
















































1 


















H 


D 2 



COLLECTOR CURRENT (I c )— A 



Fig. 7 - Typical dc beta characteristic for both 
types. 




» ■' * "' « '« '"TJOCT 
COLLECTOR -TO- EMITTER VOLTAGE (V CE )— V 

Fig. 5 ■ Maximum operating areas for both 
types (T C = 25'C). 




COLLECTOR CURRENT Uc) —A 



Fig. 8 - Typical base-to-emitter saturation 
voltage characteristic as a function of 
collector current for both types. 



ii 

< 

i 

S 0.6 
Sj 0.2 

i 


CASE TEMPERATURE 


(T C )-25*C IIIIIIH 












ifiiftti 








Myjfej 












































w 
















iH : 


irf 




Wtlfltttftttftf 






tintumm 













































2 




i 




e 


s 


10 


12 14 



COLLECTOR CURRENT <I C > — A 



Fig. 9 ■ Typical collector-to-emitter saturation 
voltage characteristic as a function of 
collector current for both types. 



232 



POWER TRANSISTORS 



2N6486-2N6491 



15-A, 75-W, Silicon N-P-N and P-N-P Epitaxial-Base 
VERSAWATT Transistors 



Complementary Pairs for General-Purpose 
Switching and Amplifier Applications 

RCA-2N6486-2N6491*, inclusive, are epitaxial-base silicon 
transistors. The 2N6486, 2N6487. and 2N6488 are n-p-n 
complements of p-n-p types 2N6489. 2N6490, and 2N6491, 
respectively. All these devices are intended for a wide variety 
of medium-power switching and amplifier applications, and 
are particularly useful in high-fidelity amplifiers utilizing com- 
plementary-symmetry circuits. 

• Formerly RCA Dev. Nos. TA8325, TA8324, TA8323, TA8328, 
TA8327, and TA8326, respectively. 

MAXIMUM RATINGS, Absolute-Maximum Values: 

• COLLECTOR TO-BASE VOLTAGE V 

COLLECTOR TO EMITTER VOLTAGE: 

» With 1 .5 volts (VbeI o f reverse bias, and external 

base-to-emitter resistance (RbE) "= 100 ^ 

With external base-to-emitter 

resistance (RfjEl - 100 £2 

With base open 

» EMITTER-TO-BASE VOLTAGE 

•CONTINUOUS COLLECTOR CURRENT 

•CONTINUOUS BASE CURRENT 

• TRANSISTOR DISSIPATION. 

At case temperatures up to 25°C 

At ambient temperatures up to 25°C 

At case temperatures above 25°C ........ 

At ambient temperatures above 25°C 

• TEMPERATURE RANGE: 

Storage and operating (Junction) 

• LEAD TEMPERATURE (During soldering): 

At distance > 1/8 in. (3.1 7 mm) from 
seating plane for 10 s max 



These devices are supplied in the RCA VERSAWATT package 
in color-coded molded-silicone plastic; the 2N6489-2N6491 
(p-n-p) devices are green, and the 2N6486-2N6488 (n-p-n) 
devices are gray. All are regularly supplied in the JEDEC TO- 
220AB straight-lead version of the package. They are also 
available on special order in a variety of lead-form configu- 
rations. 



N-P-N 2N6486 2N6487 2N6488 



P-N-P 2N6489* 2N6490* 2N6491* 



VCEX 

VCER 
VCEO 
VEBO 

ic 

IB 
PT 



Derate linearly 0.6 
Derate linearly 0.0144 



W/°C 
W/°C 



In accordance with JEDEC registration data format JS-6 RDF-2. 

ELECTRICAL CHARACTERISTICS, At case temperature (Tel = 2S°C unless otherwise specified 



♦ For p-n-p devices, voltage and current values are negative. 









TEST CONDITIONS 




LIMITS 




UNITS 


CHARACTERISTIC 


SYMBOL 


VOLTAGE ( 
Vote 


:urr 

Adc 


2N6486 
2IMS489* 


2N6487 
2N6490* 


2NtV 
2NtV 


188 
191* 




V CE 


«BE 


'c 


Min. 


Mm. 


Min. 


Max. 


Min. 


Max. 


Collector-Cutoff Current : 
With external base-emitter 
resistance (RgE* = 100n 


'CER 


35 
55 
75 






" 


500 


\ 


500 


: 


500 


uA 


With base-emitter junction reverse 
biased and external base-to-emitter 


'CEX 


45 
65 
85 


-1.5 
-1.5 

-1.5 




: 


500 


Z 


500 


_ 


500 


uA 


At T c - 1 60°C 


40 
60 
80 


-15 

-1.5 
-1.5 




: 


5 


l 


.5 


\ 


5 


mA 


With base open 


'ceo 


20 
30 
40 






: 


1 


\ 


1 


'-_ 


," 


mA 


Emitter -Cutoff Current 


'ebo 




-6 





- 


1 


- 


1 


- 


1 


mA 


DC Forward-Current 


h FE 


4 
4 




5« 

15* 


20 

5 


150 


20 
6 


150 


5 






Collector -to-Emitter 

Sustaining Voltage 


V CEO lsusl 






0.2 


40* 




60" 




80* 




- 


With external base-emttter 
resistance 1R QE > = 100O 


V CER lsusl 






02 


45" 




6S b 




85" 




With base-emttter (unction reverse - 
biased and external base-to-amtuer 
resistance (R BE > = 10011 


V CEX Uusl 




1.5 


02 


50* 




70 b 




90l> 




* Base-to- Emitter Voltage 


V BE 


4 
4 




5a 

1S» 




13 

35 




1.3 
3b 


: 


1.3 
3.5 


V 


* Collector-to-Emitter __ . 


l B = 0.5A 
l B = 5A 


V CE lsatl 






5» 

IS* 




1.3 
3.5 




1.3 
3.5 


■ 


1.3 
3.5 


V 


* Magnitude of Common-E 
Small-Signal ShortCir 
Forward-Current Tran 
f = 1 MHz 


Ult 

fer Ratio : 


1 v 1 


4 




1 


5 




5 




5 






* Common-Emitter, Small-Signal, 

Short-Circuit, Forward-Current 


h fe 


4 




' 


;25 


" 


2b 


" 


2b 


- 




Thermal Resistance : 


R 8JC 








- 


1.67 


" 


i.er 


- 


,67 


°c/w 


Ju nc,io n ,o- amb ,en, 


r 0ja 








" 




" 


70 




70 



• In, 



e with JEDEC reg.stration data forma. (JS-6 RDF-2). " CAUTION: Suste.nmg ,o/»o« V c£0 l,usl. V cef ,lsusl , nd „ 

, _. MUST NOT be measured on a curve Tracer : (See Fig- 11 

* Pulsed: pulse duration = 300 us. duty factor - 1.8* _„„,..,„ 

♦ For p-n-p devices voltage and current values are negative 



Features: 

■ Thermal-cycling ratings 

■ Maximum safe-area-of-operation curves 

■ Color-coded packages of molded-silicone plastic: 

Green - p-n-p (2IM6489, 2N6490, 2N6491 ) 
Gray -n-p-n (2N6486, 2N6487, 2N6488) 



TERMINAL DESIGNATIONS 



BOTTOM VIEW 




JEOEC TO-220AB 











I 18 

1 1» 








5 75 

i 

i" 

■. 25 


- 1 1 1 1 1 1 1 1 1 1 III 1 1 1 1 1 1 1 1 ll\l 1 1 







D 25 50 100 ISO 2 

CaSETEWERATUIIEITcl-^C 



Fig. 1 - Derating chart for all types. 




NUMBER OF THERMAL CYCLES 



Fig. 2 - Thermal-cycling rating chart 

4r\r alt fi/np.c 



a 
n 

I 10 

X 

1 » 

| a 
§ 7 

I 6 
X 

£ 5 
| 4 

< 

" 3 

I 2 

1 



COLLECTOR- 


T0- 
RAT 


EMITTER VOLTAGE (V CE 1" 


4V 








CASE 



















































































































































































































































































































COLLECTOR CURRENT (I C ) — A 9ZCS-22449RI 

Fig. 3 - Typical gain-bandwidth product as a 

function of collector current for all types. 

* For p-n-p devices, voltage and current values are negative. 

233 



POWER TRANSISTORS 



2N6486-2N6491 




40 60 80 I00 
COLLECTOR-TO-EMITTER VOLTAGE <Vce> — V 

92CS- 22809 

Fig. 4 ■ Maximum operating areas for all types. * 




Fig. 5 - Maximum operating areas for all types. * 



i660 B 

* 6 
I 

" I00 

1 ! 

* ,0 












| 










| | 




1 










CASE TEMPERATURE (T C ).I25*C 










s£ 


cX. 
































T^ 


p£ iN\ 

























































































































COLLECTOR CURRENT (!<;>— A 



Fig. 6 ■ Typical dc beta characteristics for 
2N6486, 2N6487, and 2N6488. 




BASE-TO-EMITTER VOLTAGE IVflgl— V 



Fig. 7 • Typical transfer characteristics for 
all types. * 



Ul0 3 9 
1 « 














































case* 
























29^ 






V 


























^s 


*> 






























































r- 1 
















65 












































\ C 








































g * 

i * 








































































































































































B 








8 








8 








a 



COLLECTOR CURRENT (I.) — A 



Fig. 10 - Typical dc beta characteristics 
for 2N6489, 2N6490, 2N6491. 




COLLECTOR-TO-EMITTER VOLTAGE 1V CE >- 



Fig. 8 ■ Typical output characteristics for 
all types. * 



1.2 
t 

5. 0.8 

1 

I 0.6 

£ 04 

0.2 


si 


p 


HHj 




•PULSE DURATION 


•20|>> 




r«n 






i COLLECTOR 


SUPPLY VOLTAGE (V cc l- -20V 


Is 








J CASE TEMPERATURE (T C )-25"C 
flB|'I»2-IC"0 


~~ 








Bill 




n 




KL 




— ! r i lifjiHw 


hi 


%! illilliplllllll'liili 




& 












u 


RN- 


>ELAY TIME(l d l. 









































« 


6 


» 


10 



COLLECTOR CURR£NT(I C > A 



Fig. 11 - Typical saturated switching 
characteristics for 2N6489, 
2N6490, and 2N6491. 

♦ For p-n-p devices, voltage and current values are negative. 



I.2 


: : ; ; 


Sft 


.:.!:::': 


PULSE DURATI0N*20»« 
REPETITION RATE- PULSE It 












k 


V 


COLLECTOR SUPPLY VOLTAGE (V C C>'50V 
CASE TEMPERATURE (T C )*S*C 


o.e 
I 

% 0.6 

2 

5 04 
* 

02 








IB, -iBj'IC'IO 










$&■■■■■■ 


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w> 


tf£ 






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4 








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^i 






§Tt 






MJj 














ijit 


TTE 










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&: 






:6elay time imlKJ 






















ffl 





































COLLECTOR CURRENTIIr) A 

U 9ZCS-22- 

Fig. 9 - Typical saturated switching 
characteristics for 2N6486, 
2N6487, and 2N6488. 



-J 

>-2S 

1 

ST t 

li 

di -i 

8-05 


CASE TEMPERATURE IT C |. 


2SV 

!* 






~~ 


H- 












:!i; 




•;^ 


Uii 




r.3 


IfflffiflfllHIllllllHllllllHH 


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:tn 


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rrt 




















"::|ljUlll}|||||||||||||[tf 

















































































- 






2 


- 


6 -20 



COLLECTOR CURRENT (!(;)— A 



Fig. 12- Typical collector-to-emitter satur- 
ation-voltage characteristics for 
all types. 



234 



POWER TRANSISTORS 



2N6510-2N6514 

High-Voltage, High-Current, Silicon N-P-N Power Switching 
Transistors 



For Switching Applications in Industrial 
Commercial and Military Equipment 



The RCA-2N6510,-2N6511,-2N6512,-2N6513, and-2N6514* These devices are hermetically sealed in a steel JEDEC TO-3 

are epitaxial silicon n-p-n power transistors with pi-nu con- package. They differ from each other in breakdown-voltage 

struction. They are especially designed for use in electronic ratings, leakage, a nd beta characteristics, 

ignition circuits and other applications requiring high-voltage, •c ormer , y RCA Dev. N 0S . TA8847D, TA8847A. TA8847B. TA8847C 

high-energy, and fast-switching-speed capability. an< j TA8847E, respectively. 

MAXIMUM RATINGS, Absolute-Maximum Values: 

2N6510 2N6511 2N6612 2N6613 2N6614 

•COLLECTOR-TO-BASE VOLTAGE V CBO 250 300 350 400 350 V 

COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: 

With external base-to-emitter resistance R BE =50 fl v CER (sus) 2S0 300 35 ° 40 ° 350 V 

With base open V CE0 (sus) 200 250 300 350 300 V 

•EMITTER-TO-BASE VOLTAGE V EB0 6 6 6 6 6 V 

•CONTINUOUS COLLECTOR CURRENT I c 7 7 7 7 7 A 

•CONTINUOUS BASE CURRENT I B 3 3 3 3 3 A 

•EMITTER CURRENT I E 10 10 10 10 10 A 

•TRANSISTOR DISSIPATION: P T 

At case temperatures up to 25°C 120 120 120 120 120 W 

At case temperatures above 25°C See Figs. 1 and 2. 

•TEMPERATURE RANGE: 

Storage and Operating (Junction) — — . . —65 to +200 ■ C 

•PIN TEMPERATURE (During Soldering): 

At distances > 1/32 in. (0.8 mm) from seating plane for 10 s max. . 230 — - °C 

•In accordance with JEDEC registration data format JC-25 RDF-1 . 



Features: 

• Fast switching speed 

■ Epitaxial pi-nu construction 

■ Hermetic steel package-JEDEC TO-3 

■ Maximum-safe-area-of-operation curves 

■ Thermal-cycling rating chart 

TERMINAL DESIGNATIONS 





25 50 75 100 125 150 175 200 

CASE TEMPERATURE (T c l — "C 




Fig. 2 - Derating curve for all types. 



10 100 200|30o| 1000 

COLLECTOR-TO-EMITTER VOLTAGE (V CE ) — V 250 350 92CS-2502I 



Fig. 1 ■ Maximum operating areas for all types. 



100 




























* 














> 




L 










1 • 




Sk 










< 

s 


,\\ 


"^ 


*r 








! \ 












i\\ 


V \ 










* 2 

o 

10 


l\ 


N 


\ 


X 


^ 





NUMBER OF THERMAL CYCLES 



Fig. 3 • Thermal-cycling rating chart 
for all types. 



- 100 

s • 

>- 10 


COLLECTOR-TO-EMITTER VOLTAGE (V CE )'3V 
















I25'C 


























"25-C 


























CASE 


TE 


IPE 


RATURI 


(T c ) 


-4 


0* 


; 


-*-. 


N 




























v 




2 * 
























s 


<\ 


I , 
8 * 

8 i 


























\ 


























i 





























COLLECTOR CURRENT (I c l — A 



Fig. 4 - Typical dc beta characteristic for 
all types. 

235 



POWER TRANSISTORS 



2N6510-2N6514 

ELECTRICAL CHARACTERISTICS, Case Temperature (T c ) - 2S°C Unless Otherwise Specified 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6612 
2N6614 


2N6513 


V CE 


vbe 


'C 


■b 


Min. 


Typ. 


Max. 


Min. 


Typ. 


Max. 


Collector-Cutoff Current: 
With base open 


'CEO 


250 
300 








- 


- 


5 


- 


- 


5 


mA 


With base-emitter 
junction reverse biased 


'CEV 


350 
400 


-1.5 
-1.5 






- 


- 


5 


- 


- 


5 


mA 


With base-emitter 
junction reverse biased, 
T C =100°C 


350 
400 


-1.5 
-1.5 






- 


- 


10 


- 


- 


10 


Emitter-Cutoff Current 


'ebo 




-6 






- 


- 


3 


- 


- 


3 


mA 


Collector-to-Emitter 

Sustaining Voltage: 

With base open 


V CE0 (sus) 






0.2 




300^ 






350° 






V 


With external base-to- 
emitter resistance: 

Rbe - so n 


VcER<sus) 






0.2 




350 b 


- 


- 


400 b 


- 


- 


Emitter-to-Base Voltage: 

lg ■ 3 mA 


v ebo 










6 


- 


- 


6 


- 


- 


V 


DC Forward-Current 
Transfer Ratio: 

2N6512, 2N6513 
2N6514 


"fe 


3 
3 




4 a 
5 a 




10 
10 


- 


50 
50 


10 


- 


50 




Base-to-Emitter 
Saturation Voltage: 

2N6512, 2N6513 
2N6514 


V BE (sat) 






4 a 
5 a 


0.8 
1 


- 


- 


1.7 
1.7 


- 


- 


1.7 


V 


Collector-to-Emitter 
Saturation Voltage: 

2N6512, 2N6513 
2N6514 
All tvpes 


v CE <»t) 






4 a 
5 

7 


0.8 

1 
3 


- 


1.5 


1.5 
1.5 
2.5 


- 


1.5 


1.5 
2.5 


V 


Output Capacitance: 
V CB = 10V,f-1 MHz 


c obo 










100 


- 


200 


100 


- 


200 


pF 


Magnitude of Common 
Emitter, Small-Signal 
Short-Circuit, Forward- 
Current Transfer Ratio: 
f = 1 MHz 


M 


10 - 




1 




3 


- 


9 


3 


- 


9 


MHz 


Forward-Bias, Second- 
Breakdown Collector 
Current: 
t - 1 s, nonrepetitive 


>S/b 


38 
200 








3.16 
0.1 


- 


- 


3.16 
0.1 


- 


_ 


A 


Switching Time: c 

(V CC «200V, l B1 -l B2 ): 
Delay Time: 

2N6S12.2N6513 
2N6514 


«d 






4 
5 


0.8 


- 


0.1 
0.1 


0.2 
0.2 


- 


0.1 


0.2 


^ s 


Rise Time: 

2N6512, 2N6513 
2N6514 


V 






4 
5 


0.8 


- 


0.7 
0.7 


1.5 
1.5 


- 


0.7 


1.5 


Storage Time: 

2N6512, 2N6513 
2N6S14 


«s 






4 
5 


0.8 


- 


3 
3 


5 

5 


- 


3 


5 


Fall Time: 

2N6512, 2N6513 
2N6514 


tf 






4 
5 


0.8 


- 


0.5 
0.5 


1.5 
1.5 


- 


0.5 


1.5 


Thermal Resistance: 
Junction- to-Case 


Rfljc 


20 




5 




- 


- 


1.46 


- 


- 


1.46 


°C/W 



* Minimum and maximum values and test conditions 

in accordant* with JEDEC registration data format JC-25 RDF-1. 

* Pulsed; pulse duration - 300 ps, duty factor < 2%. 



CAUTION: The sustaining voltages V CE0 (sus> and \ 
MUST NOT be measured on a curve tracer. 



C See Figs. 10a 



10, 

J. 

1 , 

|o.. - 

i ! 

0.01 


— i 1 — u — : 


/>. i 














l-imaxicontin 






5$s 


















V 




























VY % 














CASE TEMPERATURE 

I IW-iVC 1- — ■ 
























"# 


- — 1 1 — H-l 


■** 










*> 




















































*<> 














| 










































(MAX.! • 250 V (2N69II 
(MAX.) • 300 V (2N63I2 
n (MAX.) • 390 V (2N65I3 

r 1 1 i i 




















Vcf 


- 






s 


>h 










V C E 


, 2N6SI4)— 


H 


A 










J5 


L 








11 











































COLLECTOR-TO-EMITTER VOLTAGE CV CE ) — V 

92CS-25024 

Fig. 5 ■ Maximum operating areas for 
all types at 2S°Cand 100°C. 




COLLECTOR-TO-EMITTER SATURATION VOLTAGE [v a (tat)] — V 
•2CS-29CM 

Fig. 6 - Typical collector-to-emitter satur- 
ation-voltage characteristics for 
all types. 



IS 


COLLEC 


rOR-TO-EMITTER VOLTASC IVfyl-avH 1 1 1 1 I 1 1 H- 






•f 






i.12.9 






1 *° 


1 1 1 1 II 1 H+a 
1 1 1 11 1 rM*^ri 


I B 


I" 


TrrrUffl 




9 s 


ftf 




23 


44l4-*l/lfr+ 




T+r* 






ffi& 







BASE-TO-EMITTER VCU7UC (V K ) — V 

•2Cf-ttotr 

Fig. 7 - Typical transfer characteristics for 
all types. 




COLLECTOR- TO- EMITTCT VOLTME (V^l — V 

•Ks-neit 
Fig. 8 - Typical output characteristics for 
all types. 



236 



POWER TRANSISTORS 



2N6510-2N6514 



ELECTRICAL CHARACTERISTICS, Case Temperature (T c ) - 2S°C Unlets Otherwise Specified 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6510 


2N6511 


V C E 


Vbe 


'C 


■b 


Min. 


Typ. 


Max. 


Min. 


Typ. 


Max. 


Collector-Cutoff Current: 
With base open 


'CEO 


150 
200 








- 


- 


5 


- 


- 


5*- 


mA 


With base-emitter 
junction reverse biased 


'CEV 


250 
300 


-1.5 
-1.5 






- 


- 


5 


- 


- 


5 


mA 


With base-emitter 
junction reverse biased, 
T C -100°C 


250 
300 


-1.5 
-1.5 






- 


- 


10 


- 


- 


10 


Emitter-Cutoff Current 


'EBO. 




-6 






- 


- 


3 


- 


- 


3 


mA 


Collector-to-Emitter 

Sustaining Voltage: 

With base open 


V CE0 (sus) 






0!2 




200° 






250 b 






V 


With external base-to- 
emitter resistance : 
R BE ~ so n 


V CER (sus) 






0.2 




250 b 


- 


- 


300° 


- 


- 


Emitter-to-Base Voltage: 

l E '3mA 


V E BO 










6 


_ 


_ 


6 


_ 


_ 


V 


DC Forward-Current 
Transfer Ratio 


"FE 


3 
3 




3 a 
4 a 




10 


- 


50 


10 


- 


50 




Base-to-Emitter 
Saturation Voltage 


V BE (sat| 






3» 
4 a 


0.6 
0.8 


- 


- 


1.7 


- 


- 


1.7 


V 


Collector-to-Emitter 
Saturation Voltage 


V CE (sat) 






3 a 
4 a 
7 a 


0.6 
0.8 
3 




1.5 


1.5 
2.5 




1.5 


1.5 
2.5 


V 


Output Capacitance: 
V CB = 10 V, f = 1 MHz 


c obo 










100 


- 


200 


100 


- 


200 


pF 


Magnitude of Common 
Emitter, Small-Signal 
Short-Circuit, Forward- 
Current Transfer Ratio: 
f-1MHz 


hi 


10 




1 




3 


- 


9 


3 


- 


9 


MHz 


Forward-Bias, Second- 
Breakdown Collector 
Current: 
t = 1 s, nonrepetitive 


'S/b 


38 
200 








3.16 
0.1 


- 


- 


3.16 
0.1 


- 


- 


A 


Switching Time: c 

(V CC -200V, l B1 = l B2 ): 

Delay Time 


»d 






3 
4 


0.6 
0.8 


- 


0.1 


0.2 


- 


0.1 


0.2 


V* 


Rise Time 


t r 






3 
4 


0.6 
0.8 


_ 


0.7 


1.5 


- 


0.7 


1.5 


Storage Time 


«s 






3 

4 


0.6 
0.8 


- 


3 


5 


- 


3 


5 


Fall Time 


tf 






3 

4 


0.6 
0.8 


_ 


0.5 


1.5 


_ 


0.5 


1.5 


' Thermal Resistance: 
Junction- to-Case 


Rfljc 


20 




5 




- 


- 


1.46 


- 


- 


1.46 


°C/W 



* Minimum and maximum value* and test conditions 

in accordance with JEOEC registration data format JC-25 RDF-1. 

* Pulsed; pulse duration - 300 jis. duty factor < 2%. 



1 CAUTION: The sustaining voltages V CE o(sus) and V CE p(sus) 
MUST NOT be measured on a curve tracer. These sustaining 
voltages should be measured by means of the test circuit shown 
in Fig. 11. 
See Figs. 8-10. 



IS 

I 12.5 

I" 

23 


tc'ia- 


i 4; 






1 llffffffi^ 


t 


:;! 












t 


lit. 
it 












1 


! 












T 


)• 


tt 














ra 


1 


gjjlffl 


i 


J- : ^| 






$■ 


■H 




is 








i : 


:5i. 






H 
















:: n 



aMC-TO-tmrrai saturation vsltme {v^im*]— v 

• 2CS-290Z* 

Fig. 9 - Typical base-to-emitter saturation- 
voltage characteristics for all types. 




Fig. 10 - Typical rise- and fall-time charac- 
teristics for all types. 




OOLLECTOR CURRENT <!(> — A 



Fig. 1 1 - Typical storage-time characteristic 
for all types. 



237 



POWER TRANSISTORS 



2N6530-2N6533 

8-Ampere N-P-N Darlington Power Transistors 



80, 100, 120 Volts, 60 Watts 

Gain of 1000 at 5 A (2N6530, 2N6532) 

The RCA-2N6530, 2N6531, 2N6532, and 
2N6533* are monolithic n-p-n silicon Dar- 
lington transistors designed for power appli- 
cations at low and medium frequencies. The 
double epitaxial construction of these de- 
vices provides good forward and reverse 
second-breakdown characteristics. Their high 
gain allows them to be driven directly from 
integrated circuits. 



Gain of 1000 at 3 A (2N6533) 
Gain of 500 at 3 A (2N6531) 



< 



1.2 kfi • 100 a ' > 



Formerly RCA Dev. Nos. TA8904C, TA8904D, 
TA8904B, and TA8904A, respectively. 



Fig. 1 - Schematic diagram for all types. 



MAXIMUM RATINGS, Absolute-Maximum Values: 

2N6530 2N6531 2N6532 

* V CBO 80 100 100 

V CER (sus) 

R BE = 10012 80 10 o 100 

V CEO (sus) 80 100 100 

*V CEV (sus) 

V BE = -1.5V 80 100 100 

#V EBO 5 5 5 

*'C 8 8 8 

'CM • • 15 15 15 

#, B 0.25 0.25 0.25 

#P T 

Upto25°C 65 65 65 

Above 25°C See Fig. 2 

* T J' T stg 65 to +150 

* T L 

At distances ~> 1/8 in. (3.17 mm) 

from case for 10 s max _ 235 

* In accordance with JEOEC registration data format JS-6, RDF-4. 



2N6533 
120 



120 
120 



120 V 

5 V 

8 A 

15 A 

0.25 A 



W 
°C 



Features: 

■ Operate from IC with- 
out predriver 

■ Low leakage at high 
temperature 

■ High reverse second- 
breakdown capability 

Applications: 

■ Power switching 

■ Hammer drivers 

■ Series and shunt regulators 

■ Audio amplifiers 

TERMINAL DESIGNATIONS 




BOTTOM VIEW 



JEDEC TO-220AB 




90 TS 100 129 190 179 200 
USE TEMPERATURE IT C I — »C 



Fig. 2 - Dissipation derating curve for 
all types. 



* 4 

1 

5- 

o 

I'"; 

> 4 

O 

1 


















































8 

i 


















^s^ 


h 


















l>u 
















"N* 


















$v 








I 


\%~ 












Va 




fY\ 







NUMBER OF THERMAL CYCLES 



Fig. 3 - Thermal-cycling rating chart 
for all types. 



£ io 4 - 
































COLLECTOR-TO-EMITTER VOLTAGE (V[ E I'1V 












































































































































$ 












\ 
























































•c 

N'T?* 




> 


N 


\ 












§ 

to 2 




















? 


















& 












1 












4- 


&* 


^ 
















I 


























\ 










' 




















\ 











































COLLECTOR CURRENT' I.) —A 



Fig. 4 - Typical dc beta characteristics 
for all types. 



238 



POWER TRANSISTORS 



2N6530-2N6533 



ELECTRICAL CHARACTERISTICS, At Case Temperature (T c ) « 25°C unless 

otherwise specified 



CHARACTERISTIC 
SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CUR 
A 


RENT 
de 


2N6630 


2N6531 


V C E 


v B e 


'c 


>B 


Min. 


Max. 


Min. 


Max. 


'CEO 


80 
100 










- 


1 


- 


1 


mA 


>CEV 


80 
100 


-1.5 
-1.5 






- 


0.5 


_ 


0.5 


T c = 125°C 


80 
100 


-1.5 
-1.5 






- 


5 


_ 


5 


'ebo 




-5 







- 


5 


- 


5 


mA 


"FE 


3 
3 
3 




5 a 
3 a 
83 




1,000 
100 


10,000 
5,000 


500 
100 


10,000 
5,000 




V CE0 (sus) 






0.2 





80 b 


- 


100 b 


- 


V 


V CER (sus) 
R BE = 100 ft 






0.2 




80 b 


- 


100 b 


- 


V CEV (sus) 




-1.5 


0.2 




80 b 


- 


100 b 


- 


V B E 


3. 

3 

3 




5 a 
3 a 
8 a 




- 


2.8 
4.5 # 


- 


2.8 
4.5* 


V 


V CE (sat) 






3 a 
5 a 
8 a 


0.006 
0.01 
0.08 


- 


, 2 
3* 


- 


3 
3' 


V 


V F 






S 8 
8* 




- 


5 


_ 


4 


V 


h fe 

f=1 kHz 


5 




1 




1,000 


- 


1,000 


- 




Ihfel 

f =1 MHz 


5 




1 




20 


- 


20 


- 




c obo 

V CB =10V 
f =1 MHz 










- 


200 


- 


200 


PF 


'S/b 

t = 0.5 s, 

nonrep. 


24 








2.7 


- 


2.7 


- 


A 


E S/b 

L= 12mH 
R BE = 100 ft 




-1.5 


4.5 




120 


- 


120 


- 


mJ 


R 0JC 










- 


1.92 


- 


1.92 


°c/w 



* In accordance with JEDEC registration data format JS-6, RDF-4. 

a Pulsed, pulse duration * 300 jis, duty factor < 2%. 

b CAUTION: Sustaining voltages V CE0 (sus), V CER (sus), and V cev (sus) MUST NOT be measured on 



*i 








































C0U-ECT0R-T0-EMITTER VOLTAGE (V CE ) -5 V 


"i 2 

iio 5 , 

K 4 

I 


















CASE TEMPERATURE (Tcl'25'C 




























































































































































































2 
10 




























































































































































I 





























FREQUENCY (f)-MHZ 



Fig. 5 - Typical small-signal current gain 
for all types. 




tASC-TO-EMITTCR V0LTA8C ( V K I — V 

Fig. 6 - Typical input characteristics for 
all types. 




10 12 

COLLECTOH-T0-CIIIITTER VOLTAGE (Vet' — v 

UCS-24«M 

Fig. 7 ■ Typical output characteristics for 
all types. 



a curve tracer. 



239 



POWER TRANSISTORS 



2N6530-2N6533 



ELECTRICAL CHARACTERISTICS, At Case Temperature (T c ) = 25°C unless 

otherwise specified 



CHARACTERISTIC 
SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6532 


2N6633 


V CE 


v BE 


'c 


'B 


Min. 


Max. 


Min. 


Max. 


'ceo 


120 
100 










- 


1 


- 


1 


mA 


'CEV 


120 
100 


-1.5 
-1.5 






- 


0.5 


: 


0.5 


T c = 125°C 


120 
100 


-1.5 
-1.5 






- 


5 


- 


5 


'ebo 




-5 







- 


5 


- 


5 


mA 


h FE 


3 
3 
3 




3 a 
5 a 
8 a 




1,000 
100 


10,000 
5,000 


1,000 
100 


10,000 
5,000 




V CE0 (sus) 






0.2 





100 b 


- 


120 b 


- 


V 


V CER (sus) 

R BE = 100 n 






0.2 




100 b 


- 


120 b 


- 


V CEV (sus) 




-1.5 


0.2 




100 b 


- 


120 b 


- 


V B E 


3 
3 
3 




3 a 
5 a 
8 a 




- 


2.8 
4.5* 


- 


2.8 
4.5* 


V 


V CE (sat) 






3 a 
5 a 
8 a 


0.006 
0.01 
0.08 


- 


2 
3* 


- 


2 
3* 


V 


v F 






53 
8 s1 




- 


5 


_ 


4 


V 


h fe 

f = 1 kHz 


5 




1 




1,000 


- 


1,000 


- 




l h fe| 

f = 1 MHz 


5 




1 




20 


- 


2b 


- 




c obo 

v CB = 10 V 

f=1MHz 










- 


200 


- 


200 


pF 


'S/b 

t = 0.5 s, 
nonrep. 


24 








2.7 


- 


2.7 


- 


A 


E S/b 

L= 12mH 
R BE = 100fi 




-1.5 


4.5 




120 


- 


120 


- 


mJ 


R 0JC 










- 


1.92 


- 


1.92 


°c/w 



In accordance with JEDEC registration data format JS-6, RDF-4. 
a Pulsed, pulse duration = 300 /us, duty factor ^ 2%. 
b 



s • 

3 •. 

c 
S 

5 s 

li. 


1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 H-t-ly ,. • '.OOP 

II II 1 1 1 1 II 1 1 lllllff T c " inn "'" 












S * 




^ljobb.25" 






ii; 1 












loo.iooy: 
hpj-ioo : 

T c .2S-c: 







COLLECTOR CURRENT (I c ) -A 

93CS-24 

Fig. 8 ■ Typical saturation characteristics 
for all types. 




■ASE-TO-CMITTCR V0LTME(V K )— V 



»CS-24tl2m 



Fig. 9 - Typical transfer characteristics 
for all types. 



5 

1 S 

I 

2 

9 


COLLECTOR SUPRLT VOLTAGE (Vrr). 


20 V 












V-Vc /500 
























































































^v 








y 












X 


< 


** 


















V 




















\ 














'd 

























COLLECTOR CURRENT 1 1.) - 



S 6 T 8 9 10 



Fig. 10- Typical saturated switching-time 
characteristics for all types. 



'CAUTION: Sustaining voltages V CE0 (sus), V CER (sus), 
on a curve tracer. 



and V CEV (sus) MUST NOT be measured 



240 



POWER TRANSISTORS 



2N6530-2N6533 



CASE TEMPERATURE <T C } = 25°C 
(CURVES MUST BE DERATED LINEARLY 
WITH INCREASE IN TEMPERATURE) 



v CEO ( MAX )s ^ v (2N6530) 

V CEO (MAX ' ) ' l0 ° v (2N653I, 2N6532) 

V rcn (MAX. ) = 120 V (2N6533) 

i i iiiii'i i i i ii ii" iiiiiil 



6 8 l'o 



6 80.,J20 




1000 
COLLECTOR-TO-EMITTER VOLTAGE ( V CE ) — V 92CS-24603RI 

Fig. 1 1 - Maximum operating areas for all types at case temperature of 25°C. 




COLLECTOR-TO-EMITTER VOLTAGE (V CE )— V 92CS-24604RI 

Fig. 12 - Maximum operating areas for all types at case temperature of 10CPC. 



241 



POWER TRANSISTORS 



2N6534-2N6537 

8-Ampere N-P-N Darlington Power Transistors 



80, 100, 120 Volts, 36 Watts 

Gain of 1000 at 5 A (2N6534, 2N6536) 

The RCA-2N6534, 2N6535, 2N6536, and 
2N6537* are monolithic n-p-n silicon Dar- 
lington transistors designed for power appli- 
cations at low and medium frequencies. 
The double epitaxial construction of these 
devices provides good forward and reverse 
second-breakdown characteristics. Their high 
gain allows them to be driven directly from 
integrated circuits. 

These transistors are supplied in JEDEC 
TO-66 hermetic packages. 

• Formerly RCA Dev. Nos. TA8941C, TA8941D, 
TA8941 B, and TA8941 A, respectively. 



Gain of 1000 at 3 A (2N6537) 
Gain of 500 at 3 A (2N6535) 



Q c 



• 12 ha m too a 



Fig. 1 • Schematic diagram for all types. 



Features: 

■ Operate from IC without predriver 

■ Low leakage at high temperature 

■ High reverse second-breakdown capability 

Applications: 

■ Power switching ■ Audio amplifiers 

■ Hammer drivers ■ Series and shunt regulators 



TERMINAL DESIGNATIONS 




MAXIMUM RATINGS, Absolute-Maximum Values: 



JEDEC TO-66 



>(su$) 



/(sus) 



'CM 

"'b 



Upto25°C 36 

Above 25°C 



■stg 



At distances > 1 /8 in. (3.1 7 mm) 
from case for 10 s max 



2N6634 


2N6536 2N6536 


2N6537 




80 


100 


100 


120 


V 


80 


100 


100 


120 


V 


80 


100 


100 


120 


V 


80 


100 


100 


120 


V 


5 


5 


5 


5 


V 


8 


8 


8 


8 


A 


15 


15 


15 


15 


A 


0.25 


0.25 


0.25 


0.25 


A 


36 


36 


36 


36 


W 










°C 
°C 

Or 















* In accordance with JEDEC registration data format JS-6, RDF-4. 




15 SO 78 KM Its ISO ITS 200 
CASE TEMPERATURE <T C ) — *C 

9tCS-24IOS 



Fig. 2 • Dissipation derating curve 
for all types. 



100 

• 

I • 

Z 4 

o 

I 
l 

'9 






















































































































































\ 








CASE-TEMPERATURE 
CHANGE I4T C ) » SO'C 






8 


>| 


\ 






















\ 


\ 


\ 


















"» 
? 


V 


V* 


5*c\l0 


5»C 


\ 


8' 

kl 











NUMBER OF THERMAL CYCLES 

t2CS-2970 

Fig. 3 - Thermal-cycling rating chart 
for all types. 



£ 10* - 

1 J. 

S '• 

* 4 
S 




































































































-A 




































V** 




\ 


\~^ 









/* 


a'*- 








*J — 






i 


& 


^ 








V 














\ 
















\ 







COLLECTOR CURRENT U r ) - 



Fig. 4 - Typical dc beta characteristics 
for all types. 



242 



POWER TRANSISTORS 



2N6534-2N6537 



ELECTRICAL CHARACTERISTICS, At Case Temperature (T c ) = 25°C unless 

otherwise specified 



CHARACTERISTIC 
SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CUR 

A 


RENT 
kdc 


2N6534 


2N653S 


V CE 


V BE 


'c 


'B 


Min. 


Max. 


Min. 


Max. 


'ceo 


80 
100 










- 


1 


- 


1 


mA 


'CEV 


80 
100 


-1.5 
-1.5 






: 


0.5 


- 


0.5 


T C = 150°C 


80 
100 


-1.5 
-1.5 






: 


5 


- 


5 


'ebo 




-5 







- 


5 


- 


5 


mA 


hFE 


3 
3 
3 




5 a 
3 a 
8 a 




1,000 
100 


10,000 
5,000 


500 
100 


10,000 
5,000 




V CE0 (sus) 






0.2 





80 b 


- 


100 b 


- 


V 


V CER (sus) 
R BE = 100 il 






0.2 


, 


80 b 


- 


100 b 


- 


V CEV' SUS) 




-1.5 


0.2 




80 b 


- 


100 b 


- 


V B E 


3 
3 
3 




5 a 
3 a 
8 a 




- 


2.8 
4.5* 


- 


2.8 

4.5* 


V 


V CE (sat) 






3 a 
5 a 
8 a 


0.006 
0.01 
0.08 


: 


2 
3* 


- 


3 
3* 


V 


v F 






5 a 
8" 




- 


5 


- 


4 


V 


h fe 

f = 1 kHz 


5 




1 




1,000 


- 


1,000 


- 




ih f ;i 

f = 1 MHz 


5 




1 




20 


- 


20 


- 




C obo 

V CB = 10 V 
f = 1 MHz 










- 


200 


- 


200 


pF 


'S/b 
t= Is, 
nonrep. 


34 








1.06 


- 


1.06 


- 


A 


E S/b 

L= 12mH 
R BE = 100 SI 




-1.5 


4.5 




120 


- 


120 


- 


mJ 


R 0JC 










- 


3.5 


- 


3.5 


°C/W 



In accordance with JEDEC registration 

a Pulsed, pulse duration = 300 /us, duty 

" CAUTION: Sustaining voltages Vq E q 
a curve tracer. 



data format JS-6, 
factor < 2%. 
(sus), V^gpfsus), 



«J». 








































XLLECTOn CURRENT (Ic> • 1 A 


g 2 

o 2 




















CASE TEMPERATURE ITc)-2S*C 




























































































































































































10 




















































































































































































t 





FREQUENCY (t)-MMZ 



Fig. 5 - Typical small-signal current 
gain for all types. 




■ASf -TO-EWTTER VOLTAGE ( V K > —V 

92CS-S 

Fig. 6 - Typical input characteristics 
for all types. 




COLLECTOR-TO-EMITTER V0LTA8E WcE>— V 



Fig. 7 - Typical output characteristics 
for all types. 



and V CEV (sus) MUST NOT be measured on 



243 



POWER TRANSISTORS 



2N6534-2N6537 

ELECTRICAL CHARACTERISTICS, At Case Temperature (T c ) = 25°C unless 

otherwise specified 



CHARACTERISTIC 
SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6536 


2N6537 


V C E 


VBE 


'c 


'b 


Min. 


Max. 


Min. 


Max. 


'ceo 


120 
100 










- 


1 


- 


1 


mA 


'CEV 


120 
100 


-1.5 
-1.5 






- 


0.5 


- 


0.5 


T c = 150°C 


120 
100 


-1.5 
-1.5 






- 


5 


- 


5 


'ebo 




-5 







- 


5 


- 


5 


mA 


b FE 


3 
3 
3 




3 a 
5 a 
8 a 




1,000 
100 


10,000 
5,000 


1,000 
100 


10,000 
5,000 




V CE0 (sus) 






0.2 





100 b 


- 


120 b 


- 


V 


V CER (sus) 

R BE = 100 n 






0.2 




100 b 


- 


120 b 


- 


V CEV (sus) 




-1.5 


0.2 




100 b 


- 


120 b 


- 


V B E 


3 
3 
3 




3 a 
5 a 
8 a 




- 


2.8 
4.5* 


- 


2.8 
4.5* 


V 


V CE (sat) 






3 a 
5 a 
8 a 


0.006 
0.01 
0.08 


- 


2 
3* 


- 


2 
3* 


V 


v F 






53 
S 3 




_ 


5 


_ 


4 


V 


h fe 

f = 1 kHz 


5 




1 




1,000 


- 


1,000 


- 




l h fe| 

f = 1 MHz 


5 




1 




20 


- 


20 


- 




C obo 

V CB = 10 V 
f = 1 MHz 










- 


200 


- 


200 


pF 


'S/b 
t=1 s, 

nonrep. 


34 








1.06 


- 


1.06 


- 


A 


E S/b 

L= 12mH 
R BE = 100ft 




-1.5 


4.5 




120 


- 


120 


- 


mJ 


R 0JC 










- 


3,5 


- 


3.5 


°C/W 



In accordance with JEDEC registration data format JS-6, 

a Pulsed, pulse duration = 300 jus, duty factor < 2%. 

"CAUTION: Sustaining voltages V ce q(sus), VcER' sus '' 
on a curve tracer. 



u 7 

\ 6 

o 

i 
i 


























1 1 1 1 1 1 1 1 1 1 1 1 1 1 Ve ■ '•< 

1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 I T <= • ° 


XX) + 














Ull \\ ]\\ 1 1 1 1 1 1 if 1 1 1 [ 1 1 l^ffl-typr'pyy," - 

1 1 1 1 1 1 1 1 1 1 i 1 1 1 1 1 1 1 1 l^fi l ff'1T| h rc'' °' "" 












-U-|T C .25'C-- 



















Fig. 8 - Typical saturation characteristics 
for all types. 





COLLECTOR-TO-EMITTER VOLTAGE (V CE )-3V 1 


i *' 


■ :: 1i 


150 

I o.s 

1 IOO 
E 

i 75 
1 " 

8 

25 

o 






























■ 














"1 








WWiW: 




T-- 


ii 








Vi I Uy 










IM 














*«° 11 \ 1 II 1 1 II r 




- - 4- ■■ 


<gj 






| l>/Ht)f 
























::£: 







BASE-TO-EMITTER VOLTAGE (V K )—V 

Fig. 9 - Typical transfer characteristics 
for all types. 



5 
3 3 

i 

2 

O 


COLLECTOR SUPPLY VOLTAGE IV CC )' 


iov 












VV Ic ' 500 
























N 


































- 


















/'""" 




^ 








y 






r 






'^ 


< 


^ 


















\ 




















s 







































COLLECTOR CURRENT (I,.) — A 



5 G 7 8 9 10 



Fig. 10- Typical saturated switching-time 
characteristics for all types. 



and V^gylsus) MUST NOT be measured 



244 



POWER TRANSISTORS 



2N6534-2N6537 



106 

8 
6 

4 
2 

1\ 



2 6 

(- 
Z 

IT 
O 
(£ 
O 2 

O 

UJ 

_l 
-J 

1 

8 
6 

4 
2 

0.1 


CASE TEMPERATURE (Tc)« 25 °C itffllllll llllllfc 
(CURVES MUST BE DERATED LINEARLY --Milllllllll 1 lIHlil 




n 






WITH INCREASE IN TEMPERATURE) 


IUJij|l|jyillli|tik 










51 j! 


m 7 






:[:: 








L,JiliiB 












3 ■! 
-|in 


^ 






























■I:: 










J^3---|g^gj 


1 i |Mjjillm| rT|iff|p 












--T j:l 


4# 


1. 










! tt +H"4 l ff4 
















* 
PULSED OPERATION 




Ejj Ic (MAX.) ; 




4j ] PULSED ■■ 

+L!4-i;;;;|!,::i;::: 
*7Ic(max.): 


tS 












rt m! 




















■+* jttJ 












Sx 




























3 a J 3 








pi 


"H 




■ [■■I II- 4- j 


1 CONTINUOUS — ii3 




iB^?fffiWiTtiiiiir 










iilil II + t 


a,> !-! 


iiri 






:■ 50m$3i j 


a£ V^*\w\WtmMH\\m 






$K* 






3 : :■: 












PffiiMftffllllllllff 




li 






Ipgii 






::;i 


■■■■: 






1 


^ ^WUJI ilMlWHJJIIilli 


jjjjip 


S^E 


H 






r * FOR SINGL 
? NON-REPE 
: PULSE 


E 
TITIVI 


°<*Np>ll 




n:':l 


: i ; . 






1" 




4i 


P&i 














-iii 


}--4jLi-i-a4itm ''iijJvauBiiuudiiuji- 






































-t-ii 


^-r 












"H { 


liH+SgSS 


* jiUffllfflfflKflffi 




til 




















e-*n 






fftfjjp 


~y 
















:r: : 




■:::x-i 




Hn jj#|fftll!wl\rtfglt 






















V^c/% (MJ 


kx unnu (9h 




M44-|-|4j4 p 






















:V CE0 (MAX.)=I00V{|^ 






nH 




















6536 |j..!l||||lfflr 




11 










n 


;tr 






ILL 


V CE0 (MAX.M20 V(2N6537 ) -|l!|!| 1 \\\W 
•-i-r Itt ti'iniiiiiiitttttlittll Htttmitiiiillllllll 


tnttmpifc 

11 1 1 1 1 1 i Tffl ttt) 











1 10 too 1000 

COLLECTOR-TO-EMITTER VOLTAGE (V CE ) —V 92CS-24606RI 

Fig. 1 1 • Maximum operating areas for all types at case temperature of 25 C. 



92CS-24608RI 




10 IO0 

COLLECTOR -TO-EMITTER VOLTAGE (V CE ) — V 
Fig. 12 - Maximum operating areas for all types at case temperature of 100 C. 



245 



POWER TRANSISTORS. 



2N6542. 2N6544, 2N6546 

3-, 5-, and 10-A Power- Switching Transistors 

High-Voltage N-P-N Types for Off- Line Power Supplies and Other High- 
Voltage Switching Applications 

The RCA-2N6542, 2N6544, and 2N6546 tested for parameters that are eassential to 

series of silicon n-p-n power transistors the design to high-power switching circuits, 

feature high-voltage capability, fast switching Switching times, including inductive turn-off 

speeds, and low saturation voltages, together time, and saturation voltages are characterized 

with high safe-operating area (SOA) ratings. at 100°C;as well as at 25°C, to provide infor- 

They are specially designed for off-line mation necessary for worst-case design, 

power supplies, converter circuits and pulse- The 2N6542, 2N6544 and 2N6546 tran- 

width-modulated regulators. These high-volt- s istors are supplied in steel JEDEC TO-204MA 

age, high-speed transistors are 100-per-cent hermetic packages. 

MAXIMUM RATINGS, Absolute-Maximum Values: m% ^ 2 2Ng544 2N654g 

* V CB0 650 V 

* V CEV 

V B£ = -1.5V 650 V 

* V CEX (Clamped) 

V BE = -1.5V 350 V 

* V CEQ 300 V 

* V EBO 9 V 

l c (sat) 3 5 10 A 

* l c 5 8 15 A 

l CM 10 16 30 A 

* l B 5 8 10 A 

* P T 

T c upto25C 100 125 175 W 

T c above 25°C, derate linearly 0.57 0.714 1 W/°C 

* T, tn ,T, -65 to 200 °C 

* T L 9 

At distance ^1/8 in. (3.17 mm) from seating 

plane for 5 s max 275 C 

* In accordance with JEDEC registration data. 




io * - ' "ibo * 

COLLECTOR-TO-EIMTTEn VOLTMC(V CE >- V 

Fig. 1 — Maximum operating areas for type 
2N6542 (T c = 25° C). 



Features: 

■ 100% High Temperature Tested for 
100°C Parameters 

■ Fast Switching Speed 

■ High Voltage Rating: 
V CEX = 350 V 

■ Low V CE (sat) at l c = 3-, 5-, and 10-A 

■ Steel Hermetic TO-204MA Package 

Applications: 

■ Off-Line Power Supplies 

■ High Voltage Inverters 

■ Switching Regulators 



TERMINAL DESIGNATIONS 




JEDEC TO-204MA 







I 




% 








f 5 








Is 

1 90 




s 


Mil 


29 






Mjj^B ! 





29 90 79 


100 


129 00 179 200 229 29 



CASE TEMPERATURE <T C )— *C mm-2 

Fig. 2 — Dissipation and l§/ b derating curves 
for all types. 



* 






















S^ t j 


MAX. -2 


oo*c 
















■^>v 


N^ 


f x 
















\ 






^ 


«J 




>?, 








10 


in 


V 








*%§£ 


^ 







NUMBER OF THERMAL CYCLES 

Fig. 3 — Thermal-cycling chart for 
type 2N6542. 



246 



, POWER TRANSISTORS 



2N6542, 2N6544, 2N6546 



ELECTRICAL CHARACTERISTICS 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


Unit* 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6542 


2N6544 


2N6546 


V C E 


V B E 


'c 


>B 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 



T C = 2?C 



'CEV 


650 


-1.5 






- 


0.5 


- 


0.5 


- 


1 


mA 


'EBO 




-9 









1 


- 


1 


- 


1 


V CE0 (sus)b 






0.1" 




300 


- 


300 


- 


300 


- 


V 


hFE 


2 
2 
3 
3 
2 
2 




3a 
1.5a 

5a 
2.5a 
10a 

5a 




7 
12 


35 
60 


7 
12 


35 
60 


6 
12 


30 
60 




V BE (sat) 






3a 

5a 

10a 


0.6 
1 
2 


— 


1.4 


— 


1.6 


- 


1.6 


V 


V CE (sat) 






3a 

5a 

8a 

10a 

15a 


0'6 
1 
2 
2 
3 


- 


1 
5 


- 


1.5 
5 


- 


1.5 
5 


'S/b t = 1 s 


100 








0.2 


- 


0.2 


- 


0.2 


- 


A 


f T f = 1 MHz 


10 
10 
10 




0.2 
0.3 
0.5 




6 


28 


6 


28 


6 


28 


MHz 


C obo f = 1 MHz 


10d 








50 


200 


75 


300 


125 


500 


pF 


td e 






3 

5 

10 


0.6 
1 
2 


- 


0.05 


- 


0.05 


- 


0.05 


A« 


<r e 






3 

5 

10 


0.6 
1 
2 


- 


0.7 


- 


1 


- 


1 


<s e 






3 

5 

10 


0.6 
1 
2 


- 


4 


— 


4 


- 


4 


t f » 






3 

5 

10 


0.6 
1 
2 


- 


0.8 


- 


1 


: 


0.7 



100 










































» 














1 ' 


\ 


'Nfr 










EK DISSIPATION (P, 

1 i 


* \ ^ 


'"N* 


\ 








■ \ 




t% 








- \ 












1 

10 


V\ 


\\ 


\ 


V 


V 





NUMSER OF THERMAL CYCLES »2CS-2»023 



Fig. 4 — Thermal-cycling chart for 
type 2N6544. 




• • 10 4 t 4 • • K>» 

NUMMR OP THERMAL CYCLES 

•IC>- 

Fig. 5 — Thermal-cycle rating chart for 
type 2N6S46. 



t 

i 1 

* • 

II" 

a 
0.1 



































































































PULSE WBTM (lp)-t „,.,.„, 

Fig. 6 — Typical thermal-response characteristic 
for types 2N6S42 and 2N6S44. 



*• 

e 

1 * 

s 4 

9 2 
f ai 

8 : 




























































































































































































































/' 
























' 






















/ 
























1 

a« 


/ 


































_ 















• •l 4 «8 t 4 • • t «(■ 

ww aoi ai 1 id 

PULSE WIDTH (V — • ttCt-MMT 

Fig. 7 — Typical thermal-response characteristic for 
type 2N6S46. 



.247 



POWER TRANSISTORS . 



2N6542, 2N6544, 2N6546 



ELECTRICAL CHARACTERISTICS 




















CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


Units 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6542 


2N6544 


2N6546 


V C E 


V B E 


'c 


>B 


Min. 


Max. 


Min. 


Max. 


Min. 


Ma*. 





T c = 100° C 
























* 


'CEV 


650 


-1.5 






- 


2.5 


- 


2.5 


- 


4 


mA 


* 


'CER RBE = 5on 


650 








- 


3 


- 


3 


- 


5 


* 


V CEX (sus)b.c 
V cc = 20 V 
L=180juH, 
R c = 0.05J2 

v clamp = Rated 
V CEX 






2.6» 

4.5a 

8a 




350 


- 


350 


- 


350 


- 


V 




v clamp = Rated 

v CEO -ioov 






5a 

8 a 

15a 




200 


- 


200 


- 


200 


- 


* 


V BE (sat) 






3a 

5a 

10a 


0.6 
1 
2 


- 


1.4 


- 


1.6 


— 


1.6 


V 


* 


V CE (sat) 






3a 

5a 

10a 


0.6 
1 
2 


- 


2 


- 


2.5 


- 


2.5 


* 


ts f 




-5 
-5 
-5 


3 

5 

10 


0.6 
1 
2 


— 


4 


- 


4 


- 


5 


/us 


* 


tf f 




-5 
-5 
-5 


3 

5 

10 


0.6 
1 
2 


: 


0.8 


- 


0.9 


- 


1.5 


* 


r »jc 










- 


1.75 


- 


1.4 


- 


1 


°C/W 



* In accordance with JEDEC registration data. 

* Pulsed: pulse duration = 300 /is, duty factor <2%. 
b CAUTION: The sustaining voltage V^ E q(sus) 

and V CEX (sus) MUST NOT be measured on a 
curve tracer. 



c V cc = 20 V, L = 180 >xH, R c = 0.05 n 
** Vqb value 

• Resistive load, V cc = 250 V, t p = 100 jus, 

"l "2 

* Inductive load, V c | amp = Rated V CEX (sus), 

l B = -l c /5, L = 180 nH, R c = 0.05 n, V cc = 20 V 



:nar 

t • 

2 * 

2 , 

4 

•- Z 

z 
tc 
V 10 

1 ' 

§ • 

O 4 


COLLECTOR- T0- 


EMITTER VOLTAGE <V CE )'2V 


















































( 


ASE 


** 


5 








































































































< 




S 


1 








1 





COLLECTOR CURRENT ttcl-A g2C s-J0SJ0 

Fig. 8 — Typical dc beta characteristics for 
type 2N6542. 



200 
O 

«ioo 

< • 


$ 10 


COLLECTOR-TO-EMITTER 
VOLTAGE (Vcgl-SV 








































































sJJS'C 




















25-cS 










CASE TEMPERATURE 


<T C I- 


-40*C" 



















































COLLECTOR CURRENT (I c )-A nes-mn 

Fig. 9 — Typical dc beta characteristics for 
type 2N6544. 



-|S6- 

1 ' 

5 6 

< 
a 

H 2 

z 
<r 

10 

I 8 

6 


COLLECTOR - TO - EMITTER VOLTAGE (V CE ) ■ 3 V 




























V 




















_£^C 


S 


*> 


'cj 


















-40 -C 








c 







































































COLLECTOR CURRENT ( Ic) — A 92CS- 30383 

Fig. 10 — Typical dc beta characteristics for 
type 2N6546. 



1 

z 
o 6 

< 

si* 

i> i 

gSoi 

O t 


I B -I C /5| 














i 

T C --40'C 








T C .I2S 
T c -25 


•C 
•C 












J5^> 










O-ts^ 


^ 





























COLLECTOR CURRENT (I c )-A »2CS-2»9s: 

Fig. 11 — Typical collector-to-emitter saturation 
voltage as a function o f collector cur- 
rent for types 2N6S42 and 2N6544. 



16 

o M 

< 

K |2 

St, 

15° 
f I 

igOJ 

I 8 - 

8 tt2 


18,10/5 ^^^^^^^^^^^^ffi 

■ i 






IMM? 






T^ 




■c|ff 




j\ 
















eratniiitis 




t! 


irnl 



COLLECTOR CURRENT (I,.) — A 



F/fl". 12 — Typical collector-to-emitter saturation 
voltage characteristics for type 2N6546. 



<> 2 
3 I 

K >, 
X ui 

4 


I B -I C '5| 














-iO'C . 








CASE 


" 2£^Si. 

^tsnuRtTfcT 


-"-Jc 

































COLLECTOR CURRENT (I c ) — A »2M-2»te« 

F/</. 13 — Typical base-to-emitter saturation voltage 
as a function of collector current for 
types 2N6542 and 2N6544. 



248 



POWER TRANSISTORS 



2N6542, 2N6544, 2N6546 




10 100 

COLLECTOR-TO-EMITTER VOLTAGE <V C J -V 

vt 92CM-30533 

Fig. 14 — Maximum operating areas for type 2N6546 (Tq = 25 C). 




'I0 * * s 8 l6b 2 

COLLECTOR-TO-EMITTER VOLTAGE { V c E ) - V 

Fig. 15 — Maximum operating areas for type 
2N6544 (T c = 25° C). 



92CM-3053I 



4 

< 

> 

*> 
•= I 

2 Si 
, > 

o~ 8 


COLLECTOR -TO-EMITTER 
VOLTAGE (V C e)" 3 V 




























_»0 

' M 

FuSTrtc^ 




















m 


-3*t^»» 





































COLLECTOR CURRENT ( itf — A 92cs . 2 . 

Fig. 16 - Typical base-to-emitter voltage as 
a function of collector current for 
types 2N6542 and 2N6544. 



4 
O 

SI 

?« I 

8f § 8 
3 

0.4 


i B "- I C 


C5 


























F^ 








-40*0^ 






i0 


,\C 


U 








"SFc" 












C** 



















I * ' " " 10 ' ' " 100 

COLLECTOR CURRENT(Ic>— A 92CS-30376 

Fig. 17 — Typical base-to-emitter saturation 
voltage characteristics for type 
2N6S46. 




COLLECTOR-TO-EMITTER VOLTASE (V CE )— V 92c < 

Fig. 18 — Typical output characteristics for 
types 2N6542 and 2N6544. 




COLLECTOR-TO-EMITTER VOLTAGE (V CE 1— V 

9ZCS- 30374 

Fig. 19 — Typical output characteristics for 
type 2N6546. 

249 



POWER TRANSISTORS. 



2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E 
Silicon P-N-P Epitaxial-Base High-Power Transistors 

Features: 



They differ in voltage ratings and in the 
currents at which the parameters are con- 
trolled. All are supplied in the steel JEDEC 
TO-204MA packages. 



Rugged Devices, Broadly. Applicable 
For Industrial and Commercial Use 

The RCA-2N6609, MJ15004, RCA9116C, 
RCA9116D, and RCA9116E are ballasted 
epitaxial-base silicon p-n-p transistors featur- 
ing high gain at high current. They may be 
used as complements to the n-p-n types 
RCA3773, MJ15003, RCA8638C, RCA 
8638D, and RCA8638E, respectively. 



MAXIMUM RATINGS, Absolute-Maximum Values: 

2N6609 MJ15004 RCA9116C RCA9116D RCA9116E 

* V CB0 -160 -140 -140 -120 -100 

Vq ex (sus) 

V BE = -1.5 V; R BE = 100 fi . . -160 - - 

V CER (sus) 

R BE = 100n -150 -150 -150 -130 -110 

* v CE0 (sus) -140 ~ 140 _140 ~ 120 ~ 100 

* V EBO " 7 ~ 5 — — - 

* l c -16 -20 

* 'B ■ - - 4 5 

* P T 

AtT c >25C 150 250 200 200 200 

AtT c >25°C Derate linearly 0.857 1.43 1.14 

* T st Tj 65 to 200 

* T L 

At distance ^1/32 in. (0.8 mm) from 

seating plane for 10 s max. . 265 230 

* 2N-type in accordance with JEDEC registration data format JS25RDF1 , Issue 1 . 



W 
W/°C 



■ High-dissipation capability 

■ Low saturation voltages 

■ Maximum safe-area-of-operation curves 

■ f T = 2 MHz 

■ High gain at high current 



Applications: 

■ Series and shunt regulators 

■ High-fidelity amplifiers 

■ Power-switching circuits 

■ Solenoid drivers 

TERMINAL DESIGNATIONS 




JEDEC TO-204MA 



-100, 

6 
4 

2 

< 
1 

X>H0 
M S 

z 6 

£ ♦ 

S * 

j -1 

8 9 

6 

4 

2 


CASE TEMPERATURE (T C )-25'C 1 
(CURVES MUST BE DERATED UNEARLY|IS||I1 
WITH INCREASE IN TEMPERATURE) Hill 








Xc (MAX 1 CONTINUOUS | 








































v 


Q^j^MiJI In 


































V* 










m 


s 


rrfl 


IB 1 


im 


fit' 














-V:\ 






nrl 














~~ 




rrr? 








■B^^^ 


















M| 


' TE 


IP 


p 






































:•:: 














^yvjiiiiiiisui 
































'liililiihl"** 




































.c^Hi 








• RCA9II6C 














B 














'■* WUIIHffl 


LSCAsiwDjBL 
I RCA?l'J6E°B- 




























i^B 














:■;=■: 
























-• r 










'm 




iffl 












| - v cFn 


MAX-I40V 










;; V CE0 MAX.' 120 V (RCA9II60) 




j(2N«6< 


M.MJI90O4, 






V CE0 MAX> I00V(RCA9II6E): 




ISSTSIH 


00 








2 






1 


■ «. 







! 


< 




6 S.ic 


>l< 


2 






« 6 


?* 



COLLECTOR-TO-EMITTER VOLTAGE (V CE )-V 

^ 92C! 

Fig. 1 — Maximum operating areas for all types. 



1000$ 
1 » 

It 4 

o 

5 2 

K 

Sioo 
i. a 
z * 
1 " 

s 2 

• 

1 * 

1 2 

£ i 
















R V 
















COLLECTOR-TO 














1~ 






























































12! 


• 












































EMPERATURE 


_H 








— 


- 






1T C )-25'C^ 






^s 


' 






















k> 


















































r- 







































































































































COLLECTOR CURRENT (I. c )-A 92CS30077 

pjg m 2 — Typical dc beta characteristics as a function 
of collector current for all types. 



250 



POWER TRANSISTORS 



2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E 



ELECTRICAL CHARACTERISTICS, at Case Temperature (T C )=25°C Unless Otherwise 
Specified 



CHARAC- 
TERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CUR- 
RENT 
Adc 


2N6609 


MJ 15004 


VCE 


V B E 


«C 


Min. 


Max. 


Min. 


Max. 


'CBO 


-1608 
-140" 






- 


-4 
-2 


- 


-1 


mA 


'CEX 


-140 


1.5 




- 


- 


- 


-0.1 


'CEX 
T c = 150°C 


-140 


1.5 




- 


- 


- 


-2 


'CEV 


-140 


1.5 




- 


-2 


- 


- 


'CEV 
T c = 1 50°C 


-140 


1.5 




— 


-10 


— 


- 


'CEO 
l B =0 


-140 
-120 








-10 


; 


-0.25 


"EBO 


-7 
-5 






- 


-5 


- 


-0.1 


hFE 


-4 
-4 
-2 
-2 




-8C 
-16C 

-5C 
-10C 


15 
5 


60 


25 
10 


150 




V CEX (sus)b 
R BE =100f2 




1.5 


-0.2 


-160 


- 


- 


- 


V 


V CER (sus)b 
R BE < loon 






-0.2 


-150 


- 


-150 


- 


V CE0 (sus)b 






-0.2 


-140 


- 


-140 


- 


v EBO 
l E = -1 mA 









-7 


- 


-5d 


- 


V B E 


-4 
-2 




-8C 
-5C 




-2.2 




-2 


V CE (sat) 
l B = -3.2A 
= -0.8A 
= -0.5A 






-16<= 
-5C 


- 


-4 
-1.4 


- 


-1 


'S/b 
t p = 1 s 

nonrep. 


-100 
-50 






-1.5 


- 


-1 
-5 


- 


A 


Ih fe l 
f = 0.05 
= 0.5 MHz 


-4 
-10 




-1 
-0.5 


4 
4 


- 


4 


- 




*T 








2 


- 


2 


- 


MHz 


h fe 
f=1 kHz 


-4 




-1 


40 


- 


- 


- 




c ob 
f = 0.1 MHz 


-108 






- 


1000 


- 


1000 


pF 


R 0JC 


-10 




-10 


- 


1.17 


- 


0.7 


°C/W 



1 -3 

o 

1 -25 


i 




UtiH 


























it j| | fflffffffffffff In lii W 


























mmtrnrmtii 1 till It Irmrr-*' lirfttttt 






~Jm 






^* 






V 














O -1 

B -° 5 




^tPMW lifflf=^- f 


■itjraffiS 








Mw MtiMP^.itii 








iHW/ttfHttttltffTfffi c -tfttrffiF 














8 











-4 -6 -8 -10 -12 -14 

COLLECTOR CURRENT (I c )-A 92CS-3O078 



Fig. 3 — Typical saturation voltage characteristics 
for all types. 




-0.2 -0.6 -I -1.4 -1.8 -22 -2.6 

BASE-TO-EMITTER VOLTAGE (V BE )-V MCS-30081 



Fig. 4 — Typical input characteristics for all types. 



-12 
f -10 


COLLECTOR-TO-EMITTER VOLTAGE (V CE I 


-2v|||||||||ffl 


















X -8 












It 


lllllllllllllllllllllll^m^itM 




° "« 


||||||||||||||||||| i: ^ty <0 J^MlliM 










§ -4 
O 

-2 


I' If ill 

m ^ifffllllllllllllllllllllllm 







^^^^^^^^^^^^S 







Fig. 5 — Typical transfer characteristics for all types. 





COLLECTOR SUPPLY VOLTAGE ( Vcc>- 


-30V IIIIIHIIHI 


* 


-In-Ibj. I/IO Ic 




X 


CASE TEMPERATURE (T C )-29*C 








s 












S 16 
























a i.2 












3 


1 Itlitri^ ifitttfnttt 1 




1 0.8 










































11 






c 


-2 -4 -6 -8 -10 


-12 



See page 252 for footnotes. 



COLLECTOR CURRENT (I c )-A 92CS-: 



Fig. 6 — Typical saturated-switching times for 
all types. 



251 



POWER TRANSISTORS. 



2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E 

ELECTRICAL CHARACTERISTICS, at Case Temperature (T c ) = 25°C 
Unless Otherwise Specified (Cont'd) 



CHARAC- 
TERISTIC 


TEST CONDITIONS 






LIMITS 






UNITS 


VOLTAGE 
Vdc 


CUR- 
RENT 
Adc 




RCA9116C 


RCA9116D 


RCA9116E 


V C E 


V B E 


•c 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


'CBO 


-140a 
-120a 
-100a 






- 


-1 


- 


-1 


- 


-1 


mA 


'CEX 


-140 
-120 


1.5 
1.5 




- 


-1 


- 


-1 


- 


- 


'CEX 
T C =150°C 


-140 
-120 


1.5 
1.5 




- 


-5 


- 


-5 


- 


_ 


'ceo 

l B = 


-70 
-60 






- 


-1 


— 


-1 


- 


- 


'ebo 


-5 






- 


-1 


- 


-1 


- 


-1 


h F E 


-2 
-2 
-2 




-5C 
-7.5C 
-10C 


25 
10 


150 


25 
10 


150 


10 


100 




V CER (sus)b 
R BE <100O 






-0.2 


-150 


- 


-130 


- 


-110 


- 


V 


V CE0 (sus)b 






-0.2 


-140 


- 


-120 


- 


-100 


- 


v EBO 
l E = -1 mA 









-5 


- 


-5 


- 


-5 


- 


V B E 


-2 
-2 




-7.5C 
-5C 


- 


-2 


- 


-2 


- 


-3 


V CE (sat) 
l B = -0.75A 
= -0.5A 






-7.5C 
-5C 


- 


-1 


- 


-1 


- 


-1.5 


'S/b 
t p =1s 
nonrep. 


-35 
-25 






-5.71 


- 


-5.71 


- 


-8 


- 


A 


Ih fe | 
f = 0.5 MHz 


-10 




-0.5 


4 


- 


4 


- 


4 


- 




*T 








2 


- 


2 


- 


2 


- 


MHz 


C ob 
f = 0.1 MHz 


-10a 






- 


1000 


- 


1000 


- 


1000 


pF 


R 0JC 


-10 




-10 


- 


0.875 


- 


0.875 


- 


0.875 


°C/W 



* 2N-types in accordance with JEDEC registration data format JS25 RDF1 , Issue 1 . 

3 V CB b CAUT, ON: Sustaining voltages V CEX (sus), V CER (sus), and c Pulsed; pulse duration = 300 us, 

V CE q(sus) MUST NOT be measured on a curve tracer. duty factor = 1 .8%. 

d Measured at l c = —0.1 mA. 



252. 



POWER TRANSISTORS 



2N6648, 2N6649, 2N6650, RCA8350, RCA8350A, RCA8350B 



10- Ampere P-N-P Darlington Power Transistors 



40-60-80 Volts, 70 Watts 
Gain of 1000 at 5 A 



The 2N6648, 2N6649, 2N6650, and 
RCA8350, RCA8350A, RCA8350B* are 
monolithic silicon p-n-p Darlington tran- 
sistors designed for low- and medium-fre- 
quency power applications. The high gain 
of these devices makes it possible for them 
to be driven directly from integrated cir- 
cuits. The 2N6648 and RCA8350 are 
complementary to the 2N6383; the 
2N6649 and the RCA8350A are comple- 
mentary to the 2N6384; and the 2N6650 
and RCA8350B are complementary to the 
2N6385. 



They are all supplied in hermetic steel 
JED EC TO-204MA packages. 

Q c 



Features: 

■ Operates from IC without predriver 

■ High reverse second-breakdown capability 
Applications: 

■ Power switching ■ Audio amplifiers 

■ Hammer drivers 

■ Series and shunt regulators 

TERMINAL DESIGNATIONS 



< 




o 



o 



.J 



JEDEC TO-204MA 



* Formerly RCA Dev. Nos. TA8351 , TA8488, and 
TA8350, respectively. 

MAXIMUM RATINGS. 

Absolute-Maximum Values: 



6e 



Fig. 1 — Schematic diagram for all types. 



'CBO 



;Er(sus) 
R BE = 100« 



j(sus) 
/(sus) 



T c < 25°C 

T c > 25°C Derate linearly 



2N6648 
RCA8350 

-40 

-40 
-40 

-40 
-5 
-10 
-15 
-0.25 

70 



'stg< 'J 



2N6649 
RCA8350A 

-60 

-60 
-60 



-5 
-10 
-15 
-0.25 

70 

0.56 _ 

-65 to +150 



At distances > 1/32 in. (0.8 mm) from 
seating plane for 10 s max 



235 



In accordance with JEDEC registration data format (JS-6 RDF-4) 



4 

-15 

-K> 

B 

4 
1 2 

1 ■-. 
5 ' 

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2 


CASE TEMPERATURE <T C )*2S*C WK 
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Fig. 3 — Maximum operating areas for all types. 



2N6650 
RCA8350B 

-80 

-80 
-80 

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-5 
-10 
-15 
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70 



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Fig. 2 — Thermal-cycling rating chart tor 
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92CM-30733 

F/gr. 4 — Maximum operating areas for all types at Tq= 100 C. 



253 



POWER TRANSISTORS 



2N6648, 2N6649, 2N6650, RCA8350, RCA8350A, 

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)=25°C Unless Otherwise Specified 



RCA8350B 



CHARACTERISTIC 


TEST CONDITIONS 






i imitc 






UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 




2N6648 
RCA8350 


2N6649 
RCA8350A 


2N6650 
RCA83508 


V C E 


VBE 


ic 


■b 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


'CEO 


-40 
-60 
-80 













-1 




-1 




-1 


mA 


'CEV 


-40 
-60 
-80 


1.5 
1.5 
1.5 






r=~ 


-0.3 


- 


-0.3 


- 


-0.3 


Tc= 150°C 


-40 
-60 
-80 


1.5 
1.5 
1.5 






- 


-3 


- 


-3 


- 


-3 


'EBO 




5 







- 


-10 


- 


-10 


- 


-10 


mA 


VcEO(sus) 






-0.2a 





-40 


- 


-60 


- 


-80 


- 


V 


VCER(sus) 

rbe = 100 n 






-0.2a 




-40 


- 


-60 


- 


-80 


- 


VcEV(sus) 




1.5 


-0.2a 




'-40 


- 


-60 


- 


-80 


- 


hFE 


-3 
-3 




-5a 
-10a 




1000 
100 


20,000 


1000 
100 


20,000 


1000 
100 


20,000 




VBE 


-3 
-3 




-5a 
-10a 




- 


-2.8 
-4.5* 


- 


-2.8 
-4.5* 


- 


-2.8 
-4.5* 


V 


VcE(sat) 






-5a 
-10a 


-0.01a 
-0.1 a 


- 


-2 
-3* 


- 


-2 

-3* 


- 


-2 

-3* 


V 


VF 






10a 




- 


4 


- 


4 


- 


4 


V 


hfe 
f = 1 kHz 


-5 




-1 




1000 




1000 




1000 






Ihfel 

f = 1 MHz 


-5 




-1 




20 




20 




20 






Es/b 
L = 3mH, 

Rbe = 100 n 




1.5 


-4.5 




30 


- 


30 


- 


30 


- 


mJ 


'S/b 
t = 1 s, 
nonrep. 


-35 
-25 








-1 
-2.8 


- 


-1 
-2.8 


- 


-1 
-2.8 


- 


A 


R 0JC 










- 


1.75 


- 


1.75 


- 


1.75 


°C/W 



* In accordance with JEDEC registration data format (JS-6 RDF-4). 
a Pulsed: Pulse duration = 300 jus, duty factor = 1.8%. 



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COLLECTOR CURRENT del — A 



»2CS-20«40ftl 



Fig. 5 — Typical dc beta characteristics for 
for all types. 



lo* 

3 ', 

|io J - 

S 2 

J, 10- 

a 4 
i 


























































10LLECTOR-TO-EMITTER VOLTAGE <V C E> —'V 












CASE TEMPERATURE (T c >. 25*C 














































































































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r 


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Fig. 6 — Typical small-signal gain for all types 





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COLLECTOR-TO-EMITTER SATURATION VOLTAGE [vcEUolll-V 



Fig. / — Typical saturation characteristics 
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COLLECTOR-TO-EMITTER VOLTAGE 



Fig. 8 — Typical output characteristics for 
all types. 

254 



-IS 


COLLECTOR-TO-EMITTER VOLTAGE IVCE»— S V |44-1 1 1 1 1 1 1 - 




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SASE-TO-EMITTER VOLTAGE (Vfjjl— V 

S2CS-20B7MI 

Fig. U — Typical transfer characteristics for 
all types. 



1* 

u 

1 

a. o* 
1 
I o.« 

0.4 
OX 
9\ 


COLLECTOR SUPPLY VOLTAGE (V cc )-- 
lBrtK > IC/X>0,Tc-25 , C 


20V 


































sjt 


















^? 






















































_lr _ 



























COLLECTOR CURRENT (t c l— A 



t2CS- 20MARI 



Fig. 10 - Typical saturated switching-time 
characteristics for all types. 



POWER TRANSISTORS 



2N6666, 2N6667, 2N6668, RCA8203, RCA8203A, RCA8203B 



10- Ampere P-N-P Darlington Power Transistors 

40-60-80 Volts, 65 Watts 

Gain of 1000 at 3 A (2N6666, RCA8203) 

Gain of 1000 at 5 A (2N6667, 2N6668, RCA8203A, RCA8203B) 



The 2N6666, 2N6667, 2N6668, and 
RCA8203, RCA8203A, RCA8203B are 
monolithic silicon p-n-p Darlington tran- 
sistors designed for low- and medium- 
frequency power applications. The high 
gain of these devices makes it possible for 
them to be driven directly from inte- 
grated circuits. The 2N6666 and RCA 
8203 are complementary to the 2N6386; 
the 2N6667 and RCA8203A are comple- 
mentary to the 2N6387;and the 2N6668 
and RCA8203B are complementary to 
the 2N6388> 



•Formerly RCA Dev. Nos. TA8204, TA8487 and 

TA8203, respectively. 
^Technical data for 2N6386-2N6388*are given in 

RCA Bulletin File No. 610. 



These devices are supplied in the JEDEC 
TO-220AB straight-lead version of the 
VERSA-W ATT package 

Optional lead configurations are available 
upon request. For information, contact 
your nearest RCA Sales Office. 



r 



< 



< 



i 



QE 92CS-20863RI 

Fig. 1 — Schematic diagram for all types. 



Features: 

■ Operates from IC without predriver 

■ High reverse second-breakdown capability 

Applications: 

■ Power switching ■ Audio amplifiers 

■ Hammer drivers 

■ Series and shunt regulators 

TERMINAL DESIGNATIONS 

e 




BOTTOM VIEW *cs-27 5 „ 

JEDEC TO-220AB 



MAXIMUM RATINGS, Absolute-Maximum Values: 

2N6666 2N6667 2N6668 
RCA8203 RCA8203A RCA8203B 

v CBO -40 -60 -80 V 

V CER (sus) 

R BE = 100 ft -40 -60 -80 V 

V CE0 (sus) -40 -60 -80 V 

V CEV (sus) 

V BE = -1.5V -40 -60 -80 V 

* v EBO -5 -5 -5 V 

* 'c -8 -10 -10 A 

'CM -15 -15 -15 A 

* <B -0.25 -0.25 -0.25 A 

* P T 

T c < 25°C 65 65 65 W 

T c > 25°C derate linearly 0.52 W/°C 

* T stg- T J 65 to +150 °C 

T L . 

At distances s^ 1/8 in. (3.17 mm) 

from case for 10 s max ___^__ 235 — — — — ^_ °C 

•In accordance with JEDEC registration data format US-6 RDF-4). 



ago 

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VOLTACE APPLES OHUf 10 THE 0ISSIMTI0N- 
LMTED PORTION AND THE I %/b -LIMITED 






CURVE. DO NOT DERATE THE 
SPECIFIED VKLUE FOR I c MAX 








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100 


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ISO 




179 


20 



CASE TEMPERATURE (T c l- 



Fig. 2 — Derating curve for all types. 




4 s V * 4 * V * * ' \ 

NUMBER OF THERMAL CYCLES 

92CS-26424 



Fig. 3 — Thermal-cycling rating chart for all types. 



I * 

I 10* 

io z 


































































































































































































































V 






















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COLLECTOR CURRENT (I c )-A 



92CS-2M«5M1 



Fig. 4 — Typical dc beta characteristics 
for all types. 



I6« 










COLLECTOR CURRENT Itrl •-!* 






i : 

6; 










COL 
CAI 


LEC 

E 1 


TOR-TO-EM 
ZMPERATU 


ITTER VOLTA 
« (T C ).2S-C 


0E(V CE l— 5V 




































































































































3 , 

< * 

3 2 

J, io- 










































































































4 • 

a « 

2 

















































































FREOUENCYffl— MHl 



Fig. 5 — Typical small-signal gain 
for all types. 



255 



POWER TRANSISTORS 



2N6666, 2N6667, 2N6668, RCA8203, RCA8203A, RCA8203B 

ELECTRICAL CHARACTERISTICS, 4f Case Temperature (Tq) =25°C Unless Otherwise Specified 



CHARACTERISTIC 
SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6666 
RCA8203 


2N6667 
RCA8203A 


2N6668 
RCA8203B 


VCE 


VBE 


"C 


IB 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


'CEO 


-80 
-60 
-40 











- 


-1 


- 


-1 


- 


-1 


mA 


ICEV 


-80 
-60 
-40 


1.5 
1.5 
1.5 






- 


-0.3 


- 


-0.3 


- 


-0.3 


Tc = 1 25°C 


-80 
-60 
-40 


1.5 
1.5 
1.5 






- 


-3 


- 


-3 


- 


-3 


lEBO 




5 







- 


-10 


- 


-10 


- 


-10 


mA 


v CEO< sus ) 






-0.2a 





-40 


- 


-60 


- 


-80 


- 


V 


VcER(sus) 

rbe = ioon 






-0.2a 




-40 


- 


-60 


- 


80 


- 


VcEV(sus) 




1.5 


-0.2a 




-40 


- 


-60 


- 


-80 


- 


hFE 


-3 
-3 
-3 
-3 




-3a 
-5a 
-8a 
-10a 




1000 
100 


20,000 


1000 
100 


20,000 


1000 
100 


20,000 




VBE 


-3 
-3 
-3 
-3 




-3a 

-5a 
-8a 
-10a 




- 


-2.8 

■-4.5 


- 


-2.8 

-4.5 


- 


-2.8 
-4.5 


V 


VcE(sat) 






-3a 
-5 a 
-8a 
- 10a 


-0.006a 
-O.Oia 
-0.08a 
-O.ia 


- 


2 
-3 


- 


-2 

-3 


- 


2 
-3 


V 


VF 






8a 
10a 




- 


4 


.- 


4 


- 


4 


V 


hfe 
f = 1 kHz 


-5 




-1 




1000 




1000 


_ 


1000 


_ 




Ihfel 

f = 1 MHz 


-5 




-1 




20 




20 


._ 


20 


_ 




E s/b 
L = 3mH, 
RBE = 100 S2 




1.5 


-4.5 




30 




30 


- 


30 


- 


mJ 


IS/b 
t = 1 s, nonrep. 


-20 








3.2 




-3.2 


- 


-3.2 


- 


A 


R 0JC 




^ 






- 


1.92 


- 


1.92 


- 


1.92 


°C/W 



a Pulsed: Pulse duration = 300 ms, duty factor = 2%. 
*ln accordance with JEDEC registration data format 



(JS-6 RDF-4). 





COLLECTOR-TO-EMITTER VOLTAGE ( 


V CE )-3 V 4 : 


-15 

- -i0 

I" 75 

-J.S 




i 


She 






x ( 1 1 | 

gjft 

ait 

: Mill 







































BASE-TO-EMITTER VOLTAGE (Vbe'-V 

Fig. 6 — Typical input characteristics 
for all types. 



1 - 8 

1- -l» 
1 "' 2 

° -10 
° -8 
-J -6 
° -4 
-Z 


CASE TEMPERATURE (Ti-I-28'C ||||||||||ffffft 












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COLLECTOR-TO- EMITTER VOLTAGE 1V CE I— V 

Fig. 7 — Typical output characteristics 
for all types. 



256. 



POWER TRANSISTORS 



2N6666, 2N6667, 2N6668, RCA8203, RCA8203A, RCA8203B 



CASE TEMPERATURE (T C )«29*C 
(CURVES MUST BE DERATED LINEARLY 
WITH INCREASE IN TEMPERATURE) 




COLLECTOR-TO-EMITTER VOLTAGE (VCE>— V 



17.5 


COLLECTOR-TO-EMITTER VOLTAGE (V CE > —3 V 


i 4 ' 
ttf* 


\u\t 


15 

1 

1 '° 
I 7.5 






















































In' :r: 


































































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x 




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± — 



BASE-TO-EMITTER VOLTAGE (V BE I— V 



92CS - 24907RI 



Fig. 9 — Typical transfer characteristics for all types. 




COLLECTOR-TO-EMITTER SATURATION VOLTAGE [vce<mI)]-V 



Fig. 10 — ' Typical saturation characteristics 
for all types. 



Fig. 8 -^Maximum operating areas for all types of Tq - 25 C. 



CASE TEMPERATURE (Tq) ■ IOO*C 
I C (MAX.) PULSED 
(2N6666,7,8 .RCA8203A.B) 

LSE OPERATION 1 




-GO 
-K> -60 -KX> 

COLLECTOR-TO-EMITTER VOLTAGE (V CE ) — 



-1000 

92CM-30730 

Fig. 11 — Maximum operating areas for all types at Tq = 100 C. 



CASE TEMPERATURE <T C >-2S*C 

INDUCTANCE <L>-3mH 

BASE -TO- EMITTER RESISTANCE IR B 




Fig. 12 — Minimum values of reverse-bias second 
breakdown characteristic (Eg/b^ 
for all types. 



1.4 
1.2 

5. 0.8 

1 
Z 0.6 

0.4 

0.2 

0.1 


COLLECTOR SUPPLY VOLTAGE (V cc >-- 
lBClB2'IC'S00.Tc'25*C 


20V 


































>^f 


















^s. 






















































tr 































COLLECTOR CURRENT II C I— A 

92CS-208A 

Fig. 13 — Typical saturated switching-time 
characteristics for all types. 



257 



POWER TRANSISTORS. 



2N6669 



Epitaxial-Base, Silicon N-P-N VERSAWATT Transistor 



General-Purpose, Medium-Power Type for 
Switching and Amplifier Applications 

The RCA-2N6669* is an epitaxial-base silicon 
n-p-n transistor supplied in the VERSAWATT 
package. This transistor is intended for a 
wide variety of medium-power switching 
and amplifier applications such as series and 



shunt regulators, automotive voltage regu- 
lators, and driver stages for high-fidelity 
amplifiers. 

•Formerly RCA Dev. No. TA9105. 



MAXIMUM RATINGS, Absolute-Maximum Values: 



'CBO 



;25°C 
■■ 100°C 



At T c > 25°C Derate linearly 

T stg- T J 

T L (During soldering): 

At distance 0.1 25 in. (3.17 mm) from case 

for 10 s max 



40 


V 


30 


V 


5 


V 


10 


A 


4 


A 


1.4 


A 


40 


W 


16 


W 


0.32 


W/°C 


-65 to 150 


°C 



°c 



In accordance with JEDEC registration data format (JC-25 RDF-1 ). 



Features: 

■ Low saturation voltages 

■ Switching speed 



TERMINAL DESIGNATIONS 



BOTTOM VIEW 




JEDEC TO-220AB 



* 

1 

7- 2 
1 '° 

s . 

" 2 


P T (MAX.)<40W 












/A 


A% 








k 






^ 


~>/ \ 




^Cv 












3a& 








\ 


1 \ 


^\v\ 








V 


\\\ 






As 


V 


V 


vYK\ x 



NUMBER OF THERMAL CYCLES 



• 2CS-I100JRI 



Fig. 1 - Thermal-cycling rating chart. 




t 6 I 

COLLECTOR-TO-EMITTER VOLTAGE (V CE )-V 

92CM- 29997 



4 6 8| 2 30 4 • 8 

10 100 

COLLECTOR-TO-EMITTER VOLTA6E(V CE )- V 



Fig. 2 — Maximum operating areas at Tq = 25 C. 



Fig. 3 — Maximum operating areas at Tq- 100 C. 



258. 



POWER TRANSISTORS 

2N6669 



ELECTRICAL CHARACTERISTICS, Case Temperature (T C ) = 25°C 
Unless Otherwise Specified 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLl 
V 


rAGE 
dc 


CURF 
A 


IENT 


2N6669 


V C E 


v B e 


'c 


>B 


Min. 


Typ. 


Max. 


'ceo 


20 








- 


- 


0.1 


mA 


'CEV 


40 


-1.5 






- 


- 


0.1 


mA 


T c = 100°C 


20 


-1.5 






- 


- 


5.0 


'EBO 




5.0 






- 


- 


1.0 


mA 


V CE0 (sus) 






0.2 




30 


- 


- 


V 


V CER (sus) 
R BE = 50 ft 






0.2 




40 


- 


- 


*FE 


2 




5 a 




20 


- 


100 




V BE (sat) 






5 a 


0.5 


- 


- 


2.0 


V 


V CE (sat) 






5 a 
10 a 


0.5 
1.0 


_ 


_ 


1.0 
2.5 


V 


c obo 

V CB = 10 V, f = 1 MHz 










50 


_ 


150 


pF 


l h fe| ■ 
f = 1 MHz 


2 




0.5 




10 


- 


70 




'S/b 

t = 0.5 s, nonrepetitive 


25 
10 








1.0 
4.0 


_ 


- 


A 


td c 






5.0 


0.5 


- 


0.03 


0.05 


JUS 


tr C 






5.0 


0.5 


- 


0.2 


0.3 


ts C 






5.0 


0.5 


- 


0.3 


0.5 


tf c 






5.0 


0.5 


- 


0.3 


0.5 


R 0JC 


10 




4 




- 


- 


3.125 


°C/W 



*Minimum and maximum values and test conditions 
in accordance with JEDEC registration data format JC-25 RDF-1 . 
a Pulsed; pulse duration = 300 ais, duty factor ^ 2%. 



^CAUTION: The sustaining voltages 
V CEO (sus) and V CER (susl MUST NOT 
be measured on a curve tracer. 

c V rr = 30V,l B1 =-l o , 



jooo 8 

" 6 

< 

f I00- 

z 

I * 

o 10 






! 
































23- c 








sK 






































v*> 




















VX^A 




















'V. 


V 

c 




,. 












































i 


i 








5 


3 



COLLECTOR CURRENT (I r )-A 



Fig. 4 — Typical dc beta characteristics. 



28 

I » 
I 

It 20 
1 '• 

K 

* 12 
o 

* 

i 8 

3 4 




COLLECTOR-TO- 


EMITTER VOLTASE ( 


V CE> 


■ 2V 















































































































































































































































































































































































































2 468, 2 4 « 8 

COLLECTOR' CURRENT (I C )-A 98CS .50, M " 

Fig. S — Typical gain-bandwidth product. 





CASE TEMPERATURE! |1J|||||||||||||||||I||J|||||||II Mill MUUJJ 


T 5 


felli™!^^ 




Z 4 
o 3 


nBmnttttttlffllMmrrrff 111 lltil 1111*°'™^^ 


O 

S 2 


lllfllll 1 llllllllllmlllllllllllllllllllllll TO^^ffl 
ffT^t^WTTTTTTTTTTTT^TTTffffffTTTTTnHTTTnTTTTTI IMMIIMIIIIIH l'*y*- 1 "f "ti 


8 , 





10 12 

COLLECTOR-TO-EMITTER VOLTAGE (V CE )-V 92CS-: 

Fig. 6 — Typical output characteristics. 



? 10 

£ • 

K 

3 * 
1 

u 4 

8 

2 


ic „Wffl 

( FORCED lifE'li" 10 lllllllll 

W I'-mf 

■HI 








i^iiiia 












Fig. 7 — Typical saturation characteristics. 



BASE-TO- EMITTER VOLTASE IV BE )-V 



92CS- 30467 

Fig. 8 — Typical base-to-emitter saturation 
characteristics. 



600 

1 

2 
1- 

I 
i B0 


x ai 


-is 


i-° 


ic 






















































^ 






IrrTlTi Inn '■ H 




C 




i 


z 




I 4 E 6 7 8 • l< 



COLLECTOR CURRENT (I c )-A 92CS-30I6S 

Fig. 9 — Typical saturated switching 
characteristics. 



■ 259 



POWER TRANSISTORS. 



2N6671, 2N6672, 2N6673 

5-A OwHskMmt Power Transistors 



High-Voltage N-P-N Types for Off- Line Power Supplies and Other 
High-Voltage Switching Applications 



The RCA-2N6671, 2N6672, and 2N6673* 
Switch Max series of silicon n-p-n power 
transistors feature high-voltage capability, 
fast switching speeds, and low saturation 
voltages, together with high safe-operating- 
area (SOA) ratings. They are specially de- 
signed for use in off-line power supplies and 
are also well suited for use in a wide range of 
inverter or converter circuits and pulse-width- 
modulated regulators. These high-voltage. 



high-speed transistors are 1 0O-per-cent tested 
for parameters that are essential to the design 
of industrial high-power switching circuits. 
Switching times, including inductive turn-off 
time, and saturation voltages are tested at 
125°C, as well as at 25°C, to provide infor- 
mation necessary for worst-case design. 
The RCA-2N6671, 2N6672, and 2N6673 
series transistors are supplied in steel JEDEC 
TO-204MA hermetic packages. 



Formerly RCA8767, RCA8767A, and 
RCA8767B, respectively. 



MAXIMUM RATINGS, Absolute-Maximum Values: 

2N6671 

* V CEV 

V BE --1.5V 450 

* V CEX (Clamped) 

V BE --1.5V 350 

* v CEO 300 

* v EBO 

i c (sat) 

* »C 

„, 'cm 

! 'b ••• 

T c up to 25°C 

T c above 25°C, derate linearly _^_ 

:?r Tj — 

At distance > 1 /1 6 in. (1 .58 mm) from 

seating plane for 10 s max __^_ 

* In accordance with JEDEC registration data. 



550 



2N6673 



650 



400 
350 

H 


450 
400 


V 
V 
V 


R 




A 


«» 




A 


m 




A 


a 




A 


isn , 




W 


flM 




W/°C 


tn?00 




°C 



Features: 

■ 100% High-Temperature Tested for 
125°C Parameters 

■ Fast Switching Speed 

■ High Voltage Ratings: 
V CEX = 350 V to 450 V 

■ Low V CE (sat) at l c = 5 A 

■ Steel Hermetic TO-204MA Package 

Applications: 

■ Off- Line Power Supplies 

■ High-Voltage Inverters 

■ Switching Regulators 



TERMINAL DESIGNATIONS 




JEDEC TO 204MA 



i 
§ 

o 
Sioo 

& 

£ n 

8 

£ 50 

25 
















































































sMfcf 


j4J i J 1 1 

iJPg 

IPS 












> 





25 50 75 100 125 ISO ITS 200 225 250 
CASE TEMPERATURE (T c )— "C 

Fig. 1 — Dissipation and 1$^ derating curves for 
all types. 



t 

i 

IS 

la " 
H! 

ai 
































































































i 



200 
o 

K KX> 

z , 

K 
l-_ 

T 9 

s 
3 

1,0 

8 . 


COLLECTOR-TO-EMITTER 
VOLTAGE (V CE )-3V 








































































>J25*C 










CASE 










25*c"> 










TEMPERA 


TURE 


<T C 


) - 


-40"C" 
















































1 



PULSE WBTH (!,)-• 

•ZC3-2998I 

Fig. 2 — Typical thermal-response characteristic 
for all type*. 



COLLECTOR CURRENT (I c )-A 

Fig. 3 — Typical dc beta characteristics for all types. 



1 


Tj(MAX) 


200* C 




















> ,0 
























£ , 




N> 


^ 


















i 

t 4 






S 


5 


% 












I * 

8 

s 

•X 

i • 

to 




[NA 








^ 




s 








s 




. 














• 


4 


NUt 


1 
IBEI 


1 




■ 
1 

F 


„ 

r 

THERM/ 


IL CYC 


1 
-ES 


■ 


1 

1 


l« * 



ttct-so««« 

Fig. 4 — Thermal-cycling chart for all types. 



260 



. POWER TRANSISTORS 



2N6671, 2N6672, 2N6673 



ELECTRICAL CHARACTERISTICS 



CHARAC- 
TERISTIC 



TEST CONDITIONS 



VOLTAGE 






CURRENT 
A. 



LIMITS 



2N6671 



Min.j Max. 



2N6672 



Min. Max. 



2N6673 



Min.l Max. 



UNITS 



T C = 25°C 



T c = 125°C 



* In accordance with JEDEC registration data. 
a Pulsed: pulse duration = 300 us, duty factor ^2%. 
D CAUTION: The sustaining voltage Vq E q(sus) 
and Vq^ x MUST NOT be measured on a curve tracer. 



'CB 



value. 



= 125 V. t_ = 20 ms. 



'CEV 


450 
550 
650 


-1.5 
-1.5 
-1.5 






- 


0.1 


- 


0.1 


- 


Q,1 


mA 


'ebo 




-8 







- 


2 


- 


2 


- 


2 


V CE0 (sus)b 






0.2a 





300 




350 


- 


400 


- 


V 


hFE 


3 




5a 




10 


40 


10 


40 


10 


40 




V BE (sat) 






5a 


1 


- 


1.6 


- 


1.6 


- 


1.6 


V 


V CE (sat) 






53 
83 


1 
4 


— 


1 
2 


— 


1 
2 


— 


1 


V C EX b 
(Clamped Eg/^) 
L=170/iH, 
R BB =5J2 




-5 
-5 


5 
8 


ie 
3e 


350 
200 


- 


400 
250 


- 


450 
300 




's/b 


25 




6 




1 


- 


1 


- 


1 


- 


s 


|h fp | f=5MHz 


10 




0.2 




3 


12 


3 


12 


3 


12 




*T 


10 




0.2 




15 


60 


15 


60 


15 


60 


MHz 


C obo f=0.1 MHz 


10 c 








50 


300 


50 


300 


50 


•300 


pF 


td d 






5 


1 


- 


0.1 


- 


0.1 


- 


0.1 


MS 


tr d 






5 


1 


- 


0.5 


- 


0.5 


- 


0.5 


t s d 






5 


ie 


- 


2.5 


- 


2.5 


- 


2.5 


tfd 






5 


ie 


- 


0.4 


- 


0.4 


- 


0.4 


V cc =125 V, 
L=170/iH, 

r c =25 n 

Collector clamped 
to V CEX 






5 


ie 


- 


0.4 


- 


0.4 


" 


0.4 



'CEV 


450 
550 
650 


-1.5 
-1.5 
-1.5 






— 


1 


- 


1 


- 


1 


mA 


V CE (sat) 






53 


1 


- 


2 


- 


2 


- 


2 


V 


tr d 






5 


1 


- 


0.8 


- 


0.8 


- 


0.8 


Ms 


ts d 






5 


ie 


- 


4 


- 


4 


- 


4 


t f d 






5 


ie 


- 


0.8 


- 


0.8 


- 


0.8 


<c 
V cc =125 V, 

L=170pH, 
R c =25 n 
Collector clamped 
to V CEX 






5 


ie 


- 


0.8 


- 


0.8 


- 


0.8 



R 0JC 










- 


1.17 


- 


1.17 


- 


1.17 


°C/W 



1 

X 

o , 

< 

si 

§1- 

SSo.. 

O • 


Ib-Ic's| 






1 








1 

T C .-40'C 








T C -I«»«C 
T c • 2S'C 












Jg2-^ 


'dp* 






^^*&c$ 


&p 








-""d* 





















I 10 

COLLECTOR CURRENT <I C )-A 

»2CS-t»MMI 

Fig. 5 — Typical collector-to-emitter saturation voltage 
as a function of collector current for all types. 



o 

IT' 

" 5 
t$ 

u e 

1 ^ m 
° j 

I 


lB-Ic'5| 














-* * ™- 










~~^J22*- — ' 


^-"Z; 






— case 


S5^« El,cl 































COLLECTOR CURRENT (I c )-A 

*2C$-X9»M 

Fig. 6 — Typical base-to-emitter saturation voltage as 
a function of collector current for all types. 



4 

< t 

g 

*> 
™l 


COLLECTOR -TO-EMITTER 
VOLTAGE (V CE )> 3 V 






-— 


■-- 
















-«0< - 








u 




- 2« 


•C — 








S • 

m 


-SSTfS* 6 * 




















1 — ' 



COLLECTOR CURRENT lie* —A 

MCS-MMS 

Fjg. 7 — Typical base-to-emitter voltage as a function 
of collector current for all types. 



1 ■ 

I . 

u 4 

i 


CASE T 

mm 


EMM 


MAT 

if 


URE(T C ).2»»C^ 








tijM 






ft H IMP 














inn iiii!itt<HBfltt.i( 
1 iwttir 


Sol 
oo a 

MOl 














Hags 
















y" cul< " t ",'iiirimitirnTiiiiiiiiiiiiiiiiiittti 










C 


> 




4 


e a 


10 




2 



COLLECTOR-TO-EMITTER V0LTA8E (Vfcf)— V 

MCS- »*M 

Fig. 8 — Typical output characteristics for all types. 

__261 



POWER TRANSISTORS 



2N6671, 2N6672, 2N6673 




2 300)400 6 8 I 

350 I000 



COLLECTOR-TO-EMITTER VOLTAGE <V CE )-V 



92CM-29979RI 



Fig. 9 — Maximum operating areas for all types (Tq = 25 C). 




10 " " " "100 

COLLECTOR-TO-EMITTER VOLTAGE <V C r>- V 

*•*• 92CM-29M0RI 

Fig. 10 — Maximum operating areas for all types (T c = 100 C). 



262 



POWER TRANSISTORS 



2N6671, 2N6672, 2N6673 





CME TEMPERATURE (T C )*tS*C 






Xft.-X*, 






*f«» IHlllllllllllllllllll 






v* ** llllllllllllHBffiBl 




B I0OC 












o 




I I 


*« 




IHlllllllllllllllllll i 






HUHHHIIIMIBffl 4 ~* 


i~ 




IIIIHHIIIIIIIIIIIIH w 


&*« 


I In Iiiiilif nTirfTTJJ 'tJlllllllllllll 


llllllHllllllllllffl' p 


li 




Mlllllill t 


it™ 




|||| ! s 




l^lM^^ttP^^i^Ml^ tiiB 


mBlMHRSnmf (A 


> anr 


Will I ''IfttiDiiiiiinllliffl 


IrTrtrUftftfffiffffit ' 


d 


lllljll *y III lijmTntffnnfl 





IK 

« WOO 








CAW TEMPERATURE (T c ) 


ttS*CJg| 


3 

1 



Vtc-IZSV 












i 
jl 800 

S.0D 














H 












lL'! : l 
















z 

< 200 












1 1 & 












vl 







E 1000 

o 

5. 

I'-^soJ 
?I«oo 

o 

s 

< 200 


CASE TEMPERATURE (T C )>2S*C 
X Bl" A lllllllllllllllllllllttttt 
lBz-2* ffliPIJtf'ffiffiM 

vcc , '*»vffjt||||||lli||UH^ffi 

ip • 20 m« niiiiiiiiii) ii t 




5 

1 * 
?4 1 

M 


miimiittintt^iiiiiiiiiiiiiiis 










iTfmmt 

HI || | 'i 


1 H 

io 


^^''UtttftjtttttttttimiiiiTTi 



COLLECTOR CURRENT del— A 



COLLECTOR CURRENT (I c l — A 



COLLECTOR CURRENT (!<;) — A 



Fig. 11 — Typical saturated switching time 
characteristics for all types. 



Fig. 12 — Typical saturated switching time 
characteristics for all types. 



Fig. 13 — Typical saturated switching time 
characteristics for all types. 



| KXX, 

< I 800 
' 5600 
a 1 - «00 

0. 

X 

5 200 














uH 


5 

t 

1 
4 3" 

I 
3 P 

< 

1 




lB|"IA ^jh: 






H 










lB 2 --2A 
Vcc.l2iSV 








4Ki 












5?i 


ili 


::n 




'p" 


' 




j.-- 1 


ft" 


:= 


r.ii 
















.... 






tlr 


..' 


iitf 


7 






:t , 




li- 


If 


I!:: 


!> 








ili; 




P 






; : 




3E 


~ 






mC' 


trj 


-•• 


~:\ 




•i 




"| 




W. 




*T 


t*w 














"I" 






HH 


Hi: 






ii! 


■ ' 








_.... 


: ;~ 




•li 










•P 


;::: 


lij! 




•Ej 
















~i 




ijtj 


«S 








T 


Mii 


jjff 






























t^-T 





























COLLECTOR CURRENT del — A 



Fig. 14 — Typical saturated switching time 
characteristics for all types^ 





IfSA IIIIIIIIIIIIIHIH 








z»i— Xte-i* jumumuuui 








* c " t8V IIHIIIIIIIIIIIIII 






K 


t.»»M IIIIIIIIIIIIIHIH 






£ KXX 








s 


3 








& 


if- 








4 A 


ft- 






IMjH 


w 


ii 






llllll lIMffirw" 


J 


g "1 


juiM 




£ 










100 BO 
CASE TEMPERATURE <T C )— *C 



Fig. IS — Typical saturated switching time 
characteristics as a function of 
case temperature for all types. 





CASE TEMPERATURE (T c )> 


25 *C 










































KuSjko 
































II ; 








































»*; 






































88 n 














Coto 











































4 • "i 2 4 e Tb^ 

COLLECTOR-TO-BASE VOLTAOE (\fc B » — v O" 
EMITTER-TO-BASE V0LTA8E (V£B>— V 

•tCS-mtt 

F/ff. 7ff - Typical common-base input or output 
capacitance characteristics as a func- 
tion of collector-to-base voltage or 
emitter-to-base voltage for all types. 




W« t c (PEAK) 
I2CSM3M 



Fig. 17 — Oscilloscope display for measurement of 
clamped induction switching time (t c ). 



263 



POWER TRANSISTORS. 



2N6674, 2N6675 



10- A SwItehMaX Power Transistors 

High- Voltage N-P-N Types for Off- Line 
Power Supplies and Other High-Voltage 
Switching Applications 



The RCA-2N6674 and 2N6675* Switch Max 
series of silicon n-p-n power transistors fea- 
ture high-voltage capability, fast switching 
speeds, and low saturation voltages, together 
with high safe-operating-area (SOA) ratings. 
They are specially designed for off -.line power 
supplies, converter circuits and pulse-width- 
modulated regulators. These high-voltage, 
high-speed transistors are 1 00-per-cent tested 
for parameters that are essential to the design 
of high-power switching circuits. Switching 



times, including inductive turn-off time, and 
saturation voltages are tested at 100°C, as 
well as at 25°C, to provide information 
necessary for worst-case design. 

The 2N6674 and 2N6675 transistors are sup- 
plied in steel JEDEC TO-204MA hermetic 
packages. 



* Formerly RCA Dev. Type Nos. TA91 14D and 
TA91 14E, respectively. 



MAXIMUM RATINGS, Absolute-Maximum Values: 

* V CEV 

V BE --1.5V 

V CEX (Clamped) 

V BE --1.5V 

* V CEO 

* V EBO 

Ip(sat) 

* I 

„ 'cm 

: 'b 

T c up to 25°C 

Tq above 25°C, derate linearly 

: vj 

At distance ^1/16 in. (1 .58 mm) from 

seating plane for 10 s max 

* In accordance with JEDEC registration data. 



2N6674 



450 



350 
300 



2N6675 



450 
400 



m 


A 


is 


A 


20 


A 


R 
175 


A 
W 


1 


W/°P 


-fiR to 700 


Op 


335 


°r. 




* % ! 4 * •«> ' * • Vxx> 

COLLECTOft-TO -EMITTER VOLTAK (V^f) — V 

92CM-304R) 

Fig. 1 — Maximum operating areas for both types 
(T C = 2S°C). 



Features: 

■ 100% High-Temperature Tested for 

■ Fast Switching Speed 

■ High Voltage Ratings: 
V CEX * 350 V to 450 V 

■ Low V CE (sat) at l c = 10 A 

■ Steel Hermetic TO-204MA Package 
100°C Parameters 

Applications: 

■ Off- Line Power Supplies 

■ High-Voltage Inverters 

■ Switching Regulators 



TERMINAL DESIGNATIONS 

(FLANGE) 




JEDEC TO-204MA 




25 SO 75 I0O 125 ISO 175 200 225 250 
CASE TEMPERATURE (T C )-'C 



Fig. 2 — Dissipation and !§£ derating curves 
for both types. 



9 

S: a 

Z 

S ioo 

5 c 

g . 

z 
< 

* z 

10 
















































































^ 


















■5 

"1 






^ 












































r^s 


> 


t r 


























^v*o 


b 






It 


\ \ 















NUMBER OF THERMAL CYCLES 



Fig. 3 — Thermal-cycling chart for both types. 



264. 



. POWER TRANSISTORS 



ELECTRICAL CHARACTERISTICS 



CHARACTERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


2N6674 


2N6675 


v CE 


V BE 


>C 


'B 


Min. 


Max. 


Min. 


Max. 



T C = 25°C 



'CEV 


450 
650 


-1.5 
-1.5 






- 


0.1 


- 


0.1 


mA 


'EBO 




-7 







- 


2 


- 


2 


V CE0 (sus)b 






0.2 8 





300 


- 


400 


- 


V 


h F E 


2 




10 a 




8 


20 


8 


20 




V BE (sat) 






10 a 


2 


- 


1.5 


- 


1.5 


V 


V CE (sat) 






10 3 
15 a 


2 

5 


- 


1 
5 


- 


1 


V C EX b 
(Clamped Eg^) 

L=50MH.R B B =2n 




-4 


10 


2 


350 


- 


450 


- 


's/b 


30 
100 




5.9 
0.35 




1 
1 


— 


1 
1 


— 


s 


jh fe | f = 5MHz 


10 




1 




3 


10 


3 


10 




*T 


10 




1 




15 


50 


15 


50 


MHz 


C obo f = 0.1 MHz 


10 c 








150 


500 


150 


500 


pF 


td d 




-6 


10 


2 


- 


0.1 


- 


0.1 


MS 


tr d 




-6 


10 


2 


- 


0.6 


- 


0.6 


t s d 




-6 


10 


2** 


- 


2.5 


- 


2.5 


tf d 




-6 


10 


2** 


- 


0.5 


- 


0.5 


V CC =135V, 
L=50/iH,R c < 
13.5£2,Collector 
J clamped to Vqex 




-6 


10 


2e 




0.5 


- 


0.5 



R 0JC 



10 



1 



a PulMd: pulse duration - 300 n%, duty factor <2%. 

^CAUTION: The sustaining voltage Vq E0 («u«) and V CEX 
MUST NOT be measured on a curve tracer. 
*ln accordance with JEOEC registration data. 



T c =t00°C 




















'CEV 


450 
650 


-1.5 
-1.5 






— 


1 


~ 


1 


mA 


V CE (sat) 






10 3 


2 


- 


2 


- 


2 


V 


t r d 




-6 


10 


2 


- 


1 


- 


1 


MS 


ts d 




-6 


10 


2e 


- 


4 


- 


4 


tf d 




-6 


10 


2« 


- 


1 


- 


1 


*c 
V CC =135V, 
L=50aiH,Rc< 
13.5 J2, Collector 
clamped to Vq E x 




-6 


10 


2« 


- 


0.8 


- 


0.8 



°c/w \ 



°V CB value. 

d V cc -135V,t p = 20*is. 



'B1 ~'B2- 



2N6674, 2N6675 



'°8 

Z 
4 

W 2 
1 8 

i : 

i 

m Z 

A 

fo.i 

N 6 

3 « 

0.01 











































































































































































































































































































































































PULSE WIDTH (t.) — t 

MCS-MM7 

Fig. 4 — Typical thermal-response characteristic 
for both types. 



-BO - 

1 " 


COLLECTOR - TO - EMITTER VOLTAGE <Vc£> • 3 V 
























* 

1 2 
| 




V 




















" =::;; ^ 


^ 


^ 






















-«o»c 








c 






























£ « 
8 














































E 


I 




» 






1 


s 





COLLECTOR CURRENT del — A 



Fig. 5 — Typical dc beta characteristics 
for both types. 



16 

Z L4 
O 

h, 

P$o* 

I 8 - 

8 oj 


18 


lc/5 ill 11 II 11 1 1 1 1 1 1 [1 111 1 1 | llll II 1 ||f 


£fc 






Till M 






3ff^ 










s 


6 r a 4 10 II 12 o 


"a 


^m 



COLLECTOR CURRENT (15) — A 

MCS-30JM 

Fig. 6 - Typical collector-to-emitter saturation 
voltage characteristics for both types. 



4 
O 

< 1 

*- 

i 

6 

0.4 


I B 'I C 


9 


























r^ 








-4Q'C_ 








L\c 


v* 








25* C 


■^ 


&*■ 


AC 1 










O* 



















COLLECTOR CURRENTdc) — A 

92CS-303 

Fig. 7 — Typical base-to-emitter saturation 

voltage characteristics for both types. 



265 



POWER TRANSISTORS. 



2N6674, 2N6675 




COLLECTOR CURRENT (I c l— A 



92C3-30377 

Fig. 8 — Typical small-signal forward current 
transfer ratio characteristic for 
both types (f-5 MHz). 




COLLECTOR-TO-EMITTER VOLTAGE (V CE I — V 

»2CS- 30374 

Fig. 9 — Typical output characteristics for 
both types. 



JUNCTION TEMPERATU 
(Tj) • as«c 
isi-iaf" 

Vfc c -200V 
Ip • 19 fit 

' 90 (.H 




COLLECTOR CURRENT (I c )— A 

MCS- 30373 

Fig. 10 — Typical saturated-switching-time charac- 
teristics at Tj - 25° Cas a function of 
collector current for both types. 




COLLECTOR CURRENT (Ir) - A 

MCS-30379 

Fig. 11 — Typical saturated-switching-time charac- 
teristics at Tj' 100° Cas a function of 
collector current for both types. 



X 800 

a 700 

600 



JUNCTION 

TEMPERATURE (Tj) -IOO*C 
I B| .SA V 8E .-9V 
I B2 SSA MAXJ.-90 pH 
200 V 




COLLECTOR CURRENT (I c )— A 

MCS- 30310 

Fig. 12 — Typical saturated-switchlng-time charac- 
teristics at Tj - 100° Cas a function of 
collector current for both types. 




20 30409060708090 

JUNCTION TEMPERATURE (Tj) — »C » 2C S-303J 

Fig. 13 - Typical saturated-switching-time charac- 
teristics as a function of junction tem- 
perature for both types. 



I 

3! • 




==■'», 




CASE TEMPERATURE 


(T C )' 


ts*c 








■* 












































































































































-Sf 

































































































































10* _ I0» 

COLLCCTM-TO-MtC VOLTMC (Vca>— VOR 
EMITTER-T0-8A8E VOLTAM (Vf|)— V 

■tec- tow* 

Fig. 14 — Typical common-base input (C//^) 
or output (C obo ) capacitance 
characteristics for both types. 



1A0 cob 4oo 



Ttar 



580 480 

CLAMKO COLLECTOR -TO- EMITTER 
VOLTMC [v Cex (CLAMP ED j —V 

MC8- S0U4 



Fig. IS — Maximum operating conditions 
for switching between saturation 
and cutoff for both types. 




10% I C (PEAK) 
92CS-30313 



Fig. 16 - Oscilloscope display for normalized 
measurement of clamped inductive 
switching time (tj. 



266 



POWER TRANSISTORS. 



2N6676, 2N6677, 2N6678 



15-A SwItchMmC Power Transistors 

High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage 
Switching Applications 



The RCA-2N6676, 2N6677, and 2N6678* 
SwitchMax series of silicon n-p-n power 
transistors feature high-voltage capability, 
fast switching speeds, and low saturation 
voltages, together with high safe-operating- 
area (SOA) ratings. They are specially de- 
signed for off-line power supplies, converter 
circuits and pulse-width-modulated regulators. 
These high-voltage, high-speed transistors are 
100-per-cent tested for parameters that are 
essential to the design of high-power 



switching circuits. Switching time, including 
inductive turn-off time, and saturation volt- 
ages are tested at 100°C, as well as at 25°C, 
to provide information necessary for worst- 
case design. 

The 2N6676, 2N6677, and 2N6678 tran- 
sistors are supplied in steel JEDEC TO-204M A 
hermetic packages. 

* Formerly RCA Dev. Type Nos. TA91 1 4A, 
TA91 1 4B, and TA91 1 4C, respectively. 



Features: 

■ 100% High-Temperature Tested for 
100°C Parameters 

■ Fast Switching Speed 

■ High Voltage Ratings: 

V CEX = 350 v to 450 v 

■ Low V CE (sat) at l c - 15 A 

■ Steel Hermetic TO-204MA Package 

Applications: 

■ Off- Line Power Supplies 

■ High-Voltage Inverters 

■ Switching Regulators 



TERMINAL DESIGNATIONS 



MAXIMUM RATINGS, Absolute-Maximum Values: 

2N6676 

* V CEV 

V BE =-1.5V 450 

* V CEX Stamped) 

V BE = -1.5V 350 

* V CE0 300 

* v EBO 

l r (sat ) 

'c 

„ 'cm 

.„ 'b 

* P T 

T c up to 25°C 

Tq above 25°C, derate linearly 

:i** r * — 

T L ^ 

At distance ^1/16 in. (1 .58 mm) from 

seating plane for 10 s max 

* In accordance with JEDEC registration data. 



400 
350 

_ 8 . 

. 15 

-15 

. 20 

_ 5 



650 



450 
400 



.175 
. 1 



-65 to 200 



V 
V 
V 
A 
A 
A 
A 

W 
. W/°C 
. °C 



235 




6 8 2 4 8 8 2 « « >„ 

K> I00 » 

COLLECTOR -TO -eilHTT«:A VOLTAOE (VcE> — V 

92CMJ0390 

Fig. 1 — Maximum operating areas for all types 
(T C = 25°C). 




JEDEC TO-204MA 




"0 25 SO re 100 125 ISO ITS 200 22S ZS0 

CASE TEMPERATURE <T C >— *C 



Fig. 2 - Dissipation and l S /b derating curves for 
all types. 



* 
I 

z 
£ too 

3 8 

i ! 

z 
< 

HD 












































-fy 


■3i e 














V, 










Sr\. 




^ 










ii 






h^ 


*u 














s^-* 

^>£ 


f 






\\ 











NUMBED OF THERMAL CYCLES 



Fig. 3 — Thermal-cycling chart for all types. 



267 



POWER TRANSISTORS 



2N6676, 2N6677, 2N6678 

ELECTRICAL CHARACTERISTICS 



CHARAC- 
TERISTIC 



T C -25°C 



TEST CONDITIONS 



VOLTAGE 

Vdc 
V CEl Vbe 



CURRENT 
Adc 
'Cl 'B 



2N6676 



Min.| Max. 



LIMITS 



2N6677 



Min. Max. 



2N6678 



Min. Max. 



UNITS 



'CEV 


450 
550 
650 


-1.5 
-1.5 
-1.5 






- 


0.1 


- 


0.1 


- 


01 


mA 


'ebo 




-8 







- 


2 


- 


2 


_ 


2 


* V CE0 (sus)b 






0.2 3 





300 


- 


350 


- 


400 


_ 


V 


' h FE 


3 




15 a 




8 


- 


8 


- 


8 


- 




' V BE (sat) 






15 a 


3 


- 


1.5 


— 


1.5 


_ 


1.5 


V 


V CE (sat) 






15 a 
15 a 


3 
3 


- 


1 
1.5 


- 


1 

1 5 


- 


1 
1.5 


V C EX b 
(Clamped E s/b ) 
L=50/iH, 

Rbb =2 fi 




-6 


15 


3 


350 


- 


400 




450 




's/b 


30 
100 




5.9 
0.35 




1 
1 


- 


1 
1 


- 


1 
1 


- 


$ 


| h fe | f=5 MHz 


10 




1 




3 


10 


3 


10 


3 


10 




*T 


10 




1 




15 


50 


15 


50 


15 


50 


MHz 


c obo f=0 - 1 MHz 


10 c 








150 


500 


150 


500 


150 


500 


pF 


td d 




-6 


15 


3 


- 


0.1 


- 


0.1 


- 


0.1 


MS 


V d 




-6 


15 


3 


- 


0.6 


- 


0.6 


_ 


0.6 


t s d 




-6 


15 


3e 


- 


2.5 


- 


2.5 


_ 


2.5 


tf d 




-6 


15 


3P 


- 


0.5 


- 


0.5 


- 


0.5 


V 
V cc =200 V, 
L=50/iH, 
R c < 13.5 n 




-6 


15 


3 e 




0.5 




0.5 




0.5 


T C =100°C 










'CEV 


450 
550 
650 


-1.5 
-1.5 
-1.5 






- 


1 


- 


1 


- 


1 


mA 


V CE (sat) 






15 a 


3 


- 


2 


- 


2 


- 


2 


V 


tr d 




-6 


15 


3 


- 


1 


- 


1 


- 


1 


jus 


ts d 




-6 


15 


3e 


- 


4 


- 


4 


- 


4 


tf d 




-6 


15 


3e 


- 


1 


- 


1 


- 


1 


tc f 
V CC =200 V, 
L=50/iH, 
R c <13.5J2 




-6 


15 


& 




0.8 




0.8 




0.8 



n ejc 


10 




5 




- 


1 


- 


1 


- 


1 


°c/w 



"Pulsed: puis* duration - 300 n». duty factor <2%. 
^CAUTION: Tha sustaining voltage V CEO (»u») and V CEX 
MUST NOT be measured on a curve tracer. 
*ln accordance with JEDEC registration data. 



°V CB value. 



d V cc -200V,t p = 20MS. 



'B2- 



Collector clamped to Vgcv- 



I0 e 

i \ 

iu 2 

t . 

5> 2 

3 

foi 

o » 

N 6 

i: 

OCX 


— 


-- 




' 








— 


— 






















_ 


































































— 




_. 





































































































































































































PULSE WIDTH (tp) — • 

*2CS- 30347 

Fig. 4 — Typical thermal-response characteristic 
for all types. 



w 


COLLECTOR -TO -EMITTER VOLTAOE (V CE ) • SV 






J ' 




















a 




N 


















I 

z 
a 10 




















-40»C 








c 






























P r 






















4 


























4 


« » . 


n 






8 • « 



10 
COLLECTOR CURRENT del — A 

92CS- 30343 

Fig. S — Typical dc beta characteristics 
for all types. 



4 
S 


«B'ic 


a 


































-40»C 


■£*** 


& 


£> 


,\< 


I" 








a 


25' C" 










0.4 


j>* 




















i 




« 










« 





COLLECTOR CURRENT (I c ) —A 

42CS- 30374 

Fig. S — Typical base-to-emitter saturation 
voltage characteristics for all types. 







COLLECTOR CURRENT (I,.) — A 
»2C: 

»/ collector-to-emitter si 
voltage characteristics for all types. 



MC4-30344 

Fig. 7 — Typical collector-to-emitter saturation 



268 



POWER TRANSISTORS 



2N6676, 2N6677, 2N6678 




COLLECT** CURRENT (I c ) — » 92CS- 3037T 

Fig. 8 — Typical small-signal forward current 

transfer ratio characteristic for all types 
If' 5 MHz). 



24 

22 

4 

i ^ 
M* '• 

K * 
3B 
£ 14 

tE 

3 l2 
g » 

g a 

d « 

4 
2 


CASE 

B 


TEMPERATURE <T C )»25' 

HBIIII 


tooof 

fooo 

S500 
J2O0 










i BASE CURRENT- (Igl— wAJ 









Fig. 9 — Typical output characteristics for all 
types. 




COLLECTOR CURRENT (I c )— A 

KCS- 30JT3 

Fig. 10 — Typical saturated-switching-time 
characteristics at Tj m 2S°Cas • 
function of collector current for 
all types. 




COLLECTOR CURRENT (Ic) - A 

KC3-30379 

Fig. 11 — Typical saturated-switching-time 
characteristics at Tj~ 100°Cas 
a function of collector current 
for all types. 



1 000 

Jf 

J- 

„. 600 
* 

2 500 

fl400 
jjSOO 
^200 

d 

»■ 100 


JUNCTION || | || | 
TEMPERATURE (Tj) -100'C |||||| 

i b ,-»a vgj.-sv mm 

I B2 S 9 A MAXJ..JO /lH FH+£t 

VCC-200V Btttt 

lp'20jit llllll 


\<i 




6 

• i 

4 a 

3 
1 




& 






'•r 




M ■ H 1 1 1 1 ! 1 1 1 1 1 1 1 T 1 1 1 T 1 iff! 1 ! llllll 


riuinl 



COLLECTOR CURRENT (1(1— A 

WC<- 303*0 

F/jp. 12 — Typical saturated-switching-time 
characteristics at Tj » lOfPCas a 
function of collector current for 
all types. 



h 



IC'OA 

Vfcc'tOOV 
If -tO lit 
R L -I5.50 
L>90pM 



iSiisiiiii 
SsfSB 



1 



COLLECTOR CLAMPED TO Vm), POR t« ONLY 



HI I H I H I H II IH IIIIIIIIIIIHIII4+H 



m 



203040SO*OTOBOtOK>0 
JUNCTION TEMPERATURE (Tj)— *C 

*Wt- 80>T« 

Fig. 13— Typical saturated-switching-time 
characteristics as a function of 
junction temperature for ail types. 




V " io» 

COLLECTOR-TO-BASE VOLTABE (VcB>— V OR 
EMITTER-TO-BASE VOLTABE <V»»>— V 

MCS-303M 

Fig. 14 — Typical common-base input (C joo ) 
or output (Cg^gi capacitance 
characteristics for all types. 



I00 200 300 400 

390 490 

CLAMPED COLLECTOR -TO- EMITTER 
VOLTAGE [V CEX (CLAMPED)] —V 

•2CB-S03BS 



Fig. IS — Maximum operating conditions 
for switching between saturation 
and cutoff for all types. 




i&iiiiHii&fiiiiiiii 



::::::;Lfi::::::c: 




"0*V CEX 



K>% I C (PEAKI 
KCS-303M 



Fig. 16 — Oscilloscope display for normalized 
measurement of clamped inductive 
switching time ftg). 



269 



POWER TRANSISTORS 

40310-40314, 40316-40319, 40321-40325, 40327, 
40362, 40363, 40537-40539 
Silicon Transistors for Audio-Frequency 
Linear-Amplifier Applications 

These RCA transistors are diff used-junction nominal 12-volt vehicular type to 117-volt 

silicon n-p-n and p-n-p types intended for ac-dc type. 

specific applications in audio amplifiers. The use of a |,. silicon devices p,^, more 

They prov.de high-quality economical per- flexibility in the mechanical and electrical 

formance in applications from low- eve I input desj of a (jf jers since the out t heat 

£ 9 V° J'T ""f P°« e '- out P ut f ges ° f sinks can be held to a minimum. 

5 to 50 watts. Supply voltages range from the 

N-P-N TYPES IN TO-66 PACKAGE 

MAXIMUM RATINGS, Absolute-Maximum Values: 

40310 40312 40313 40316 40318 40322 40324 

V CE0 (sus) 35 60 - - - - 35 V 

V CER (sus) - - 300 40 300 300 - V 

At R BE - - 500 500 500 500 - Q. 

V EB0 2.5 2.5 2.5 5 6 6 2.5 V 

■ c 4 4 2 4 2 2 4 A 

l B 2 2 1 2 1 1 2 A 

p r 

T C <25°C 29 29 35 29 35 35 29 W 

T c > 25°C, derate linearly 0.17 0.17 0.2 0.17 0.2 0.2 0.17 W/°C 

T C = 175°C __5_ 55 _ w 

T stg- T J 65 to 200 °C 

T|_ (During soldering): 

At distances > 1/16 in. (1.58 mm) 

from case for 10 s max 235 °C 



Features: 

■ Hermetically-sealed packages 

■ Pellet bonded to header — 

for greater power-handling capability 
for greater shock resistance 

■ Freedom from second breakdown 

■ 40319 and 40538 are p-n-p complements 
of 40317 and 40539, respectively 



TERMINAL DESIGNATIONS 

c 

(FLANGE) 




N-P-N TYPES IN TO-39 PACKAGE 
MAXIMUM RATINGS, Absolute-Maximum Values: 



40311 40314 40317 40321 40323 40327 40539 



V CEO (sus) 

v CER (sus) 

At R BE 

v EBO 

■c 

■b 

p T : 

T c < 25°C 

T c > 25°C .derate linearly .... 
T A < 25°C 

T stg- T J 

T|_ (During soldering): 

At distances > 1/16 in. (1.58 mm) 

from case for 10 s max 300 



30 


40 


40 


- 


18 


- 


- 


V 


- 


- 


- 


300 


- 


300 


55 


V 


- 


- 


- 


500 


- 


1000 


500 


ft 


2.5 


2.5 


2.5 


5 


2.5 


5 


5 


V 


0.7 


0.7 


0.7 


1 


0.7 


1 


0.7 


A 


0.2 


0.2 


0.2 


0.5 


0.2 


0.5 


- 


A 


5 


5 


5 


5 
0.029 


5 


5 


5 


W 
W/°C 






1 


1 


1 


1 


1 


1 


1 


W 








-65 to 200 








°0 




92CS-275I2 

JEDEC TO-39 
n-p-n p-n-p 

40311 40319 

40314 40362 

40317 40537 

40321 40538 

40323 

40327 

40539 



300 255 300 255 



°C 



P-N-P TYPES IN TO-39 PACKAGE 

MAXIMUM RATINGS, Absolute-Maximum Values: 

40319 40362 40537 40538 

V CBO - 

V CEO (sus) -40 - - - 

V CER (sus) - -70 -55 -55 

At R BE - 200 500 500 

V CEV (sus) 

AtV BE = -1.5V - 

V EB0 -2.5 -4 -5 -5 

l c -0.7 -0.7 -0.7 -0.7 

l B -0.2 -0.2 -0.2 -0.2 

p r 

T c < 25°C 5 5 5 5 

T c > 25°C, derate linearly 0.029 0.029 0.029 0.029 

T A < 25°C 1 1 1 1 

T stg , Tj 65 to 200 

T"l (During soldering): 

At distances > 1/16 in. (1.58 mm) 

from case for 10 s max 230 



N-P-N 


TYPES 




IN TO-3 




PACKAGE 




40325 


40363 




35 


_ 


V 


35 


- 


V 


- 


70 


V 


- 


200 


n 


35 


_ 


V 


5 


4 


V 


15 


15 


A 


7 


7 


A 


117 


115 


W 


0.67 


0.66 


W/°C 


- 


- 


W 


-65 to 200 


°C 




JEDEC TO-66 
n-p-n 

40310 40316 

40312 40318 

40313 40322 
40324 



270 



POWER TRANSISTORS 



40310-40314, 40316-40319, 40321-40325, 40327, 

40362, 40363, 40537-40539 



Types: 40321, 40323, 40327, n-p-n 

Package: JEDEC TO-39 

ELECTRICAL CHARACTERISTICS, At Case Temperature (T C )=25°C Unless Otherwise 

Specified 



CHARAC- 
TERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


40321 


40323 


40327 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


'CBO 


V CB -15V,l E -0,Tc=25°C 


- 


- 


- 


0.25 


- 


- 


ma 


V CB -150 V.lg-O.T^IBO^ 


- 


0.1 


- 


1 


- 


0.1 


mA 


>CER 


V CE =150V,R BE =1000fi 


- 


5 


- 


- 


- 


5 


ma 


'ebo 


V BE =-2.5 V (40323) 
V BE =-5V (40321,40327) 


_ 


0.1 


_ 


1 


: 


0.1 


mA 


V CE0 (sus) 


IC«100mA* 


- 


- 


18 


- 


- 


- 


V 


V CER (sus) 


l c -50 mA*,R BE =1000 J2 


300 


- 


- 


- 


300 


- 


V 


V B E 


V CB »4 V,lc=50 mA*(40323) 
V CB -10 V,lc=50 mA* 
(40321,40327) 


- 


2 


- 


1 


- 


2 


V 


"FE 


V CE =4 V,l c =50 mA*(40323) 
V CE =10 V,l c =20 mA* 
(40321,40327) 


25 


200 


70 


350 


40 


250 




*T 


V CE =10 V.l c =50mA 


- 


- 


100 typ. 


- 


- 


MHz 


R 0JC 




- 


35 


- 


35 


- 


30 


°C/W 


R 0JA 




- 


- 


— 


17b 


— 


— 



Audio 

Type Prototype 

40321 2N3439 

40323 2N2102 

40327 2N3439 



* PulMd: Pull* duration - 300 /*, duty factor < 2%. 

For characteristics curves end test conditions, refer to published data for prototype. 



Types: 40311, 40314, 40317, n-p-n 40319, p-n-p 

Package: JEDEC TO-39 

ELECTRICAL CHARACTERISTICS, At Case Temperature {T C )=2SPC Unless Otherwise 

Specified 



CHARAC- 
TERISTIC 


TEST CONDITIONS* 


LIMITS 


UNITS 


40311 


40314 


40317 A 
40319* 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


'CBO 


V CB =15V,l E -0 

T r =25°C 




0.25 




0.25 


_ 


0.25 


fA 


T C =150*C 


- 


1 


- 


1 


- 


1 


mA 


'ebo 


V BE =-2.5 V 


- 


1 


- 


1 


- 


1 


mA 


V CE0 (sus) 


l c =100 mA* 


30 


- 


40 


- 


40 


- 


V 


Vbe 


V CE =4V 

l c -10 mA*(40317);lc=50 mA 

(40311,40314,40319) 


- 


1 


- 


1 


- 


1 


V 


V CE (sat) 


I^ISOmAM^ISmA 


- 


- 


- 


1.4 


- 


-1.4" 


V 


hFE 


V CE =4 V 

l c =10mA*(40317);l c = 

50 mA*(4031 1,40314,40319) 


70 


350 


70 


350 


40 
35* 


200 
200* 




*T 


V CE =10 V(4031 1 );V CE =4 V 
(40314,40319),l c =50mA 


100 typ. 


100 typ. 


100 typ* 


MHz 


R 0JC 




- 


35 


- 


35 


- 


35 


°C/W 


R 0JA 




- 


175 


- 


175 


- 


175 



For p-n-p devices, voltage end current are negative. 
* 40319 *Puised: Pulse duration - 300 /is, duty factor < 2%. 
For characteristics curves end test conditions, refer to published date for prototype. 



Audio 

Type Prototype 

40311 2N2102 

40314 2N2102 

40317 2N2102 

40319 2N4036 



271 



POWER TRANSISTORS 



40310-40314, 40316-40319, 40321-40325, 
40327, 40362, 40363, 40537-40539 



Types: 40362, 40537, 40538, p-n-p 40539, n-p-n 

Package: JEDECTO-39 

ELECTRICAL CHARACTERISTICS, At Case Temperature (T C )=2S°C Unless Otherwise 

Specified 



CHARAC- 
TERISTIC 


TEST CONDITIONS* 


LIMITS 


UNITS 


40362 


40537 


40538 
40539 # 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


'CER 


V CE =-45 V,R B E=500n, 

T C =25°C 
V CE =-65 V,R B e=1000 SI, 

T C =25°C 


- 


-1 


- 


-10 


- 


-10 


/iA 


V CE =-60 V,R B e=1000 SI, 
T C =150°C 


- 


-100 


- 


- 


- 


- 


'ebo 


V BE =4V 
V BE =5 V 




-1 




-1 




-1 


mA 


V CE r(sus) 


l c =— 100 mA*,R B E=500 SI 
l c =— 100 mA*,R BE =1000 SI 


-70 


- 


-55 


— 


-55 


— 


V 


Vbe 


V CE =-4V,l c =-50mA" 
V CE =-4 V,l c =-500 mA* 


- 


-1 


- 


-1.8 


- 


-2.7 


V 


V CE (sat) 


lc=— 50 mA*,lB=— 5 mA 
l c =— 150 mA*, l B =— 15 mA 
IC=(— 500 mA*,l B =-50 mA 


- 


-1.4 


- 


-1.1 


- 


-2 


V 


h FE 


V CE =-4V,l c =-50mA* 
V CE =-4 V,l c =-500 mA* 


35 


200 


50 


300 


15 


90 




*T 


V CE =-4 V,l c =-50 mA 


100 typ. 


100 typ. 


100 typ. 


MHz 


R 0jc 




- 


35 


- 


- 


- 


35 A 


°C/W 


R 0JA 




- 


175 


- 


175 


- 


175 



For n-p-n devices, voltage and current are positive. 
40539 *Pulsed: Pulse duration = 300 jus, duty factor < 2%. 
For characteristics curves and test conditions, refer to published data for prototype. 



Types: 40310, 40312, 40316, 40324, n-p-n 

Package: JEDEC TO-66 

ELECTRICAL CHARACTERISTICS, At Case Temperature (T C )=25°C On/ess Otherwise 

Specified 



CHARAC- 
TERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


40310 
40312 


40316 


40324 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


'CBO 


V CB =15 V,l E =0 

T C =25°C 
T C =150°C 


- 


10 
5 


- 


10 
5 


- 


10 
5 


mA 


'EBO 


V BE =-2.5 V 
V BE =-5 V 


: 


5 


— 


5 


- 


5 


mA 


V CE0 (sus) 


l c =100mA* 


35* 


- 


- 


- 


35 


_ 


V 


V CE r(sus) 


l c =100 mA*,R BE =500 SI 


60# 


- 


40 


- 


- 


- 


V 


v B e 


V CE =2 V,l c =1 A* 


- 


1.4 


- 


1.4 


- 


1.4 


V 


hFE 


V CE =2 V,l c =1 A* 


20 


120 


20 


120 


20 


120 




*T 


V CE =4 V,l c =500 mA 


750 typ. 


750 typ. 


750 typ. 


kHz 


R 0JC 




- 


6 


- 


6 


- 


6 


°C/W 



40310 



# 



40312 



*Pulsed : Pulse duration = 300 f£, duty factor < 2%. 



Audio 

Type Prototype 

40362 2N4036 

40531 2N4036 

40538 2N5322 

40539 2N5320 



Audio 

Type Prototype 

40310 2N3054 

40312 2N3054 

40316 2N3054 

40324 2N3054 



For characteristics curves and test conditions, refer to published data for prototype. 



272 



POWER TRANSISTORS 



40310-40314, 40316-40319, 40321-40325, 
40327, 40362, 40363, 40537-40539 



Types: 40313, 40318, 40322, n-p-n 

Package: JEDEC TO-66 

ELECTRICAL CHARACTERISTICS, At Case Temperature (T c ) = 25°C Unless Otherwise 



CHARAC- 
TERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


40313 


40318 


40322 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


'CEO 


V CE =150V,I B =0 


- 


5 


- 


5 


'- 


- 


mA 


'CEV 


V CE =150V(40318),V CE = 
300 V (40313), V B e= 
-1.5 V, T € =25°C 
T C =150°C 


- 


10 
10 


- 


5 
10 


- 


- 


mA 


'EBO 


V BE =-2.5 V 
V BE =-6 V 


— 


5 


_ 


5 


_ 


5 


mA 


V CE r(sus) 


l c =200mA*,R BE =2O0n, 
L=500 mH 


300 


— 


300 




300 


" 


V 


v B e 


V CE =10 V, l c =100 mA* 
lc=500 mA* 





1.5 


_ 


1.5 


— 


_ 


V 


*FE 


V CE =10 V, l c =500 mA* 
l c =100mA* 
l c =20 mA* 


40 
40 


250 


50 
40 


- 


75 
40 


- 




'sft 


V CE =150V 


150 


- 


100 


- 


100 


- 


mA 


E S/b 


V BE =-4 V 


- 


- 


50 


- 


50 


- 


JLtJ 


R 0JC 




- 


5 


- 


5 


- 


5 


°C/W 



* Pulsed: Pulse duration = 300 /LB, duty factor < 2%. 

For characteristics curves and test conditions, refer to published data for prototype. 



Audio 

Type Prototype 

40313 2N3585 

40318 2N3585 

40322 2N3585 



Types: 40325, 40363, n-p-n 

Package: JEDEC TO-3 

ELECTRICAL CHARACTERISTICS, At Case Temperature (T C )=25°C Unless Otherwise 

Specified 



CHARAC- 
TERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


40325 


40363 


Min. 


Max. 


Min. 


Max. 


'CBO 


V CB =30 V, T C =25°C 
T C =150°C 


_ 


5 
10 






mA 


'CER 


V CE =60 V,R B E=200n, 

T C =25°C 
T C =150°C 


- 


- 


- 


1 
10 


mA 


'EBO 


V BE =-5 V 
V BE =-4 V 




10 


_ 


5 


mA 


VcE0 (sus) 


l c =200 mA* 


35 


- 


- 


- 


V 


V CE r(sus) 


l c =200mA*,R B E=200J2 


- 


- 


70 


- 


V 


v CB0 


l c =100mA,l E =0 


35 


- 


- 


- 


V 


V B E 


V CE =4V, l c =8A* 
l c =4 A* 


— 


2 


- 


1.8 


V 


V CE (sat) 


l c =8 A*, l B =800 mA 
l c =4 A*,I B =400 mA 


_ 


1.5 


- 


1.1 


V 


*FE 


V CE =4V, l c =8A* 
I C =4 A* 


12 


60 


20 


70 




*T 


V CE =4 V,I C =3 A 


- 


- 


700 typ. 


kHz 


R 0JC 




- 


1.5 


" I 15 


°c/w | 



Audio 

Type Prototype 

40325 2N3055 

40363 2N3055 



*Pulsed: Pulse duration =» 300 /is, duty factor < 2%. 

For characteristics curves and test conditions, refer to published data for prototype. 



273 



POWER TRANSISTORS 



40406. 40408, 40410, 40407, 40409, 40411 
Silicon N-P-N and P-N-P Power Transistors 



For Audio-Amplifier Applications 

RCA-40406-40411, inclusive, are diffused- 
junction silicon n-p-n and p-n-p transistors 
intended for use in audio amplifiers. Giving 
high-quality performance economically, these 
six devices have power dissipation ratings 
of 1 to 150 W. Types 40406, 40407, and 



V CE0 (sus) . . . 
V CER (sus) 

R BE = 100 n 
v EB0 

•c 

'B 

T A <25°C . 

T A <, 50°C . 

T c < 25°C . 

T J 



40408 are supplied in JEDEC TO-39 her- 
metic packages; types 40409 and 40410 
are in TO-39 packages mounted on integral 
heat radiators. The 40411 unit, intended 
for use in audio output stages, is in a 
steel JEDEC TO-3 hermetic package. 



40406 


40407 


40408 


40409 


40410 


40411 




-50 


50 


90 


- 


- 


- 


V 


- 


- 


- 


90 


-90 


90 


V 


-4 


4 


4 


4 


-4 


4 


V 


-0.7 


0.7 


0.7 


0.7 


-0.7 


30 


A 


-0.2 


0.2 


0.2 


0.2 


-0.2 


15 


A 


1 


1 


1 


- 


_ 


_ 


W 


- 


- 


- 


3 


3 


- 


W 


- 


- 


- 


- 


- 


150 


W 






-BR tn +700 






°C 



Features: 

40406 & 40407 

■ V CE0 (sus) - -50 V max. (40406) 

■ V CE0 (sus) - 50 V max. (40407) 

■ 40406 is p-n-p complement of 40407 

■ 1 W dissipation rating 

40408 

■ Vceo( $us > = 90 V max. 

■ 1 W dissipation rating 

40409 & 40410 

■ V CER (sus) = 90 V max. (40409) 

■ V CER (sus) = -90 V max. (40410) 

■ 40410 is p-n-p complement of 40409 

■ 3 W free-air dissipation rating 

40411 

■ V(; E r(sus) = 90 max. 

■ Hometaxial-base construction 

■ 150 W dissipation rating 

TERMINAL DESIGNATIONS 




JEDEC TO-3 



O POO 

i eo 

3 40 

i » 

* 


CO 
AM 


LEC 
BIEN 


TOR 
T T 


TO-EM 
MPER 


ITTf 
ATU 


R VC 
RE ( 


LTACE 

r A >-2 




E>- 


•V 






- 






































































V 
























> 

\ 
























\ 



COLLECTOR CURRCNTIIcl-ni* 

92C5-22427RI 

Fig. 1 — Typical dc beta characteristic for 
40406 and 40410. 



COLLECTOR-TO-EMITTER VOLTAGE 


mc£i- 


10V 








■ 1 




■■■ 


- 200 

- ITS 

s 

§ ,» 

| 125 

" 100 

1 " 

¥ 
e so 

x a 

8 « 














| 


k c f J 














■ 


<$ 














d 


f\ 








-SS 






^ 










& 


<$ 


Y 














— 


rfl 


















- 


~ 




v\ 




















A 

























































































COLLECTOR CURRENT (I c ) — mA 

Fig. 2 — Typical dc beta characteristics 
40407. 40408, and 40409. 



(233IR2 

tor 




JEDEC 
TO-39 




Fig. 3 — Typical dc beta characteristics for 
40411. 



-lo 


COLLECTOR -TO-EMIT 


TER VOLTAGE (V CE J« -4V 


/ 




AMBIENT TEMRERAT 


RE IT A I--25'C 




/ 


-a 

< 














/ 














1 


M "• 












/ 














/ 




3 -4 












/ 














/ 
















/ 




2 












/ 




-j 
















I 






y 




i 



I2C3-2242IRI 



Fig. 4 — Typical input characteristic for 
40406 and 40410. 




Fig. S — Typical input characteristics for 
40407, 40408, and 40409. 



274 



POWER TRANSISTORS 



40406, 40408, 40410, 40407, 40409, 40411 



ELECTRICAL CHARACTERISTICS, Tq = 25° Unless Otherwise Specified 



CHARACTER- 
ISTIC 


TEST 
CONDITIONS 


LIMITS 


UNITS 


VOLT- 
AGE 
Vdc 


CUR- 
RENT 
Adc 


40406# 
40407 


40408 


40409 
40410* 


40411 


V C E 


■c 


>B 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


'CBO 
l E = 


10* 






- 


0.25* 


- 


- 


- 


- 


- 


- 


MA 


'ceo 


40 
80 






- 


1 


_ 


1 


_ 


_ 


_ 


_ 


HA 


T C =150°C 
40406 
40407 
40408 


40 
40 
80 






- 


0.01 
0.1 




0.25 










mA 


'CER 

Rbe = 100 n 


80 
















1 


- 


500 


MA 


T C =150°C 


80 
















0.1 


- 


2 


mA 


'ebo 

V BE = -4V 









- 


100 


- 


100 


- 


100 


- 


500 


MA 


V CE0 (sus) 




0.1 a 





50 b 


- 


90 b 












V 


V CER (sus) 
R BE = 100 ft 




0.1 
0.2 






- 


- 


- 




— 


90 


— 


V 


v B e 


10 
4 
4 
4 


0.001 a 

0.01 a 

0.1 5 a 

4 a 




- 


0.8 C 


- 


1 


- 


1 


- 


1.2 


V 


V CE (sat) 




0.1 5 a 
4 a 


0.015 
0.4 


- 


- 


- 


1.4 


- 


1.4 


_ 


0.8 


V 


40406 

40407 

h FE 40408 

40409-10 

40411 


10 

10 

4 

4 

4 


0.1 mA a 
0.00 1 a 
0.01 a 

0.1 5 a 
4 a 




30 
40 


200 
200 


40 


200 


50 


250 


35 


100 




h fe 

f = 20 MHz 


10 


0.05 




6» 


- 


- 


- 


- - 


- 


- 




*T 


4 


0.05 




100 (typ.) 


100 (typ.) 


100 (typ.) 


- 


- 


MHz 




4 


4 
















800 (typ.) 


kHz 


C obo 
l E = 
f = 1 MHz 


10" 






15* 
















pF 


's/b 

t = 1s nonrep 


40 






- 


- 


- 


- 


5* 


- 


- 


- 


A 


R 0JC 








- 


35 


- 


35 


- 


- 


- 


1.17 


°C/W 


R 0JA 








- 


175 


- 


175 


- 


50 


- 


- 



# For p-n-p devices, voltage and current values are 
negative 

* V CB * 40407 only * 40410 only 
a Pulsed; pulse duration = 300 us, duty factor ^2% 



b CAUTION: The sustaining voltage V CEO (sus) 
MUST NOT be measured on a curve tracer. 
V CEO (sus) should be measured by the pulse 
method (Note 'a'). 

c 40406 tested at l c = -0.1 mA 



COLLECTOR-TO-EMITTER VOLTAGE 


IV CE l-4 V 












* •:"■■ 






























i 


















































08 
07 

I 06 
S os 

S04 
3 05 
!/> ° 2 

™ 0.1 










































































































: 


Al 




















A-": 


//* 






















w 

$ 




~t 














:.:: 










'/ 








'.£ 
























L*: 


























a^ 










:.:, 












::': 


:::: 






I;;; 





















BASE-TO-EMITTER VOLTAGE (V BE ) — V 

Fig. 6 — Typical input characteristics for 
40411. 



-500 

-400 
-■300 
u -2O0 

o l0 ° 


AMBIEN 
IT A ). 


T TEMPERATURE 
25 " C 1 A ^" 


-a , 

-6 












- 




e 




. 


' : t 

ASE CURRENT U B >'-2 " 




r= j ' 

! ! 







COLLECTOR-TO-EMITTER VOLTAGE <V CE )-V 

Fig. 7 — Typical output characteristics for 
40406 and 40410. 




Fig. 8 — Typical output characteristics for 
40407, 40408, and 40409. 

















































ISO 




:lti 111 












iiis:; 


< '2 3 
I 

- I0.0 
u 2.5 




: # 
















FC+ 


























































tp 




























































EH 


+- lllilllll 


44 











Fig. 9 — Typical output characteristics for 
40411. 



275 



POWER TRANSISTORS 



40631, 41504 



Hometaxial-Base Silicon N-P-N VERSAWATT Transistors 



Designed for Medium-Power 
Linear and Switching Applications 



The RCA-40631 and 41504 are hometaxial- 
base silicon n-p-n transistors intended for a 
wide variety of medium-power applications. 
The hometaxial-base construction of these 
devices renders them highly resistant to 
second breakdown over a wide range of 
operating conditions. Type 40631 is intended 
especially for use in driver and output stages 
in high-fidelity audio-amplifier circuits; the 
41504 is a general-purpose device. 



Both of these transistor types are supplied in 
the VERSAWATT flame-retardant plastic 
package. The 40631 is supplied in the JEDEC 
TO-220AA formed-lead version of this pack- 
age for use with TO-66 sockets; the 41504 
is supplied in the JEDEC TO-220AB, 
straight-lead version. 



Features: 

■ Low saturation voltages 

■ High dissipation ratings 



Applications: 

■ Series and shunt regulators 

■ High-fidelity amplifiers 

■ Power-switching circuits 

■ Solenoid drivers 



MAXIMUM RATINGS, Absolute-Maximum Values: 

v CER (sus) 40631 

R BE = 100 n 45 

v EBO 5 

'C 4 

'B 2 

P T : 

At T c < 25°C 36 36 W 

At T c > 25°C Derate linearly 0.288 W/°C 

AtT A <25°C 13 W 

T J. T stg -65 to +150 °C 

T L 

At distances > 1/32 in. (0.8 mm) from seating plane 

for 10 s max 235 ____ °C 



41504 

35 
4 
4 
2 

36 



TERMINAL DESIGNATIONS 



(FLANGEK !l_Tl 



A 



O 






9ZCS-27320 

BOTTOM VIEW 
JEDEC TO-220AA 



ELECTRICAL CHARACTERISTICS, At Case Temperature (T C )=25°C 




CHARAC- 
TERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


40631 


41504 


V C E 


v B e 


'c 


•b 


Min. 


Max. 


Min. 


Max. 


'CER 
R BE = 100J2 


20 
40 








- 


0.5 


- 


5 


mA 


'ebo 




-4 
-5 








— 


1 


- 


1 


mA 


Vcer(sus) 
R B e = 10012 






0.1a 
0.2a 




45 


- 


35 





V 


hFE 


4 
4 




ia 
2a 




20 


70 


25 


— 




V CE (sat) 






1a 
2a 


0.05 
0.2 


— 


1 


— 


1 


V 


v B e 


4 
4 




1a 
2a 




- 


1.5 


- 


1.5 


V 


Ihfel 
f = 0.4 MHz 


4 




0.2 




2 


- 


2 


- 




R 0JC 










- 


3.5 


- 


3.5 


°C/W 


R 0JA 










- 


70 


- 


70 




9ZCS-275I9 

BOTTOM VIEW 
JEDEC TO-220AB 



no 

1 « 
I „ 

* ,0 

1 60 

5 so 

3 40 

£ 

I " 

»■ 20 
10 

g 










'"' 






I COLLECT0H T0-EIUTTO1 
_4. VOLTAGE (V«)- 4 V 






t 


/ 






> 
















4 / 
























' 


A 




















/ 


^ 


\j&/ 










'^ 










y\ 


*Y 














\, 




















\ 






















X 


























l ( 
























\ 
























V, 





a Pulsed: Pulse duration » 300 ti&, duty factor < 2%. 



COLLECTOR CURRENT llc> - A j^. 

Fig. 1 — Typical dc beta characteristics 
for 40631. 



276 



POWER TRANSISTORS 



40631, 41504 



COLLECTOR TOEWTTER VOLTAGE |VcE> ■ 4 1 






























•a 




























& 

9 
5 ao 

G 
1. 








*/ 






\ 
















J 


; 






■ -^ 


\ 














t 


^ 


^ 


















/ 




*Y 


















i 
I 


ao 


/ 
/ 


> 




































\ 
























v \ 




























\ 



























s 









001 






*0.01 


! 


' ' 


Vi 


! 


' 


'l.O 




* s 



COLLECTOR CURRENT (Id - A , 

Fig. 2 — Typical dc beta characteristics 
for 41 504. 



1.1 


COLLECTORTO-ERITTER YOLTACE (VcE) • 


4V 




































i 


















































| 

2 o.i 

i 

0.1 
0.4 




























































































































































































































































to 






6 








' 1. 



COLLECTOR CURRENT (10 - mA 

Fig. 3 — Typical gain-bandwidth product 
for 40631. 



COLLECTOR tO-E»lttlR VOLTACE (V CE ) . 4 V 










































i i4 

S 1.2 


















































































































































1 " 

a 

i I 



















































































































































COLLECTOR CURRB4T (Itf - "» Bn 

f/jr. 4 — Typical gain-bandwidth product 
for 4 1504. 




OS 1.0 

USE-TOCMTTER VOLTAGE (V M ) - ' 



























T?f 












4.0 








Is. 




















1 














H 




T=i 


V 3( 




fe 




ipj 






g- 125" C 








=5 




i 2s 

I: 


P 






Sj 
























































































CASi 


TEH 


»ERi 


TU« 


! (Tc) • 2 


■c; 

























^/ff. 5 — Typical transfer characteristics 
for 40631. 



O.J 1.0 IS 20 25 90 

•ASETOEMTTER VOLTAGE (V M ) - V x&m 

Fig. 6— Typical transfer characteristics 
for 41504. 




COLLECTOR TMMTTER VOLTACE (V«> - V 

Fig. 7 — Typical output characteristics 
for 40631. 



CASETEl 

< 40 

s " 

1 

8 2.0 

i M 


PER 


UVR 


E(T C 


■ 2 


*>c 








































i 


35 










P 


25 










-*3 




si 

5m 




W- 




f"; 


^_ 


-ii 












■ B 








Z* 
















&&=; 


*¥ 






k 


£.' 


1 








35 




SmTH 




jS 


2* 










ss 


;:if 


KB 






ffilASE CilRREMT ('l«l ■ 


10 mA J 








i-z- 


iS} 










53 



10 20 

COLLECTOR- TO-EWTTER VOLTACE <V CC ) - V viirJ 

Fig. 8 — Typical otu put characteristics 
for 41 504. 



277 



POWER TRANSISTORS 



40850, 40851, 40852, 40854 



450-V Silicon N-P-N Power Transistors 

For Off-Line Switching-Regulator Type Power-Supply Applications 



The RCA-40850, 40851, 40852, and 40854 
are n-p-n types selected from RCA's line 
of silicon power transistors for power-supply 
applications. Their high-voltage ratings per- 
mit operation directly off the power line 
thereby eliminating the heavy and bulky 
60-Hz power transformer; their fast switch- 
ing speeds permit operation above the audio- 
frequency range (20 to 30 KHz) for quiet 
performance and permit the use of small 
ferrite-core transformers for changing volt- 
age levels. 



MAXIMUM RATINGS, Absolute-Maximum Values: 



These devices have sufficient voltage capa- 
bility to be used as push-pull inverters or 
pulse-width-modulated inverters operating di- 
rectly off the 120-V power line; they can 
operate as switching regulators off a 240- V 
line; for 120-V lines, the prototypes can be 
used. 



Features: 

■ High-voltage ratings for operation from power 
lines without a step-down transformer 

■ Popular JEDEC TO-3 and TO-66 hermetic 
packages 



Applications: 

■ For use in switching-regulator supplies which 
feature: 

—A substantial reduction in size and weight 

due to elimination of the 60-Hz power 

transformer. 

—Operation with a substantial reduction of heat 

■ 5-V, off-line supplies with current ratings of 
25. 50. 100. or 200 A 

■ 30- V, off-line supplies with current ratings of 
5. 10. 20, or 40 A 



'CBO- 

'ceo 



(sus) 
' CER Uus) 

r be < 50 n 



CM 
(For 10 ms max.) 



T c < 25°C 

T C >25°C. 

T J. T stg 

1"l (During soldering): 

At distances ^ 1/32 in. (0.8 mm) 
from case for 1 s max. . . . 



450 


450 


450 


450 


V 


300 


350 


350 


300 


V 


400 


375 


375 


325 


V 


6 


9 


9 


6 


V 


2 


7 


7 


15 


A 


5 


10 


10 


30 


A 


1 


4 


4 


10 


A 


35 


45 
Derate linearly 


100 
to200°C 


175 


W 




-65 to +200 




°C 



°C 



* Safe-operating-area curves for prototype devices should be extended to the maximum values of collector 
current for these devices. 

Type 40850 (For 5-V, 25-A & 30-V, 5-A Power Supplies) 

Package: JEDEC TO-66 

ELECTRICAL CHARACTERISTICS, At Case Temperature <Tc) = 25°C, 

Unless Otherwise Specified 



SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


MIN. 


MAX. 


'CEV 


Vce=450V,V B E = -1-5V 


- 


0.2 


mA 


ICEV 


VcE = 450 V, VbE = -1-5 V, Tc = 125°C 


- 


2 


mA 


VcEO(sus)" 


IC = 0.2A, Ib = 


300 


- 


V 


VCER(sus)* 


IC = 0.2A, Rbe=50£2 


400 


- 


V 


vebo 


IE = 5mA, lc = 


6 


- 


V 


hFE 


IC = 0.75A, VcE = 10V 


25 


- 




VcE(sat) 


IC = 2A, Ib = 0.4A 


- 


2.0 


V 


V B E(sat) 


IC = 2A, Ib = 0.4A 


- 


2.0 


V 


'S/b a 


Vce = 100 V 


0.35 


- 


A 


ES/b a 


L = 100 /iH, lc(PEAK) = 2 A, Rbe = 20 £2 
V B E = 4 V 


0.2 


— 


mJ 



TERMINAL DESIGNATIONS 




JEDEC TO-3 

40852 
40853 




JEDEC TO-66 

40850 
40851 



* For characteristics curves and test conditions, refer to published data for prototype 2N3585 



278 



POWER TRANSISTORS 



40850, 40851, 40852, 40854 



Type 40851 (For 5-V, 50-A & 30-V, 10-A Power Supplies) 

Package: JEDEC TO-66 

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)°*25°C, 

Unless Otherwise Specified 



SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


MIN. 


MAX. 


ICEV 


VCE =450V, VbE = -1-5 V 


- 


0.5 


mA 


"CEV 


VCE = 450V, VbE = -1-5 V,Tc= 125°C 


- 


5 


mA 


VcE0(sus)a 


IC = 0.2A, l B = 


350 


- 


V 


VCER(sus)a 


IC = 0.2A, Rbe = 50J2 


375 


-- 


V 


VEBO 


IE = 1 mA, lc = 


9 


- 


V 


hFE 


IC= 1.2 A, VqE = 1.0 V 


12 


- 




VcE(sat) 


IC = 4A, l B = 0.8A 


- 


3 


V 


VBE(sat) 


IC = 4A, Ib = 0.8A 


- 


2 


V 


'S/b a 


VCE = 50 V 


0.9 


- 


A 


Es/b a 


L= 100/iH,lc(PEAK) = 3 A, RbE = 50J2 
V B E = -4 V 


0.45 


- 


mJ 



a For characteristics curves and test conditions, refer to published data for prototype 2N6079 



Type 40852 (For 5-V, 50-A & 30-V, 10-A Power Supplies 

Package: JEDEC TO-3 

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)=25°C, 

Unless Otherwise Specified 



SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


MIN. 


MAX. 


'CEV 


VcE = 450V, VbE = -1-5 V 


- 


0.5 


mA 


'CEV 


VcE = 450 V, VbE = -1 -5 V, Tc = 1 25°C 


- 


5 


mA 


VcEO(sus)" 


IC = 0.2A, l B = 


350 


- 


V 


VCER(sus)« 


IC = 0.2A, R B E = 50J2 


375 


- 


V 


vebo 


IE = 1 mA, lc = 


9 


- 


V 


hFE 


IC= 1.2 A, VcE = 1-0V 


12 


- 




VcE(sat) 


IC = 4A, Ib = 0.8A 


- 


3.0 


V 


VBE(sat) 


IC = 4A, Ib = 0.8A 


- 


2.0 


V 


"S/b a 


VqE = 40 V 


2.5 


- 


A 


Es/ba 


L = 100 juH, lc(PEAK) = 3 A, Rbe = 50J2 
V B E = -4 V 


0.45 


— 


mJ 



a For characteristics curves and test conditions, refer to published data for prototype 2N5240 



279 



POWER TRANSISTORS 



40850, 40851, 40852, 40854 



Type 40854 (For 5-V, 200-A & 30V, 40-A Power Supplies) 

Package: JEDEC TO-3 

ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 25°C, 

Unless Otherwise Specified 



SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


MIN. 


MAX. 


'CEV 


VcE = 450V, VbE = -1-5 V 


- 


1.0 


mA 


ICEV 


VcE = 450 V, VbE = -1-5 V, Tq = 125°C 


- 


10 


mA 


VcEO<sus)a 


IC = 02A, l B = 


300 


- 


V 


VcER(sus)a 


IC = 0.2A, Rbe=50S2 


325 


- 


V 


VEBO 


IE = 5 mA, Iq = 


6 


- 


V 


hFE 


IC= 10 A, VcE = 4 V 


8 


- 




VcE(sat) 


IC= 16 A, Ib = 3.2A 


- 


3 


V 


VBE(sat) 


IC = 16A, Ib = 3.2A 


- 


3 


V 


•S/b a 


VcE = 30 V 


5.8 


- 


A 


ES/b a 


L = 50juH,lc(PEAK) = 10 A, RbE = 50J2 
V B E = -4 V 


2.5 


~ 


mJ 



a For characteristics curves and test conditions, refer to published data for prototype 2N6251 



280 



POWER TRANSISTORS 



40871, 40872 



Epitaxial-Base, Silicon N-P-N and 
P-N-P VERSAWATT Transistors 

General-Purpose Types for Medium-Power Switching and Amplifier Service in 
Consumer, Automotive, and Industrial Applications 



Features: 

■ Low saturation voltage 

■ VERSAWATT package 

■ Maximum safe-operating-area curves 

■ Thermal-cycling ratings 

TERMINAL DESIGNATIONS 



RCA-40871 is an epitaxial-base silicon n-p-n 
transistor. RCA-40872 is an epitaxial-base 
p-n-p transistor. These devices are intended 
for a wide variety of medium-power switching 
and amplifier aoplications, such as switching 



MAXIMUM RATINGS. Absolute-Maximum Values: 



regulators and inverters and driver and out- 
put stages of high-fidelity amplifiers. These 
plastic power transistors are supplied in the 
JEDEC TO-220AB VERSAWATT package. 




BOTTOM VIEW 



N-P-N 



40871 



40872* 



P-N-P 
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: 

With external base-to-emitter resistance (Rbe) = 100 O Vcer(sus) 

With base open VcEO( sus > 

EMITTER-TO-BASE VOLTAGE VebO 

COLLECTOR CURRENT (Continuous) I c 

BASE CURRENT (Continuous) I B 

TRANSISTOR DISSIPATION: Pt 

At case temperatures up to 25°C 

At ambient temperatures up to 25°C 

At case temperatures above 25°C Derate linearly at 0.32W/°C 

At ambient temperatures above 25°C Derate linearly at 0.0144 W/°C 

TEMPERATURE RANGE: 

Storage & Operating (Junction^ -65 to 150 

LEAD TEMPERATURE (During Soldering): 

At distance^ 1/8 in. (3.17 mm) from case for 10 s max 235 



120 
100 



1.8 



For p-n-p device, voltage and current values are negative. 
ELECTRICAL CHARACTERISTICS, At Case Temperature (T c ) = 2S°C, Unless Otherwise Specified 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAOE 
V dc 


CURRENT 
A dc 


40871 
40872* 


VCE 


VEB 


ic 


>B 


MIN. 


MAX. 


Collector-Cutoff Current: 
With external base-to 
emitter resistance 
(R BE ) = 100 n 


'CER 


110 








- 


1 


mA 


Emitter-Cutoff Current 


>EBO 




5 







- 


1 


mA 


Collector-to-Emitter 
Sustaining Voltage : 
With base open 


VcEO'sus* 






0.1 





100 


- 


V 


With external base- 
to-emitter resistance 
. (RfjE> = 100n 


VcER<««> 






0.1 




120 


- 


V 


DC Forward-Current 
Transfer Ratio 


"FE 


4 

4 
4 




1» 




50 


250 




Base-to-Emitter Voltage 


V BE 


4 
4 
4 




1« 




- 


1.5 


V 


Col lector-to- Emi tter 
Saturation Voltage 


V CE (sat) 






1« 


0.1 


_ 


1.0 


V 


Gain-Bandwidth Product 


fT 


4 




o.s 




4 


- 


MHz 


Thermal Resistance : 
Junction-to-Case 
Junction-to-Ambient 


R 0JC 
R 0JA 










- 


3.125 
70 


°C/W 



* For p-n-p devices, voltage and current values are negative. 

* Pulsed: Pulse duration = 300 lis, duty factor = 0.018. 

CAUTION: The sustaining voltages VcEOlS"*' a" d VcER(sus) MUST NOT be measured on a curve tracer. 



JEDEC TO-220AB 



* 

1 




.I.40W 1 


V- 










4- — V-A- 


\\U\ 






tZl_!kss 


<* 




\\ 


-\\X 




Aa 


u 


w\\ 



NUMBER OF THERMAL CYCLES 

9ZCS-II 

Fig. 1 - Thermal-cycling ratings for 
both types. 



< 2 

| • 

i ! 




















1 IN 

I c MAX (CONTINUOI 




































N^j 


^ 
























1_ 


^ 


















































1 
















"- 









+- 






























































0.01 






























































































1 








"*- v CE 


MAX 


■ 1 


30 


V 










1 
i 



















I 10 35 SO 100 1000 

COLLECTOR-TO-EMITTER VOLTAGE (Vcej-V 

Fig. 2 • Maximum operating areas for 
40871. 



-10 • 

I * 
S -of 

3 ' 

-0.01 


— r - "pttt 


Mill ' ' 


• I C MAXKONTINUOOS)— 


CASE TEMPERATURE (T c 


>'25-C 










N>< 


f* - 






















i 


Nap 


[ *> 






















i 


' "^ - 


















i 






\ 


















i 


1 






vl 
















r 


--+- 
































































i 


i 






~2L 
















i 


i 






r 
















i 
1 


i 
































8 








6 8 



COLLECTOR -TO-EMITTER VOLTAGE (V CE )-V 

Fig. 3 - Maximum operating areas for 
40872. 

281 



POWER TRANSISTORS 



40871, 40872 




6 

X 4 
° 5 

u 2 










COU.ECTOR-T0-EMITTER VOLTAflEIVfcf)' 4V || | | | | [ | \f 






















:::Si 


























sza'k 






+ ifoff*'/ 1 1 1 1 1 1 1 n 1 1 1 1 1 1 1 1 
























\\\\\\\\\\\\m^ 





£ I00- 






























I 










































i^-^Tl 






25 -C ~~~"* 






























































































































l * 

8 













































































































































































BASE -TO -EMITTER VOLTAGE (V BE I — \ 



COLLECTOR CURRENT (I c l- 



Fig. 4 - Typical output characteristics 
for 40871. 



Fig. 5 - Typical transfer characteristics 
for 40871. 



Fig. 6 - Typical dc beta characteristics 
for 40871. 



SE TEMPERATE ,T C ,. 25'C ! ! I I ! ) | j ! ! |i j i] J [ I ! I 




-2 -4 -t -e -10 -12 

COLLECTOR-TO-EMITTER VOLTAGE (VCE>— V 



< 

1 

a--' 

g -' 

* 

-1 


COLLECTOR-TD-EMITTER VOLTAGE (V^l "-4 V | | | | | | | | f~- 


















" "Wf It- " 




M| 




TE 








| [ | | | | | | I 1 1 1 ft 


>7 








| | | | | 1 1 1 [ | 1 I/]' 


«E - 




ITr" 









1 ; 


COLLECTOR 


TO 


EMI 


TER VOLTAGE 


v rF l 


■4V- 








CASE TEMPE RAruRE 
















O,., 


























■^s" 












iT 


c 


w 


























i * 








































































































































| 4 

s i 
































































































































































« 


• 











COLLECTOR CURRENT (I c l — A 



Fig. 7 - Typical output characteristics 
for 40872. 



Fig. 8 - Typical transfer characteristics 
for 40872. 



Fig. 9 ■ Typical dc beta characteristics 
for 40872. 



282 



POWER TRANSISTORS 



BD142 



Hometaxial-Base, High-Power Silicon N-P-N Transistor 



Rugged General-Purpose Device For Commercial Use 

The RCA-BD142 is a hometaxial-base diffused-junction silicon 
n-p-n transistor intended for a wide variety of intermediate- 
power and high-power applications. It is especially suited for 
use in audio and inverter circuits at 12 volts. 

The BD142 is supplied in a JEDEC TO-3 hermetic steel 
package. 



Applications: 

■ Series and shunt regulators 

■ High-fidelity amplifiers 

■ Power-switching circuits 

■ Solenoid drivers 

■ 1 2- V audio and inverter circuits 



Features: 

• Maximum-safe-area-of-operation curves 

■ Low saturation voltage 

■ High dissipation rating 

■ Thermal-cycling rating curve 



TERMINAL DESIGNATIONS 



MAXIMUM RATINGS. Absolute-Maximum Values: 

COLLECTORTO-BASE VOLTAGE V CB0 

COLLECTORTO EMITTER SUSTAINING VOLTAGE: 

With base open Vqj:q(sus) 

With base reverse bias V BE = -1 .5 V V CEV (sus) 

EMITTER TO-BASE VOLTAGE V EB0 

CONTINUOUS COLLECTOR CURRENT I c 

CONTINUOUS BASE CURRENT Ig 

TRANSISTOR DISSIPATION: P T 

At case temperatures up to 25°C 

At case temperatures above 25°C 

TEMPERATURE RANGE: 

Storage and Operating (Junction) 

PIN TEMPERATURE (During Soldering): 

At distances S 1/32 in. (0.8 mm) from seating plane for 10 s max 



Derate linearly to 200 C 




ELECTRICAL CHARACTERISTICS, At Case Temperature (T c ) = 2S°C Unless Otherwise Specified. 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 






UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


LIMITS 


V CE 


V EB 


V BE 


'c 


'B 


MIN. 


MAX. 


Collector Cutoff Current: 
With base-emitter junction 
reverse -biased 


'CEV 


40 




-1.5 






" 


2 


mA 


Emitter Cutoff Current 


'ebo 




7 








- 


1 


mA 


Col lector -to-Emitter 
Sustaining Voltage: 
With base open 


V CE0 (susl 








02 





45 




V 


With base-emitter junction 
reverse -biased 


V CEV (sus) 






-1.5 


1 




50 


" 


DC Forward Current 
Transfer Ratio 


h FE 


4 






4 a 




12.5 


160 




Base-to-Emitter Voltage 


V BE 


4 






4 a 




- 


1.5 


V 


Collector-to-Emitter 
Saturation Voltage 


V CE lsa,l 








4 a 


0.4 


" 


1.1 


V 


Common-Emitter, Small- 
Signal. Short-Circuit, 
Forward Current Transfer 
Ratio 

If ■ 1 kHzl 


h te 


4 






1 




10 


- 




Magnitude of Common- 
Emitter. Small.Signal. 

Short-Circuit. Forward 

Current Transfer Ratio 

If -0A MHzl 


l h lel 


4 






1 




2 


- 




Gain-Bandwidth Product 


*T 








1 




800 


- 


kHz 


Forward-Bias Second-Breat: 
down Collector Current (t > 1 s) 


's/b 


39 










3 


- 


A 


Thermal Resistance 
(Junction to Case) 


R 9JC 












" 


1.5 


°C/W 



100 


III 




















-T. UWXJ>2O0 a C 
















J. 


























\5vl 
















8 * 

i 








N>« 
























v» 












5 
















N>. 
























>s' 


























s' J >. 
























































V* 


v& ^>. 
















10 


^L 


Vo V" 
















• 
















2 






• 





NUMBER OF THERMAL CYCLES 



92CS- 20«73 



Fig. 1 — Thermal-cycling rating chart. 



CCLLECTOR-TO-EWTTE* 


VOLT** (V eE )-4V 




















































! 


































































§ 


LO 
































i 






















































































































































. 

















































COLLECTOR CURRENT <X c >-« 



3 Pulsed: Pulse duration = 300 MS. duty factor - 2%. 



Fig. 2 — Typical gain-bandwidth product. 



283 



POWER TRANSISTORS 



BD142 





















IcikK temperature iTcl'iSHs^H^Hi 






c 
* 

| 100 

— • 

i 4 

o t 

o 10 






















































i Ic MM. 


.«""•" 










bnormalueo i 
§ rower 1 










































n^E?™ 








gHSI 








W* FOR $IN«LE H 




























SJJflJJiSfi? mminrm^fl^lll^fiBli 










COLLECTOR -TO -EMITTER VOLTACE IV CC I— V 



BASE-TO-EMITTER VOLTAOECV-r) — V 



Fig. 4 — Typical transfer characteristics. 



Fig. 3 — Maximum safe area of operation. 




■A3E-T0-EMITTER V0LT«SE(Vg^— V 



92CS-*2307fll 



CASE TEMPERATURE (T C )'2»'C I 



!:::::::::::::::::::::::::::: 
!::::!;m;;*^:::::::::::::::::::::::::::: 

* ••••■•••■■■•■•! 

i ■•■■•■•••■■•■■■■■'F^T. ••••••■■■■••■•••■■•■■■ 



«ec$-tZ906M 



Fig. 5 — Typical input characteristics. 



Fig. 6 — Typical output characteristics. 



COLLECTOR-TO-EMITTER VOLTAGE (Vce>-4V 










9 «o 

B 

I 

i 

8 o 






1> ' 


















rf 


t>- 




















4— J-^ 












s 




$2* 
















.«•- 
















s 


J&> 




















<tf\ 














^ 






-<& 




































s: 






















3J 












































\ \. 






















v s 






















\ 






























r-^ 








"1 









COLLECTOR CURRENT (I c l-A 

MCSHZSOMI 

Fig. 7 — Typical dc beta characteristics. 



284 



POWER TRANSISTORS 



BD181, BD182, BD183 



Hometaxial-Base, High Power Silicon 
N-P-N Transistors 



Rugged, Broadly Applicable Devices For Commercial Use 

RCA-BD181, BD182 and BD183 are silicon n-p-n transistors 
intended for a wide variety of high-power applications. The 
hometaxial-base construction of these devices renders them 
highly resistant to second breakdown over a wide range of 
operating conditions. 

These transistors are supplied in a JEOEC TO-3 hermetic 
steel package. 



Applications: 

• Series and shunt regulators 

■ High-fidelity amplifiers 

■ Power-switching circuits 

■ Solenoid drivers 



MAXIMUM RATINGS. Absolute-Maximum Values: 

COLLECTOR-TO-BASE VOLTAGE V CB0 

COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: 

With external base-to-emitter resistance (Rgg) » 100 fi V CER (sus| 

With base open V CE0 |sus) 

EMITTER-TO-BASE VOLTAGE V EB0 

CONTINUOUS COLLECTOR CURRENT I c 

CONTINUOUS BASE CURRENT I fl 

TRANSISTOR DISSIPATION: P T 

At case temperatures up to 25° C 

At case temperatures above 25 C 

TEMPERATURE RANGE: 

Storage and Operating (Junction) 

PIN TEMPERATURE (During Soldering): 

At distances > 1/32 in. (0.8 mm) from seating plane for 10 s max 



BD181 BD182 BD183 



55 


70 




85 


V 


45 


60 




80 


V 


7 


7 




7 


V 


15 


15 




15 


A 


7 


7 




7 


A 


117 


117 




117 


W 




- See Fig. 


2 


•» 




*•— - 


-65 to +200 
— 235 


g^ 


°C 
o 



Features: 

■ Maximum safe-area-of-operation curvet 

■ Low saturation voltages 

■ High dissipation ratings 

■ Thermal-cyding rating curves 



TERMINAL DESIGNATIONS 




ELECTRICAL CHARACTERISTICS, At Case Temperatu 


re(T c 


i = 25 C Unless Otherwise Specified 














CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CUR- 
RENT 
Adc 


BD181 


BD182 


BD183 


V CB 


V C E 


V EB 


VflE 


'c 


<B 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


Collector-Cutoff Current: 
With emitter open and 
T c = 200°C 


'CBO 


45 
60 
80 















- 


2 


- 


5 


- 


5 


mA 


With base-emitter junction 
reverse-biased 


'CEX 




45 
60 
80 




-1.5 
-1.5 
-1.5 






- 


1 


- 


1 


~ 


1 


Emitter-Cutoff Current 


'ebo 






7 








- 


5 


- 


5 


- 


5 


mA 


Collector-to-Emitter Sustaining Voltage: 
With base open 


V CEO (sus) 










0.2 3 





45 


_ 


60 


_ 


80 


_ 


V 


With external base-to-emitter resistance 
(R BE )=100« 


V CER (sus) 










0.2 3 




55 


- 


70 


- 


85 


- 


DC Forward Current Transfer Ratio 


h FE 




4 
4 






4 a 
3" 




20 


70 


20 


70 


20 


70 




Base-to-Emitter Voltage 


V BE 




4 
4 






3" 

4 a 




- 


1.5 


- 


1.5 


- 


1.5 


V 


Collector-to-Emitter Saturation 
Voltage 


V CE (sat) 










4 a 
3" 


0.4 a 
0.3" 


- 


1 


- 


1 


- 


1 


V 


Magnitude of Common-Emitter, Small- 
Signal, Short-Circuit, Forward Current 
Transfer Ratio (f = 0.4 MHz) 


M 




4 






1 




2 


- 


2 


- 


2 


- 




Gain-Bandwidth Product 


f T 










1 




800 


- 


800 


- 


800 


- 


kHz 


Common-Emitter, Short-Circuit, Small- 
Signal, Forward Current Transfer 
Ratio Cutoff Frequency 


f hfe 




4 






0.3 




15 


- 


15 


- 


15 


- 


kHz 


Forward-Bias Second Breakdown Collector 
Current (t > 1 s) 


's/b 




30 










3.95 


- 


3.95 


- 


3.95 


- 


A 


Thermal Resistance (Junction-to-Case) 


R 0JC 














- 


1.5 


- 


1.5 


- 


1.5 


°C/W 



a Pulsed: Pulse duration = 300 us, duty factor = 1 .8%. 



285 



POWER TRANSISTORS 



BD181, BD182, BD183 




100 



COU.ECTOR-TO- EMITTER V0LTA6E «Vcp» — V 

Fig. 1 — Maximum operating areas for all types. 



M«»- 





BASE-TO-EMITTER VOLTAGE (Vg^—V 



Fig. 4 — Typical input characteristics 
forBD182. 



Fig. 5 — Typical output characteristics 
for BD182. 



COLLECTOR-TO-EMITTER 


V0LTA8E (VCEl ,4 vBIIIIIIIIIIIIIII^M 


""""'HI 




MllttttF'^lllllllllllllllllllllllllllllllUj 






iHHiiHu^/niu^JiiinmiiniHii'iiiiiii 


« O.BffiTrff 

i mft 




^P^i'Effll ffl 






ililiU / II 1 1 LiTi I 111 ill III IIH I ; 


— 0.6HBfFf 






















lililillilllil'lhillilili 1 


i o.«[tffm 




" 0.2H 





CASE TEMPERATURE (T C )-2»«C ||||||||||||| 








4 1 

- S E 

S sf 

oc E 

i l 

o 2[ 








iiimiiiiiiiTooimmmiiiHiiiiiiiii 

UUUUUlmoo HnTm rtt 
li 1 1 1 1 1 1 1 1 1 1 1 1 soo 44-H44-U4-1 1 1 1 1 1 1 1 1 1 1 1 1 

IUMMU340o| 






:BASE CURRENT (Igl ■ 100 nA^M 









10 20 JO 40 


90 


SO 



BASE-TO-EMITTER VOLTAGE (Vbe) — V 

92CS- 19440 

Fig. 7 — Typical input characteristics for 
BD181 and BD 183. 



Fig. 8 — Typical output characteristics for 
BD181 and BD183. 



loo . 

» 

J. •■ 


C>sC Tj 


MAX • 


OO-C 








_ 






— 


i _s 


sv I ' 










1 


















i 


1 \ 


J&. 


X 














r^ 




^ 








,f 













NUMBER OF THERMAL CYCLES 



Fig. 2 — Thermal cycling rating chart for 
all types. 




Fig. 3 — Typical transfer characteristics 
for all types. 



COLLECTOR-TO-EMITTER VOLTAGE {V CE ]-4V 










- SO 

g 

<z 60 

I 

t 40 

| 








I i 


















4V> 
























UN 














/ 




















, 




^ 
















/ 


aS& 




















<& 














vs 






& 






































s\ 






















X s 












































s. ^ 


* 

8 o 






















N \ 






















\ 






















i 








- 








_ 









COLLECTOR CURRENT (I c )-A 

Fig. 6 — Typical dc-beta characteristics 
forBD182. 



COLLECTOR- TOtEMITTER VOLTAGE <VC£> '4 V 










s 

" 40 

OC 

o 20 

K 

8 
































































































































*f 


T""™ 


-»^ 


















--• 






















S 






















7 






\& 


k'-" 








- ^ 








' 


*&»* 


















& 


£j»** 


























































































\ 


































8 








B 








• 



COLLECTOR CURRENT <!<;>— A 



Fig. 9 — Typical dc-beta characteristics for 
BD181 and BD183. 



286 



POWER TRANSISTORS 



BD181, BD182, BD183 




COLLECTOR CURRENT (!<;>-* 



CASE TEMPERATURE (Tc)-2S»C 


















IOO 

> 

JUL 90 

i • 

f -80 
?I 

§§60 
»?50 

iS«° 

30 
































































VCER 












BO 


I83 
































VCEO 




































VCER 










































80/8^ 




































VCEO 






VCER 












80 






























'8/ 




































VCEO 




































































| 






































6 






e 






6 






6« 



I 10 IOO IK IOK I00K 

EXTERNAL BASE-TO-EMITTER RESISTANCE (Rbe> O 

»2CS-2ZTM 




-5 -4 -3 -2 

BASE-TO-EMITTER VOLTAGE (V B E> 



Fig. 10 — Typical gain-bandwidth product 
for all types. 



Fig. 11 — Sustaining voltage vs. base-to-emitter Fig. 12 — Minimum reverse-bias second-breakdown 
resistance for all types. characteristics for all types. 



287 



POWER TRANSISTORS 



BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C 

Epitaxial-Base Silicon N-P-N and P-N-P 
VERSAWATT Transistors 

For Power-Amplifier and High-Speed-Switching Applications 



These RCA devices are epitaxial-base silicon n-p-n and 
p-n-p transistors; they differ only in their voltage ratings. 
These transistors are intended for a wide variety of switching 
and amplifier applications such as series and shunt regulators, 
and driver and output stages of high-fidelity amplifiers. The 
BD240-series p-n-p power transistors are complements of 
the n-p-n devices in the BD239 series. 



MAXIMUM RATINGS. Absolute-Maximum Values: 

COLLECTOR-TO-EMITTER VOLTAGE: 

With external base-to-emitter 

resistance (RgE' = 10 ° s! V CER 

With base open ^CEO 

EMITTER-TO-BASE VOLTAGE V EB0 

CONTINUOUS COLLECTOR CURRENT l c 

CONTINUOUS BASE CURRENT I B 

TRANSISTOR DISSIPATION: P T 

At case temperatures up to 25°C .... 

At ambient temperatures up to 25°C . 

At case temperatures above 25°C .... 
TEMPERATURE RANGE: 

Storage & Operating (Junction) 

LEAD TEMPERATURE (During Soldering): 

At distance 1/8 in. (3.17 mm) from 

case for 10 s max 

♦ For p-n-p devices, vottage and current values are negative. 



All these transistors are supplied in the JEDEC TO-220AB 
straight-lead version of the VERSAWATT package. Optional 
lead configurations are available upon request. For infor- 
mation, contact your nearest RCA International Sales 
Office. 



B0239A 
BD240A* 



BD239B 
BD240B' 



BD239C 
BD240C* 



115 
100 



30 


30 


30 


30 


2 


2 


2 


2 




Dera 


e linearly to 150°C 













Features: 

■ 30 W at 25°C case temperature 

■ 4-A rated collector current 

■ Min. f T of 3 MHz at 10 V, 200 mA 



TERMINAL DESIGNATIONS 




»2CS-27SI9 

BOTTOM VIEW 
JEDEC TO-220 AB 



* 

1 

5 io 


_,,.«! 


.)= SOW 




1 


\ ^ 


1 








1 
\ 




/ 
















^1 




* / 




V 








\ 


|\Y§k 




l\° 


r 


V 


'mv 



ELECTRICAL CHARACTERISTICS at Case Temperature (T c ) = 2S°C 



THERMAL CYCLES 



Fig. 1 — Thermal-cycling ratings for all types. 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS ♦ 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


BD239 
BD240* 


BD239A 
BD240A* 


BD239B 
BD240B* 


BD239C 
BD240C* 


V CE 


V BE 


'c 


l B 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


Collector Cutoff Current: 
With base open 


'ceo 


-30 
-60 










- 


-0.3 


- 


-0.3 


" 


-0.3 


- 


- 0.3 


mA 


With base-to-emitter 
junction short-circuited 


'CES 


-45 
- 60 
-80 
-100 












: 


-0.2 


" 


- 0.2 


" 


-0.2 


- 




Emitter Cutoff Current 


'ebo 




s 









-1 




-1 




-1 




-1 


mA 


Collector-to-Emitter 
Breakdown Voltage: 
With base open 


V BR(CEOI 






0.03 3 





-45 


" 


-60 


" 


-80 


- 


-100 


- 


V 


DC Forward-Current 
Transfer Ratio 


h FE 


-4 
-4 




-0.2 a 

~1 a 




40 
15 


" 


40 

15 


" 


40 

15 


- 


40 
15 


- 




Base-to-Emitter Voltage 


V BE 


-4 




-l a 




- 


-1.3 


- 


-1.3 ' 


- 


-1.3 


- 


-1.3 


V 


Collector-to-Emitter 
Saturation Voitage 


v CE (»tl 






-1 a 


-0.2 


- 


-0.7 


- 


-0.7 


- 


-0.7 


- 


-0.7 


V 


Common-Emitter 

Small-Signal Short- 
Circuit Forward- 
Current Transfer Ratio 
(f = 1 kHz) 


h fe 


- 10 




0.2 




20 


" 


20 


- 


20 


" 


20 


" 




Magnitude of Common 
Emitter Small-Signal 
Short-Circuit Forward- 
Current Transfer Ratio 
(f = 1 MHz) 


M 


-10 




0.2 




3 


- 


3 


" 


3 


- 


3 


" 




Thermal Resistance: 
Junction-to-Case 


R 0JC 










_ 


4.17 


_ 


4.17 


_ 


4.17 


_ 


4.17 


°C/W 


Junction-to-Ambient 


R 0JA 










- 


62 5 


- 


62.5 


" 


62.6 


- 


62.5 



"Pulsed: Pulse du 



= 300 ms, duty factor » 2%. 



£400 

S 200 

& 

S 100 

« eo 
S «° 

i 40 

| 20 

S l0 . 
f 


COLLECTOR-TO-EMITTER VOLTAGE IVCEl' «V 








CASE TEMPERATURE (Tr)'IZ5*C 




























,25JC 


































































-40*C 





























































































































































COLLECTOR CURRENT U c >— A »2CS-»»? 

Fig. 2 — Typical dc beta characteristics for 
BD239-series types. 



jfUoo 

S 200 

| 100 
«• »0 
t- 60 
1 « 

| 20 

u '0 

o e 

6 


COLLECTOR-TO-EMITTER VOLTAGE IVCE' 1 " 4V 








CASE TEMPERATURE n>>.l2S-C 




























25 'C 




























































-40"C 





























































































































































COLLECTOR CURRENT (I c l— A Mcs-i 



Fig. 3 — Typical dc beta characteristics for 
BD240-series types. 



288 



POWER TRANSISTORS 



BD239, BD239A, BD239B, BD239C, BD240, BD240A, BD240B, BD240C 




t 

T ', 

S , 

i 

8 

h\ 

-0-OI 








y'i^f* i ff t Ttir'lllt l HHIIIIIIIIIIIIl'IIIIIW 










fp 










[CASC TCMKMTIMC IT 


C 1-2S"I 




tIq imuc. icomMuwsP 






K&h 








H:: 


: " = Htm 


















»3 




MMV 














w* 3 


§811 














■ 






II 


US 












































*«H 






















































» 


p« 




































":; 




























- h. 


' 


TjH: 










i 






-': : 




St 


































j 














































































|5jy 
























































»C£o"* ,< - 45V 1»2«>I 1 






































_ Vet,, HUt— «OV (80J4OAI 3 


































































~ "CEO MA1U-IOOV IB0240I 






f 






in; 


^i!T 




Us 
















| ! im; ; 


ii== 




1 ;i E 
























































'■'[ 


... 
































:ii 


1 S: 




V 


;:;: 






h!-1 


M, 




fi.i 






g 








Trff 


~ 


Z 


-P 




:Ji 


P 








* 
* 






























mi : 




























• 




00 










* *K 


XX 



Fig. 4 — Maximum safe operating areas for 
BD239*eries types. 



COLLCCTOR-TO-EMITTER VOLTAGE (Vfegl— V M CS-M4* 

Fig. 5 — Maximum safe operating areas for 
BD240-series types. 



289 



POWER TRANSISTORS 



BD241, BD241A, BD241B, BD241C, BD242, BD242A, BD242B, BD242C 

Epitaxial-Base Silicon N-P-N and P-N-P 
VERSAWATT Transistors 



For Power-Amplifier and High-Speed-Switching Applications 

These RCA devices are epitaxial-base silicon n-p-n and 
p-n-p transistors; they differ only in their voltage ratings. 
These transistors are intended for a wide variety of switching 
and amplifier applications such as series and shunt regulators, 
and driver and output stages of high-fidelity amplifiers. The 
BD242 -series p-n-p power transistors are complements of 
the n-p-n devices in the BD241 series. 



MAXIMUM RATINGS, Absolute-Maximum Values: 

COLLECTOR-TO-EMITTER VOLTAGE: 

With external base-to-emitter 

resistance (Rgf:) » 100 fi V CER 

With base open v CEO 

EMITTER-TO-BASE VOLTAGE. . V EB0 

CONTINUOUS COLLECTOR CURRENT l c 

CONTINUOUS BASE CURRENT Ig 

TRANSISTOR DISSIPATION: P T 

At case temperatures up to 25°C .... 

At ambient temperatures up to 25°C . 

At case temperatures above 25°C .... 
TEMPERATURE RANGE: 

Storage & Operating (Junction) 

LEAD TEMPERATURE (During Soldering): 

At distance 1/8 in. (3.17 mm) from 

case for 10 s max 

♦ For pnp devices, voltage and currant valuaa ara negative. 



ELECTRICAL CHARACTERISTICS at Case Temperature (T c ) • 25°C 



All these transistors are supplied in the JEDEC TO-220AB 
straight-lead version of the VERSAWATT package. Optional 
lead configurations are available upon request. For infor- 
mation, contact your nearest RCA International Sales 
Office. 



B0241 


BD241A 




BD241B 


BD241C 




B0242* 


BD242A* 




B0242B* 


BD242C* 




55 


70 




90 


115 


V 


45 


60 




80 


100 


V 


5 


5 




5 


5 


V 


5 

1 


5 

1 




5 

1 


5 
1 


A 
A 


40 


40 




40 


40 


W 


2 


2 




2 


2 


W 




Derate li 


nearly t 


150°C 






« 





55 to 150 


•»■ 


°C 


< 




235- 




a* 


°C 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS * 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


BD241 
BD242* 


BD241A 
BD242A* 


BD241B 
BD242B* 


BD241C 
BD242C* 


V CE 


V BE 


'c 


<B 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


Collector Cutoff Current: 
Wtth base open 


'CEO 


30 
60 










_ 


0.3 


- 


0.3 


- 


0.3 


- 


0.3 


mA 


With base-to-emitter 
junction short-circuited 


'CES 


45 
60 
80 

too 












- 


0.2 


- 


0.2 


- 


0.2 


- 


0.2 


Emitter Cutoff Current 


'ebo 




-5 







- 


1 


- 


1 


- 


1 


- 


1 


mA 


Collector-to-Emitter 
Breakdown Voltage: 
With base open 


V BRICEOI 






0.03" 





45 


- 


60 


" 


80 


- 


100 


" 


V 


DC Forward-Current 
Transfer Ratio 


h FE 


4 
4 




1» 
3» 




26 

10 


" 


25 
10 


- 


25 

10 


- 


25 
10 


- 




Base-to-Emitter Voltage 


V BE 


4 




3" 




- 


1.8 


- 


1.8 


- 


1.8 


- 


1.8 


V 


Collector-to-Emitter 
Saturation Voltage 


v ce i«i 






3" 


0.6 


- 


1.2 


- 


1.2 


- 


1.2 


- 


1.2 


V 


Common-Emitter 
Small-Signal Short- 
Circuit Forward- 
Current Transfer Ratio 
(f - 1 kHz) 


"fe 


10 




0.5 




20 


- 


20 


- 


20 


" 


20 


" 




Magnitude of Common 
Emitter Small-Signal 
Short-Circuit Forward- 
Current Transfer Ratio 
If - 1 MHzl 


M 


10 




0.5 




3 


- 


3 


- 


3 


- 


3 


" 




Thermal Resistance: 
Junction-to-Case 


R 0JC 










- 


3.125 


_ 


3.125 


_ 


3.125 


_ 


3.125 


"C/W 


Junction-to- Ambient 


r 0ja 










- 


62.5 


~ 


62.5 


" 


62.5 


- 


62.5 



"Pulsed: Pulse duration « 300 jis. duty factor • 2%. 



vices, voltage and c 



t values ara negative. 



Features: 

■ 40 W at 25°C case temperature 

■ 5-A rated collector current 

■ Min. f T of 3 MHz at 10 V, 500 mA 



TERMINAL DESIGNATIONS 



.ANGE)* 



Z.c 




92CS-275I9 

BOTTOM VIEW 
JEDEC TO-220 AB 



* 

I 

5 io 
% • 
5 • 

£ 2 
1 


P T IMA> 


.I-40W | 


1 










^ 


•°.a 












J/ 




k 










\ 


V^ 


Vv 












v\ 


\\NS 






E3 




L__ 


V 




f 




/ 




\ 


\\N 






k V 


V 


vY 


bS \.\ 



NUMBER OF THERMAL CYCLES 



Fig. i — Thermal-cycling ratings for all types. 



K400 
2 

8 200 

ft 

5 100 

* eo 

^ 60 

* 40 

5 
§ 20 

10 
e 

e 


COLLECTOR-TO-EMITTER VOLTAGE (VCE) 1 4V 








CASE TEMPERATURE (T C I>I25*C 




























,25*C 










































s 






















-40"C 








vs 






















— 


N 


> 


\ 


v\ 


























N 


^ 


S 


























s 


\ 





























































COLLECTOR CURRENT 1I C I— A 

92CS-20I48 

Fig. 2 — Typical dc beta characteristics for 
BD241 -series types. 



Jf400 

s 

a zoo 
6 

S 100 
£ eo 

J 20 

6 


COLLECTOR-TO-EMITTER VOLTAGE <VCE>'-4V 








CASE TEMPERATURE IT C I.|28'C 


























,25»C 




-• 






































>, 


N 




















-40 *C 






N> 






















•s 


> 


,N 


\ 
























N 


^ 


S 
























v 


\ 

























































COLLECTOR CURRENT (l c >— A 

tfCS-20H6l 

Fig. 3 — Typical dc beta characteristics tor 
BD242-series types. 



290 



POWER TRANSISTORS 



BD241, BD241A, BD241B, BD241C, BD242, BD242A, BD242B, BD242C 



i * 
g . 

so.. 

1 001 




ouslj 


















jji I c MAX. ICONTtM 


^^mi^iiumg <y • «»*c #w| 


frl 


™ P 






fa N 










P 


T 1 , 


'"^^^ffi 








^ 


$\ 


■SSJWkJ-^ -wren 4 












1 


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£ 




\\-f-f 


Jtltiil 


















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i 
























k« 








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'tm 


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ill! 


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i 


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.3 










- v ceo 


MAX. • 45 V (B024D G 




If 




















MAX. • 80V (B024IA) p 
MAX.* 80V 1B024IBI •• 
MAX.MOOV 18024IC) ^ 


















i 




















cto 


, 










: i" 




























































• 






:■ : ! : 


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-;::!-. 


-M 


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El 




* 




:ltl 


if 


tii 


'& 


-iL 




lilrffl 



COLLECTOA-TO-EMITTER VOLTAGE (Vfcel-V ^j.^s, 

F/p. 4 — Maximum safe operating areas tor 
B D 24 1 -series types. 



* 

6 * 
1 ' 

-001 


\ l£ MAX (O0MTH8J0US>|| 










HCASE TEWOUTWfffl 


















H 




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XSSMTION - UMITEO j 








~k 


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-T? 


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...-.::.■• 


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IT 








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: V C EO MAX.-4SV 18024 
























if 














' .: 


j V CE0 MAX-80V{8024 
VcEO MAX.- 100 V (802 


















f ty 








|!=I1 




us S 








; 












S3t- — 
















1 














Sift 








ii. 


: : ^ 


-illi: 


j? 


ffl 






i III! | = 








-SlLi 






=r 


= : 


:E : ^: 


-.- 


^ffi 


~r 


-'^Ja 

















COLLECTOK-TO-EMITTeil VOLTAOE (Voe)-V ttatt 

Fig. 5 - Maximum safe operating areas for 
BD242-series types. 



291 



POWER TRANSISTORS 



BD243, BD243A, BD243B BD243C, BD244, BD244A BD244B, BD244C 

Epitaxial-Base Silicon N-P-N and P-N-P 



VERSAWATT Transistors 

For Power-Amplifier and High-Speed-Switching Applications 

These RCA devices are epitaxial-base silicon n-p-n and 
p-n-p transistors; they differ only in their voltage ratings. 
These transistors are intended for a wide variety of switching 
and amplifier applications such as series and shunt regulators, 
and driver and output stages of high-fidelity amplifiers. The 
B0244 -series p-n-p power transistors are complements of 
the n-p-n devices in the BD243 series. 



MAXIMUM RATINGS. Absolute-Maximum Values: 

COLLECTOR TO EMITTER VOLTAGE: 

With external base to-emitter 

resistance (Rd,e> = 100 SI V CER 

With base open v CEO 

EMITTER TO BASE VOLTAGE V EB0 

CONTINUOUS COLLECTOR CURRENT l c 
CONTINUOUS BASE CURRENT l B 

TRANSISTOR DISSIPATION: P T 

At case temperatures up to 25°C .... 

At ambient temperatures up to 25°C . 

At case temperatures above 25°C .... 
TEMPERATURE RANGE: 

Storage & Operating (Junction) 

LEAD TEMPERATURE (During Soldering): 

At distance 1/8 in. (3.17 mm) from 

case for 10 s max. 

♦ For p-n.p davicea, voltage and currant value* ara nagativa. 



B0243 
8D244* 



All these transistors are supplied in the JEDEC TO-220AB 
straight-lead version of the VERSAWATT package. Optional 
lead configurations are available upon request. For infor- 
mation, contact your nearest RCA International Sales 
Office. 



B0243A 
BD244A* 



BD243B 
BD244B* 



Derate linearly to 150 C 
65 to 150 



BD243C 
BD244C* 



115 
100 



°C 



Features: 

■ 66 W at 26°C case temperature 

■ 7-A rated collector current 

■ Min. f T of 3 MHz at 10 V. 500 mA 

TERMINAL DESIGNATIONS 




92CS-275I9 

BOTTOM VIEW 
JEDEC TO-220 AB 



5J 

* 

5 10 
5 6 




= 65* X 




i\ 


"I " 








l/^ 










-J 








h. 


















. vS* 














\% 
















\\ \ 








I 










\\ iv&' 








3]\ \ 

xf K» v. 


\ 




& \ 









NUMBER OF THERMAL CYCLES 



Fig. 1 — Thermal-cycling ratings for all types. 



ELECTRICAL CHARACTERISTICS «r Caw Temperature <T C )-2S°C 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS* 


LIMITS 


UNITS 


VOLTAGE 
Vdc 


CURRENT 
Adc 


BD243 
BD244* 


BD243A 
BD244A* 


BD243B 
BD244B* 


BD243C 
BD244C* 


V CE 


V BE 


'c 


■b 


MM. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


MIN. 


MAX. 


Collector Cutoff Current: 
With bate open 


'CEO 


30 
60 










" 


0.7 


- 


0.7 


- 


0.7 


" 


0.7 


mA 


With base-to-emitter 
junction short-circuited 


'CES 


46 
60 
SO 
100 














0.4 


- 


0.4 


- 


0.4 


- 


0.4 


Emitter Cutoff Current 


'ebo 




-5 







- 


1 


- 


1 


- 


1 


- 


1 


mA 


Collector-to-Emitter 
Breakdown Voltage: 
. With bate open 


V BR(CEO). 






0.03 8 





45 


" 


60 


" 


80 


- 


100 


- 


V 


DC Forward-Current 
Transfer Ratio 


h FE 


4 
4 




0.3» 
3« 




30 
15 


" 


30 
15 


" 


30 
15 


: 


30 

15 


- 




Base-to-E miner Voltage 


V BE 


4 




6» 




- 


2 


- 


2 


- 


2 


- 


2 


V 


Collector-to-Emitter 
Saturation Voltage 


v CE i„t> 






6* 


1 


- 


1.5 




1.5 


- 


1.5 


- 


15 


V 


Common-Emitter 
Small-Signal Short- 
Circuit Forward- 
Current Transfer Ratio 
(f • 1 kHz) 


"f. 


10 




0.5 




20 


■ - 


20 


" 


20 


" 


20 


" 




Magnitude of Common 
Emitter Small-Signal 
Short-Circuit Forward- 
Current Transfer Ratio 
If • 1 MHzl 


N 


10 




OS 




3 


- 


3 


- 


3 


" 


3 


" 




Thermal Resistance: 
Junction-to-Case 


R ejc 










_ 


1.92 


_ 


1.92 


_ 


1.92 


_ 


1.92 


°C/W 


Junction-to-Ambient 


"fljA 










" 


62.5 


" 


62.5 


" 


62.5 


" 


62.5 



jfUoo 
s 

3 200 

< 100 
J B0 
>- 60 
* 40 

| 20 

o 10 

a b 


COLLECTOR-TO-EMITTER VOLTAGE (V CE ) « 4 V 








CASE TEMPERATURE (Tri-IZS'C 




























25'C 
































































-40'C 





























































































































































COLLECTOR CURRENT (I c l — A 

Fig. 2 — Typical dc beta characteristics 
BD243-series types. 



for 



j£4O0 

2 

3 200 

J 100 
« 80 
K 60 

f 20 

s 

o 10 

S 8 

6 


COLLECTOR-TO-EMITTER VOLTAGE (VCEI--4V 








CASE TEMPERATURE (Trl-l2S*C 




















































































-40 "C 





































































































































COLLECTOR CURRENT II C I— A 



'Pulsed: Pulie duration • 300 «!. duty factor ■ 2%. 



• For p-n-p davicaa. voltaga and currant valuas ara r 



Fig. 3 — Typical dc beta characteristics 
BD244-series types. 



for 



292 



POWER TRANSISTORS 



BD243, BD243A, BD243B, BD243C, BD244, BD244A, BD244B, BD244C 



10 t 


1 I c MAX. (CONTINUOUS^ 




|;|.'-f 


£? 


-3E 


Tp]if 


i\"* 


TEMPCIIATUItE - 




tm 




r 








te 
































' 




1! 


■On 












■r' 


I 1 ! 


;!!: 




















HO 




lit 


M 


llr 








S " 








- DissiMTioN-uytTe 














F — 












•1! 


! i 


1 ' m!'1B r 


11 


U 




















HI 


Sir 


■n JjUi 


w 


TttT 

1L. 




















"TTTT 




LMUTC 


0— 

jj; 


pc! 














































§ 












-jilil'l 




i : H! : 








;i : : 




















1] pi 












— 








.... . 


t < 








































1 














g 












:; = 




a: 




l:i: 










, 


















1? 










: = 
























































V CE0 MAX • 8OVIB02438 
























m 


















... 






















































::: :::: 




t: 














01 


i T 




-1 








;::' 


:: : = 




r 












.r .:'. 



COLLECTOH-TO-EMITTER VOLTAGE (V^e)- 



-10 t 

S * 

§ 

l-o, 


j % MAX. ICONTIMJOUSIk 








3 CASE TEMfttATUftC W 
















: — p 




» 
















;;:i|;l 




























■^MJIjl' 




DISSIMTION- 


JMtTEol 
















' i. ! K. !H ' 1 111 








% 


















ic 




?ffln 




!!■$ 


-j 


- 




:" 


•fr 








































































































£ |,' 








I 




















lh 












1 


































bl 




x 
















































































t" 








i 






















1 




t , 


















































































V CC0 H*«..4SV(B0244. £ 
























IAX -60VIB0244AlL 


























! VcEO***"* »0V (•02446,1- 






















— ■*"• 














































II 








v 


r 
















-O.Ql 












II 




- 


: : 




*7 If 


i: 




J 1 






■II 



Fig. 4 — Maximum safe operating areas for 
BD243-series types. 



COLLECTOR-TO-EMITTER VOLTAGE (VctJ-V MC9 . M « 

Fig. 5 — Maximum safe operating areas for 
BD244-series types. 



293 



POWER TRANSISTORS 



BD277 

7-A, 70-W, Epitaxial-Base, Silicon P-N-P 
VERSAWATT Transistor 



For Applications in Series and Shunt Regulators 

Type BD277 is an epitaxial-base silicon p-n-p transistor 
supplied in the JEDEC TO-220AB straight-lead VERSAWATT 
package. It is also available in the TO-220AA package (leads 
formed to fit a TO-66 socket); to order this version, specify 
formed lead No. 6201. 



The BD277 is useful in series regulators and shunt regu- 
lators because of its low saturation voltage and high power- 
dissipation capability. It is also useful as a replacement for 
germanium p-n-p transistors in many applications. 



MAXIMUM RATINGS, Absolute-Maximum Values: 

COLLECTOR-TO-BASE VOLTAGE: 

With emitter open VCBO 

COLLECTOR-TO-EMITTER VOLTAGE: 

With base open VcEO 

EMITTER-TO-BASE VOLTAGE: 

With collector open Vebo 

COLLECTOR CURRENT (Continuous) I c 

BASE CURRENT (Continuous) I B 

TRANSISTOR DISSIPATION: Py 

At case temperatures up to 25°C 

At case temperatures above 25°C 

TEMPERATURE RANGE: 

Storage & Operating (Junction) 

LEAD TEMPERATURE (During Soldering): 

At distance > 1/8 in. (3.17 mm) from case for 10 s max. . . . 



-45 
-45 



70 



Derate linearly at 0.56 W/°C 

-65 to 150 
235 



Features: 

■ Thermal-cycling ratings 

■ Maximum -safe-area-of-operation curve 

■ Low saturation voltage 

■ VERSAWATT package (molded silicone plastic) 

■ High power-dissipation capability 



TERMINAL DESIGNATIONS 




BOTTOM VIEW «cs-27 S i9 

TO-220AB 



A 










W 


(FLANGEK 


-u- ""' 1 

o| 

-" 1 




°C 
°C 


BOTTOM VIEW 


»2CS- 

TO-220AA 


27520 





ELECTRICAL CHARACTERISTICS, At Case Temperature <Tc> - 25°C unless specified otherwise 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 






UNITS 


VOLTAGE 
V dc 


CURRENT 
A dc 


LIMITS 


VCE 


Vcb 


V EB 


ic 


■B 


•e 


MIN. 


MAX. 


Collector Cutoff Current: 
With emitter open 


ICBO 




-45 













-0.1 


mA 


With emitter open and Tq = 150°C 




-40 











- 


-2.0 


With base open 


'CEO 


-30 













_ 


-1.0 


Emitter Cutoff Current: 
With collector open 


lEBO 






-4 











-1.0 


mA 


Collector-to-Emitter Breakdown Voltage: 
With base open 


v (BR)CEO 








-0.1* 







-45 


- 


V 


Base-to-Emitter Voltage 


VBE 


-2 






-1.75* 






_ 


1.2 


V 


DC Forward-Current 
Transfer Ratio 


"FE 


-2 






-1.75* 






30 


150 




Collector-to-Emitter 
Saturation Voltage 


VcE(sat) 








-1.75* 


-0.1 






-0.5 


V 


Gain-Bandwidth Product 


'T 


-4 






-0.5 






10 


_ 


MHz 


Thermal Resistance: 
Junction- to-Case 


R0JC 
















1.78 


°c/w 


Junction-to-Ambient 


RflJA 














- 


70 



100, 

* 4 

I 

ijj 10- 

5 • 

1 * 
1 








i — 


























oA 
















tf\\ 




& 










1 


M ^ 


^ 




&-I 










\ 


v. 


S S& 








XI 




* 


A v 


v\\" 








si 






V 


Av^fe 






|JL 






\ 


^ 


**% 






IP Y> 






A\\ 





NUMBER OF THERMAL CYCLES 



Fig. 1 - Thermal-cycling ratings. 



Pulsed: Pulse duration - 300 us, duty factor < 2%. 




-e 

T 

£-4 

j -z 

i 


COLLECTOR-TO-EMITTER VOLTAGE (V CE )--4 V i I I" " 












+i' i I 1 1 1 1 1 1 1 1 1 1 1 - 




ii l M U 1 1 1 1 1 1 1 1 1 1 1 






^/■ffi/tT-l | | I | | | | l | 








|/ | | I | | | j | | | | | I 




IHttHfc 






II gi 



















COLLECTOR-TO-EMITTER VOLTAGE (V c£ )-V 

Fig. 2 — Maximum operating area. 



BASE-TO-EMITTER VOLTAGE (V. E > — V 



Fig. 3 — Typical transfer characteristics. 



jf400 

e 

S 200 

5 ioo 
« ao 

►. 60 

I" 

s '! 

G 


COLLECTOR-TO-EMITTER VOLTAGE 1V CE »- -4 V 








I I III I 

CASE TEMPERATURE <T r )-l25"C 
























25 "C 




















































_i -«o-c 







































































































































COLLECTOR CURRENT (I c l— A 92CS-ieo< 

Fig. 4 — Typical dc beta characteristics. 



294 



POWER TRANSISTORS 

BD278, BD278A 



High-Current, Silicon N-P-N VERSAWATT 
Transistors 



For Medium-Power Linear and Switching Service 

in Consumer, Automotive, and Industrial Applications 



The RCA BD278 and BD278A are home- 
taxial-base silicon n-p-n transistors sup- 
plied in the JEDEC TO-220AB straight- 
lead VERSAWATT package. They are also 
available in the TO-220AA package (leads 
formed to fit a TO-66 socket); to order 
this version, specify formed lead No. 6201. 



These transistors are intended for a wide 
variety of medium-power switching and 
linear applications such as series regula- 
tors, solenoid drivers, motor-speed con- 
trols, inverters, output stages for high- 
fidelity amplifiers, and power supply and 
vertical-deflection circuits for mono- 
chrome and color TV. 



MAXIMUM RATINGS, Absolute-Maximum Values: 

COLLECTOR-TO-BASE VOLTAGE V CB0 

COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: 

With external base-to-emitter resistance (Rgg) = 100^2 .... V CER' SUS ' 

With base open V CE q(sus) 

EMITTER-TO-BASE VOLTAGE V FB0 

COLLECTOR CURRENT (Continuous) I c 

BASE CURRENT I B 

TRANSISTOR DISSIPATION: Pj 

At case temperature; up to 25°C 

At ambient temperatures up to 25°C 

At case temperatures above 25°C, derate linearly 

At ambient temperatures above 25°C, derate linearly 

TEMPERATURE RANGE: 

Storage & Operating (Junction) 

LEAD TEMPERATURE (During Soldering): 

Atdistance> 1/8 in. (3.17 mm) from case for 10 s max. . . . 



BD278 

55 

55 
45 

5 

10 

4 

75 

1.8 

0.6 

0.0144 



BD278A 

70 

70 
60 

5 
10 

4 

75 

1.8 

0.6 

0.0144 



V 
A 
A 

W 

W 

W/°C 

W/°C 




s 

i 
I 80 

I *° 
■ *> 

i 2c 


COLLECTOR-TC-EMITTER VOLTAGE (V(; E |.4 V 








































































































































\i 


»'C 


































^^ 


^ 


























1 


i* 
































+ 


*$ 


*fif 


i>" 




















<£ 


1«- 




ffl 










































































































> 
































tH 






















C 










• "in 



92CS-I79S3RI 



Fig. 1 — Thermal-cycling ratings. 



COLLECTOR CURRENT d c >— A 



Fig. 2 — Typical dc beta characteristics. 



Features: 

■ Low saturation voltage: 

V CE (sat) = 1 V max. at l c = 4 A 

■ VERSAWATT package (molded- 
silicon plastic) 

■ Maximum-safe-area-of-operation curve 

■ Thermal-cycling rating curve 

TERMINAL DESIGNATIONS 



BOTTOM VIEW 




JEDEC TO-220AB 



uA 



Ol 






BOTTOM VIEW MCS-2TS20 

JEOEC TO-Z20AA 




COLLECTOR-TO- EMITTER VOLTA8E <V CE )— V 



MCS-27799 

Fig. 3 — Maximum safe operating area. 



10 

T 
S • 

i 

§ • 
i 

u 4 
2 


COLLECTOR-TO-EMITTER VOLTAGE 


MceI-«v 










_-: 


jnf 


5H: 


HH 


£H 
















:::: 




=i 
































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M 
















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s 
















W 


=ii 














H:! 




:ij! 


Sr 


CASE TEMPERATURE lT c )-28'Cff||||j||||||| 


ffi 











BASE-TO-EMITTER VOLTASE (Vj£)-V 

ttCS-ll 

Fig. 4 — Typical transfer characteristics. 



2- * 
E 

E " 
i 

| , 

§ 0.4 

O 


COLL 
CASE 


CTOR- 

TEMP 


T0- 


EN 
Til 


»TTER W 
RE<T C I 


>LTA0 
■ZS'C 


. 1 


c 


(•4V 

















































































































































































COLLECTOR CURRENT 11(1 — A 



Fig. 5 — Typical gain bandwidth product. 




19 2 

BASE-TO-EMITTER VOLTAGE IV M )-V 

Fig. 6 — Typical input characteristics. 



295 



POWER TRANSISTORS 



BD278,BD278A 

ELECTRICAL CHARACTERISTICS, at Case Temperature (T c ) = 25°C unless otherwise specified 



CHARACTERISTIC 


SYMBOL 


TEST CONDITIONS 


LIMITS 


UNITS 


VOLTAGE 
V dc 


CURRENT 
A dc 


BD278 


BD278A 


V C E 


Veb 


'c 


>B 


MIN. 


MAX. 


MIN. 


MAX. 


Collector Cutoff Current: 

With base-to-emitter junction 
reverse-biased 


JCEX 


55 
70 


1.5 
1.5 






- 


2 


- 


2 


mA 
mA 


With base-to-emitter junction reverse- 
biased and Tc=150°C 


50 
65 


1.5 
1.5 






- 


10 


- 


10 


With base open 


'ceo 


30 
45 










- 


2 


- 


2 


Emitter Cutoff Current 


'ebo 




5 






- 


5 


- 


5 


mA 


Col lector-to- Emitter Sustaining Voltage: 
With external base-to-emitter 
resistance (Rbe) = 100J2 a 


V CER (sus) 






0.2 




55 


- 


70 


- 


V 


With base open 3 


v CEO (sus) 






0.2 





45 


- 


60 


- 


DC Forward-Current Transfer Ratio 3 


"FE 


4 




4 




15 


75 


15 


75 




Base-to-Emitter Voltage 3 


V B E 


4 




4 




- 


1.8 


- 


1.8 


V 


Collector-to-Emitter Saturation 
Voltage 3 


V CE (sat) 






4 


0.4 


- 


1 


- 


1 


V 


Common-Emitter Small-Signal 
Short-Circuit Forward-Current 
Transfer Ratio (f = 1 kHz) 


h fe 


4 




0.5 




15 


- 


15 


- 




Magnitude of Common-Emitter 
Small-Signal Short-Circuit 
Forward-Current Transfer Ratio 
(f = 0.1 MHz) 


n fe 


4 




0.5 




8 


28 


8 


28 




Forward-Bias Second-Breakdown 
Collector Current (t= 0.5 s) 


's/b 


40 








1.87 


- 


1.87 


- 


A 


Thermal Resistance: 
Junction-to-Case 


R 0JC 










- 


1.67 


- 


1.67 


°c/w 


Junction-to-Ambient 


R 0JA 










- 


70 


- 


70 



a Pulsed, pulse duration = 300ms, duty factor = 0.018 




20 JO 40 SO fO TO 

COLLECrOK-TD-CHITTER V0UMC IV^I— V 

MCI-I9M! 



Fig. 7 — Typical output characteristics. 




MK-10-HnTOIva.TME(V K >-¥ nm 

Fig. 8 — Reverse-bias second-breakdown 
characteristics. 



296 



POWER TRANSISTORS 



BD450, BD451 



Silicon Transistors for 70-Watt Quasi-Complementary- Symmetry 
Audio Amplifiers with Hometaxial-Base Output Transistors 



The RCA-BD450 and BD451 are n-p-n 
hometaxial-base silicon transistors 
particularly suitable for output stages 
of audio amplifiers. The BD451 is in- 
tended for 70-W amplifiers with 8-ohm 
loads and will also deliver 38 W with 
16-ohm loads. The BD450 is intended 
for 70-W amplifiers with 4-ohm loads. 
The 70-W amplifier shown in Figs. 2 
and 5 uses two BD451 in conjunction 



with seven TO-39 case transistors, 
eleven diodes, and an 84-volt split 
power supply. The amplifier output is 
directly coupled to an 8-ohm speaker. 
This amplifier is especially suitable 
for instrumentation applications 
where ruggedness is essential. 
The BD450 and BD451 are supplied in 
the JEDEC TO-204MA (formerly TO-3) 
hermetic steel case. 



MAXIMUM RATINGS, Absolute-Maximum Values: 



BD450 



VcBO 8° 

VcEO 50 

VCEFKRBE = 100Q) 80 

VEBO 

IC 

IB 

AtTc<25*C 

AtTc>25°C 



BD461 
96 
60 
95 



7 
15 
7 



V 
V 
V 
V 
V 
A 

W 



Tstg.Tj 

T|_: 
At distance > 1/32 in. (0.8 mm) 
from seating plane for 10 s max. 



_ 1f5 _ 
See Fig. 1 _ 
-65to200 _ *C 



230 



TYPICAL PERFORMANCE DATA 
For 70-Watt Audio Amplifier 

Measured at a line voltage of 220 V, 7> = 25*C, and a frequency of 1kHz, unless otherwise specified. 

IM Distortion: 
10 dB betow continuous power output 
at 60 Hz and 7 kHz (4:1) .0.1% 



Power: 
Rated power (8-fi load, at rated 

distortion) 70W 

Typical power (4-fi load) 70W 

Typical power (16-Q load) 38 W 

Music power (8-fi load, at 5% THD 

with regulated supply) 100 W 

Dynamic power (8-fi load, at 1 % THD with 

regulated supply) 88 W 

Total Harmonic Distortion: 
Rated distortion 1.0% 



Sensitivity: 
At continuous power-output 

rating 700mV 

Hum and Noise: 
Below continuous power output 

Input shorted 85 dB 

Input open 80 dB 

Input Resistance 20kQ 



TERMINAL DESIGNATIONS 




JEDEC TO-204MA 



NOTE: CURRENT 0ERATINS AT CONSTANT VOLTME 
APPLIES OWtY TO THE DISSIPATIONM-MCTED PORTION 
AND Ij/t-LMTED PORTION OF NAXIMUM-OPERATINS- 




CASE TEMPERATURE (Tc)-t 

Fig. 1 - Derating curve. 



■With 60-volt split power supply and 2-BD450 substitutedfor 2-BD451. 



BOOTSTRAP 
CURftCNT 
SOURCE 



INPUT 

DIFFERENTIAL 

AMPLIFIER 

p-»-p (Z) 

4040* 



OVERLOAD 

PROTECTION 

CIRCUIT 

(l)*-p-R RCAIAM 

(Dp-R-p RCAIAI9 



CLASS A 
PREDRIVER 

»-»-R 

40412 



CLASS B 
DRIVER 
•-P-R 
409*4 



OUTPUT 
A-p-n 
B049I 



l"*»l 



- (FEEDBACK") — I 



CLASS B 
DRIVER 
P-R-P 

40SM 



-4- 



OUTPUT 

R-p-R 

B04SI 



• 
• 
i • 

i 4 


'>< x 


— 

tux.- 


-+ 
























































K> 












i 

5 

i ■■ 

n 


\ \ 






^N 












V 




h ^s*H 




^ 












\& 


2 


1 8 





NUMBER OF THERMAL CYCLES 



Fig. 2 • Block diagram and transistor complement for 70 watt quasi-complementary-symmetry 
audio amplifier with hometaxial-base output transistors. 



Fig. 3 - Thermal-cycling ratings. 



297 



POWER TRANSISTORS 



BD450, BD451 



ELECTRICAL CHARACTERISTICS, A t Case Temperature (Tp) = 25'C 



CHARAC- 
TERISTIC 


TEST CONDITIONS 


LIMITS 


UNITS 


BD450* 


BD451A 


Mln. 


Max. 


Mln. 


Max. 


>CER 


VCE = 70V, RBE = 100Q 
VCE = 85V, RBE = 100Q 


. _ 


0.5 


_ 


0.5 


mA 


>EBO 


V£B = 4V, Iq = 


— 


1 


— 


1 


mA 


VCER 


IC = 0.2A, RbE = 100Q 


80 


— 


95 


— 


V 


fT 


IC = 1 A, VQE = 4V 


0.8 


— 


0.8 


— 


MHz 


hFE 


IC = 4A, VCE = 4V 
IC = 6A,VCE = 4V 


20 


70 


20 


70 




VcE(sat) 


IC = 4A, lB = 0.4A 
IC = 6A,lB = 0.6A 


— 


1 


— 


1 


V 


VBE 


IC = 4A, VCE = 4V 
IC = 6A, VCE = 4 V 





1.4 


_ 


1.4 


V 


■S/b 


VCE = 50V, t = 1s 
VCE = 60V, t = 1 s 


2.3 


— 


1.95 


— 


A 



*For characteristics curves and test conditions, refer to published data for prototype 2N305S 
(Hometaxlal), File 1077. 




MCM-S04S4 



NOTE8: 

1. D1-D11 — D1201A. 

2. Resistors are Vfc-watt, ± 10%, unless other- 
wise specified; values are in ohms. 

3. Non-inductive resistors. 

4. Capacitances are in pF unless otherwise 
specified. 

5. Mount each device on TO-39 heat sink. 

6. Provide heat sink of approx. 1.2 "CM per 
output device, with contact thermal resis- 
tance of 0.5*C/W max. and Ta = 45 *C max. 



£7^]|(-^2. 9 v, 




i * 



-i — i- 



( CURVES MUST BE DERATED LINEARLY NORMALIZED 

WITH INCREASE IN TEMPERATURE I 1. P0WER+- 

MULTIPLER- 

'• L ! 

PULSE OPERATION »f> 




COLLECTOR-TO-EMITTER VOLTAGE IV CE I— V 



Fig. 4 - Maximum operating areas. 



-r-r- "v— - r-f 

f-UHt / / 


-V +-f- 


•A, -l-J- 


^ ^ p 


S . v - IM .A THD^ VRBOULATED 


i J. J>H-4^drtTl 1 n J, 



POWER OUTPUTIPoutI-W 



Fig. 6 - Typical Intermodulatlon and total har- 
monic distortion as a function of power 
output at 1 kHz for 70-W amplifier. 





I 








SO WAT 


TS 




/" 






\ 








\ 








> 



10 20 SO 100 200 SO0 IK 2K SKIOK2OXS0K IOOK 
PREOUENCV-H, mfmv 

Fig. 7 ■ Typical response as a function of fre- 
quency at 60-W output for the 70-W 
amplifier. 



-42VNA. +42VNX. 
•2CS-SOMI 



Fig. 5 ■ 70-watt amplifier circuit featuring quasi-complementary-symmetry output employing 
hometaxlal-base construction output transistors: (a) basic amplifier circuit, (b) power- 
supply circuit. 



298 



POWER TRANSISTORS 



Silicon Transistors for 
Audio Amplifiers 

The BD500-Series and BD501 -Series 
types are p-n-p and n-p-n epitaxial- 
base silicon transistors, respectively, 
especially suitable for audio-output 
applications. The 40-watt amplifier 
shown in Figs. 1 and 5 uses the 
BD500B and BD501B in conjunction 
with seven TO-39 transistors, ten 
diodes, and a 64-volt split power sup- 
ply. The amplifier output is directly 

MAXIMUM RATINGS, Absolute-Maximum Values: 

BD501 
BD500* 

VCBO 60 

VCEO 50 

VCER(RBE = 100Q) 55 

VEBO 

ic 

IB 

P T : 

At Tc < 25 °C 

AtTc>25°C 

Tstg. Tj 

TV- 

At distances > 1/32 in. (0.8 mm) 
from case for 10 s max 



BD500, BD501 Series 
40-Watt Full-Complementary- Symmetry 



coupled to an 8-ohm speaker. The 
BD500A and BD501A are intended for 
similar 40-watt audio amplifiers ex- 
cept for a 4-ohm speaker and a split 
46-volt power supply. The BD500 and 
BD501 are intended for 25-watt audio 
amplifiers of similar circuitry except 
for a 4-ohm speaker and a split 40-volt 
power supply. 



BD501A 
BD500A* 

70 
60 
65 

5 

10 

4 



BD501B 
BD500B' 

90 
80 
85 



75 _ 

See Figs. 2 and 4 
-65 to 150 



230 



N-P-N 
P-N-P 

V 

V 

V 

V 

A 

A 

W 



*For p-n-p devices, voltage and current values are negative. 

TYPICAL PERFORMANCE DATA 
For 40-Watt Audio Amplifier 

Measured at a line voltage of 220 V, T& = 25 °C, and a frequency of 1 kHz, unless otherwise specified. 



Power: 
Rated power (8-Q load, at rated 

distortion) 40W 

Typical power (4-Q load) 75 Wi 

Typical power (16-Q load) 22 W 

Total Harmonic Distortion: 

Rated distortion 1.0% 

Typical at20W 0.05% 

IM Distortion: 
10 dB below continuous power output at 
60 Hz and 7 kHz(4:1) 0.1 % 



IHF Power Bandwidth: 
3 dB below rated continuous power at 

rated distortion 80 kHz 

Sensitivity: 
At continuous power-output 

rating 600mV 

Hum and Noise: 
Below continuous power output: 

Input shorted 80dB 

Input open 75 dB 

Input Resistance 20 kQ 



TERMINAL DESIGNATIONS 




- r T 



MCS-2HH 



BOTTOM VIEW 
JEDEC TO-220AB 




CASE TEMPERATURE (T c >- 



Fig. 2 - Derating curve for all types. 



■Typical power(4Q load) with 46-volt split power supply and BD500A.BD501 A output 40W 

Typical power(4Q load) with 40-volt split power supply and BD500, BD501 output 25W 



BOOTSTRAP 
CURRENT 
SOURCE 



INPUT 

DIFFERENTIAL 

AMPLIFIER 

p-n~p<2> 

40406 



OVERLOAD 

PROTECTION 

CIRCUIT 

(I) n-p-n 2N2I02 

{ I) p-n-p 2N4036 



I »'» 8 l 



- ("FEEDBACK) i- 



CLASS B 
DRIVER 
p-n-p 
40634 



<• 



166, 

• 
« 

i l 

h 

o 
c • 

o 
ff * 

| » 

I 








L- 

: : : : _ fT 


— 1 1 — h ::::: 

MAX.I-TSW 
















S" - 






2 


tr W 


fe 






2_u\^ 


l 4 . 






***i 


tt 


m% 






-s 

-I 

1] 


m r 




I*' 




l\\ \ 




\ Vf 


\\ \ \ 




y|\V-/ r 


vr- % \ 


■ • 


2 4 i.i 



NUMBER OF THERMAL CYCLES 



Fig. 1 - Block diagram and transistor complement for 40-watt full-complementarysymmetry 
audio amplifier. 



Fig. 3 ■ Thermal-cycling ratings. 



.299 



POWER TRANSISTORS 



BD500, BD501 Series 



ELECTRICAL CHARACTERISTICS, At Case Temperature (T C ) -- 


= 25"C 


CHARAC- 
TERISTICS 


TEST CONDITIONS 


LIMITS* 


UNITS 


BD500* 
BD501 


BDS00A* 
BD501A 


BD500B* 
BD501B 


Min. 


Max. 


Min. 


Max. 


Min. 


Max. 


'CER 

Rbe = 

100 Q 


Vce = 45V 
Vce = 55V 
VCE = 75 V 


- 


1 


- 


1 


- 


1 


mA 


>EBO 


V£B = 5V 


— 


1 


— 


1 


— 


1 


mA 


VCEO 


IC = 0.1 A 


50 


— 


60 


— 


80 


— 


V 


VCER 


IC = 0.1 A;Rbe=100Q 


55 


- 


65 


— 


85 


— 


V 


fr 


IC = 0.5A;Vce = 4V 


5 


— 


5 


— 


5 


— 


MHz 


hFE 


IC = 5A; Vce = 4V 
IC = 3.5A;V C E = 4V 


15 


90 


15 


90 


20 


120 


- 


VcE(sat) 


IC = 5A;Ib = 0.5A 
IC = 3.5A;I B = 0.35A 


— 


1.2 


— 


1.2 


— 


1 


V 


VBE 


IC = 5A; Vqe = 4V 
IC = 3.5A; Vce = 4V 


— 


1.8 


— 


1.8 


— 


1.5 


V 


'S/b 


Vce = 20 V;t = 0.55 s 
Vqe = 25 V;t = 0.55 s 
Vqe = 30 V;t = 0.55 s 


3.75 

- 





3 


- 


« 


= 


A 



iST«T h «ni?Si? r 'S^fiT? s and test condm °ns, refer to published data for prototypes (File 678)- 
2N6487 (BD501, BD501A); 2N6488 (BD501B); 2N6490 (BD500, BD500A); 2N6491 (BD500B) 
For p-n-p devices, voltage and current values are negative. 




2 

"o • 

~ 4 

£ t 

K 

3 i 
1 • 

u * 

o 

0.1 

• 

• 

i 


1 j 




CASE 


TEMPERATURE (Tc)-25«C 

ES MUST BE DERATED LINEARL 

INCREASE IN TEMPERATURE) 




I C (MAX) 




WITH 




— CONTINUOU 














































1 1 






















DC OPERATION if 
DISSIPATION - LIMITEO 




























«f \V 




















































































% 




























^\\ 
















V CE0 (MAX.I ]" J 




| 
















• 60 V (BOSOOA, B09C 

-80 V (B0SOOB, BD9C 
























































4 • • 


t 4 


• 




t 4 • • 



10 IOO IOOO 

COLLECTOR-TO-EMITTER VOLTAGE (Vce) — v 

HCt-ION) 



Fig. 4 - Maximum operating areas for all types. 



1 1 

8 LOAD 




1 1 




















20 WATTS 












/' 


















\ 


























\ 
























\ 



10 20 SO KM 200 SOO IK 2K SK KM 20K 50K IOOK 
FREquCNCT— Hi 



Fig. 6 ■ Typical frequency response. 



1. 

m 

t ' 

•o. 


1 1 

P-40W 
























































































/ 




-ni 






















1 


COS, 
















__ 




-y 


' 





PREOUCNCY— Hi 

»»CJ-JI»7 



Fig. 7 '• Typical total harmonic distortion as a 
function of frequency. 



NOTES (for Fig. 5): 

1. D1-D10— D1201A. 

2. Resistors are Vi-watt, ± 10%, unless other- 
wise specified; values are in ohms. 

3. Non-inductive resistors. 

4. Capacitances are in |iF unless otherwise 
specified. 

5. 55 'C thermal cutout attached to heat sink 
of output devices. 

6. TO-39 case devices with heat radiator at- 
tached. 

7. Provide heat sink of approx. 1.2°C/W per 
output device with a contact thermal resis- 
tance of 1.3'C/W max. and T/\ = 40 °C max. 

Fig. 5 - 40watt amplifier circuit featuring fullcomplementarysymmetry output using load line 
limiting: (a) basic amplifier circuit, (b) power-supply circuit. 




(b) 



300. 



.POWER TRANSISTORS 



BD550 Series 



Silicon Transistors for 70-, 120-, 200-, and 300-W Quasi- 
Complementary-Symmetry Audio Amplifiers 



The RCA-BD550, BD550A, and BD550B are 
silicon n-p-n transistors especially suitable 
for applications in audio-amplifier circuits, 
in which they may be used as either driver 
or output unit. 

These devices, together with a variety of 
other transistors that serve as input devices, 
Vbe amplifiers for biasing, current sources, 
load-line limiters (for overload protection), 
and predrivers, may be used to develop 



several hundred watts of audio output power 
in quasi-complementary-symmetry audio am- 
plifier configurations that employ parallel 
output transistors. Circuit examples, a recom- 
mended complement of transistors, and per- 
formance data are shown for 70-, 120-, 200-, 
and 300-W amplifiers.